CN116195042A - 检查装置 - Google Patents

检查装置 Download PDF

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Publication number
CN116195042A
CN116195042A CN202180064713.2A CN202180064713A CN116195042A CN 116195042 A CN116195042 A CN 116195042A CN 202180064713 A CN202180064713 A CN 202180064713A CN 116195042 A CN116195042 A CN 116195042A
Authority
CN
China
Prior art keywords
light
optical amplifier
optical
input
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180064713.2A
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English (en)
Chinese (zh)
Inventor
中村共则
内角哲人
西泽充哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN116195042A publication Critical patent/CN116195042A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31708—Analysis of signal quality
    • G01R31/31709—Jitter measurements; Jitter generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN202180064713.2A 2020-09-23 2021-06-25 检查装置 Pending CN116195042A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020158395 2020-09-23
JP2020-158395 2020-09-23
PCT/JP2021/024153 WO2022064798A1 (ja) 2020-09-23 2021-06-25 検査装置

Publications (1)

Publication Number Publication Date
CN116195042A true CN116195042A (zh) 2023-05-30

Family

ID=80845240

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180064713.2A Pending CN116195042A (zh) 2020-09-23 2021-06-25 检查装置

Country Status (7)

Country Link
US (1) US12320842B2 (https=)
EP (1) EP4213189B1 (https=)
JP (1) JP7608469B2 (https=)
KR (1) KR102799599B1 (https=)
CN (1) CN116195042A (https=)
TW (1) TWI901737B (https=)
WO (1) WO2022064798A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014220A (ja) * 2022-07-22 2024-02-01 国立研究開発法人産業技術総合研究所 高周波イメージング装置
WO2025089056A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 半導体検査装置及び半導体検査方法
WO2025089055A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 電気信号計測装置及び電気信号計測方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009133734A (ja) * 2007-11-30 2009-06-18 Aisin Aw Co Ltd 施設情報表示装置、施設情報表示方法、施設情報表示プログラム
JP2011123519A (ja) * 2011-02-03 2011-06-23 Celsys:Kk マンガの表示方法およびマンガを表示する電子機器
US20130003052A1 (en) * 2010-01-29 2013-01-03 Toshiyuki Nakao Defect inspection device and defect inspection method
US20150153408A1 (en) * 2013-11-29 2015-06-04 Hamamatsu Photonics K.K. Apparatus for testing a semiconductor device and method of testing a semiconductor device
US20170019170A1 (en) * 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe
CN110691968A (zh) * 2017-06-02 2020-01-14 浜松光子学株式会社 半导体检查装置

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JPS57150209A (en) 1981-03-11 1982-09-17 Mitsubishi Electric Corp Automatic gain controlling circuit of optical signal
DE3334494A1 (de) 1983-09-23 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde
JPH0778462B2 (ja) * 1992-01-09 1995-08-23 光計測技術開発株式会社 光ファイバ測定装置
JP3280720B2 (ja) 1992-11-16 2002-05-13 松下電器産業株式会社 基板検査装置および基板検査方法
JP2710585B2 (ja) 1995-06-06 1998-02-10 株式会社明電舎 産業用マニプレータ
JP2000244417A (ja) 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
US6833913B1 (en) 2002-02-26 2004-12-21 Kla-Tencor Technologies Corporation Apparatus and methods for optically inspecting a sample for anomalies
US7616312B2 (en) * 2005-06-29 2009-11-10 Dcg Systems, Inc. Apparatus and method for probing integrated circuits using laser illumination
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
CN102472786B (zh) 2009-07-10 2014-09-03 日本电气株式会社 电磁场测量设备和电磁场测量方法
JP2012038805A (ja) 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP6407555B2 (ja) 2014-04-24 2018-10-17 浜松ホトニクス株式会社 画像生成装置及び画像生成方法
WO2015166910A1 (ja) 2014-04-28 2015-11-05 株式会社ニコン パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法
US10408874B2 (en) 2015-05-29 2019-09-10 Hamamatsu Photonics K.K. Light source device and inspection device
JP6714485B2 (ja) 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009133734A (ja) * 2007-11-30 2009-06-18 Aisin Aw Co Ltd 施設情報表示装置、施設情報表示方法、施設情報表示プログラム
US20130003052A1 (en) * 2010-01-29 2013-01-03 Toshiyuki Nakao Defect inspection device and defect inspection method
JP2011123519A (ja) * 2011-02-03 2011-06-23 Celsys:Kk マンガの表示方法およびマンガを表示する電子機器
US20150153408A1 (en) * 2013-11-29 2015-06-04 Hamamatsu Photonics K.K. Apparatus for testing a semiconductor device and method of testing a semiconductor device
US20170019170A1 (en) * 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe
CN110691968A (zh) * 2017-06-02 2020-01-14 浜松光子学株式会社 半导体检查装置

Also Published As

Publication number Publication date
JPWO2022064798A1 (https=) 2022-03-31
TW202212847A (zh) 2022-04-01
US12320842B2 (en) 2025-06-03
TWI901737B (zh) 2025-10-21
EP4213189A1 (en) 2023-07-19
WO2022064798A1 (ja) 2022-03-31
EP4213189B1 (en) 2026-03-04
KR20230070410A (ko) 2023-05-23
KR102799599B1 (ko) 2025-04-23
EP4213189A4 (en) 2024-09-18
US20240012047A1 (en) 2024-01-11
JP7608469B2 (ja) 2025-01-06

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