JP2022550365A5 - - Google Patents

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Publication number
JP2022550365A5
JP2022550365A5 JP2022519388A JP2022519388A JP2022550365A5 JP 2022550365 A5 JP2022550365 A5 JP 2022550365A5 JP 2022519388 A JP2022519388 A JP 2022519388A JP 2022519388 A JP2022519388 A JP 2022519388A JP 2022550365 A5 JP2022550365 A5 JP 2022550365A5
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JP
Japan
Prior art keywords
hydroxylamine
acid
composition according
mixture
derivative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022519388A
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English (en)
Japanese (ja)
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JP2022550365A (ja
JP7628116B2 (ja
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Application filed filed Critical
Priority claimed from PCT/US2020/052406 external-priority patent/WO2021061922A1/en
Publication of JP2022550365A publication Critical patent/JP2022550365A/ja
Publication of JP2022550365A5 publication Critical patent/JP2022550365A5/ja
Application granted granted Critical
Publication of JP7628116B2 publication Critical patent/JP7628116B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022519388A 2019-09-27 2020-09-24 ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 Active JP7628116B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962906810P 2019-09-27 2019-09-27
US62/906,810 2019-09-27
PCT/US2020/052406 WO2021061922A1 (en) 2019-09-27 2020-09-24 Compositions for removing etch residues, methods of using and use thereof

Publications (3)

Publication Number Publication Date
JP2022550365A JP2022550365A (ja) 2022-12-01
JP2022550365A5 true JP2022550365A5 (https=) 2023-10-02
JP7628116B2 JP7628116B2 (ja) 2025-02-07

Family

ID=75166177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022519388A Active JP7628116B2 (ja) 2019-09-27 2020-09-24 ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用

Country Status (7)

Country Link
US (1) US12298669B2 (https=)
EP (1) EP4034629A4 (https=)
JP (1) JP7628116B2 (https=)
KR (1) KR20220075230A (https=)
CN (1) CN114450388B (https=)
TW (1) TWI910116B (https=)
WO (1) WO2021061922A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195343A1 (ja) * 2019-03-26 2020-10-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液
WO2021126340A1 (en) 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
CN114999911A (zh) * 2022-05-24 2022-09-02 长鑫存储技术有限公司 半导体结构及其形成方法
JP2024094844A (ja) * 2022-12-28 2024-07-10 東京応化工業株式会社 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法

Family Cites Families (25)

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US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5994046A (en) * 1996-06-14 1999-11-30 Fuji Photo Film Co., Ltd. Silver halide color photographic light-sensitive material and method of forming color image using the same
AU6530000A (en) * 1999-08-19 2001-03-19 Ashland Inc. Stripping and cleaning compositions
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
KR100366974B1 (ko) 1999-12-30 2003-01-14 유니켐스 (주) 드라이필름용 박리액 조성물 및 이를 이용한 드라이필름의박리방법
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
KR20040041019A (ko) 2002-11-08 2004-05-13 스미또모 가가꾸 고오교오 가부시끼가이샤 반도체 기판용 세정액
TWI339780B (en) 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
WO2009058275A1 (en) 2007-10-29 2009-05-07 Ekc Technology, Inc. Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions
EP2207872B1 (en) * 2007-10-29 2013-07-03 Ekc Technology, Inc. Novel nitrile and amidoxime compounds and methods of preparation
CN101597548A (zh) * 2008-06-06 2009-12-09 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
US8518865B2 (en) 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
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JP6501492B2 (ja) * 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および/またはポリマー残渣を除去するための組成物
WO2016076034A1 (ja) * 2014-11-13 2016-05-19 三菱瓦斯化学株式会社 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
TWI790196B (zh) 2015-12-11 2023-01-21 日商富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法

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