TWI842517B - 粒子束檢測設備 - Google Patents

粒子束檢測設備 Download PDF

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Publication number
TWI842517B
TWI842517B TW112116941A TW112116941A TWI842517B TW I842517 B TWI842517 B TW I842517B TW 112116941 A TW112116941 A TW 112116941A TW 112116941 A TW112116941 A TW 112116941A TW I842517 B TWI842517 B TW I842517B
Authority
TW
Taiwan
Prior art keywords
wafer
load lock
temperature
gas
main chamber
Prior art date
Application number
TW112116941A
Other languages
English (en)
Chinese (zh)
Other versions
TW202349541A (zh
Inventor
傑若恩 杰若德 勾森
陳德育
班寧 丹尼斯 赫曼 卡斯柏 范
艾德恩 寇妮絲 卡迪可
賀蒙 馬卓恩 配特思 克力司提安斯 范
王二恒
喬漢斯 安德瑞斯 亨利克斯 瑪利亞 賈伯斯
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW202349541A publication Critical patent/TW202349541A/zh
Application granted granted Critical
Publication of TWI842517B publication Critical patent/TWI842517B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Robotics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW112116941A 2018-07-17 2019-07-17 粒子束檢測設備 TWI842517B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862699643P 2018-07-17 2018-07-17
US62/699,643 2018-07-17
US201962869986P 2019-07-02 2019-07-02
US62/869,986 2019-07-02

Publications (2)

Publication Number Publication Date
TW202349541A TW202349541A (zh) 2023-12-16
TWI842517B true TWI842517B (zh) 2024-05-11

Family

ID=67297162

Family Applications (5)

Application Number Title Priority Date Filing Date
TW112116941A TWI842517B (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW114112056A TW202531455A (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW110127856A TWI824271B (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW113100794A TWI879378B (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW108125301A TWI738028B (zh) 2018-07-17 2019-07-17 粒子束檢測設備

Family Applications After (4)

Application Number Title Priority Date Filing Date
TW114112056A TW202531455A (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW110127856A TWI824271B (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW113100794A TWI879378B (zh) 2018-07-17 2019-07-17 粒子束檢測設備
TW108125301A TWI738028B (zh) 2018-07-17 2019-07-17 粒子束檢測設備

Country Status (6)

Country Link
US (4) US11430678B2 (https=)
JP (3) JP7296410B2 (https=)
KR (4) KR102796031B1 (https=)
CN (2) CN112424922A (https=)
TW (5) TWI842517B (https=)
WO (1) WO2020016087A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240258138A1 (en) * 2018-07-17 2024-08-01 Asml Netherlands B.V. Particle beam inspection apparatus

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7472114B2 (ja) 2018-09-28 2024-04-22 ラム リサーチ コーポレーション 堆積副生成物の蓄積からの真空ポンプの保護
EP3916482A1 (en) * 2020-05-27 2021-12-01 ASML Netherlands B.V. Conditioning device and corresponding object handler, stage apparatus and lithographic apparatus
JP2023538840A (ja) * 2020-08-21 2023-09-12 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子検査装置
JP7249989B2 (ja) * 2020-12-16 2023-03-31 日本電子株式会社 荷電粒子線装置
US11892382B2 (en) * 2021-08-27 2024-02-06 Taiwan Semiconductor Manufacturing Company Ltd. Method for detecting environmental parameter in semiconductor fabrication facility
WO2023110244A1 (en) 2021-12-15 2023-06-22 Asml Netherlands B.V. Charged particle assessment system
EP4213176A1 (en) 2022-01-13 2023-07-19 ASML Netherlands B.V. Charged particle assessment system
KR20240161114A (ko) * 2022-03-11 2024-11-12 에이에스엠엘 네델란즈 비.브이. 온도 컨디셔닝 플레이트를 포함한 진공 챔버 시스템
CN119404299A (zh) * 2022-08-05 2025-02-07 Asml荷兰有限公司 高生产量装载锁定腔室
CN115020308B (zh) * 2022-08-08 2022-11-22 上海果纳半导体技术有限公司武汉分公司 晶圆传输装置、设备平台系统及其晶圆传输方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102275739A (zh) * 2006-06-02 2011-12-14 应用材料股份有限公司 多槽负载锁定室及其操作方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0155572B1 (ko) * 1991-05-28 1998-12-01 이노우에 아키라 감압처리 시스템 및 감압처리 방법
JP3225170B2 (ja) * 1993-10-22 2001-11-05 東京エレクトロン株式会社 真空処理装置
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US6375746B1 (en) * 1998-07-10 2002-04-23 Novellus Systems, Inc. Wafer processing architecture including load locks
US6110232A (en) * 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
KR200231865Y1 (ko) * 1998-10-17 2001-10-25 김영환 반도체증착장비용로드락챔버의이물질증착방지장치
US6402401B1 (en) * 1999-10-19 2002-06-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2001222099A (ja) * 2000-02-10 2001-08-17 Toshiba Corp 荷電ビーム描画装置および荷電ビーム描画方法
KR20030032034A (ko) * 2000-09-15 2003-04-23 어플라이드 머티어리얼스, 인코포레이티드 처리 장비용 두 개의 이중 슬롯 로드록
JP4553471B2 (ja) * 2000-09-19 2010-09-29 東京エレクトロン株式会社 処理装置及び処理システム
JP2002151569A (ja) * 2000-11-14 2002-05-24 Tokyo Electron Ltd 基板処理装置
JP2003152046A (ja) * 2001-08-31 2003-05-23 Tdk Corp 真空処理装置及び被処理物の製造方法
SG115630A1 (en) * 2003-03-11 2005-10-28 Asml Netherlands Bv Temperature conditioned load lock, lithographic apparatus comprising such a load lock and method of manufacturing a substrate with such a load lock
JP4194495B2 (ja) * 2004-01-07 2008-12-10 東京エレクトロン株式会社 塗布・現像装置
US20050284572A1 (en) * 2004-06-29 2005-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Heating system for load-lock chamber
US9305814B2 (en) * 2004-12-20 2016-04-05 Tokyo Electron Limited Method of inspecting substrate processing apparatus and storage medium storing inspection program for executing the method
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
JP4619854B2 (ja) 2005-04-18 2011-01-26 東京エレクトロン株式会社 ロードロック装置及び処理方法
JP5036290B2 (ja) * 2006-12-12 2012-09-26 東京エレクトロン株式会社 基板処理装置および基板搬送方法、ならびにコンピュータプログラム
KR100855325B1 (ko) * 2006-12-27 2008-09-04 세메스 주식회사 로드락 챔버, 기판 처리 장치 및 기판 처리 방법
US8905124B2 (en) * 2007-06-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature controlled loadlock chamber
JP2009123723A (ja) * 2007-11-12 2009-06-04 Hitachi High-Technologies Corp 真空処理装置または真空処理方法
NL1036164A1 (nl) * 2007-11-15 2009-05-18 Asml Netherlands Bv Substrate processing apparatus and device manufacturing method.
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
JP5391055B2 (ja) * 2009-12-25 2014-01-15 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置の製造システム
JP5552826B2 (ja) * 2010-02-10 2014-07-16 株式会社ニコン 基板貼り合せ装置、積層半導体装置製造方法及び積層半導体装置
US8808788B2 (en) * 2010-09-20 2014-08-19 Tokyo Electron Limited Processing a wafer with a post application bake (PAB) procedure
TWI550686B (zh) * 2011-11-04 2016-09-21 東京威力科創股份有限公司 基板處理系統、基板運送方法及電腦記憶媒體
TWI524456B (zh) * 2011-11-04 2016-03-01 東京威力科創股份有限公司 基板處理系統、基板運送方法、程式及電腦記憶媒體
JP5973731B2 (ja) 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US9378994B2 (en) * 2013-03-15 2016-06-28 Applied Materials, Inc. Multi-position batch load lock apparatus and systems and methods including same
JP6108643B2 (ja) * 2013-07-09 2017-04-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、及び異常処理プログラム
KR101846850B1 (ko) * 2013-09-30 2018-04-09 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치, 기판 처리 시스템 및 기록 매체
JP6293645B2 (ja) * 2013-12-27 2018-03-14 東京エレクトロン株式会社 基板処理システム
CN108028193B (zh) * 2015-09-30 2022-04-22 东京毅力科创株式会社 基板处理装置和基板处理方法
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
US10714362B2 (en) * 2018-03-15 2020-07-14 Kokusai Electric Corporation Substrate processing apparatus and method of manufacturing semiconductor device
EP3575873A1 (en) 2018-05-28 2019-12-04 ASML Netherlands B.V. Particle beam apparatus
KR102796031B1 (ko) * 2018-07-17 2025-04-16 에이에스엠엘 네델란즈 비.브이. 입자 빔 검사 장치
US10896821B2 (en) * 2018-09-28 2021-01-19 Lam Research Corporation Asymmetric wafer bow compensation by physical vapor deposition
CN112970089A (zh) * 2018-11-06 2021-06-15 Asml荷兰有限公司 用于在带电粒子束设备中对晶片进行热调节的系统和方法
JP7188256B2 (ja) * 2019-04-18 2022-12-13 株式会社Sumco 気相成長方法及び気相成長装置
US11440117B2 (en) * 2019-09-27 2022-09-13 Jian Zhang Multiple module chip manufacturing arrangement
US11581204B2 (en) * 2020-10-20 2023-02-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102275739A (zh) * 2006-06-02 2011-12-14 应用材料股份有限公司 多槽负载锁定室及其操作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240258138A1 (en) * 2018-07-17 2024-08-01 Asml Netherlands B.V. Particle beam inspection apparatus
US12354891B2 (en) * 2018-07-17 2025-07-08 Asml Netherlands B.V. Particle beam inspection apparatus

Also Published As

Publication number Publication date
KR20210022068A (ko) 2021-03-02
TWI879378B (zh) 2025-04-01
JP2023073317A (ja) 2023-05-25
US20200027763A1 (en) 2020-01-23
TW202531455A (zh) 2025-08-01
US20240258138A1 (en) 2024-08-01
KR20240024306A (ko) 2024-02-23
TW202349541A (zh) 2023-12-16
JP7296410B2 (ja) 2023-06-22
JP2021530865A (ja) 2021-11-11
TW202211349A (zh) 2022-03-16
US11942340B2 (en) 2024-03-26
TW202018755A (zh) 2020-05-16
US11430678B2 (en) 2022-08-30
TWI738028B (zh) 2021-09-01
TW202433637A (zh) 2024-08-16
CN118737894A (zh) 2024-10-01
KR20240024307A (ko) 2024-02-23
KR102796031B1 (ko) 2025-04-16
KR20250057069A (ko) 2025-04-28
WO2020016087A1 (en) 2020-01-23
US20250336696A1 (en) 2025-10-30
US20220415678A1 (en) 2022-12-29
JP7608500B2 (ja) 2025-01-06
CN112424922A (zh) 2021-02-26
US12354891B2 (en) 2025-07-08
TWI824271B (zh) 2023-12-01
KR102790227B1 (ko) 2025-04-03
JP2025041727A (ja) 2025-03-26

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