TWI861140B - 攝像裝置 - Google Patents

攝像裝置 Download PDF

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Publication number
TWI861140B
TWI861140B TW109121742A TW109121742A TWI861140B TW I861140 B TWI861140 B TW I861140B TW 109121742 A TW109121742 A TW 109121742A TW 109121742 A TW109121742 A TW 109121742A TW I861140 B TWI861140 B TW I861140B
Authority
TW
Taiwan
Prior art keywords
substrate
pixel
wiring
transistor
imaging device
Prior art date
Application number
TW109121742A
Other languages
English (en)
Chinese (zh)
Other versions
TW202109616A (zh
Inventor
河本健芳
中溝正彥
小野俊明
山下知憲
Original Assignee
日商索尼半導體解決方案公司
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Publication of TW202109616A publication Critical patent/TW202109616A/zh
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Publication of TWI861140B publication Critical patent/TWI861140B/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/423—Shielding layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW109121742A 2019-06-26 2020-06-24 攝像裝置 TWI861140B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-119099 2019-06-26
JP2019119099 2019-06-26

Publications (2)

Publication Number Publication Date
TW202109616A TW202109616A (zh) 2021-03-01
TWI861140B true TWI861140B (zh) 2024-11-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW109121742A TWI861140B (zh) 2019-06-26 2020-06-24 攝像裝置
TW113137694A TWI900270B (zh) 2019-06-26 2020-06-24 光偵測裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW113137694A TWI900270B (zh) 2019-06-26 2020-06-24 光偵測裝置

Country Status (7)

Country Link
US (3) US11901391B2 (https=)
EP (1) EP3993011A4 (https=)
JP (1) JP7619943B2 (https=)
KR (2) KR102805550B1 (https=)
CN (2) CN119451260A (https=)
TW (2) TWI861140B (https=)
WO (1) WO2020262629A1 (https=)

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TWI861140B (zh) 2019-06-26 2024-11-11 日商索尼半導體解決方案公司 攝像裝置
JP7427646B2 (ja) * 2021-12-07 2024-02-05 キヤノン株式会社 光電変換装置、光電変換システム、移動体
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JP2024171089A (ja) * 2023-05-29 2024-12-11 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
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WO2024252866A1 (ja) * 2023-06-06 2024-12-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2024253074A1 (ja) * 2023-06-09 2024-12-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
JP2025167910A (ja) * 2024-04-26 2025-11-07 キヤノン株式会社 光電変換装置および機器
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Also Published As

Publication number Publication date
US12183760B2 (en) 2024-12-31
CN113841242B (zh) 2025-06-13
EP3993011A1 (en) 2022-05-04
US20220367555A1 (en) 2022-11-17
US20240204028A1 (en) 2024-06-20
JP7619943B2 (ja) 2025-01-22
KR102805550B1 (ko) 2025-05-13
TWI900270B (zh) 2025-10-01
WO2020262629A1 (ja) 2020-12-30
CN113841242A (zh) 2021-12-24
KR20250059540A (ko) 2025-05-02
EP3993011A4 (en) 2022-11-23
TW202510027A (zh) 2025-03-01
TW202109616A (zh) 2021-03-01
JPWO2020262629A1 (https=) 2020-12-30
US11901391B2 (en) 2024-02-13
US20250072151A1 (en) 2025-02-27
CN119451260A (zh) 2025-02-14
KR20220023760A (ko) 2022-03-02

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