UA87672C2 - Агрегований кристалічний порошкоподібний кремній, спосіб його одержання і застосування - Google Patents

Агрегований кристалічний порошкоподібний кремній, спосіб його одержання і застосування

Info

Publication number
UA87672C2
UA87672C2 UAA200606737A UAA200606737A UA87672C2 UA 87672 C2 UA87672 C2 UA 87672C2 UA A200606737 A UAA200606737 A UA A200606737A UA A200606737 A UAA200606737 A UA A200606737A UA 87672 C2 UA87672 C2 UA 87672C2
Authority
UA
Ukraine
Prior art keywords
silane
hydrogen
crystalline silicon
silicon powder
doping material
Prior art date
Application number
UAA200606737A
Other languages
English (en)
Russian (ru)
Inventor
Маркус Прідьоль
Пауль Рот
Хартмут Віггерс
Франк-Мартін Петрат
Міхаель Кремер
Original Assignee
Дегусса Аг
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Дегусса Аг filed Critical Дегусса Аг
Publication of UA87672C2 publication Critical patent/UA87672C2/uk

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Запропонований агрегований кристалічний порошкоподібний кремній, який має площу поверхні БЕТ від 20 до 150 м2/г, який одержують за допомогою нагрівання принаймні одного пароподібного або газоподібного силану та необов'язково принаймні однієї пароподібної або газоподібної легуючої речовини, інертного газу та водню в реакторі з гарячими стінками, охолодження реакційної суміші або надання реакційній суміші можливості охолонути та відділення продукту реакції від газоподібних речовин у вигляді порошку, у якому частка силану знаходиться в діапазоні між 0,1 та 90 мас. % у перерахунку на сумарну кількість силану, легуючої речовини та інертних газів, і в якому частка водню в перерахунку на сумарну кількість водню силану, інертних газів та легуючої речовини знаходиться в діапазоні від 1 до 96 мол. %. Продукт можна використовувати для виготовлення електронних компонентів.
UAA200606737A 2003-11-19 2004-11-13 Агрегований кристалічний порошкоподібний кремній, спосіб його одержання і застосування UA87672C2 (uk)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10353995A DE10353995A1 (de) 2003-11-19 2003-11-19 Nanoskaliges, kristallines Siliciumpulver
PCT/EP2004/012890 WO2005049492A1 (en) 2003-11-19 2004-11-13 Nanoscale crystalline silicon powder

Publications (1)

Publication Number Publication Date
UA87672C2 true UA87672C2 (uk) 2009-08-10

Family

ID=34559699

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200606737A UA87672C2 (uk) 2003-11-19 2004-11-13 Агрегований кристалічний порошкоподібний кремній, спосіб його одержання і застосування

Country Status (11)

Country Link
US (3) US7776304B2 (uk)
EP (1) EP1685066B1 (uk)
JP (1) JP4607122B2 (uk)
KR (1) KR100769442B1 (uk)
CN (1) CN100404416C (uk)
AT (1) ATE517059T1 (uk)
DE (1) DE10353995A1 (uk)
IL (1) IL175701A (uk)
RU (1) RU2006121436A (uk)
UA (1) UA87672C2 (uk)
WO (1) WO2005049492A1 (uk)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
US8568684B2 (en) * 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
EP1444306B1 (de) * 2001-11-13 2007-04-04 Degussa GmbH Härtbare und wieder lösbare klebeverbindungen
DE102004012682A1 (de) 2004-03-16 2005-10-06 Degussa Ag Verfahren zur Herstellung von dreidimensionalen Objekten mittels Lasertechnik und Auftragen eines Absorbers per Inkjet-Verfahren
DE102004016766A1 (de) * 2004-04-01 2005-10-20 Degussa Nanoskalige Siliziumpartikel in negativen Elektrodenmaterialien für Lithium-Ionen-Batterien
US20080135801A1 (en) * 2004-07-29 2008-06-12 Shingo Kizaki Silicon Monoxide Powder For Secondary Battery and Method For Producing the Same
DE102004041747A1 (de) * 2004-08-28 2006-03-02 Degussa Ag Indium-Zinn-Mischoxidpulver
DE102004041746A1 (de) * 2004-08-28 2006-03-02 Degussa Ag Kautschukmischung, enthaltend nanoskalige, magnetische Füllstoffe
JP4594314B2 (ja) * 2004-09-01 2010-12-08 株式会社大阪チタニウムテクノロジーズ ＳｉＯ蒸着材、ＳｉＯ原料用Ｓｉ粉末およびＳｉＯの製造方法
DE102005049136A1 (de) * 2004-12-01 2006-06-08 Degussa Ag Zubereitung, enthaltend ein polymerisierbares Monomer und/oder ein Polymer und darin dispergiert ein superparamagnetisches Pulver
DE102005011940A1 (de) * 2005-03-14 2006-09-21 Degussa Ag Verfahren zur Herstellung von beschichteten Kohlenstoffpartikel und deren Verwendung in Anodenmaterialien für Lithium-Ionenbatterien
JP4981029B2 (ja) * 2005-04-18 2012-07-18 エボニック レーム ゲゼルシャフト ミット ベシュレンクテル ハフツング ナノスケールの無機粒子を含有する熱可塑性プラスチックからなる成形材料および成形体、該成形材料および成形体の製造法ならびにそれらの使用
GB0515357D0 (en) * 2005-07-27 2005-08-31 Psimedica Ltd Silicon package material
EP1760045A1 (en) 2005-09-03 2007-03-07 Degussa GmbH Nanoscale silicon particles
DE102005049718A1 (de) * 2005-10-14 2007-04-19 Degussa Gmbh Durch Schweißen im elektromagnetischen Wechselfeld erhältliche Kunststoffverbundformkörper
DE102005056286A1 (de) * 2005-11-24 2007-05-31 Degussa Gmbh Schweißverfahren mittels elektromagnetischer Strahlung
DE102005059405A1 (de) * 2005-12-13 2007-06-14 Degussa Gmbh Zinkoxid-Ceroxid-Kompositpartikel
DE102005060121A1 (de) * 2005-12-16 2007-06-21 Degussa Gmbh Verfahren zur Herstellung von Zinkoxidpulver
DE102006007564A1 (de) * 2006-02-16 2007-08-30 Röhm Gmbh Nanoskalige superparamagnetische Poly(meth)acrylatpolymere
US9263771B2 (en) * 2006-03-30 2016-02-16 Sanyo Electric Co., Ltd. Lithium secondary battery and method of manufacturing the same
DE102006059318A1 (de) * 2006-12-15 2008-06-19 Evonik Degussa Gmbh Poröses Silicium
CN103333526A (zh) 2007-01-03 2013-10-02 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
JP5040717B2 (ja) * 2007-03-19 2012-10-03 Ｊｎｃ株式会社 高純度シリコンの製造方法
EP2090638A1 (de) 2008-02-12 2009-08-19 Evonik Degussa GmbH Lumineszierende Silicium-Nanopartikel
WO2009151489A2 (en) * 2008-02-25 2009-12-17 Corning Incorporated Nanomaterial and method for generating nanomaterial
DE102009033251A1 (de) 2008-08-30 2010-09-23 Universität Duisburg-Essen Einlagerung von Silizium und/oder Zinn in poröse Kohlenstoffsubstrate
DE102009024667A1 (de) 2009-02-27 2010-09-02 Universität Duisburg-Essen Verfahren zur Herstellung eines Halbleiters sowie Halbleiter und elektrisches Element
US20100243963A1 (en) * 2009-03-31 2010-09-30 Integrated Photovoltaics, Incorporated Doping and milling of granular silicon
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
DE102011008814A1 (de) 2011-01-19 2012-07-19 Volkswagen Ag Verfahren zur Herstellung von einem Kohlenstoffträger mit auf der Oberfläche befindlichen nanoskaligen Siliciumpartikeln sowie ein entsprechender Kohlenstoffträger insbesondere für den Einsatz in Akkumulatoren
DE102011008815B4 (de) 2011-01-19 2024-06-20 Volkswagen Ag Verfahren zur Herstellung von einem Kohlenstoffträger mit auf der Oberfläche befindlichen nanoskaligen Siliciumpartikeln
US20140225030A1 (en) * 2012-08-14 2014-08-14 Hemlock Semiconductor Corporation Method of controlling the crystallinity of a silicon powder
WO2014060535A1 (en) * 2012-10-17 2014-04-24 Institutt For Energiteknikk Method, powder, film & lithium ion battery
CN104919012A (zh) 2013-05-24 2015-09-16 纳克公司 具有基于硅/锗的纳米颗料并且具有高粘度醇类溶剂的可印刷墨水
DE102013014627A1 (de) 2013-08-30 2015-03-05 Volkswagen Aktiengesellschaft Pre-lithiierung von Siliziumpartikeln
RU2561380C2 (ru) * 2013-12-24 2015-08-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева-КАИ" (КНИТУ-КАИ) Способ получения микротрубок
CN104928761B (zh) * 2014-03-19 2018-02-23 新特能源股份有限公司 一种硅片母合金的制备方法
EP3025701A1 (de) * 2014-11-28 2016-06-01 Evonik Degussa GmbH Nanokristalline siliciumpulver, verfahren zu dessen herstellung als auch deren verwendung
CN105399099B (zh) * 2015-11-17 2018-06-15 大连理工大学 一种掺杂纳米硅材料的制备方法及其在光超级电容器领域的应用
KR101675469B1 (ko) 2016-03-24 2016-11-14 주식회사 코스메카코리아 미세먼지를 함유한 인공대기환경 조성장치
CN105839182A (zh) * 2016-04-11 2016-08-10 西安隆基硅材料股份有限公司 晶体硅及其制备方法
WO2017183487A1 (ja) * 2016-04-21 2017-10-26 株式会社トクヤマ 金属粉末の製造方法
JP7068034B2 (ja) 2018-05-18 2022-05-16 株式会社トクヤマ シリコン微粒子及びその製造方法
CN111908472B (zh) * 2020-06-30 2023-05-16 山东天岳先进科技股份有限公司 一种掺杂稀土元素的碳化硅粉料及其制备方法与应用

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
US3900660A (en) * 1972-08-21 1975-08-19 Union Carbide Corp Manufacture of silicon metal from a mixture of chlorosilanes
US4292344A (en) * 1979-02-23 1981-09-29 Union Carbide Corporation Fluidized bed heating process and apparatus
US4341749A (en) * 1981-08-14 1982-07-27 Union Carbide Corporation Heating method for silane pyrolysis reactor
DE3610713A1 (de) * 1985-09-07 1987-03-19 Hoechst Ag Verfahren zur herstellung von silicium und dessen verbindungen in feinstteiliger form
JPS6287408A (ja) * 1985-09-07 1987-04-21 ヘキスト・アクチエンゲゼルシヤフト 特定の粒形を有する珪素の製造方法
US4994107A (en) * 1986-07-09 1991-02-19 California Institute Of Technology Aerosol reactor production of uniform submicron powders
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
JPH01239014A (ja) * 1988-03-22 1989-09-25 Nkk Corp 多結晶シリコンの製造方法及び装置
NO165288C (no) 1988-12-08 1991-01-23 Elkem As Silisiumpulver og fremgangsmaate for fremstilling av silisiumpulver.
CA2058809A1 (en) * 1991-01-07 1992-07-08 Jitendra S. Goela Chemical vapor deposition silicon and silicon carbide having improved optical properties
FR2698683B1 (fr) * 1992-12-01 1995-02-17 Europ Propulsion Dispositif de chargement de four spatial automatique.
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
GB9611437D0 (en) * 1995-08-03 1996-08-07 Secr Defence Biomaterial
US5695617A (en) * 1995-11-22 1997-12-09 Dow Corning Corporation Silicon nanoparticles
US8568684B2 (en) * 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
DE19735378A1 (de) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem Siliciumgranulat
DE10140089A1 (de) 2001-08-16 2003-02-27 Degussa Superparamagnetische oxidische Partikel, Verfahren zu deren Herstellung und ihre Verwendung
US6723421B2 (en) * 2001-10-05 2004-04-20 Energy Conversion Devices, Inc. Semiconductor with coordinatively irregular structures
DE10153547A1 (de) 2001-10-30 2003-05-22 Degussa Dispersion, enthaltend pyrogen hergestellte Abrasivpartikel mit superparamagnetischen Domänen
EP1444306B1 (de) 2001-11-13 2007-04-04 Degussa GmbH Härtbare und wieder lösbare klebeverbindungen
DE10235758A1 (de) 2002-08-05 2004-02-26 Degussa Ag Dotiertes Zinkoxidpulver, Verfahren zu seiner Herstellung und Verwendung
DE10343728A1 (de) 2003-09-22 2005-04-21 Degussa Zinkoxidpulver
DE10353996A1 (de) * 2003-11-19 2005-06-09 Degussa Ag Nanoskaliges, kristallines Siliciumpulver
DE102004010504B4 (de) 2004-03-04 2006-05-04 Degussa Ag Hochtransparente lasermarkierbare und laserschweißbare Kunststoffmaterialien, deren Verwendung und Herstellung sowie Verwendung von Metallmischoxiden und Verfahren zur Kennzeichnung von Produktionsgütern
AU2005218733A1 (en) 2004-03-04 2005-09-15 Evonik Degussa Gmbh Laser-weldable which are transparently, translucently or opaquely dyed by means of colorants
DE102004012682A1 (de) 2004-03-16 2005-10-06 Degussa Ag Verfahren zur Herstellung von dreidimensionalen Objekten mittels Lasertechnik und Auftragen eines Absorbers per Inkjet-Verfahren
DE102004041746A1 (de) 2004-08-28 2006-03-02 Degussa Ag Kautschukmischung, enthaltend nanoskalige, magnetische Füllstoffe
US7371227B2 (en) * 2004-12-17 2008-05-13 Ethicon Endo-Surgery, Inc. Trocar seal assembly
US7704586B2 (en) 2005-03-09 2010-04-27 Degussa Ag Plastic molded bodies having two-dimensional and three-dimensional image structures produced through laser subsurface engraving
JP4981029B2 (ja) 2005-04-18 2012-07-18 エボニック レーム ゲゼルシャフト ミット ベシュレンクテル ハフツング ナノスケールの無機粒子を含有する熱可塑性プラスチックからなる成形材料および成形体、該成形材料および成形体の製造法ならびにそれらの使用
DE102005040157A1 (de) 2005-08-25 2007-03-01 Degussa Ag Paste aus nanoskaligem Pulver und Dispergiermittel
DE102005059405A1 (de) 2005-12-13 2007-06-14 Degussa Gmbh Zinkoxid-Ceroxid-Kompositpartikel
DE102005060121A1 (de) 2005-12-16 2007-06-21 Degussa Gmbh Verfahren zur Herstellung von Zinkoxidpulver

Also Published As

Publication number Publication date
CN1882503A (zh) 2006-12-20
US20100264377A1 (en) 2010-10-21
JP2007511460A (ja) 2007-05-10
US7776304B2 (en) 2010-08-17
CN100404416C (zh) 2008-07-23
US7927570B2 (en) 2011-04-19
DE10353995A1 (de) 2005-06-09
EP1685066B1 (en) 2011-07-20
EP1685066A1 (en) 2006-08-02
KR20060096448A (ko) 2006-09-11
US20070094757A1 (en) 2007-04-26
WO2005049492A1 (en) 2005-06-02
ATE517059T1 (de) 2011-08-15
US8043593B2 (en) 2011-10-25
RU2006121436A (ru) 2008-01-10
JP4607122B2 (ja) 2011-01-05
IL175701A (en) 2012-04-30
IL175701A0 (en) 2006-09-05
KR100769442B1 (ko) 2007-10-22
US20100193746A1 (en) 2010-08-05

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