KR102910385B1 - 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링 - Google Patents

베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링

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Publication number
KR102910385B1
KR102910385B1 KR1020217014917A KR20217014917A KR102910385B1 KR 102910385 B1 KR102910385 B1 KR 102910385B1 KR 1020217014917 A KR1020217014917 A KR 1020217014917A KR 20217014917 A KR20217014917 A KR 20217014917A KR 102910385 B1 KR102910385 B1 KR 102910385B1
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KR
South Korea
Prior art keywords
substrate
paragraph
extending
exclusion zone
upwardly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020217014917A
Other languages
English (en)
Korean (ko)
Other versions
KR20210062094A (ko
Inventor
기찬 김
잭 첸
그레고리 에스. 섹스턴
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Priority to KR1020267000381A priority Critical patent/KR20260008213A/ko
Publication of KR20210062094A publication Critical patent/KR20210062094A/ko
Application granted granted Critical
Publication of KR102910385B1 publication Critical patent/KR102910385B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H01L21/68721—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01L21/3065—
    • H01L21/67069—
    • H01L21/6831—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • ing And Chemical Polishing (AREA)
KR1020217014917A 2018-10-18 2019-10-16 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링 Active KR102910385B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020267000381A KR20260008213A (ko) 2018-10-18 2019-10-16 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862747226P 2018-10-18 2018-10-18
US62/747,226 2018-10-18
PCT/US2019/056472 WO2020081644A1 (en) 2018-10-18 2019-10-16 Lower plasma exclusion zone ring for bevel etcher

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020267000381A Division KR20260008213A (ko) 2018-10-18 2019-10-16 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링

Publications (2)

Publication Number Publication Date
KR20210062094A KR20210062094A (ko) 2021-05-28
KR102910385B1 true KR102910385B1 (ko) 2026-01-08

Family

ID=70283276

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020217014917A Active KR102910385B1 (ko) 2018-10-18 2019-10-16 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링
KR1020267000381A Pending KR20260008213A (ko) 2018-10-18 2019-10-16 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020267000381A Pending KR20260008213A (ko) 2018-10-18 2019-10-16 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링

Country Status (7)

Country Link
US (2) US12387915B2 (https=)
JP (1) JP7539873B2 (https=)
KR (2) KR102910385B1 (https=)
CN (1) CN112913000B (https=)
SG (1) SG11202103648WA (https=)
TW (3) TWI895010B (https=)
WO (1) WO2020081644A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102695443B1 (ko) * 2019-08-27 2024-08-16 삼성전자주식회사 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법
KR102327270B1 (ko) * 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
TWI787958B (zh) * 2021-08-18 2022-12-21 南韓商Ｐｓｋ有限公司 基板處理設備及基板處理方法
US12340987B2 (en) * 2022-05-12 2025-06-24 Taiwan Semiconductor Manufacturing Company Limited Tunable plasma exclusion zone in semiconductor fabrication
WO2024137297A1 (en) * 2022-12-20 2024-06-27 Lam Research Corporation Lower plasma exclusion zone ring for controlling plasma deposition or etching near a substrate notch
WO2025250574A1 (en) * 2024-05-31 2025-12-04 Lam Research Corporation Etch and deposition of substrate bevel edge region by tuning gas introduction via pez rings

Citations (4)

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JP2003229408A (ja) * 2002-02-05 2003-08-15 Tokyo Electron Ltd プラズマ処理装置
US20110206833A1 (en) 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
KR101445416B1 (ko) 2007-01-26 2014-09-26 램 리써치 코포레이션 구성가능한 베벨 에처
JP2016195108A (ja) 2015-03-31 2016-11-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜した閉じ込めリングを有するプラズマ処理システム及びプラズマ処理構造

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KR100276736B1 (ko) * 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
KR20090044571A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 반도체 소자의 제조 장치 및 이를 이용한 반도체 소자의제조 방법
WO2009094558A2 (en) * 2008-01-24 2009-07-30 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US10099245B2 (en) * 2013-03-14 2018-10-16 Applied Materials, Inc. Process kit for deposition and etching
JP6853038B2 (ja) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
US9564285B2 (en) * 2013-07-15 2017-02-07 Lam Research Corporation Hybrid feature etching and bevel etching systems
US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US10276364B2 (en) * 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229408A (ja) * 2002-02-05 2003-08-15 Tokyo Electron Ltd プラズマ処理装置
KR101445416B1 (ko) 2007-01-26 2014-09-26 램 리써치 코포레이션 구성가능한 베벨 에처
US20110206833A1 (en) 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
JP2016195108A (ja) 2015-03-31 2016-11-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜した閉じ込めリングを有するプラズマ処理システム及びプラズマ処理構造

Also Published As

Publication number Publication date
KR20210062094A (ko) 2021-05-28
JP7539873B2 (ja) 2024-08-26
TW202029844A (zh) 2020-08-01
TW202602164A (zh) 2026-01-01
SG11202103648WA (en) 2021-05-28
TWI895010B (zh) 2025-08-21
TW202439865A (zh) 2024-10-01
CN112913000A (zh) 2021-06-04
US20250364225A1 (en) 2025-11-27
CN112913000B (zh) 2026-01-06
US12387915B2 (en) 2025-08-12
US20210351018A1 (en) 2021-11-11
TWI848010B (zh) 2024-07-11
KR20260008213A (ko) 2026-01-15
JP2022502867A (ja) 2022-01-11
WO2020081644A1 (en) 2020-04-23

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