TWI821799B - Substrate processing equipment - Google Patents

Abstract

[Problem] Provide a substrate processing apparatus that can efficiently process a substrate transported by a transport device. [Solution] The substrate processing apparatus in the embodiment is to spray a high-pressure process from the nozzle 10a disposed above the transport device in the processing chamber 100 on the substrate to be processed with the front side facing up and being transported by the transport device. A substrate processing apparatus for processing the front surface of the substrate W with a fluid. The substrate processing apparatus has a partition plate 12. The partition plate 12 is disposed on the downstream side of the nozzle 10a in the conveying direction Dt of the substrate W, and prevents the substrate W from being exposed to the high pressure. The gas flow generated by the flow introduction of the processing fluid flows toward the downstream side, the high-pressure processing fluid is sprayed from the nozzle 10a toward the front surface of the substrate W, and the partition plate 12 is disposed between the upper edge of the partition plate 12 and the process A gap Gb is formed between the ceiling portions 103 of the chamber 100 .

Description

Substrate processing equipment

Field of invention

The present invention relates to a substrate processing apparatus for processing a substrate transported by a transport roller or a transport belt.

Background of the invention

For example, in the manufacturing process of a liquid crystal display device, a substrate cleaning device (substrate processing device) is known that supplies a processing liquid (for example, pure water) from a nozzle to the front surface of the substrate to process the front surface of the substrate. In this substrate cleaning apparatus, a nozzle head is disposed facing the front surface of the substrate to be processed with the front surface facing upward and being transported by the transport device. A high-pressure cleaning liquid (high-pressure processing liquid) is ejected from the nozzle head, and the front surface of the conveyed substrate is cleaned by the high-pressure cleaning liquid.

[Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 10-15462

[Outline of the invention]

However, when the pressure of the processing fluid ejected from the nozzle is increased, a phenomenon occurs in which the front end portion or the rear end portion of the substrate floats from the conveyance surface. In particular, thin (for example, a thickness of about 0.5 mm) substrates (glass substrates, liquid crystal substrates, etc.) have a large floating amount, and the substrates may collide with the nozzle or the unloading port of the processing chamber, and may shake during transportation. etc., which may cause damage to the substrate being processed. In addition, since the substrate floats, the distance between the nozzle of the nozzle and the substrate changes, so that the processing liquid cannot be distributed uniformly. supplied to the substrate, the processing may become insufficient. Therefore, the processing liquid cannot be sufficiently pressurized.

The present invention provides a substrate processing apparatus capable of efficiently processing a conveyed substrate.

Summary of the invention

One aspect of the substrate processing apparatus in the present invention is configured as follows. In the processing chamber, a high-pressure process is sprayed from a nozzle arranged above the transport device on a substrate to be processed with the front surface facing upward and being transported by the transport device. The fluid is used to process the front surface of the substrate. The substrate processing device has a partition plate. The partition plate is disposed on the downstream side of the nozzle in the conveyance direction of the substrate and blocks the flow of the high-pressure processing fluid. The airflow flows toward the downstream side, the high-pressure processing fluid is sprayed from the nozzle toward the front surface of the substrate, and the partition plate is arranged to form a gap between the upper edge of the partition plate and the ceiling of the processing chamber.

Furthermore, one aspect of the substrate processing apparatus according to the present invention has a structure in which a substrate to be processed is ejected from a nozzle disposed above the conveying device in the processing chamber with the front surface to be processed facing upward and being conveyed by the conveying device. A high-pressure processing fluid is used to process the front surface of the substrate. The substrate processing device has a fluid enclosure member, and the fluid enclosure member is located below the transport device and includes an area opposite to the nozzle in the transport direction of the substrate. The predetermined range is divided, and the airflow generated by the flow of the high-pressure processing fluid flowing from the nozzle into the predetermined range is prevented from being rolled up above the conveying device.

Furthermore, one aspect of the substrate processing apparatus of the present invention has a structure in which a substrate to be processed is ejected from a nozzle disposed above the conveying device in the processing chamber with the front side to be processed facing upward and being conveyed by the conveying device. High-pressure processing fluid to process the front side of the aforementioned substrate, the aforementioned substrate processing device having a gas introduction obstruction member, the aforementioned gas introduction obstruction member will include the front end of the aforementioned nozzle and The space between the front surfaces of the substrates is separated by a predetermined range in the conveyance direction of the substrates and blocks the introduction of gas into the flow of the high-pressure processing fluid ejected from the nozzles.

1:Substrate processing device

1a:Substrate processing device

10:Nozzle

10a:Nozzle

11: Washing and processing department

12:Divider board

13: Fluid enclosed components

13a: Return to board

13b: Return to board

13c:Return to Department

13d:Return to Department

13e: Horizontal board part

13f: Horizontal board part

14:Upper side treatment liquid pipe

14a:Nozzle

15: Lower side treatment liquid pipe

15a:Nozzle

16: Gas introduction obstruction member

16a: cover plate

16b: cover plate

16c: Opposite plate part

16d: Opposite plate part

16e: Inclined part

16f: Inclined part

20:Conveying device

21:Roller

100:Processing room

101:Move-in entrance

102:Move out

103:ceiling

104: Bottom

110: Washing and processing department

120: Rinse processing department

A:Space

B:space

Dt:Transportation direction

F: force

Ga: gap

Gb: gap

Gc: gap

Gd: gap

W: substrate

FIG. 1 is a diagram illustrating the principle (Part 1) of how the substrate transported by the transport device floats from the transport surface.

FIG. 2 is a diagram illustrating the principle (Part 2) that the substrate transported by the transport device floats from the transport surface.

3 is a side view showing the substrate processing apparatus in the first embodiment of the present invention.

FIG. 4 is a schematic diagram illustrating the function of the partition plate in FIG. 3 .

FIG. 5 is a schematic diagram illustrating the function of the partition plate in FIG. 3 .

FIG. 6 is a schematic diagram illustrating the function of the partition plate in FIG. 3 .

FIG. 7 is a side view showing the substrate processing apparatus in the second embodiment of the present invention.

8 is a top view showing a substrate processing apparatus in a third embodiment of the present invention.

FIG. 9 is a side view showing the structure of the gas introduction inhibiting member in FIG. 8 .

FIG. 10 is a side view showing a first modification of the gas introduction inhibiting member.

FIG. 11 is a side view showing a second modified example of the gas introduction inhibiting member.

FIG. 12 is a side view showing a third modification of the gas introduction inhibiting member.

FIG. 13 is a side view of a substrate processing apparatus according to a fourth embodiment of the present invention.

Before describing the embodiments of the present invention, the reason why the substrate floats from the conveyance surface when a high-pressure processing fluid is sprayed onto the substrate from a spray nozzle of the spray head will be considered.

As shown in FIGS. 1 and 2 , in a processing chamber 100 included in a substrate processing apparatus, a transport device 20 having a plurality of rollers 21 that supports a substrate W (glass substrate, liquid crystal substrate, etc.) from below is used. The substrate W is conveyed in a horizontal state from the carry-in port 101 to the carry-out port 102 . In this manner, the nozzle head 10 is arranged to face the upward front surface of the substrate W being conveyed.

In such a substrate processing apparatus, first, the first reason will be described with reference to FIG. 1 . As indicated by the thick black arrow, high-pressure cleaning liquid (processing fluid) is ejected from the nozzle head 10 toward the front surface of the substrate W. When the cleaning liquid is sprayed out, it will be introduced by the flow of the cleaning liquid. As shown by the thick white arrow, an air flow will be generated around the sprayed cleaning liquid. This air flow is blocked by the substrate W and flows along the front surface of the substrate W at extremely high speed. Due to this high-speed airflow, the upper portion of the substrate W adjacent to the front surface is brought into a negative pressure state according to the Boloisian theorem. As a result, an upward force F acts on the substrate W, and the front end portion (refer to the dotted elliptical portion of FIG. 1 ) of the conveyed substrate W that passes directly under the nozzle head 10 can float due to the upward force F.

Next, the second reason will be described with reference to FIG. 2 . When the rear end of the substrate W passes directly below the nozzle 10, the high-pressure cleaning liquid ejected from the nozzle 10, as indicated by the thick black arrow, passes through the gap between the adjacent rollers 21 and is transported toward the ratio at a high speed. The conveying surface formed by the device 20 also flows downward. Even in this case, as described above, the flow of the cleaning liquid draws in the surrounding gas (air), and an air flow (thick white arrow) is generated around the sprayed cleaning liquid. This air flow rebounds and rolls up after reaching near the bottom in the processing chamber 100, thereby generating an upward air flow. By this upward airflow, the rear end of the substrate W passing through the position directly below the nozzle head 10 can float.

Taking into account the aforementioned reasons for the floating of the substrate W, an embodiment of the present invention that can efficiently process the substrate by preventing or suppressing the floating of the substrate W will be described using drawings.

The substrate processing apparatus in the first embodiment of the present invention is configured as shown in FIG. 3 . This substrate processing apparatus 1 is characterized by having a structure (a partition plate 12 to be described later) for preventing or suppressing floating of the substrate W that may occur due to the reasons explained in FIG. 1 .

In FIG. 3 , the substrate processing apparatus 1 has a processing chamber 100 . The processing chamber 100 is configured to have a side wall in which a carry-in opening 101 is formed and a side wall in which an unloading opening 102 is formed in the direction Dt in which the substrate W is conveyed. It forms a closed space having a ceiling portion 103 and a bottom portion 104 in the vertical direction. In the processing chamber 100, a transport device 20 extending from the import port 101 to the transport port 102 is provided. The conveying device 20 has an axis (not shown) extending in a direction perpendicular to the conveying direction Dt of the substrate W and parallel to the horizontal plane (the direction perpendicular to the paper surface in FIG. 3: hereafter referred to as the "direction perpendicular to the conveying direction"). , and a plurality of rollers 21 installed on the shaft. The shaft (not shown) and the plurality of rollers 21 are arranged in a plurality of groups at predetermined intervals in the conveyance direction Dt. The upper surface of each roller 21 forms a substrate conveyance surface. The substrate W to be processed (for example, a rectangular shape with a thickness of 0.5 mm and a side of 3 m) fed in from the import port 101 is supported by each roller 21 of the transport device 20 and transported toward the export port 102 .

The processing chamber 100 is provided with a cleaning processing unit 110 that performs high-pressure cleaning of the substrate W using a cleaning liquid (an example of a processing fluid), and a cleaning processing unit 110 that performs a rinse processing of the substrate W using a eluent (pure water). The elution processing part 120. In the processing chamber 100 , the cleaning processing unit 110 is located upstream of the rinsing processing unit 120 in the conveyance direction Dt of the substrate W.

In the cleaning processing unit 110 , a plurality of nozzle heads 10 arranged in a direction perpendicular to the conveyance direction are disposed so as to face the upward front surface of the substrate W conveyed by the conveyance device 20 . The plurality of nozzles 10 are fixed to channel members 11 extending in a direction perpendicular to the conveyance direction at predetermined intervals in the processing chamber 100 . Each nozzle head 10 is connected to a supply source of the cleaning liquid through a pipe (illustration omitted). By supplying the high-pressure cleaning liquid from the supply source, the high-pressure (for example, set in the range of 7 MPa to 15 MPa) cleaning liquid is supplied downward (in the vertical direction in FIG. 3 ) from the nozzle 10 a of the nozzle head 10 (high-pressure processing fluid) is ejected (see the thick black arrow in Figure 3). In addition, the plurality of nozzles 10 arranged in a direction perpendicular to the conveyance direction are adjusted to face a shaft constituting the conveyance device 20 and a roller 21 supported on the shaft.

In addition, the partition plate 12 is provided in the cleaning processing section 110, and the partition plate 12 forms a space A located upstream of the partition plate 12 in the conveyance direction Dt of the substrate W, and a space A located on the upstream side of the substrate W. Space B on the downstream side. The partition plate 12 is provided to extend in the vertical direction at a predetermined position downstream of the nozzle heads 10 in the conveyance direction Dt of the substrate W, and is formed to face at least all the nozzle heads 10 in a direction perpendicular to the conveyance direction. Directional length (the length of 10 parts of all nozzles, or a length longer than that). A predetermined gap Ga (first gap) is formed between the lower edge of the partition plate 12 and the substrate W transported by the transport device 20 , and between the upper edge of the partition plate 12 and the ceiling 103 of the processing chamber 100 A predetermined gap Gb (second gap) is formed therebetween. The gap Ga is formed slightly larger than the thickness of the film formed on the front surface of the substrate W by the cleaning liquid ejected from the nozzle 10a, and is larger than the gap between the front end of the nozzle 10a of the shower head 10 and the front surface of the substrate W (for example, 40~ 60mm) is still small (the gap Ga is, for example, 10mm or more). The gap Gb is formed smaller than the gap Ga (for example, 5~10 mm). Furthermore, an adjustment device for the gaps Ga and Gb may also be provided. For example, the partition plate 12 may be supported on a bracket so that it can be slid up and down for adjustment. Alternatively, the partition plate 12 may be divided into two members at the center of the height, and each member may be supported on a bracket so as to be slidable and adjustable up and down, so that the gaps Ga and Gb can be adjusted individually.

In the substrate processing apparatus 1 configured as above, the prevention or suppression of floating of the substrate W will be examined.

The optimal arrangement position of the partition plate 12 and the gaps Ga and Gb are determined by factors such as the gap between the front end of the nozzle 10a and the front surface of the substrate W, the discharge pressure and discharge speed of the cleaning liquid discharged from the nozzle 10a, and, Also consider the following matters and obtain it through experiments, etc. Furthermore, it is considered that when the nozzle 10 is brought as close as possible to the front surface of the substrate W, less gas will come into contact with the sprayed cleaning liquid and less gas will be drawn into the surrounding area. Therefore, the floating of the substrate W will become smaller. Won't happen. However, when the nozzle head 10 is brought too close to the substrate W, there is a risk that the high-pressure cleaning liquid ejected from the nozzle 10 a may damage the pattern or the like on the substrate. On the other hand, when the nozzle head 10 is too far away from the substrate W, the cleaning liquid with the required pressure cannot be supplied to the substrate W, and efficient cleaning processing becomes difficult.

As already described, the gap Ga is preferably slightly larger than the thickness of the cleaning liquid film formed on the front surface of the substrate W, and the flow of the cleaning liquid sprayed from the nozzle 10 a is not blocked by the partition plate 12 . In this embodiment, a gap is formed that blocks (obstructs), for example, about 75% of the thickness of the airflow layer that is introduced into the airflow by ejection of the cleaning liquid. If the gap Ga is made wider than this, it will become different from the conventional knowledge. difference (that is, the substrate W may float as shown in Figures 1 and 2).

Regarding the gap Gb, FIG. 4 shows a case where the gap Gb is not provided, FIG. 5 shows a case where the gap Gb is too wide, and FIG. 6 shows a case where the gap Gb has a preferable size. In FIG. 4 , the existence of the gap Ga restricts the passage of the air flow. However, it becomes a vortex flow in the space B, and this flow causes the substrate W to float. Even in FIG. 5 , the airflow passing through the gap Ga becomes a vortex in the space B. On the way, the airflow passes through the gap Gb and changes into a vortex as large as surrounding the partition plate 12 . This flow causes the substrate W to float. s reason. In contrast, even in FIG. 6 , the presence of the partition plate 12 (because the gap Ga is small) restricts the passage of the air flow. Furthermore, the air flow that has passed through the gap Ga becomes a vortex flow above the substrate W in the space B. However, by forming the gap Gb to an appropriate size, the air flow rising on the surface of the partition plate 12 facing the nozzle 10 a exerts a strong attraction force on the gap Gb. Due to this attractive force, part of the gas that causes the vortex in the space B moves from the space B to the space A via the gap Gb. Therefore, in FIG. 6 , even if an eddy current occurs above the substrate W, it can be suppressed to a level that does not affect the floating of the substrate W. It is considered that the air flow that causes the floating of the substrate W can be suppressed.

Furthermore, the partition plate 12 is provided on the downstream side of the nozzle head 10 in the conveyance direction Dt, and on the upstream side of the position where the substrate W can be lifted. The position at which the substrate W can float can be determined in advance through experiments or the like. For example, the position at which the substrate W can float is determined using the configuration shown in FIGS. 1 and 2 .

Furthermore, the gaps Ga and Gb may be formed by forming one or a plurality of elongated holes in the partition plate 12 . For example, the end portion of the partition plate 12 on the ceiling 103 side may be provided in contact with the ceiling 103 , and a long hole serving as the gap Gb may be provided in a predetermined portion of the partition plate 12 on the ceiling 103 side. The position and number of the long holes, and the size of the long holes are set as previously described to have the same effect as the embodiment shown in FIG. 6 .

Returning to FIG. 3 , the rinse processing unit 120 is provided with a plurality of upper processing liquid pipes 14 on the upper side and a plurality of lower processing liquid pipes 15 on the lower side with the transport device 20 sandwiched between them. Each of the plurality of upper processing liquid pipes 14 and each of the plurality of lower processing liquid pipes 15 extend in a direction perpendicular to the conveyance direction. The plurality of upper processing liquid pipes 14 are arranged at predetermined intervals in the conveying direction Dt of the substrate W. Each of the plurality of lower processing liquid pipes 15 is arranged to face any one of the plurality of upper processing liquid pipes 14 . A plurality of nozzles 14 a opening downward are formed in each upper processing liquid pipe 14 at predetermined intervals, and a plurality of nozzles 15 a opening upward are formed in each lower processing liquid pipe 15 at predetermined intervals. Each of the upper processing liquid pipe 14 and the lower processing liquid pipe 15 is connected to an eluent supply source (not shown) through pipes. The eluent from the supply source is supplied to the upper processing liquid pipe 14, and the eluent is sprayed downward from each nozzle 14a of the upper processing liquid pipe 14. The eluent from the supply source is supplied to the lower processing liquid pipe 15. Each nozzle 15a of the lower processing liquid pipe 15 sprays the eluent upward. The substrate conveyed by the conveying device 20 is processed (rinsed) by the eluent ejected from each nozzle 14a of the upper processing liquid supply pipe 14 and the eluent ejected from each nozzle 15a of the lower processing liquid pipe 15. The front and back sides of W.

In the substrate processing apparatus 1 configured as described above, the substrate W loaded in from the import port 101 and transported by the transport device 20 enters the cleaning processing unit 110 . In the cleaning processing unit 110, the high-pressure cleaning liquid (processing fluid) sprayed from the nozzle 10a is supplied to the front surface of the substrate W transported by the transport device 20, so that foreign matter on the front surface of the substrate W is removed (cleaned). Then, the substrate W transported by the transport device 20 after the processing in the cleaning processing unit 110 is completed enters the next rinsing processing unit 120 . In the rinsing processing unit 120 , the front and back surfaces of the substrate W transported by the transport device 20 are cleaned by the eluent sprayed from the nozzles 14 a and 15 a of the upper processing liquid pipe 14 and the lower processing liquid pipe 15 . Both sides are processed, moved out from the unloading port 102, and moved to the next processing program (for example, drying process).

In the above-mentioned processing of the cleaning processing unit 110, the surrounding gas is introduced by the high-pressure cleaning liquid (see the thick black arrow in FIG. 3) ejected from the nozzle 10a, and the air flow generated by the introduction is along the It flows at high speed against the front surface of the substrate W (refer to the thick white arrow in Figure 3). However, part of the airflow flowing on the front side of the substrate W toward the downstream side of the conveyance direction Dt hits the partition plate 12, and is only an airflow allowed by the gap Ga existing between the lower end of the partition plate 12 and the substrate W (for example, (approximately 25% of the thickness of the airflow layer) will flow further downstream. That is, the existence of the partition plate 12 hinders the high-pressure cleaning by spraying from the nozzle 10. A part of the gas introduced into the net liquid further flows toward the downstream side. This reduces the amount of gas along the front surface of the substrate W on the downstream side of the arrangement position of the partition plate 12 in the substrate conveyance direction. Furthermore, as already explained using FIG. 6 , eddy currents are generated above the substrate W in the space B. However, by the existence of the appropriate gap Gb, this can be suppressed to an extent that does not affect the floating of the substrate W. . Thereby, the negative pressure generated in the upper portion of the substrate W adjacent to the front surface can be reduced (compared to the case where the partition plate 12 is not provided, the negative pressure can be made closer to zero). As a result, the upward force (F shown in FIG. 1 ) acting on the substrate W can be reduced, thereby preventing or suppressing the lifting of the portion (front end portion) of the conveyed substrate W that passes directly under the nozzle head 10 .

According to the substrate processing apparatus in the first embodiment of the present invention described above, the substrate can be processed efficiently. This is to prevent the substrate W from colliding with the nozzle 10 a of the nozzle 10 or the side wall around the unloading port 102 or to suppress the shaking of the substrate W, thereby preventing damage to the substrate. Alternatively, by preventing or suppressing floating of the substrate, the substrate can be transported in a more flat state. Therefore, the substrate W can be cleaned while uniformly supplied with the processing fluid, and the front surface of the substrate can be processed almost uniformly. .

Next, the substrate processing apparatus in the second embodiment of the present invention is configured as shown in FIG. 7 . This substrate processing apparatus is characterized by having a structure (fluid enclosure member 13 to be described later) that prevents floating of the substrate W that may occur due to the reasons explained in FIG. 2 .

In FIG. 7 , the substrate processing apparatus 1 a has a processing chamber 100 similar to the aforementioned first embodiment (see FIG. 3 ), and the processing chamber 100 is equipped with a cleaning processing unit 110 and a rinsing processing unit 120 . In the processing chamber 100, a conveying device 20 extending from the import port 101 to the conveyor port 102 is provided. Like the first embodiment (see FIG. 3 ), the rinse treatment unit 120 is provided with a plurality of upper processing liquid pipes 14 each having a plurality of nozzles 14 a on the upper side with the transport device 20 sandwiched between them, and is provided with a plurality of upper processing liquid pipes 14 on the lower side. A plurality of lower processing liquid pipes 15 having a plurality of nozzles 15a are formed. The eluent is sprayed downward from each nozzle 14a of the upper processing liquid pipe 14, and the eluent is sprayed upward from each nozzle 15a of the lower processing liquid pipe 15.

Furthermore, in the cleaning processing unit 110 , similarly to the first embodiment (see FIG. 3 ), the plurality of nozzles 10 fixed to the channel member 11 at predetermined intervals are arranged so as to be aligned with the substrate W transported by the transport device 20 The front facing upward is opposite. Then, the high-pressure cleaning liquid is sprayed downward from the nozzle 10 a of the shower head 10 .

Furthermore, in the cleaning processing part 110, instead of the partition plate 12 described in the first embodiment (see FIG. 3), the fluid enclosure member 13 is provided below the conveyance device 20 so as to be fixed to the tank. The plurality of nozzles 10 of the molded part 11 face each other. The fluid enclosure member 13 has two return plates 13a and 13b that partition a predetermined range in the conveyance direction Dt of the substrate W below the roller 21 facing the plurality of nozzle heads 10. The upper end of one of the return plates 13a is formed with a return portion 13c that is bent inward and protrudes. The upper end of the other return plate 13b is also formed with a return portion 13d that is bent inward and protruded. A horizontal plate portion 13e is formed between the lower end portion of the return plate 13a, which is one of the two return plates 13a and 13b located on the upstream side in the conveyance direction Dt, and the return portion 13c. The lower end portion of the other return plate 13b is also formed with a horizontal plate portion 13f. The horizontal plate part 13e is provided in the return plate 13a so that it may extend (for example, extend in a horizontal direction) to the upstream side in the conveyance direction Dt, ie, toward the import port 101, rather than the return plate 13a. The horizontal plate part 13f is provided in the return plate 13b so that it may extend to the downstream side in the conveyance direction Dt (for example, extend in a horizontal direction) rather than the return plate 13b. The horizontal plate portion 13e is provided at a higher position than the horizontal plate portion 13f (a position close to the transport device 20) and at a position where the end portion does not interfere with the lower processing liquid pipe 15. The gap between the tops of the return portions 13c and 13d and the lower surface of the substrate W being conveyed is set to about 5 mm to 10 mm. In addition, the roller 21 facing the nozzle head 10 is located between the two return portions 13 c and 13 d of the fluid enclosure member 13 . The return plates 13a and 13b are parallel to each other, facing each other, facing at least all the nozzles 10 (for example, having a length of 10 parts of all the nozzles, or a length longer than that) and extending in a direction perpendicular to the conveyance direction. Each lower portion has a shape approximately parallel to the bottom 104 and forms a space near the bottom 104 of the processing chamber 100 . Like the return plates 13a and 13b, the horizontal plate portions 13e and 13f are formed to extend in a direction perpendicular to the conveyance direction so as to face at least all the nozzle heads 10 (for example, have a length of 10 parts of all the nozzle heads 10, or other lengths thereof). Same length as above).

In the above-mentioned cleaning processing unit 110 (substrate processing apparatus), when the rear end of the substrate W passes directly below the nozzle 10 , the high-pressure cleaning liquid sprayed from the nozzle 10 a of the nozzle 10 passes through the conveyor 20 The fluid flows into the fluid enclosure member 13 at high speed through the gap between the rollers 21 . Then, the cleaning liquid flowing into the fluid enclosure member 13 at a high speed is introduced, thereby generating gas that flows into the fluid enclosure member 13 . Most of the generated airflow will diffuse and extend to the bottom of the processing chamber 100 . In addition, the gas that rebounds from the bottom 104 and flows will change direction downward due to the horizontal plate portions 13e, 13f and the return portions 13c and 13d of the return plates 13a and 13b, thereby preventing the gas from being rolled up from the bottom 104 to the upper side of the conveyance device 20. (Refer to the thick white arrow in Figure 7). In this way, by providing the fluid enclosure member 13, the air flow generated when the high-pressure cleaning liquid is ejected from the nozzle 10a is prevented from being rolled up in the processing chamber 100 (cleaning processing unit 110), so it can be prevented or suppressed from passing through the nozzle. The rear end portion of the substrate W directly below 10 floats (see FIG. 2 ).

Moreover, as shown in FIG. 7, the horizontal plate part 13e is provided so that one end may contact the return plate 13a, and the other end may contact the side wall which forms the introduction port 101. The horizontal plate portion 13f is provided with one end provided on the return plate 13b, and the other end forms an opening of the fluid enclosure member 13 on the side of the shower portion 120. The fluid enclosure member 13 prevents the air flow generated by the cleaning liquid ejected from the nozzle 10 a of the nozzle head 10 from colliding with the bottom of the processing chamber 100 and rebounding toward the transport device 20 side. The airflow generated by the cleaning liquid ejected from the nozzle 10a moves toward the bottom of the processing chamber 100 along the return plates 13a and 13b. The airflow that bounces off the bottom of the processing chamber 100 is partly directed toward the horizontal plate portion 13e and partly toward the horizontal plate portion 13f. The air flow that collides with the horizontal plate portion 13 e does not go upward (to the conveying mechanism 20 side) of the processing chamber 100 but stays in the fluid enclosure member 13 . Although part of the airflow that collides with the horizontal plate portion 13f flows toward the shower portion 120 side, the horizontal plate portion 13f prevents a strong airflow from flowing toward the shower portion 120 side.

Here, as mentioned above, the horizontal plate portion 13e is provided at a higher position than the horizontal plate portion 13f. Therefore, the airflow generated by the cleaning liquid ejected from the nozzle 10a collides with the bottom of the processing chamber 100 and is stopped in the fluid enclosure member 13 by the horizontal plate portions 13e and 13f and the return portions 13c and 13d. In this way, the air pressure within the fluid enclosure member 13 gradually increases, and the amount of airflow flowing into the shower portion 120 from the end of the horizontal plate portion 13f on the shower portion 120 side increases. As a result, the substrate W transported by the transport device 20 may shake. By disposing the horizontal plate portion 13e at a high position, it is possible to prevent the air pressure in the fluid enclosed member 13 from being significantly increased. become high.

According to the invention in the second embodiment described above, the substrate W cleaned by the high-pressure cleaning liquid from the nozzle 10a prevents or suppresses the lifting of the rear end portion, and is transported by the transport device 20 in a stable posture. . Therefore, like the first embodiment of the present invention, the substrate W is prevented from colliding with the side walls around the nozzle 10a or the unloading port 102, and the shaking of the substrate W is suppressed, so that damage to the substrate can be prevented. Furthermore, floating of the substrate W can be prevented or suppressed, and the substrate W can be conveyed in a more flat state. Therefore, the substrate W can be cleaned while being uniformly supplied with the processing fluid. For these reasons, the substrate W can be processed more efficiently.

Next, the substrate processing apparatus in the third embodiment of the present invention will be described using FIGS. 8 and 9 . This substrate processing apparatus replaces the aforementioned partition plate 12 (refer to FIG. 3) or the fluid enclosure member 13 (refer to FIG. 7), and has a flow introduction to prevent air from being ejected at high speed from the nozzle 10a. It is characterized by a structure (gas introduction blocking member 16 to be described later).

The substrate processing apparatus in the third embodiment of the present invention has a processing chamber 100, and is equipped with a cleaning processing unit 110 and a cleaning processing unit 110 in the processing chamber 100. Rinse processing section 120. In the processing chamber 100, a conveying device 20 extending from the import port 101 to the conveyor port 102 is provided. Moreover, the cleaning processing part 110 is provided with a plurality of nozzles 10 fixed to the channel member 11, and the rinsing processing part 120 is provided with a plurality of nozzles 14a each formed on the upper side of the conveying device 20. The upper processing liquid pipe 14 is provided on the lower side of the transport device 20 , and a plurality of lower processing liquid pipes 15 each having a plurality of nozzles 15 a is provided.

As shown in FIGS. 8 and 9 , the cleaning processing unit 110 of the substrate processing apparatus configured as above is provided with a gas introduction blocking member 16 . In addition, in FIG. 8 , the description of the channel 11 , the upper processing liquid pipe 14 and the lower processing liquid pipe 15 is omitted due to the simplification of the drawing. This gas introduction blocking member 16 is provided with two plate-shaped cover plates 16a and 16b respectively extending in a direction perpendicular to the conveyance direction (direction perpendicular to the paper surface in FIG. 9 ). The two cover plates 16a and 16b are formed to have a length that is at least opposite to all the nozzles 10 and have a fixed length. The channel member 11 in which the plurality of nozzles 10 are arranged in a direction perpendicular to the conveyance direction is fixed so as to sandwich the channel member 11 in a direction parallel to the conveyance direction Dt. The two cover plates 16 a and 16 b divide a predetermined range in the conveying direction Dt including the space between the front end of each nozzle head 10 and the front surface of the substrate W conveyed by the conveying device 20 . Furthermore, as shown in FIG. 9 , the lower end portions of the two cover plates 16 a and 16 b are provided to extend further downward than the nozzle 10 a (ejection port) of the shower head 10 . In this embodiment, the gap between the nozzle 10a and the front surface of the substrate is, for example, 40 mm to 60 mm, and the gap between the lower ends of the cover plates 16a, 16b and the front surface of the substrate W is set to about 25 mm to 35 mm.

In such a cleaning processing unit 110 (substrate processing apparatus), when the high-pressure cleaning liquid ejected from the nozzle 10a is ejected, the surrounding gas (see the dotted arrow in FIG. 9 ) is prevented from being introduced by the high-speed flow of the cleaning liquid. That is, the introduction of the high-pressure cleaning liquid sprayed from the nozzle 10a into the surrounding gas, which is a cause of the air flow, is prevented or reduced. Thereby, the airflow caused by the high-speed flow of the cleaning liquid can be blocked and the occurrence of the airflow can be suppressed.

Therefore, while the substrate W is being transported by the transport device 20 , the front end portion of the substrate W passing directly under the nozzle head 10 can be suppressed from floating (see FIG. 1 ), and the rear end portion of the substrate W passing directly below the nozzle head 10 can be suppressed. The end portion is floated (refer to Figure 2) of each. Thereby, similarly to the first embodiment and the second embodiment of the present invention, the substrate can be processed efficiently.

It is desirable that the aforementioned gas introduction blocking member 16 be provided so that the distance between the cover plates 16a, 16b and the nozzle head 10 is as short as possible. The wider the space between the nozzle head 10 and the cover plates 16a and 16b, the easier it will be for the gas existing in the space to be introduced by the cleaning liquid ejected from the nozzle 10a of the nozzle 10, and the easier it will be to generate air flow. . In addition, when the gap between the nozzle head 10 and the cover plates 16a and 16b is wide, it becomes easy for gas to newly enter from the gap between the cover plates 16a and 16b and the front surface of the substrate W, and the gas will be introduced by the force of the cleaning liquid being ejected. Therefore, it is desirable that the positions of the cover plates 16a and 16b be approximately the discharge width of the high-pressure cleaning liquid discharged from the nozzle 10a. As an example in which new gas flows into the space between the cover plates 16a, 16b and the nozzle head 10 to prevent the introduction of the gas caused by the cleaning liquid ejected from the nozzle 10a, each of the configurations shown in Figures 10 to 12 can be used. shown.

The gas introduction blocking member 16 (first modification) shown in FIG. 10 is provided with two facing plate portions 16c and 16d. The two facing plate portions 16c and 16d are formed from the lower ends of the two cover plates 16a and 16b. Each of the two cover plates 16a, 16b protrudes toward the inside of a predetermined range (space) separated by the two cover plates 16a and 16b, and faces each other at a predetermined interval. The two opposing plate portions 16c and 16d are provided across the entire length of the cover plates 16a and 16b in the longitudinal direction. The distance between the two opposing plate portions 16c and 16d is set to approximately the discharge width of the high-pressure cleaning liquid discharged from the nozzle 10a. According to the gas introduction blocking member 16, there is no interference with the supply of the compressed processing fluid jetted from the nozzle 10a, and the introduction of surrounding gas can be further reduced. Therefore, floating of the substrate W can be further suppressed.

The gas introduction blocking member 16 (second modification) shown in FIG. 11 has inner surfaces provided on two cover plates 16a and 16b and is inclined to protrude in the direction of discharge of the high-pressure cleaning liquid from the nozzle 10a. Inclined portions 16e, 16f inclined members). The two inclined portions 16e and 16f are provided across the entire length of the cover plates 16a and 16b in the longitudinal direction. The gap at the lower end of the inclined portions 16e and 16f is set to approximately the discharge width of the high-pressure cleaning liquid discharged from the nozzle 10a. Even with such a gas introduction blocking member 16, the same effects as those of the opposing plate portions 16c and 16d shown in Fig. 10 can be obtained.

The two cover plates 16a and 16b constituting the gas introduction obstruction member 16 are arranged inside the channel member 11 as shown in FIG. The spray width of the cleaning liquid is about 30% (third modification). According to such a gas introduction blocking member 16, the same effect can be obtained even if the opposing plate parts 16c and 16d shown in FIG. 10 or the inclined parts 16e and 16f shown in FIG. 11 are not provided.

According to the invention in the third embodiment described above, when the high-pressure cleaning liquid is ejected from the nozzle 10a, the surrounding gas is prevented or reduced from being introduced into the high-speed flow of the cleaning liquid. Thereby, floating of the substrate can be prevented or suppressed, and the substrate can be processed efficiently.

In each of the aforementioned embodiments, the partition plate 12 (first embodiment: see FIG. 3 ), the fluid enclosure member 13 (second embodiment: see FIG. 4 ), and the gas introduction blocking member 16 (second embodiment: see FIG. 4 ) 3 implementation type: parameter 8 to 12) are separately provided in the cleaning processing part 110. However, it is not limited to this, and any two or three of the partition plate 12, the fluid enclosure member 13, and the gas introduction blocking member 16 may be combined to be applied to the cleaning processing unit 110 (substrate processing apparatus). By these combinations, it is possible to more reliably prevent the transported substrate W from floating.

FIG. 13 shows a combination of the fluid enclosure member 13 of the second embodiment (see FIG. 7 ) and the gas introduction blocking member 16 of the third embodiment (see FIG. 3 ) in the first embodiment illustrated in FIG. 3 . 9) example. Since each function has been described in each implementation type, it is omitted.

In this embodiment, the discharge pressure from the nozzle is 7MPa to 15MPa, the gap Ga (first gap) is 10mm or more, the gap Gb (second gap) is 5mm to 10mm, and the tip of the nozzle 10a and the substrate W are The gap Gc (third gap) on the front surface is 40 mm to 60 mm, and the gap Gd (4th gap) between the lower end parts of the cover plates 16 a and 16 b and the front surface of the substrate W is 25 mm ~ 35 mm. That is, when Gc>Gd>Ga>Gb is adjusted, floating of the substrate W being transported can be reliably prevented or suppressed.

In each of the aforementioned embodiments, a cleaning liquid is used as the processing liquid. However, the present invention is not limited thereto. The processing fluid may be any liquid, gas, or mixture of gases and liquids necessary for processing the substrate W. Either one will do.

Although the aforementioned substrate processing device is a substrate cleaning device (cleaning processing unit 110) that performs cleaning processing on the front surface of the substrate W, there is no particular requirement as long as the substrate is processed by the high-pressure processing fluid ejected from the nozzle. limited.

In addition, in the embodiment, although the conveying device is constituted by rollers, it may also be conveyed by a conveyor belt. In particular, in the second embodiment where the conveyor belt is used for conveyance, a gas-permeable conveyor belt may be used, or both ends of the substrate in the direction perpendicular to the conveyance direction may be supported by separate conveyor belts. Transport. In addition, although the substrate is conveyed in a horizontal state, it may be conveyed with an inclination (for example, about 10 degrees) to the horizontal direction.

Furthermore, in each embodiment, a plurality of nozzles 10 are arranged in one row, but they may also be arranged in a row. Therefore, a plurality of rows are arranged in a direction orthogonal to the conveyance direction.

Furthermore, for example, in FIG. 3 , the air flow introduced by the flow of the cleaning liquid ejected from the nozzle 10 a and directed to the upstream side in the conveyance direction Dt of the substrate W runs from the introduction port 101 to the outside of the processing chamber 100 , so it is The transportation of the substrate W has little influence. Therefore, even when there is no discharge port such as an inlet, the partition plate 12 may be arranged on the upstream side with respect to the nozzle 10a. Alternatively, an exhaust device may be provided in the processing chamber 100 .

Several embodiments and modifications of each part of the present invention have been described above. However, these embodiments or modifications of each part are presented as examples and are not intended to limit the scope of the invention. The novel implementation forms described above can be implemented in various other forms, and various omissions, substitutions and changes can be made without departing from the scope of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the patent application.

1:Substrate processing device

10:Nozzle

10a:Nozzle

11: Washing and processing department

12:Divider board

14:Upper side treatment liquid pipe

14a:Nozzle

15: Lower side treatment liquid pipe

15a:Nozzle

20:Conveying device

21:Roller

100:Processing room

101:Move-in entrance

102:Move out

103:ceiling

104: Bottom

110: Washing and processing department

120: Rinse processing department

A:Space

B:space

Dt:Transportation direction

Ga: gap

Gb: gap

W: substrate

Claims (11)

A substrate processing device that sprays a high-pressure processing fluid from a nozzle arranged above the transport device to process the front surface of the substrate when the substrate to be processed is faced upward and transported by a transport device in a processing chamber. The substrate The processing device has a partition plate, and the partition plate is disposed on a downstream side of the nozzle in the conveyance direction of the substrate, and prevents the gas flow generated by the flow introduction of the high-pressure processing fluid from flowing toward the downstream side. The nozzle sprays toward the front surface of the substrate, the partition plate is arranged to form a gap between the upper edge of the partition plate and the ceiling of the processing chamber, and the partition plate is arranged so that the lower edge of the partition plate and The distance between the front surface of the substrate and the front surface of the substrate is smaller than the distance between the tip of the nozzle and the front surface of the substrate. A substrate processing device that sprays a high-pressure processing fluid from a nozzle arranged above the transport device to process the front surface of the substrate when the substrate to be processed is faced upward and transported by a transport device in a processing chamber. The substrate The processing device has a partition plate, and the partition plate is disposed on a downstream side of the nozzle in the conveyance direction of the substrate, and prevents the gas flow generated by the flow introduction of the high-pressure processing fluid from flowing toward the downstream side. The nozzle sprays toward the front surface of the substrate, the partition plate is arranged to form a gap between the upper edge of the partition plate and the ceiling of the processing chamber, and the gap between the upper edge of the partition plate and the ceiling of the processing chamber is The gap between them is smaller than the gap between the lower edge of the partition plate and the front surface of the base plate. The substrate processing apparatus of Claim 1, wherein the gap between the upper edge of the partition plate and the ceiling of the processing chamber is smaller than the gap between the lower edge of the partition plate and the front surface of the substrate. A substrate processing device that sprays a high-pressure processing fluid from a nozzle arranged above the transport device to process the front surface of the substrate when the substrate to be processed is faced upward and transported by a transport device in a processing chamber. The substrate The processing device has a fluid enclosure member, which is located below the conveyance device, separates a predetermined range including an area opposite the nozzle in the conveyance direction of the substrate, and prevents the fluid enclosure from being moved within the predetermined range. The air flow generated by the flow introduction of the high-pressure processing fluid flowing in from the nozzle is rolled up above the conveying device. The substrate processing apparatus according to claim 4, wherein the fluid enclosure member has: a pair of return plates that separate the predetermined range in the conveyance direction; and a return portion formed at the respective upper end portions of the pair of return plates and facing toward Medial protrusion. The substrate processing apparatus of claim 5, wherein the fluid enclosure member further includes: a lateral plate portion extending from the upstream return plate of the pair of return plates toward the upstream side in the conveyance direction of the substrate, and from a pair of return plates. For the lateral plate portion of the return plate on the downstream side in the conveyance direction of the substrate that extends toward the downstream side, the lateral plate portion extending toward the upstream side is provided higher than the lateral plate portion extending toward the downstream side. s position. A substrate processing device that sprays a high-pressure processing fluid from a nozzle disposed above the transport device to process the front surface of the substrate, with the front surface to be processed facing upward and being transported by a transport device in a processing chamber, the above-mentioned The substrate processing apparatus includes a gas introduction blocking member that divides a predetermined range in the conveying direction of the substrate including a space between a front end of the nozzle and a front surface of the substrate, and blocks the direction of the gas ejected from the nozzle. To introduce the flow of high-pressure processing fluid, the gas introduction obstruction member includes: two cover plates that separate the predetermined range, and Two opposing plate portions protrude inward of the predetermined range from each of the lower end portions of the two cover plates and face each other at a predetermined interval. A substrate processing device that sprays a high-pressure processing fluid from a nozzle disposed above the transport device to process the front surface of the substrate, with the front surface to be processed facing upward and being transported by a transport device in a processing chamber, the above-mentioned The substrate processing apparatus includes a gas introduction blocking member that divides a predetermined range in the conveying direction of the substrate including a space between a front end of the nozzle and a front surface of the substrate, and blocks the direction of the gas ejected from the nozzle. To introduce the flow of high-pressure processing fluid, the gas introduction obstruction member includes: two cover plates that separate the predetermined range, and an inclined member. The inclined member is provided on the respective inner surfaces of the two cover plates and is inclined toward the direction from which the gas is introduced. The direction in which the high-pressure processing fluid is ejected from the nozzle gradually extends. The substrate processing apparatus according to claim 1 or 2, which has a fluid enclosure member that separates a predetermined range in the conveying direction of the substrate below the conveying device opposite to the nozzle and prevents the The gas generated by being introduced into the predetermined range by the flow of the high-pressure processing fluid flowing from the nozzle from above is rolled up above the conveying device. The substrate processing apparatus according to any one of claims 1 to 6, further comprising: a gas introduction blocking member that blocks the space between the front end of the nozzle and the front surface of the substrate to a predetermined direction in the conveyance direction of the substrate. The range is separated and hinders the introduction of gas toward the flow of the high-pressure processing fluid sprayed from the aforementioned nozzle. A substrate processing device that sprays a high-pressure processing fluid from a nozzle disposed above the transport device to process the front surface of the substrate, with the front surface to be processed facing upward and being transported by a transport device in a processing chamber, the above-mentioned The substrate processing device has: The partition plate is disposed on the downstream side of the nozzle in the conveyance direction of the substrate, and prevents the gas flow generated by the flow introduction of the high-pressure processing fluid from flowing toward the front surface of the substrate from the nozzle. Ejection; a fluid enclosure member that separates a predetermined range in the conveying direction of the substrate below the conveying device opposite to the nozzle, and hinders the high-pressure processing fluid from the nozzle flowing in from above within the predetermined range. The air flow generated by the introduction of the flow is rolled up above the conveying device; and two cover plates separate a predetermined range of the space between the front end of the nozzle and the front surface of the substrate in the conveying direction of the substrate to prevent gas A first gap between the lower edge of the partition plate and the front surface of the substrate, and a third gap between the upper edge of the partition plate and the ceiling of the processing chamber are introduced into the flow of the high-pressure processing liquid sprayed from the nozzle. The relationship between the 2 gaps, the third gap between the front end of the nozzle and the front surface of the substrate, and the fourth gap between each of the cover plates and the front surface of the substrate is: 3rd gap > 4th gap > 1st gap > 2nd gap.

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