US10312144B2 - Method of dividing a wafer by back grinding - Google Patents

Method of dividing a wafer by back grinding Download PDF

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Publication number
US10312144B2
US10312144B2 US15/456,800 US201715456800A US10312144B2 US 10312144 B2 US10312144 B2 US 10312144B2 US 201715456800 A US201715456800 A US 201715456800A US 10312144 B2 US10312144 B2 US 10312144B2
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Prior art keywords
wafer
back side
dividing
dividing groove
forming step
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US20170271208A1 (en
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Hideki Koshimizu
Yurika Araya
Tetsukazu Sugiya
Takashi HAIMOTO
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing

Definitions

  • the present invention relates to a wafer processing method for dividing a wafer to obtain a plurality of device chips each having a die bonding resin film on the back side.
  • a wafer having a plurality of devices is divided into individual device chips, wherein the plural devices are formed on the front side of the wafer so as to be separated from each other by a plurality of division lines, thus obtaining the semiconductor device chips, which are next packaged to be used in electrical equipment such as mobile phones and personal computers.
  • Each semiconductor device chip is bonded to a lead frame (metal substrate) or the like.
  • a bonding agent for bonding each semiconductor device chip to the lead frame is provided on the back side of each semiconductor device chip in the following manner.
  • a die attach film (DAF as a film functioning both as a dicing tape and as a bonding agent) is attached to the back side of a wafer to be divided into the individual device chips, wherein the DAF has substantially the same size as that of the wafer.
  • the wafer is divided into the individual device chips by dicing from the front side of the wafer, and the DAF is also cut according to the individual device chips.
  • each device chip with the DAF attached to the back side is isolated from the wafer, thus obtaining each semiconductor device chip with the bonding agent provided on the back side (see Japanese Patent Laid-open No. 2000-182995, for example).
  • the bonding agent providing method mentioned above is performed on the following precondition. That is, the back side of the wafer is ground to reduce the thickness of the wafer to a predetermined thickness. Thereafter, the DAF is attached to the back side of the wafer. Thereafter, the wafer is divided into the individual device chips by dicing the front side of the wafer.
  • a bonding agent such as a die bonding resin on the back side of each device chip in the case of adopting the dicing-before-grinding method.
  • a bonding agent providing method a die bonding resin film is attached to the whole back side of a wafer after dividing the wafer into individual device chips and before isolating each device chip from the wafer. Thereafter, a laser beam is applied to the die bonding resin film from the front side of the wafer through each dividing groove, thereby dividing the die bonding resin film according to the device chips (see Japanese Patent Laid-open No. 2002-118081, for example).
  • etching may be adopted in place of a cutting blade (see Japanese Patent Laid-open No. 2006-294913, for example).
  • each division line of the wafer may be changed in width or position by a load applied from a grinder in performing the back grinding step, causing a loss of linearity. Accordingly, it may be difficult to linearly process each division line by using any physical processing means such as a cutting blade. Particularly, in the case that each device is small in size (e.g., 2 mm square or less), the number of devices to be divided from the wafer is large, so that the physical processing along each division line may become more difficult to cause a reduction in productivity.
  • a wafer processing method for dividing a wafer into individual device chips along a plurality of crossing division lines, the front side of the wafer being partitioned by the division lines to define a plurality of separate regions where a plurality of devices corresponding to the device chips are formed, the wafer processing method including a dividing groove forming step of forming a dividing groove along each division line formed on the front side of the wafer, the dividing groove having a depth corresponding to the finished thickness of each device chip; a dividing step of providing a protective member on the front side of the wafer after performing the dividing groove forming step, and next thinning the wafer to expose the dividing groove to the back side of the wafer, thereby dividing the wafer into the individual device chips; a die bonding resin film forming step of applying a liquid resin for die bonding to the back side of the wafer after performing the dividing step, and next solidifying the liquid resin applied to the back side of the wafer, thereby
  • the dividing groove forming step is performed by using a cutting blade to cut the wafer along each division line.
  • the dividing groove forming step may be performed by subjecting the wafer to wet etching or dry etching.
  • the dividing groove forming step may be performed by applying a laser beam to the wafer along each division line.
  • the dividing groove can be formed along each division line.
  • the dividing step is performed by grinding the back side of the wafer to thereby reduce the thickness of the wafer until the dividing groove is exposed to the back side of the wafer.
  • the isolating step includes a transfer step of attaching an adhesive tape to the back side of the wafer after performing the die bonding resin film forming step, supporting the wafer through the adhesive tape to an annular frame having an inside opening in such a manner that the wafer is set in the inside opening closed by the adhesive tape, and next removing the protective member from the front side of the wafer, a tape expanding step of expanding the adhesive tape after performing the transfer step, and a pickup step of picking up each device chip from the adhesive tape after performing the tape expanding step.
  • the thin film layer forming step includes a holding step of holding the wafer on a rotatable table in the condition where the back side of the wafer is exposed, and a coating step of rotating the rotatable table holding the wafer thereon and next spraying the liquid resin to the back side of the wafer.
  • the liquid resin to be sprayed in the thin film layer forming step includes an ultraviolet curing resin, and the external stimulus to be applied in the external stimulus applying step includes ultraviolet light.
  • the liquid resin to be sprayed in the thin film layer forming step includes a thermosetting resin, and the external stimulus to be applied in the external stimulus applying step includes heat.
  • the thin film layer to be formed once in the thin film layer forming step has a thickness of 3 to 7 ⁇ m, and the predetermined thickness of the die bonding resin film is 30 to 50 ⁇ m.
  • the liquid resin for die bonding can be applied to the back side of each device chip divided from the wafer, so that the die bonding resin film can be formed on the back side of each device chip. Accordingly, even in the case of obtaining the individual device chips by the dicing-before-grinding method, it is unnecessary to perform a step of dividing a DAF according to the device chips by applying a laser beam, for example. Accordingly, the productivity can be improved.
  • FIG. 1A is a perspective view showing an essential part of a cutting apparatus for performing a dividing groove forming step
  • FIG. 1B is a cross section taken along the line A-A in FIG. 1A ;
  • FIGS. 2A and 2B are perspective views showing a step of attaching a protective member to the front side of a wafer
  • FIGS. 3A and 3B are perspective views showing a dividing step of grinding the back side of the wafer to thereby divide the wafer into device chips;
  • FIG. 4A is a perspective view showing a step of applying a liquid resin for die bonding to the back side of the wafer;
  • FIG. 4B is a perspective view showing a step of applying ultraviolet light to the liquid resin applied to the back side of the wafer;
  • FIG. 5 is a perspective view showing a transfer step of supporting the wafer through an adhesive tape to an annular frame and then peeling the protective member;
  • FIG. 6 is a sectional view showing an isolating step of isolating each device chip from the wafer.
  • FIG. 1A shows a dividing groove forming step of forming a dividing groove along each division line formed on the front side of a semiconductor wafer W as a workpiece, wherein the dividing groove has a depth corresponding to the finished thickness of each device chip.
  • the dividing groove forming step is performed by using a cutting apparatus (a part of which being shown) having a spindle unit 10 .
  • the spindle unit 10 includes a spindle housing 11 and a spindle 12 rotatably mounted in the spindle housing 11 , wherein a front end portion of the spindle 12 projects from the spindle housing 11 and a cutting blade 13 is fixed to the front end portion of the spindle 12 .
  • the semiconductor wafer W has a predetermined thickness (e.g., 700 ⁇ m) in its initial condition.
  • the semiconductor wafer W has a front side 20 a and a back side 20 b .
  • a plurality of crossing division lines are formed on the front side 20 a of the semiconductor wafer W to thereby define a plurality of separate regions where a plurality of devices 21 are formed.
  • the semiconductor wafer W is held under suction on a holding table (not shown) included in the cutting apparatus in the condition where the back side 20 b of the semiconductor wafer W is in contact with the upper surface of the holding table.
  • the cutting blade 13 fixed to the spindle 12 is rotated at a high speed and then lowered to cut in the semiconductor wafer W.
  • the holding table and the cutting blade 13 are relatively moved in a feeding direction to thereby form a dividing groove 22 along each division line as shown in FIG.
  • FIG. 1B which is a cross section taken along the line A-A in FIG. 1A .
  • the dividing groove 22 along each division line has a depth corresponding to the finished thickness (e.g., 50 ⁇ m) of each device chip. Further, the dividing groove 22 has a predetermined width (e.g., 30 ⁇ m). In FIG. 1B , the dividing groove 22 is so shown as to be emphasized for convenience of illustration and not in accordance with an actual size.
  • the cutting blade 13 is movable in a feeding direction as a direction of cutting the semiconductor wafer W and also movable in an indexing direction perpendicular to the feeding direction in a horizontal plane.
  • the cutting blade 13 is further vertically movable with respect to the semiconductor wafer W.
  • the movement of the cutting blade 13 in each direction can be controlled in accordance with a program previously stored.
  • the dividing groove 22 is formed along each division line formed on the front side 20 a of the semiconductor wafer W by using the cutting blade 13 .
  • the dividing groove forming step using the cutting blade 13 is completed. Thereafter, the semiconductor wafer W is removed from the holding table of the cutting apparatus.
  • each dividing groove 22 is set to a value corresponding to the finished thickness of each device chip, it is not necessarily required to set the depth of each dividing groove 22 to a value exactly coinciding with the finished thickness of each device chip, but the depth of each dividing groove 22 may be set to a value such that when the back side 20 b of the semiconductor wafer W is ground to reduce the thickness of the wafer W to the predetermined finished thickness in the subsequent step, the semiconductor wafer W is divided into the individual device chips along each dividing groove 22 .
  • the depth of each dividing groove 22 may be set to a value slightly greater than the predetermined finished thickness.
  • a protective tape 23 as a protective member for protecting the devices 21 is attached to the front side 20 a of the semiconductor wafer W as shown in FIGS. 2A and 2B (protective member attaching step).
  • the protective member attaching step is followed by a dividing step of dividing the semiconductor wafer W into the individual device chips as described below.
  • the dividing step is performed by using a grinding apparatus (a part of which being shown) having a chuck table 30 .
  • the semiconductor wafer W with the protective tape 23 attached to the front side is held on the chuck table 30 in the condition where the protective tape 23 is in contact with the upper surface of the chuck table 30 .
  • the chuck table 30 is rotatable by a motor (not shown).
  • the chuck table 30 has an upper surface as a holding surface formed of porous ceramic having fine pores allowing passage of air.
  • the upper surface of the chuck table 30 is in communication with suction means (not shown). Accordingly, when the suction means is operated, the semiconductor wafer W placed on the upper surface of the chuck table 30 is held under suction.
  • the grinding apparatus further includes a spindle 31 adapted to be rotated by a servo motor (not shown).
  • the spindle 31 is provided above the chuck table 30 so that the axis of the spindle 31 is shifted from the center of the chuck table 30 .
  • a mounter 32 is formed at the lower end of the spindle 31 .
  • a grinding wheel 33 is firmly fixed to the mounter 32 by means of bolts.
  • the grinding wheel 33 has a plurality of abrasive members for grinding the semiconductor wafer W held on the chuck table 30 .
  • the spindle 31 , the mounter 32 , the grinding wheel 33 , and the servo motor constitute a grinding unit.
  • the grinding apparatus further includes feeding means (not shown) for moving the grinding unit in a vertical direction, or in a feeding direction.
  • the feeding means is operated to lower the grinding wheel 33 until the abrasive members come into contact with the semiconductor wafer W held on the chuck table 30 .
  • the chuck table 30 is rotated at 300 rpm, for example, and the grinding wheel 33 is rotated at 6000 rpm, for example.
  • the grinding wheel 33 is fed downward at a rate of 1 ⁇ m/second.
  • the thickness of the semiconductor wafer W is measured by a contact type or noncontact type thickness gauge (not shown).
  • a predetermined finished thickness e.g., 50 ⁇ m
  • the dividing grooves 22 formed in the dividing groove forming step are exposed to the back side 20 b of the semiconductor wafer W as shown in FIG.
  • the semiconductor wafer W is divided into the individual device chips.
  • the protective tape 23 as the protective member remains attached to the front side of each device chip.
  • a die bonding resin film forming step is performed by using a die bonding resin film forming apparatus as shown in FIGS. 4A and 4B , wherein a part of this resin film forming apparatus is shown.
  • the semiconductor wafer W divided into the individual device chips and attached to the protective tape 23 is held on a holding table 40 included in the resin film forming apparatus in the condition where the back side of the semiconductor wafer W is oriented upward, that is, the protective tape 23 is in contact with the upper surface of the holding table 40 .
  • the holding table 40 is connected to suction means (not shown) for effecting suction holding of the semiconductor wafer W on the upper surface of the holding table 40 .
  • the holding table 40 is rotatable by a servo motor (not shown).
  • the resin film forming apparatus includes a coating unit 50 provided in the vicinity of the holding table 40 .
  • a thin film layer forming step is performed by the coating unit 50 .
  • the coating unit 50 includes a coating nozzle 51 extending substantially horizontally and having a front end 51 a adapted to be positioned above the semiconductor wafer W held on the holding table 40 during the operation, a mixing unit 52 for mixing a liquid resin for die bonding and a high-pressure air and then supplying the resultant mixture to the coating nozzle 51 , a swinging unit 53 having an air motor (not shown) for swinging the coating nozzle 51 in the direction shown by an arrow R in FIG.
  • a high-pressure air tank 54 for supplying a high-pressure air to the mixing unit 52
  • a liquid resin tank 55 for supplying a liquid resin for die bonding to the mixing unit 52 .
  • the high-pressure air tank 54 is provided with an air pump and a relief valve (both not shown), so that the pressure in the tank 54 is always controlled to a constant pressure (e.g., 0.3 MPa) during the operation, and a high-pressure air can be supplied to the mixing unit 52 as required.
  • the liquid resin tank 55 contains a liquid resin for die bonding, which functions as a bonding agent. This resin is normally in a liquid state and it is solidified by applying an external stimulus.
  • the liquid resin tank 55 has a built-in pump for supplying the liquid resin under a constant pressure to the mixing unit 52 .
  • an ultraviolet curing resin curable by applying ultraviolet light as the external stimulus is used as the liquid resin.
  • the ultraviolet curing resin may be provided by “HP20VL” or “ST20VL” manufactured by Honghow Specialty Chemicals Inc.
  • a silver filled epoxy resin as a thermosetting resin curable by applying predetermined heat as the external stimulus, (by heating) may be used.
  • the silver filled epoxy resin may be provided by “Ablebond 8200C” manufactured by Ablestik Laboratories.
  • the mixing unit 52 has a restricted portion (not shown) through which the high-pressure air is passed.
  • This restricted portion is provided with a thin pipe for supplying the liquid resin in a direction perpendicular to the axial direction of the restricted portion.
  • a so-called venturi structure is provided in the mixing unit 52 .
  • the high-pressure air is supplied from the high-pressure air tank 54 to the mixing unit 52 , and the liquid resin is supplied from the liquid resin tank 55 to the mixing unit 52 .
  • the high-pressure air is passed through the restricted portion of the mixing unit 52 , the liquid resin is sucked from the thin pipe into the restricted portion by a venturi effect.
  • the liquid resin is atomized in the restricted portion and then sprayed from the front end 51 a of the coating nozzle 51 toward the back side of the semiconductor wafer W.
  • the structure of the mixing unit 52 is not limited in the present invention.
  • the configuration of an air brush or the like to be generally used as a coating tool may be applied.
  • the coating unit 50 is set in a standby condition. That is, the front end 51 a of the coating nozzle 51 is positioned above the outside of the semiconductor wafer W in the vicinity thereof.
  • the reason for this setting is to prevent that a large-diameter drop of the liquid resin may be applied on the semiconductor wafer W at starting the coating operation.
  • the holding table 40 starts to be rotated at 500 rpm, for example.
  • the high-pressure air starts to be supplied from the high-pressure air tank 54
  • the liquid resin next starts to be supplied from the liquid resin tank 55 .
  • the front end 51 a of the coating nozzle 51 is positioned above the outside of the semiconductor wafer W
  • the liquid resin starts to be sprayed from the front end 51 a of the coating nozzle 51
  • the swinging unit 53 next starts to be operated. That is, during the rotation of the semiconductor wafer W at the above speed, the coating nozzle 51 is driven by the swinging unit 53 so that the front end 51 a of the coating nozzle 51 is reciprocated above the semiconductor wafer W as shown by the arrow R by preset plural times (e.g., five times).
  • the front end 51 a of the coating nozzle 51 is returned to the initial position (standby condition) above the outside of the semiconductor wafer W. Thereafter, the supply of the liquid resin and the supply of the high-pressure air are stopped. Further, the rotation of the holding table 40 is also stopped to complete the thin film layer forming step. As described above, the front end 51 a of the coating nozzle 51 is reciprocated plural times, e.g., five times, to apply a small amount of liquid resin in each pass rather than apply a large amount of liquid resin at a time. As a result, a thin film layer having a thickness of 3 to 7 ⁇ m can be formed from the liquid resin on the back side of the semiconductor wafer W in the above thin film layer forming step.
  • an external stimulus applying step is performed by using ultraviolet light applying means 100 as shown in FIG. 4B . That is, the ultraviolet light applying means 100 functions as means for applying an external stimulus to the thin film layer. As shown in FIG. 4B , ultraviolet light is applied from the ultraviolet light applying means 100 to the thin film layer formed on the back side of the semiconductor wafer W. As a result, the thin film layer is solidified to obtain a die bonding resin film 60 on the back side of the semiconductor wafer W divided into the individual device chips as shown in FIG. 4B .
  • the set of the thin film layer forming step and the external stimulus applying step mentioned above is repeated two or more times. More specifically, as described above, the liquid resin for die bonding is sprayed to the back side of the semiconductor wafer W to form the thin film layer having a thickness of 3 to 7 ⁇ m. Thereafter, ultraviolet light is applied to the thin film layer, thereby solidifying the thin film layer. Thereafter, the thin film layer forming step and the external stimulus applying step are performed again. Thus, the set of the thin film layer forming step and the external stimulus applying step is repeated two or more times to obtain a die bonding resin film having a predetermined thickness (e.g., 30 to 50 ⁇ m). Thus, the die bonding resin film forming step is completed.
  • a predetermined thickness e.g. 30 to 50 ⁇ m
  • thermosetting resin as the liquid resin for die bonding in the thin film layer forming step
  • heat is applied from an electric heater or the like to the thin film layer in place of the ultraviolet light used above in performing the external stimulus applying step.
  • the thin film layer formed of the thermosetting resin is solidified by heating to thereby obtain a similar die bonding resin film 60 on the back side of the semiconductor wafer W divided into the individual device chips.
  • the liquid resin for die bonding is sprayed to the back side of the semiconductor wafer W previously divided into the individual device chips, and the thin film layer formed on the back side of the semiconductor wafer W is next solidified. Then, such a series of steps is repeated two or more times to obtain the die bonding resin film having a predetermined thickness.
  • the liquid resin is prevented from entering the dividing grooves 22 each having a width of 30 ⁇ m, for example, formed in the dividing groove forming step, each dividing groove 22 being present between any adjacent device chips. That is, the liquid resin remains only on the back side of each device chip.
  • a transfer step is performed as shown in FIG. 5 .
  • the liquid resin for die bonding is not present in each dividing groove 22 , so that the individual device chips are connected by only the protective tape 23 .
  • the semiconductor wafer W is removed from the holding table 40 of the resin film forming apparatus shown in FIGS. 4A and 4B . Thereafter, as shown in FIG.
  • the back side of the semiconductor wafer W on which the die bonding resin film 60 has been formed is attached to an expandable adhesive tape T supported at its peripheral portion to an annular frame F having an inside opening in such a manner that the semiconductor wafer W is set in the inside opening closed by the adhesive tape T.
  • the protective tape 23 is peeled from the front side of the semiconductor wafer W.
  • the transfer step of transferring the semiconductor wafer W from the protective tape 23 to the adhesive tape T is completed, so that the semiconductor wafer W with the die bonding resin film 60 formed on the back side is supported through the adhesive tape T to the annular frame F.
  • an isolating step is performed in such a manner that each device chip having the die bonding resin film 60 on the back side is isolated from the semiconductor wafer W.
  • This isolating step is performed by using an isolating apparatus 70 as shown in FIG. 6 , wherein a part of the isolating apparatus 70 is shown.
  • the isolating apparatus 70 includes a frame holding member 71 having an upper surface for mounting the annular frame F, a plurality of clamps 72 for clamping the annular frame F mounted on the upper surface of the frame holding member 71 , and a cylindrical expanding drum 73 provided inside the frame holding member 71 for expanding the adhesive tape T supported to the annular frame F.
  • the expanding drum 73 has an upper opening.
  • the frame holding member 71 is vertically movably supported by supporting means 723 .
  • the supporting means 723 is composed of a plurality of air cylinders 723 a arranged around the expanding drum 73 and a plurality of piston rods 723 b extending from the air cylinders 723 a .
  • Each piston rod 723 b is connected to the frame holding member 71 .
  • the expanding drum 73 has a diameter smaller than the inner diameter of the annular frame F and larger than the diameter of the semiconductor wafer W supported through the adhesive tape T to the annular frame F.
  • the frame holding member 71 is adapted to be vertically moved by the supporting means 723 between a reference position (shown by a phantom line in FIG. 6 ) where the upper surface of the frame holding member 71 is at substantially the same level as the upper end of the expanding drum 73 and an expansion position (shown by a solid line in FIG. 6 ) where the upper surface of the frame holding member 71 is lower in level than the upper end of the expanding drum 73 . That is, in the expansion position, the upper end of the expanding drum 73 is higher in level than the upper surface of the frame holding member 71 .
  • each device chip is held under suction by the pickup collet 74 and then peeled from the adhesive tape T.
  • Each device chip is next transferred to a tray (not shown) or any means for performing a die bonding step of bonding each device chip to a lead frame.
  • the isolating step is completed and the wafer processing method of the present invention is then completed.
  • the liquid resin sprayed to the back side of the semiconductor wafer W in the thin film layer forming step may slightly enter the dividing grooves 22 previously formed on the semiconductor wafer W.
  • the adhesive tape T in the isolating step the semiconductor wafer W with the die bonding resin film can be completely divided into the individual device chips. Accordingly, there is no need for any dedicated cutting means or the like for dividing the semiconductor wafer W with the die bonding resin film.
  • the cutting blade 13 fixed to the front end of the spindle 12 is rotated to cut the front side 20 a of the semiconductor wafer W, thereby forming the dividing groove 22 along each division line.
  • the method of forming the dividing groove 22 is not limited to the above method in the present invention, but various other methods may be adopted.
  • dry etching such as reactive ion etching using a gas formed into ions and radicals by a plasma may be adopted, or wet etching using various liquids to be selected according to the material of a wafer may also be adopted.
  • laser processing using a laser beam having an absorption wavelength to a wafer may also be adopted.
  • the liquid resin for die bonding is sprayed toward the back side of the semiconductor wafer W.
  • the pressure of the high-pressure air to be supplied from the high-pressure air tank 54 , the amount of the liquid resin to be supplied from the liquid resin tank 55 , or the mixing ratio between the high-pressure air and the liquid resin in the mixing unit 52 is preferably set so that the particle size of the atomized liquid resin becomes small and the amount of the atomized liquid resin to be sprayed per unit time becomes small.
  • the pressure of the high-pressure air having an effect on the particle size of the atomized liquid resin or the amount of the atomized liquid resin to be sprayed per unit time is preferably set so as to eliminate the possibility of entry of the liquid resin into the dividing grooves, in consideration of the width of each dividing groove and the viscosity of the liquid resin, for example.

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KR102408524B1 (ko) 2017-09-19 2022-06-14 삼성디스플레이 주식회사 표시 장치의 제조 장치 및 표시 장치의 제조 방법
CN109909623A (zh) * 2017-12-12 2019-06-21 中芯国际集成电路制造(北京)有限公司 用于晶圆的切割方法
JP7045843B2 (ja) * 2017-12-12 2022-04-01 株式会社ディスコ 被加工物の分割方法
US10685863B2 (en) * 2018-04-27 2020-06-16 Semiconductor Components Industries, Llc Wafer thinning systems and related methods
US11552040B2 (en) * 2020-07-21 2023-01-10 Western Digital Technologies, Inc. Package process, DAF replacement
TWI783395B (zh) * 2021-03-03 2022-11-11 華泰電子股份有限公司 晶圓薄化方法
CN114669452B (zh) * 2022-03-26 2023-06-06 宁波芯健半导体有限公司 一种超薄芯片背胶涂覆方法、涂覆装置及存储介质

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CN107204286A (zh) 2017-09-26
US20170271208A1 (en) 2017-09-21
TW201742130A (zh) 2017-12-01
DE102017105503B4 (de) 2024-01-18
TWI721106B (zh) 2021-03-11
DE102017105503A1 (de) 2017-09-21
CN107204286B (zh) 2021-11-19
KR20170108838A (ko) 2017-09-27

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