TWI865492B - 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法 Download PDF

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Publication number
TWI865492B
TWI865492B TW109106009A TW109106009A TWI865492B TW I865492 B TWI865492 B TW I865492B TW 109106009 A TW109106009 A TW 109106009A TW 109106009 A TW109106009 A TW 109106009A TW I865492 B TWI865492 B TW I865492B
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TW
Taiwan
Prior art keywords
film
buffer layer
etching
reflective
absorber
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TW109106009A
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English (en)
Chinese (zh)
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TW202038001A (zh
Inventor
笑喜勉
池邊洋平
Original Assignee
日商Ｈｏｙａ股份有限公司
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW109106009A 2019-02-28 2020-02-25 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法 TWI865492B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019035300 2019-02-28
JP2019-035300 2019-02-28

Publications (2)

Publication Number Publication Date
TW202038001A TW202038001A (zh) 2020-10-16
TWI865492B true TWI865492B (zh) 2024-12-11

Family

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Family Applications (1)

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TW109106009A TWI865492B (zh) 2019-02-28 2020-02-25 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US20220121102A1 (https=)
JP (2) JP7018162B2 (https=)
KR (1) KR20210126592A (https=)
SG (1) SG11202109240PA (https=)
TW (1) TWI865492B (https=)
WO (1) WO2020175354A1 (https=)

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US11619875B2 (en) * 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
KR20250012736A (ko) * 2020-12-03 2025-01-24 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
JP7581107B2 (ja) * 2021-03-29 2024-11-12 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法
US12535740B2 (en) * 2021-07-09 2026-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Interstitial type absorber for extreme ultraviolet mask
DE102022202061B4 (de) * 2022-03-01 2025-07-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zur maskenreparatur
JP7506114B2 (ja) * 2022-07-01 2024-06-25 アルバック成膜株式会社 マスクブランクスの製造方法及びマスクブランクス、フォトマスク
KR20250053862A (ko) 2022-08-30 2025-04-22 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
KR102851718B1 (ko) 2022-10-13 2025-09-02 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JPWO2024247713A1 (https=) * 2023-05-31 2024-12-05

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US20040009408A1 (en) * 2002-07-10 2004-01-15 International Business Machines Corporation EUVL mask structure and method of formation
US20080318139A1 (en) * 2007-06-22 2008-12-25 Advanced Mask Technology Center Gmbh & Co. Kg Mask Blank, Photomask and Method of Manufacturing a Photomask
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TW201843521A (zh) * 2017-05-04 2018-12-16 台灣積體電路製造股份有限公司 光罩的製造方法

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US20030162104A1 (en) * 2002-02-22 2003-08-28 Hoya Corporation Reflective-type mask blank for exposure, method of producing the same, and reflective-type mask for exposure
US20040009408A1 (en) * 2002-07-10 2004-01-15 International Business Machines Corporation EUVL mask structure and method of formation
US20080318139A1 (en) * 2007-06-22 2008-12-25 Advanced Mask Technology Center Gmbh & Co. Kg Mask Blank, Photomask and Method of Manufacturing a Photomask
TWI490633B (zh) * 2012-08-01 2015-07-01 Taiwan Semiconductor Mfg Co Ltd 極紫外線光罩的形成方法
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Also Published As

Publication number Publication date
JP7018162B2 (ja) 2022-02-09
JP7268211B2 (ja) 2023-05-02
WO2020175354A1 (ja) 2020-09-03
SG11202109240PA (en) 2021-09-29
TW202038001A (zh) 2020-10-16
KR20210126592A (ko) 2021-10-20
JP2022064956A (ja) 2022-04-26
US20220121102A1 (en) 2022-04-21
JPWO2020175354A1 (ja) 2021-12-23

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