JP7608469B2 - 検査装置 - Google Patents

検査装置 Download PDF

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Publication number
JP7608469B2
JP7608469B2 JP2022551149A JP2022551149A JP7608469B2 JP 7608469 B2 JP7608469 B2 JP 7608469B2 JP 2022551149 A JP2022551149 A JP 2022551149A JP 2022551149 A JP2022551149 A JP 2022551149A JP 7608469 B2 JP7608469 B2 JP 7608469B2
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JP
Japan
Prior art keywords
light
optical
optical amplifier
photodetector
input
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JP2022551149A
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English (en)
Japanese (ja)
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JPWO2022064798A1 (https=
Inventor
共則 中村
哲人 内角
充哲 西沢
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication of JPWO2022064798A1 publication Critical patent/JPWO2022064798A1/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31708—Analysis of signal quality
    • G01R31/31709—Jitter measurements; Jitter generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2022551149A 2020-09-23 2021-06-25 検査装置 Active JP7608469B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020158395 2020-09-23
JP2020158395 2020-09-23
PCT/JP2021/024153 WO2022064798A1 (ja) 2020-09-23 2021-06-25 検査装置

Publications (2)

Publication Number Publication Date
JPWO2022064798A1 JPWO2022064798A1 (https=) 2022-03-31
JP7608469B2 true JP7608469B2 (ja) 2025-01-06

Family

ID=80845240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022551149A Active JP7608469B2 (ja) 2020-09-23 2021-06-25 検査装置

Country Status (7)

Country Link
US (1) US12320842B2 (https=)
EP (1) EP4213189B1 (https=)
JP (1) JP7608469B2 (https=)
KR (1) KR102799599B1 (https=)
CN (1) CN116195042A (https=)
TW (1) TWI901737B (https=)
WO (1) WO2022064798A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014220A (ja) * 2022-07-22 2024-02-01 国立研究開発法人産業技術総合研究所 高周波イメージング装置
WO2025089056A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 半導体検査装置及び半導体検査方法
WO2025089055A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 電気信号計測装置及び電気信号計測方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000244417A (ja) 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
US20070002329A1 (en) 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
JP2007064975A (ja) 2005-08-26 2007-03-15 Credence Systems Corp 変調マップ表示システム及び方法
WO2011004536A1 (ja) 2009-07-10 2011-01-13 日本電気株式会社 電磁界測定装置、該測定装置に用いられる電磁界測定方法及び電磁界測定制御プログラムが格納された非一時的なコンピュータ可読媒体
JP2011022148A (ja) 2002-02-26 2011-02-03 Kla-Tencor Corp 異常を発見するために試料を光学的に検査する装置
JP2012038805A (ja) 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP2015105851A (ja) 2013-11-29 2015-06-08 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
US20150309115A1 (en) 2014-04-24 2015-10-29 Hamamatsu Photonics K.K. Image generation apparatus and image generation method
US20170019170A1 (en) 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150209A (en) 1981-03-11 1982-09-17 Mitsubishi Electric Corp Automatic gain controlling circuit of optical signal
DE3334494A1 (de) 1983-09-23 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde
JPH0778462B2 (ja) * 1992-01-09 1995-08-23 光計測技術開発株式会社 光ファイバ測定装置
JP3280720B2 (ja) 1992-11-16 2002-05-13 松下電器産業株式会社 基板検査装置および基板検査方法
JP2710585B2 (ja) 1995-06-06 1998-02-10 株式会社明電舎 産業用マニプレータ
JP4983576B2 (ja) * 2007-11-30 2012-07-25 アイシン・エィ・ダブリュ株式会社 施設情報表示装置、施設情報表示方法、施設情報表示プログラム
JP5417205B2 (ja) * 2010-01-29 2014-02-12 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
JP5432933B2 (ja) * 2011-02-03 2014-03-05 株式会社セルシス マンガを表示する方法、プログラム、および電子機器
WO2015166910A1 (ja) 2014-04-28 2015-11-05 株式会社ニコン パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法
US10408874B2 (en) 2015-05-29 2019-09-10 Hamamatsu Photonics K.K. Light source device and inspection device
JP6714485B2 (ja) 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP6419893B1 (ja) * 2017-06-02 2018-11-07 浜松ホトニクス株式会社 半導体検査装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000244417A (ja) 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
JP2011022148A (ja) 2002-02-26 2011-02-03 Kla-Tencor Corp 異常を発見するために試料を光学的に検査する装置
US20070002329A1 (en) 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
JP2007064975A (ja) 2005-08-26 2007-03-15 Credence Systems Corp 変調マップ表示システム及び方法
WO2011004536A1 (ja) 2009-07-10 2011-01-13 日本電気株式会社 電磁界測定装置、該測定装置に用いられる電磁界測定方法及び電磁界測定制御プログラムが格納された非一時的なコンピュータ可読媒体
JP2012038805A (ja) 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP2015105851A (ja) 2013-11-29 2015-06-08 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
US20170019170A1 (en) 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe
US20150309115A1 (en) 2014-04-24 2015-10-29 Hamamatsu Photonics K.K. Image generation apparatus and image generation method

Also Published As

Publication number Publication date
JPWO2022064798A1 (https=) 2022-03-31
TW202212847A (zh) 2022-04-01
US12320842B2 (en) 2025-06-03
TWI901737B (zh) 2025-10-21
EP4213189A1 (en) 2023-07-19
WO2022064798A1 (ja) 2022-03-31
EP4213189B1 (en) 2026-03-04
CN116195042A (zh) 2023-05-30
KR20230070410A (ko) 2023-05-23
KR102799599B1 (ko) 2025-04-23
EP4213189A4 (en) 2024-09-18
US20240012047A1 (en) 2024-01-11

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