TWI901737B - 檢查裝置 - Google Patents
檢查裝置Info
- Publication number
- TWI901737B TWI901737B TW110129602A TW110129602A TWI901737B TW I901737 B TWI901737 B TW I901737B TW 110129602 A TW110129602 A TW 110129602A TW 110129602 A TW110129602 A TW 110129602A TW I901737 B TWI901737 B TW I901737B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- optical amplifier
- optical
- input
- photodetector
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31708—Analysis of signal quality
- G01R31/31709—Jitter measurements; Jitter generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020158395 | 2020-09-23 | ||
| JP2020-158395 | 2020-09-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202212847A TW202212847A (zh) | 2022-04-01 |
| TWI901737B true TWI901737B (zh) | 2025-10-21 |
Family
ID=80845240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110129602A TWI901737B (zh) | 2020-09-23 | 2021-08-11 | 檢查裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12320842B2 (https=) |
| EP (1) | EP4213189B1 (https=) |
| JP (1) | JP7608469B2 (https=) |
| KR (1) | KR102799599B1 (https=) |
| CN (1) | CN116195042A (https=) |
| TW (1) | TWI901737B (https=) |
| WO (1) | WO2022064798A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024014220A (ja) * | 2022-07-22 | 2024-02-01 | 国立研究開発法人産業技術総合研究所 | 高周波イメージング装置 |
| WO2025089056A1 (ja) | 2023-10-26 | 2025-05-01 | 浜松ホトニクス株式会社 | 半導体検査装置及び半導体検査方法 |
| WO2025089055A1 (ja) | 2023-10-26 | 2025-05-01 | 浜松ホトニクス株式会社 | 電気信号計測装置及び電気信号計測方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06109584A (ja) * | 1992-01-09 | 1994-04-19 | Hikari Keisoku Gijutsu Kaihatsu Kk | 光ファイバ測定装置 |
| US20070002329A1 (en) * | 2005-06-29 | 2007-01-04 | Steven Kasapi | Laser probing system for integrated circuits |
| JP2015105851A (ja) * | 2013-11-29 | 2015-06-08 | 浜松ホトニクス株式会社 | 半導体デバイス計測装置及び半導体デバイス計測方法 |
| CN107615603A (zh) * | 2015-05-29 | 2018-01-19 | 浜松光子学株式会社 | 光源装置和检查装置 |
| TW201825922A (zh) * | 2016-09-28 | 2018-07-16 | 日商濱松赫德尼古斯股份有限公司 | 半導體元件檢查方法及半導體元件檢查裝置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57150209A (en) | 1981-03-11 | 1982-09-17 | Mitsubishi Electric Corp | Automatic gain controlling circuit of optical signal |
| DE3334494A1 (de) | 1983-09-23 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde |
| JP3280720B2 (ja) | 1992-11-16 | 2002-05-13 | 松下電器産業株式会社 | 基板検査装置および基板検査方法 |
| JP2710585B2 (ja) | 1995-06-06 | 1998-02-10 | 株式会社明電舎 | 産業用マニプレータ |
| JP2000244417A (ja) | 1999-02-22 | 2000-09-08 | Nec Eng Ltd | 光前置増幅器 |
| US6833913B1 (en) | 2002-02-26 | 2004-12-21 | Kla-Tencor Technologies Corporation | Apparatus and methods for optically inspecting a sample for anomalies |
| US7733100B2 (en) | 2005-08-26 | 2010-06-08 | Dcg Systems, Inc. | System and method for modulation mapping |
| JP4983576B2 (ja) * | 2007-11-30 | 2012-07-25 | アイシン・エィ・ダブリュ株式会社 | 施設情報表示装置、施設情報表示方法、施設情報表示プログラム |
| CN102472786B (zh) | 2009-07-10 | 2014-09-03 | 日本电气株式会社 | 电磁场测量设备和电磁场测量方法 |
| JP5417205B2 (ja) * | 2010-01-29 | 2014-02-12 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置及び欠陥検査方法 |
| JP2012038805A (ja) | 2010-08-04 | 2012-02-23 | Precise Gauges Co Ltd | 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置 |
| JP5432933B2 (ja) * | 2011-02-03 | 2014-03-05 | 株式会社セルシス | マンガを表示する方法、プログラム、および電子機器 |
| US20170019170A1 (en) | 2014-03-07 | 2017-01-19 | Keysight Technologies, Inc. | Dual-Directional Electro-Optic Probe |
| JP6407555B2 (ja) | 2014-04-24 | 2018-10-17 | 浜松ホトニクス株式会社 | 画像生成装置及び画像生成方法 |
| WO2015166910A1 (ja) | 2014-04-28 | 2015-11-05 | 株式会社ニコン | パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法 |
| JP6419893B1 (ja) * | 2017-06-02 | 2018-11-07 | 浜松ホトニクス株式会社 | 半導体検査装置 |
-
2021
- 2021-06-25 EP EP21871930.0A patent/EP4213189B1/en active Active
- 2021-06-25 WO PCT/JP2021/024153 patent/WO2022064798A1/ja not_active Ceased
- 2021-06-25 US US18/020,273 patent/US12320842B2/en active Active
- 2021-06-25 CN CN202180064713.2A patent/CN116195042A/zh active Pending
- 2021-06-25 JP JP2022551149A patent/JP7608469B2/ja active Active
- 2021-06-25 KR KR1020227043070A patent/KR102799599B1/ko active Active
- 2021-08-11 TW TW110129602A patent/TWI901737B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06109584A (ja) * | 1992-01-09 | 1994-04-19 | Hikari Keisoku Gijutsu Kaihatsu Kk | 光ファイバ測定装置 |
| US20070002329A1 (en) * | 2005-06-29 | 2007-01-04 | Steven Kasapi | Laser probing system for integrated circuits |
| JP2015105851A (ja) * | 2013-11-29 | 2015-06-08 | 浜松ホトニクス株式会社 | 半導体デバイス計測装置及び半導体デバイス計測方法 |
| CN107615603A (zh) * | 2015-05-29 | 2018-01-19 | 浜松光子学株式会社 | 光源装置和检查装置 |
| TW201825922A (zh) * | 2016-09-28 | 2018-07-16 | 日商濱松赫德尼古斯股份有限公司 | 半導體元件檢查方法及半導體元件檢查裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022064798A1 (https=) | 2022-03-31 |
| TW202212847A (zh) | 2022-04-01 |
| US12320842B2 (en) | 2025-06-03 |
| EP4213189A1 (en) | 2023-07-19 |
| WO2022064798A1 (ja) | 2022-03-31 |
| EP4213189B1 (en) | 2026-03-04 |
| CN116195042A (zh) | 2023-05-30 |
| KR20230070410A (ko) | 2023-05-23 |
| KR102799599B1 (ko) | 2025-04-23 |
| EP4213189A4 (en) | 2024-09-18 |
| US20240012047A1 (en) | 2024-01-11 |
| JP7608469B2 (ja) | 2025-01-06 |
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