JPWO2022064798A1 - - Google Patents
Info
- Publication number
- JPWO2022064798A1 JPWO2022064798A1 JP2022551149A JP2022551149A JPWO2022064798A1 JP WO2022064798 A1 JPWO2022064798 A1 JP WO2022064798A1 JP 2022551149 A JP2022551149 A JP 2022551149A JP 2022551149 A JP2022551149 A JP 2022551149A JP WO2022064798 A1 JPWO2022064798 A1 JP WO2022064798A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31708—Analysis of signal quality
- G01R31/31709—Jitter measurements; Jitter generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020158395 | 2020-09-23 | ||
| JP2020158395 | 2020-09-23 | ||
| PCT/JP2021/024153 WO2022064798A1 (ja) | 2020-09-23 | 2021-06-25 | 検査装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064798A1 true JPWO2022064798A1 (https=) | 2022-03-31 |
| JP7608469B2 JP7608469B2 (ja) | 2025-01-06 |
Family
ID=80845240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551149A Active JP7608469B2 (ja) | 2020-09-23 | 2021-06-25 | 検査装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12320842B2 (https=) |
| EP (1) | EP4213189B1 (https=) |
| JP (1) | JP7608469B2 (https=) |
| KR (1) | KR102799599B1 (https=) |
| CN (1) | CN116195042A (https=) |
| TW (1) | TWI901737B (https=) |
| WO (1) | WO2022064798A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024014220A (ja) * | 2022-07-22 | 2024-02-01 | 国立研究開発法人産業技術総合研究所 | 高周波イメージング装置 |
| WO2025089056A1 (ja) | 2023-10-26 | 2025-05-01 | 浜松ホトニクス株式会社 | 半導体検査装置及び半導体検査方法 |
| WO2025089055A1 (ja) | 2023-10-26 | 2025-05-01 | 浜松ホトニクス株式会社 | 電気信号計測装置及び電気信号計測方法 |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57150209A (en) * | 1981-03-11 | 1982-09-17 | Mitsubishi Electric Corp | Automatic gain controlling circuit of optical signal |
| JPS6088441A (ja) * | 1983-09-23 | 1985-05-18 | シーメンス、アクチエンゲゼルシヤフト | 測定点の信号経過測定方法 |
| JPH06109584A (ja) * | 1992-01-09 | 1994-04-19 | Hikari Keisoku Gijutsu Kaihatsu Kk | 光ファイバ測定装置 |
| JPH06160035A (ja) * | 1992-11-16 | 1994-06-07 | Matsushita Electric Ind Co Ltd | 基板検査装置 |
| JP2000244417A (ja) * | 1999-02-22 | 2000-09-08 | Nec Eng Ltd | 光前置増幅器 |
| US20070002329A1 (en) * | 2005-06-29 | 2007-01-04 | Steven Kasapi | Laser probing system for integrated circuits |
| JP2007064975A (ja) * | 2005-08-26 | 2007-03-15 | Credence Systems Corp | 変調マップ表示システム及び方法 |
| WO2011004536A1 (ja) * | 2009-07-10 | 2011-01-13 | 日本電気株式会社 | 電磁界測定装置、該測定装置に用いられる電磁界測定方法及び電磁界測定制御プログラムが格納された非一時的なコンピュータ可読媒体 |
| JP2011022148A (ja) * | 2002-02-26 | 2011-02-03 | Kla-Tencor Corp | 異常を発見するために試料を光学的に検査する装置 |
| JP2012038805A (ja) * | 2010-08-04 | 2012-02-23 | Precise Gauges Co Ltd | 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置 |
| JP2015105851A (ja) * | 2013-11-29 | 2015-06-08 | 浜松ホトニクス株式会社 | 半導体デバイス計測装置及び半導体デバイス計測方法 |
| US20150309115A1 (en) * | 2014-04-24 | 2015-10-29 | Hamamatsu Photonics K.K. | Image generation apparatus and image generation method |
| US20170019170A1 (en) * | 2014-03-07 | 2017-01-19 | Keysight Technologies, Inc. | Dual-Directional Electro-Optic Probe |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710585B2 (ja) | 1995-06-06 | 1998-02-10 | 株式会社明電舎 | 産業用マニプレータ |
| JP4983576B2 (ja) * | 2007-11-30 | 2012-07-25 | アイシン・エィ・ダブリュ株式会社 | 施設情報表示装置、施設情報表示方法、施設情報表示プログラム |
| JP5417205B2 (ja) * | 2010-01-29 | 2014-02-12 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置及び欠陥検査方法 |
| JP5432933B2 (ja) * | 2011-02-03 | 2014-03-05 | 株式会社セルシス | マンガを表示する方法、プログラム、および電子機器 |
| WO2015166910A1 (ja) | 2014-04-28 | 2015-11-05 | 株式会社ニコン | パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法 |
| US10408874B2 (en) | 2015-05-29 | 2019-09-10 | Hamamatsu Photonics K.K. | Light source device and inspection device |
| JP6714485B2 (ja) | 2016-09-28 | 2020-06-24 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| JP6419893B1 (ja) * | 2017-06-02 | 2018-11-07 | 浜松ホトニクス株式会社 | 半導体検査装置 |
-
2021
- 2021-06-25 EP EP21871930.0A patent/EP4213189B1/en active Active
- 2021-06-25 WO PCT/JP2021/024153 patent/WO2022064798A1/ja not_active Ceased
- 2021-06-25 US US18/020,273 patent/US12320842B2/en active Active
- 2021-06-25 CN CN202180064713.2A patent/CN116195042A/zh active Pending
- 2021-06-25 JP JP2022551149A patent/JP7608469B2/ja active Active
- 2021-06-25 KR KR1020227043070A patent/KR102799599B1/ko active Active
- 2021-08-11 TW TW110129602A patent/TWI901737B/zh active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57150209A (en) * | 1981-03-11 | 1982-09-17 | Mitsubishi Electric Corp | Automatic gain controlling circuit of optical signal |
| JPS6088441A (ja) * | 1983-09-23 | 1985-05-18 | シーメンス、アクチエンゲゼルシヤフト | 測定点の信号経過測定方法 |
| JPH06109584A (ja) * | 1992-01-09 | 1994-04-19 | Hikari Keisoku Gijutsu Kaihatsu Kk | 光ファイバ測定装置 |
| JPH06160035A (ja) * | 1992-11-16 | 1994-06-07 | Matsushita Electric Ind Co Ltd | 基板検査装置 |
| JP2000244417A (ja) * | 1999-02-22 | 2000-09-08 | Nec Eng Ltd | 光前置増幅器 |
| JP2011022148A (ja) * | 2002-02-26 | 2011-02-03 | Kla-Tencor Corp | 異常を発見するために試料を光学的に検査する装置 |
| US20070002329A1 (en) * | 2005-06-29 | 2007-01-04 | Steven Kasapi | Laser probing system for integrated circuits |
| JP2007064975A (ja) * | 2005-08-26 | 2007-03-15 | Credence Systems Corp | 変調マップ表示システム及び方法 |
| WO2011004536A1 (ja) * | 2009-07-10 | 2011-01-13 | 日本電気株式会社 | 電磁界測定装置、該測定装置に用いられる電磁界測定方法及び電磁界測定制御プログラムが格納された非一時的なコンピュータ可読媒体 |
| JP2012038805A (ja) * | 2010-08-04 | 2012-02-23 | Precise Gauges Co Ltd | 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置 |
| JP2015105851A (ja) * | 2013-11-29 | 2015-06-08 | 浜松ホトニクス株式会社 | 半導体デバイス計測装置及び半導体デバイス計測方法 |
| US20170019170A1 (en) * | 2014-03-07 | 2017-01-19 | Keysight Technologies, Inc. | Dual-Directional Electro-Optic Probe |
| US20150309115A1 (en) * | 2014-04-24 | 2015-10-29 | Hamamatsu Photonics K.K. | Image generation apparatus and image generation method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202212847A (zh) | 2022-04-01 |
| US12320842B2 (en) | 2025-06-03 |
| TWI901737B (zh) | 2025-10-21 |
| EP4213189A1 (en) | 2023-07-19 |
| WO2022064798A1 (ja) | 2022-03-31 |
| EP4213189B1 (en) | 2026-03-04 |
| CN116195042A (zh) | 2023-05-30 |
| KR20230070410A (ko) | 2023-05-23 |
| KR102799599B1 (ko) | 2025-04-23 |
| EP4213189A4 (en) | 2024-09-18 |
| US20240012047A1 (en) | 2024-01-11 |
| JP7608469B2 (ja) | 2025-01-06 |
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