KR102799599B1 - 검사 장치 - Google Patents

검사 장치 Download PDF

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Publication number
KR102799599B1
KR102799599B1 KR1020227043070A KR20227043070A KR102799599B1 KR 102799599 B1 KR102799599 B1 KR 102799599B1 KR 1020227043070 A KR1020227043070 A KR 1020227043070A KR 20227043070 A KR20227043070 A KR 20227043070A KR 102799599 B1 KR102799599 B1 KR 102799599B1
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KR
South Korea
Prior art keywords
light
optical amplifier
optical
amplifier
input
Prior art date
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KR1020227043070A
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English (en)
Korean (ko)
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KR20230070410A (ko
Inventor
도모노리 나카무라
아키히토 우치카도
미츠노리 니시자와
Original Assignee
하마마츠 포토닉스 가부시키가이샤
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Publication of KR20230070410A publication Critical patent/KR20230070410A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31708—Analysis of signal quality
    • G01R31/31709—Jitter measurements; Jitter generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020227043070A 2020-09-23 2021-06-25 검사 장치 Active KR102799599B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-158395 2020-09-23
JP2020158395 2020-09-23
PCT/JP2021/024153 WO2022064798A1 (ja) 2020-09-23 2021-06-25 検査装置

Publications (2)

Publication Number Publication Date
KR20230070410A KR20230070410A (ko) 2023-05-23
KR102799599B1 true KR102799599B1 (ko) 2025-04-23

Family

ID=80845240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227043070A Active KR102799599B1 (ko) 2020-09-23 2021-06-25 검사 장치

Country Status (7)

Country Link
US (1) US12320842B2 (https=)
EP (1) EP4213189B1 (https=)
JP (1) JP7608469B2 (https=)
KR (1) KR102799599B1 (https=)
CN (1) CN116195042A (https=)
TW (1) TWI901737B (https=)
WO (1) WO2022064798A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014220A (ja) * 2022-07-22 2024-02-01 国立研究開発法人産業技術総合研究所 高周波イメージング装置
WO2025089056A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 半導体検査装置及び半導体検査方法
WO2025089055A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 電気信号計測装置及び電気信号計測方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070002329A1 (en) * 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
US20150153408A1 (en) 2013-11-29 2015-06-04 Hamamatsu Photonics K.K. Apparatus for testing a semiconductor device and method of testing a semiconductor device

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JPS57150209A (en) 1981-03-11 1982-09-17 Mitsubishi Electric Corp Automatic gain controlling circuit of optical signal
DE3334494A1 (de) 1983-09-23 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde
JPH0778462B2 (ja) * 1992-01-09 1995-08-23 光計測技術開発株式会社 光ファイバ測定装置
JP3280720B2 (ja) 1992-11-16 2002-05-13 松下電器産業株式会社 基板検査装置および基板検査方法
JP2710585B2 (ja) 1995-06-06 1998-02-10 株式会社明電舎 産業用マニプレータ
JP2000244417A (ja) 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
US6833913B1 (en) 2002-02-26 2004-12-21 Kla-Tencor Technologies Corporation Apparatus and methods for optically inspecting a sample for anomalies
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
JP4983576B2 (ja) * 2007-11-30 2012-07-25 アイシン・エィ・ダブリュ株式会社 施設情報表示装置、施設情報表示方法、施設情報表示プログラム
CN102472786B (zh) 2009-07-10 2014-09-03 日本电气株式会社 电磁场测量设备和电磁场测量方法
JP5417205B2 (ja) * 2010-01-29 2014-02-12 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
JP2012038805A (ja) 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP5432933B2 (ja) * 2011-02-03 2014-03-05 株式会社セルシス マンガを表示する方法、プログラム、および電子機器
US20170019170A1 (en) 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe
JP6407555B2 (ja) 2014-04-24 2018-10-17 浜松ホトニクス株式会社 画像生成装置及び画像生成方法
WO2015166910A1 (ja) 2014-04-28 2015-11-05 株式会社ニコン パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法
US10408874B2 (en) 2015-05-29 2019-09-10 Hamamatsu Photonics K.K. Light source device and inspection device
JP6714485B2 (ja) 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP6419893B1 (ja) * 2017-06-02 2018-11-07 浜松ホトニクス株式会社 半導体検査装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070002329A1 (en) * 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
US20150153408A1 (en) 2013-11-29 2015-06-04 Hamamatsu Photonics K.K. Apparatus for testing a semiconductor device and method of testing a semiconductor device

Also Published As

Publication number Publication date
JPWO2022064798A1 (https=) 2022-03-31
TW202212847A (zh) 2022-04-01
US12320842B2 (en) 2025-06-03
TWI901737B (zh) 2025-10-21
EP4213189A1 (en) 2023-07-19
WO2022064798A1 (ja) 2022-03-31
EP4213189B1 (en) 2026-03-04
CN116195042A (zh) 2023-05-30
KR20230070410A (ko) 2023-05-23
EP4213189A4 (en) 2024-09-18
US20240012047A1 (en) 2024-01-11
JP7608469B2 (ja) 2025-01-06

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