WO2009122972A1 - 反射型マスクブランク、反射型マスク及びその製造方法 - Google Patents
反射型マスクブランク、反射型マスク及びその製造方法 Download PDFInfo
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- WO2009122972A1 WO2009122972A1 PCT/JP2009/055859 JP2009055859W WO2009122972A1 WO 2009122972 A1 WO2009122972 A1 WO 2009122972A1 JP 2009055859 W JP2009055859 W JP 2009055859W WO 2009122972 A1 WO2009122972 A1 WO 2009122972A1
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- layer
- film
- reflective mask
- reflective
- mask blank
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title description 39
- 230000010363 phase shift Effects 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000010521 absorption reaction Methods 0.000 claims abstract description 14
- 239000006096 absorbing agent Substances 0.000 claims description 124
- 238000012546 transfer Methods 0.000 claims description 83
- 238000005530 etching Methods 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 57
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 33
- 238000001312 dry etching Methods 0.000 claims description 21
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 15
- 239000011651 chromium Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 317
- 239000010410 layer Substances 0.000 description 282
- 239000007789 gas Substances 0.000 description 48
- 239000000460 chlorine Substances 0.000 description 26
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 24
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 17
- 229910052801 chlorine Inorganic materials 0.000 description 17
- 238000001755 magnetron sputter deposition Methods 0.000 description 17
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 16
- 239000011521 glass Substances 0.000 description 14
- 238000007689 inspection Methods 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
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- 230000003287 optical effect Effects 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 7
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- SLYSCVGKSGZCPI-UHFFFAOYSA-N [B]=O.[Ta] Chemical compound [B]=O.[Ta] SLYSCVGKSGZCPI-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- -1 Si 3 N 4 Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910019887 RuMo Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Definitions
- the present invention relates to a reflective mask blank and a reflective mask. More specifically, the present invention relates to a reflective mask blank suitable for a reflective mask used in a lithography method using exposure light in a short wavelength region such as extreme ultraviolet light, and a reflection formed by using the reflective mask blank. It relates to a type mask.
- EUV lithography which is an exposure technique using extreme ultraviolet light (Extreme Ultra Violet; hereinafter referred to as EUV light) with a shorter wavelength
- EUV light refers to light in the wavelength band of the soft X-ray region or the vacuum ultraviolet region, and specifically refers to light having a wavelength of about 0.2 to 100 nm.
- a reflective mask as described in Japanese Patent Laid-Open No. 8-213303 (Patent Document 1) has been proposed.
- This reflective mask has a multilayer reflective film that reflects EUV light as exposure light on a substrate, and further has an absorber film that absorbs EUV light in a pattern on the multilayer reflective film. ing.
- pattern transfer is performed using an exposure machine (pattern transfer device) equipped with such a reflective mask, the exposure light incident on the reflective mask is absorbed at a portion where the absorber film pattern is present, and the absorber film pattern. In a portion where there is no light, the light reflected by the multilayer reflective film is transferred to, for example, a semiconductor substrate (a silicon wafer with a resist) through a reflective optical system.
- phase shift mask for example, Japanese Examined Patent Publication No. 62-50811 (Patent Document 2)
- the transmission part of the mask pattern is made of a material or shape different from that of the adjacent transmission part, thereby giving a phase difference of 180 degrees to the light transmitted through the mask part. Therefore, in the region between the two transmission parts, transmitted diffracted lights having different phases by 180 degrees cancel each other, the light intensity becomes extremely small, the mask contrast is improved, and as a result, the depth of focus at the time of transfer is increased and the transfer is performed. Accuracy is improved.
- the phase difference is preferably 180 degrees, but if it is substantially about 175 to 185 degrees, the effect of improving the resolution can be obtained.
- Halftone masks which are a type of phase shift mask, use a light-absorbing thin film as a material constituting the mask pattern, and reduce the transmittance to several percent (usually about 5 to 20%) while reducing the transmittance to a normal substrate. It is a phase shift mask that improves the resolution of the pattern edge portion by giving a phase difference of 180 degrees to transmitted light.
- an ArF excimer laser (wavelength 193 nm) is being switched from the KrF excimer laser (wavelength 248 nm) that has been used so far.
- EUV exposure that makes it possible to apply the principle of a halftone mask used in conventional excimer laser exposure or the like to EUV lithography using a reflective optical system.
- Masks have been proposed (for example, Japanese Patent Application Laid-Open No. 2004-207593 (Patent Document 3)).
- JP-A-8-213303 Japanese Examined Patent Publication No. 62-50811 JP 2004-207593 A
- FIG. 6A is a cross-sectional view and a plan view of an associated EUV exposure mask.
- a multilayer film 111 serving as a high reflection region of exposure light is formed on a substrate 110, and a low reflection layer 112 serving as a low reflection region is formed on the multilayer film 111.
- a pattern is formed.
- the low reflection layer 112 is formed of a two-layer film, and enters the low reflection layer 112 when the exposure wavelength is based on the reflectance when the exposure light is directly incident on the multilayer film 111 at the exposure wavelength.
- the reflectance is 5 to 20%, and the phase difference between the reflected light from the low reflective layer 112 and the reflected light from the multilayer film 111 is 175 to 185 degrees.
- An EUV exposure mask having such a configuration makes it possible to apply the principle of a halftone mask used in conventional excimer laser exposure, etc., to EUV exposure and reflection optical systems. An EUV exposure mask with improved image quality can be realized.
- a single subject on which a resist film is formed is exposed multiple times using the same photomask while shifting the position. A plurality of the same patterns are transferred.
- the transfer area 114 the exposure light emitted from the light source in the exposure apparatus is incident only on the portion of the photomask surface where the pattern 113 to be transferred is formed (hereinafter referred to as the transfer area 114).
- the mechanism is adjusted by the optical system in the device.
- leaked light a part of the exposure light leaks (this is referred to as leaked light) and enters the outer periphery of the transfer area 114 (hereinafter referred to as this).
- the outer peripheral area exposed by the leaked light is referred to as a leaked light area 116). Therefore, as shown in FIG. 6A, not only the area of the transfer area 114 but also the area including the leakage light area 116 is transferred to the resist film of the subject.
- a transfer area on the subject is used as shown in FIG. 6B in order to use the subject most effectively.
- 114 transfer patterns 113 are transferred with almost no gap. (See transfer patterns 113A, 113B, 113C, 113D, etc. in FIG. 6B).
- the leakage light area 116B of the transfer pattern 113B overlaps a part of the transfer pattern 113A. Further, the leakage light area 116A of the transfer pattern 113A overlaps with a part of the transfer pattern 113B.
- a reflective mask of a type that absorbs EUV exposure light by the absorber film 112 even if the EUV exposure light leaks to the leak light area 116, the absorber film 112 absorbs the EUV exposure light, and the absorber Since reflected light having an intensity for exposing the resist film on the subject of the film 112 is not generated from the leakage light area 116, there is no particular problem.
- a light-shielding band is provided in the blind area 115 that is the outer peripheral area of the transfer area 114 including the leakage light area 116, and the adjacent pattern is affected when exposure is performed. It is common not to give.
- the absorber film transmits the EUV exposure light with a predetermined transmittance, so that reflected light is also generated from the leakage light area 116. For this reason, when the transfer pattern 113 and the leakage light area 116 overlap on the subject, there is a problem that the resist film on the subject is unintentionally exposed.
- the transfer pattern transferred onto the subject by the first exposure is 113A and transferred by the second exposure.
- the transferred pattern is sequentially exposed, such as 113B, the transferred pattern transferred by the third exposure 113C, the transferred pattern 113C transferred by the fourth exposure, and 113D.
- the low reflection portion (the portion where the resist film on the subject is not exposed) where the absorber film 112 of the transfer pattern remains overlaps the leaked light area 116 where the absorber film 112 remains.
- a part 120 where two exposures overlap, a part 121 where three exposures overlap, and a part 122 where four exposures overlap occur in the resist film on the subject.
- the reflectance is about 70%
- the resist film on the subject has a reflected light amount of 70%.
- the amount of light of the EUV light source is adjusted so that it is exposed to light. For example, when a reflective mask having a reflectivity of about 20% when reflected by the multilayer reflective film 111 via the absorber film 112 is used, a resist film on the subject is formed in a portion 120 where two exposures overlap. Is exposed to EUV light having a light amount corresponding to a reflectance of approximately 40%, and there is a possibility that a portion of the resist film that should not be exposed is exposed.
- the resist film on the subject is exposed with EUV light having a light amount corresponding to a reflectance of approximately 60%
- the resist on the subject is exposed.
- the film is exposed to EUV light having a light amount corresponding to a reflectance of approximately 80%, and there is a high possibility that the resist film in a portion that should not be exposed is exposed.
- an object of the present invention is to provide an EUV exposure mask and a mask blank for manufacturing the mask so that even if the transfer pattern is transferred without a gap, the resist in the overlapping portion is not exposed.
- the present inventors provide an absorber layer in the blind area of the reflective mask, and set the reflectance of the absorber layer in the blind area to be higher than the reflectance of the phase shift layer in the transfer pattern area. I thought to make it lower.
- a reflective mask blank includes a substrate, a multilayer reflective film having a structure in which a high refractive index layer and a low refractive index layer are alternately stacked, and the multilayer reflective film formed on the substrate.
- a reflective mask blank comprising an absorption film that absorbs EUV exposure light laminated thereon, wherein the absorption film is directly applied to EUV exposure light that passes through the layer and is reflected by the multilayer reflective film.
- a phase shift layer that generates a predetermined phase difference with respect to EUV exposure light that is incident and reflected by the multilayer reflective film, and is laminated on the phase shift layer, either alone or together with the phase shift layer.
- an absorber layer for absorbing and attenuating EUV exposure light passing through the substrate.
- the phase shift layer is made of a material mainly composed of tantalum. Further, it is preferable that the phase shift layer includes a semi-transmissive layer and an antireflection layer, and it is preferable that the semi-transmissive layer is made of a material containing tantalum nitride as a main component. Furthermore, it is preferable that the antireflection layer is made of a material mainly composed of tantalum oxide.
- the absorber layer is made of a material resistant to an etching gas for etching the phase shift layer.
- the absorber layer may be made of a material mainly composed of tantalum nitride.
- an etching stopper film made of a material resistant to an etching gas for etching the absorber layer is provided between the phase shift layer and the absorber layer. It is. In that case, it is preferable that the etching stopper film is made of a material whose main component is chromium.
- the absorption film includes a low reflection layer on the absorber layer.
- the low reflection layer is made of a material mainly composed of tantalum oxide. It is preferable that
- the buffer film may be made of a material containing chromium as a main component, or may be made of a material containing ruthenium as a main component.
- the reflective mask according to the present invention is a reflective mask manufactured using the reflective mask blank according to the present invention, wherein the phase shift layer is processed into a transfer pattern shape, A blind area having a predetermined width around the transfer pattern area and an absorber layer formed on the phase shift layer.
- the reflective mask manufacturing method is a reflective mask manufacturing method using the reflective mask blank according to the present invention, wherein the absorber layer is formed using the first resist film of a predetermined shape as a mask.
- the step of processing the phase shift layer into the shape of the transfer pattern and the absorber layer in the transfer pattern area are removed by dry etching the absorber layer using a second resist film having a predetermined shape as a mask And a blind area comprising the phase shift layer and the absorber layer around the transfer pattern area Forming, those having a.
- an absorber layer that absorbs and attenuates EUV exposure light is provided on the phase shift layer, so that when the reflective mask is manufactured from the reflective mask blank, a blind area is formed.
- the absorber layer is provided on the transfer pattern area, so that the reflectance in the blind area can be lower than the reflectance of the phase shift layer in the transfer pattern area.
- the resist layer can be prevented from being exposed to light. As a result, it is possible to prevent the resist from being exposed to light and affecting the transfer object during transfer onto the transfer pattern.
- FIG. 1 is a diagram showing a cross-sectional structure of a reflective mask according to the present embodiment.
- a transfer pattern area 2 where a transfer pattern is formed
- a blind area 3 which is an area where a transfer pattern provided so as to surround the transfer pattern area 2 is not formed.
- the multilayer reflective film 4 is formed on the entire surface of the substrate 1.
- a buffer film 5 and an absorption film 6 are sequentially laminated on the multilayer reflective film 4.
- the absorption film 6 has a two-layer structure.
- the lower phase shift layer 7 includes a semi-transmissive layer 8 and an antireflection layer 9, and the upper layer includes an absorber layer 10 and a low reflection layer 11.
- the low reflection layer 11 may be provided if necessary, and may not be provided. If the upper absorber layer 10 and the low reflection layer 11 are formed at least in the leakage light area 116 shown in FIG. 6A in the blind area 3, the exposure of the portion where the exposure of the resist film on the subject overlaps is performed. Can be suppressed.
- the width of the leakage light area 116 in consideration of the positional accuracy of the mask stage of the exposure apparatus and the accuracy of the shielding plate for shielding the irradiation of the EUV exposure light to the blind area 3. Good. Further, when considering the pattern drawing exposure time to the resist film of the reflective mask blank when the reflective mask is manufactured, the upper absorber film 10 and the low reflective layer 11 are entirely disposed in the blind area 3 (FIG. 6A). The leakage light area 116 and the outer area 117) may be formed.
- a buffer film 5 and a phase shift layer 7 including a semi-transmissive layer 8 and an antireflection layer 9 are sequentially formed on the multilayer reflective film 4 in the shape of a transfer pattern. None is laminated on the multilayer reflective film 4 in the other transfer pattern area 2.
- the substrate 1 is required to have good smoothness and flatness, and a glass substrate can be used as the material thereof.
- a glass substrate has good smoothness and flatness, and is particularly suitable as a mask substrate.
- the glass substrate material include amorphous glass having a low thermal expansion coefficient (for example, SiO 2 —TiO 2 glass), crystallized glass on which quartz glass or ⁇ -quartz solid solution is deposited.
- the multilayer reflective film 4 formed on the substrate 1 has a structure in which a high refractive index material and a low refractive index material are alternately laminated, and can reflect light of a specific wavelength.
- a Mo / Si multilayer reflective film in which Mo and Si having a high reflectivity with respect to EUV light of 13 to 14 nm are alternately laminated for about 40 cycles can be mentioned.
- other multilayer reflective films used in the EUV light region include Ru / Si periodic multilayer reflective films, Mo / Be periodic multilayer reflective films, Mo compound / Si compound periodic multilayer reflective films, and Si / Nb periodic multilayer reflective films.
- the multilayer reflective film 4 can be formed by a known film forming method such as a magnetron sputtering method or an ion beam sputtering method.
- the buffer film 5 is provided for the purpose of protecting the lower multilayer reflective film 4 from being damaged by the etching process or the like when an upper layer to be described later is processed into the shape of a transfer pattern by an etching process or the like. Therefore, as the material of the buffer film 5, a material that is not easily affected by the etching process of the upper semi-transmissive layer 8 and can be removed later by etching is selected. For example, materials such as Cr, Al, Ru, Ta and nitrides thereof, SiO 2 , Si 3 N 4 , and Al 2 O 3 are preferable, and an appropriate material is selected in consideration of the material of the upper layer, the etching method, and the like.
- the thickness of the buffer film 5 is 100 nm or less, preferably 80 nm or less.
- the buffer film 5 can be formed using a known film forming method such as a magnetron sputtering method or an ion beam sputtering method.
- chromium nitride (CrN) or ruthenium (Ru) -based material that is difficult to be etched with a chlorine-based gas that is an etching gas for TaBN ( (Ru, RuNb, RuZr, RuMo, RuY, RuB, RuTi, RuLa, etc.) are preferably used as the buffer film 5.
- Ru or RuNb is used as the buffer film 5 since the Ru-based material is highly transparent in EUV light, it can be used as a photomask without being removed.
- the buffer film 5 may be provided as necessary, and the absorber layer may be provided directly on the reflective layer depending on the pattern forming method and conditions on the absorber layer.
- the absorption film 6 is a film having a function of absorbing EUV light. As described above, the absorption film 6 includes the phase shift layer 7 including the semi-transmissive layer 8 and the antireflection layer 9, and the absorber layer 10 formed thereon. .
- the low reflection layer 11 may be provided on the absorber layer 10 as necessary.
- the phase shift layer 7 functions as the above-described halftone mask in the transfer pattern area 2.
- the phase shift layer 7 and the buffer film when the wavelength of EUV exposure light is directly incident on the multilayer reflective film 4 and reflected (indicated by 12 in FIG. 1) as a reference are used.
- the reflectance of the reflected light (shown as 13 in FIG. 1) that has passed through 5 and incident on the multilayer reflective film 4 and reflected again and again transmitted through the buffer film 5 and the phase shift layer 7 is 5% to 20%. % Is preferred.
- the reflected light when reflected through the phase shift layer 7 reflected light when indicated by 13 in FIG. 1
- the reflected light when directly incident on the multilayer reflective film 4 shown by 12 in FIG. 1).
- phase difference with respect to the reflected light in the case of 175 to 185 degrees is preferable. Therefore, the material and film thickness of the phase shift layer 7 are designed so that the reflectance and the phase difference are as described above. In the case where a Ru-based material is used as the buffer film 5 and the portion of the buffer film from which the phase shift layer 7 is removed is not removed, the buffer film 5 does not contribute to the phase difference. 7 is preferably adjusted so that the phase difference between the reflected light through the phase shift layer 7 and the reflected light directly incident on the multilayer reflective film 4 is 175 to 185 degrees.
- the phase shift layer 7 is preferably made of a material mainly composed of tantalum (Ta).
- the semi-transmissive layer 8 is preferably made of tantalum metal (Ta), tantalum boride (TaB), tantalum silicide (TaSi), or a material mainly composed of these nitrides.
- the material is composed of a material mainly composed of tantalum nitride (TaN) or tantalum boron nitride (TaBN).
- the antireflection layer 9 is preferably made of a material mainly composed of tantalum oxide such as tantalum boron oxide (TaBO).
- the inspection light source is not EUV light, but a light source having a longer wavelength (for example, deep ultraviolet light having a wavelength of about 190 to 260 nm, or visible light having a longer wavelength than that). Etc.) is generally used. This is because the EUV light source is expensive, and in the case of EUV light, since the attenuation in the atmosphere is severe, the inside of the inspection machine needs to be evacuated and the pattern inspection machine becomes large.
- the reflective mask is irradiated with light having a long wavelength, and the pattern accuracy is inspected by the reflection contrast between the multilayer reflective film 4 and the mask pattern portion (portion where the phase shift layer 7 is laminated). Yes.
- the phase shift layer 7 is composed only of the semi-transmissive layer 8 such as tantalum boron nitride (TaBN), the reflectivity with respect to the inspection light is high, and it is difficult to obtain the reflection contrast with the multilayer reflective film 4. There's a problem.
- the phase shift layer 7 is a reflection whose main component is a tantalum oxide having a low reflectivity for inspection light on a semi-transparent layer 8 whose main component is tantalum metal or tantalum nitride having a high EUV light absorption rate.
- the prevention layer 9 is laminated.
- the absorber layer 10 has a role of absorbing EUV exposure light in the blind area 3.
- the material of the absorber layer 10 is mainly composed of tantalum metal (Ta), tantalum boride (TaB), tantalum silicide (TaSi), or a nitride thereof, or chromium such as CrN or low reflection Cr. It is preferable to be comprised from the material used as a component.
- the material is composed of a material mainly composed of tantalum nitride (TaN) or tantalum boron nitride (TaBN).
- the absorber layer 10 is preferably a material having resistance to an etching gas when etching the phase shift layer 7, and it is preferable to select the material of the phase shift layer 7 and the material of the absorber layer 10 in such a combination. .
- the low reflection layer 11 has a role of obtaining a reflection contrast between the multilayer reflection film 4 and the inspection light of the pattern inspection machine in the blind area 3. Further, it also has a role of obtaining a reflection contrast with respect to light having a long wavelength used when the exposure machine detects an alignment mark (not shown) formed in the blind area 3. Together with the absorber layer 10, it is possible to reduce the exposure of the resist film on the subject in the blind area.
- the low reflection layer 11 may be appropriately provided as necessary. For example, when the material of the absorber layer 10 also serves as the low reflection layer 11, it is not necessary to provide the low reflection layer.
- the antireflection layer 9 is preferably made of a material mainly composed of tantalum oxide such as tantalum boron oxide (TaBO).
- Cl 2 , SiCl 4 , HCl, CCl 4 , CHCl 3 can be applied as an etching gas when dry etching is possible with a chlorine-based gas such as tantalum metal or tantalum nitride. is there.
- examples of the etching gas in the case where it is necessary to perform dry etching with a fluorine-based gas such as a tantalum oxide-based, silicon oxide-based, molybdenum silicide-based, etc. include, for example, SF 6 , CF 4 , C 2. F 6 , CHF 3 and CHCl 3 are applicable.
- Example 1 Hereinafter, the embodiment of the present invention will be described more specifically with reference to examples.
- a method for manufacturing a reflective mask in this embodiment will be described with reference to the drawings.
- 2A to 2C, 3A, and 3B are views showing a cross-sectional structure of a manufacturing process of the reflective mask according to the present embodiment.
- a reflective mask blank was manufactured.
- a low-expansion SiO 2 —TiO 2 glass substrate having an outer shape of 152 mm square and a thickness of 6.3 mm was prepared as the substrate 1.
- Film formation was performed using an ion beam sputtering apparatus. First, using a Si target, a Si film was formed to a thickness of 4.2 nm. After that, using a Mo target, a Mo film was formed to a thickness of 2.8 nm. Was deposited to 4 nm. The total film thickness was 284 nm.
- the phase shift layer 7 includes the semi-transmissive layer 8 and the antireflection layer 9.
- a film containing Ta as a main component and containing N (TaN film) is formed to a thickness of 28 nm.
- TaO film a film having a thickness of 14 nm (TaO film) containing Ta as a main component and containing O was formed as the antireflection layer 9 on the semi-transmissive layer 8.
- a Ta target was used and film formation was performed by DC magnetron sputtering using a mixed gas of argon gas (Ar) and oxygen gas (O 2 ).
- a film (TaN film) containing Ta as a main component and containing N (TaN film) was formed as the absorber layer 10 on the antireflection layer 9 to a thickness of 40 nm.
- the film was formed by DC magnetron sputtering using a Ta target and a mixed gas of argon gas (Ar) and nitrogen gas (N 2 ).
- the reflective mask blank of this example was obtained.
- the example in case the low reflection layer 11 is not shown is shown.
- the TaN film as the absorber layer 10 was processed into a transfer pattern.
- the transfer pattern was a pattern for DRAM having a design rule of half pitch (hp) 45 nm.
- an EB resist was applied on the absorber layer 10 of the reflective mask blank, and a predetermined resist pattern was formed by EB drawing and development (not shown).
- a predetermined resist pattern was formed by EB drawing and development (not shown).
- the TaN film as the absorber layer 10 was dry-etched using a chlorine-based gas (Cl 2 ) to process the absorber layer 10 into a predetermined pattern.
- the antireflection layer 9 and the semi-transmissive layer 8 were sequentially etched in the same manner as the absorber layer 10 using the resist pattern as a mask.
- Etching of the antireflection layer 9 which is a TaO film is performed by dry etching using a fluorine-based gas (CF 4 ), and etching of the semi-transmissive layer 8 which is a TaN film is performed by dry etching using a chlorine-based gas (Cl 2 ). went.
- an EB resist is applied again, and the top of the absorber layer 10 in the blind area 3 is formed by EB drawing and development. Only a resist film was formed (not shown). Using this resist film as a mask, the absorber layer 10 in the transfer pattern area 2 was etched. Etching of the absorber layer 10 which is a TaN film was performed by dry etching using a chlorine-based gas (Cl 2 ).
- the buffer film 5 which is a CrN film is mixed with a mixed gas of chlorine and oxygen (mixing ratio is 4: 1 by volume). Used for dry etching. After the etching, the resist film was removed to manufacture a reflective mask according to this example.
- the reflective mask manufactured as described above is provided with the absorber layer 10 in the blind area 3, and the reflectance in the blind area 3 is lower than the reflectance in the transfer pattern area 2 due to the phase shift layer 7. Even when a single subject with a resist film formed thereon is exposed to multiple exposures by shifting the position while overlapping a part of the blind area 3 using a mold mask, resisting of the resist film in the blind area 3 is suppressed. can do.
- the reflective mask blank has a structure in which the absorber layer 10 is laminated on the phase shift layer 7 as the absorbing film 6, so that a reflective mask having the above effects can be obtained. did it.
- Example 2 the transflective layer 8 in Example 1 is changed to a film containing Ta and B and N (TaBN film) instead of the TaN film, and the antireflection layer 9 is changed to a TaO film.
- a film containing Ta and B and O as a main component TaBO film
- the absorber layer 10 is a film containing Ta and B and N as a main component (TaBN film) instead of the TaN film.
- Other configurations are the same as those in the first embodiment.
- the TaBN film constituting the semi-transmissive film 8 was formed on the buffer film 5 by a DC magnetron sputtering method using a sintered body target containing tantalum and boron and using a gas in which 40% of nitrogen was added to Ar. .
- the film thickness was set to 30 nm as a thickness capable of semi-transmitting EUV exposure light.
- the composition ratio of the formed TaBN film was 60:10:30 for Ta: B: N.
- the TaBO film constituting the antireflection layer 9 is formed on the semi-transmissive film 8 by a DC magnetron sputtering method using a target containing tantalum and boron, and a film thickness of 14 nm using a mixed gas in which 25% of oxygen is added to Ar.
- the film was formed to be
- the composition ratio of the formed TaBO film was 30:10:60 for Ta: B: O.
- the TaBN film constituting the absorber layer 10 is formed on the antireflection layer 9 by a DC magnetron sputtering method using a sintered body target containing tantalum and boron and using a gas obtained by adding 40% nitrogen to Ar. did.
- the film thickness was set to 40 nm as a thickness capable of sufficiently absorbing EUV exposure light.
- the composition ratio of the formed TaBN film was 60:10:30 for Ta: B: N.
- the configuration other than the above is the same as that of the first embodiment, and is the same configuration as FIG. 2A.
- a multilayer reflective film 4 made of a Mo / Si multilayer film, nitrided A reflective mask blank was obtained in which a buffer film 5 made of chromium, a semi-transmissive layer 8 made of TaBN film, an antireflection layer 9 made of TaBO film, and an absorber layer 10 made of TaBN film were sequentially laminated.
- the reflective mask blank shown in FIG. 3B could be obtained by processing the reflective mask blank in the same manner as in Example 1.
- the TaBN film used for the semipermeable membrane 8 and the absorber layer 10 in this example was etched in the same manner as the TaN film used for the same layer in Example 1.
- the TaBO film used for the antireflection layer 9 in this example was etched by the same method as the TaO film used for the same layer in Example 1.
- the reflective mask since the absorber layer 10 is provided in the blind area 3 and the reflectance in the blind area 3 is lower than the reflectance of the phase shift layer 7 in the transfer pattern area 2, the reflective mask is used. Thus, even when a single subject on which a resist film is formed is exposed a plurality of times while shifting the position while overlapping a part of the blind area 3, exposure of the resist film in the blind area 3 can be suppressed. Moreover, since the reflective mask blank was configured by laminating the absorber layer 10 on the phase shift layer 7, a reflective mask having the above-described effects could be obtained.
- Example 3 the semi-transmissive layer 8 in Example 1 is changed to a film containing Ta as a main component (TaB film) instead of the TaN film, and the antireflection layer 9 is changed to TaO instead of the TaO film.
- a film containing B and O as a main component (TaBO film) is used, and the absorber layer 10 is a film containing Ta as a main component (TaB film) instead of the TaN film.
- Other configurations are the same as those in the first embodiment.
- the TaB film constituting the semi-permeable film 8 was formed on the buffer film 5 by DC magnetron sputtering using a sintered body target containing tantalum and boron and using Ar gas.
- the film thickness was set to 28 nm as a thickness capable of semi-transmitting EUV exposure light.
- the composition ratio of the formed TaBN film was 80:20 for Ta: B.
- the TaBO film constituting the antireflection layer 9 is formed on the semi-transmissive film 8 by a DC magnetron sputtering method using a target containing tantalum and boron, and a film thickness of 14 nm using a mixed gas in which 25% of oxygen is added to Ar.
- the film was formed to be
- the composition ratio of the formed TaBO film was 30:10:60 for Ta: B: O.
- the TaB film constituting the absorber layer 10 was formed on the antireflection layer 9 by a DC magnetron sputtering method using a sintered body target containing tantalum and boron and using Ar gas.
- the film thickness was set to 40 nm as a thickness capable of sufficiently absorbing EUV exposure light.
- the composition ratio of the formed TaB film was 80:20 for Ta: B.
- the configuration other than the above is the same as that of the first embodiment, and is the same configuration as FIG. 2A.
- a multilayer reflective film 4 made of a Mo / Si multilayer film, nitrided A reflective mask blank was obtained in which a buffer film 5 made of chromium, a semi-transmissive layer 8 made of TaB film, an antireflection layer 9 made of TaBO film, and an absorber layer 10 made of TaB film were sequentially laminated.
- the reflective mask blank shown in FIG. 3B could be obtained by processing the reflective mask blank in the same manner as in Example 1.
- the TaB film used for the semipermeable membrane 8 and the absorber layer 10 in this example was etched by the same method as the TaN film used for the same layer in Example 1.
- the TaBO film used for the antireflection layer 9 in this example was etched by the same method as the TaO film used for the same layer in Example 1.
- the reflective mask since the absorber layer 10 is provided in the blind area 3 and the reflectance in the blind area 3 is lower than the reflectance of the phase shift layer 7 in the transfer pattern area 2, the reflective mask is used. Thus, even when a single subject on which a resist film is formed is exposed a plurality of times while shifting the position while overlapping a part of the blind area 3, exposure of the resist film in the blind area 3 can be suppressed. Moreover, since the reflective mask blank was configured by laminating the absorber layer 10 on the phase shift layer 7, a reflective mask having the above-described effects could be obtained.
- Example 4 shows a case where an etching stopper film 14 is formed between the antireflection layer 9 and the absorber layer 10 in addition to the configuration of the reflective mask in Example 1.
- the etching stopper film 14 does not damage the lower antireflection layer 9 in the step of etching the absorber layer 10 in the transfer pattern area 2 into the shape of the transfer pattern, which has been described with reference to FIG. It is necessary to be a material having resistance to an etching gas for etching the absorber layer 10.
- the absorber layer 10 is composed of a TaN film, and the TaN film is processed by dry etching using chlorine. Therefore, the etching stopper film 14 is resistant to etching by chlorine.
- a material mainly composed of chromium such as chromium nitride (CrN) is preferable.
- the reflective mask blank is formed by forming the antireflection film 9 from the multilayer reflection film 4 on the glass substrate 1 by the method described in the first embodiment, and then depositing a CrN film on the antireflection film 9 using a DC magnetron sputtering apparatus.
- the film thickness was 5 nm.
- the absorber layer 10 was formed on the etching stopper film 14 in the same manner as in Example 1.
- a multilayer reflective film 4 made of a Mo / Si multilayer film, a buffer film 5 made of chromium nitride, and a semi-transmissive film made of TaN film As a result, as shown in a sectional view in FIG. 4A, on the substrate 1 made of a glass substrate, a multilayer reflective film 4 made of a Mo / Si multilayer film, a buffer film 5 made of chromium nitride, and a semi-transmissive film made of TaN film.
- a reflective mask blank was obtained in which the layer 8, the antireflection layer 9 made of TaO film, the etching stopper film 14 made of CrN film, and the absorber layer 10 made of TaN film were sequentially laminated.
- the absorber layer 11 in the transfer pattern area 2 was processed into the shape of the transfer pattern by the same method as in Example 1. At this time, since the etching stopper film 14 is present, damage to the antireflection film 9 due to the etching gas of the absorber layer 11 can be prevented.
- the etching stopper film 14 which is a CrN film was dry etched using a mixed gas of chlorine and oxygen (mixing ratio is 4: 1 by volume).
- each layer was processed in the same manner as in Example 1 to obtain the reflective mask shown in FIG. 4B.
- the reflective mask since the absorber layer 10 is provided in the blind area 3 and the reflectance in the blind area 3 is lower than the reflectance of the phase shift layer 7 in the transfer pattern area 2, the reflective mask is used. Thus, even when a single subject on which a resist film is formed is exposed a plurality of times while shifting the position while overlapping a part of the blind area 3, exposure of the resist film in the blind area 3 can be suppressed. .
- the etching stopper film 14 was formed between the antireflection layer 9 and the absorber layer 10, damage to the antireflection film 9 due to the etching solution of the absorber layer 10 could be prevented.
- the reflective mask blank has a structure in which the absorber layer 10 is laminated on the phase shift layer 7, a reflective mask having the above-described effects can be obtained.
- Example 5 As Example 5, the case where the low reflective layer 11 is formed on the absorber layer 10 in addition to the configuration of the reflective mask in Example 4 is shown.
- the reflective mask blank was formed by forming the etching stopper film 14 from the multilayer reflective film 4 on the glass substrate 1 by the method described in Example 4, and then forming the TaN film as the absorber layer 10 on the etching stopper film 14.
- the TaN film was deposited to a thickness of 28 nm by a DC magnetron sputtering apparatus.
- a TaO film as a low reflection layer 11 was formed on the absorber layer 10 with a film thickness of 14 nm using a DC magnetron sputtering apparatus.
- the multilayer reflective film 4 made of Mo / Si multilayer
- the buffer film 5 made of chromium nitride
- the semi-transmissive made of TaN film A reflective mask blank was obtained in which the layer 8, the antireflection layer 9 made of TaO film, the etching stopper film 14 made of CrN film, the absorber layer 10 made of TaN film, and the low reflection film 11 made of TaO film were sequentially laminated. .
- the transfer pattern was a pattern for DRAM having a design rule of half pitch (hp) 45 nm.
- an EB resist was applied on the low reflective layer 11 of the reflective mask blank, and a predetermined resist pattern was formed by EB drawing and development.
- the TaO film as the low reflection layer 11 was dry-etched using a fluorine-based gas (CF 4 ) to process the low reflection layer 11 into a predetermined pattern.
- the TaO film as the absorber layer 10 was dry-etched using a chlorine-based gas (Cl 2 ) to process the absorber layer 10 into a predetermined pattern.
- the etching stopper film 14 which is a CrN film was dry etched using a mixed gas of chlorine and oxygen (mixing ratio is 4: 1 by volume). Subsequently, the antireflection layer 9 and the semi-transmissive layer 8 were sequentially etched using the etching stopper film 14 and the like as a mask. Etching of the antireflection layer 9 which is a TaO film is performed by dry etching using a fluorine-based gas (CF 4 ), and etching of the semi-transmissive layer 8 which is a TaN film is performed by dry etching using a chlorine-based gas (Cl 2 ). went.
- CF 4 fluorine-based gas
- Cl 2 chlorine-based gas
- the buffer film 5 that is a CrN film is used using a mixed gas of chlorine and oxygen (mixing ratio is 4: 1 by volume). Dry etching was performed to expose the surface of the reflective film 4 to some extent in the pattern portion. At the same time, the etching stopper film 14 which is the same CrN film was also dry etched to expose the surface of the antireflection layer 9. After these etchings, the resist film was removed to produce a reflective mask according to this example shown in FIG. 5B.
- the reflective mask since the absorber layer 10 is provided in the blind area 3 and the reflectance in the blind area 3 is lower than the reflectance of the phase shift layer 7 in the transfer pattern area 2, the reflective mask is used. Thus, even when a single subject on which a resist film is formed is exposed a plurality of times while shifting the position while overlapping a part of the blind area 3, exposure of the resist film in the blind area 3 can be suppressed. .
- the etching stopper film 14 is formed between the antireflection layer 9 and the absorber layer 10, the antireflection film 9 is damaged during the dry etching of the absorber layer 10 using the fluorine-based gas (CF 4 ). I was able to prevent it.
- the reflective mask blank since the reflective mask blank has a structure in which the absorber layer 10 and the low reflection film 11 are laminated on the phase shift layer 7, it is between the multilayer reflection film 4 and the low reflection layer in the inspection light of the pattern inspection machine.
- the optical contrast can be sufficiently obtained, and pattern inspection with higher accuracy is possible.
- Example 6 Hereinafter, as Example 6, the buffer film 5 in Example 1 is replaced with a CrN film to form a RuNb film, and the absorber layer 10 is replaced with TaN to form a CrN film.
- Other configurations are the same as those in the first embodiment.
- a sintered magnet target containing ruthenium and niobium was used on the multilayer reflective film 4 by DC magnetron sputtering, and the film thickness was 2.5 nm.
- the CrN film constituting the absorber layer 10 was formed on the antireflection layer 9 by a DC magnetron sputtering method using a Cr target and using a gas obtained by adding nitrogen to Ar.
- the film thickness was 52 nm as a thickness that can sufficiently absorb EUV exposure light.
- the composition ratio of the formed CrN film was 90:10 for Cr: N.
- the configuration other than the above is the same as that of the first embodiment, and is the same configuration as FIG. 2A.
- a multilayer reflective film 4 made of a Mo / Si multilayer film, RuNb On the substrate 1 made of a glass substrate, a multilayer reflective film 4 made of a Mo / Si multilayer film, RuNb
- a reflective mask blank was obtained in which a buffer film 5 made of, a semi-transmissive layer 8 made of TaBN film, an antireflection layer 9 made of TaBO film, and an absorber layer 10 made of CrN film were sequentially laminated.
- the TaN film as the absorber layer 10 was processed into a transfer pattern.
- the transfer pattern was a DRAM pattern having a design rule of half pitch (hp) 45 nm.
- an EB resist was applied on the absorber layer 10 of the reflective mask blank, and a predetermined resist pattern was formed by EB drawing and development (not shown).
- a predetermined resist pattern was formed by EB drawing and development (not shown).
- the CrN film that is the absorber layer 10 is dry-etched using a mixed gas of chlorine and oxygen (mixing ratio is 4: 1 by volume), and the absorber layer 10 is predetermined. The pattern was processed.
- the antireflection layer 9 and the semi-transmissive layer 8 were sequentially etched in the same manner as the absorber layer 10 using the resist pattern as a mask.
- Etching of the antireflection layer 9 which is a TaO film is performed by dry etching using a fluorine-based gas (CF 4 ), and etching of the semi-transmissive layer 8 which is a TaN film is performed by dry etching using a chlorine-based gas (Cl 2 ). went.
- the absorber layer 10 in the transfer pattern area 2 was etched.
- Etching of the absorber layer 10 which is a CrN film was performed by dry etching using a mixed gas of chlorine and oxygen (mixing ratio is 4: 1 by volume). After the etching, the resist film was removed to manufacture a reflective mask according to this example.
- the buffer film 5 has a high transmittance with respect to EUV exposure light, so that it is used as a reflective mask in the state shown in FIG. 3A without being subjected to dry etching for transferring the pattern.
- the reflective mask since the absorber layer 10 is provided in the blind area 3 and the reflectance in the blind area 3 is lower than the reflectance of the phase shift layer 7 in the transfer pattern area 2, the reflective mask is used. Thus, even when a single subject on which a resist film is formed is exposed a plurality of times while shifting the position while overlapping a part of the blind area 3, exposure of the resist film in the blind area 3 can be suppressed. Moreover, since the reflective mask blank was configured by laminating the absorber layer 10 on the phase shift layer 7, a reflective mask having the above-described effects could be obtained.
- the low reflection layer 11 is not shown.
- the low reflection layer 11 made of the same Cr-based material (CrON, CrO, CrOC, CrOCN) is formed on the absorber layer 10. Since the reflection contrast of the alignment mark in the blind area is increased, it is preferable when performing optical alignment. Further, the absorber layer 10 and the low reflection layer 11 can be formed with the same Cr target, and etching at once with the same etching gas using the resist pattern as a mask is particularly effective from the viewpoint of production efficiency and production stability. preferable.
- this invention is not limited to the said embodiment, It can implement by changing suitably.
- an example in which the low reflection layer 11 is not provided is shown except for the fifth embodiment.
- the low reflection layer 11 for example, a material mainly composed of tantalum oxide such as tantalum boron oxide (TaBO), silicon nitride oxide (SiON), silicon dioxide (SiO 2 ), molybdenum silicide nitride (MoSiN). ), Molybdenum silicide oxynitride (MoSiON) or the like.
- the resist pattern serves as a mask and the target to be dry etched is the low reflective layer 11 with a thin layer thickness. It can be transferred to the reflective layer 11. Since the pattern can be transferred by etching the absorber layer 10 and the like using the low reflective layer 11 as a mask, a highly accurate mask can be manufactured, which is preferable.
- the buffer film 5 may be provided as necessary, and the absorber layer may be provided directly on the reflective layer depending on the pattern forming method and conditions on the absorber layer. Furthermore, when a Ru layer is provided to leave the surface of the multilayer reflective film 4 as a protective layer after the reflective mask is manufactured, the surface of the Ru layer is not roughened when the upper semi-transmissive layer 8 is etched. Alternatively, a CrN layer may be provided on the upper layer of the Ru layer, and the buffer layer 5 may be configured by these two layers.
- Example 3 although the structure which adds the etching stopper film
- the method for forming and processing the etching stopper film 14 is the same as the method described in the third embodiment.
- the material, size, processing procedure, and the like in the above-described embodiment are merely examples, and various modifications can be made within the range where the effects of the present invention are exhibited. In addition, various modifications can be made without departing from the scope of the object of the present invention.
- the present invention has been described with respect to a semi-transmissive layer, the present invention can also be applied to a normal absorbing layer in order to suppress the reflectance of the blind area.
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Abstract
Description
図6Aに示すように、関連するEUV露光用マスクは、基板110上に露光光の高反射領域となる多層膜111が形成され、その多層膜111上に低反射領域となる低反射層112のパターンが形成されている。当該低反射層112は2層膜で構成されており、露光波長において、露光光が多層膜111に直接入射するときの反射率を基準とした場合の低反射層112を通過して入射するときの反射率は5乃至20%であり、低反射層112からの反射光と多層膜111からの反射光との位相差が175乃至185度であることを特徴とする。
前記の通り、露光装置でフォトマスクの転写パターン113を被写体上のレジスト膜へ複数転写する際、例えば、1回目の露光で被写体上に転写された転写パターンを113Aとし、2回目の露光で転写された転写パターンを113B、3回目の露光で転写された転写パターンを113C、4回目の露光で転写された転写パターンを113Dというように、以降順次露光していく。この場合、転写パターンの吸収体膜112が残存する部分である低反射部分(被写体上のレジスト膜を感光させない部分)と、同じく吸収体膜112が残存する部分の漏れ光エリア116とが重なってしまうことで、2回分の露光が重なる部分120、3回分の露光が重なってしまう部分121、4回分の露光が重なってしまう部分122が被写体上のレジスト膜に生じてしまう。
図1は、本実施の形態に係る反射型マスクの断面構造を示す図である。
図1において、基板1上には、転写パターンが形成されている転写パターンエリア2と、当該転写パターンエリア2の周りを囲むように設けられた転写パターンが形成されていない領域であるブラインドエリア3があり、基板1上の全面には多層反射膜4が形成されている。
以下、実施例により、本発明の実施の形態をさらに具体的に説明する。まずに本実施例における反射型マスクの製造方法を、図面を用いて説明する。
図2A~図2C、図3A及び図3Bは、本実施の形態に係る反射型マスクの製造工程の断面構造を示す図である。
以下、実施例2として、実施例1における、半透過層8を、TaN膜に替えてTaを主成分としてBとNを含む膜(TaBN膜)とし、反射防止層9を、TaO膜に替えてTaを主成分としてBとOを含む膜(TaBO膜)とし、吸収体層10として、TaN膜に替えてTaを主成分としてBとNを含む膜(TaBN膜)とした場合を示す。その他の構成は実施例1と同様とする。
以下、実施例3として、実施例1における、半透過層8を、TaN膜に替えてTaを主成分としてBを含む膜(TaB膜)とし、反射防止層9を、TaO膜に替えてTaを主成分としてBとOを含む膜(TaBO膜)とし、吸収体層10として、TaN膜に替えてTaを主成分としてBを含む膜(TaB膜)とした場合を示す。その他の構成は実施例1と同様とする。
実施例4として、実施例1における反射型マスクの構成に加えて、反射防止層9と吸収体層10の間に、エッチングストッパー膜14を形成した場合を示す。エッチングストッパー膜14は、実施例1において図2Bを用いて説明した、転写パターンエリア2における吸収体層10を転写パターンの形状にエッチングする工程において、下層の反射防止層9にダメージを与えないように保護するために設けるものであり、吸収体層10をエッチングするエッチングガスに耐性を有する材料である必要がある。例えば、実施例1においては、吸収体層10はTaN膜から構成されており、TaN膜の加工は塩素を用いたドライエッチングにより行っているので、エッチングストッパー膜14としては、塩素によるエッチングに耐性のある窒化クロム(CrN)等のクロムを主成分とする材料が好適である。
実施例5として、実施例4における反射型マスクの構成に加えて、吸収体層10の上に低反射層11を形成した場合を示す。以下、実施例4の構成の吸収体層10の上にTaO膜からなる低反射層11を形成した場合の例を説明する。まず反射型マスクブランクは、実施例4で説明した方法で、ガラス基板1上に多層反射膜4からエッチングストッパー膜14を形成した後に、エッチングストッパー膜14の上に、吸収体層10としてTaN膜をDCマグネトロンスパッタリング装置により、膜厚28nm成膜した。続いて、吸収体層10の上に、低反射層11としてTaO膜をDCマグネトロンスパッタリング装置により、膜厚14nm成膜した。
以下、実施例6として、実施例1における、バッファ膜5をCrN膜に替えてRuNb膜とし、吸収体層10を、TaNに替えてCrN膜とした場合を示す。その他の構成は実施例1と同様とする。
本発明は、半透過層について記述したが、通常の吸収層に対しても、ブラインドエリアの反射率を抑えるために実施することも可能である。
Claims (16)
- 基板と、前記基板上に形成された、高屈折率層と低屈折率層とを交互に積層させた構造の多層反射膜と、前記多層反射膜上に積層されたEUV露光光を吸収する吸収膜と、を備える反射型マスクブランクであって、
前記吸収膜は、層内を通過して前記多層反射膜で反射されるEUV露光光に、直接入射して前記多層反射膜で反射されるEUV露光光に対して所定の位相差を生じさせる位相シフト層と、前記位相シフト層の上に積層され、単独で又は前記位相シフト層と共に、層内を通過するEUV露光光を吸収して減衰させる吸収体層と、を備える反射型マスクブランク。 - 前記位相シフト層は、タンタルを主成分とする材料から構成されている請求項1記載の反射型マスクブランク。
- 前記位相シフト層は、半透過層と反射防止層とを含む請求項1又は2記載の反射型マスクブランク。
- 前記半透過層は、窒化タンタルを主成分とする材料から構成されている請求項3記載の反射型マスクブランク。
- 前記反射防止層は、酸化タンタルを主成分とする材料から構成されている請求項3又は4記載の反射型マスクブランク。
- 前記吸収体層は、前記位相シフト層をエッチングするエッチングガスに対して耐性を有する材料から構成されている請求項1乃至5のいずれか記載の反射型マスクブランク。
- 前記吸収体層は、窒化タンタルを主成分とする材料から構成されている請求項1乃至5のいずれか記載の反射型マスクブランク。
- 前記位相シフト層と前記吸収体層の間に、吸収体層をエッチングするエッチングガスに対して耐性を有する材料から構成されているエッチングストッパー膜を備える請求項1乃至7のいずれか記載の反射型マスクブランク。
- 前記エッチングストッパー膜は、クロムを主成分とする材料から構成されている請求項8記載の反射型マスクブランク。
- 前記吸収膜は、前記吸収体層の上に低反射層を備える請求項1乃至9のいずれか記載の反射型マスクブランク。
- 前記低反射層は、酸化タンタルを主成分とする材料から構成されている請求項10記載の反射型マスクブランク。
- 前記多層反射膜と吸収膜の間にバッファ膜を備える請求項1乃至11のいずれか記載の反射型マスクブランク。
- 前記バッファ膜は、クロムを主成分とする材料から構成されている請求項12記載の反射型マスクブランク。
- 前記バッファ膜は、ルテニウムを主成分とする材料から構成されている請求項12記載の反射型マスクブランク。
- 請求項1乃至14のいずれか記載の反射型マスクブランクを用いて製造された反射型マスクであって、
前記位相シフト層が転写パターンの形状に加工されている転写パターンエリアと、
前記転写パターンエリアの周りに所定の幅で形成され、前記位相シフト層の上に吸収体層が形成されているブラインドエリアと、
を備える反射型マスク。 - 請求項1乃至14のいずれか記載の反射型マスクブランクを用いた反射型マスクの製造方法であって、
所定の形状の第1のレジスト膜をマスクとして吸収体層をドライエッチングすることにより、転写パターンエリアの前記吸収体層を転写パターンの形状に加工する工程と、
前記第1のレジスト膜をマスクとして前記位相シフト層をドライエッチングすることにより、前記転写パターンエリアの前記位相シフト層を前記転写パターンの形状に加工する工程と、
所定の形状の第2のレジスト膜をマスクとして前記吸収体層をドライエッチングすることにより、前記転写パターンエリアの前記吸収体層を除去するとともに、前記転写パターンエリアの周りに前記位相シフト層及び前記吸収体層を備えるブラインドエリアを形成する工程と、
を具備する反射型マスクの製造方法。
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US8367279B2 (en) | 2013-02-05 |
KR101581977B1 (ko) | 2015-12-31 |
JP5524828B2 (ja) | 2014-06-18 |
KR20110008064A (ko) | 2011-01-25 |
US20110027703A1 (en) | 2011-02-03 |
JPWO2009122972A1 (ja) | 2011-07-28 |
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