TWI910116B - 用於移除蝕刻殘留物之組合物、使用其之方法及其用途 - Google Patents

用於移除蝕刻殘留物之組合物、使用其之方法及其用途

Info

Publication number
TWI910116B
TWI910116B TW109133041A TW109133041A TWI910116B TW I910116 B TWI910116 B TW I910116B TW 109133041 A TW109133041 A TW 109133041A TW 109133041 A TW109133041 A TW 109133041A TW I910116 B TWI910116 B TW I910116B
Authority
TW
Taiwan
Prior art keywords
another embodiment
hydroxylamine
alkanolamines
composition
alkanolamine
Prior art date
Application number
TW109133041A
Other languages
English (en)
Chinese (zh)
Other versions
TW202122564A (zh
Inventor
來生 孫
王莉莉
愛萍 吳
李翊嘉
天牛 陳
Original Assignee
美商慧盛材料美國有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商慧盛材料美國有限責任公司 filed Critical 美商慧盛材料美國有限責任公司
Publication of TW202122564A publication Critical patent/TW202122564A/zh
Application granted granted Critical
Publication of TWI910116B publication Critical patent/TWI910116B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3227—Ethers thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/329—Carbohydrate or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/12—Oxygen-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Molecular Biology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW109133041A 2019-09-27 2020-09-24 用於移除蝕刻殘留物之組合物、使用其之方法及其用途 TWI910116B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962906810P 2019-09-27 2019-09-27
US62/906,810 2019-09-27

Publications (2)

Publication Number Publication Date
TW202122564A TW202122564A (zh) 2021-06-16
TWI910116B true TWI910116B (zh) 2026-01-01

Family

ID=75166177

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109133041A TWI910116B (zh) 2019-09-27 2020-09-24 用於移除蝕刻殘留物之組合物、使用其之方法及其用途

Country Status (7)

Country Link
US (1) US12298669B2 (https=)
EP (1) EP4034629A4 (https=)
JP (1) JP7628116B2 (https=)
KR (1) KR20220075230A (https=)
CN (1) CN114450388B (https=)
TW (1) TWI910116B (https=)
WO (1) WO2021061922A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195343A1 (ja) * 2019-03-26 2020-10-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液
WO2021126340A1 (en) * 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
CN114999911A (zh) * 2022-05-24 2022-09-02 长鑫存储技术有限公司 半导体结构及其形成方法
JP2024094844A (ja) * 2022-12-28 2024-07-10 東京応化工業株式会社 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法

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TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
CN100341992C (zh) * 2002-06-06 2007-10-10 Ekc技术公司 去除半导体生产中残留物用的组合物和方法
TWI299885B (en) * 2001-02-12 2008-08-11 Advanced Tech Materials Post chemical-mechanical planarization (cmp) cleaning composition
CN101597548A (zh) * 2008-06-06 2009-12-09 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
TW201113367A (en) * 2009-09-30 2011-04-16 Fujifilm Corp Cleaning composition, cleaning process, and process for producing semiconductor device
US20110118165A1 (en) * 2009-11-17 2011-05-19 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN102732393A (zh) * 2011-03-16 2012-10-17 气体产品与化学公司 清洁制剂和使用该清洁制剂的方法
TW201634756A (zh) * 2015-03-31 2016-10-01 氣體產品及化學品股份公司 清潔配方
TW201732028A (zh) * 2015-12-11 2017-09-16 富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法

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US5994046A (en) * 1996-06-14 1999-11-30 Fuji Photo Film Co., Ltd. Silver halide color photographic light-sensitive material and method of forming color image using the same
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KR100366974B1 (ko) * 1999-12-30 2003-01-14 유니켐스 (주) 드라이필름용 박리액 조성물 및 이를 이용한 드라이필름의박리방법
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US5334332A (en) * 1990-11-05 1994-08-02 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
TWI299885B (en) * 2001-02-12 2008-08-11 Advanced Tech Materials Post chemical-mechanical planarization (cmp) cleaning composition
CN100341992C (zh) * 2002-06-06 2007-10-10 Ekc技术公司 去除半导体生产中残留物用的组合物和方法
TWI293646B (en) * 2002-06-06 2008-02-21 Ekc Technology Inc Semiconductor process residue removal composition and process
TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
CN101597548A (zh) * 2008-06-06 2009-12-09 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
TW201113367A (en) * 2009-09-30 2011-04-16 Fujifilm Corp Cleaning composition, cleaning process, and process for producing semiconductor device
US20110118165A1 (en) * 2009-11-17 2011-05-19 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN102732393A (zh) * 2011-03-16 2012-10-17 气体产品与化学公司 清洁制剂和使用该清洁制剂的方法
TW201634756A (zh) * 2015-03-31 2016-10-01 氣體產品及化學品股份公司 清潔配方
TW201732028A (zh) * 2015-12-11 2017-09-16 富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法

Also Published As

Publication number Publication date
TW202122564A (zh) 2021-06-16
EP4034629A1 (en) 2022-08-03
CN114450388B (zh) 2025-03-21
CN114450388A (zh) 2022-05-06
EP4034629A4 (en) 2023-10-25
US12298669B2 (en) 2025-05-13
JP7628116B2 (ja) 2025-02-07
WO2021061922A1 (en) 2021-04-01
JP2022550365A (ja) 2022-12-01
KR20220075230A (ko) 2022-06-07
US20220380705A1 (en) 2022-12-01

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