CN114127230A - 用于去除蚀刻残留物的组合物、其使用方法及用途 - Google Patents

用于去除蚀刻残留物的组合物、其使用方法及用途 Download PDF

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Publication number
CN114127230A
CN114127230A CN202080051185.2A CN202080051185A CN114127230A CN 114127230 A CN114127230 A CN 114127230A CN 202080051185 A CN202080051185 A CN 202080051185A CN 114127230 A CN114127230 A CN 114127230A
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CN
China
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acid
composition
weight
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Pending
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CN202080051185.2A
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English (en)
Chinese (zh)
Inventor
孙来生
王莉莉
吴爱萍
李翊嘉
陈天牛
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Versum Materials US LLC
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Versum Materials US LLC
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Publication of CN114127230A publication Critical patent/CN114127230A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
CN202080051185.2A 2019-07-15 2020-07-14 用于去除蚀刻残留物的组合物、其使用方法及用途 Pending CN114127230A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962874477P 2019-07-15 2019-07-15
US62/874,477 2019-07-15
PCT/US2020/041881 WO2021011515A1 (en) 2019-07-15 2020-07-14 Compositions for removing etch residues, methods of using and use thereof

Publications (1)

Publication Number Publication Date
CN114127230A true CN114127230A (zh) 2022-03-01

Family

ID=74209986

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080051185.2A Pending CN114127230A (zh) 2019-07-15 2020-07-14 用于去除蚀刻残留物的组合物、其使用方法及用途

Country Status (7)

Country Link
US (1) US20220251480A1 (https=)
EP (1) EP3999621A4 (https=)
JP (1) JP7566003B2 (https=)
KR (1) KR102886380B1 (https=)
CN (1) CN114127230A (https=)
TW (1) TWI850424B (https=)
WO (1) WO2021011515A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021126340A1 (en) 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
TWI794010B (zh) * 2022-02-11 2023-02-21 南亞科技股份有限公司 製造半導體元件的方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09244263A (ja) * 1996-03-11 1997-09-19 Fuji Hanto Electron Technol Kk フォトレジスト剥離液
JPH11174690A (ja) * 1997-12-10 1999-07-02 Tokuyama Sekiyu Kagaku Kk サイドウォール除去液
TW552481B (en) * 1998-08-18 2003-09-11 Arch Spec Chem Inc Non-corrosive stripping and cleaning composition
CN1729269A (zh) * 2002-10-22 2006-02-01 Ekc技术公司 清洗半导体装置的磷酸组合物水溶液
CN101013273A (zh) * 2006-01-30 2007-08-08 气体产品与化学公司 清洁制剂
CN101432412A (zh) * 2006-03-28 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的含有防腐剂化合物的清洗溶液
US20100056409A1 (en) * 2005-01-27 2010-03-04 Elizabeth Walker Compositions for processing of semiconductor substrates
CN101899369A (zh) * 2009-06-01 2010-12-01 3M创新有限公司 发动机清洁组合物和用于清洁发动机的方法
CN102732393A (zh) * 2011-03-16 2012-10-17 气体产品与化学公司 清洁制剂和使用该清洁制剂的方法
CN103777475A (zh) * 2012-10-23 2014-05-07 气体产品与化学公司 清洁制剂
CN107406810A (zh) * 2015-03-31 2017-11-28 弗萨姆材料美国有限责任公司 清洁制剂
CN111197182A (zh) * 2018-11-19 2020-05-26 弗萨姆材料美国有限责任公司 具有氧化硅腐蚀抑制剂的蚀刻溶液及其使用方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
EP1125168A1 (en) 1998-05-18 2001-08-22 Advanced Technology Materials, Inc. Stripping compositions for semiconductor substrates
KR100360397B1 (ko) * 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
EP3502225B1 (en) * 2017-12-22 2021-09-01 Versum Materials US, LLC Photoresist stripper
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09244263A (ja) * 1996-03-11 1997-09-19 Fuji Hanto Electron Technol Kk フォトレジスト剥離液
JPH11174690A (ja) * 1997-12-10 1999-07-02 Tokuyama Sekiyu Kagaku Kk サイドウォール除去液
TW552481B (en) * 1998-08-18 2003-09-11 Arch Spec Chem Inc Non-corrosive stripping and cleaning composition
CN1729269A (zh) * 2002-10-22 2006-02-01 Ekc技术公司 清洗半导体装置的磷酸组合物水溶液
US20100056409A1 (en) * 2005-01-27 2010-03-04 Elizabeth Walker Compositions for processing of semiconductor substrates
CN101013273A (zh) * 2006-01-30 2007-08-08 气体产品与化学公司 清洁制剂
CN101432412A (zh) * 2006-03-28 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的含有防腐剂化合物的清洗溶液
CN101899369A (zh) * 2009-06-01 2010-12-01 3M创新有限公司 发动机清洁组合物和用于清洁发动机的方法
CN102732393A (zh) * 2011-03-16 2012-10-17 气体产品与化学公司 清洁制剂和使用该清洁制剂的方法
CN103777475A (zh) * 2012-10-23 2014-05-07 气体产品与化学公司 清洁制剂
CN107406810A (zh) * 2015-03-31 2017-11-28 弗萨姆材料美国有限责任公司 清洁制剂
CN111197182A (zh) * 2018-11-19 2020-05-26 弗萨姆材料美国有限责任公司 具有氧化硅腐蚀抑制剂的蚀刻溶液及其使用方法

Also Published As

Publication number Publication date
TWI850424B (zh) 2024-08-01
JP7566003B2 (ja) 2024-10-11
WO2021011515A1 (en) 2021-01-21
TW202113057A (zh) 2021-04-01
JP2022541219A (ja) 2022-09-22
KR20220035164A (ko) 2022-03-21
KR102886380B1 (ko) 2025-11-13
EP3999621A1 (en) 2022-05-25
US20220251480A1 (en) 2022-08-11
EP3999621A4 (en) 2023-08-16

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