TWI895010B - 基板處理系統及用於斜面蝕刻器的下電漿排除區域環 - Google Patents

基板處理系統及用於斜面蝕刻器的下電漿排除區域環

Info

Publication number
TWI895010B
TWI895010B TW113122265A TW113122265A TWI895010B TW I895010 B TWI895010 B TW I895010B TW 113122265 A TW113122265 A TW 113122265A TW 113122265 A TW113122265 A TW 113122265A TW I895010 B TWI895010 B TW I895010B
Authority
TW
Taiwan
Prior art keywords
substrate
exclusion zone
zone ring
plasma exclusion
processing system
Prior art date
Application number
TW113122265A
Other languages
English (en)
Chinese (zh)
Other versions
TW202439865A (zh
Inventor
基燦 金
陳巨剛
葛瑞格里 Ｓ 薩克士頓
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202439865A publication Critical patent/TW202439865A/zh
Application granted granted Critical
Publication of TWI895010B publication Critical patent/TWI895010B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • ing And Chemical Polishing (AREA)
TW113122265A 2018-10-18 2019-10-16 基板處理系統及用於斜面蝕刻器的下電漿排除區域環 TWI895010B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862747226P 2018-10-18 2018-10-18
US62/747,226 2018-10-18

Publications (2)

Publication Number Publication Date
TW202439865A TW202439865A (zh) 2024-10-01
TWI895010B true TWI895010B (zh) 2025-08-21

Family

ID=70283276

Family Applications (3)

Application Number Title Priority Date Filing Date
TW113122265A TWI895010B (zh) 2018-10-18 2019-10-16 基板處理系統及用於斜面蝕刻器的下電漿排除區域環
TW114127285A TW202602164A (zh) 2018-10-18 2019-10-16 基板處理系統及用於斜面蝕刻器的下電漿排除區域環
TW108137203A TWI848010B (zh) 2018-10-18 2019-10-16 用於斜面蝕刻器的下電漿排除區域環

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW114127285A TW202602164A (zh) 2018-10-18 2019-10-16 基板處理系統及用於斜面蝕刻器的下電漿排除區域環
TW108137203A TWI848010B (zh) 2018-10-18 2019-10-16 用於斜面蝕刻器的下電漿排除區域環

Country Status (7)

Country Link
US (2) US12387915B2 (https=)
JP (1) JP7539873B2 (https=)
KR (2) KR102910385B1 (https=)
CN (1) CN112913000B (https=)
SG (1) SG11202103648WA (https=)
TW (3) TWI895010B (https=)
WO (1) WO2020081644A1 (https=)

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KR102695443B1 (ko) * 2019-08-27 2024-08-16 삼성전자주식회사 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법
KR102327270B1 (ko) * 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
TWI787958B (zh) * 2021-08-18 2022-12-21 南韓商Ｐｓｋ有限公司 基板處理設備及基板處理方法
US12340987B2 (en) * 2022-05-12 2025-06-24 Taiwan Semiconductor Manufacturing Company Limited Tunable plasma exclusion zone in semiconductor fabrication
WO2024137297A1 (en) * 2022-12-20 2024-06-27 Lam Research Corporation Lower plasma exclusion zone ring for controlling plasma deposition or etching near a substrate notch
WO2025250574A1 (en) * 2024-05-31 2025-12-04 Lam Research Corporation Etch and deposition of substrate bevel edge region by tuning gas introduction via pez rings

Citations (2)

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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof

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KR100276736B1 (ko) * 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
KR20090044571A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 반도체 소자의 제조 장치 및 이를 이용한 반도체 소자의제조 방법
WO2009094558A2 (en) * 2008-01-24 2009-07-30 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US10099245B2 (en) * 2013-03-14 2018-10-16 Applied Materials, Inc. Process kit for deposition and etching
JP6853038B2 (ja) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
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US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
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JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof

Also Published As

Publication number Publication date
KR20210062094A (ko) 2021-05-28
JP7539873B2 (ja) 2024-08-26
TW202029844A (zh) 2020-08-01
TW202602164A (zh) 2026-01-01
SG11202103648WA (en) 2021-05-28
KR102910385B1 (ko) 2026-01-08
TW202439865A (zh) 2024-10-01
CN112913000A (zh) 2021-06-04
US20250364225A1 (en) 2025-11-27
CN112913000B (zh) 2026-01-06
US12387915B2 (en) 2025-08-12
US20210351018A1 (en) 2021-11-11
TWI848010B (zh) 2024-07-11
KR20260008213A (ko) 2026-01-15
JP2022502867A (ja) 2022-01-11
WO2020081644A1 (en) 2020-04-23

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