TWI830812B - 基板處理之條件設定支援方法、基板處理系統、記錄媒體及學習模型 - Google Patents

基板處理之條件設定支援方法、基板處理系統、記錄媒體及學習模型 Download PDF

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Publication number
TWI830812B
TWI830812B TW108140899A TW108140899A TWI830812B TW I830812 B TWI830812 B TW I830812B TW 108140899 A TW108140899 A TW 108140899A TW 108140899 A TW108140899 A TW 108140899A TW I830812 B TWI830812 B TW I830812B
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Taiwan
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processing
substrate
unit
substrate processing
conditions
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TW108140899A
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Chinese (zh)
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TW202024942A (zh
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下青木剛
桾本裕一朗
濱田佳志
羽山隆史
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Molecular Biology (AREA)
  • Artificial Intelligence (AREA)
  • Health & Medical Sciences (AREA)
  • Biophysics (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Automation & Control Theory (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW108140899A 2018-11-21 2019-11-12 基板處理之條件設定支援方法、基板處理系統、記錄媒體及學習模型 TWI830812B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018218375 2018-11-21
JP2018-218375 2018-11-21

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TW202024942A TW202024942A (zh) 2020-07-01
TWI830812B true TWI830812B (zh) 2024-02-01

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TW108140899A TWI830812B (zh) 2018-11-21 2019-11-12 基板處理之條件設定支援方法、基板處理系統、記錄媒體及學習模型

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JP (2) JPWO2020105517A1 (ja)
KR (1) KR20210092238A (ja)
CN (1) CN112997274A (ja)
TW (1) TWI830812B (ja)
WO (1) WO2020105517A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023120961A (ja) 2022-02-18 2023-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理条件の設定方法、基板処理方法、基板処理条件の設定システム、及び、基板処理システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04131930U (ja) * 1991-05-28 1992-12-04 山形日本電気株式会社 フオトレジスト塗布装置
TWI260746B (en) * 2002-09-25 2006-08-21 Sharp Kk Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
US20100081285A1 (en) * 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US20110279797A1 (en) * 2009-09-28 2011-11-17 Semiconductor Manufacturing International (Shanghai) Corporation Apparatus and method for calibrating lithography process
TWI409658B (zh) * 2008-03-31 2013-09-21 Tokyo Electron Ltd 多層／多輸入／多輸出模型及其使用方法

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JP2007088485A (ja) * 2001-12-25 2007-04-05 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2003234280A (ja) * 2002-02-08 2003-08-22 Dainippon Screen Mfg Co Ltd 基板処理ユニットおよび基板処理装置
JP4170643B2 (ja) * 2002-03-14 2008-10-22 大日本スクリーン製造株式会社 基板処理装置
US8014991B2 (en) * 2003-09-30 2011-09-06 Tokyo Electron Limited System and method for using first-principles simulation to characterize a semiconductor manufacturing process
JP2007317068A (ja) * 2006-05-29 2007-12-06 Osaka Prefecture Univ リコメンド装置およびリコメンドシステム
JP4464979B2 (ja) * 2007-03-05 2010-05-19 東京エレクトロン株式会社 処理システム、処理方法、及び、プログラム
JP2010034180A (ja) * 2008-07-28 2010-02-12 Toshiba Corp 半導体製造装置の制御方法および半導体装置の製造方法
JP2011071296A (ja) * 2009-09-25 2011-04-07 Sharp Corp 特性予測装置、特性予測方法、特性予測プログラムおよびプログラム記録媒体
JP5336441B2 (ja) * 2010-08-24 2013-11-06 東京エレクトロン株式会社 液処理装置及び液処理方法
JP5314657B2 (ja) * 2010-11-12 2013-10-16 東京エレクトロン株式会社 ノズルの位置調整方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
US9075318B2 (en) * 2012-03-07 2015-07-07 Tokyo Electron Limited Sequential stage mixing for a resist batch strip process
JP6332095B2 (ja) * 2015-03-20 2018-05-30 東京エレクトロン株式会社 薬液供給装置の調整方法、記憶媒体及び薬液供給装置
JP6352230B2 (ja) 2015-10-09 2018-07-04 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
US10048594B2 (en) * 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
JP6584352B2 (ja) * 2016-03-24 2019-10-02 東京エレクトロン株式会社 制御装置、基板処理システム、基板処理方法及びプログラム
JP6541599B2 (ja) * 2016-03-28 2019-07-10 東京エレクトロン株式会社 制御装置、基板処理システム、基板処理方法及びプログラム
EP3291007A1 (en) * 2016-08-30 2018-03-07 ASML Netherlands B.V. Patterning stack optimization
JP7024307B2 (ja) * 2017-01-26 2022-02-24 東京エレクトロン株式会社 塗布膜除去装置、塗布膜除去方法及び記憶媒体
JP6769335B2 (ja) * 2017-02-22 2020-10-14 東京エレクトロン株式会社 処理レシピの評価方法、記憶媒体、処理レシピ評価用の支援装置、及び液処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04131930U (ja) * 1991-05-28 1992-12-04 山形日本電気株式会社 フオトレジスト塗布装置
TWI260746B (en) * 2002-09-25 2006-08-21 Sharp Kk Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
TWI409658B (zh) * 2008-03-31 2013-09-21 Tokyo Electron Ltd 多層／多輸入／多輸出模型及其使用方法
US20100081285A1 (en) * 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US20110279797A1 (en) * 2009-09-28 2011-11-17 Semiconductor Manufacturing International (Shanghai) Corporation Apparatus and method for calibrating lithography process

Also Published As

Publication number Publication date
JPWO2020105517A1 (ja) 2021-09-30
KR20210092238A (ko) 2021-07-23
CN112997274A (zh) 2021-06-18
JP2023171555A (ja) 2023-12-01
WO2020105517A1 (ja) 2020-05-28
TW202024942A (zh) 2020-07-01

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