TWI901737B - 檢查裝置 - Google Patents

檢查裝置

Info

Publication number
TWI901737B
TWI901737B TW110129602A TW110129602A TWI901737B TW I901737 B TWI901737 B TW I901737B TW 110129602 A TW110129602 A TW 110129602A TW 110129602 A TW110129602 A TW 110129602A TW I901737 B TWI901737 B TW I901737B
Authority
TW
Taiwan
Prior art keywords
light
optical amplifier
optical
input
photodetector
Prior art date
Application number
TW110129602A
Other languages
English (en)
Chinese (zh)
Other versions
TW202212847A (zh
Inventor
中村共則
内角哲人
西沢充哲
Original Assignee
日商濱松赫德尼古斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商濱松赫德尼古斯股份有限公司 filed Critical 日商濱松赫德尼古斯股份有限公司
Publication of TW202212847A publication Critical patent/TW202212847A/zh
Application granted granted Critical
Publication of TWI901737B publication Critical patent/TWI901737B/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31708Analysis of signal quality
    • G01R31/31709Jitter measurements; Jitter generators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW110129602A 2020-09-23 2021-08-11 檢查裝置 TWI901737B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020158395 2020-09-23
JP2020-158395 2020-09-23

Publications (2)

Publication Number Publication Date
TW202212847A TW202212847A (zh) 2022-04-01
TWI901737B true TWI901737B (zh) 2025-10-21

Family

ID=80845240

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110129602A TWI901737B (zh) 2020-09-23 2021-08-11 檢查裝置

Country Status (7)

Country Link
US (1) US12320842B2 (https=)
EP (1) EP4213189B1 (https=)
JP (1) JP7608469B2 (https=)
KR (1) KR102799599B1 (https=)
CN (1) CN116195042A (https=)
TW (1) TWI901737B (https=)
WO (1) WO2022064798A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014220A (ja) * 2022-07-22 2024-02-01 国立研究開発法人産業技術総合研究所 高周波イメージング装置
WO2025089056A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 半導体検査装置及び半導体検査方法
WO2025089055A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 電気信号計測装置及び電気信号計測方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06109584A (ja) * 1992-01-09 1994-04-19 Hikari Keisoku Gijutsu Kaihatsu Kk 光ファイバ測定装置
US20070002329A1 (en) * 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
JP2015105851A (ja) * 2013-11-29 2015-06-08 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
CN107615603A (zh) * 2015-05-29 2018-01-19 浜松光子学株式会社 光源装置和检查装置
TW201825922A (zh) * 2016-09-28 2018-07-16 日商濱松赫德尼古斯股份有限公司 半導體元件檢查方法及半導體元件檢查裝置

Family Cites Families (16)

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JPS57150209A (en) 1981-03-11 1982-09-17 Mitsubishi Electric Corp Automatic gain controlling circuit of optical signal
DE3334494A1 (de) 1983-09-23 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde
JP3280720B2 (ja) 1992-11-16 2002-05-13 松下電器産業株式会社 基板検査装置および基板検査方法
JP2710585B2 (ja) 1995-06-06 1998-02-10 株式会社明電舎 産業用マニプレータ
JP2000244417A (ja) 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
US6833913B1 (en) 2002-02-26 2004-12-21 Kla-Tencor Technologies Corporation Apparatus and methods for optically inspecting a sample for anomalies
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
JP4983576B2 (ja) * 2007-11-30 2012-07-25 アイシン・エィ・ダブリュ株式会社 施設情報表示装置、施設情報表示方法、施設情報表示プログラム
CN102472786B (zh) 2009-07-10 2014-09-03 日本电气株式会社 电磁场测量设备和电磁场测量方法
JP5417205B2 (ja) * 2010-01-29 2014-02-12 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
JP2012038805A (ja) 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP5432933B2 (ja) * 2011-02-03 2014-03-05 株式会社セルシス マンガを表示する方法、プログラム、および電子機器
US20170019170A1 (en) 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe
JP6407555B2 (ja) 2014-04-24 2018-10-17 浜松ホトニクス株式会社 画像生成装置及び画像生成方法
WO2015166910A1 (ja) 2014-04-28 2015-11-05 株式会社ニコン パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法
JP6419893B1 (ja) * 2017-06-02 2018-11-07 浜松ホトニクス株式会社 半導体検査装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06109584A (ja) * 1992-01-09 1994-04-19 Hikari Keisoku Gijutsu Kaihatsu Kk 光ファイバ測定装置
US20070002329A1 (en) * 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
JP2015105851A (ja) * 2013-11-29 2015-06-08 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
CN107615603A (zh) * 2015-05-29 2018-01-19 浜松光子学株式会社 光源装置和检查装置
TW201825922A (zh) * 2016-09-28 2018-07-16 日商濱松赫德尼古斯股份有限公司 半導體元件檢查方法及半導體元件檢查裝置

Also Published As

Publication number Publication date
JPWO2022064798A1 (https=) 2022-03-31
TW202212847A (zh) 2022-04-01
US12320842B2 (en) 2025-06-03
EP4213189A1 (en) 2023-07-19
WO2022064798A1 (ja) 2022-03-31
EP4213189B1 (en) 2026-03-04
CN116195042A (zh) 2023-05-30
KR20230070410A (ko) 2023-05-23
KR102799599B1 (ko) 2025-04-23
EP4213189A4 (en) 2024-09-18
US20240012047A1 (en) 2024-01-11
JP7608469B2 (ja) 2025-01-06

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