JP2022541219A5 - - Google Patents

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Publication number
JP2022541219A5
JP2022541219A5 JP2022502569A JP2022502569A JP2022541219A5 JP 2022541219 A5 JP2022541219 A5 JP 2022541219A5 JP 2022502569 A JP2022502569 A JP 2022502569A JP 2022502569 A JP2022502569 A JP 2022502569A JP 2022541219 A5 JP2022541219 A5 JP 2022541219A5
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JP
Japan
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acid
approximately
composition according
note
appendix
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JP2022502569A
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English (en)
Japanese (ja)
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JP7566003B2 (ja
JP2022541219A (ja
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Priority claimed from PCT/US2020/041881 external-priority patent/WO2021011515A1/en
Publication of JP2022541219A publication Critical patent/JP2022541219A/ja
Publication of JP2022541219A5 publication Critical patent/JP2022541219A5/ja
Application granted granted Critical
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JP2022502569A 2019-07-15 2020-07-14 エッチング残留物を除去するための組成物、その使用の方法及びその使用 Active JP7566003B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962874477P 2019-07-15 2019-07-15
US62/874,477 2019-07-15
PCT/US2020/041881 WO2021011515A1 (en) 2019-07-15 2020-07-14 Compositions for removing etch residues, methods of using and use thereof

Publications (3)

Publication Number Publication Date
JP2022541219A JP2022541219A (ja) 2022-09-22
JP2022541219A5 true JP2022541219A5 (https=) 2023-06-29
JP7566003B2 JP7566003B2 (ja) 2024-10-11

Family

ID=74209986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502569A Active JP7566003B2 (ja) 2019-07-15 2020-07-14 エッチング残留物を除去するための組成物、その使用の方法及びその使用

Country Status (7)

Country Link
US (1) US20220251480A1 (https=)
EP (1) EP3999621A4 (https=)
JP (1) JP7566003B2 (https=)
KR (1) KR102886380B1 (https=)
CN (1) CN114127230A (https=)
TW (1) TWI850424B (https=)
WO (1) WO2021011515A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021126340A1 (en) 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
TWI794010B (zh) * 2022-02-11 2023-02-21 南亞科技股份有限公司 製造半導體元件的方法

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP3373105B2 (ja) * 1996-03-11 2003-02-04 富士フイルムアーチ株式会社 フォトレジスト剥離液
US6268323B1 (en) 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP3757045B2 (ja) * 1997-12-10 2006-03-22 昭和電工株式会社 サイドウォール除去液
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
EP1125168A1 (en) 1998-05-18 2001-08-22 Advanced Technology Materials, Inc. Stripping compositions for semiconductor substrates
KR100360397B1 (ko) * 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
CN100529014C (zh) * 2002-10-22 2009-08-19 Ekc技术公司 清洗半导体装置的磷酸组合物水溶液
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
CN101432412A (zh) * 2006-03-28 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的含有防腐剂化合物的清洗溶液
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
CN101899369B (zh) * 2009-06-01 2015-10-21 3M创新有限公司 发动机清洁组合物和用于清洁发动机的方法
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
EP3502225B1 (en) * 2017-12-22 2021-09-01 Versum Materials US, LLC Photoresist stripper
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물

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