KR102796031B1 - 입자 빔 검사 장치 - Google Patents

입자 빔 검사 장치 Download PDF

Info

Publication number
KR102796031B1
KR102796031B1 KR1020247004344A KR20247004344A KR102796031B1 KR 102796031 B1 KR102796031 B1 KR 102796031B1 KR 1020247004344 A KR1020247004344 A KR 1020247004344A KR 20247004344 A KR20247004344 A KR 20247004344A KR 102796031 B1 KR102796031 B1 KR 102796031B1
Authority
KR
South Korea
Prior art keywords
wafer
load lock
temperature
gas
lock system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247004344A
Other languages
English (en)
Korean (ko)
Other versions
KR20240024307A (ko
Inventor
제로엔 제라드 고센
테-유 첸
데니스 헤르맨 캐스퍼 반 배닝
에드윈 코르넬리스 카디크
마르티즌 페트루스 크리스티아누스 반 헤우멘
에르헹 왕
요하네스 안드레아스 헨리쿠스 마리아 야콥스
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Priority to KR1020257011736A priority Critical patent/KR20250057069A/ko
Publication of KR20240024307A publication Critical patent/KR20240024307A/ko
Application granted granted Critical
Publication of KR102796031B1 publication Critical patent/KR102796031B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/67201
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841Constructional issues related to vacuum environment, e.g. load-lock chamber
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • H01L21/67017
    • H01L21/67098
    • H01L21/67248
    • H01L21/6875
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0441Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302Mechanical parts of transfer devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308Vertical transfer of a single workpiece
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Robotics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020247004344A 2018-07-17 2019-07-11 입자 빔 검사 장치 Active KR102796031B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257011736A KR20250057069A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862699643P 2018-07-17 2018-07-17
US62/699,643 2018-07-17
US201962869986P 2019-07-02 2019-07-02
US62/869,986 2019-07-02
KR1020217001541A KR20210022068A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치
PCT/EP2019/068637 WO2020016087A1 (en) 2018-07-17 2019-07-11 Particle beam inspection apparatus

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217001541A Division KR20210022068A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257011736A Division KR20250057069A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치

Publications (2)

Publication Number Publication Date
KR20240024307A KR20240024307A (ko) 2024-02-23
KR102796031B1 true KR102796031B1 (ko) 2025-04-16

Family

ID=67297162

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020247004344A Active KR102796031B1 (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치
KR1020247004343A Active KR102790227B1 (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치
KR1020257011736A Pending KR20250057069A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치
KR1020217001541A Ceased KR20210022068A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020247004343A Active KR102790227B1 (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치
KR1020257011736A Pending KR20250057069A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치
KR1020217001541A Ceased KR20210022068A (ko) 2018-07-17 2019-07-11 입자 빔 검사 장치

Country Status (6)

Country Link
US (4) US11430678B2 (https=)
JP (3) JP7296410B2 (https=)
KR (4) KR102796031B1 (https=)
CN (2) CN112424922A (https=)
TW (5) TWI842517B (https=)
WO (1) WO2020016087A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102796031B1 (ko) * 2018-07-17 2025-04-16 에이에스엠엘 네델란즈 비.브이. 입자 빔 검사 장치
JP7472114B2 (ja) 2018-09-28 2024-04-22 ラム リサーチ コーポレーション 堆積副生成物の蓄積からの真空ポンプの保護
EP3916482A1 (en) * 2020-05-27 2021-12-01 ASML Netherlands B.V. Conditioning device and corresponding object handler, stage apparatus and lithographic apparatus
JP2023538840A (ja) * 2020-08-21 2023-09-12 エーエスエムエル ネザーランズ ビー.ブイ. 荷電粒子検査装置
JP7249989B2 (ja) * 2020-12-16 2023-03-31 日本電子株式会社 荷電粒子線装置
US11892382B2 (en) * 2021-08-27 2024-02-06 Taiwan Semiconductor Manufacturing Company Ltd. Method for detecting environmental parameter in semiconductor fabrication facility
WO2023110244A1 (en) 2021-12-15 2023-06-22 Asml Netherlands B.V. Charged particle assessment system
EP4213176A1 (en) 2022-01-13 2023-07-19 ASML Netherlands B.V. Charged particle assessment system
KR20240161114A (ko) * 2022-03-11 2024-11-12 에이에스엠엘 네델란즈 비.브이. 온도 컨디셔닝 플레이트를 포함한 진공 챔버 시스템
CN119404299A (zh) * 2022-08-05 2025-02-07 Asml荷兰有限公司 高生产量装载锁定腔室
CN115020308B (zh) * 2022-08-08 2022-11-22 上海果纳半导体技术有限公司武汉分公司 晶圆传输装置、设备平台系统及其晶圆传输方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222099A (ja) 2000-02-10 2001-08-17 Toshiba Corp 荷電ビーム描画装置および荷電ビーム描画方法
KR200231865Y1 (ko) 1998-10-17 2001-10-25 김영환 반도체증착장비용로드락챔버의이물질증착방지장치
JP2009124142A (ja) 2007-11-15 2009-06-04 Asml Netherlands Bv 基板処理装置およびデバイス製造方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0155572B1 (ko) * 1991-05-28 1998-12-01 이노우에 아키라 감압처리 시스템 및 감압처리 방법
JP3225170B2 (ja) * 1993-10-22 2001-11-05 東京エレクトロン株式会社 真空処理装置
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US6375746B1 (en) * 1998-07-10 2002-04-23 Novellus Systems, Inc. Wafer processing architecture including load locks
US6110232A (en) * 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
US6402401B1 (en) * 1999-10-19 2002-06-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
KR20030032034A (ko) * 2000-09-15 2003-04-23 어플라이드 머티어리얼스, 인코포레이티드 처리 장비용 두 개의 이중 슬롯 로드록
JP4553471B2 (ja) * 2000-09-19 2010-09-29 東京エレクトロン株式会社 処理装置及び処理システム
JP2002151569A (ja) * 2000-11-14 2002-05-24 Tokyo Electron Ltd 基板処理装置
JP2003152046A (ja) * 2001-08-31 2003-05-23 Tdk Corp 真空処理装置及び被処理物の製造方法
SG115630A1 (en) * 2003-03-11 2005-10-28 Asml Netherlands Bv Temperature conditioned load lock, lithographic apparatus comprising such a load lock and method of manufacturing a substrate with such a load lock
JP4194495B2 (ja) * 2004-01-07 2008-12-10 東京エレクトロン株式会社 塗布・現像装置
US20050284572A1 (en) * 2004-06-29 2005-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Heating system for load-lock chamber
US9305814B2 (en) * 2004-12-20 2016-04-05 Tokyo Electron Limited Method of inspecting substrate processing apparatus and storage medium storing inspection program for executing the method
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置,処理システム及び処理方法
JP4619854B2 (ja) 2005-04-18 2011-01-26 東京エレクトロン株式会社 ロードロック装置及び処理方法
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
JP5036290B2 (ja) * 2006-12-12 2012-09-26 東京エレクトロン株式会社 基板処理装置および基板搬送方法、ならびにコンピュータプログラム
KR100855325B1 (ko) * 2006-12-27 2008-09-04 세메스 주식회사 로드락 챔버, 기판 처리 장치 및 기판 처리 방법
US8905124B2 (en) * 2007-06-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature controlled loadlock chamber
JP2009123723A (ja) * 2007-11-12 2009-06-04 Hitachi High-Technologies Corp 真空処理装置または真空処理方法
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
JP5391055B2 (ja) * 2009-12-25 2014-01-15 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置の製造システム
JP5552826B2 (ja) * 2010-02-10 2014-07-16 株式会社ニコン 基板貼り合せ装置、積層半導体装置製造方法及び積層半導体装置
US8808788B2 (en) * 2010-09-20 2014-08-19 Tokyo Electron Limited Processing a wafer with a post application bake (PAB) procedure
TWI550686B (zh) * 2011-11-04 2016-09-21 東京威力科創股份有限公司 基板處理系統、基板運送方法及電腦記憶媒體
TWI524456B (zh) * 2011-11-04 2016-03-01 東京威力科創股份有限公司 基板處理系統、基板運送方法、程式及電腦記憶媒體
JP5973731B2 (ja) 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US9378994B2 (en) * 2013-03-15 2016-06-28 Applied Materials, Inc. Multi-position batch load lock apparatus and systems and methods including same
JP6108643B2 (ja) * 2013-07-09 2017-04-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、及び異常処理プログラム
KR101846850B1 (ko) * 2013-09-30 2018-04-09 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치, 기판 처리 시스템 및 기록 매체
JP6293645B2 (ja) * 2013-12-27 2018-03-14 東京エレクトロン株式会社 基板処理システム
CN108028193B (zh) * 2015-09-30 2022-04-22 东京毅力科创株式会社 基板处理装置和基板处理方法
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
US10714362B2 (en) * 2018-03-15 2020-07-14 Kokusai Electric Corporation Substrate processing apparatus and method of manufacturing semiconductor device
EP3575873A1 (en) 2018-05-28 2019-12-04 ASML Netherlands B.V. Particle beam apparatus
KR102796031B1 (ko) * 2018-07-17 2025-04-16 에이에스엠엘 네델란즈 비.브이. 입자 빔 검사 장치
US10896821B2 (en) * 2018-09-28 2021-01-19 Lam Research Corporation Asymmetric wafer bow compensation by physical vapor deposition
CN112970089A (zh) * 2018-11-06 2021-06-15 Asml荷兰有限公司 用于在带电粒子束设备中对晶片进行热调节的系统和方法
JP7188256B2 (ja) * 2019-04-18 2022-12-13 株式会社Sumco 気相成長方法及び気相成長装置
US11440117B2 (en) * 2019-09-27 2022-09-13 Jian Zhang Multiple module chip manufacturing arrangement
US11581204B2 (en) * 2020-10-20 2023-02-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200231865Y1 (ko) 1998-10-17 2001-10-25 김영환 반도체증착장비용로드락챔버의이물질증착방지장치
JP2001222099A (ja) 2000-02-10 2001-08-17 Toshiba Corp 荷電ビーム描画装置および荷電ビーム描画方法
JP2009124142A (ja) 2007-11-15 2009-06-04 Asml Netherlands Bv 基板処理装置およびデバイス製造方法

Also Published As

Publication number Publication date
KR20210022068A (ko) 2021-03-02
TWI879378B (zh) 2025-04-01
JP2023073317A (ja) 2023-05-25
US20200027763A1 (en) 2020-01-23
TW202531455A (zh) 2025-08-01
US20240258138A1 (en) 2024-08-01
KR20240024306A (ko) 2024-02-23
TW202349541A (zh) 2023-12-16
JP7296410B2 (ja) 2023-06-22
JP2021530865A (ja) 2021-11-11
TW202211349A (zh) 2022-03-16
US11942340B2 (en) 2024-03-26
TW202018755A (zh) 2020-05-16
US11430678B2 (en) 2022-08-30
TWI738028B (zh) 2021-09-01
TW202433637A (zh) 2024-08-16
CN118737894A (zh) 2024-10-01
KR20240024307A (ko) 2024-02-23
TWI842517B (zh) 2024-05-11
KR20250057069A (ko) 2025-04-28
WO2020016087A1 (en) 2020-01-23
US20250336696A1 (en) 2025-10-30
US20220415678A1 (en) 2022-12-29
JP7608500B2 (ja) 2025-01-06
CN112424922A (zh) 2021-02-26
US12354891B2 (en) 2025-07-08
TWI824271B (zh) 2023-12-01
KR102790227B1 (ko) 2025-04-03
JP2025041727A (ja) 2025-03-26

Similar Documents

Publication Publication Date Title
KR102796031B1 (ko) 입자 빔 검사 장치
TWI806745B (zh) 在帶電粒子束設備中熱調節晶圓之系統和方法
TW202401476A (zh) 包括溫度調節板之真空腔室系統
TW202527018A (zh) 真空原位晶圓溫度量測方法及設備

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000