CN112913000B - 用于斜面蚀刻器的下等离子体排除区域环 - Google Patents

用于斜面蚀刻器的下等离子体排除区域环

Info

Publication number
CN112913000B
CN112913000B CN201980068405.XA CN201980068405A CN112913000B CN 112913000 B CN112913000 B CN 112913000B CN 201980068405 A CN201980068405 A CN 201980068405A CN 112913000 B CN112913000 B CN 112913000B
Authority
CN
China
Prior art keywords
substrate
ring
lower plasma
plasma exclusion
annular step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980068405.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN112913000A (zh
Inventor
金基灿
杰克·陈
格雷戈里·S·塞克斯顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN112913000A publication Critical patent/CN112913000A/zh
Application granted granted Critical
Publication of CN112913000B publication Critical patent/CN112913000B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • ing And Chemical Polishing (AREA)
CN201980068405.XA 2018-10-18 2019-10-16 用于斜面蚀刻器的下等离子体排除区域环 Active CN112913000B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862747226P 2018-10-18 2018-10-18
US62/747,226 2018-10-18
PCT/US2019/056472 WO2020081644A1 (en) 2018-10-18 2019-10-16 Lower plasma exclusion zone ring for bevel etcher

Publications (2)

Publication Number Publication Date
CN112913000A CN112913000A (zh) 2021-06-04
CN112913000B true CN112913000B (zh) 2026-01-06

Family

ID=70283276

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980068405.XA Active CN112913000B (zh) 2018-10-18 2019-10-16 用于斜面蚀刻器的下等离子体排除区域环

Country Status (7)

Country Link
US (2) US12387915B2 (https=)
JP (1) JP7539873B2 (https=)
KR (2) KR102910385B1 (https=)
CN (1) CN112913000B (https=)
SG (1) SG11202103648WA (https=)
TW (3) TWI895010B (https=)
WO (1) WO2020081644A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102695443B1 (ko) * 2019-08-27 2024-08-16 삼성전자주식회사 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법
KR102327270B1 (ko) * 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
TWI787958B (zh) * 2021-08-18 2022-12-21 南韓商Ｐｓｋ有限公司 基板處理設備及基板處理方法
US12340987B2 (en) * 2022-05-12 2025-06-24 Taiwan Semiconductor Manufacturing Company Limited Tunable plasma exclusion zone in semiconductor fabrication
WO2024137297A1 (en) * 2022-12-20 2024-06-27 Lam Research Corporation Lower plasma exclusion zone ring for controlling plasma deposition or etching near a substrate notch
WO2025250574A1 (en) * 2024-05-31 2025-12-04 Lam Research Corporation Etch and deposition of substrate bevel edge region by tuning gas introduction via pez rings

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
CN202221752U (zh) * 2010-02-22 2012-05-16 朗姆研究公司 延伸电极及含有其的等离子体斜面蚀刻设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
KR20090044571A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 반도체 소자의 제조 장치 및 이를 이용한 반도체 소자의제조 방법
WO2009094558A2 (en) * 2008-01-24 2009-07-30 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US10099245B2 (en) * 2013-03-14 2018-10-16 Applied Materials, Inc. Process kit for deposition and etching
JP6853038B2 (ja) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
US9564285B2 (en) * 2013-07-15 2017-02-07 Lam Research Corporation Hybrid feature etching and bevel etching systems
US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US10276364B2 (en) * 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
CN202221752U (zh) * 2010-02-22 2012-05-16 朗姆研究公司 延伸电极及含有其的等离子体斜面蚀刻设备

Also Published As

Publication number Publication date
KR20210062094A (ko) 2021-05-28
JP7539873B2 (ja) 2024-08-26
TW202029844A (zh) 2020-08-01
TW202602164A (zh) 2026-01-01
SG11202103648WA (en) 2021-05-28
TWI895010B (zh) 2025-08-21
KR102910385B1 (ko) 2026-01-08
TW202439865A (zh) 2024-10-01
CN112913000A (zh) 2021-06-04
US20250364225A1 (en) 2025-11-27
US12387915B2 (en) 2025-08-12
US20210351018A1 (en) 2021-11-11
TWI848010B (zh) 2024-07-11
KR20260008213A (ko) 2026-01-15
JP2022502867A (ja) 2022-01-11
WO2020081644A1 (en) 2020-04-23

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