US20020050040A1 - Method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device and method for producing an edge reflection type surface acoustic wave device - Google Patents

Method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device and method for producing an edge reflection type surface acoustic wave device Download PDF

Info

Publication number
US20020050040A1
US20020050040A1 US09/940,988 US94098801A US2002050040A1 US 20020050040 A1 US20020050040 A1 US 20020050040A1 US 94098801 A US94098801 A US 94098801A US 2002050040 A1 US2002050040 A1 US 2002050040A1
Authority
US
United States
Prior art keywords
type surface
reflection type
acoustic wave
surface acoustic
edge reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/940,988
Other languages
English (en)
Inventor
Michio Kadota
Yasunori Takakuwa
Seigo Hayashi
Junya Ago
Hideya Horiuchi
Mamoru Ikeura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Assigned to MURATA MANUFACTURING CO., LTD. reassignment MURATA MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAYASHI, SEIGO, TAKAKUWA, YASUNORI, AGO, JUNYA, HORIUHI, HIDEYA, IKEURA, MAMORU, KADOTA, MICHIO
Publication of US20020050040A1 publication Critical patent/US20020050040A1/en
Priority to US10/844,940 priority Critical patent/US7194793B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02669—Edge reflection structures, i.e. resonating structures without metallic reflectors, e.g. Bleustein-Gulyaev-Shimizu [BGS], shear horizontal [SH], shear transverse [ST], Love waves devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6436—Coupled resonator filters having one acoustic track only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/644—Coupled resonator filters having two acoustic tracks
    • H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
    • H03H9/6459—Coupled resonator filters having two acoustic tracks being electrically coupled via one connecting electrode
    • H03H9/6463—Coupled resonator filters having two acoustic tracks being electrically coupled via one connecting electrode the tracks being electrically cascaded
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544—Transducers of particular shape or position
    • H03H9/14552—Transducers of particular shape or position comprising split fingers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49009—Dynamoelectric machine
    • Y10T29/49011—Commutator or slip ring assembly
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/4908—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Definitions

  • the present invention relates to a method for producing an edge reflection type surface wave device for use in a band pass filter, a trap or other suitable device, and a method for adjusting a resonance frequency of an edge reflection type surface wave device.
  • an interdigital transducer is disposed on a piezoelectric substrate having two opposing edges.
  • a plurality of electrode fingers in the interdigital transducer are extended in the direction parallel to the edges.
  • An excited surface acoustic wave is reflected between the two opposing edges, a standing wave occurs, and the resonance characteristic based on the standing wave is utilized.
  • edge reflection type surface wave device requires no reflector, it allows for miniaturization of a surface wave device.
  • edge reflection type surface wave device For the production of the above-described edge reflection type surface wave device, a wafer made of a piezoelectric material is prepared. Then, a plurality of interdigital transducers are formed on the wafer. Next, the wafer is cut, two opposing edges thereof are formed, and a plurality of edge reflection type surface wave devices is cut out from the single wafer.
  • edge reflection type surface wave device In the edge reflection type surface wave device, unless the two opposing edges are correctly formed, desired resonance characteristic and filter characteristic cannot be achieved. Therefore, when forming edges using a single electrode type interdigital transducer, each of the edges has been previously cut out at the position spaced apart by ⁇ /2 or an integral multiple of ⁇ /2, outward in the propagation direction of a surface acoustic wave, from the center of the electrode finger adjacent to each of the outermost electrode fingers.
  • each of the edges has been cut out at the position spaced apart by an integral multiple of ⁇ /2, in the propagation direction of a surface acoustic wave, outward from the center between the pair of electrode finger portions of the electrode finger adjacent to each of the electrode fingers which are disposed on the outermost sides of the interdigital transducer in the propagation direction of a surface acoustic wave.
  • a plurality of edge reflection type surface wave devices is cut out from a wafer. Also, when mass-producing edge reflection type surface wave devices, interdigital transducers have been formed on each of a plurality of wafers in the same manner, and the plurality of wafers have been cut from above.
  • preferred embodiments of the present invention provide a method for manufacturing an edge reflection type surface wave device so as to eliminate variations in the frequency characteristics among the edge reflection type surface wave devices produced, and allowing a desired frequency characteristic to be realized.
  • the method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of determining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate.
  • the edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween.
  • the piezoelectric substrate is cut at at least one of a pair of positions which define a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the determined frequency characteristic, and is cut at at least one of a pair of positions which define a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the determined frequency characteristic.
  • the positions at which the piezoelectric substrate is cut in the piezoelectric substrate cutting step is preferably shifted from positions of the edges which define the predetermined distance in the frequency characteristic determining step by about ⁇ /8 or less and more preferably by about ⁇ /16, where the ⁇ is wavelength of a shear horizontal type surface wave to be excited in the edge reflection type surface acoustic wave device.
  • the edge reflection type surface acoustic wave device may include a single electrode type interdigital transducer.
  • the positions of the edges which define the predetermined distance are preferably located at approximate centers of electrodes.
  • the edge reflection type surface acoustic wave device may include a double electrode type interdigital transducer.
  • each of the positions of the edges which defines the predetermined distance is located at an approximate center of a pair of electrode fingers constituting a double electrode.
  • the method for producing an edge reflection type surface acoustic wave device which includes at least one interdigital transducer and utilizes a shear horizontal type surface wave, includes the steps of forming a plurality of interdigital transducers on a piezoelectric substrate, cutting the piezoelectric substrate and producing a reference edge reflection type surface acoustic wave device including at least one of the interdigital transducers and a pair of edges of the piezoelectric substrate, the pair of edges defining a predetermined distance therebetween, measuring a frequency characteristic of the reference edge reflection type surface acoustic wave, determining positions of a pair of edges defining each of remaining edge reflection type surface acoustic wave devices based on the measured frequency characteristic, and cutting the piezoelectric substrate at the determined positions to produce the remaining edge reflection type surface acoustic wave devices.
  • a distance between the pair of edges of the remaining edge reflection type surface acoustic wave devices is preferably made shorter than the predetermined distance when a final frequency characteristic of the remaining edge reflection type surface acoustic wave devices is to be higher than the measured frequency characteristic, and a distance between the pair of edges of the remaining edge reflection type surface acoustic wave devices is preferably made longer than the predetermined distance when a final frequency characteristic of the remaining edge reflection type surface acoustic wave devices is to be lower than the measured frequency characteristic.
  • FIG. 1 is a perspective view showing an edge reflection type surface wave device in accordance with a first preferred embodiment of the present invention
  • FIG. 2 is a diagram showing the relationship between the amount that the edge formed by cutting is shifted from the designed position, and the ratio of the deviation amount ⁇ f of the measured resonant frequency from the target resonant frequency f with respect to the target resonant frequency f, in the first preferred embodiment;
  • FIG. 3 is a diagram showing frequency characteristics when the positions of the edge are the designed position of ⁇ /4, the designed position of ⁇ /8, and the designed position of ⁇ /16, in the first preferred embodiment;
  • FIG. 4 is a schematic plan view showing the electrode configuration of an edge reflection type surface wave device in accordance with a second preferred embodiment of the present invention.
  • FIG. 5 is a partially enlarged plan view explaining the cutting position at which an edge is formed, in the edge reflection type surface wave device in accordance with a second preferred embodiment shown in FIG. 4;
  • FIG. 6 is a diagram showing the relationship between the position of the edge formed by cutting, and the ratio of the deviation amount ⁇ f of the measured center frequency from the target center frequency f 0 with respect to the target center frequency f 0 , in the second preferred embodiment of the present invention
  • FIG. 7 is a diagram showing frequency characteristics when the positions of the edge are the designed position of ⁇ /4, the designed position of ⁇ /8, and the designed position of ⁇ /16, in the second preferred embodiment of the present invention.
  • FIG. 8 is a perspective view showing a transversally coupled type surface wave filter including single electrode type interdigital transducers, as an example of surface acoustic wave device to which preferred embodiments of the present invention are applied;
  • FIG. 9 is a schematic plan view showing a transversally coupled type surface wave filter including double electrode type interdigital transducers, as an example of surface wave device to which preferred embodiments of the present invention are applied;
  • FIG. 10 is a diagram showing variations in the frequency characteristics in the transversally coupled type resonator filter including single electrode type interdigital transducers when the position of the edge is varied;
  • FIG. 11 is a perspective view showing a longitudinally-coupled type surface acoustic wave filter including single electrode type interdigital transducers, as another example of surface wave device to which preferred embodiments of the present invention are applied;
  • FIG. 12 is a schematic plan view showing the electrode configuration of a longitudinally-coupled type surface acoustic wave filter including double electrode type interdigital transducers, as still another example of a surface wave device to which preferred embodiments of the present invention are applied;
  • FIG. 13 is a plan view showing a ladder type filter including single electrode type interdigital transducers, as another example of an end surface reflection type surface wave device to which preferred embodiments of the present invention are applied;
  • FIG. 14 is a plan view showing a ladder type filter including double electrode type interdigital transducers, as still another example of an end surface reflection type surface wave device to which preferred embodiments of the present invention are applied.
  • FIG. 1 is a perspective view showing an example of edge reflection type surface wave device in accordance with a first preferred embodiment of the present invention.
  • the edge reflection type surface wave device 1 in accordance with this preferred embodiment is preferably an edge reflection type surface wave device utilizing a BGS wave as an SH type surface wave.
  • the edge reflection type surface wave device 1 has a piezoelectric substrate 2 having a substantially rectangular plate shape.
  • the piezoelectric substrate 2 is preferably made of a piezoelectric single crystal such as LiNbO 3 , LiTaO 3 , or a piezoelectric ceramic such as a lead titanate zirconate-based ceramic (PZT).
  • PZT lead titanate zirconate-based ceramic
  • An interdigital transducer 3 is disposed on the top surface of the piezoelectric substrate 2 .
  • the interdigital transducer 3 has a pair of comb-shaped electrodes 4 and 5 which are preferably made of a suitable metallic material such as Al.
  • the comb-shaped electrodes 4 and 5 have a plurality of electrode fingers 4 a and 4 b , and 5 a to 5 c , respectively.
  • the width of each of the electrode fingers sa and 5 c which are located on the outermost sides in the propagation direction of a surface wave is preferably about ⁇ /8.
  • ⁇ denotes a wavelength of an excited surface wave.
  • each of the remaining electrode fingers 4 a , 4 b , and 5 b is preferably about ⁇ /4.
  • the gap between electrode fingers is preferably about ⁇ /4.
  • a distance between the end surface 2 a and 2 b is preferably about ⁇ /2 ⁇ N, where ⁇ is a wavelength of a surface acoustic wave to be excited by the interdigital transducer 3 and N is an integer greater than one so that the excited wave becomes a standing wave between the end surfaces 2 a and 2 b.
  • a wafer for forming the piezoelectric substrate 2 is prepared. Specifically, a large-sized wafer constructed of the above-described piezoelectric single crystal or piezoelectric ceramic is prepared, and a plurality of interdigital transducers 3 is disposed on the wafer in order to configure a plurality of edge reflection type surface wave devices 1 .
  • the end surfaces 2 a and 2 b are formed by cutting the wafer in the thickness, and thus the edge reflection type surface wave device 1 is cut out.
  • the distance between the end surfaces 2 a and 2 b is set at a designed value so that the edge reflection type surface wave device 1 has a designed characteristics including a resonance frequency.
  • the piezoelectric characteristics vary from wafer to wafer, and consequently, when numerous edge reflection type surface wave devices 1 are obtained from a plurality of wafers, the resonance characteristics vary among these edge reflection type surface wave devices.
  • a pair of edges 2 a and 2 b are formed by cutting out from a wafer at the designed positions, thereby the two opposing edges of a single edge reflection type surface wave device are formed, and the frequency characteristic, especially a resonance frequency of the edge reflection type surface wave device 1 with the edges formed, are measured.
  • other edge reflection type surface wave devices to be cut out from the remaining portion of the wafer are presumed to have the same measured frequency characteristics by cutting out from a wafer at the designed positions.
  • the cutting positions of the two opposing edges are changed so as to correct the deviation, and then two opposing edges of each of the edge reflection type surface wave devices configured at the remaining portion of the wafer, are formed by cutting.
  • an adjustment of the frequency is performed by adjusting the forming position of the edges, i.e., a distance between the edges.
  • the actual position of the edges 2 a and 2 b are determined to be identical to the designed position of the edges 2 a and 2 b that give a distance of about ⁇ /2 ⁇ N.
  • the actual positions of the edges 2 a and 2 b are set at the inside or outside of the designed position in the propagation direction of a surface acoustic wave so that the distance between the actual the edges 2 a and 2 b may be either longer than or shorter than the designed position of the edges 2 a and 2 b that give a distance of about ⁇ /2 ⁇ N, thereby a resonance frequency is adjusted.
  • each of the positions of 2 a and 2 b has been conventionally set at position spaced apart by ⁇ /2, outward in the propagation direction of a surface acoustic wave, from the center of each of the electrode fingers 4 a and 4 b adjacent to the outermost electrode fingers 5 a and 5 c .
  • each of the two opposing edges is formed by performing cutting at a position on the inside or outside of the designed position, which is the position spaced apart by about ⁇ /2 from the center of each of the electrode fingers 4 a and 4 b , outward in the propagation direction of a surface acoustic wave.
  • FIG. 2 shows the variation in the resonant frequency of the edge reflection type surface wave device 1 when the edge 2 b is formed at positions shifted outwardly from the designed position, which is spaced apart by about ⁇ /2 from the center of the electrode finger 4 b , in an edge reflection type surface wave device 1 having fifteen pairs of electrodes and eighty pairs of electrode, respectively.
  • the results shown in FIG. 2 are obtained from the experiments wherein fifteen pairs and eighty pairs of electrode fingers are disposed on a piezoelectric substrate made of PZT, in the edge reflection type surface wave device 1 , and wherein ⁇ is about 58 ⁇ m.
  • the term “pair” referred to one electrode finger belonging to the comb-shaped electrode 4 and one electrode finger belonging to the comb-shaped electrode 5 which are adjacent with each other.
  • the “0” on the horizontal axis represents the designed position, which is spaced apart by ⁇ /2 from the center of the electrode finger 4 b , outward in the propagation direction of a surface acoustic wave.
  • the edge position on the horizontal axis refers to an edge forming position when the designed position is set at the origin (that is, 0).
  • the “+” direction from the designed position 0 means that an edge is formed outside the designed position in the propagation direction of a surface acoustic wave.
  • FIG. 2 indicates the results when both the edge 2 a and the edge 2 b are formed with the same shift amount and in the same direction. It is preferable that both the edge 2 a and the edge 2 b are formed with the same shift amount and in the same direction so that the edge reflection type surface wave device is symmetric with respect to a center line that is substantially parallel to electrode fingers of the interdigital lines. However, it is possible to shift a resonance frequency only by shifting either the edge 2 a or the edge 2 b from the respective designed position.
  • the resonant frequency deviates by shifting the forming position of each of the edges 2 a and 2 b from the designed position.
  • the frequency is adjusted so that the resonant frequency becomes lower when each of the edges is formed by cutting the piezoelectric substrate outside the designed position so that the distance between the edges 2 a and 2 b becomes larger than the designed value of approximately ⁇ /2 ⁇ N, and that the frequency is adjusted so that the resonant frequency becomes higher when each of the edges is positioned inside the designed position in the propagation direction of a surface wave so that the distance between the edges 2 a and 2 b becomes smaller than the designed value of approximately ⁇ /2 ⁇ N.
  • the resonant frequency can be adjusted by performing cutting at a position shifted from the designed position outward or inward along the propagation direction of a surface wave.
  • a calibration which indicates the frequency shift with respect to positional shift from the designed position of the edges such as FIG. 2 is first obtained through an experiment. Then, a reference edge reflection type surface wave device having a pair of edges 2 a and 2 b formed by cutting out from a wafer at the designed positions and a resonance frequency of the reference edge reflection type surface wave device is measured.
  • each of the edges 2 a and 2 b are shifted too much from the designed position outward or inward, not only the impedance ratio of the resonance characteristic decreases, but also unwanted spurious response occurs in the frequency characteristic.
  • the characteristic indicated by the arrow P 1 in FIG. 3 shows the frequency characteristic when each of the edges 2 a and 2 b is formed at the position shifted from the designed position by about ⁇ /4 inward along the propagation direction of a surface acoustic wave.
  • a significant spurious response indicated by the arrow X in the figure occurs in the frequency characteristic.
  • the resonant frequency is different from the above-described case, but the level of the spurious response is equal thereto.
  • the arrow P 2 in FIG. 3 indicates the frequency characteristic when the forming position of each of the edges is within the range of the designed positions of about ⁇ /8, for example, at the designed position of about ⁇ /8. It can be seen that the spurious response marked by “X” in P 1 shown in FIG. 3 has been significantly reduced.
  • each of the edges 2 a and 2 b is formed within the range of the designed position of about ⁇ /16.
  • the arrow P 3 in FIG. 3 indicates the frequency characteristic when each of the edges 2 a and 2 b is formed at the position of the designed positions of about ⁇ /16.
  • the edge reflection type surface wave device 1 shown in FIG. 1 is an application example of a surface wave resonator including a single electrode type interdigital transducer 3 .
  • the present invention can also be applied to a method for manufacturing a surface wave device which includes a double electrode type interdigital transducer having a pair of electrode finger portions.
  • FIG. 4 is a schematic plan view showing the electrode configuration of an edge reflection type surface wave device 11 having a double electrode type interdigital transducer 12 in accordance with a second preferred embodiment of the present invention.
  • the interdigital transducer 12 has a plurality of electrode fingers.
  • Each of the electrode fingers has a double electrode (or split electrode) configuration wherein a pair of electrode finger portions are provided.
  • the electrode fingers 13 and 14 of the interdigital transducer 12 in FIG. 4 are configured so that electrode finger portions 13 a and 13 b , and 14 a and 14 b define pairs, respectively.
  • the position spaced apart by about ⁇ /2, outward in the propagation direction of a surface acoustic wave, from the center of the electrode 13 , i.e., the center of the electrode finger portions 13 a and 13 b adjacent to the outermost electrode finger 14 in the propagation direction of a surface acoustic wave, is set to be a designed position, and an edge is formed by performing cutting at a position within the range of about + ⁇ /8 from the designed position.
  • FIG. 5 is an enlarged partial cutaway plan view showing the portion where an edge is to be formed outside the electrode fingers 13 and 14 of the interdigital transducer 12 shown in FIG. 4, in the propagation direction of a surface acoustic wave.
  • the interdigital transducer 12 is configured so that the electrode finger 13 thereof has a pair of electrode finger portions 13 a and 13 b and that the outermost electrode finger 14 thereof has a pair of electrode finger portions 14 a and 14 b .
  • the position (position C) spaced apart by about ⁇ /2, outward in the propagation direction of a surface acoustic wave, from the center of the electrode 13 , i.e., the center of the electrode finger portions 13 a and 13 b in the propagation direction of a surface acoustic wave, is set at a designed position, and an edge is formed by performing cutting at a position on the inside or outside of the designed position.
  • cutting is performed at one of positions indicated by A to F, there is a possibility that the electrode finger portion 14 b in the outermost electrode finger 14 is cut off.
  • FIG. 6 shows the variation in the resonant frequency when each of the edges is formed in the manner described above, and the position thereof is shifted from the designed position which gives a distance of about ⁇ /2 ⁇ N in the edge reflection type surface wave device 1 .
  • the results shown in FIG. 6 are obtained from the experiments wherein an interdigital transducer 12 having fifteen, thirty-four and eighty pairs of electrode fingers are disposed on a piezoelectric substrate constituted of PZT, respectively, and wherein ⁇ is about 36 ⁇ m.
  • the horizontal axis represents the position of the end surface.
  • the “0” on the horizontal axis means that the edge is positioned at the designed position (position C), which is spaced apart by about ⁇ /2 from the center of the electrode finger portions 13 a and 13 b , outward in the propagation direction of a surface acoustic wave.
  • the resonant frequencies vary in the same manner as the first preferred embodiment by shifting the position of each of the edges.
  • the characteristic indicated by the arrow Q 1 in FIG. 7 show the frequency characteristic when each of the edges is formed at the position shifted from the designed position by about ⁇ /4 along the propagation direction of a surface wave. As indicated by the arrow Y in the figure, a significant spurious response is observed.
  • the characteristic indicated by the arrow Q 2 in FIG. 7 shows the frequency characteristic when each of the edges is located at the position that is shifted from the designed position by about ⁇ /8. It can been seen that the above-described spurious response has been considerably suppressed.
  • the characteristic indicated by the arrow Q 3 in FIG. 7 shows the frequency characteristic when each of the edges is located at the position that is shifted from the designed positions by about ⁇ /16. It is recognized that the above-described spurious response is suppressed more effectively when the position of each of the edges is within the range of about ⁇ /16 from the designed position.
  • FIGS. 8 and 14 shows other examples of surface wave devices to which preferred embodiments of the present invention is applied.
  • Edge reflection type surface wave devices 21 and 31 illustrated in FIGS. 8 and 9 are transversally coupled type edge reflection type surface wave filters which have two single electrode type interdigital transducers 22 and 23 , and two double electrode type interdigital transducers 32 and 33 , respectively.
  • FIG. 10 illustrates characteristic examples of transversally coupled type resonator filter using a piezoelectric substrate preferably made of PZT, shown in FIG. 9.
  • C indicates a characteristic when each of the edges is formed at the designed position
  • D, E, F, and G indicate characteristics when each of the edges is formed at the positions shifted outside the designed position by about ⁇ /32, ⁇ /16, ⁇ /8, and ⁇ /4, respectively.
  • the center frequency can be adjusted by varying the edge forming position.
  • the insertion loss is very inferior and the spurious response are very large when each of the edges is formed at the position shifted outside the designed position by about ⁇ /4.
  • FIG. 10 shows the results of the case where the edge forming position is shifted outside the designed position, the shifting of the edge forming position inside the designed position allows the center frequency to be adjusted to shift toward a higher frequency. In this case, the insertion loss and the spurious response exhibits the same values as the case where the edge forming position is shifted outside the designed position.
  • a longitudinally-coupled type resonator filter which will be described below also shows similar results.
  • a surface wave device 41 shown in FIG. 11 is a longitudinally-coupled type surface acoustic wave filter wherein single electrode type interdigital transducers 43 and 44 are disposed on a piezoelectric substrate 42 along the propagation direction of a surface wave.
  • An edge reflection type surface wave device 51 shown in FIG. 12 is a longitudinally-coupled type surface acoustic wave filter having double electrode type interdigital transducers 52 and 53 .
  • Edge reflection type surface wave devices 61 and 71 shown in FIGS. 13 and 14 are ladder type filters having single electrode type interdigital transducers and double electrode type interdigital transducers, respectively.
  • the method for manufacturing an edge reflection type surface wave device in accordance with preferred embodiments of the present invention can generally be applied to the production of various edge reflection type surface wave devices besides the different edge reflection type surface wave devices shown in FIGS. 8 to 14 as described above.
  • an edge reflection type surface wave device which has an intended frequency characteristic can be easily achieved by measuring the characteristic of the edge reflection type surface wave device which has firstly been formed on the identical wafer, and by adjusting the edge forming position in the remaining edge reflection type surface wave devices on the identical wafer depending on the deviation of the obtained characteristic from the target characteristic.
  • each of the two opposing edges is formed by cutting the piezoelectric at a position within the range of about + ⁇ /8 from the designed position, and thereby the frequency is adjusted to become lower.
  • each of the two opposing edges is formed by cutting the piezoelectric at a position inside the designed position, for example, within the range of about ⁇ /8 from the designed position, and thereby the frequency is adjusted to become higher.
  • each of the edges is formed by performing cutting at a position within the range of the designed position of about + ⁇ /16, or the designed position of about ⁇ /16, the unwanted spurious response is even more suppressed, thereby achieving a superior resonant characteristic or filter characteristic.
  • the position that is spaced apart by about ⁇ /2, outward in the propagation direction of a surface acoustic wave, from the center of the electrode finger adjacent to each of the outermost electrode fingers is set to be a designed position, and each of the two opposing edges is formed by performing cutting at a position within the range of the designed position of about + ⁇ /8 or the designed position of about ⁇ /8.
  • the unwanted spurious response therefore, can be effectively suppressed, thereby achieving superior resonant characteristic or filter characteristic.
  • the resonant frequency or the center frequency can be easily adjusted to become lower or higher by adjusting the position of each of the edges.
  • each of the edges is preferably formed by performing cutting within the range of the designed position of about + ⁇ /16, or the designed position of about ⁇ /16, the unwanted spurious response can be more effectively suppressed.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
US09/940,988 2000-09-06 2001-08-28 Method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device and method for producing an edge reflection type surface acoustic wave device Abandoned US20020050040A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/844,940 US7194793B2 (en) 2000-09-06 2004-05-13 Method for producing an edge reflection type surface acoustic wave device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000270586 2000-09-06
JP2000-270586 2000-09-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/844,940 Division US7194793B2 (en) 2000-09-06 2004-05-13 Method for producing an edge reflection type surface acoustic wave device

Publications (1)

Publication Number Publication Date
US20020050040A1 true US20020050040A1 (en) 2002-05-02

Family

ID=18757002

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/940,988 Abandoned US20020050040A1 (en) 2000-09-06 2001-08-28 Method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device and method for producing an edge reflection type surface acoustic wave device
US10/844,940 Expired - Lifetime US7194793B2 (en) 2000-09-06 2004-05-13 Method for producing an edge reflection type surface acoustic wave device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/844,940 Expired - Lifetime US7194793B2 (en) 2000-09-06 2004-05-13 Method for producing an edge reflection type surface acoustic wave device

Country Status (5)

Country Link
US (2) US20020050040A1 (de)
JP (1) JP3797155B2 (de)
KR (2) KR100635763B1 (de)
CN (2) CN100388624C (de)
DE (1) DE10143730B4 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105568309B (zh) * 2015-12-11 2017-08-25 苏州大学 一种光电化学电池的光电极的制备方法
KR102636251B1 (ko) * 2016-02-24 2024-02-14 (주)와이솔 횡모드 억제를 위한 표면 탄성파 디바이스
US10756697B2 (en) 2018-06-15 2020-08-25 Resonant Inc. Transversely-excited film bulk acoustic resonator
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US11936358B2 (en) 2020-11-11 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11323096B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11323089B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11323090B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications
US10601392B2 (en) 2018-06-15 2020-03-24 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator
US11206009B2 (en) 2019-08-28 2021-12-21 Resonant Inc. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11509279B2 (en) 2020-07-18 2022-11-22 Resonant Inc. Acoustic resonators and filters with reduced temperature coefficient of frequency
US10790802B2 (en) 2018-06-15 2020-09-29 Resonant Inc. Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate
US20220116015A1 (en) 2018-06-15 2022-04-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11146232B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US10911023B2 (en) 2018-06-15 2021-02-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with etch-stop layer
US10637438B2 (en) 2018-06-15 2020-04-28 Resonant Inc. Transversely-excited film bulk acoustic resonators for high power applications
US11996827B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11967945B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd. Transversly-excited film bulk acoustic resonators and filters
US10868513B2 (en) 2018-06-15 2020-12-15 Resonant Inc. Transversely-excited film bulk acoustic filters with symmetric layout
US11171629B2 (en) 2018-06-15 2021-11-09 Resonant Inc. Transversely-excited film bulk acoustic resonator using pre-formed cavities
US12009798B2 (en) 2018-06-15 2024-06-11 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes
US11323095B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Rotation in XY plane to suppress spurious modes in XBAR devices
US11888463B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Multi-port filter using transversely-excited film bulk acoustic resonators
US11264966B2 (en) 2018-06-15 2022-03-01 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US10998877B2 (en) 2018-06-15 2021-05-04 Resonant Inc. Film bulk acoustic resonator fabrication method with frequency trimming based on electric measurements prior to cavity etch
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US11374549B2 (en) 2018-06-15 2022-06-28 Resonant Inc. Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers
US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US11323091B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US11349450B2 (en) 2018-06-15 2022-05-31 Resonant Inc. Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes
US11146238B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Film bulk acoustic resonator fabrication method
US10917072B2 (en) 2019-06-24 2021-02-09 Resonant Inc. Split ladder acoustic wave filters
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US11349452B2 (en) 2018-06-15 2022-05-31 Resonant Inc. Transversely-excited film bulk acoustic filters with symmetric layout
US11329628B2 (en) 2020-06-17 2022-05-10 Resonant Inc. Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators
US11728785B2 (en) 2018-06-15 2023-08-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator using pre-formed cavities
US10797675B2 (en) 2018-06-15 2020-10-06 Resonant Inc. Transversely excited film bulk acoustic resonator using rotated z-cut lithium niobate
US10998882B2 (en) 2018-06-15 2021-05-04 Resonant Inc. XBAR resonators with non-rectangular diaphragms
US11996822B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Wide bandwidth time division duplex transceiver
US10992283B2 (en) 2018-06-15 2021-04-27 Resonant Inc. High power transversely-excited film bulk acoustic resonators on rotated Z-cut lithium niobate
US11996825B2 (en) 2020-06-17 2024-05-28 Murata Manufacturing Co., Ltd. Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US10826462B2 (en) 2018-06-15 2020-11-03 Resonant Inc. Transversely-excited film bulk acoustic resonators with molybdenum conductors
US11201601B2 (en) 2018-06-15 2021-12-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US10819309B1 (en) 2019-04-05 2020-10-27 Resonant Inc. Transversely-excited film bulk acoustic resonator package and method
US12021496B2 (en) 2020-08-31 2024-06-25 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US10992284B2 (en) 2018-06-15 2021-04-27 Resonant Inc. Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
US11228296B2 (en) 2018-06-15 2022-01-18 Resonant Inc. Transversely-excited film bulk acoustic resonator with a cavity having a curved perimeter
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US10985728B2 (en) 2018-06-15 2021-04-20 Resonant Inc. Transversely-excited film bulk acoustic resonator and filter with a uniform-thickness dielectric overlayer
CN113169721B (zh) * 2018-10-31 2024-06-18 株式会社村田制作所 固态装配型横向激励的薄膜体声波谐振器
US11901873B2 (en) 2019-03-14 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with partial BRAGG reflectors
JP2022524136A (ja) 2019-03-14 2022-04-27 レゾナント インコーポレイテッド ハーフラムダ誘電体層を有する横方向に励起されたフィルムバルク音響共振器
US10911021B2 (en) 2019-06-27 2021-02-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with lateral etch stop
US10862454B1 (en) 2019-07-18 2020-12-08 Resonant Inc. Film bulk acoustic resonators in thin LN-LT layers
US11329625B2 (en) 2019-07-18 2022-05-10 Resonant Inc. Film bulk acoustic sensors using thin LN-LT layer
US20210273629A1 (en) 2020-02-28 2021-09-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer
CN113541634A (zh) 2020-04-20 2021-10-22 谐振公司 具有增强q因子的小横向激励的薄膜体声波谐振器
US11811391B2 (en) 2020-05-04 2023-11-07 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with etched conductor patterns
US11469733B2 (en) 2020-05-06 2022-10-11 Resonant Inc. Transversely-excited film bulk acoustic resonators with interdigital transducer configured to reduce diaphragm stress
US10992282B1 (en) 2020-06-18 2021-04-27 Resonant Inc. Transversely-excited film bulk acoustic resonators with electrodes having a second layer of variable width
US11742828B2 (en) 2020-06-30 2023-08-29 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with symmetric diaphragm
US11817845B2 (en) 2020-07-09 2023-11-14 Murata Manufacturing Co., Ltd. Method for making transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate
US11264969B1 (en) 2020-08-06 2022-03-01 Resonant Inc. Transversely-excited film bulk acoustic resonator comprising small cells
US11271539B1 (en) 2020-08-19 2022-03-08 Resonant Inc. Transversely-excited film bulk acoustic resonator with tether-supported diaphragm
US11671070B2 (en) 2020-08-19 2023-06-06 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators using multiple dielectric layer thicknesses to suppress spurious modes
US11894835B2 (en) 2020-09-21 2024-02-06 Murata Manufacturing Co., Ltd. Sandwiched XBAR for third harmonic operation
US11405017B2 (en) 2020-10-05 2022-08-02 Resonant Inc. Acoustic matrix filters and radios using acoustic matrix filters
US11658639B2 (en) 2020-10-05 2023-05-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband
US11405019B2 (en) 2020-10-05 2022-08-02 Resonant Inc. Transversely-excited film bulk acoustic resonator matrix filters
US11728784B2 (en) 2020-10-05 2023-08-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters
US11476834B2 (en) 2020-10-05 2022-10-18 Resonant Inc. Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors
US11929733B2 (en) 2020-10-05 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements
US11463066B2 (en) 2020-10-14 2022-10-04 Resonant Inc. Transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate
US12003226B2 (en) 2020-11-11 2024-06-04 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic resonator with low thermal impedance
US11496113B2 (en) 2020-11-13 2022-11-08 Resonant Inc. XBAR devices with excess piezoelectric material removed
US12028039B2 (en) 2020-11-13 2024-07-02 Murata Manufacturing Co., Ltd. Forming XBAR devices with excess piezoelectric material removed
US11405020B2 (en) 2020-11-26 2022-08-02 Resonant Inc. Transversely-excited film bulk acoustic resonators with structures to reduce acoustic energy leakage
US11239816B1 (en) 2021-01-15 2022-02-01 Resonant Inc. Decoupled transversely-excited film bulk acoustic resonators

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041809A (ja) 1983-08-17 1985-03-05 Fujitsu Ltd 弾性表面波共振子
JPS60211674A (ja) * 1984-04-05 1985-10-24 Matsushita Electric Ind Co Ltd Ｖｔｒ編集制御方法
JPH0614608B2 (ja) 1984-06-20 1994-02-23 富士通株式会社 弾性波素子
JPS6271317A (ja) 1985-09-24 1987-04-02 Nec Kansai Ltd 弾性表面波装置の製造方法
US5283037A (en) * 1988-09-29 1994-02-01 Hewlett-Packard Company Chemical sensor utilizing a surface transverse wave device
US5099459A (en) * 1990-04-05 1992-03-24 General Electric Company Phased array ultrosonic transducer including different sized phezoelectric segments
JP3239399B2 (ja) * 1991-11-15 2001-12-17 株式会社村田製作所 表面波装置
JPH05183376A (ja) * 1991-12-27 1993-07-23 Murata Mfg Co Ltd 表面波装置
JPH07307640A (ja) 1994-03-17 1995-11-21 Fujitsu Ltd 弾性表面波デバイス
JP3206285B2 (ja) * 1994-03-25 2001-09-10 株式会社村田製作所 端面反射型表面波共振子
JPH0846467A (ja) * 1994-07-27 1996-02-16 Oki Electric Ind Co Ltd 共振器型弾性表面波フィルタの周波数調整方法
JPH08204498A (ja) * 1995-01-24 1996-08-09 Murata Mfg Co Ltd 端面反射型表面波装置
JP3106912B2 (ja) 1995-06-30 2000-11-06 株式会社村田製作所 端面反射型表面波装置の製造方法
JPH0969751A (ja) 1995-08-30 1997-03-11 Murata Mfg Co Ltd 弾性表面波フィルタ
JP3106924B2 (ja) 1995-08-31 2000-11-06 株式会社村田製作所 表面波共振子
JP3514015B2 (ja) * 1995-12-28 2004-03-31 株式会社村田製作所 弾性表面波装置及びその製造方法
JP3233087B2 (ja) 1997-01-20 2001-11-26 株式会社村田製作所 弾性表面波フィルタ
JP3171144B2 (ja) 1997-07-07 2001-05-28 株式会社村田製作所 表面波装置
US5986523A (en) * 1997-08-29 1999-11-16 Murata Manufacturing Co., Ltd. Edge reflection type longitudinally coupled surface acoustic wave filter
JP3341709B2 (ja) 1998-06-01 2002-11-05 株式会社村田製作所 表面波装置及びそれを用いた通信装置
JP2000156620A (ja) * 1998-11-19 2000-06-06 Japan Radio Co Ltd 弾性表面波デバイスの中心周波数調整方法および弾性表面波デバイスの製造方法
JP2000165184A (ja) * 1998-11-20 2000-06-16 Fujitsu Ltd 弾性表面波素子
JP3341699B2 (ja) * 1999-02-18 2002-11-05 株式会社村田製作所 端面反射型表面波装置

Also Published As

Publication number Publication date
US7194793B2 (en) 2007-03-27
US20040261250A1 (en) 2004-12-30
CN100388624C (zh) 2008-05-14
KR20050078658A (ko) 2005-08-05
DE10143730A1 (de) 2002-07-25
JP2002158554A (ja) 2002-05-31
KR100658306B1 (ko) 2006-12-14
DE10143730B4 (de) 2009-01-08
KR20020020205A (ko) 2002-03-14
JP3797155B2 (ja) 2006-07-12
KR100635763B1 (ko) 2006-10-17
CN1166056C (zh) 2004-09-08
CN1545205A (zh) 2004-11-10
CN1343044A (zh) 2002-04-03

Similar Documents

Publication Publication Date Title
US7194793B2 (en) Method for producing an edge reflection type surface acoustic wave device
US11716069B2 (en) Slanted apodization for acoustic wave devices
US10938371B2 (en) Acoustic wave resonator, filter, and multiplexer
US6154105A (en) Surface acoustic wave device with specific electrode materials and quartz substrate euler angles
JP4017984B2 (ja) 音波で動作するトランスデューサ構造体
US20080018417A1 (en) Surface Acoustic Wave Resonator and Surface Acoustic Wave Filter Using the Same
KR100401421B1 (ko) 표면 탄성파 공진자, 표면 탄성파 장치 및 통신장치
US20020130736A1 (en) Edge-reflection surface acoustic wave filter
US6208224B1 (en) Surface acoustic wave filter with parallel arm resonators having different resonant frequencies
JP2002176333A (ja) 弾性表面波フィルタ
US20220224307A1 (en) Acoustic wave device and multiplexer
CN110868187A (zh) 一种基于弧形电极的超高频谐振器结构
US4742319A (en) Surface-acoustic-wave resonator
US7482895B2 (en) Surface acoustic wave filter
US5802685A (en) Method for manufacturing surface wave devices of the end-face reflection type
JP3204112B2 (ja) 弾性表面波共振子フィルタ
US6731044B1 (en) Surface acoustic wave device having an interdigital transducer provided on a main region of a piezoelectric substrate
JP2004007094A (ja) 弾性表面波装置
US20020053856A1 (en) Surface acoustic wave device and piezoelectric substrate used therefor
US6313563B1 (en) Edge reflection type surface acoustic wave device
EP1030445A2 (de) Kantenreflexions-Oberflächenwellenfilter
US6356167B1 (en) Surface acoustic wave resonator, surface acoustic wave filter, duplexer communications apparatus and surface acoustic wave apparatus, and production method of surface acoustic wave resonator
JP7431702B2 (ja) 弾性波デバイス、通信装置及び弾性波デバイスの製造方法
JP3435641B2 (ja) 端面反射型表面波フィルタ
JPH08298431A (ja) 弾性表面波フィルタ

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION