JPWO2022064798A1 - - Google Patents

Info

Publication number
JPWO2022064798A1
JPWO2022064798A1 JP2022551149A JP2022551149A JPWO2022064798A1 JP WO2022064798 A1 JPWO2022064798 A1 JP WO2022064798A1 JP 2022551149 A JP2022551149 A JP 2022551149A JP 2022551149 A JP2022551149 A JP 2022551149A JP WO2022064798 A1 JPWO2022064798 A1 JP WO2022064798A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022551149A
Other languages
Japanese (ja)
Other versions
JP7608469B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022064798A1 publication Critical patent/JPWO2022064798A1/ja
Application granted granted Critical
Publication of JP7608469B2 publication Critical patent/JP7608469B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31708Analysis of signal quality
    • G01R31/31709Jitter measurements; Jitter generators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2022551149A 2020-09-23 2021-06-25 検査装置 Active JP7608469B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020158395 2020-09-23
JP2020158395 2020-09-23
PCT/JP2021/024153 WO2022064798A1 (ja) 2020-09-23 2021-06-25 検査装置

Publications (2)

Publication Number Publication Date
JPWO2022064798A1 true JPWO2022064798A1 (https=) 2022-03-31
JP7608469B2 JP7608469B2 (ja) 2025-01-06

Family

ID=80845240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022551149A Active JP7608469B2 (ja) 2020-09-23 2021-06-25 検査装置

Country Status (7)

Country Link
US (1) US12320842B2 (https=)
EP (1) EP4213189B1 (https=)
JP (1) JP7608469B2 (https=)
KR (1) KR102799599B1 (https=)
CN (1) CN116195042A (https=)
TW (1) TWI901737B (https=)
WO (1) WO2022064798A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014220A (ja) * 2022-07-22 2024-02-01 国立研究開発法人産業技術総合研究所 高周波イメージング装置
WO2025089056A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 半導体検査装置及び半導体検査方法
WO2025089055A1 (ja) 2023-10-26 2025-05-01 浜松ホトニクス株式会社 電気信号計測装置及び電気信号計測方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150209A (en) * 1981-03-11 1982-09-17 Mitsubishi Electric Corp Automatic gain controlling circuit of optical signal
JPS6088441A (ja) * 1983-09-23 1985-05-18 シーメンス、アクチエンゲゼルシヤフト 測定点の信号経過測定方法
JPH06109584A (ja) * 1992-01-09 1994-04-19 Hikari Keisoku Gijutsu Kaihatsu Kk 光ファイバ測定装置
JPH06160035A (ja) * 1992-11-16 1994-06-07 Matsushita Electric Ind Co Ltd 基板検査装置
JP2000244417A (ja) * 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
US20070002329A1 (en) * 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
JP2007064975A (ja) * 2005-08-26 2007-03-15 Credence Systems Corp 変調マップ表示システム及び方法
WO2011004536A1 (ja) * 2009-07-10 2011-01-13 日本電気株式会社 電磁界測定装置、該測定装置に用いられる電磁界測定方法及び電磁界測定制御プログラムが格納された非一時的なコンピュータ可読媒体
JP2011022148A (ja) * 2002-02-26 2011-02-03 Kla-Tencor Corp 異常を発見するために試料を光学的に検査する装置
JP2012038805A (ja) * 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP2015105851A (ja) * 2013-11-29 2015-06-08 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
US20150309115A1 (en) * 2014-04-24 2015-10-29 Hamamatsu Photonics K.K. Image generation apparatus and image generation method
US20170019170A1 (en) * 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710585B2 (ja) 1995-06-06 1998-02-10 株式会社明電舎 産業用マニプレータ
JP4983576B2 (ja) * 2007-11-30 2012-07-25 アイシン・エィ・ダブリュ株式会社 施設情報表示装置、施設情報表示方法、施設情報表示プログラム
JP5417205B2 (ja) * 2010-01-29 2014-02-12 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
JP5432933B2 (ja) * 2011-02-03 2014-03-05 株式会社セルシス マンガを表示する方法、プログラム、および電子機器
WO2015166910A1 (ja) 2014-04-28 2015-11-05 株式会社ニコン パターン描画装置、パターン描画方法、デバイス製造方法、レーザ光源装置、ビーム走査装置、および、ビーム走査方法
US10408874B2 (en) 2015-05-29 2019-09-10 Hamamatsu Photonics K.K. Light source device and inspection device
JP6714485B2 (ja) 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP6419893B1 (ja) * 2017-06-02 2018-11-07 浜松ホトニクス株式会社 半導体検査装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150209A (en) * 1981-03-11 1982-09-17 Mitsubishi Electric Corp Automatic gain controlling circuit of optical signal
JPS6088441A (ja) * 1983-09-23 1985-05-18 シーメンス、アクチエンゲゼルシヤフト 測定点の信号経過測定方法
JPH06109584A (ja) * 1992-01-09 1994-04-19 Hikari Keisoku Gijutsu Kaihatsu Kk 光ファイバ測定装置
JPH06160035A (ja) * 1992-11-16 1994-06-07 Matsushita Electric Ind Co Ltd 基板検査装置
JP2000244417A (ja) * 1999-02-22 2000-09-08 Nec Eng Ltd 光前置増幅器
JP2011022148A (ja) * 2002-02-26 2011-02-03 Kla-Tencor Corp 異常を発見するために試料を光学的に検査する装置
US20070002329A1 (en) * 2005-06-29 2007-01-04 Steven Kasapi Laser probing system for integrated circuits
JP2007064975A (ja) * 2005-08-26 2007-03-15 Credence Systems Corp 変調マップ表示システム及び方法
WO2011004536A1 (ja) * 2009-07-10 2011-01-13 日本電気株式会社 電磁界測定装置、該測定装置に用いられる電磁界測定方法及び電磁界測定制御プログラムが格納された非一時的なコンピュータ可読媒体
JP2012038805A (ja) * 2010-08-04 2012-02-23 Precise Gauges Co Ltd 電界分布またはキャリア分布を高次高調波の強度に基づいて検出する検出装置
JP2015105851A (ja) * 2013-11-29 2015-06-08 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
US20170019170A1 (en) * 2014-03-07 2017-01-19 Keysight Technologies, Inc. Dual-Directional Electro-Optic Probe
US20150309115A1 (en) * 2014-04-24 2015-10-29 Hamamatsu Photonics K.K. Image generation apparatus and image generation method

Also Published As

Publication number Publication date
TW202212847A (zh) 2022-04-01
US12320842B2 (en) 2025-06-03
TWI901737B (zh) 2025-10-21
EP4213189A1 (en) 2023-07-19
WO2022064798A1 (ja) 2022-03-31
EP4213189B1 (en) 2026-03-04
CN116195042A (zh) 2023-05-30
KR20230070410A (ko) 2023-05-23
KR102799599B1 (ko) 2025-04-23
EP4213189A4 (en) 2024-09-18
US20240012047A1 (en) 2024-01-11
JP7608469B2 (ja) 2025-01-06

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
JPWO2022064798A1 (https=)
BR112022024743A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021015500A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021015450A8 (https=)
BR102021015220A2 (https=)
BR102021015247A2 (https=)
BR102021014056A2 (https=)
BR102021014044A2 (https=)
BR102021013929A2 (https=)
BR102021012571A2 (https=)
BR102021012230A2 (https=)
BR102021012003A2 (https=)
BR102021012107A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241118

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241218

R150 Certificate of patent or registration of utility model

Ref document number: 7608469

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150