TWI830812B - Substrate processing condition setting support method, substrate processing system, storage medium, and learning model - Google Patents

Substrate processing condition setting support method, substrate processing system, storage medium, and learning model Download PDF

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TWI830812B
TWI830812B TW108140899A TW108140899A TWI830812B TW I830812 B TWI830812 B TW I830812B TW 108140899 A TW108140899 A TW 108140899A TW 108140899 A TW108140899 A TW 108140899A TW I830812 B TWI830812 B TW I830812B
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substrate
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conditions
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TW202024942A (en
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下青木剛
桾本裕一朗
濱田佳志
羽山隆史
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract

An object of the invention is to provide a condition setting support method which is effective for simplifying the task of setting processing conditions for substrate processing. The substrate processing condition setting support method includes a step of inputting, into a machine learning device, a data set that contains processing conditions for substrate processing performed by a substrate processing device including the supply of a process liquid to the substrate and also contains results data related to the quality of the substrate processing, and a step of deriving recommended processing conditions for substrate processing based on a learning model which is generated by the machine learning device using machine learning based on multiple data sets and which outputs prediction data related to the quality of substrate processing according to the input processing conditions.

Description

基板處理之條件設定支援方法、基板處理系統、記錄媒體及學習模型Substrate processing condition setting support method, substrate processing system, recording medium and learning model

本發明所揭露之內容,係關於一種基板處理之條件設定支援方法、基板處理系統、記錄媒體及學習模型。 The content disclosed in the present invention relates to a substrate processing condition setting support method, a substrate processing system, a recording medium and a learning model.

於專利文獻1揭露一種裝置,於基板之表面形成感光性被覆膜,在該感光性被覆膜之曝光處理後,施行該感光性被覆膜之顯影處理。 Patent Document 1 discloses a device that forms a photosensitive coating film on the surface of a substrate, and performs a development process on the photosensitive coating film after the exposure process of the photosensitive coating film.

[習知技術文獻] [Known technical documents]

[專利文獻] [Patent Document]

專利文獻1:日本特開第2017-73522號公報 Patent Document 1: Japanese Patent Application Publication No. 2017-73522

本發明所揭露之內容提供一種條件設定支援方法,對基板處理的處理條件之設定作業的簡化有效。 The disclosure of the present invention provides a condition setting support method, which is effective in simplifying the setting operation of processing conditions for substrate processing.

本發明所揭露之一態樣的基板處理之條件設定支援方法,包含如下步驟:將包含藉由基板處理裝置實行之基板處理(包括對於基板之處理液的供給)的處理條件、及關於該基板處理之品質的實績資料之資料集,輸入至機械學習裝置;以及根據「機械學習裝置藉由『根據複數組該資料集的機械學習』所產生之模型,即因應處理條件之輸入而將關於基板處理之品質的預測資料輸出之學習模型」,導出基板處理的推薦處理條件。 A condition setting support method for substrate processing according to one aspect of the present invention includes the following steps: setting processing conditions including substrate processing (including supply of processing liquid to the substrate) performed by a substrate processing device, and information about the substrate. The data set of the actual performance data of the processing quality is input to the machine learning device; and based on the model generated by the "machine learning device through machine learning based on the plurality of data sets", that is, in response to the input of the processing conditions, the information about the substrate is "Learning model for predicting data output of processing quality" to derive recommended processing conditions for substrate processing.

依本發明所揭露之內容,可提供一種條件設定支援方法,對基板處理的處理條件之設定作業的簡化有效。 According to the disclosure of the present invention, a condition setting support method can be provided, which is effective in simplifying the setting operation of processing conditions for substrate processing.

1:基板處理系統 1:Substrate processing system

2:塗布顯影裝置(基板處理裝置) 2: Coating and developing device (substrate processing device)

3:曝光裝置 3: Exposure device

4:載送區塊 4: Transport block

5:處理區塊 5: Processing blocks

6:介面區塊 6:Interface block

7:條件設定系統 7:Condition setting system

11,12,13,14:處理模組(處理部) 11,12,13,14: Processing module (processing department)

20,50:旋轉保持部 20,50: Rotation holding part

21,51,83:保持部 21,51,83:Maintenance Department

22,52:旋轉驅動部 22,52: Rotary drive unit

30:顯影液供給部 30:Developer supply part

31,41,61:噴嘴 31,41,61:Nozzle

32,42:噴嘴移送部 32,42: Nozzle transfer part

33,43,62:液體源 33,43,62:Liquid source

40:沖洗液供給部 40: Flushing fluid supply part

60:成膜液供給部 60: Film-forming fluid supply department

70:品質檢查裝置 70:Quality inspection device

80:處理後檢查部 80: Post-processing inspection department

81,95,96,97:拍攝部 81,95,96,97:Photography Department

82:投射反射部 82: Projection reflection part

84:線性驅動部 84: Linear drive department

86:半反射鏡 86:Half mirror

87:光源 87:Light source

90:處理中檢查部 90: Processing Inspection Department

91:液體飛濺檢測部 91: Liquid splash detection department

92:液體形成狀態檢測部 92: Liquid formation state detection part

93:液體滴落檢測部 93: Liquid drop detection department

94:照射部 94: Irradiation Department

100:控制裝置 100:Control device

111:處理條件保存部 111: Processing condition storage department

112:處理控制部 112: Processing Control Department

113:資料取得部 113:Data Acquisition Department

114:資料輸入部 114:Data Entry Department

115:推薦條件導出部 115: Recommendation conditions derivation department

116:條件評價部 116: Condition Evaluation Department

117:重複管理部 117: Duplicate Management Department

118:實績資料修正部 118:Performance Data Correction Department

121:評價條件輸入部 121: Evaluation condition input part

122:搜尋結果取得部 122:Search result acquisition department

190,290:電路 190,290:Circuit

191,291:處理器 191,291:processor

192,292:記憶體 192,292: memory

193,293:儲存器 193,293: storage

194:顯示裝置 194:Display device

195:輸入裝置 195:Input device

196:輸出入埠 196:Input/output port

197,294:通訊埠 197,294: Communication port

200:機械學習裝置 200: Mechanical learning device

211:搜尋運算部 211: Search Operation Department

212:資料取得部 212:Data Acquisition Department

213:資料保存部 213:Data Storage Department

214:模型產生部 214: Model Generation Department

215:模型保存部 215: Model Preservation Department

216:條件搜尋部 216:Condition search department

A1,A8:傳遞臂 A1,A8: transfer arm

A3:搬運臂 A3: Carrying arm

A7:升降臂 A7:Lifting arm

C:載具 C:Vehicle

S01~S09,S11~S14,S21~S28,S31~S39,S41,S51~S58:步驟 S01~S09, S11~S14, S21~S28, S31~S39, S41, S51~S58: Steps

U1:塗布單元 U1: coating unit

U2,U4:熱處理單元 U2, U4: heat treatment unit

U3:顯影單元 U3:Developing unit

U10,U11:收納部 U10,U11: Storage Department

W:晶圓 W:wafer

Wa:表面 Wa: surface

圖1係顯示一例示實施形態之基板處理系統的構成之示意圖。 FIG. 1 is a schematic diagram showing the structure of a substrate processing system according to an exemplary embodiment.

圖2係例示塗布單元的概略構成之示意圖。 FIG. 2 is a schematic diagram illustrating the schematic configuration of a coating unit.

圖3係例示顯影單元的概略構成之示意圖。 FIG. 3 is a schematic diagram illustrating the schematic structure of the developing unit.

圖4係例示處理後檢查裝置的概略構成之示意圖。 FIG. 4 is a schematic diagram illustrating the schematic configuration of the post-process inspection device.

圖5係例示處理中檢查裝置的概略構成之示意圖。 FIG. 5 is a schematic diagram illustrating the schematic configuration of the inspection device during processing.

圖6係例示控制裝置及機械學習裝置的功能性構成之方塊圖。 FIG. 6 is a block diagram illustrating the functional configuration of the control device and the machine learning device.

圖7係例示控制裝置及機械學習裝置的硬體構成之方塊圖。 FIG. 7 is a block diagram illustrating the hardware configuration of the control device and the machine learning device.

圖8係例示控制裝置所實行的條件設定支援順序之流程圖。 FIG. 8 is a flowchart illustrating a condition setting support procedure executed by the control device.

圖9係例示控制裝置所進一步實行的條件設定支援順序之流程圖。 FIG. 9 is a flowchart illustrating a condition setting support procedure further executed by the control device.

圖10係例示機械學習裝置所實行的條件設定支援順序之流程圖。 FIG. 10 is a flowchart illustrating the condition setting support procedure executed by the machine learning device.

圖11係例示機械學習裝置所進一步實行的條件設定支援順序之流程圖。 FIG. 11 is a flowchart illustrating a condition setting support procedure further executed by the machine learning device.

以下,對各種例示實施形態予以說明。於說明中,對同一要素或具有同一功能之要素給予同一符號,並省略重複的說明。 Various exemplary embodiments will be described below. In the description, the same elements or elements with the same function are given the same symbols, and repeated explanations are omitted.

[基板處理系統] [Substrate processing system]

基板處理系統1,係在基板的表面形成感光性被覆膜,對曝光處理後之該感光性被覆膜施行顯影處理的系統。處理對象之基板,為例如半導體之晶圓W。感光性被覆膜,例如為光阻膜。 The substrate processing system 1 is a system that forms a photosensitive coating film on the surface of a substrate and develops the photosensitive coating film after exposure processing. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating film is, for example, a photoresist film.

如圖1所例示,基板處理系統1,具備塗布顯影裝置2及控制裝置100。塗布顯影裝置2,具備載送區塊4、處理區塊5、及介面區塊6。 As illustrated in FIG. 1 , the substrate processing system 1 includes a coating and developing device 2 and a control device 100 . The coating and developing device 2 includes a carrying block 4, a processing block 5, and an interface block 6.

載送區塊4,施行晶圓W(基板)之往塗布顯影裝置2內的導入、及晶圓W之從塗布顯影裝置2內的導出。例如,載送區塊4,可支持晶圓W用之複數載具C,內建有傳遞臂A1。載具C,例如收納圓形的複數片晶圓W。傳遞臂A1,從載具C取出未處理之晶圓W,使處理後之晶圓W返回載具C。 The carrying block 4 carries out the introduction of the wafer W (substrate) into the coating and developing device 2 and the removal of the wafer W from the coating and developing device 2 . For example, the carrying block 4 can support a plurality of carriers C for the wafer W and has a built-in transfer arm A1. The carrier C stores, for example, a plurality of circular wafers W. The transfer arm A1 takes out the unprocessed wafer W from the carrier C and returns the processed wafer W to the carrier C.

處理區塊5,具備複數處理模組11、12、13、14。處理模組11、12、13(處理部),施行成膜處理:於晶圓W的表面Wa塗布成膜液(成膜用處理液),形成被覆膜。例如處理模組11、12、13,內建有:塗布單元U1、熱處理單元U2、及將晶圓W搬運至此等單元之搬運臂A3。 The processing block 5 is provided with a plurality of processing modules 11, 12, 13, and 14. The processing modules 11, 12, and 13 (processing units) perform film formation processing: coating a film-forming liquid (film-forming processing liquid) on the surface Wa of the wafer W to form a coating film. For example, the processing modules 11, 12, and 13 are built with a coating unit U1, a heat treatment unit U2, and a transfer arm A3 that transfers the wafer W to these units.

處理模組11,藉由塗布單元U1及熱處理單元U2,於晶圓W的表面上形成下層膜。處理模組11的塗布單元U1,將下層膜形成用處理液塗布於晶圓W上。處理模組11的熱處理單元U2,施行伴隨下層膜之形成的各種熱處理。 The processing module 11 forms an underlying film on the surface of the wafer W through the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 11 applies the processing liquid for forming the lower layer film on the wafer W. The heat treatment unit U2 of the treatment module 11 performs various heat treatments accompanying the formation of the underlying film.

處理模組12,藉由塗布單元U1及熱處理單元U2,於下層膜上形成光阻膜。處理模組12的塗布單元U1,將光阻膜形成用處理液塗布於下層膜上。處理模組12的熱處理單元U2,施行伴隨光阻膜之形成的各種熱處理。 The processing module 12 forms a photoresist film on the lower film through the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 applies the processing liquid for forming the photoresist film on the underlying film. The heat treatment unit U2 of the processing module 12 performs various heat treatments accompanying the formation of the photoresist film.

處理模組13,藉由塗布單元U1及熱處理單元U2,於光阻膜上形成上層膜。處理模組13的塗布單元U1,將上層膜形成用之液體塗布於光阻膜上。處理模組13的熱處理單元U2,施行伴隨上層膜之形成的各種熱處理。 The processing module 13 forms an upper layer film on the photoresist film through the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 applies the liquid for forming the upper layer film on the photoresist film. The heat treatment unit U2 of the treatment module 13 performs various heat treatments accompanying the formation of the upper layer film.

如圖2所例示,塗布單元U1,具備旋轉保持部50及成膜液供給部60。旋轉保持部50,保持晶圓W而使其旋轉。例如,旋轉保持部50,具備保持部51及旋轉驅動部52。保持部51,支持水平配置之晶圓W,例如藉由真空吸附等而保持。旋轉驅動部52,例如將電動馬達等作為動力源,使保持部51繞鉛直的軸線而旋轉。藉此,保持在保持部51之晶圓W亦旋轉。 As illustrated in FIG. 2 , the coating unit U1 includes a rotation holding unit 50 and a film-forming liquid supply unit 60 . The rotation holding unit 50 holds the wafer W and rotates it. For example, the rotation holding part 50 includes a holding part 51 and a rotation driving part 52 . The holding portion 51 supports the horizontally arranged wafer W, and holds the wafer W by, for example, vacuum suction. The rotation drive unit 52 uses, for example, an electric motor or the like as a power source to rotate the holding unit 51 around a vertical axis. Thereby, the wafer W held by the holding part 51 also rotates.

成膜液供給部60,將成膜液供給至保持在保持部51之晶圓W的表面Wa。例如,成膜液供給部60,具備噴嘴61及液體源62。噴嘴61,配置於保持在保持部51之晶圓W的上方,往下方噴吐處理液。液體源62,將處理液壓送至噴嘴61。 The film-forming liquid supply unit 60 supplies the film-forming liquid to the surface Wa of the wafer W held by the holding unit 51 . For example, the film-forming liquid supply unit 60 includes a nozzle 61 and a liquid source 62 . The nozzle 61 is arranged above the wafer W held by the holding part 51 and sprays the processing liquid downward. The liquid source 62 sends the processing hydraulic pressure to the nozzle 61 .

回到圖1,處理模組14(處理部),施行顯影處理:將顯影用處理液供給至晶圓W的表面Wa中施行過曝光處理的光阻膜(感光性被覆膜)。例如,處理模組14,內建有:顯影單元U3、熱處理單元U4、及將晶圓W搬運至此等單元之搬運臂A3。處理模組14,藉由顯影單元U3及熱處理單元U4,施行曝光後的光阻膜之顯影處理。顯影單元U3,在對曝光完畢之晶圓W的表面上塗布顯影液(顯影用處理液)後,將其以沖洗液(沖洗用處理液)洗去,藉以施行光阻膜之顯影處理。熱處理單元U4,施行伴隨顯影處理之各種熱處理。作為熱處理的具體例,可列舉顯影處理前之加熱處理(PEB:Post Exposure Bake)、顯影處理後之加熱處理(PB:Post Bake)等。 Returning to FIG. 1 , the processing module 14 (processing unit) performs a development process: a development treatment liquid is supplied to the overexposed photoresist film (photosensitive coating film) on the surface Wa of the wafer W. For example, the processing module 14 includes a developing unit U3, a heat treatment unit U4, and a transport arm A3 for transporting the wafer W to these units. The processing module 14 performs development processing on the exposed photoresist film through the developing unit U3 and the heat treatment unit U4. The developing unit U3 applies a developer solution (a treatment liquid for development) to the surface of the exposed wafer W, and then washes it away with a rinse liquid (a treatment liquid for rinse), thereby performing development treatment of the photoresist film. The heat treatment unit U4 performs various heat treatments accompanying the development process. Specific examples of the heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

如圖3所例示,顯影單元U3,具備:旋轉保持部20、顯影液供給部30、及沖洗液供給部40。旋轉保持部20,保持晶圓W而使其旋轉。例如,旋轉保持部20,具備保持部21及旋轉驅動部22。保持部21,支持水平配置之晶圓W,例如藉由真空吸附等而保持。旋轉驅動部22,例如將電動馬達等作為動力源,使保持部21繞鉛直的軸線而旋轉。藉此,保持在保持部21之晶圓W亦旋轉。 As illustrated in FIG. 3 , the developing unit U3 includes a rotation holding unit 20 , a developer supply unit 30 , and a rinse liquid supply unit 40 . The rotation holding unit 20 holds and rotates the wafer W. For example, the rotation holding part 20 includes a holding part 21 and a rotation driving part 22. The holding portion 21 supports the horizontally arranged wafer W, and holds the wafer W by, for example, vacuum suction. The rotation drive unit 22 uses, for example, an electric motor or the like as a power source to rotate the holding unit 21 around a vertical axis. Thereby, the wafer W held by the holding part 21 also rotates.

顯影液供給部30,將顯影液供給至保持在保持部21之晶圓W的表面Wa。例如,顯影液供給部30,具備:噴嘴31、噴嘴移送部32、及液體源33。噴嘴31,配置於保持在保持部21之晶圓W的上方,往下方噴吐顯影液。噴嘴移送部32, 將電動馬達等作為動力源而使噴嘴31往水平方向移動。液體源33,將顯影液壓送至噴嘴31。 The developer supply unit 30 supplies the developer to the surface Wa of the wafer W held by the holding unit 21 . For example, the developer supply unit 30 includes a nozzle 31 , a nozzle transfer unit 32 , and a liquid source 33 . The nozzle 31 is arranged above the wafer W held by the holding part 21 and sprays the developer downward. Nozzle transfer part 32, An electric motor or the like is used as a power source to move the nozzle 31 in the horizontal direction. The liquid source 33 sends the developing hydraulic pressure to the nozzle 31 .

沖洗液供給部40,將沖洗液供給至保持在保持部21之晶圓W的表面Wa。例如,沖洗液供給部40,具備:噴嘴41、噴嘴移送部42、及液體源43。噴嘴41,配置於保持在保持部21之晶圓W的上方,往下方噴吐沖洗液。噴嘴移送部42,將電動馬達等作為動力源而使噴嘴41往水平方向移動。液體源43,將沖洗液壓送至噴嘴41。 The rinse liquid supply unit 40 supplies the rinse liquid to the surface Wa of the wafer W held by the holding unit 21 . For example, the flushing liquid supply unit 40 includes a nozzle 41 , a nozzle transfer unit 42 , and a liquid source 43 . The nozzle 41 is arranged above the wafer W held by the holder 21 and sprays the rinse liquid downward. The nozzle transfer unit 42 uses an electric motor or the like as a power source to move the nozzle 41 in the horizontal direction. The liquid source 43 sends flushing hydraulic pressure to the nozzle 41 .

回到圖1,介面區塊6,在與施行形成於晶圓W上的光阻膜之曝光處理的曝光裝置(未圖示)之間,施行晶圓W的傳遞。例如,介面區塊6,內建有傳遞臂A8,連接至曝光裝置。傳遞臂A8,將曝光處理前之晶圓W往曝光裝置傳遞,從曝光裝置承接曝光處理後之晶圓W。 Returning to FIG. 1 , the interface block 6 transfers the wafer W between the wafer W and the exposure device (not shown) that performs the exposure process of the photoresist film formed on the wafer W. For example, the interface block 6 has a built-in transfer arm A8 connected to the exposure device. The transfer arm A8 transfers the wafer W before exposure processing to the exposure device, and receives the wafer W after exposure processing from the exposure device.

在處理區塊5與載送區塊4之間,設置收納部U10。收納部U10,區隔為在上下方向並排之複數小單元,可於各小單元收納晶圓W。收納部U10,使用在載送區塊4與處理區塊5間之晶圓W的傳遞等。在收納部U10之附近,設置升降臂A7。升降臂A7,於收納部U10的小單元彼此之間,使晶圓W升降。在處理區塊5與介面區塊6之間,設置收納部U11。收納部U11,亦區隔為在上下方向並排之複數小單元,可於各小單元收納晶圓W。收納部U11,使用在處理區塊5與介面區塊6間之晶圓W的傳遞等。 Between the processing block 5 and the carrying block 4, a storage unit U10 is provided. The storage part U10 is divided into a plurality of small units arranged side by side in the up and down direction, and the wafer W can be stored in each small unit. The storage unit U10 is used for transferring the wafer W between the carrying block 4 and the processing block 5 . A lifting arm A7 is provided near the storage part U10. The lifting arm A7 lifts and lowers the wafer W between the small units of the storage unit U10. Between the processing block 5 and the interface block 6, a storage portion U11 is provided. The storage part U11 is also divided into a plurality of small units arranged side by side in the up and down direction, and the wafer W can be stored in each small unit. The storage unit U11 is used for transferring the wafer W between the processing block 5 and the interface block 6 .

控制裝置100,例如控制塗布顯影裝置2,俾藉由以下順序實行塗布顯影處理。首先,控制裝置100,控制傳遞臂A1俾將載具C內之晶圓W搬運至收納部U10,控制升降臂A7俾將此晶圓W配置於處理模組11用之小單元。 The control device 100 controls, for example, the coating and developing device 2 so that the coating and developing process is performed in the following sequence. First, the control device 100 controls the transfer arm A1 to transport the wafer W in the carrier C to the storage unit U10, and controls the lifting arm A7 to place the wafer W in the small unit for the processing module 11.

接著,控制裝置100,控制搬運臂A3俾將收納部U10之晶圓W搬運至處理模組11內的塗布單元U1及熱處理單元U2。此外,控制裝置100,控制塗布單元U1及熱處理單元U2,俾於此晶圓W的表面上形成下層膜。而後,控制裝置100,控制搬運臂A3俾使形成有下層膜之晶圓W返回收納部U10,控制升降臂A7俾將此晶圓W配置於處理模組12用之小單元。 Next, the control device 100 controls the transport arm A3 to transport the wafer W in the storage unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11 . In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an underlying film on the surface of the wafer W. Then, the control device 100 controls the transfer arm A3 to return the wafer W with the underlying film to the storage unit U10 , and controls the lifting arm A7 to place the wafer W in the small unit for the processing module 12 .

接著,控制裝置100,控制搬運臂A3俾將收納部U10之晶圓W搬運至處理模組12內的塗布單元U1及熱處理單元U2。此外,控制裝置100,控制塗布單元U1及熱處理單元U2俾於此晶圓W的下層膜上形成光阻膜。而後,控制裝置100,控制搬運臂A3俾使晶圓W返回收納部U10,控制升降臂A7俾將此晶圓W配置於處理模組13用之小單元。 Next, the control device 100 controls the transport arm A3 to transport the wafer W in the storage unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12 . In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a photoresist film on the lower film of the wafer W. Then, the control device 100 controls the transfer arm A3 to return the wafer W to the storage unit U10 and controls the lifting arm A7 to place the wafer W in the small unit for the processing module 13 .

接著,控制裝置100,控制搬運臂A3俾將收納部U10之晶圓W搬運至處理模組13內之各單元。此外,控制裝置100,控制塗布單元U1及熱處理單元U2俾於此晶圓W的光阻膜上形成上層膜。而後,控制裝置100,控制搬運臂A3俾將晶圓W搬運至收納部U11。 Next, the control device 100 controls the transport arm A3 to transport the wafer W in the storage unit U10 to each unit in the processing module 13 . In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the photoresist film of the wafer W. Then, the control device 100 controls the transport arm A3 to transport the wafer W to the storage unit U11.

接著,控制裝置100,控制傳遞臂A8俾將收納部U11之晶圓W往曝光裝置3送出。而後,控制裝置100,控制傳遞臂A8,俾從曝光裝置3接收施行過曝光處理之晶圓W,將其配置於收納部U11的處理模組14用之小單元。 Next, the control device 100 controls the transfer arm A8 to send the wafer W in the storage part U11 to the exposure device 3 . Then, the control device 100 controls the transfer arm A8 to receive the overexposed wafer W from the exposure device 3 and arrange it in the small unit for the processing module 14 of the storage unit U11.

接著,控制裝置100,控制搬運臂A3俾將收納部U11之晶圓W搬運至處理模組14內之各單元,控制顯影單元U3及熱處理單元U4俾對此晶圓W的光阻膜施行顯影處理。而後,控制裝置100,控制搬運臂A3俾使晶圓W返回收納部U10,控制升降臂A7及傳遞臂A1俾使此晶圓W返回載具C內。藉由上述方式,完成塗布顯影處理。 Next, the control device 100 controls the transport arm A3 to transport the wafer W in the storage unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to develop the photoresist film of the wafer W. handle. Then, the control device 100 controls the transfer arm A3 to return the wafer W to the storage unit U10, and controls the lifting arm A7 and the transfer arm A1 to return the wafer W to the carrier C. In the above manner, the coating and development process is completed.

另,基板處理系統之具體構成,並未限定於以上所例示之型態。基板處理系統,只要是具備:施行包含「對於基板之處理液的供給」之基板處理的處理部;及可控制該處理部的控制裝置100的任何構成皆可。 In addition, the specific structure of the substrate processing system is not limited to the types illustrated above. The substrate processing system may have any configuration as long as it includes a processing unit that performs substrate processing including "supply of processing liquid to the substrate" and a control device 100 that can control the processing unit.

[條件設定支援系統] [Condition setting support system]

基板處理系統1,進一步具備條件設定系統7。條件設定系統7,具備品質檢查裝置70。此外,條件設定系統7的至少一部分,由上述控制裝置100構成。亦即,條件設定系統7,具備品質檢查裝置70與控制裝置100。品質檢查裝置70,檢測關於塗布顯影裝置2所施行的基板處理之品質的資訊。 The substrate processing system 1 further includes a condition setting system 7 . The condition setting system 7 includes a quality inspection device 70 . In addition, at least part of the condition setting system 7 is composed of the above-mentioned control device 100 . That is, the condition setting system 7 includes the quality inspection device 70 and the control device 100 . The quality inspection device 70 detects information on the quality of the substrate processing performed by the coating and developing device 2 .

控制裝置100,構成為實行如下步驟:遵循預先設定的處理條件,使塗布顯影裝置2(基板處理裝置),實行包含往晶圓W之處理液的供給之基板處理;從品質檢查裝置70,取得關於遵循處理條件的基板處理之品質的實績資料;將包含基板處理的處理條件、及該基板處理的實績資料之資料集,輸入至機械學習裝置200;以及以因應處理條件之輸入而將關於基板處理之品質的預測資料輸出之方式,根據機械學習裝置200藉由根據複數組資料集的機械學習所產生之學習模型,導出基板處理的推薦處理條件。預測資料,例如為預測上述實績資料的資 料。實績資料,可為關於基板處理之品質的任何資料。基板處理後的基板之品質的資料,與基板處理之品質有關。此外,基板處理的中途之處理液的供給狀態,亦與基板處理的品質有關。 The control device 100 is configured to perform the following steps: following preset processing conditions, causing the coating and developing device 2 (substrate processing device) to perform substrate processing including supplying the processing liquid to the wafer W; and obtaining from the quality inspection device 70 Actual performance data on the quality of substrate processing according to the processing conditions; inputting a data set including the processing conditions of the substrate processing and actual performance data of the substrate processing to the machine learning device 200; and in response to the input of the processing conditions, information about the substrate The prediction data of the processing quality is output in a manner that the recommended processing conditions for substrate processing are derived based on the learning model generated by the machine learning device 200 through machine learning based on the complex data set. Forecast data, such as data that predicts the performance data mentioned above material. Performance data can be any data regarding the quality of substrate processing. The information on the quality of the substrate after substrate processing is related to the quality of the substrate processing. In addition, the supply state of the processing liquid during substrate processing is also related to the quality of the substrate processing.

條件設定系統7,可進一步具備機械學習裝置200。機械學習裝置200,構成為實行如下步驟:取得上述資料集;以及藉由根據複數組資料集的機械學習,而產生上述學習模型。機械學習裝置200,可收納於與控制裝置100相同之筐體,亦可設置在遠離控制裝置100之位置。設置在遠離控制裝置100之位置的情況,機械學習裝置200,例如經由區域網路而連接至控制裝置100。機械學習裝置200,亦可經由所謂網際網路等廣域網路而連接至控制裝置100。以下,詳細地說明各部的構成。 The condition setting system 7 may further include a machine learning device 200 . The machine learning device 200 is configured to perform the following steps: obtain the above-mentioned data set; and generate the above-mentioned learning model through machine learning based on a plurality of data sets. The machine learning device 200 can be stored in the same casing as the control device 100 , or can be installed at a location far away from the control device 100 . When installed at a location far away from the control device 100, the machine learning device 200 is connected to the control device 100 via, for example, a local area network. The machine learning device 200 can also be connected to the control device 100 via a wide area network such as the Internet. Below, the structure of each part is demonstrated in detail.

(品質資料檢測裝置) (Quality data detection device)

品質檢查裝置70,例如具備圖4所示之處理後檢查部80。處理後檢查部80,檢測關於基板處理後的基板之品質的資訊。作為一例,處理後檢查部80,檢測關於顯影處理後之晶圓W的表面所形成之光阻圖案的線寬之資訊。例如,處理後檢查部80,檢測可將光阻圖案的線寬之差別,識別為色調、明度及彩度的至少任一者之差別的影像資訊。 The quality inspection device 70 includes, for example, a post-process inspection unit 80 shown in FIG. 4 . The post-processing inspection unit 80 detects information on the quality of the substrate after the substrate processing. As an example, the post-process inspection unit 80 detects information about the line width of the photoresist pattern formed on the surface of the wafer W after the development process. For example, the post-processing inspection unit 80 detects image information that can identify the difference in line width of the photoresist pattern as a difference in at least any one of hue, brightness, and chroma.

具體而言,處理後檢查部80,包含:保持部83、線性驅動部84、拍攝部81、及投射反射部82。保持部83,水平地保持晶圓W。線性驅動部84,例如將電動馬達等作為動力源,使保持部83沿著水平的直線狀之路徑而移動。拍攝部81,取得晶圓W表面之影像資料。拍攝部81,在保持部83的移動方向中設置於處理後檢查部80內之一端側,朝向該移動方向之另一端側。 Specifically, the post-processing inspection unit 80 includes a holding unit 83 , a linear drive unit 84 , an imaging unit 81 , and a projection reflection unit 82 . The holding portion 83 holds the wafer W horizontally. The linear drive unit 84 uses, for example, an electric motor or the like as a power source to move the holding unit 83 along a horizontal linear path. The imaging unit 81 obtains image data of the surface of the wafer W. The imaging unit 81 is provided on one end side of the post-process inspection unit 80 in the moving direction of the holding unit 83 and faces the other end side in the moving direction.

投射反射部82,往拍攝範圍投射光線,將來自該拍攝範圍的反射光導向拍攝部81側。例如,投射反射部82,具備半反射鏡86及光源87。半反射鏡86,在較保持部83更高的位置中,設置於保持部83之移動範圍的中間部,將來自下方的光線往拍攝部81側反射。光源87,設置於半反射鏡86上方,通過半反射鏡86而往下方照射照明光。 The projection reflection part 82 projects light to the imaging range and guides the reflected light from the imaging range to the imaging part 81 side. For example, the projection reflection unit 82 includes a half mirror 86 and a light source 87 . The half mirror 86 is provided at a higher position than the holding portion 83 in the middle of the moving range of the holding portion 83, and reflects light from below toward the imaging portion 81 side. The light source 87 is provided above the half-reflecting mirror 86 and irradiates illumination light downward through the half-reflecting mirror 86 .

處理後檢查部80,如同下述地運作以取得晶圓W的表面之影像資料。首先,線性驅動部84,使保持部83移動。藉此,晶圓W通過半反射鏡86下方。在此一通過過程中,將來自晶圓W表面之各部的反射光,依序送往拍攝部81。拍攝部81,使來自晶圓W表面之各部的反射光成像,取得晶圓W表面之影像資料。藉此,檢測光阻圖案之影像資訊。 The post-process inspection unit 80 operates as follows to obtain image data of the surface of the wafer W. First, the linear drive part 84 moves the holding part 83. Thereby, the wafer W passes under the half mirror 86 . During this passing process, the reflected light from each part of the surface of the wafer W is sequentially sent to the imaging unit 81 . The imaging unit 81 images the reflected light from each part of the surface of the wafer W to obtain image data of the surface of the wafer W. Through this, the image information of the photoresist pattern is detected.

處理後檢查部80,亦可檢測關於成膜處理後之晶圓W的表面所形成之被覆膜的膜厚之資訊。例如,處理後檢查部80,檢測可將被覆膜的膜厚之差別,識別為色調、明度及彩度的至少任一者之差別的影像資訊。該影像資訊,亦可藉由圖4所例示之構成予以檢測。 The post-process inspection unit 80 can also detect information on the film thickness of the coating film formed on the surface of the wafer W after the film formation process. For example, the post-processing inspection unit 80 detects image information that can identify a difference in film thickness of the coating film as a difference in at least any one of hue, brightness, and chroma. This image information can also be detected through the structure illustrated in Figure 4.

品質檢查裝置70,亦可進一步具備圖5所示之處理中檢查部90。處理中檢查部90,檢測關於基板處理中之處理液的供給狀態之資訊。作為一例,處理中檢查部90,檢測關於顯影處理中之顯影液的供給狀態之資訊。例如,處理中檢查部90,包含:液體飛濺檢測部91、液體形成狀態檢測部92、及液體滴落檢測部93。 The quality inspection device 70 may further include an in-process inspection unit 90 shown in FIG. 5 . The in-process inspection unit 90 detects information on the supply status of the processing liquid during substrate processing. As an example, the in-process inspection unit 90 detects information on the supply status of the developer during the development process. For example, the in-process inspection unit 90 includes a liquid splash detection unit 91 , a liquid formation state detection unit 92 , and a liquid drop detection unit 93 .

液體飛濺檢測部91,檢測關於顯影液的供給中之液體飛濺的發生狀態之資訊。例如,液體飛濺檢測部91,包含照射部94與拍攝部95。照射部94,例如固定於噴嘴31等,於晶圓W的上方中往水平方向照射雷射光。照射部94之設置高度,設定為從表面Wa濺起的液滴可到達之高度。拍攝部95,取得來自照射部94之雷射光的照射範圍之影像資料。若產生液體飛濺,則因飛濺出的液滴而產生雷射光之散射等,拍攝部95所取得之影像資料產生變化。因此,拍攝部95所取得之影像資料,包含關於液滴的發生狀態之資訊。 The liquid splash detection unit 91 detects information on the occurrence state of liquid splash during the supply of developer. For example, the liquid splash detection unit 91 includes an irradiation unit 94 and an imaging unit 95 . The irradiation part 94 is fixed to, for example, the nozzle 31 or the like, and irradiates the laser light above the wafer W in the horizontal direction. The installation height of the irradiation part 94 is set to a height that liquid droplets splashed from the surface Wa can reach. The imaging unit 95 acquires image data of the irradiation range of the laser light from the irradiation unit 94 . If liquid splash occurs, the scattered droplets of the liquid cause scattering of laser light, etc., and the image data acquired by the imaging unit 95 changes. Therefore, the image data acquired by the imaging unit 95 includes information on the generation state of droplets.

液體形成狀態檢測部92,檢測關於表面Wa上之顯影液的液膜之形成狀態的資訊。例如液體形成狀態檢測部92,包含拍攝部96。拍攝部96,取得保持在保持部21之晶圓W的表面Wa之影像資料。拍攝部96所取得之影像資料,包含關於液膜的形成狀態之資訊。 The liquid formation state detection unit 92 detects information on the state of formation of a liquid film of the developer on the surface Wa. For example, the liquid formation state detection unit 92 includes an imaging unit 96 . The imaging unit 96 acquires image data of the surface Wa of the wafer W held in the holding unit 21 . The image data acquired by the imaging unit 96 includes information on the formation state of the liquid film.

液體滴落檢測部93,檢測關於來自噴嘴31之顯影液的液體滴落發生狀態之資訊。液體滴落,係指在預先設定之顯影液的供給期間外,顯影液從噴嘴31滴下之現象。例如,液體滴落檢測部93,包含拍攝部97。拍攝部97,取得噴嘴31及其下方之影像資料。拍攝部97所取得之影像資料,包含關於液體滴落的發生狀態之資訊。 The liquid dripping detection unit 93 detects information on the occurrence state of liquid dripping of the developer from the nozzle 31 . Liquid dripping refers to a phenomenon in which the developer drops from the nozzle 31 outside the preset supply period of the developer. For example, the liquid drop detection unit 93 includes an imaging unit 97 . The imaging unit 97 acquires image data of the nozzle 31 and its lower part. The image data acquired by the imaging unit 97 includes information on the occurrence state of liquid dripping.

處理中檢查部90,亦可檢測關於成膜處理中之成膜液的供給狀態之資訊。此一情況,藉由與上述液體飛濺檢測部91、液體形成狀態檢測部92、及液體滴落檢測部93等相同的構成,亦可檢測關於塗布單元U1之成膜液的供給狀態之資訊。 The in-process inspection unit 90 can also detect information on the supply status of the film-forming liquid during the film-forming process. In this case, information on the supply status of the film-forming liquid to the coating unit U1 can also be detected by using the same configuration as the liquid splash detection unit 91 , the liquid formation state detection unit 92 , and the liquid drop detection unit 93 .

(控制裝置及機械學習裝置) (Control device and machine learning device)

如圖6所示,控制裝置100,作為功能上的構成(下稱「功能模組」),具備:處理條件保存部111、處理控制部112、資料取得部113、資料輸入部114、及推薦條件導出部115。 As shown in FIG. 6 , the control device 100 includes a processing condition storage unit 111 , a processing control unit 112 , a data acquisition unit 113 , a data input unit 114 , and a recommendation unit as a functional configuration (hereinafter referred to as "functional module"). Condition derivation unit 115.

處理條件保存部111,記錄預先設定的處理條件。例如,處理條件保存部111,記錄處理模組14的顯影處理條件。顯影處理條件,包含熱處理單元U4的熱處理條件、及顯影單元U3的液體處理條件。顯影單元U3的液體處理條件,包含顯影液的供給、沖洗液的供給及乾燥(旋轉所進行的甩乾)等之程序。此外,上述顯影單元U3的液體處理條件,包含:各程序中之晶圓W的旋轉速度、顯影液的供給量、顯影液的供給時間、沖洗液的供給量、沖洗液的噴吐時間、及甩乾時間等。藉由噴嘴移送部32使噴嘴31移動並供給顯影液之情況,顯影單元U3的液體處理條件,亦可進一步包含:顯影液的供給中之噴嘴31的移動開始位置、移動速度、移動結束位置等。 The processing condition storage unit 111 records preset processing conditions. For example, the processing condition storage unit 111 records the development processing conditions of the processing module 14 . The development treatment conditions include the heat treatment conditions of the heat treatment unit U4 and the liquid treatment conditions of the development unit U3. The liquid processing conditions of the developing unit U3 include procedures such as supply of developer, supply of rinse liquid, and drying (drying by rotation). In addition, the liquid processing conditions of the above-mentioned developing unit U3 include: the rotation speed of the wafer W in each program, the supply amount of the developer, the supply time of the developer, the supply amount of the rinse liquid, the ejection time of the rinse liquid, and the rejection time. Dry time etc. When the nozzle transfer unit 32 moves the nozzle 31 and supplies the developer, the liquid processing conditions of the developing unit U3 may further include: the movement start position, movement speed, movement end position, etc. of the nozzle 31 during supply of the developer. .

處理條件保存部111,亦可記錄處理模組11、12、13的成膜處理條件。成膜處理條件,包含塗布單元U1的液體處理條件、熱處理單元U2的熱處理條件。塗布單元U1的液體處理條件,包含成膜液的供給等之程序。此外,塗布單元U1的液體處理條件,包含:各程序中之晶圓W的旋轉速度、成膜液的供給量、成膜液的供給時間等。 The processing condition storage unit 111 may also record the film formation processing conditions of the processing modules 11, 12, and 13. The film forming treatment conditions include liquid treatment conditions of the coating unit U1 and heat treatment conditions of the heat treatment unit U2. The liquid treatment conditions of the coating unit U1 include procedures such as supply of film-forming liquid. In addition, the liquid processing conditions of the coating unit U1 include the rotation speed of the wafer W in each program, the supply amount of the film-forming liquid, the supply time of the film-forming liquid, and the like.

處理控制部112,遵循處理條件保存部111所記錄的處理條件,使處理部實行基板處理。例如,處理控制部112,遵循處理條件保存部111所記錄的顯影處理條件,使處理模組14實行顯影處理。作為一例,處理控制部112,遵循預先設 定的熱處理條件,控制熱處理單元U4,俾對曝光處理後之晶圓W施行熱處理(例如上述PEB)。而後,處理控制部112,遵循預先設定的液體處理條件,控制顯影單元U3,俾對晶圓W施行顯影處理。而後,處理控制部112,遵循預先設定的熱處理條件,控制熱處理單元U4,俾對晶圓W施行熱處理(例如上述PB)。 The processing control unit 112 causes the processing unit to perform substrate processing in accordance with the processing conditions recorded in the processing condition storage unit 111 . For example, the process control unit 112 causes the processing module 14 to execute the development process in accordance with the development process conditions recorded in the process condition storage unit 111 . As an example, the processing control unit 112 follows the preset Under certain heat treatment conditions, the heat treatment unit U4 is controlled to perform heat treatment on the exposed wafer W (such as the above-mentioned PEB). Then, the processing control unit 112 controls the developing unit U3 to perform developing processing on the wafer W according to the preset liquid processing conditions. Then, the process control unit 112 follows the preset heat treatment conditions and controls the heat treatment unit U4 to perform heat treatment on the wafer W (for example, the above-mentioned PB).

處理控制部112,亦可遵循處理條件保存部111所記錄的成膜處理條件,使處理模組11、12、13實行成膜處理。作為一例,處理控制部112,遵循預先設定的液體處理條件,控制塗布單元U1,俾於晶圓W的表面Wa塗布成膜液。而後,處理控制部112,遵循預先設定的熱處理條件,控制熱處理單元U2,俾對晶圓W施行熱處理。 The process control unit 112 may also cause the process modules 11, 12, and 13 to perform film formation processing in accordance with the film formation process conditions recorded in the process condition storage unit 111. As an example, the process control unit 112 follows preset liquid processing conditions and controls the coating unit U1 to apply the film-forming liquid to the surface Wa of the wafer W. Then, the process control unit 112 controls the heat treatment unit U2 to perform heat treatment on the wafer W according to the preset heat treatment conditions.

資料取得部113,取得關於遵循處理條件的基板處理之品質的實績資料。資料取得部113,可取得包含複數項目之實績值的實績資料。複數項目之實績值,可包含表示基板處理後的晶圓W之品質的處理後項目、及表示基板處理中途的處理液之供給狀態的處理中項目之實績值。複數項目之實績值,亦可取得包含複數個相同種類之實績值的實績資料。複數個相同種類之實績值,係指理想上應成為相同值之複數個實績值。作為複數個相同種類之實績值的具體例,可列舉在複數處中取得之複數個實績值。 The data acquisition unit 113 acquires actual performance data on the quality of substrate processing according to the processing conditions. The data acquisition unit 113 can acquire performance data including performance values of a plurality of items. The actual performance values of the plurality of items may include a post-processing item indicating the quality of the wafer W after substrate processing, and an actual performance value of an in-process item indicating the supply status of the processing liquid during substrate processing. For performance values of multiple projects, performance data containing multiple performance values of the same type can also be obtained. A plurality of performance values of the same type means a plurality of performance values that should ideally be the same value. Specific examples of a plurality of performance values of the same type include a plurality of performance values obtained at a plurality of places.

例如,資料取得部113,作為處理後項目之一例,取得表示藉由顯影處理而在晶圓W的表面Wa形成之光阻圖案的線寬之實績值(下稱「線寬實績值」)的實績值。具體而言,資料取得部113,根據藉由處理後檢查部80檢測到的資訊,取得線寬實績值。資料取得部113,亦可根據藉由處理後檢查部80檢測到的資訊,取得表面Wa上的複數處之線寬實績值。 For example, the data acquisition unit 113 acquires, as an example of a post-processing item, an actual performance value (hereinafter referred to as "line width performance value") indicating the line width of the photoresist pattern formed on the surface Wa of the wafer W by the development process. Performance value. Specifically, the data acquisition unit 113 acquires the actual line width performance value based on the information detected by the post-processing inspection unit 80 . The data acquisition unit 113 may also acquire actual line width performance values at multiple locations on the surface Wa based on the information detected by the post-processing inspection unit 80 .

資料取得部113,作為處理中項目的一例,取得表示顯影處理中之顯影液的供給狀態之實績值。具體而言,資料取得部113,根據藉由處理中檢查部90檢測到的資訊,取得有無顯影液的液體飛濺、液膜的形成不良、及液體滴落之實績值。 The data acquisition unit 113 acquires an actual performance value indicating the supply status of the developer during the development process as an example of the item being processed. Specifically, based on the information detected by the in-process inspection unit 90 , the data acquisition unit 113 acquires the actual performance value of the presence or absence of liquid splashing of the developer, defective liquid film formation, and liquid dripping.

資料取得部113,作為處理後項目的一例,亦可取得表示藉由成膜處理而在晶圓W的表面Wa形成之被覆膜的膜厚之實績值(下稱「膜厚實績值」)的實績值。具體而言,資料取得部113,可根據藉由處理後檢查部80檢測到的資訊,取得膜厚實績值。資料取得部113,亦可根據藉由處理後檢查部80檢測到的資訊,取得表面Wa上的複數處之膜厚實績值。 The data acquisition unit 113 may also acquire, as an example of a post-processing item, an actual performance value indicating the film thickness of the coating film formed on the surface Wa of the wafer W by the film formation process (hereinafter referred to as the "film thickness performance value"). actual performance value. Specifically, the data acquisition unit 113 can acquire the actual film thickness performance value based on the information detected by the post-process inspection unit 80 . The data acquisition unit 113 may also acquire actual film thickness performance values at multiple locations on the surface Wa based on the information detected by the post-process inspection unit 80 .

資料取得部113,作為處理中項目的一例,亦可取得表示成膜處理中之成膜液的供給狀態之實績值。具體而言,資料取得部113,可根據藉由處理中檢查部90檢測到的資訊,取得有無成膜液的液體飛濺、液膜的形成不良、及液體滴落之實績值。 The data acquisition unit 113 may also acquire an actual performance value indicating the supply status of the film-forming liquid in the film-forming process as an example of an item being processed. Specifically, the data acquisition unit 113 can acquire the actual performance value of the presence or absence of liquid splashing of the film-forming liquid, formation failure of the liquid film, and liquid dripping based on the information detected by the in-process inspection unit 90 .

資料輸入部114,將資料集輸入至機械學習裝置200的模型產生部214(後述);資料集,包含處理條件、及與該處理條件對應的實績資料。資料輸入部114,可根據上述處理中項目之實績值,選擇輸入至模型產生部214之資料集。例如,資料輸入部114,可將處理液的供給狀態為不良之資料集,從往模型產生部214之輸入對象排除。作為處理液的供給狀態為不良之具體例,可列舉上述液體飛濺、液膜的形成不良、及液體滴落中至少一種的發生。 The data input unit 114 inputs a data set to the model generation unit 214 (described later) of the machine learning device 200; the data set includes processing conditions and performance data corresponding to the processing conditions. The data input unit 114 can select a data set to be input to the model generation unit 214 based on the actual performance values of the items being processed. For example, the data input unit 114 may exclude a data set in which the supply status of the processing liquid is defective from being input to the model generation unit 214 . Specific examples of a defective supply state of the processing liquid include the occurrence of at least one of the above-described liquid splashing, defective liquid film formation, and liquid dripping.

推薦條件導出部115,根據模型產生部214藉由根據複數組資料集的機械學習所產生之學習模型,而導出基板處理的推薦處理條件。如同後述,學習模型,係以因應處理條件之輸入而將關於基板處理之品質的預測資料輸出之方式產生。推薦處理條件,係根據學習模型、及預測資料的既定評價條件,而判斷為應推薦採用的處理條件。 The recommended condition deriving unit 115 derives recommended processing conditions for substrate processing based on the learning model generated by the model generating unit 214 through machine learning based on the complex data set. As will be described later, the learning model is generated by outputting prediction data on the quality of substrate processing in response to input of processing conditions. Recommended processing conditions are processing conditions that are judged to be recommended based on the learning model and the established evaluation conditions of the prediction data.

例如,推薦條件導出部115,作為更細分化之功能模組,包含評價條件輸入部121與搜尋結果取得部122。評價條件輸入部121,將預測資料的評價條件,輸入至機械學習裝置200之條件搜尋部216(後述)。評價條件,為判定預測資料是否為容許等級的條件。 For example, the recommendation condition derivation unit 115, as a more subdivided functional module, includes an evaluation condition input unit 121 and a search result acquisition unit 122. The evaluation condition input unit 121 inputs the evaluation conditions of the prediction data to the condition search unit 216 (described later) of the machine learning device 200 . The evaluation conditions are conditions for determining whether the prediction data is of an acceptable level.

評價條件輸入部121,亦可將評價複數項目之預測值的評價條件,輸入至條件搜尋部216。評價條件輸入部121,亦可將包含關於「複數項目的至少一部分之預測值的參差不一」之條件的評價條件,輸入至條件搜尋部216。例如,評價條件,包含預測資料的評價分數之導出手法、評價分數之容許等級。 The evaluation condition input unit 121 may also input evaluation conditions for evaluating the predicted values of multiple items into the condition search unit 216 . The evaluation condition input unit 121 may also input an evaluation condition including a condition regarding "variation in the predicted values of at least a part of a plurality of items" into the condition search unit 216 . For example, the evaluation conditions include the method for deriving the evaluation score of the prediction data and the allowable level of the evaluation score.

作為一例,評價條件輸入部121,將評價表面Wa上之複數處的上述線寬之預測值(下稱「線寬預測值」)的評價條件,輸入至條件搜尋部216。該評價條件,作為上述評價分數之導出手法的一例,包含複數處的至少一部分(例如全處)之線寬預測值的參差不一之算式(例如標準差之算式)。該評價條件,作為上述評價分數之容許等級,包含藉由上述算式算出的參差不一之容許上限值。 As an example, the evaluation condition input unit 121 inputs an evaluation condition for evaluating the predicted value of the line width at plural locations on the surface Wa (hereinafter referred to as "line width predicted value") to the condition search unit 216 . The evaluation condition, as an example of the derivation method of the above-mentioned evaluation score, includes a different calculation formula (for example, a standard deviation calculation formula) for the line width prediction value of at least a part (for example, all locations) of a plurality of locations. This evaluation condition, as the allowable level of the above-mentioned evaluation score, includes a varying allowable upper limit value calculated by the above-mentioned equation.

評價條件輸入部121,亦可將評價表面Wa上之複數處的上述膜厚之預測值的評價條件,輸入至條件搜尋部216。該評價條件,作為上述評價分數之導出手法 的一例,包含複數處的至少一部分(例如全處)之膜厚預測值的參差不一之算式(例如標準差之算式)。該評價條件,作為上述評價分數之容許等級,包含藉由上述算式算出的參差不一之容許上限值。 The evaluation condition input unit 121 may input evaluation conditions for evaluating the predicted values of the film thickness at plural locations on the surface Wa to the condition search unit 216. This evaluation condition is used as the derivation method of the above evaluation score. An example of includes a different calculation formula (such as a standard deviation calculation formula) for the predicted value of film thickness at at least a part (for example, the whole place) of a plurality of locations. This evaluation condition, as the allowable level of the above-mentioned evaluation score, includes a varying allowable upper limit value calculated by the above-mentioned equation.

搜尋結果取得部122,取得條件搜尋部216所導出的推薦處理條件,保存至處理條件保存部111。如同後述,推薦處理條件,係根據複數組資料集、學習模型、及評價條件輸入部121所輸入的評價條件而導出。 The search result acquisition unit 122 acquires the recommended processing conditions derived by the condition search unit 216 and saves them in the processing condition storage unit 111 . As will be described later, the recommended processing conditions are derived based on the plurality of data sets, the learning model, and the evaluation conditions input by the evaluation condition input unit 121 .

此處,處理控制部112,可使處理部遵循推薦處理條件而進一步實行基板處理。資料取得部113,可進一步取得關於遵循推薦處理條件的基板處理之品質的追加實績資料。資料輸入部114,可將包含推薦處理條件與追加實績資料之追加資料集,進一步輸入至模型產生部214。推薦條件導出部115,可根據模型產生部214根據追加資料集所更新的學習模型,而更新推薦處理條件。學習模型的更新,係指根據加上追加資料集之複數組資料集而產生新的學習模型。推薦處理條件的更新,係指根據模型產生部214所更新的學習模型,導出新的推薦處理條件。 Here, the process control unit 112 can cause the processing unit to further perform substrate processing in compliance with the recommended processing conditions. The data acquisition unit 113 can further acquire additional performance data on the quality of substrate processing that follows recommended processing conditions. The data input unit 114 can further input the additional data set including the recommendation processing conditions and additional performance data to the model generation unit 214. The recommendation condition derivation unit 115 can update the recommendation processing conditions based on the learning model updated by the model generation unit 214 based on the additional data set. The update of the learning model refers to generating a new learning model based on the plurality of data sets added to the additional data set. The update of the recommendation processing conditions means deriving new recommendation processing conditions based on the learning model updated by the model generation unit 214 .

此一情況,控制裝置100,可進一步具備條件評價部116、重複管理部117。條件評價部116,評價可否採用推薦處理條件。重複管理部117,至少重複以下步驟,直至條件評價部116之評價結果成為可採用為止。 In this case, the control device 100 may further include a condition evaluation unit 116 and a duplication management unit 117. The condition evaluation unit 116 evaluates whether the recommended processing conditions can be adopted. The repetition management unit 117 repeats at least the following steps until the evaluation result of the condition evaluation unit 116 becomes applicable.

i)處理控制部112,使處理部遵循推薦處理條件而進一步實行基板處理。 i) The processing control unit 112 causes the processing unit to further perform substrate processing in compliance with recommended processing conditions.

ii)資料取得部113,進一步取得追加實績資料。 ii) The data acquisition unit 113 further acquires additional performance data.

iii)資料輸入部114,將追加資料集進一步輸入至模型產生部214。 iii) The data input unit 114 further inputs the additional data set to the model generation unit 214.

iv)推薦條件導出部115,根據模型產生部214根據追加資料集所更新的學習模型,而更新推薦處理條件。 iv) The recommendation condition derivation unit 115 updates the recommendation processing conditions based on the learning model updated by the model generation unit 214 based on the additional data set.

條件評價部116的推薦處理條件之評價方法並無特別限制。例如,條件評價部116,根據根據既定評價條件的上述追加實績資料之評價結果,而評價可否採用推薦處理條件。該評價條件,亦可與上述預測資料的評價條件相同。例如,評價條件,包含追加實績資料的評價分數之導出手法、評價分數之容許等級。 The evaluation method of the recommended processing conditions by the condition evaluation unit 116 is not particularly limited. For example, the condition evaluation unit 116 evaluates whether the recommended processing condition can be adopted based on the evaluation result of the above-mentioned additional performance data based on the predetermined evaluation conditions. This evaluation condition may be the same as the evaluation condition of the above-mentioned prediction data. For example, the evaluation conditions include a method of deriving evaluation scores for additional performance data and an allowable level of evaluation scores.

作為一例,條件評價部116,根據既定評價條件,評價表面Wa上之複數處的上述線寬實績值。該評價條件,作為上述評價分數之導出手法的一例,包含複數處的至少一部分(例如全處)之線寬實績值的參差不一之算式(例如標準差之算式)。該評價條件,作為上述評價分數之容許等級,包含藉由上述算式算出的參差不一之容許上限值。 As an example, the condition evaluation unit 116 evaluates the actual line width performance values at a plurality of locations on the surface Wa based on predetermined evaluation conditions. The evaluation conditions, as an example of the derivation method of the above-mentioned evaluation score, include a calculation formula (for example, a standard deviation calculation formula) of different line width performance values at at least a part of a plurality of locations (for example, all locations). This evaluation condition, as the allowable level of the above-mentioned evaluation score, includes a varying allowable upper limit value calculated by the above-mentioned equation.

評價條件輸入部121,亦可根據既定評價條件,評價表面Wa上之複數處的上述膜厚實績值。該評價條件,作為上述評價分數之導出手法的一例,包含複數處的至少一部分(例如全處)之膜厚實績值的參差不一之算式(例如標準差之算式)。該評價條件,作為上述評價分數之容許等級,包含藉由上述算式算出的參差不一之容許上限值。 The evaluation condition input unit 121 may also evaluate the film thickness performance values at a plurality of locations on the surface Wa based on predetermined evaluation conditions. The evaluation conditions include, as an example of the derivation method of the above-mentioned evaluation score, a formula (for example, a formula for a standard deviation) of varying film thickness performance values at at least a part of a plurality of locations (for example, all locations). This evaluation condition, as the allowable level of the above-mentioned evaluation score, includes a varying allowable upper limit value calculated by the above-mentioned equation.

條件評價部116,可根據最新推薦處理條件與過去推薦處理條件(例如前次推薦處理條件)的差是否為容許等級,而評價可否採用最新推薦處理條件。假設藉由重複管理部117所進行之重複處理,而使推薦處理條件慢慢收斂為一條件。藉 由將最新推薦處理條件與過去推薦處理條件的差縮小至容許等級,而可採用接近收斂結果的推薦處理條件。 The condition evaluation unit 116 may evaluate whether the latest recommendation processing condition can be adopted based on whether the difference between the latest recommendation processing condition and the past recommendation processing condition (for example, the previous recommendation processing condition) is an acceptable level. It is assumed that the recommended processing conditions gradually converge to one condition by the repetitive processing performed by the repetitive management unit 117 . borrow By narrowing the difference between the latest recommended processing conditions and the past recommended processing conditions to an allowable level, recommended processing conditions that are close to the convergence result can be adopted.

條件評價部116,亦可根據最新追加實績資料與過去追加實績資料的差是否為容許等級,而評價可否採用最新推薦處理條件。條件評價部116,亦可根據最新追加實績資料之評價分數與過去追加實績資料之評價分數的差是否為容許等級,而評價可否採用最新推薦處理條件。 The condition evaluation unit 116 may also evaluate whether the latest recommendation processing condition can be adopted based on whether the difference between the latest additional performance data and the past additional performance data is an allowable level. The condition evaluation unit 116 may also evaluate whether the latest recommendation processing conditions can be adopted based on whether the difference between the evaluation score of the latest additional performance data and the evaluation score of the past additional performance data is an allowable level.

控制裝置100,可進一步具備實績資料修正部118。實績資料修正部118,在資料輸入部114將資料集輸入至模型產生部214前,從該資料集的實績資料,將源自於與塗布顯影裝置2的處理部之基板處理不同因素的成分排除。例如,實績資料修正部118,從上述複數處之線寬實績值,將源自於曝光處理的參差不一成分排除。具體而言,實績資料修正部118,將預先調查到之曝光處理特有的參差不一圖案,從複數處之線寬實績值排除。 The control device 100 may further include a performance data correction unit 118 . The performance data correction unit 118 , before the data input unit 114 inputs the data set to the model generation unit 214 , eliminates components from the performance data of the data set that are derived from factors different from the substrate processing of the processing unit of the coating and developing device 2 . For example, the performance data correction unit 118 eliminates uneven components derived from the exposure process from the line width performance values at the plurality of locations. Specifically, the performance data correction unit 118 excludes the uneven pattern unique to the exposure process that has been investigated in advance from the line width performance values at multiple locations.

機械學習裝置200,作為功能模組,具備:搜尋運算部211、資料取得部212、資料保存部213、模型產生部214、模型保存部215、及條件搜尋部216。搜尋運算部211,為機械學習裝置200之機械學習的引擎。例如,搜尋運算部211,藉由根據預先設定的學習條件之遺傳演算法,進行解的搜尋。該學習條件,包含第一代之個體、個體的評價分數之導出手法、評價分數之容許等級。 The machine learning device 200 includes, as functional modules, a search operation unit 211, a data acquisition unit 212, a data storage unit 213, a model generation unit 214, a model storage unit 215, and a condition search unit 216. The search calculation unit 211 is a machine learning engine of the machine learning device 200 . For example, the search operation unit 211 searches for a solution using a genetic algorithm based on preset learning conditions. The learning conditions include the first-generation individuals, the derivation method of the individual's evaluation score, and the allowable level of the evaluation score.

搜尋運算部211,取得第一代之複數個體,算出各個體的評價分數。而後,搜尋運算部211,將評價分數遠離容許等級之個體淘汰,並藉由交叉、倒置(inversion)、及突變(mutation)等運算,使複數個體進化為下一代之複數個體。其 後,搜尋運算部211,藉由重複個體之評價分數的導出、個體的淘汰、及個體的進化,而導出評價分數為容許等級之個體。 The search calculation unit 211 obtains a plurality of individuals of the first generation and calculates the evaluation score of each individual. Then, the search operation unit 211 eliminates individuals whose evaluation scores are far from the allowable level, and uses operations such as crossover, inversion, and mutation to evolve the plural individuals into the plural individuals of the next generation. That Then, the search calculation unit 211 derives individuals whose evaluation scores are at the allowable level by repeating the derivation of the individual's evaluation score, the elimination of individuals, and the evolution of individuals.

資料取得部212,從資料輸入部114取得上述資料集及追加資料集。資料保存部213,將資料取得部212所取得之資料集,儲存作為學習用之資料庫。 The data acquisition unit 212 acquires the above-mentioned data set and the additional data set from the data input unit 114. The data storage unit 213 stores the data set acquired by the data acquisition unit 212 as a database for learning.

模型產生部214,藉由根據資料保存部213所儲存之複數組資料集的機械學習,而產生上述學習模型。模型產生部214,亦可藉由包含以遺傳程式搜尋上述學習模型之運算過程的機械學習,而產生學習模型。例如,模型產生部214,產生包含因應處理條件之輸入而將複數項目之預測值分別輸出的複數模型式之學習模型。在各模型式之產生中,模型產生部214,設定模型式導出用的上述學習條件,對搜尋運算部211要求遵循該學習條件之模型式的導出。 The model generation unit 214 generates the above-mentioned learning model through machine learning based on the plurality of data sets stored in the data storage unit 213 . The model generation unit 214 may also generate a learning model through machine learning including an operation process of searching for the above-mentioned learning model using a genetic program. For example, the model generation unit 214 generates a learning model including a complex model expression that outputs predicted values of a plurality of items respectively in response to input of processing conditions. In generating each model expression, the model generation unit 214 sets the above-mentioned learning conditions for deriving the model expression, and requests the search calculation unit 211 to derive the model expression that follows the learning conditions.

例如,模型產生部214,產生因應處理條件之輸入而產生預測值的複數個暫時模型式,使其等為上述第一代之複數個體。暫時模型式,將各種運算子與隨機數值作為要素,以樹狀構造表示運算式。模型產生部214,使表示根據暫時模型式之預測值與實績值的離均差之離均差分數為上述學習條件之評價分數,定義其導出手法。例如模型產生部214,定義至少包含以下順序之導出手法。 For example, the model generation unit 214 generates a plurality of temporary model expressions that generate predicted values in response to the input of processing conditions, so that they are the plurality of individuals of the first generation. The temporary model expression uses various operators and random numerical values as elements, and expresses the calculation expression in a tree structure. The model generation unit 214 uses the mean difference score, which represents the mean difference between the predicted value and the actual performance value based on the temporary model expression, as the evaluation score of the above-mentioned learning conditions, and defines its derivation method. For example, the model generation unit 214 defines a derivation method including at least the following sequence.

a1)將複數組資料集的處理條件輸入至暫時模型式,導出複數預測值。 a1) Input the processing conditions of the complex group data set into the temporary model formula and derive the complex predicted value.

a2)導出表示複數預測值與複數組資料集之實績值的離均差之離均差分數。 a2) Derive the mean difference score that represents the mean difference between the complex predicted value and the actual performance value of the complex group data set.

離均差分數,若可表示複數預測值與複數組資料集之實績值的離均差,則為何種值皆可。作為離均差分數的具體例,可列舉預測值與實績值的差之平方 和、或該平方和之平方根等。模型產生部214,使對離均差分數預先設定之上限值,為上述學習條件中的評價分數之容許等級。 The mean difference score can be any value if it can represent the mean difference between the complex predicted value and the actual performance value of the complex data set. A specific example of the deviation score from the mean is the square of the difference between the predicted value and the actual performance value. and, or the square root of the sum of squares, etc. The model generation unit 214 sets the upper limit value set in advance for the mean difference score to the allowable level of the evaluation score in the above-mentioned learning conditions.

搜尋運算部211,藉由重複暫時模型式之離均差分數的導出、暫時模型式的淘汰、及暫時模型式的進化,而導出離均差分數為上限值以下的模型式。模型產生部214,取得藉由搜尋運算部211導出的模型式,保存至模型保存部215。藉由以上順序,模型產生部214,藉由將各模型式保存於模型保存部215,而使模型保存部215產生包含複數模型式的學習模型。 The search operation unit 211 derives a model expression in which the mean difference score is equal to or less than the upper limit by repeating the derivation of the mean difference score of the temporary model expression, the elimination of the temporary model expression, and the evolution of the temporary model expression. The model generation unit 214 obtains the model expression derived by the search calculation unit 211 and saves it in the model storage unit 215 . Through the above procedure, the model generation unit 214 stores each model expression in the model storage unit 215, thereby causing the model storage unit 215 to generate a learning model including the plural model expressions.

條件搜尋部216,根據資料保存部213所記錄的複數組資料集、模型保存部215所記錄的學習模型、及評價條件輸入部121所輸入的評價條件,而導出推薦處理條件。條件搜尋部216,亦可藉由包含以遺傳演算法搜尋推薦處理條件之運算過程的搜尋處理,而導出推薦處理條件。例如,條件搜尋部216,設定推薦處理條件導出用的上述學習條件,對搜尋運算部211要求遵循該學習條件之推薦處理條件的導出。 The condition search unit 216 derives recommendation processing conditions based on the plurality of data sets recorded in the data storage unit 213 , the learning model recorded in the model storage unit 215 , and the evaluation conditions input by the evaluation condition input unit 121 . The condition search unit 216 may also derive the recommended processing conditions through a search process including an operation process of searching for recommended processing conditions using a genetic algorithm. For example, the condition search unit 216 sets the above-mentioned learning conditions for deriving the recommended processing conditions, and requests the search calculation unit 211 to derive the recommended processing conditions that comply with the learning conditions.

例如,條件搜尋部216,使資料保存部213所記錄的複數組資料集之處理條件為第一代之複數個體。各處理條件,以樹狀構造表示複數項目之條件。 For example, the condition search unit 216 sets the processing condition of the plurality of data sets recorded by the data storage unit 213 to be the plurality of individuals of the first generation. Each processing condition represents conditions for multiple items in a tree structure.

條件搜尋部216,定義上述學習條的評價分數之導出手法,使其至少包含以下順序。 The condition search unit 216 defines the method for deriving the evaluation scores of the learning items so as to include at least the following order.

b1)將複數組資料集的處理條件,輸入至模型保存部215所記錄的學習模型,導出預測資料。 b1) Input the processing conditions of the complex data set into the learning model recorded in the model storage unit 215, and derive the prediction data.

b2)遵循評價條件輸入部121所輸入的評價條件之導出手法,導出預測資料的評價分數。 b2) Derive the evaluation score of the prediction data according to the derivation method of the evaluation conditions input by the evaluation condition input unit 121 .

條件搜尋部216,使評價條件輸入部121所輸入的評價條件之容許等級,為上述學習條件之評價分數之容許等級。 The condition search unit 216 makes the allowable level of the evaluation condition input by the evaluation condition input unit 121 be the allowable level of the evaluation score of the above-mentioned learning condition.

搜尋運算部211,藉由重複處理條件之評價分數的導出、處理條件的淘汰、及處理條件的進化,而導出評價分數為容許等級之推薦處理條件。條件搜尋部216,取得藉由搜尋運算部211導出的推薦處理條件,輸出至搜尋結果取得部122。 The search operation unit 211 derives recommended processing conditions with evaluation scores as allowable levels by repeatedly deriving evaluation scores of processing conditions, eliminating processing conditions, and evolving processing conditions. The condition search unit 216 acquires the recommended processing conditions derived by the search operation unit 211 and outputs them to the search result acquisition unit 122 .

圖7,例示控制裝置100及機械學習裝置200的硬體構成之方塊圖。控制裝置100,包含電路190。電路190,包含至少一個處理器191、記憶體192、儲存器193、顯示裝置194、輸入裝置195、輸出入埠196、及通訊埠197。儲存器193,為可由電腦讀取之非揮發性記錄媒體(例如快閃記憶體)。例如,儲存器193,記錄用於使控制裝置100實行如下步驟之程式:遵循預先設定的處理條件,使塗布顯影裝置2實行基板處理;從品質檢查裝置70,取得關於遵循處理條件的基板處理之品質的實績資料;將包含基板處理的處理條件、及該基板處理的實績資料之資料集,輸入至機械學習裝置200;根據機械學習裝置200根據複數組資料集所產生的上述學習模型,導出基板處理的推薦處理條件。例如,儲存器193,包含:用於記錄構成上述功能模組的程式之記錄區、及分配給處理條件保存部111之記錄區。 FIG. 7 is a block diagram illustrating the hardware configuration of the control device 100 and the machine learning device 200. The control device 100 includes a circuit 190 . The circuit 190 includes at least one processor 191, memory 192, storage 193, display device 194, input device 195, input/output port 196, and communication port 197. The storage 193 is a non-volatile recording medium (such as flash memory) that can be read by a computer. For example, the memory 193 records a program for causing the control device 100 to perform the following steps: causing the coating and developing device 2 to perform substrate processing according to preset processing conditions; and obtaining data on the substrate processing according to the processing conditions from the quality inspection device 70 . Quality performance data; input the data set including the processing conditions of the substrate processing and the performance data of the substrate processing into the machine learning device 200; derive the substrate based on the above learning model generated by the machine learning device 200 based on the plurality of sets of data sets Recommended handling conditions for handling. For example, the memory 193 includes a recording area for recording programs constituting the above-mentioned functional modules and a recording area allocated to the processing condition storage unit 111 .

顯示裝置194,使用在推薦處理條件的顯示等。顯示裝置194及輸入裝置195,作為控制裝置100之使用者介面而作用。顯示裝置194,例如包含液晶顯示 器等,使用在對於使用者的資訊顯示。輸入裝置195,例如為鍵盤等,取得使用者的輸入資訊。顯示裝置194及輸入裝置195,亦可一體化成為所謂的觸控式面板。輸入裝置195,使用在處理條件及評價條件之輸入等。 The display device 194 is used for displaying recommended processing conditions and the like. The display device 194 and the input device 195 function as a user interface of the control device 100 . The display device 194 includes, for example, a liquid crystal display Device, etc., used to display information to users. The input device 195, such as a keyboard, obtains the user's input information. The display device 194 and the input device 195 may be integrated into a so-called touch panel. The input device 195 is used for inputting processing conditions and evaluation conditions, etc.

記憶體192,暫時記錄從儲存器193裝載之程式、及處理器191之運算結果等。處理器191,協同記憶體192而實行上述程式,藉以實行塗布顯影裝置2的控制。輸出入埠196,因應來自處理器191之指令,而在與顯示裝置194及輸入裝置195之間施行電訊號的輸出入。通訊埠197,因應來自處理器191之指令,而在與機械學習裝置200之間施行網路通訊。 The memory 192 temporarily records the program loaded from the storage 193, the operation results of the processor 191, etc. The processor 191 cooperates with the memory 192 to execute the above program, thereby controlling the coating and developing device 2 . The input/output port 196 performs input/output of electrical signals with the display device 194 and the input device 195 in response to instructions from the processor 191 . The communication port 197 implements network communication with the machine learning device 200 in response to instructions from the processor 191 .

機械學習裝置200,包含電路290。電路290,包含處理器291、記憶體292、儲存器293、及通訊埠294。儲存器293,為可由電腦讀取之非揮發性記錄媒體(例如快閃記憶體)。例如,儲存器293,記錄用於使機械學習裝置200實行如下步驟之程式:取得上述資料集;以及藉由根據複數組資料集的機械學習,而產生上述學習模型。例如,儲存器293,包含:用於記錄構成上述功能模組的程式之記錄區、及分配給資料保存部213及模型保存部215之記錄區。 The machine learning device 200 includes a circuit 290. The circuit 290 includes a processor 291, a memory 292, a storage 293, and a communication port 294. The storage 293 is a non-volatile recording medium (such as flash memory) that can be read by a computer. For example, the memory 293 records a program for causing the machine learning device 200 to execute the following steps: obtain the above-mentioned data set; and generate the above-mentioned learning model through machine learning based on a plurality of sets of data sets. For example, the memory 293 includes a recording area for recording programs constituting the above-mentioned functional modules, and a recording area allocated to the data storage unit 213 and the model storage unit 215 .

記憶體292,暫時記錄從儲存器293裝載之程式、及處理器291之運算結果等。處理器291,協同記憶體292而實行上述程式,藉以實行上述學習模型之產生。通訊埠294,因應來自處理器291之指令,而在與控制裝置100之間施行網路通訊。 The memory 292 temporarily records the program loaded from the storage 293, the operation results of the processor 291, etc. The processor 291 cooperates with the memory 292 to execute the above program, thereby generating the above learning model. The communication port 294 implements network communication with the control device 100 in response to instructions from the processor 291 .

[條件設定支援順序] [Condition setting support sequence]

接著,作為條件設定支援方法之一例,說明控制裝置100及機械學習裝置200所分別實行的條件設定支援順序。控制裝置100所實行的條件設定支援序,包含推薦處理條件之導出順序、及推薦處理條件之刷新順序。機械學習裝置200所實行的條件設定支援順序,包含學習模型之產生順序、及推薦處理條件之搜尋順序。以下,具體例示各順序。 Next, as an example of the condition setting support method, the condition setting support procedure executed by the control device 100 and the machine learning device 200 will be described. The condition setting support program executed by the control device 100 includes a deriving sequence of recommended processing conditions and a refreshing sequence of recommended processing conditions. The condition setting support sequence executed by the machine learning device 200 includes a learning model generation sequence and a search sequence for recommended processing conditions. Below, specific examples of each sequence are given.

(推薦處理條件之導出順序) (Recommended export order of processing conditions)

控制裝置100所進行的推薦處理條件之導出順序,包含如下步驟:遵循預先設定的處理條件,使塗布顯影裝置2實行基板處理,該基板處理包含往晶圓W之處理液的供給;取得關於遵循處理條件的基板處理之品質的實績資料;將包含基板處理的處理條件、及該基板處理的實績資料之資料集,輸入至機械學習裝置200;根據機械學習裝置200根據複數組資料集所產生的上述學習模型,導出推薦處理條件。推薦處理條件的導出,可包含:將預測資料的評價條件,輸入至機械學習裝置200;以及取得機械學習裝置200根據複數組資料集、學習模型、及評價條件所導出的推薦處理條件。 The derivation sequence of the recommended processing conditions performed by the control device 100 includes the following steps: following the preset processing conditions, causing the coating and developing device 2 to perform substrate processing, which substrate processing includes supply of processing liquid to the wafer W; obtaining information on compliance The actual performance data of the quality of the substrate processing according to the processing conditions; a data set including the processing conditions of the substrate processing and the actual performance data of the substrate processing is input to the machine learning device 200; the machine learning device 200 generates based on a plurality of sets of data sets The above learning model derives recommended processing conditions. The derivation of recommended processing conditions may include: inputting the evaluation conditions of the prediction data into the machine learning device 200; and obtaining the recommended processing conditions derived by the machine learning device 200 based on the plurality of data sets, learning models, and evaluation conditions.

如圖8所例示,控制裝置100,首先,實行步驟S01、S02、S03。在步驟S01,處理控制部112,使塗布顯影裝置2,開始遵循處理條件保存部111所記錄的處理條件之基板處理。在步驟S02,資料取得部113,取得上述處理中項目之實績值。資料取得部113,亦可取得複數處理中項目之實績值。例如,資料取得部113,根據藉由處理中檢查部90檢測到的資訊,而取得有無顯影液的液體飛濺、液膜的形成不良、及液體滴落之實績值。資料取得部113,亦可根據藉由處理中檢查部90檢測到的資訊,取得有無成膜液的液體飛濺、液膜的形成不良、及液體滴 落的之實績值。在步驟S03,處理控制部112,確認遵循處理條件之基板處理是否已完成。 As illustrated in FIG. 8 , the control device 100 first executes steps S01, S02, and S03. In step S01 , the process control unit 112 causes the coating and developing device 2 to start substrate processing in accordance with the processing conditions recorded in the processing condition storage unit 111 . In step S02, the data acquisition unit 113 acquires the actual performance value of the item being processed. The data acquisition unit 113 can also acquire actual performance values of a plurality of items being processed. For example, the data acquisition unit 113 acquires actual performance values of the presence or absence of liquid splashing of the developer, defective liquid film formation, and liquid dripping based on the information detected by the in-process inspection unit 90 . The data acquisition unit 113 may also acquire the presence or absence of liquid splashing of the film-forming liquid, formation failure of the liquid film, and liquid droplets based on the information detected by the in-process inspection unit 90 The actual performance value that fell. In step S03, the process control unit 112 confirms whether the substrate processing complying with the processing conditions has been completed.

步驟S03中,判定為基板處理尚未完成的情況,控制裝置100,使處理回到步驟S02。其後,持續處理中項目之實績值的取得直至基板處理完成為止。步驟S03中,判定為基板處理完成的情況,控制裝置100,實行步驟S04。在步驟S04,資料輸入部114,根據處理中項目之實績值,確認處理液的供給狀態是否發生不良。 In step S03, it is determined that the substrate processing has not been completed, and the control device 100 returns the process to step S02. Thereafter, the acquisition of actual performance values of the items being processed is continued until the substrate processing is completed. In step S03, it is determined that the substrate processing is completed, and the control device 100 executes step S04. In step S04, the data input unit 114 confirms whether a defect has occurred in the supply state of the processing liquid based on the actual performance value of the item being processed.

步驟S04中,判定為處理液的供給狀態未發生不良之情況,控制裝置100,實行步驟S05、S06、S07。在步驟S05,資料取得部113,取得上述處理後項目之實績值。資料取得部113,亦可取得複數處理後項目之實績值。例如,資料取得部113,根據藉由處理後檢查部80檢測到的資訊,取得表面Wa上的複數處之上述線寬實績值。資料取得部113,可根據藉由處理後檢查部80檢測到的資訊,取得表面Wa上的複數處之上述膜厚實績值。在步驟S06,實績資料修正部118,從複數處理後項目之實績值,將源自於與基板處理不同因素的成分排除。在步驟S07,資料輸入部114,將資料集輸入至機械學習裝置200,該資料集包含處理條件、及與該處理條件對應的實績資料(複數處理後項目的實績值)。 In step S04, it is determined that the supply state of the processing liquid is not defective, and the control device 100 executes steps S05, S06, and S07. In step S05, the data acquisition unit 113 acquires the actual performance value of the above-mentioned processed items. The data acquisition unit 113 can also acquire the actual performance values of multiple processed items. For example, the data acquisition unit 113 acquires the above-mentioned actual line width performance values at a plurality of locations on the surface Wa based on the information detected by the post-processing inspection unit 80 . The data acquisition unit 113 can acquire the above-mentioned actual film thickness performance values at a plurality of locations on the surface Wa based on the information detected by the post-process inspection unit 80 . In step S06, the performance data correction unit 118 excludes components originating from factors different from the substrate processing from the performance values of the plurality of post-process items. In step S07, the data input unit 114 inputs a data set including processing conditions and actual performance data (actual performance values of plural-processed items) corresponding to the processing conditions to the machine learning device 200.

接著,控制裝置100,實行步驟S08。步驟S04中,判定為處理液的供給狀態發生不良之情況,控制裝置100,實行步驟S08而未實行步驟S05、S06、S07。在步驟S08,資料輸入部114,確認機械學習裝置200中之機械學習所需的數量之資料集的輸入是否已完成。 Next, the control device 100 executes step S08. In step S04, it is determined that the supply state of the processing liquid is defective, and the control device 100 executes step S08 without executing steps S05, S06, and S07. In step S08, the data input unit 114 confirms whether the input of the number of data sets required for machine learning in the machine learning device 200 has been completed.

步驟S08中,判定為機械學習所需的數量之資料集的輸入尚未完成之情況,控制裝置100,實行步驟S09。在步驟S09,處理控制部112,變更處理條件。例如,處理控制部112,根據使用者往輸入裝置195的輸入等,變更處理條件。而後,控制裝置100,使處理回到步驟S01。其後,重複處理條件的變更、基板處理的實行、及資料集的輸入,直至機械學習所需的數量之資料集的輸入完成為止。 In step S08, it is determined that the input of the number of data sets required for machine learning has not been completed, and the control device 100 executes step S09. In step S09, the processing control unit 112 changes the processing conditions. For example, the processing control unit 112 changes the processing conditions based on the user's input to the input device 195 or the like. Then, the control device 100 returns the process to step S01. Thereafter, changing the processing conditions, executing the substrate processing, and inputting the data set are repeated until the input of the number of data sets required for machine learning is completed.

步驟S08中,判定為機械學習所需的數量之資料集的輸入完成之情況,控制裝置100,實行步驟S11、S12、S13、S14。在步驟S11,評價條件輸入部121,等待來自機械學習裝置200之學習完成通知。在步驟S12,評價條件輸入部121,設定預測資料的評價條件。例如評價條件輸入部121,根據使用者往輸入裝置195的輸入等,設定上述預測資料的評價條件。在步驟S13,評價條件輸入部121,將在步驟S12設定的評價條件,輸入至機械學習裝置200。在步驟S14,搜尋結果取得部122,取得機械學習裝置200根據複數組資料集、學習模型、及評價條件輸入部121輸入之評價條件所導出的推薦處理條件,保存至處理模組11。藉由上述步驟,完成推薦處理條件之導出順序。 In step S08, it is determined that the input of the number of data sets required for machine learning has been completed, and the control device 100 executes steps S11, S12, S13, and S14. In step S11, the evaluation condition input unit 121 waits for a learning completion notification from the machine learning device 200. In step S12, the evaluation condition input unit 121 sets evaluation conditions for the prediction data. For example, the evaluation condition input unit 121 sets the evaluation conditions for the prediction data based on the user's input to the input device 195 or the like. In step S13, the evaluation condition input unit 121 inputs the evaluation condition set in step S12 to the machine learning device 200. In step S14 , the search result acquisition unit 122 acquires the recommended processing conditions derived by the machine learning device 200 based on the plurality of data sets, learning models, and evaluation conditions input by the evaluation condition input unit 121 , and saves them to the processing module 11 . Through the above steps, the export sequence of recommended processing conditions is completed.

(推薦處理條件之刷新順序) (Recommended refresh order for processing conditions)

控制裝置100所進行的推薦處理條件之刷新順序,包含如下步驟:使塗布顯影裝置2遵循推薦處理條件而進一步實行基板處理;進一步取得關於遵循推薦處理條件的基板處理之品質的追加實績資料;將包含推薦處理條件與追加實績資料之追加資料集,進一步輸入至機械學習裝置200;以及根據機械學習裝置200根據追加資料集所更新的學習模型,更新推薦處理條件。此刷新順序,可進一步包含評價推薦處理條件之步驟;此刷新順序,可在推薦處理條件之評價結果 達到既定等級為止前,重複下列步驟:使塗布顯影裝置2遵循推薦處理條件而進一步實行基板處理;進一步取得追加實績資料;將追加資料集進一步輸入至機械學習裝置200;以及根據機械學習裝置200根據追加資料集所更新的學習模型,更新推薦處理條件。 The refresh sequence of the recommended processing conditions performed by the control device 100 includes the following steps: causing the coating and developing device 2 to further perform substrate processing according to the recommended processing conditions; further obtaining additional performance data on the quality of substrate processing following the recommended processing conditions; The additional data set including the recommended processing conditions and the additional performance data is further input to the machine learning device 200; and the recommended processing conditions are updated based on the learning model updated by the machine learning device 200 based on the additional data set. This refresh sequence may further include the steps of evaluating the recommended processing conditions; this refresh sequence may further include the evaluation results of the recommended processing conditions. Until the predetermined level is reached, the following steps are repeated: making the coating and developing device 2 further perform substrate processing according to the recommended processing conditions; further acquiring additional performance data; further inputting the additional data set to the machine learning device 200; and based on the machine learning device 200. Add the updated learning model to the data set and update the recommended processing conditions.

如圖9所例示,控制裝置100,首先,實行步驟S21、S22、S23、S24、S25。在步驟S21,處理控制部112,使塗布顯影裝置2,實行遵循處理條件保存部111所記錄的推薦處理條件之基板處理。在步驟S22,資料取得部113,取得上述處理後項目之追加實績值。資料取得部113,亦可取得複數處理後項目之追加實績值。在步驟S23,實績資料修正部118,從複數處理後項目之追加實績值,將源自於與基板處理不同因素的成分排除。在步驟S24,條件評價部116,評價推薦處理條件。在步驟S25,重複管理部117,根據步驟S24之評價結果,確認可否採用推薦處理條件。 As illustrated in FIG. 9 , the control device 100 first executes steps S21, S22, S23, S24, and S25. In step S21 , the process control unit 112 causes the coating and developing device 2 to perform substrate processing in compliance with the recommended processing conditions recorded in the processing condition storage unit 111 . In step S22, the data acquisition unit 113 acquires the additional performance value of the above-mentioned processed item. The data acquisition unit 113 can also acquire the additional performance values of the plurality of processed items. In step S23, the performance data correction unit 118 excludes components originating from factors different from the substrate processing from the additional performance values of the plurality of post-process items. In step S24, the condition evaluation unit 116 evaluates the recommendation processing conditions. In step S25, the repetition management unit 117 confirms whether the recommended processing condition can be adopted based on the evaluation result in step S24.

步驟S25中,判定為不可採用推薦處理條件之情況,控制裝置100,實行步驟S26、S27、S28。在步驟S26,資料輸入部114,將追加資料集輸入至機械學習裝置200,該追加資料集包含處理條件、及與該處理條件對應的追加實績資料(複數處理後項目的追加實績值)。在步驟S27,搜尋結果取得部122,等待來自機械學習裝置200之學習模型的更新完成通知。在步驟S28,搜尋結果取得部122,取得機械學習裝置200根據追加資料集所更新的推薦處理條件,保存至處理模組11。而後,控制裝置100,使處理回到步驟S21。其後,重複追加實績資料的取得、及推薦處理條件的更新,直至推薦處理條件成為可採用為止。 In step S25, if it is determined that the recommended processing conditions cannot be adopted, the control device 100 executes steps S26, S27, and S28. In step S26, the data input unit 114 inputs an additional data set including processing conditions and additional performance data (additional performance values of plural processed items) corresponding to the processing conditions to the machine learning device 200. In step S27 , the search result acquisition unit 122 waits for an update completion notification of the learning model from the machine learning device 200 . In step S28 , the search result acquisition unit 122 acquires the recommended processing conditions updated by the machine learning device 200 based on the additional data set and saves them to the processing module 11 . Then, the control device 100 returns the process to step S21. Thereafter, the acquisition of additional performance data and the updating of the recommended processing conditions are repeated until the recommended processing conditions become applicable.

步驟S25中,判定為可採用推薦處理條件之情況,控制裝置100完成處理。藉由上述步驟,完成推薦處理條件之刷新順序。 In step S25, it is determined that the recommended processing conditions can be adopted, and the control device 100 completes the processing. Through the above steps, the refresh sequence of recommended processing conditions is completed.

(學習模型之產生順序) (Production order of learning models)

機械學習裝置200所進行的學習模型之產生順序,包含如下步驟:取得上述資料集;以及藉由根據複數組資料集的機械學習,產生學習模型。藉由機械學習產生學習模型的步驟,可包含藉由遺傳程式搜尋學習模型之運算過程。可產生包含因應處理條件之輸入而將複數項目之預測值分別輸出的複數模型式之學習模型。 The sequence of generating a learning model performed by the machine learning device 200 includes the following steps: obtaining the above-mentioned data set; and generating a learning model through machine learning based on a plurality of sets of data sets. The step of generating a learning model through machine learning may include a computational process of searching for a learning model through genetic programming. It is possible to generate a learning model including a complex model formula that outputs predicted values of complex items respectively in response to the input of processing conditions.

如圖10所例示,機械學習裝置200,首先,實行步驟S31、S32、S33。在步驟S31,資料取得部212,等待來自資料輸入部114之資料集的輸入。在步驟S32,資料取得部212,將輸入之資料集儲存至資料保存部213。在步驟S33,資料保存部213,確認儲存至資料保存部213之資料集的數量是否已達到機械學習所需的數量。 As illustrated in FIG. 10 , the machine learning device 200 first executes steps S31, S32, and S33. In step S31, the data acquisition unit 212 waits for the input of the data set from the data input unit 114. In step S32, the data acquisition unit 212 stores the input data set into the data storage unit 213. In step S33, the data storage unit 213 confirms whether the number of data sets stored in the data storage unit 213 has reached the number required for machine learning.

步驟S33中,判定為儲存之資料集的數量尚未達到機械學習所需的數量之情況,控制裝置100,使處理回到步驟S31。其後,重複資料集的取得,直至儲存機械學習所需的數量之資料集為止。 In step S33, it is determined that the number of stored data sets has not reached the number required for machine learning, and the control device 100 returns the process to step S31. Thereafter, the acquisition of the data set is repeated until the number of data sets required for machine learning is stored.

步驟S33中,判定為儲存之資料集的數量達到機械學習所需的數量之情況,控制裝置100,實行步驟S34、S35、S36。在步驟S34,模型產生部214,設定與任一預測值對應之模型式導出用的上述學習條件,對搜尋運算部211要求遵循該學習條件之模型式的導出。例如,模型產生部214,產生因應處理條件之輸入而 產生預測值的複數個暫時模型式,使其等為上述第一代之複數個體。此外,模型產生部214,將上述離均差分數作為評價分數,定義其導出手法,使上述離均差分數之上限值為評價分數之容許等級。在步驟S35,搜尋運算部211,遵循上述學習條件,算出各暫時模型式的離均差分數。在步驟S36,搜尋運算部211,遵循上述學習條件,確認離均差分數為上述上限值以下之暫時模型式是否存在。 In step S33, it is determined that the number of stored data sets reaches the number required for machine learning, and the control device 100 executes steps S34, S35, and S36. In step S34, the model generation unit 214 sets the above-described learning conditions for deriving a model expression corresponding to any predicted value, and requests the search operation unit 211 to derive a model expression that conforms to the learning conditions. For example, the model generation unit 214 generates a model based on input of processing conditions. Generate a plurality of temporary model expressions of predicted values, so that they are equal to the plurality of individuals of the first generation. In addition, the model generation unit 214 uses the above-mentioned mean difference score as an evaluation score, and defines its derivation method so that the upper limit of the above-mentioned mean difference score becomes the allowable level of the evaluation score. In step S35, the search calculation unit 211 calculates the mean difference score of each temporary model expression according to the above learning conditions. In step S36, the search calculation unit 211 follows the above-mentioned learning conditions and confirms whether there is a temporary model expression in which the deviation score from the mean is less than the above-mentioned upper limit value.

步驟S36中,判定為離均差分數為上限值以下之暫時模型式不存在的情況,機械學習裝置200,實行步驟S37。在步驟S37,搜尋運算部211,將離均差分數超過上限值之大的暫時模型式淘汰,並藉由交叉、倒置、及突變等之運算,使複數個暫時模型式進化為下一代之複數個暫時模型式。而後,機械學習裝置200,使處理回到步驟S35。其後,重複暫時模型式之離均差分數的導出、暫時模型式的淘汰、及暫時模型式的進化,直至導出離均差分數成為上限值以下之暫時模型式為止。 In step S36, when it is determined that there is no temporary model expression in which the deviation score from the mean is equal to or less than the upper limit value, the machine learning device 200 executes step S37. In step S37, the search operation unit 211 eliminates temporary model expressions whose deviation from the mean exceeds the upper limit, and evolves a plurality of temporary model expressions into the next generation through operations such as crossover, inversion, and mutation. A plurality of temporary model equations. Then, the machine learning device 200 returns the process to step S35. Thereafter, the derivation of the deviation score from the mean of the temporary model expression, the elimination of the temporary model expression, and the evolution of the temporary model expression are repeated until the derivation of the deviation score from the mean becomes a temporary model expression below the upper limit.

步驟S36中,判定為離均差分數為上限值以下之暫時模型式存在的情況,機械學習裝置200,實行步驟S38、S39。在步驟S38,搜尋運算部211,選擇離均差分數最佳(最小)之暫時模型式,將其作為學習模型之一個模型式而保存至模型保存部215。在步驟S39,模型產生部214,確認構成學習模型所用之全部模型式(亦即,導出複數項目的預測值所需之全部模型式)的導出是否已完成。 In step S36, it is determined that there is a temporary model expression in which the deviation score from the mean is equal to or less than the upper limit value, and the machine learning device 200 executes steps S38 and S39. In step S38, the search operation unit 211 selects the temporary model equation with the best (minimum) mean difference score, and saves it in the model storage unit 215 as a model equation of the learning model. In step S39, the model generation unit 214 confirms whether the derivation of all model expressions used to constitute the learning model (that is, all model expressions required to derive the predicted values of plural items) has been completed.

步驟S39中,判定為全部模型式的導出尚未完成的情況,機械學習裝置200,實行步驟S41。在步驟S41,模型產生部214,變更導出對象之模型式。換而言之,模型產生部214,變更模型式之預測對象的項目。而後,機械學習裝置200,使 處理回到步驟S34。其後,重複學習條件的設定、及根據該設定之模型式的導出,直至全部模型式的導出完成為止。 In step S39, it is determined that the derivation of all model expressions has not been completed, and the machine learning device 200 executes step S41. In step S41, the model generation unit 214 changes the model expression of the export object. In other words, the model generation unit 214 changes the items to be predicted in the model expression. Then, the machine learning device 200 makes The process returns to step S34. Thereafter, the setting of learning conditions and the derivation of model expressions based on the settings are repeated until the derivation of all model expressions is completed.

步驟S39中,判定為全部模型式的導出完成之情況,機械學習裝置200,完成學習模型之產生。藉由上述步驟,完成學習模型之產生順序。 In step S39, it is determined that the derivation of all model expressions is completed, and the machine learning device 200 completes generation of the learning model. Through the above steps, the sequence of generating the learning model is completed.

(推薦處理條件之搜尋順序) (Search order for recommended processing conditions)

機械學習裝置200所進行的推薦處理條件之搜尋順序,包含如下步驟:根據複數組資料集、學習模型、及預測資料的評價條件,導出基板處理的推薦處理條件。推薦處理條件的導出,可包含藉由遺傳演算法搜尋推薦處理條件之運算過程。亦可根據複數組資料集、複數模型式、及評價複數項目之預測值的評價條件,導出推薦處理條件。例如,可根據包含關於「複數項目之預測值的參差不一」之條件的評價條件,導出推薦處理條件。 The search sequence for recommended processing conditions performed by the machine learning device 200 includes the following steps: deriving recommended processing conditions for substrate processing based on evaluation conditions of a plurality of data sets, learning models, and prediction data. The derivation of recommended processing conditions may include an operation process of searching for recommended processing conditions through a genetic algorithm. Recommended processing conditions can also be derived based on complex number group data sets, complex number model expressions, and evaluation conditions for evaluating predicted values of complex number items. For example, the recommendation processing conditions can be derived based on the evaluation conditions including the condition "variation in the predicted values of multiple items".

如圖11所例示,機械學習裝置200,首先,實行步驟S51、S52。在步驟S51,條件搜尋部216,等待來自評價條件輸入部121之評價條件的輸入。在步驟S52,條件搜尋部216,設定推薦處理條件導出用的上述學習條件,對搜尋運算部211要求遵循該學習條件之推薦處理條件的導出。例如,條件搜尋部216,使資料保存部213所記錄的複數組資料集之處理條件,為第一代之複數個體。此外,條件搜尋部216,根據評價條件輸入部121所輸入的評價條件,定義評價分數之導出手法及評價分數之容許等級。 As illustrated in FIG. 11 , the machine learning device 200 first executes steps S51 and S52. In step S51, the condition search unit 216 waits for input of evaluation conditions from the evaluation condition input unit 121. In step S52, the condition search unit 216 sets the above-mentioned learning conditions for deriving the recommended processing conditions, and requests the search calculation unit 211 to derive the recommended processing conditions that comply with the learning conditions. For example, the condition search unit 216 makes the processing conditions of the plurality of data sets recorded by the data storage unit 213 be plural individuals of the first generation. In addition, the condition search unit 216 defines the evaluation score derivation method and the allowable level of the evaluation score based on the evaluation conditions input by the evaluation condition input unit 121 .

接著,機械學習裝置200,實行步驟S53、S54、S55。在步驟S53,搜尋運算部211,將各處理條件輸入至模型保存部215所記錄的學習模型,導出預測資料。 在步驟S54,搜尋運算部211,導出預測資料的評價分數。在步驟S55,搜尋運算部211,確認評價分數為容許等級的處理條件是否存在。 Next, the machine learning device 200 executes steps S53, S54, and S55. In step S53, the search operation unit 211 inputs each processing condition into the learning model recorded in the model storage unit 215, and derives prediction data. In step S54, the search calculation unit 211 derives the evaluation score of the prediction data. In step S55, the search calculation unit 211 confirms whether there is a processing condition in which the evaluation score is an allowable level.

步驟S55中,判定為評價分數為容許等級之處理條件不存在的情況,機械學習裝置200,實行步驟S56。在步驟S56,搜尋運算部211,將評價分數遠離容許等級之處理條件淘汰,並藉由交叉、倒置、及突變等之運算,使複數的處理條件進化為下一代之複數處理條件。而後,機械學習裝置200,使處理回到步驟S53。其後,重複處理條件之評價分數的導出、處理條件的淘汰、及處理條件的進化,直至導出評價分數成為容許等級之處理條件為止。 In step S55, when it is determined that the processing condition for the evaluation score to be the allowable level does not exist, the machine learning device 200 executes step S56. In step S56, the search operation unit 211 eliminates the processing conditions whose evaluation scores are far from the allowable level, and evolves the complex processing conditions into the next generation's complex processing conditions through operations such as crossover, inversion, and mutation. Then, the machine learning device 200 returns the process to step S53. Thereafter, the derivation of the evaluation score of the processing condition, the elimination of the processing condition, and the evolution of the processing condition are repeated until the derived evaluation score becomes the processing condition of the allowable level.

步驟S55中,判定為評價分數為容許等級之處理條件存在的情況,機械學習裝置200,實行步驟S57、S58。在步驟S57,搜尋運算部211,使評價分數為最佳值之處理條件為推薦處理條件。在步驟S58,條件搜尋部216,取得藉由搜尋運算部211導出之推薦處理條件,輸出至搜尋結果取得部122。藉由上述步驟,完成推薦處理條件之搜尋順序。 In step S55, when it is determined that the processing condition for the evaluation score to be an allowable level exists, the machine learning device 200 executes steps S57 and S58. In step S57, the search calculation unit 211 sets the processing condition in which the evaluation score is the optimal value as the recommended processing condition. In step S58 , the condition search unit 216 obtains the recommended processing conditions derived by the search operation unit 211 and outputs them to the search result acquisition unit 122 . Through the above steps, the search sequence of recommended processing conditions is completed.

推薦處理條件的導出,並未限定為藉由上述遺傳演算法搜尋推薦處理條件之運算過程。例如,步驟S55中,亦可藉由重複處理條件的變更與評價分數的導出之運算過程直至評價分數成為容許等級為止,而導出推薦處理條件。 The derivation of recommended processing conditions is not limited to the operation process of searching for recommended processing conditions through the above genetic algorithm. For example, in step S55, the recommended processing conditions may also be derived by repeating the operation process of changing the processing conditions and deriving the evaluation score until the evaluation score reaches the allowable level.

[具體例] [Specific example]

作為一例,具體例示顯影單元U3中之顯影處理的處理條件之設定支援順序。顯影單元U3中之顯影處理的處理條件,例如包含:晶圓W的旋轉速度、顯影液的供給量、顯影液的供給時間、沖洗液的供給量、沖洗液的噴吐時間、甩 乾時間、噴嘴31的移動開始位置、噴嘴31的移動速度、及噴嘴31移動結束位置等。其中,推薦處理條件所必需之項目,例如為顯影液的供給中之晶圓W的旋轉速度、及噴嘴31的移動速度。此一情況,於上述步驟S01~S09中,重複如下步驟:改變晶圓W的旋轉速度及噴嘴31的移動速度,並將資料集輸入至機械學習裝置200。 As an example, the setting support procedure of the processing conditions of the development process in the development unit U3 is specifically illustrated. The processing conditions of the development process in the development unit U3 include, for example: the rotation speed of the wafer W, the supply amount of the developer, the supply time of the developer, the supply amount of the rinse liquid, the ejection time of the rinse liquid, and the ejection time of the rinse liquid. The drying time, the movement start position of the nozzle 31, the movement speed of the nozzle 31, the movement end position of the nozzle 31, etc. Among them, items necessary for the recommended processing conditions include, for example, the rotation speed of the wafer W during supply of the developer solution and the moving speed of the nozzle 31 . In this case, in the above-mentioned steps S01 to S09, the following steps are repeated: changing the rotation speed of the wafer W and the moving speed of the nozzle 31, and inputting the data set to the machine learning device 200.

例如,步驟S01~S09,在使晶圓W的旋轉速度為200rpm之狀態下,使噴嘴31的移動速度為15mm/s、20mm/s、25mm/s;接著,在使晶圓W的旋轉速度為250rpm之狀態下,使噴嘴31的移動速度為15mm/s、20mm/s、25mm/s;接著,在使晶圓W的旋轉速度為300rpm之狀態下,使噴嘴31的移動速度為15mm/s、20mm/s、25mm/s。在以此等處理條件之任一者實行的步驟S04中,判定為處理液的供給狀態發生不良之情況,將與該處理條件對應之資料集,從往機械學習裝置200之輸入對象排除。此一情況,為了獲得機械學習所需的數量之資料集,而藉由步驟S09施行處理條件之進一步的變更。例如,在旋轉速度為300rpm且移動速度為25mm/s的處理條件下,判定為發生顯影液的液體飛濺之情況,將旋轉速度變更為290rpm,再度取得旋轉速度為290rpm且移動速度為25mm/s之條件下的實績資料。 For example, in steps S01 to S09, while the rotation speed of the wafer W is 200 rpm, the moving speed of the nozzle 31 is set to 15 mm/s, 20 mm/s, and 25 mm/s; then, the rotation speed of the wafer W is set to 200 rpm. In the state of 250 rpm, the moving speed of the nozzle 31 was set to 15 mm/s, 20 mm/s, and 25 mm/s; then, in the state of the rotation speed of the wafer W being 300 rpm, the moving speed of the nozzle 31 was set to 15 mm/s. s, 20mm/s, 25mm/s. In step S04 executed under any one of these processing conditions, it is determined that the supply state of the processing liquid is defective, and the data set corresponding to the processing condition is excluded from being input to the machine learning device 200 . In this case, in order to obtain the number of data sets required for machine learning, the processing conditions are further changed in step S09. For example, under the processing conditions of a rotation speed of 300 rpm and a movement speed of 25 mm/s, it is determined that splashing of the developer solution occurs, the rotation speed is changed to 290 rpm, and the rotation speed is again 290 rpm and the movement speed is 25 mm/s. performance data under the conditions.

步驟S05中,例如,將分割為n處之晶圓W的分割區域之各自的線寬之平均值,取得作為n個線寬實績值。此一情況之資料集如以下所例示。 In step S05, for example, the average value of the line widths of the divided regions of the wafer W divided into n places is obtained as n line width actual performance values. The data set for this situation is illustrated below.

處理條件:晶圓W的旋轉速度=200rpm、噴嘴的移動速度=15mm/s Processing conditions: rotation speed of wafer W = 200 rpm, moving speed of nozzle = 15 mm/s

實績資料:W1=23nm、W2=28nm、W3=31nm、...Wn=24nm(Wi:分割區域i之線寬平均值) Actual performance data: W1=23nm, W2=28nm, W3=31nm,. . . Wn=24nm (Wi: average line width of divided area i)

根據此資料集在機械學習裝置200中產生的學習模型,例如,因應晶圓W的旋轉速度及噴嘴的移動速度之輸入,而將n處之分割區域中的線寬平均值之預測值輸出。在步驟S12,作為上述評價分數之算式,例如設定n個線寬預測值的標準差之算式;作為上述容許等級,設定標準差之容許值。根據如此地設定的評價條件,於機械學習裝置200中,將晶圓W的旋轉速度及噴嘴31的移動速度之推薦值(例如,晶圓W的旋轉速度=234rpm、噴嘴31的移動速度=22rpm),作為上述推薦處理條件導出。 The learning model generated in the machine learning device 200 based on this data set, for example, outputs a predicted value of the average line width in the divided area at n in response to inputs of the rotation speed of the wafer W and the moving speed of the nozzle. In step S12, as the calculation formula of the evaluation score, for example, the calculation formula of the standard deviation of n line width prediction values is set; as the above-mentioned tolerance level, the tolerance value of the standard deviation is set. Based on the evaluation conditions set in this way, in the machine learning device 200, the recommended values of the rotation speed of the wafer W and the moving speed of the nozzle 31 (for example, the rotation speed of the wafer W = 234 rpm, the moving speed of the nozzle 31 = 22 rpm ), derived as the above recommended processing conditions.

[本實施形態之效果] [Effects of this embodiment]

如同上述說明,本實施形態之基板處理的條件設定支援方法,包含如下步驟:將包含藉由塗布顯影裝置2實行之基板處理的處理條件、及關於該基板處理之品質的實績資料之資料集,輸入至機械學習裝置200,該基板處理包括往晶圓W之處理液的供給;以及根據機械學習裝置200藉由根據複數組資料集的機械學習所產生之模型,即因應處理條件之輸入而將關於基板處理之品質的預測資料輸出之學習模型,導出基板處理的推薦處理條件。 As described above, the substrate processing condition setting support method of this embodiment includes the following steps: preparing a data set including the processing conditions of the substrate processing performed by the coating and developing device 2 and the actual performance data on the quality of the substrate processing, Input to the machine learning device 200, the substrate processing includes supply of processing liquid to the wafer W; and according to the model generated by the machine learning device 200 through machine learning based on a plurality of sets of data sets, that is, in response to the input of the processing conditions, A learning model outputs prediction data regarding the quality of substrate processing, and derives recommended processing conditions for substrate processing.

依此一條件設定支援方法,則根據藉由機械學習產生之學習模型而導出推薦處理條件,故可效率良好地搜尋適當的處理條件。因此,在基板處理的處理條件之設定作業的簡化上有效。 By setting the support method based on this condition, recommended processing conditions are derived based on the learning model generated by machine learning, so appropriate processing conditions can be searched efficiently. Therefore, it is effective in simplifying the work of setting processing conditions for substrate processing.

基板處理之條件設定支援方法,可包含如下步驟:使塗布顯影裝置2遵循推薦處理條件而進一步實行基板處理;進一步取得關於遵循推薦處理條件的基板處理之品質的追加實績資料;將包含推薦處理條件與追加實績資料之追加資料集,進一步輸入至機械學習裝置200;以及根據機械學習裝置200根據追加資料 集所更新的學習模型,更新推薦處理條件。此一情況,藉由推薦處理條件與追加實績資料之反饋,而更新推薦處理條件。因此,可效率良好地搜尋更適當的處理條件。 The substrate processing condition setting support method may include the following steps: making the coating and developing device 2 follow the recommended processing conditions to further perform the substrate processing; further obtaining additional performance data on the quality of the substrate processing following the recommended processing conditions; including the recommended processing conditions. The additional data set and the additional performance data are further input to the machine learning device 200; and the machine learning device 200 based on the additional data Collect the updated learning model and update the recommended processing conditions. In this case, the recommended processing conditions are updated based on feedback from the recommended processing conditions and additional performance data. Therefore, more appropriate processing conditions can be searched for efficiently.

基板處理之條件設定支援方法,可進一步包含評價推薦處理條件之步驟;此外,條件設定支援方法,在推薦處理條件之評價結果達到既定等級為止前,重複下列步驟:使塗布顯影裝置2遵循推薦處理條件而進一步實行基板處理;進一步取得追加實績資料;將追加資料集,進一步輸入至機械學習裝置200;以及根據機械學習裝置200根據追加資料集所更新的學習模型,更新推薦處理條件。此一情況,藉由重複處理,可效率良好地搜尋更適當的處理條件。 The condition setting support method for substrate processing may further include a step of evaluating recommended processing conditions; in addition, the condition setting supporting method repeats the following steps until the evaluation result of the recommended processing conditions reaches a predetermined level: making the coating and developing device 2 follow the recommended processing further perform substrate processing according to the conditions; further obtain additional performance data; further input the additional data set to the machine learning device 200; and update the recommended processing conditions based on the learning model updated by the machine learning device 200 based on the additional data set. In this case, through repeated processing, more appropriate processing conditions can be searched efficiently.

導出推薦處理條件之步驟,可包含如下步驟:將預測資料的評價條件,輸入至機械學習裝置200;以及取得機械學習裝置200根據複數組資料集、學習模型、及評價條件所導出的推薦處理條件。此一情況,推薦處理條件之搜尋,亦藉由機械學習裝置200施行,故可效率更良好地搜尋適當的處理條件。 The step of deriving recommended processing conditions may include the following steps: inputting the evaluation conditions of the prediction data into the machine learning device 200; and obtaining the recommended processing conditions derived by the machine learning device 200 based on the plurality of data sets, learning models, and evaluation conditions. . In this case, the search for recommended processing conditions is also performed by the machine learning device 200, so that appropriate processing conditions can be searched more efficiently.

基板處理之條件設定支援方法,取得包含複數項目之實績值的實績資料;將資料集輸入至產生學習模型的機械學習裝置200,該學習模型,包含因應處理條件之輸入而將複數項目之預測值分別輸出的複數模型式;將評價複數項目之預測值的評價條件,輸入至機械學習裝置200。此一情況,藉由將評價條件展開為複數項目,而更適當地評價處理之品質,可搜尋更適當的處理條件。 The condition setting support method for substrate processing obtains actual performance data including actual performance values of a plurality of items; and inputs the data set to the machine learning device 200 that generates a learning model including predicted values of the plurality of items in response to the input of processing conditions. The plural model equations output respectively; and the evaluation conditions for evaluating the predicted values of the plural items are input to the machine learning device 200 . In this case, by expanding the evaluation conditions into plural items, the quality of the processing can be evaluated more appropriately, and more appropriate processing conditions can be searched.

基板處理之條件設定支援方法,可將包含關於「複數項目的至少一部分之預測值的參差不一」之條件的評價條件,輸入至機械學習裝置200。此一情況,可效率良好地評價複數項目,故可效率良好地搜尋更適當的處理條件。 The condition setting support method for substrate processing can input evaluation conditions including a condition regarding "differences in predicted values of at least a part of a plurality of items" to the machine learning device 200 . In this case, a plurality of items can be evaluated efficiently, and therefore more appropriate processing conditions can be searched efficiently.

基板處理之條件設定支援方法,可取得包含「處理後項目及處理中項目之實績值」的實績資料,該處理後項目表示基板處理後的晶圓W之品質,該處理中項目表示基板處理中途的處理液之供給狀態;根據處理中項目之實績值,而選擇輸入至機械學習裝置200之資料集。此一情況,藉由將處理中之異常直接選取作為處理中的資料,而可將根據處理後之品質的推薦處理條件之搜尋範圍縮窄。因此,可效率更好地搜尋適當的處理條件。 The condition setting support method for substrate processing can obtain performance data including "performance values of post-processing items and in-process items." The post-processing item represents the quality of the wafer W after substrate processing, and the in-processing item represents the substrate processing in progress. The supply status of the processing liquid; and the data set input to the machine learning device 200 is selected based on the actual performance value of the item being processed. In this case, by directly selecting the exception being processed as the data being processed, the search range for recommended processing conditions based on the processed quality can be narrowed. Therefore, appropriate processing conditions can be searched more efficiently.

基板處理之條件設定支援方法,可進一步包含如下步驟:在將資料集輸入至機械學習裝置200前,從該資料集的實績資料,將源自於與基板處理不同因素的成分排除。此一情況,可搜尋更適當的處理條件。 The substrate processing condition setting support method may further include the following steps: before inputting the data set to the machine learning device 200, components originating from factors different from the substrate processing are excluded from the actual performance data of the data set. In this case, more appropriate processing conditions can be searched.

基板處理,可包含顯影處理:將顯影液供給至晶圓W的表面Wa中施行過曝光處理的感光性被覆膜;可取得包含藉由顯影處理而在晶圓W的表面Wa形成之圖案的線寬之實績值的實績資料。基板處理包含顯影處理的情況,為了導出較佳的處理條件,而有需要巨大勞力之傾向。因此,依上述之條件設定支援方法,可效率良好地搜尋適當的處理條件,有效性顯著。 The substrate treatment may include a development process: a developing solution is supplied to the surface Wa of the wafer W and a photosensitive coating film is overexposed; a pattern including a pattern formed on the surface Wa of the wafer W by the development process may be obtained. The actual performance data of the actual performance value of the line width. When substrate processing includes development processing, it tends to require a lot of labor in order to derive better processing conditions. Therefore, setting the support method based on the above conditions can efficiently search for appropriate processing conditions, and the effectiveness is remarkable.

基板處理,可包含成膜處理:在晶圓W的表面Wa塗布成膜液以形成被覆膜;可取得包含藉由成膜處理而在晶圓W的表面Wa形成之被覆膜的膜厚之實績值的實績資料。基板處理包含成膜處理的情況,基板處理之品質,對於處理條件亦 非常敏感,故為了導出較佳的處理條件而有需要具大勞力之傾向。因此,依上述之條件設定支援方法,可效率良好地搜尋適當的處理條件,有效性顯著。 Substrate processing may include a film forming process: coating a film forming liquid on the surface Wa of the wafer W to form a coating film; the film thickness may include the film formed on the surface Wa of the wafer W by the film forming process. Performance data of actual performance values. When substrate processing includes film formation processing, the quality of substrate processing also depends on the processing conditions. It is very sensitive, so it tends to require a lot of labor in order to derive better processing conditions. Therefore, setting the support method based on the above conditions can efficiently search for appropriate processing conditions, and the effectiveness is remarkable.

以上,對實施形態予以說明,但本發明所揭露之內容不必非得限定於上述實施形態,在不脫離其要旨之範疇,可進行各式各樣的變更。例如,處理對象之基板不限於半導體晶圓,例如亦可為玻璃基板、遮罩基板、FPD(Flat Panel Display,平板顯示器)等。 The embodiments have been described above. However, the contents disclosed in the present invention are not necessarily limited to the above-described embodiments, and various changes can be made without departing from the gist of the invention. For example, the substrate to be processed is not limited to a semiconductor wafer, but may also be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc.

S01~S09,S11~S14:步驟 S01~S09, S11~S14: steps

Claims (20)

一種基板處理之條件設定支援方法,包含如下步驟:將包含藉由基板處理裝置實行之基板處理的處理條件、及關於該基板處理之品質的實績資料之資料集,輸入至機械學習裝置,該基板處理包含對於基板之處理液的供給;根據該機械學習裝置藉由根據複數組該資料集的機械學習所產生之模型,即因應該處理條件之輸入而將關於該基板處理之品質的預測資料輸出之學習模型,導出該基板處理的推薦處理條件;取得包含「處理後項目及處理中項目之實績值」的該實績資料,該處理後項目表示該基板處理後的該基板之品質,該處理中項目表示該基板處理中途之對於該基板的處理液之供給狀態;以及根據該處理中項目之實績值,選擇輸入至該機械學習裝置之資料集。 A condition setting support method for substrate processing, including the following steps: inputting a data set including processing conditions for substrate processing performed by a substrate processing device and actual performance data on the quality of the substrate processing into a machine learning device. The processing includes supplying a processing liquid to the substrate; according to a model generated by the machine learning device through machine learning based on the complex data set, prediction data on the quality of the substrate processing is output based on the input of the processing conditions. The learning model is used to derive the recommended processing conditions for the substrate processing; obtain the performance data including "the performance values of the processed items and the items being processed". The processed items represent the quality of the substrate after the substrate is processed. The processed items The item indicates the supply status of the processing liquid to the substrate during processing of the substrate; and a data set to be input to the machine learning device is selected based on the actual performance value of the item in processing. 如申請專利範圍第1項之基板處理之條件設定支援方法,更包含如下步驟:使該基板處理裝置遵循該推薦處理條件而進一步實行該基板處理;進一步取得關於遵循該推薦處理條件的該基板處理之品質的追加實績資料;將包含該推薦處理條件與該追加實績資料之追加資料集,進一步輸入至該機械學習裝置;以及根據「該機械學習裝置根據該追加資料集所更新的該學習模型」,更新該推薦處理條件。 For example, the condition setting support method for substrate processing in item 1 of the patent application further includes the following steps: making the substrate processing device comply with the recommended processing conditions to further perform the substrate processing; and further obtaining information on the substrate processing that follows the recommended processing conditions. additional performance data of the quality; further input the additional data set including the recommended processing conditions and the additional performance data into the machine learning device; and "the learning model updated by the machine learning device based on the additional data set" , update the recommended processing conditions. 如申請專利範圍第2項之基板處理之條件設定支援方法,更包含評價該推薦處理條件之步驟;在該推薦處理條件之評價結果達到既定等級為止前,重複下列步驟:使該基板處理裝置遵循該推薦處理條件而進一步實行該基板處理;進一步取得該追加實績資料;將該追加資料集進一步輸入至該機械學習裝置;以及根據「該機械學習裝置根據該追加資料集所更新的該學習模型」,更新該推薦處理條件。 For example, the substrate processing condition setting support method in item 2 of the patent application further includes steps for evaluating the recommended processing conditions; until the evaluation results of the recommended processing conditions reach a predetermined level, repeat the following steps: make the substrate processing device comply with further execute the substrate processing according to the recommended processing conditions; further obtain the additional performance data; further input the additional data set into the machine learning device; and "the learning model updated by the machine learning device based on the additional data set" , update the recommended processing conditions. 如申請專利範圍第1至3項中任一項之基板處理之條件設定支援方法,其中,導出該推薦處理條件之步驟,包含如下步驟:將該預測資料的評價條件,輸入至該機械學習裝置;以及取得該機械學習裝置根據該複數組資料集、該學習模型、該評價條件所導出的該推薦處理條件。 For example, the condition setting support method for substrate processing in any one of the patented scope items 1 to 3, wherein the step of deriving the recommended processing conditions includes the following steps: inputting the evaluation conditions of the predicted data into the machine learning device ; and obtain the recommended processing conditions derived by the machine learning device based on the plurality of data sets, the learning model, and the evaluation conditions. 如申請專利範圍第4項之基板處理之條件設定支援方法,其中,取得包含複數項目之實績值的該實績資料;將該資料集輸入至產生該學習模型的該機械學習裝置,該學習模型,包含因應該處理條件之輸入而將該複數項目之預測值分別輸出的複數模型式;將評價該複數項目之預測值的該評價條件,輸入至該機械學習裝置。 For example, the condition setting support method for substrate processing in Item 4 of the patent application scope, wherein the performance data including the performance values of a plurality of items is obtained; the data set is input to the machine learning device that generates the learning model, and the learning model, It includes a complex model equation that outputs the predicted values of the plurality of items respectively in response to the input of the processing condition; and the evaluation condition for evaluating the predicted value of the plurality of items is input to the machine learning device. 如申請專利範圍第5項之基板處理之條件設定支援方法,其中,將包含關於「該複數項目的至少一部分之預測值的參差不一」之條件的該評價條件,輸入至該機械學習裝置。 For example, the condition setting support method for substrate processing in claim 5 of the patent scope includes inputting the evaluation condition including a condition regarding "variation in the predicted values of at least a part of the plurality of items" into the machine learning device. 如申請專利範圍第1或2項之基板處理之條件設定支援方法,更包含如下步驟:在將該資料集輸入至該機械學習裝置前,從該資料集的該實績資料,將源自於與該基板處理不同因素的成分排除。 For example, the condition setting support method for substrate processing in Item 1 or 2 of the patent scope further includes the following steps: before inputting the data set into the machine learning device, the actual performance data from the data set will be derived from The substrate handles different factors of composition exclusion. 如申請專利範圍第1或2項之基板處理之條件設定支援方法,其中,該基板處理,包含顯影處理:將顯影液供給至該基板的表面中施行過曝光處理的感光性被覆膜;取得包含藉由該顯影處理而在該基板的表面形成之圖案的線寬之實績值的該實績資料。 For example, the condition setting support method for substrate processing in claim 1 or 2, wherein the substrate processing includes development processing: supplying a developing solution to the photosensitive coating film that has been overexposed on the surface of the substrate; obtaining The performance data includes the performance value of the line width of the pattern formed on the surface of the substrate by the development process. 如申請專利範圍第1或2項之基板處理之條件設定支援方法,其中,該基板處理,包含成膜處理:在該基板的表面塗布成膜液以形成被覆膜;取得包含藉由該成膜處理而在該基板的表面形成之該被覆膜的膜厚之實績值的該實績資料。 For example, the condition setting support method for substrate processing in Item 1 or 2 of the patent application scope, wherein the substrate processing includes film forming processing: coating a film forming liquid on the surface of the substrate to form a coating film; The performance data of the film thickness of the coating film formed on the surface of the substrate by film treatment. 一種基板處理之條件設定支援方法,包含如下步驟:取得包含用於基板處理之設定的處理條件、及關於遵循該處理條件的該基板處理之品質的實績資料之資料集,該基板處理包含對於基板之處理液的供給;藉由根據複數組該資料集的機械學習,而產生因應該處理條件之輸入而將關於該基板處理之品質的預測資料輸出之學習模型;取得包含「處理後項目及處理中項目之實績值」的該實績資料,該處理後項目表示該基板處理後的該基板之品質,該處理中項目表示該基板處理中途之對於該基板的處理液之供給狀態;以及根據該處理中項目之實績值,選擇該機械學習所根據之該複數組該資料集。 A condition setting support method for substrate processing, including the following steps: obtaining a data set including set processing conditions for substrate processing and actual performance data on the quality of the substrate processing following the processing conditions, the substrate processing including the substrate processing conditions. The supply of processing liquid; through machine learning based on a plurality of sets of data, a learning model is generated that outputs prediction data about the quality of the substrate processing based on the input of the processing conditions; the acquisition includes "processed items and processing The performance data of "Achievement Value of Medium Project", the processed item represents the quality of the substrate after the substrate is processed, the processed item represents the supply status of the processing liquid to the substrate during the processing of the substrate; and according to the processing Based on the performance value of the winning project, select the complex data set on which the machine learning is based. 如申請專利範圍第10項之基板處理之條件設定支援方法,更包含如下步驟:根據該複數組資料集、該學習模型、及該預測資料的評價條件,導出該基板處理的推薦處理條件。 For example, the condition setting support method for substrate processing in Item 10 of the patent application further includes the following steps: deriving recommended processing conditions for the substrate processing based on the evaluation conditions of the plurality of data sets, the learning model, and the prediction data. 如申請專利範圍第11項之基板處理之條件設定支援方法,其中,藉由該機械學習產生該學習模型之步驟,包含藉由遺傳程式搜尋該學習模型之運算過程;導出該推薦處理條件之步驟,包含藉由遺傳演算法搜尋該推薦處理條件之運算過程。 For example, the condition setting support method for substrate processing in the patent application scope 11, wherein the step of generating the learning model through the machine learning includes the calculation process of searching the learning model through genetic programming; the step of deriving the recommended processing conditions , including the operation process of searching for the recommended processing conditions through genetic algorithms. 如申請專利範圍第11或12項之基板處理之條件設定支援方法,其中,取得該實績資料包含有複數項目之實績值的該資料集;產生該學習模型,該學習模型包含因應該處理條件之輸入而將該複數項目之預測值分別輸出的複數模型式;根據該複數組資料集、該複數模型式、及評價該複數項目之預測值的該評價條件,導出該推薦處理條件。 For example, the condition setting support method for substrate processing in Item 11 or 12 of the patent application, wherein the performance data includes the data set containing the performance values of a plurality of items is obtained; the learning model is generated, and the learning model includes the processing conditions corresponding to the processing conditions. Input a complex model equation that outputs the predicted values of the plural items respectively; derive the recommended processing conditions based on the complex group data set, the complex model equation, and the evaluation conditions for evaluating the predicted values of the plural items. 如申請專利範圍第13項之基板處理之條件設定支援方法,其中,根據包含關於「該複數項目之預測值的參差不一」之條件的該評價條件,導出該推薦處理條件。 For example, the condition setting support method for substrate processing in claim 13 of the patent scope, wherein the recommended processing conditions are derived based on the evaluation conditions including conditions regarding "variations in the predicted values of the plurality of items". 一種基板處理系統,包含:處理部,施行基板處理,該基板處理包含對於基板之處理液的供給; 處理控制部,遵循預先設定的處理條件,使該處理部實行該基板處理;資料取得部,取得關於遵循該處理條件的該基板處理之品質的實績資料;資料輸入部,將包含該處理條件與該實績資料之資料集,輸入至模型產生部;以及推薦條件導出部,以因應該處理條件之輸入而將關於該基板處理之品質的預測資料輸出之方式,根據該模型產生部藉由根據複數組該資料集的機械學習所產生之學習模型,導出該基板處理的推薦處理條件;該資料取得部,取得包含「處理後項目及處理中項目之實績值」的該實績資料,該處理後項目表示該基板處理後的該基板之品質,該處理中項目表示該基板處理中途之對於該基板的處理液之供給狀態;該資料輸入部,根據該處理中項目之實績值,選擇輸入至該模型產生部之該資料集。 A substrate processing system includes: a processing unit that performs substrate processing, and the substrate processing includes supply of a processing liquid to the substrate; The processing control unit causes the processing unit to perform the substrate processing according to the preset processing conditions; the data acquisition unit obtains actual performance data on the quality of the substrate processing following the processing conditions; the data input unit includes the processing conditions and The data set of the actual performance data is input to the model generation unit; and the recommendation condition derivation unit outputs prediction data on the quality of the substrate processing in response to the input of the processing conditions. The learning model generated by machine learning of the data set is assembled to derive the recommended processing conditions for the substrate processing; the data acquisition unit obtains the performance data including "the actual performance values of the processed items and the items being processed", and the processed items Indicates the quality of the substrate after the substrate is processed. The in-process item indicates the supply status of the processing liquid to the substrate during the substrate processing. The data input unit selects and inputs to the model based on the actual performance value of the in-process item. Generate the data set of the department. 如申請專利範圍第15項之基板處理系統,更包含該模型產生部。 For example, the substrate processing system in Item 15 of the patent application also includes the model generation unit. 如申請專利範圍第15或16項之基板處理系統,其中,該推薦條件導出部,包含:評價條件輸入部,將該預測資料的評價條件,輸入至條件搜尋部;以及搜尋結果取得部,取得該條件搜尋部根據該複數組資料集、該學習模型、及該評價條件所導出的該推薦處理條件。 For example, if the substrate processing system of the patent scope 15 or 16 is applied for, the recommendation condition derivation unit includes: an evaluation condition input unit, which inputs the evaluation conditions of the predicted data into the condition search unit; and a search result acquisition unit, which obtains The condition search unit derives the recommendation processing condition based on the plurality of data sets, the learning model, and the evaluation condition. 如申請專利範圍第17項之基板處理系統,更包含該條件搜尋部。 For example, the substrate processing system in item 17 of the patent scope includes a search part for this condition. 一種電腦可讀取記錄媒體,記錄有用於使裝置實行如申請專利範圍第1項之基板處理之條件設定支援方法的程式。 A computer-readable recording medium records a program for causing a device to execute a condition setting support method for substrate processing as claimed in Item 1 of the patent application. 一種學習模型,係以使裝置實行因應藉由基板處理裝置實行之基板處理的處理條件之輸入而將關於該基板處理之品質的預測資料輸出之步驟的方式,藉由根據分別包含該基板處理的處理條件、及關於遵循該處理條件的該基板處理之品質的實績資料之複數組資料集的機械學習而產生;該基板處理,包含對於基板之處理液的供給;該實績資料包含「處理後項目及處理中項目之實績值」,該處理後項目表示該基板處理後的該基板之品質,該處理中項目表示該基板處理中途之對於該基板的處理液之供給狀態;該機械學習所根據之該複數組資料集,係根據該處理中項目之實績值來選擇。 A learning model that causes an apparatus to execute a step of outputting prediction data on the quality of a substrate process performed by a substrate processing apparatus in response to an input of processing conditions of the substrate process, by using Processing conditions and machine learning of multiple sets of data sets on the quality of the substrate processing that comply with the processing conditions are generated; the substrate processing includes the supply of processing liquid to the substrate; the performance data includes "processed items" and the actual performance value of the item being processed", the item after processing represents the quality of the substrate after processing of the substrate, and the item in process represents the supply status of the processing liquid to the substrate during the processing of the substrate; the machine learning is based on This plural group data set is selected based on the actual performance value of the item being processed.
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