JP7539873B2 - ベベルエッチャ用の下側プラズマ排除区域リング - Google Patents

ベベルエッチャ用の下側プラズマ排除区域リング Download PDF

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Publication number
JP7539873B2
JP7539873B2 JP2021520122A JP2021520122A JP7539873B2 JP 7539873 B2 JP7539873 B2 JP 7539873B2 JP 2021520122 A JP2021520122 A JP 2021520122A JP 2021520122 A JP2021520122 A JP 2021520122A JP 7539873 B2 JP7539873 B2 JP 7539873B2
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Prior art keywords
substrate
exclusion zone
lower plasma
zone ring
upwardly
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Japanese (ja)
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JP2022502867A5 (https=
JP2022502867A (ja
Inventor
キム・キーチャン
チェン・ジャック
セクストン・グレゴリー・エス．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • ing And Chemical Polishing (AREA)
JP2021520122A 2018-10-18 2019-10-16 ベベルエッチャ用の下側プラズマ排除区域リング Active JP7539873B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862747226P 2018-10-18 2018-10-18
US62/747,226 2018-10-18
PCT/US2019/056472 WO2020081644A1 (en) 2018-10-18 2019-10-16 Lower plasma exclusion zone ring for bevel etcher

Publications (3)

Publication Number Publication Date
JP2022502867A JP2022502867A (ja) 2022-01-11
JP2022502867A5 JP2022502867A5 (https=) 2022-10-24
JP7539873B2 true JP7539873B2 (ja) 2024-08-26

Family

ID=70283276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021520122A Active JP7539873B2 (ja) 2018-10-18 2019-10-16 ベベルエッチャ用の下側プラズマ排除区域リング

Country Status (7)

Country Link
US (2) US12387915B2 (https=)
JP (1) JP7539873B2 (https=)
KR (2) KR102910385B1 (https=)
CN (1) CN112913000B (https=)
SG (1) SG11202103648WA (https=)
TW (3) TWI895010B (https=)
WO (1) WO2020081644A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102695443B1 (ko) * 2019-08-27 2024-08-16 삼성전자주식회사 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법
KR102327270B1 (ko) * 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
TWI787958B (zh) * 2021-08-18 2022-12-21 南韓商Ｐｓｋ有限公司 基板處理設備及基板處理方法
US12340987B2 (en) * 2022-05-12 2025-06-24 Taiwan Semiconductor Manufacturing Company Limited Tunable plasma exclusion zone in semiconductor fabrication
WO2024137297A1 (en) * 2022-12-20 2024-06-27 Lam Research Corporation Lower plasma exclusion zone ring for controlling plasma deposition or etching near a substrate notch
WO2025250574A1 (en) * 2024-05-31 2025-12-04 Lam Research Corporation Etch and deposition of substrate bevel edge region by tuning gas introduction via pez rings

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229408A (ja) 2002-02-05 2003-08-15 Tokyo Electron Ltd プラズマ処理装置
JP3168689U (ja) 2010-02-22 2011-06-23 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマベベルエッチング装置の延長電極

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100276736B1 (ko) * 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
KR20090044571A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 반도체 소자의 제조 장치 및 이를 이용한 반도체 소자의제조 방법
WO2009094558A2 (en) * 2008-01-24 2009-07-30 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US10099245B2 (en) * 2013-03-14 2018-10-16 Applied Materials, Inc. Process kit for deposition and etching
JP6853038B2 (ja) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
US9564285B2 (en) * 2013-07-15 2017-02-07 Lam Research Corporation Hybrid feature etching and bevel etching systems
US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US10276364B2 (en) * 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229408A (ja) 2002-02-05 2003-08-15 Tokyo Electron Ltd プラズマ処理装置
JP3168689U (ja) 2010-02-22 2011-06-23 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマベベルエッチング装置の延長電極

Also Published As

Publication number Publication date
KR20210062094A (ko) 2021-05-28
TW202029844A (zh) 2020-08-01
TW202602164A (zh) 2026-01-01
SG11202103648WA (en) 2021-05-28
TWI895010B (zh) 2025-08-21
KR102910385B1 (ko) 2026-01-08
TW202439865A (zh) 2024-10-01
CN112913000A (zh) 2021-06-04
US20250364225A1 (en) 2025-11-27
CN112913000B (zh) 2026-01-06
US12387915B2 (en) 2025-08-12
US20210351018A1 (en) 2021-11-11
TWI848010B (zh) 2024-07-11
KR20260008213A (ko) 2026-01-15
JP2022502867A (ja) 2022-01-11
WO2020081644A1 (en) 2020-04-23

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