JP2022550365A5 - - Google Patents
Info
- Publication number
- JP2022550365A5 JP2022550365A5 JP2022519388A JP2022519388A JP2022550365A5 JP 2022550365 A5 JP2022550365 A5 JP 2022550365A5 JP 2022519388 A JP2022519388 A JP 2022519388A JP 2022519388 A JP2022519388 A JP 2022519388A JP 2022550365 A5 JP2022550365 A5 JP 2022550365A5
- Authority
- JP
- Japan
- Prior art keywords
- hydroxylamine
- acid
- composition according
- mixture
- derivative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962906810P | 2019-09-27 | 2019-09-27 | |
| US62/906,810 | 2019-09-27 | ||
| PCT/US2020/052406 WO2021061922A1 (en) | 2019-09-27 | 2020-09-24 | Compositions for removing etch residues, methods of using and use thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022550365A JP2022550365A (ja) | 2022-12-01 |
| JP2022550365A5 true JP2022550365A5 (https=) | 2023-10-02 |
| JP7628116B2 JP7628116B2 (ja) | 2025-02-07 |
Family
ID=75166177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022519388A Active JP7628116B2 (ja) | 2019-09-27 | 2020-09-24 | ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12298669B2 (https=) |
| EP (1) | EP4034629A4 (https=) |
| JP (1) | JP7628116B2 (https=) |
| KR (1) | KR20220075230A (https=) |
| CN (1) | CN114450388B (https=) |
| TW (1) | TWI910116B (https=) |
| WO (1) | WO2021061922A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020195343A1 (ja) * | 2019-03-26 | 2020-10-01 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 洗浄液 |
| WO2021126340A1 (en) | 2019-12-20 | 2021-06-24 | Versum Materials Us, Llc | Co/cu selective wet etchant |
| CN114999911A (zh) * | 2022-05-24 | 2022-09-02 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
| JP2024094844A (ja) * | 2022-12-28 | 2024-07-10 | 東京応化工業株式会社 | 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| US6492311B2 (en) * | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
| US6825156B2 (en) | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US5419779A (en) | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
| US5994046A (en) * | 1996-06-14 | 1999-11-30 | Fuji Photo Film Co., Ltd. | Silver halide color photographic light-sensitive material and method of forming color image using the same |
| AU6530000A (en) * | 1999-08-19 | 2001-03-19 | Ashland Inc. | Stripping and cleaning compositions |
| US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| KR100366974B1 (ko) | 1999-12-30 | 2003-01-14 | 유니켐스 (주) | 드라이필름용 박리액 조성물 및 이를 이용한 드라이필름의박리방법 |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| KR20040041019A (ko) | 2002-11-08 | 2004-05-13 | 스미또모 가가꾸 고오교오 가부시끼가이샤 | 반도체 기판용 세정액 |
| TWI339780B (en) | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
| WO2009058275A1 (en) | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions |
| EP2207872B1 (en) * | 2007-10-29 | 2013-07-03 | Ekc Technology, Inc. | Novel nitrile and amidoxime compounds and methods of preparation |
| CN101597548A (zh) * | 2008-06-06 | 2009-12-09 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
| US8518865B2 (en) | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| JP5646882B2 (ja) | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
| US8101561B2 (en) * | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| US8889609B2 (en) | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
| US9536730B2 (en) * | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
| KR101459725B1 (ko) * | 2014-02-18 | 2014-11-12 | 주식회사 코원이노텍 | 포스트-에칭 포토레지스트 에칭 중합체 및 잔류물을 제거하기 위한 스트리퍼 조성물 |
| JP6501492B2 (ja) * | 2014-10-31 | 2019-04-17 | 関東化學株式会社 | フォトレジスト残渣および/またはポリマー残渣を除去するための組成物 |
| WO2016076034A1 (ja) * | 2014-11-13 | 2016-05-19 | 三菱瓦斯化学株式会社 | 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法 |
| US10073351B2 (en) | 2014-12-23 | 2018-09-11 | Versum Materials Us, Llc | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
| CN113214920A (zh) * | 2015-03-31 | 2021-08-06 | 弗萨姆材料美国有限责任公司 | 清洁制剂 |
| TWI790196B (zh) | 2015-12-11 | 2023-01-21 | 日商富士軟片股份有限公司 | 洗淨液、基板洗淨方法及半導體元件的製造方法 |
-
2020
- 2020-09-24 WO PCT/US2020/052406 patent/WO2021061922A1/en not_active Ceased
- 2020-09-24 JP JP2022519388A patent/JP7628116B2/ja active Active
- 2020-09-24 TW TW109133041A patent/TWI910116B/zh active
- 2020-09-24 EP EP20870060.9A patent/EP4034629A4/en active Pending
- 2020-09-24 US US17/753,256 patent/US12298669B2/en active Active
- 2020-09-24 KR KR1020227013937A patent/KR20220075230A/ko active Pending
- 2020-09-24 CN CN202080067656.9A patent/CN114450388B/zh active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022550365A5 (https=) | ||
| TWI281944B (en) | Microelectronic cleaning compositions containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning | |
| JP5662365B2 (ja) | クリーニング調合物およびそのクリーニング調合物の使用方法 | |
| DE60108774T2 (de) | Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten | |
| ES2282453T3 (es) | Composicion de limpieza alcalina sin amoniaco que presentan una mejor compatibilidad con substratos destinados a elementos microelectronicos. | |
| JP4633785B2 (ja) | ナノエレクトロニクスおよびマイクロエレクトロニクスの洗浄組成物 | |
| JP4620680B2 (ja) | ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング/灰化後の残渣の除去剤およびフォトレジスト剥離組成物 | |
| JP2016040382A5 (https=) | ||
| TW200934865A (en) | Formulations for cleaning memory device structures | |
| TW200300795A (en) | Formulations including a 1, 3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures | |
| TW201127939A (en) | Troika acid semiconductor cleaning compositions and methods of use | |
| JP2009141310A (ja) | アルファ−ヒドロキシカルボニル化合物/アミンまたはアンモニア反応の結合体のオリゴマー型またはポリマー型物質を含有するフッ化物含有フォトレジスト剥離剤または残渣除去洗浄組成物 | |
| CN104946429A (zh) | 一种低蚀刻的去除光阻蚀刻残留物的清洗液 | |
| JP4177758B2 (ja) | 基板適合性が改善されたアンモニア不含アルカリ性マイクロエレクトロニクス洗浄組成物 | |
| CN113430070A (zh) | 一种CoWP兼容性的半水基清洗液、其制备方法及应用 | |
| CN101685273B (zh) | 一种去除光阻层残留物的清洗液 | |
| JP2009141311A (ja) | アルファ−ヒドロキシカルボニル化合物/アミンまたはアンモニア反応の結合体のオリゴマー型またはポリマー型物質を含有するフッ化物不含フォトレジスト剥離剤または残渣除去洗浄組成物 | |
| JP2022541219A5 (https=) | ||
| JP2003155586A (ja) | 電子部品用洗浄液 | |
| CN104674242A (zh) | 一种换热器清洗剂 | |
| CN103773626B (zh) | 一种低蚀刻的去除光阻蚀刻残留物的清洗液 | |
| TWI431112B (zh) | Hydroxylamine - containing cleaning solution and its application | |
| TW202449131A (zh) | 用於電子製造應用之含經n取代之哌𠯤的組成物 |