JP7628116B2 - ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 - Google Patents

ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 Download PDF

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JP7628116B2
JP7628116B2 JP2022519388A JP2022519388A JP7628116B2 JP 7628116 B2 JP7628116 B2 JP 7628116B2 JP 2022519388 A JP2022519388 A JP 2022519388A JP 2022519388 A JP2022519388 A JP 2022519388A JP 7628116 B2 JP7628116 B2 JP 7628116B2
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hydroxylamine
acid
composition
alkanolamines
mixture
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JPWO2021061922A5 (https=
JP2022550365A5 (https=
JP2022550365A (ja
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スン ライション
ワン リーリー
ウー アイピン
リー イーチア
チェン ティエンニウ
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3227—Ethers thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/329—Carbohydrate or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/12—Oxygen-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Molecular Biology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2022519388A 2019-09-27 2020-09-24 ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 Active JP7628116B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962906810P 2019-09-27 2019-09-27
US62/906,810 2019-09-27
PCT/US2020/052406 WO2021061922A1 (en) 2019-09-27 2020-09-24 Compositions for removing etch residues, methods of using and use thereof

Publications (4)

Publication Number Publication Date
JP2022550365A JP2022550365A (ja) 2022-12-01
JPWO2021061922A5 JPWO2021061922A5 (https=) 2023-10-02
JP2022550365A5 JP2022550365A5 (https=) 2023-10-02
JP7628116B2 true JP7628116B2 (ja) 2025-02-07

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JP2022519388A Active JP7628116B2 (ja) 2019-09-27 2020-09-24 ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用

Country Status (7)

Country Link
US (1) US12298669B2 (https=)
EP (1) EP4034629A4 (https=)
JP (1) JP7628116B2 (https=)
KR (1) KR20220075230A (https=)
CN (1) CN114450388B (https=)
TW (1) TWI910116B (https=)
WO (1) WO2021061922A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195343A1 (ja) * 2019-03-26 2020-10-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液
WO2021126340A1 (en) * 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
CN114999911A (zh) * 2022-05-24 2022-09-02 长鑫存储技术有限公司 半导体结构及其形成方法
JP2024094844A (ja) * 2022-12-28 2024-07-10 東京応化工業株式会社 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法

Citations (6)

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US20020068684A1 (en) 1999-08-19 2002-06-06 Peters Darryl W. Stripping and cleaning compositions
JP2011080042A (ja) 2009-08-31 2011-04-21 Air Products & Chemicals Inc 水系ストリッピング及び洗浄配合物、並びにその使用方法
JP2012195590A (ja) 2011-03-16 2012-10-11 Air Products & Chemicals Inc クリーニング調合物およびそのクリーニング調合物の使用方法
JP2014084464A (ja) 2012-10-23 2014-05-12 Air Products And Chemicals Inc クリーニング用組成物
JP2016148834A (ja) 2014-12-23 2016-08-18 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ シリコンパッシベーションの改善された半水性フォトレジスト又は半導体製造残留物剥離及び洗浄用組成物
WO2017099211A1 (ja) 2015-12-11 2017-06-15 富士フイルム株式会社 洗浄液、基板洗浄方法、及び、半導体デバイスの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020068684A1 (en) 1999-08-19 2002-06-06 Peters Darryl W. Stripping and cleaning compositions
JP2011080042A (ja) 2009-08-31 2011-04-21 Air Products & Chemicals Inc 水系ストリッピング及び洗浄配合物、並びにその使用方法
JP2012195590A (ja) 2011-03-16 2012-10-11 Air Products & Chemicals Inc クリーニング調合物およびそのクリーニング調合物の使用方法
JP2014084464A (ja) 2012-10-23 2014-05-12 Air Products And Chemicals Inc クリーニング用組成物
JP2016148834A (ja) 2014-12-23 2016-08-18 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ シリコンパッシベーションの改善された半水性フォトレジスト又は半導体製造残留物剥離及び洗浄用組成物
WO2017099211A1 (ja) 2015-12-11 2017-06-15 富士フイルム株式会社 洗浄液、基板洗浄方法、及び、半導体デバイスの製造方法

Also Published As

Publication number Publication date
TW202122564A (zh) 2021-06-16
EP4034629A1 (en) 2022-08-03
TWI910116B (zh) 2026-01-01
CN114450388B (zh) 2025-03-21
CN114450388A (zh) 2022-05-06
EP4034629A4 (en) 2023-10-25
US12298669B2 (en) 2025-05-13
WO2021061922A1 (en) 2021-04-01
JP2022550365A (ja) 2022-12-01
KR20220075230A (ko) 2022-06-07
US20220380705A1 (en) 2022-12-01

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