JP7018162B2 - 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 Download PDF

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JP7018162B2
JP7018162B2 JP2021502175A JP2021502175A JP7018162B2 JP 7018162 B2 JP7018162 B2 JP 7018162B2 JP 2021502175 A JP2021502175 A JP 2021502175A JP 2021502175 A JP2021502175 A JP 2021502175A JP 7018162 B2 JP7018162 B2 JP 7018162B2
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film
buffer layer
reflective mask
absorber
etching
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JPWO2020175354A1 (ja
Inventor
勉 笑喜
洋平 池邊
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2021502175A 2019-02-28 2020-02-21 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 Active JP7018162B2 (ja)

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JP2022011849A JP7268211B2 (ja) 2019-02-28 2022-01-28 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019035300 2019-02-28
JP2019035300 2019-02-28
PCT/JP2020/007002 WO2020175354A1 (ja) 2019-02-28 2020-02-21 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

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JPWO2020175354A1 JPWO2020175354A1 (ja) 2021-12-23
JP7018162B2 true JP7018162B2 (ja) 2022-02-09

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JP2022011849A Active JP7268211B2 (ja) 2019-02-28 2022-01-28 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

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Country Link
US (1) US20220121102A1 (https=)
JP (2) JP7018162B2 (https=)
KR (1) KR20210126592A (https=)
SG (1) SG11202109240PA (https=)
TW (1) TWI865492B (https=)
WO (1) WO2020175354A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11619875B2 (en) * 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
KR20250012736A (ko) * 2020-12-03 2025-01-24 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
JP7581107B2 (ja) * 2021-03-29 2024-11-12 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法
US12535740B2 (en) * 2021-07-09 2026-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Interstitial type absorber for extreme ultraviolet mask
DE102022202061B4 (de) * 2022-03-01 2025-07-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zur maskenreparatur
JP7506114B2 (ja) * 2022-07-01 2024-06-25 アルバック成膜株式会社 マスクブランクスの製造方法及びマスクブランクス、フォトマスク
KR20250053862A (ko) 2022-08-30 2025-04-22 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
KR102851718B1 (ko) 2022-10-13 2025-09-02 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JPWO2024247713A1 (https=) * 2023-05-31 2024-12-05

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273678A (ja) 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2011151202A (ja) 2010-01-21 2011-08-04 Dainippon Printing Co Ltd 遮光枠を有する反射型マスクおよびその製造方法
JP2011176127A (ja) 2010-02-24 2011-09-08 Dainippon Printing Co Ltd 反射型マスクおよびその製造方法
JP2015103810A (ja) 2013-11-22 2015-06-04 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 極端紫外線リソグラフィプロセスおよび低減されたシャドウ効果および向上した強度を有するマスク
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3989367B2 (ja) * 2002-02-22 2007-10-10 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
US6777137B2 (en) * 2002-07-10 2004-08-17 International Business Machines Corporation EUVL mask structure and method of formation
US20060115744A1 (en) * 2004-08-06 2006-06-01 Lutz Aschke Method of producing a mask blank for photolithographic applications, and mask blank
DE102005027697A1 (de) * 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
DE102007028800B4 (de) * 2007-06-22 2016-11-03 Advanced Mask Technology Center Gmbh & Co. Kg Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske
JP4602430B2 (ja) 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
WO2009122972A1 (ja) 2008-03-31 2009-10-08 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法
WO2010007955A1 (ja) * 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
JP2011187746A (ja) * 2010-03-09 2011-09-22 Dainippon Printing Co Ltd 反射型マスクブランクス、反射型マスク、およびその製造方法
US8679707B2 (en) * 2012-08-01 2014-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a lithography mask
KR102219307B1 (ko) * 2013-02-22 2021-02-23 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
JP6287099B2 (ja) * 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP6301127B2 (ja) * 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP6425951B2 (ja) * 2014-09-17 2018-11-21 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP6855190B2 (ja) * 2016-08-26 2021-04-07 Hoya株式会社 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法
CN106169416B (zh) * 2016-08-29 2019-11-12 复旦大学 一种极紫外掩模的制造方法
US10838295B2 (en) * 2017-05-04 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273678A (ja) 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2011151202A (ja) 2010-01-21 2011-08-04 Dainippon Printing Co Ltd 遮光枠を有する反射型マスクおよびその製造方法
JP2011176127A (ja) 2010-02-24 2011-09-08 Dainippon Printing Co Ltd 反射型マスクおよびその製造方法
JP2015103810A (ja) 2013-11-22 2015-06-04 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 極端紫外線リソグラフィプロセスおよび低減されたシャドウ効果および向上した強度を有するマスク
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

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JP7268211B2 (ja) 2023-05-02
WO2020175354A1 (ja) 2020-09-03
SG11202109240PA (en) 2021-09-29
TWI865492B (zh) 2024-12-11
TW202038001A (zh) 2020-10-16
KR20210126592A (ko) 2021-10-20
JP2022064956A (ja) 2022-04-26
US20220121102A1 (en) 2022-04-21
JPWO2020175354A1 (ja) 2021-12-23

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