JP2022502867A5 - - Google Patents

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Publication number
JP2022502867A5
JP2022502867A5 JP2021520122A JP2021520122A JP2022502867A5 JP 2022502867 A5 JP2022502867 A5 JP 2022502867A5 JP 2021520122 A JP2021520122 A JP 2021520122A JP 2021520122 A JP2021520122 A JP 2021520122A JP 2022502867 A5 JP2022502867 A5 JP 2022502867A5
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JP
Japan
Prior art keywords
substrate
lower plasma
exclusion zone
plasma exclusion
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021520122A
Other languages
English (en)
Japanese (ja)
Other versions
JP7539873B2 (ja
JP2022502867A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/056472 external-priority patent/WO2020081644A1/en
Publication of JP2022502867A publication Critical patent/JP2022502867A/ja
Publication of JP2022502867A5 publication Critical patent/JP2022502867A5/ja
Application granted granted Critical
Publication of JP7539873B2 publication Critical patent/JP7539873B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021520122A 2018-10-18 2019-10-16 ベベルエッチャ用の下側プラズマ排除区域リング Active JP7539873B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862747226P 2018-10-18 2018-10-18
US62/747,226 2018-10-18
PCT/US2019/056472 WO2020081644A1 (en) 2018-10-18 2019-10-16 Lower plasma exclusion zone ring for bevel etcher

Publications (3)

Publication Number Publication Date
JP2022502867A JP2022502867A (ja) 2022-01-11
JP2022502867A5 true JP2022502867A5 (https=) 2022-10-24
JP7539873B2 JP7539873B2 (ja) 2024-08-26

Family

ID=70283276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021520122A Active JP7539873B2 (ja) 2018-10-18 2019-10-16 ベベルエッチャ用の下側プラズマ排除区域リング

Country Status (7)

Country Link
US (2) US12387915B2 (https=)
JP (1) JP7539873B2 (https=)
KR (2) KR102910385B1 (https=)
CN (1) CN112913000B (https=)
SG (1) SG11202103648WA (https=)
TW (3) TWI895010B (https=)
WO (1) WO2020081644A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102695443B1 (ko) * 2019-08-27 2024-08-16 삼성전자주식회사 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법
KR102327270B1 (ko) * 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
TWI787958B (zh) * 2021-08-18 2022-12-21 南韓商Ｐｓｋ有限公司 基板處理設備及基板處理方法
US12340987B2 (en) * 2022-05-12 2025-06-24 Taiwan Semiconductor Manufacturing Company Limited Tunable plasma exclusion zone in semiconductor fabrication
WO2024137297A1 (en) * 2022-12-20 2024-06-27 Lam Research Corporation Lower plasma exclusion zone ring for controlling plasma deposition or etching near a substrate notch
WO2025250574A1 (en) * 2024-05-31 2025-12-04 Lam Research Corporation Etch and deposition of substrate bevel edge region by tuning gas introduction via pez rings

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KR100276736B1 (ko) * 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
KR20090044571A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 반도체 소자의 제조 장치 및 이를 이용한 반도체 소자의제조 방법
WO2009094558A2 (en) * 2008-01-24 2009-07-30 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
US20110206833A1 (en) 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US10099245B2 (en) * 2013-03-14 2018-10-16 Applied Materials, Inc. Process kit for deposition and etching
JP6853038B2 (ja) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
US9564285B2 (en) * 2013-07-15 2017-02-07 Lam Research Corporation Hybrid feature etching and bevel etching systems
US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US10276364B2 (en) * 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control

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