TWI741062B - Manufacturing method of glass substrate - Google Patents

Manufacturing method of glass substrate Download PDF

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TWI741062B
TWI741062B TW106138538A TW106138538A TWI741062B TW I741062 B TWI741062 B TW I741062B TW 106138538 A TW106138538 A TW 106138538A TW 106138538 A TW106138538 A TW 106138538A TW I741062 B TWI741062 B TW I741062B
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glass substrate
gas
processing space
flushing gas
conveying direction
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TW106138538A
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Chinese (zh)
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TW201830514A (en
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中弘樹
山本好晴
大野和宏
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日商日本電氣硝子股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063Transporting devices for sheet glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B35/00Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Cleaning In General (AREA)
  • Liquid Crystal (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一種玻璃基板之製造方法,係當一邊將玻璃基板(2)以平放姿勢朝搬運方向搬運,使其通過形成於對向配置的本體部(5a)與頂板部(5b)之相互間的處理空間(13),一邊藉由從設在本體部(5a)的供氣口(14)朝處理空間(13)供給的處理氣體(4),對玻璃基板(2)的下表面(2a)實施蝕刻處理時,朝搬運方向的下游側噴射第一沖洗用氣體(6),使得在形成於玻璃基板(2)中之進入到處理空間(13)的部位與頂板部(5b)之間的間隙(13a),形成沿著搬運方向之第一沖洗用氣體(6)的氣流之玻璃基板(2)之製造方法,其特徵為:在玻璃基板(2)的最後部分(2e)進入到處理空間(13)之前,停止進行第一沖洗用氣體(6)的噴射。A method for manufacturing a glass substrate. The glass substrate (2) is transported in a horizontal position in the conveying direction and passed between the main body part (5a) and the top plate part (5b) formed in the opposite arrangement. The space (13) is applied to the lower surface (2a) of the glass substrate (2) by the processing gas (4) supplied from the gas supply port (14) provided in the main body (5a) to the processing space (13) During the etching process, the first flushing gas (6) is sprayed toward the downstream side of the conveying direction, so that the gap between the part that enters the processing space (13) and the top plate (5b) formed in the glass substrate (2) (13a), a method for manufacturing a glass substrate (2) that forms a flow of the first flushing gas (6) along the conveying direction, characterized in that the last part (2e) of the glass substrate (2) enters the processing space Before (13), stop the injection of the first flushing gas (6).

Description

玻璃基板之製造方法Manufacturing method of glass substrate

[0001] 本發明係關於包含一邊將玻璃基板以平放姿勢搬運,一邊藉由氟化氫等的處理氣體,對玻璃基板的下表面實施蝕刻處理之製程的玻璃基板之製造方法。[0001] The present invention relates to a method for manufacturing a glass substrate including a process of etching the lower surface of the glass substrate with a processing gas such as hydrogen fluoride while conveying the glass substrate in a flat position.

[0002] 如習知一樣,玻璃基板係液晶顯示器、電漿顯示器、有機EL顯示器、場發射顯示器等所代表之平板顯示器、智慧手機、平板電腦等的行動終端等為首,被各種電子裝置所採用。   [0003] 在此玻璃基板之製造製程,會有因靜電所引起之問題。舉個例子,如當載置於為了對玻璃基板實施預定的處理之支承台上時,會有因靜電造成玻璃基板黏貼於支承台之情況。在這樣的情況,當將處理完成之玻璃基板從支承台舉起時,會有玻璃基板破損之情況。   [0004] 因此,作為解決這種問題之對策,在實施預定的處理之前,藉由氟化氫等的處理氣體對玻璃基板的表面實施蝕刻處理,將表面粗糙化,藉此迴避因靜電所引起之問題產生的方法為眾所皆知。又,在專利文獻1,揭示有用來對玻璃基板的表面實施蝕刻處理之方法的一例。   [0005] 在該專利文獻所揭示的方法,一邊將玻璃基板以平放姿勢搬運,一邊藉由配置於該搬運路徑上的處理器(在該專利文獻中為表面處理裝置)所供給的處理氣體(在該專利文獻中的反應氣體),僅對玻璃基板的上下表面中之下表面,實施蝕刻處理。   [0006] 使用於該方法之處理器,係具備有在上下隔著玻璃基板的搬運路徑而相對向之上部構成體(在該專利文獻中的頂板)和下部構成體(在該專利文獻中的底部構造體),在兩構成體的相互間形成有用來實施蝕刻處理的處理空間(在該專利文獻中的反應室)。下部構成體係具備有:對處理空間供給處理氣體之供氣口;及從處理空間排出處理氣體用之排氣口。   [0007] 又,在該方法,一邊從供氣口對處理空間供給處理氣體,並且藉由排氣口從處理空間排出處理氣體,一邊對伴隨搬運而通過處理空間之玻璃基板的下表面實施蝕刻處理,藉此使下表面粗糙化。又,在該方法,用來僅使玻璃基板的下表面粗糙化之處理氣體係為了防止上表面也被粗糙化,噴射沖洗用氣體(在該專利文獻中為置換氣體)。   [0008] 沖洗用氣體係朝玻璃基板的搬運方向之下游側噴射,在形成於進入到玻璃基板中的處理空間之部位與上部構成體之間的間隙,形成沿著搬運方向之氣流。又,藉由在間隙流動的沖洗用氣體之壓力,迴避處理氣體從玻璃基板的前頭部側進入到間隙,藉此阻止上表面的粗糙化。 [先前技術文獻] [專利文獻]   [0009]   [專利文獻1]日本特開2012-191001號公報[0002] As conventionally, glass substrates are used in various electronic devices, including flat panel displays such as liquid crystal displays, plasma displays, organic EL displays, field emission displays, smart phones, tablet computers, etc. .  [0003] In the manufacturing process of this glass substrate, there will be problems caused by static electricity. For example, when it is placed on a support table for performing a predetermined treatment on a glass substrate, the glass substrate may stick to the support table due to static electricity. In such a case, when the processed glass substrate is lifted from the support table, the glass substrate may be damaged. [0004] Therefore, as a countermeasure to solve this problem, before performing a predetermined treatment, the surface of the glass substrate is etched with a processing gas such as hydrogen fluoride to roughen the surface, thereby avoiding the problem caused by static electricity. The method of generation is well known. In addition, Patent Document 1 discloses an example of a method for performing an etching treatment on the surface of a glass substrate. [0005] In the method disclosed in the patent document, while the glass substrate is transported in a flat posture, processing gas supplied by a processor (surface treatment device in the patent document) disposed on the transport path (Reactive gas in this patent document) Only the lower surface of the upper and lower surfaces of the glass substrate is subjected to etching treatment. [0006] The processor used in this method is provided with an upper structure (the top plate in the patent document) and a lower structure (the upper plate in the patent document) opposed to each other via a conveyance path of the glass substrate. Bottom structure), a processing space (a reaction chamber in the patent document) for performing an etching process is formed between the two structures. The lower structure system is equipped with: a gas supply port for supplying processing gas to the processing space; and an exhaust port for discharging processing gas from the processing space. [0007] In this method, while supplying processing gas from the gas supply port to the processing space, and exhausting the processing gas from the processing space through the exhaust port, etching is performed on the lower surface of the glass substrate that passes through the processing space along with the conveyance. Treatment, thereby roughening the lower surface. Furthermore, in this method, a process gas system for roughening only the lower surface of the glass substrate sprays a flushing gas (replacement gas in this patent document) in order to prevent the upper surface from being roughened.  [0008] The flushing gas system is sprayed toward the downstream side of the conveying direction of the glass substrate to form an airflow along the conveying direction in the gap formed between the processing space entering the glass substrate and the upper structure. In addition, the pressure of the flushing gas flowing through the gap prevents the process gas from entering the gap from the front head side of the glass substrate, thereby preventing the roughening of the upper surface. [Prior Art Document] [Patent Document]   [0009]    [Patent Document 1] JP 2012-191001 A

[發明所欲解決之課題]   [0010] 但,採用前述方法之情況,會產生必須解決之以下的問題。   [0011] 亦即,在前述方法,即使在玻璃基板的最後部分進入到處理空間後,亦會噴射沖洗用氣體。因此會有被沖洗用氣體的壓力加劇之處理氣體從進入到處理空間的最後部分之後方側流入到前述間隙,造成使最後部分的上表面不當地粗糙化,產生使玻璃基板的品質降低之問題。   [0012] 有鑑於前述事情之本發明,其課題係當一邊將玻璃基板以平放姿勢搬運,一邊藉由處理氣體,對玻璃基板的下表面實施蝕刻處理時,防止玻璃基板的品質降低。 [用以解決課題之手段]   [0013] 為了解決前述課題而開發完成之本發明,一種玻璃基板之製造方法,係當一邊將玻璃基板以平放姿勢朝搬運方向搬運,使其通過形成於對向配置的上部構成體與下部構成體之相互間的處理空間,一邊藉由從設在下部構成體的供氣口朝處理空間供給的處理氣體,對玻璃基板的下表面實施蝕刻處理時,朝搬運方向的下游側噴射第一沖洗用氣體,使得在形成於玻璃基板中之進入到處理空間的部位與上部構成體之間的間隙,形成沿著搬運方向之第一沖洗用氣體的氣流之玻璃基板之製造方法,其特徵為:在玻璃基板的最後部分進入到處理空間之前,停止進行第一沖洗用氣體的噴射。   [0014] 在此方法,在玻璃基板的最後部分進入到處理空間之前,停止噴射第一沖洗用氣體。藉此,在最後部分進入到處理空間之後,可必然地防止第一沖洗用氣體所加劇的處理氣體從最後部分的後方側流入到間隙(形成於玻璃基板中之進入到處理空間的部位與上部構成體之間的間隙,以下的說明中稱為上側間隙)的事態產生。其結果,最後部分的上表面被不當地粗糙化之情況消失,能夠防止玻璃基板的品質降低。   [0015] 在前述方法,在玻璃基板的前頭部分進入到處理空間之前,開始噴射第一沖洗用氣體。   [0016] 藉此,在玻璃基板的前頭部分剛進入到處理空間後的時間點,能夠作成為已經在上側間隙形成有第一沖洗用氣體的氣流之狀態。藉此,能夠確實地防止前頭部分的上表面被不當地粗糙化之事態產生。因此,在防止玻璃基板的品質降低上更有利。   [0017] 在前述方法,當對沿著搬運方向之長度較處理空間長之玻璃基板的下表面,實施蝕刻處理時,在玻璃基板的前頭部分從處理空間脫離後,停止噴射第一沖洗用氣體為佳。   [0018] 關於沿著搬運方向之長度,在比起處理空間,玻璃基板較長之情況,在玻璃基板的前頭部分從處理空間脫離的時間點(以下稱為前頭部分脫離時間點),處理空間係處於其全長被玻璃基板切斷成上下之狀態。又,在被切斷的處理空間中之上側,亦即,在上側間隙,形成有第一沖洗用氣體的氣流,因此,在上側間隙形成為不存在有處理氣體之狀態。除此以外,從被切斷的處理空間中之下側朝上側(上側間隙),處理氣體極不易迂迴進入。因此,在前頭部分脫離時間點之後,即使不噴射第一沖洗用氣體,也能夠迴避上表面的粗糙化,所以,若停止進行噴射的話,該部分能夠抑制玻璃基板的製造成本。   [0019] 在前述方法,從玻璃基板的最後部分進入到處理空間的時間點到脫離的時間點之間,朝搬運方向的上游側噴射第二沖洗用氣體,使得在上側間隙形成沿著與搬運方向相反方向之第二沖洗用氣體的氣流為佳。   [0020] 藉此,在玻璃基板的最後部分進入到處理空間後直到脫離為止之間,藉由形成於上側間隙的第二沖洗用氣體之氣流,能夠確實地防止處理氣體從最後部分的後方側流入到上側間隙之這樣的事態發生。其結果,能夠更理想地防止玻璃基板的品質降低。   [0021] 在前述方法,使用清淨乾燥氣體作為第一及第二沖洗用氣體為佳。   [0022] 藉此,因使用廉價的清淨乾燥氣體作為第一及第二沖洗用氣體,所以,能夠抑制伴隨進行第一及第二沖洗用氣體的噴射之成本。其結果,能夠抑制玻璃基板的製造成本。又,藉由使用清淨乾燥氣體,能夠確實地迴避因第一及第二沖洗用氣體的噴射造成玻璃基板受汙染之事態。 [發明效果]   [0023] 若依據本發明,當一邊將玻璃基板以平放姿勢搬運,邊藉由處理氣體,對玻璃基板的下表面實施蝕刻處理時,能夠防止玻璃基板的品質降低。[Problem to be solved by the invention]   [0010] However, the use of the aforementioned method will cause the following problems that must be solved.  [0011] That is, in the aforementioned method, even after the last part of the glass substrate enters the processing space, the flushing gas is sprayed. Therefore, the pressure of the flushing gas is increased, and the processing gas flows from the rear side of the last part of the processing space into the aforementioned gap, causing the upper surface of the last part to be roughened unduly, resulting in the problem of lowering the quality of the glass substrate. .  [0012] In view of the foregoing, the subject of the present invention is to prevent the quality of the glass substrate from degrading when the lower surface of the glass substrate is etched with a processing gas while the glass substrate is transported in a flat posture. [Means for Solving the Problem]   [0013] The present invention, developed to solve the aforementioned problems, is a method of manufacturing a glass substrate, when the glass substrate is transported in a flat position in the transport direction while passing it through the surface of the glass substrate. In the processing space between the upper structure and the lower structure, the lower surface of the glass substrate is etched by the processing gas supplied from the air supply port provided in the lower structure to the processing space. The first flushing gas is sprayed on the downstream side of the conveying direction, so that the gap between the part of the glass substrate that enters the processing space and the upper structure forms the glass of the flow of the first flushing gas along the conveying direction The method for manufacturing the substrate is characterized in that the spraying of the first flushing gas is stopped before the last part of the glass substrate enters the processing space.  [0014] In this method, before the last part of the glass substrate enters the processing space, the spraying of the first flushing gas is stopped. Thereby, after the last part enters the processing space, the processing gas aggravated by the first flushing gas can certainly be prevented from flowing into the gap from the rear side of the last part (the part formed in the glass substrate that enters the processing space and the upper part The gap between the constituent bodies is referred to as the upper gap in the following description). As a result, the improperly roughened upper surface of the last part disappears, and it is possible to prevent the quality of the glass substrate from deteriorating.  [0015] In the aforementioned method, before the front part of the glass substrate enters the processing space, the first flushing gas is started to be sprayed.  [0016] Thereby, at the time immediately after the front portion of the glass substrate enters the processing space, it can be made into a state where the flow of the first flushing gas has been formed in the upper gap. Thereby, it is possible to reliably prevent the situation in which the upper surface of the front portion is unduly roughened. Therefore, it is more advantageous in preventing the deterioration of the quality of the glass substrate. [0017] In the aforementioned method, when the lower surface of the glass substrate whose length along the conveying direction is longer than the processing space is subjected to etching treatment, after the front part of the glass substrate is separated from the processing space, the spraying of the first flushing gas is stopped Better. [0018] Regarding the length along the conveying direction, when the glass substrate is longer than the processing space, the processing space is at the point in time when the leading part of the glass substrate is separated from the processing space (hereinafter referred to as the leading part separation time). It is in a state where its full length is cut up and down by the glass substrate. In addition, on the upper side of the cut processing space, that is, in the upper gap, a flow of the first flushing gas is formed. Therefore, the upper gap is formed in a state where there is no processing gas. In addition, from the lower side to the upper side (upper gap) in the cut processing space, the processing gas is extremely difficult to bypass and enter. Therefore, it is possible to avoid the roughening of the upper surface even if the first flushing gas is not sprayed after the tip part is separated from the time point. Therefore, if spraying is stopped, the manufacturing cost of the glass substrate can be suppressed in this part. [0019] In the foregoing method, from the time point when the last part of the glass substrate enters the processing space to the time point when it leaves the processing space, the second flushing gas is sprayed toward the upstream side of the conveying direction, so that the upper gap is formed along and conveyed. The flow of the second flushing gas in the opposite direction is better. [0020] With this, after the last part of the glass substrate enters the processing space until it is released, the flow of the second flushing gas formed in the upper gap can reliably prevent the processing gas from flowing from the rear side of the last part. The situation of flowing into the upper gap occurred. As a result, it is possible to more ideally prevent the deterioration of the quality of the glass substrate.  [0021] In the aforementioned method, it is better to use clean and dry gas as the first and second flushing gas.  [0022] With this, since cheap clean dry gas is used as the first and second flushing gases, it is possible to suppress the cost associated with the injection of the first and second flushing gases. As a result, the manufacturing cost of the glass substrate can be suppressed. In addition, by using a clean dry gas, it is possible to reliably avoid a situation in which the glass substrate is contaminated by the injection of the first and second flushing gases. [Effects of the Invention]   [0023] According to the present invention, when the lower surface of the glass substrate is etched with a processing gas while the glass substrate is transported in a flat position, it is possible to prevent the quality of the glass substrate from deteriorating.

[0025] 以下,參照圖面說明關於本發明的實施形態之玻璃基板之製造方法。首先,說明關於使用於玻璃基板之製造方法的玻璃基板的製造裝置。   [0026] 在此,在以下的說明中,將玻璃基板的搬運方向(在圖1中,從右朝左之方向)稱為[搬運方向]。又,將與搬運方向正交的玻璃基板之寬度方向(在圖1中,對紙面呈垂直的方向)稱為[寬度方向],並且將沿著[寬度方向]之長度稱為[全寬度]、[寬度尺寸]。並且,將對玻璃基板的上下表面垂直的方向稱為[上下方向]。   [0027] 如圖1所示,玻璃基板的製造裝置1之主要構成要素係具備有:用將玻璃基板2以平放姿勢予以水平搬運的搬運手段3;藉由處理氣體4(在本實施形態,為氟化氫)用來對搬運中的玻璃基板2的下表面2a進行蝕刻處理之處理器5;分別噴射用來防止對玻璃基板2的上表面2b進行蝕刻處理之第一沖洗用氣體6及第二沖洗用氣體23(參照圖6)的第一沖洗用氣體噴射噴嘴7及第二沖洗用氣體噴射噴嘴24;具有玻璃基板2的搬入口8aa及搬出口8ab,並且用來防止處理氣體4從形成於自身的內部的空間9漏出至外部之室8;在玻璃基板2的搬運路徑上配置於處理器5與搬出口8ab之間的第一虛擬處理器10、配置於處理器5與搬入口8aa之間的第二虛擬處理器11;及吸引在處理氣體4與玻璃基板2的下表面2a之反應所產生的生成物再排出至室8外的吸引噴嘴12。   [0028] 搬運手段3係以排列於玻璃基板2的搬運路徑上之複數個滾子3a所構成。藉由此複數個滾子3a,可將沿著延伸於直線上的搬運路徑搬運玻璃基板2。在沿著搬運方向相鄰的滾子3a相互間,形成為玻璃基板2的下表面2a之全寬度露出的狀態。藉由此露出的下表面2a與處理氣體4產生反應,實施蝕刻處理而將下表面2a的全寬度粗糙化。再者,作為搬運手段3,可使用複數個滾子3a以外的裝置,若為可在搬運中使玻璃基板2的下表面2a的全寬度露出的話,則可使用其他裝置。   [0029] 處理器5係具備有:在上下隔著玻璃基板2的搬運路徑而相對向之作為下部構成體的本體部5a;作為上部構成體的頂板部5b;用來防止因頂板部5b的自重所引起的撓曲之作為補強構件的H鋼5c。又,在本體部5a與頂板部5b之相互間,形成有對通過此部位的玻璃基板2實施蝕刻處理用之處理空間13。此處理空間13係形成為扁平的空間。處理空間13的寬度尺寸W1(參照圖2)、及沿著上下方向之厚度尺寸T1,分別形成為較玻璃基板2之全寬度W2(參照圖2)、及玻璃基板2的厚度T2大。   [0030] 在此,當玻璃基板2從處理空間13的外部進入到內部時,為了防止伴隨此動作,存在於玻璃基板2的周圍之空氣等的氣體流入到處理空間13,將沿著搬運方向的處理空間13之長度尺寸L1,理想為設定成300mm~2000mm的範圍內,更理想為設定成600mm~1000mm的範圍內。再者,從使第一沖洗用氣體6理想地噴射的觀點來看,前述長度尺寸L1係與本實施形態的態樣不同,較沿著玻璃基板2的搬運方向之長度更長為佳。又,處理空間13的厚度尺寸T1係設成為4mm~30mm的範圍內為佳。且,前述長度尺寸L1與厚度尺寸T1之比率(長度尺寸L1/厚度尺寸T1)的值係設成為10~250的範圍內為佳。   [0031] 本體部5a係具有長方體狀的外形。此本體部5a係具備有:對處理空間13噴射供給處理氣體4之供氣口14;從處理空間13吸引排出處理氣體4用之排氣口15;及將供給至處理空間13的處理氣體4進行加熱、及用來防止因處理氣體4所產生之凝結用的加熱器等的加熱手段(未圖示)。排氣口15係分別配置於本體部5a之搬運方向的上游側端部與下游側端部。相對於此,供氣口14係在上游側端部的排氣口15與下游側端部的排氣口15之間,沿著搬運方向配置有複數個(本實施形態為三個)。   [0032] 複數個供氣口14中之搬運方向的最下游側的供氣口14,供給至處理空間13的處理氣體4之流量最多,在本實施形態,比起其他的供氣口14,供給有兩倍流量之處理氣體4。另外,在複數個供氣口14之相互間,所供給之處理氣體4的濃度形成為相同。各供氣口14係在沿著搬運方向相鄰的滾子3a之相互間,與處理空間13連接。且,各供氣口14所供給的處理氣體4的流量,分別在每單位時間形成為一定。在此,關於沿著搬運方向之距離,從最上游側的供氣口14到中央的供氣口14之距離L2與從中央的供氣口14到最下游側的供氣口14之距離L3形成為相等。再者,在本實施形態,配置有三個供氣口14,但不限於此,可配置兩個,亦可配置四個以上。   [0033] 上游側端部的排氣口15及下游側端部的排氣口15,分別可使從處理空間13所吸引的處理氣體4送入到形成於本體部5a的內部之空間16。空間16係與排氣管17相連,該排氣管是與配置在室8的外部之洗淨集塵裝置(未圖示)相連接。藉此,透過排氣口15從處理空間13送入到空間16之處理氣體4係之後,透過排氣管17,從空間16排氣至洗淨集塵裝置。再者,排氣管17係連接於空間16之搬運方向的下游側端部。在上游側端部的排氣口15及下游側端部的排氣口15,亦可設置個別地調節進行排氣之氣體(氣體不僅是處理氣體4,亦包含有自處理空間13的外部吸入到內部後,被排氣口15所吸引的空氣等)的流量之機構。另外,亦可藉由將排氣口15之與處理空間13接觸的開口部堵住,或將構成排氣口15的部位從本體部5a取下並將與空間16連通的孔堵住,省略排氣口15。   [0034] 在此,比起各供氣口14供給至處理空間13的處理氣體4之流量,各排氣口15自處理空間13所排出之氣體的流量較多。再者,各排氣口15所排出的氣體的流量,在每單位時間形成為一定。又,關於沿著搬運方向之距離,比起上游側端部的排氣口15與最上游側的供氣口14之相互間距離D1,下游側端部的排氣口15與最下游側的供氣口14之相互間距離D2變得較長。相互間距離D2之長度,理想為相互間距離D1之長度的1.2倍以上,更理想為1.5倍以上,最理想為2倍以上。   [0035] 如圖2所示,供氣口14及排氣口15雙方係形成為對寬度方向呈長條狀之狹縫狀。供氣口14的寬度尺寸係如同圖所示,較玻璃基板2的全寬度稍短,亦可與同圖不同,較玻璃基板2的全寬度稍長。另外,排氣口15的寬度尺寸係較玻璃基板2的全寬度稍長。在此,為了容易沿著寬度方向均等地供給處理氣體4,供氣口14之沿著搬運方向的開口長度S1係設成0.5mm~5mm的範圍內為佳。再者,排氣口15之沿著搬運方向的開口長度係較供氣口14之沿著搬運方向的開口長度S1長。且,為了迴避藉由排氣口15之氣體的吸引形成為執行圓滑的蝕刻處理之阻礙,將從本體部5a的上游側端緣5aa到上游側端部的排氣口15之距離L4和從下游側端緣5ab到下游側端部的排氣口15之距離L4共同設成為1mm~20mm的範圍內為佳。   [0036] 如圖1所示,本體部5a中之與通過處理空間13中之玻璃基板2的下表面2a相對向的頂部係為沿著搬運方向無間隙地排列的複數個單元(在本實施形態為八個,包含後述的供氣單元18與連接單元19)。該等複數個單元係構成本體部5a的頂部,並且構成前述空間16的頂板部。   [0037] 在複數個單元中,包含有形成有供氣口14的供氣單元18和未形成有供氣口14的連接單元19(在圖2中,分別以粗線包圍供氣單元18與連接單元19)。在本實施形態,複數個單元的排列中,供氣單元18係排列於從搬運方向的上游側算起第二、第四、第六號的位置。另外,連接單元19係排列於從搬運方向的上游側算起第一、第三、第五、第七、第八號的位置。供氣單元18係具備有與供氣口14連結之供氣噴嘴18a,此供氣噴嘴18a係與配置在室8外的處理氣體4之發生器(未圖示)相連接。連接單元19係將相鄰的供氣單元18之相互間、及供氣單元18與排氣口15之間連接。   [0038] 在此,存在於從搬運方向的上游側算起的第一號位置(最上游側的位置)之連接單元19(19x)係固定配置於該位置。另外,存在於從上游側算起的第三、第五、第七、第八號位置的連接單元19係可置換成供氣單元18,或置換成取代供氣口14而形成有排氣口20a之後述的排氣單元20(在圖1中,未使用排氣單元20)。又,關於存在於從上游側算起的第二、第四、第六號位置的供氣單元18,亦可置換成連接單元19,或後述的排氣單元20。藉此,能夠變更供氣口14的數量、搬運方向上之供氣口14的位置等。且,就算配置有排氣單元20之情況,從上游側端部及下游側端部的兩排氣口15、15以外,亦可進行處理氣體4的排氣。以下,關於該等單元的置換,參照圖3a至圖3d進行說明。   [0039] 在圖3a至圖3c,以粗線所包圍顯示的供氣單元18、連接單元19及排氣單元20,沿著搬運方向之長度相互相同。藉此,在進行該等單元的置換之情況,伴隨置換而新配置的單元係可與和其相鄰的兩個單元(在圖3a~圖3c,分別圖示相鄰接的兩個單元均為連接單元19之情況)無間隙地排列。且,新配置的單元係可在上下方向上與相鄰的兩單元無階差地排列。   [0040] 在此,如圖3a所示,供氣單元18之供氣口14的周邊區域14a係比起其他區域,在上下方向上位於高位。藉此,在供氣口14的周邊區域14a,比起其他區域,與通過處理空間13中之玻璃基板2的下表面2a之分離距離變短。在本實施形態,在供氣口14的周邊區域14a之與玻璃基板2的下表面2a之分離距離,係與其他區域之與玻璃基板2的下表面2a之分離距離相比,成為一半的距離。又,分離距離變短之部分,形成為供氣口14的前端(處理氣體4的流出口)接近玻璃基板2的下表面2a之狀態。又,如圖3c所示,假設配置有排氣單元20之情況,形成於該排氣單元20之排氣口20a形成為與前述空間16相連的狀態。藉此,透過排氣口20a從處理空間13送入到空間16之處理氣體4係之後,透過排氣管17,從空間16排氣至洗淨集塵裝置。再者,供氣口20a係與上游側端部的排氣口15及下游側端部的排氣口15同樣地,形成為對寬度方向呈長條狀之狹縫狀。在此,如圖3d所示,供氣單元18之供氣口14的周邊區域14a,亦可作成為與其他區域相同高度。   [0041] 如圖1所示,頂板部5b係單一的板體(在平面視角上呈矩形狀的板體)所構成,具有與通過處理空間13中的玻璃基板2之上表面2b相對向之平坦面。又,頂板部5b係內置有用來防止藉由處理氣體4之凝結的加熱器等之加熱手段(未圖示)。H鋼5c係以在頂板部5b上朝寬度方向延伸的方式設置。且,H鋼5c係設有複數個(本實施形態為三個),該等複數個H鋼5c係在搬運方向上配置成等間隔。   [0042] 第一沖洗用氣體噴射噴嘴7係在搬運方向上配置於較處理器5更上游側且較玻璃基板2的搬運路徑更上方。此第一沖洗用氣體噴射噴嘴7係可朝搬運方向的下游側噴射第一沖洗用氣體6,使得在形成於玻璃基板2之進入到處理空間13的部位與頂板部5b之間的間隙13a,形成沿著搬運方向之第一沖洗用氣體6的氣流。第一沖洗用氣體6的氣流係可形成於間隙13a的全寬度範圍。且,第一沖洗用氣體6係以比起藉由搬運手段3之玻璃基板2的搬運速度,沿著搬運方向之流速變快的方式進行噴射。藉此,當玻璃基板2的前頭部分2f在處理空間13內被搬運時,將欲從前頭部分2f側流入到間隙13a之處理氣體4以第一沖洗用氣體6的壓力趕至搬運方向的下游側,可阻止流入到間隙13a。又,可迴避玻璃基板2的上表面2b之粗糙化。再者,在本實施形態,使用清淨乾燥氣體(CDA)作為第一沖洗用氣體6。   [0043] 如圖4a所示,第一沖洗用氣體6係在搬運中的玻璃基板2的前頭部分2f將要進入到處理空間13之前,開始噴射。且,如圖4b所示,第一沖洗用氣體6係在搬運中的玻璃基板2的最後部分2e將要進入到處理空間13之前,停止噴射。在此,在本實施形態,進行第一沖洗用氣體6的噴射開始、停止之時間點是以下述的方式決定。首先,在搬運方向上較第一沖洗用氣體噴射噴嘴7更上游側,配置可檢測玻璃基板2的前頭部分2f及最後部分2e通過之感應器等的檢測手段(未圖示)。若此檢測手段檢測到玻璃基板2的前頭部分2f通過的話,則依據玻璃基板2的搬運速度與沿著從前頭部分2f到處理空間13為止之搬運路徑的距離,決定開始進行第一沖洗用氣體6的噴射之時間點。同樣地,若檢測手段檢測到最後部分2e通過的話,則依據搬運速度與從最後部分2e到處理空間13為止之距離,決定噴射停止之時間點。   [0044] 如圖5所示,第一沖洗用氣體噴射噴嘴7係具備有:朝寬度方向延伸之圓筒狀的管路7a。對此管路7a,於寬度方向隔著間隔插入複數個管7b。可從各管7b朝管路7a內供給第一沖洗用氣體6。又,在管路7a的內部,安裝有朝寬度方向呈長條狀之板體7c,從各管7b流入到管路7a內之第一沖洗用氣體6係以迂迴板體7c的方式環繞後,從與管路7a連結的噴射部7d噴射。形成於噴射部7d的第一沖洗用氣體6之噴射口係形成為朝寬度方向呈長條狀之狹縫狀。藉由噴射部7d之第一沖洗用氣體6的噴射角度θ(對玻璃基板2的上表面2b,噴射部7d所指向之方向傾斜後的角度)係在25°~70°的範圍內可進行變更。又,第一沖洗用氣體噴射噴嘴7的姿勢係如圖5的實線所示,調節成使噴射部7d指向處理空間13內,亦可如同圖的兩點鏈線所示,調節成使噴射部7d指向處理空間13外。   [0045] 如圖6所示,第二沖洗用氣體噴射噴嘴24係在搬運方向上配置於較處理器5更下游側且較玻璃基板2的搬運路徑更上方。此第二沖洗用氣體噴射噴嘴24係可朝搬運方向的上游側噴射第二沖洗用氣體23,使得在間隙13a,形成沿著與搬運方向相反方向之第二沖洗用氣體23的氣流。第二沖洗用氣體23的氣流係可形成於間隙13a的全寬度範圍。藉由此第二沖洗用氣體23,使得當玻璃基板2的最後部分2e在處理空間13內被搬運時,將欲從最後部分2e側流入到間隙13a之處理氣體4以第二沖洗用氣體23的壓力趕至搬運方向的上游側,可阻止流入到間隙13a。又,可迴避玻璃基板2的上表面2b之粗糙化。再者,在本實施形態,與第一沖洗用氣體6同樣地,使用清淨乾燥氣體作為第二沖洗用氣體23。   [0046] 且,第二沖洗用氣體23係在第一沖洗用氣體6停止噴射後,在搬運中的玻璃基板2的最後部分2e將要進入到處理空間13之前,開始進行噴射。且,如圖7所示,第二沖洗用氣體23係在搬運中的玻璃基板2的最後部分2e從處理空間13剛脫離後,停止噴射。在此,進行第二沖洗用氣體23的噴射開始、停止之時間點,係可藉由利用前述檢測手段、在搬運方向上配置於較第二沖洗用氣體噴射噴嘴24更下游側的感測器等的新檢測手段(未圖示)等,檢測玻璃基板2的最後部分2e通過來決定即可。   [0047] 第二沖洗用氣體噴射噴嘴24,係與前述第一沖洗用氣體噴射噴嘴7,僅在配置、姿勢等不同,可採用具有與第一沖洗用氣體噴射噴嘴7相同構造之噴嘴。因此,關於第二沖洗用氣體噴射噴嘴24之構造,在此省略重複之說明。   [0048] 如圖1所示,室8係具有長方體狀的外形。此室8係具備有:除了形成有前述搬入口8aa及搬出口8ab以外,還形成有頂板孔8ac的本體8a;及用來封住頂板孔8ac之蓋體8b。   [0049] 搬入口8aa及搬出口8ab係形成於本體8a的側壁部8ad,並且形成作為沿著寬度方向呈長條狀之扁平的開口。頂板孔8ac係在本體8a的頂板部8ae形成有複數個(在本實施形態為三個)。蓋體8b係可封住頂板孔8ac的開口全體,並且可安裝至本體8a、可從本體8a取下。藉此,藉由將蓋體8b從本體8a取下而使頂板孔8ac開放,可經由該頂板孔8ac進行處理器5的調節、保養、檢驗等的作業。   [0050] 第一虛擬處理器10係具備有:配置於玻璃基板2的搬運路徑的下方之長方體狀的箱體10a;以與箱體10a相對向的方式配置於搬運路徑的上方之頂板10b;及用來防止藉由頂板10b的自重之撓曲之作為補強構件的H鋼10c。又,在箱體10a與頂板10b之相互間,形成有使玻璃基板2通過之間隙21。第一虛擬處理器10係作為用來迴避從搬出口8ab流入到室8內之氣流到達處理空間13造成對蝕刻處理產生壞影響之防風構件來發揮功能。在此,為了使其有效地作為防風構件發揮功能,沿著搬運方向之第一虛擬處理器10的長度,理想為設成50mm以上,更理想為設成100mm以上。   [0051] 在箱體10a的上端,形成有朝寬度方向呈長條狀之矩形狀的開口10aa。另外,在箱體10a的底部,連接有與配置在室8外的洗淨集塵裝置(未圖示)相連接之排氣管22。藉此,第一虛擬處理器10係針對被玻璃基板2的下表面2a吸引而從處理空間13內朝搬運方向的下游側流出之處理氣體4,可使該處理氣體4透過開口10aa以排氣管22加以吸引後,排出至洗淨集塵裝置。頂板10b係單一的板體(在平面視角上呈矩形狀的板體)所構成,具有與通過間隙21中的玻璃基板2之上表面2b相對向之平坦面。H鋼10c係以在頂板10b上朝寬度方向延伸的方式設置。   [0052] 第一虛擬處理器10係在從沿著搬運方向之方向觀看的情況,具有與處理器5相同的外形,並且配置成看起來與處理器5重疊。亦即,在處理器5的本體部5a與第一虛擬處理器10的箱體10a之相互間,寬度尺寸、及沿著上下方向之尺寸設成為相同。同樣地,(A)在處理器5的頂板部5b與第一虛擬處理器10的頂板10b、(B)處理器5的H鋼5c與第一虛擬處理器10的H鋼10c、(C)處理器5的處理空間13與第一虛擬處理器10的間隙21、該等(A)~(C)之各組合之相互間,寬度尺寸、及沿著上下方向之尺寸亦設成為相同。   [0053] 第二虛擬處理器11係除了下述所示的(1)、(2)的兩點以外,其餘具備有與前述第一虛擬處理器10相同的結構。因此,在圖1中,將附加於第一虛擬處理器10相同之圖號,亦附加於第二虛擬處理器11,在兩處理器10、11之間省略重複之說明。(1)配置是與第一虛擬處理器10不同的這一點。(2)作為用來迴避並非從搬出口8ab而是從搬入口8aa流入到室8內之氣流到達處理空間13造成對蝕刻處理產生壞影響之防風構件來發揮功能的這一點。再者,第二虛擬處理器11係與第一虛擬處理器10同樣地,在從沿著搬運方向之方向觀看的情況,具有與處理器5相同的外形,並且配置成看起來與處理器5重疊。   [0054] 吸引噴嘴12係安裝於室8的頂板部8ae,其吸引口12a與空間9相連通。此吸引口12a係在搬運方向上配置於較第一虛擬處理器10更下游側,配置於空間9之搬運方向的下游側端部。吸引噴嘴12係與在室8外之洗淨集塵裝置(未圖示)相連接,可將所吸引的生成物排出至洗淨集塵裝置。再者,吸引口12a不限於與本實施形態相同的配置,配置於較玻璃基板2的搬運路徑更上方即可。但,由於具有吸引在蝕刻處理所產生的生成物後排出至室8外之功能,故,即使在吸引口12a設成為與本實施形態不同之配置的情況,在搬運方向上仍是配置於較處理器5更下游側為佳。   [0055] 以下,說明關於使用了前述玻璃基板的製造裝置1之本發明的實施形態之玻璃基板之製造方法。   [0056] 首先,藉由以搬運手段3搬運玻璃基板2,將玻璃基板2從搬入口8aa搬入到室8內。再者,在本實施形態,以沿著從搬入口8aa到搬出口8ab為止之搬運路徑的距離為基準,將沿著搬運路徑之全長較該距離長的玻璃基板2作為蝕刻處理之對象。又,在本實施形態,以一定的搬運速度搬運玻璃基板2。   [0057] 接著,讓搬入後之玻璃基板2通過配置於搬入口8aa與處理器5之間的第二虛擬處理器11之間隙21。再者,從搬入口8aa流入到室8內並沿著玻璃基板2的下表面2a朝搬運方向之下游側流動的氣體,係以連結於第二虛擬處理器11的箱體10a之底部的排氣管22加以吸引。除此以外,藉由使第二虛擬處理器11作為防風構件來發揮功能,能夠防止從搬入口8aa流入到室8內之氣體到達處理器5的處理空間13。   [0058] 接著,讓通過第二虛擬處理器11之間隙21後的玻璃基板2通過處理器5的處理空間13。此時,從玻璃基板2的前頭部分2f將要進入到處理空間13之前,開始噴射第一沖洗用氣體6。又,在通過處理空間13中之玻璃基板2的下表面2a側,一邊藉由各供氣口14所供給的處理氣體4,對下表面2a進行蝕刻處理,一邊藉由上游側端部及下游側端部的各自的排氣口15,從處理空間13排出處理氣體4。另外,在通過處理空間13中之玻璃基板2的上表面2b側,藉由形成於間隙13a的第一沖洗用氣體6之氣流,防止欲從玻璃基板2的前頭部分2f側流入到間隙13a之處理氣體4對上表面2b進行蝕刻處理。又,在蝕刻處理所產生的生成物被吸引噴嘴12吸引且排出至室8外。第一沖洗用氣體6在玻璃基板2的最後部分2e將要進入到處理空間13之前,停止噴射。   [0059] 在此,在本實施形態,形成為在玻璃基板2的最後部分2e將要進入到處理空間13之前,使第一沖洗用氣體6停止噴射的態樣,但不限於此。若玻璃基板2的前頭部分2f從處理空間13脫離之後的話,可為在較玻璃基板2的最後部分2e將要進入到處理空間13前更早之前停止第一沖洗用氣體6的噴射之態樣,亦可為玻璃基板2的前頭部分2f剛從處理空間13脫離後停止噴射第一沖洗用氣體6之態樣。   [0060] 若使第一沖洗用氣體6停止噴射的話,則取代第一沖洗用氣體6,開始進行第二沖洗用氣體23的噴射。伴隨此,在通過處理空間13中之玻璃基板2的上表面2b側,藉由形成於間隙13a的第二沖洗用氣體23之氣流,防止欲從玻璃基板2的最後部分2e側流入到間隙13a之處理氣體4對上表面2b進行蝕刻處理。另外,在通過處理空間13中之玻璃基板2的下表面2a側,接著一邊藉由各供氣口14所供給的處理氣體4,對下表面2a進行蝕刻處理,一邊藉由上游側端部及下游側端部的各自的排氣口15,從處理空間13排出處理氣體4。第二沖洗用氣體23在玻璃基板2的最後部分2e剛從處理空間13脫離後,停止噴射。   [0061] 在此,在本實施形態,第二沖洗用氣體23係形成為在玻璃基板2的最後部分2e將要進入到處理空間13之前,開始進行噴射,並且在剛脫離後停止噴射的態樣,但不限於此。第二沖洗用氣體23係至少在玻璃基板2的最後部分2e進入到處理空間13的時間點到脫離的時間點之間進行噴射即可。   [0062] 又,在本實施形態,在剛停止第一沖洗用氣體6的噴射後,開始進行第二沖洗用氣體23的噴射,但不限於此。亦可為在停止第一沖洗用氣體6的噴射後,經過預定時間後再開始進行第二沖洗用氣體23的噴射。藉此,能夠防止第一沖洗用氣體6與第二沖洗用氣體23在處理空間13內碰撞而造成氣流在處理空間13內產生紊亂。又,亦可節約第一沖洗用氣體6與第二沖洗用氣體23之使用量。再者,第一沖洗用氣體6與第二沖洗用氣體23亦可達到防止處理氣體4從玻璃基板2的下表面2a側經由搬運方向的側面(沿著玻璃基板2的寬度方向端部)迂迴進入到上表面2b側之效果。因此,從第一沖洗用氣體6的停止噴射到第二沖洗用氣體23的開始噴射之預定時間,從既要防止氣體彼此在處理空間13內碰撞,又要防止前述迂迴進入的觀點來看,盡可能地短為佳,理想為0.5秒~2秒,更理想為0.5秒~1秒。另外,從節約第一沖洗用氣體6及第二沖洗用氣體23之使用量的觀點來看,前述預定時間係盡可能地長為佳,確保預定時間,使得玻璃基板2的前頭部分2f剛從處理空間13脫離後停止第一沖洗用氣體6的噴射,玻璃基板2的最後部分2e將要進入到處理空間13之前開始進行第二沖洗用氣體23的噴射。   [0063] 又,在本實施形態,形成為在玻璃基板2的最後部分2e將要進入到處理空間13之前,使第一沖洗用氣體6停止噴射的態樣,且第一沖洗用氣體6的噴射時間較第二沖洗用氣體23的噴射時間長之態樣,但不限於此。亦可藉由在玻璃基板2的前頭部分2f剛自處理空間13脫離後停止第一沖洗用氣體6的噴射,然後立即開始進行第二沖洗用氣體23的噴射,能夠將第二沖洗用氣體23的噴射時間設成較第一沖洗用氣體6的噴射時間長。又,藉由適宜地確保前述預定時間,亦可將第一沖洗用氣體6的噴射時間與第二沖洗用氣體23的噴射時間設成相同時間。又,亦可為能確保前述預定時間,將第一沖洗用氣體6的噴射時間設成為較第二沖洗用氣體23的噴射時間長,亦可設成較短。   [0064] 接著,讓通過了處理器5的處理空間13之蝕刻處理後的玻璃基板2通過配置於處理器5與搬出口8ab之間的第一虛擬處理器10之間隙21。再者,從搬出口8ab流入到室8內並沿著玻璃基板2的下表面2a朝搬運方向之上游側流動的氣體,係以連結於第一虛擬處理器10的箱體10a之底部的排氣管22加以吸引。且,藉由使第一虛擬處理器10作為防風構件來發揮功能,能夠防止從搬出口8ab流入到室8內之氣體到達處理器5的處理空間13。又,藉由排氣管22吸引被玻璃基板2的下表面2a吸引而從處理空間13內朝搬運方向的下游側流出之處理氣體4,排出至室8外。   [0065] 最後,將通過第一虛擬處理器10的隙間21後之玻璃基板2從搬出口8ab搬出至室8外。然後,獲得在下表面2a實施了蝕刻處理之玻璃基板2。如以上所示,完成了本發明的實施形態之玻璃基板之製造方法。   [0066] 以下,說明關於本發明的實施形態之玻璃基板之製造方法的主要作用、效果。   [0067] 在此方法,在玻璃基板2的最後部分2e進入到處理空間13之前,停止噴射第一沖洗用氣體6。藉此,在最後部分2e進入到處理空間13之後,可必然地防止被第一沖洗用氣體6所加劇的處理氣體4從最後部分2e的後方側流入到間隙13a的事態產生。其結果,最後部分2e的上表面2b被不當地粗糙化之情況消失,能夠防止玻璃基板2的品質降低。[0025] Hereinafter, a method of manufacturing a glass substrate according to an embodiment of the present invention will be described with reference to the drawings. First, the manufacturing apparatus of the glass substrate used for the manufacturing method of a glass substrate is demonstrated.  [0026] Here, in the following description, the conveying direction of the glass substrate (the direction from the right to the left in FIG. 1) is referred to as the "conveying direction". In addition, the width direction of the glass substrate perpendicular to the conveying direction (in FIG. 1, the direction perpendicular to the paper surface) is called [width direction], and the length along the [width direction] is called [full width] , [Width Size]. In addition, the direction perpendicular to the upper and lower surfaces of the glass substrate is referred to as the "up and down direction". [0027] As shown in FIG. 1, the main components of the glass substrate manufacturing apparatus 1 are provided with: a conveying means 3 for horizontally conveying the glass substrate 2 in a flat position; and a processing gas 4 (in this embodiment , Hydrogen fluoride) is used to etch the lower surface 2a of the glass substrate 2 being transported; the processor 5 is used to etch the first flushing gas 6 and the second to prevent the upper surface 2b of the glass substrate 2 from being etched. The first flushing gas injection nozzle 7 and the second flushing gas injection nozzle 24 of the second flushing gas 23 (refer to FIG. 6); have a carrying inlet 8aa and a carrying outlet 8ab of the glass substrate 2, and are used to prevent the processing gas 4 from being removed from The space 9 formed in its own leaks out to the external chamber 8; the first virtual processor 10 arranged between the processor 5 and the export port 8ab on the conveyance path of the glass substrate 2 is arranged in the processor 5 and the import port The second virtual processor 11 between 8aa; and the product produced by the reaction between the processing gas 4 and the lower surface 2a of the glass substrate 2 is sucked and then discharged to the suction nozzle 12 outside the chamber 8.  [0028] The conveying means 3 is composed of a plurality of rollers 3a arranged on the conveying path of the glass substrate 2. With this plurality of rollers 3a, the glass substrate 2 can be conveyed along a conveying path extending on a straight line. Between the rollers 3a adjacent to each other in the conveying direction, the entire width of the lower surface 2a of the glass substrate 2 is exposed. The lower surface 2a thus exposed reacts with the processing gas 4, and an etching process is performed to roughen the full width of the lower surface 2a. Furthermore, as the conveying means 3, a device other than a plurality of rollers 3a can be used, and if the full width of the lower surface 2a of the glass substrate 2 can be exposed during conveyance, another device can be used. [0029] The processor 5 is provided with: a main body portion 5a as a lower structure that faces the glass substrate 2 through a conveyance path; a top plate portion 5b as an upper structure body; The deflection caused by its own weight is H steel 5c as a reinforcing member. Moreover, between the main body part 5a and the top plate part 5b, the processing space 13 for performing an etching process to the glass substrate 2 which passed this part is formed. The processing space 13 is formed as a flat space. The width dimension W1 (refer to FIG. 2) of the processing space 13 and the thickness dimension T1 along the vertical direction are formed to be larger than the full width W2 (refer to FIG. 2) of the glass substrate 2 and the thickness T2 of the glass substrate 2 respectively. [0030] Here, when the glass substrate 2 enters from the outside to the inside of the processing space 13, in order to prevent this action, gas such as air existing around the glass substrate 2 flows into the processing space 13, and moves along the conveying direction. The length L1 of the processing space 13 is desirably set in the range of 300 mm to 2000 mm, and more desirably set in the range of 600 mm to 1000 mm. In addition, from the viewpoint of ideally injecting the first flushing gas 6, the aforementioned length dimension L1 is different from the aspect of the present embodiment, and is preferably longer than the length along the conveying direction of the glass substrate 2. In addition, the thickness dimension T1 of the processing space 13 is preferably set to be in the range of 4 mm to 30 mm. In addition, the ratio of the aforementioned length dimension L1 to the thickness dimension T1 (length dimension L1/thickness dimension T1) is preferably set to be in the range of 10 to 250.  [0031] The main body part 5a has a rectangular parallelepiped outer shape. The main body 5a is provided with: a gas supply port 14 for spraying and supplying the processing gas 4 to the processing space 13; an exhaust port 15 for sucking and discharging the processing gas 4 from the processing space 13; and processing gas 4 for supplying the processing space 13 Heating means (not shown) such as a heater for heating and preventing condensation of the processing gas 4. The exhaust ports 15 are respectively arranged at the upstream end and the downstream end in the conveying direction of the main body part 5a. In contrast, the air supply port 14 is located between the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end, and plural (three in this embodiment) are arranged along the conveying direction. [0032] Among the plurality of gas supply ports 14, the gas supply port 14 on the most downstream side in the conveying direction has the largest flow rate of the processing gas 4 supplied to the processing space 13. In this embodiment, compared to the other gas supply ports 14, Supply the processing gas 4 with twice the flow rate. In addition, the concentration of the supplied processing gas 4 among the plurality of gas supply ports 14 is formed to be the same. Each air supply port 14 is connected to the processing space 13 between the rollers 3a adjacent to each other along the conveying direction. In addition, the flow rate of the processing gas 4 supplied from each gas supply port 14 is set to be constant per unit time. Here, regarding the distance along the conveying direction, the distance L2 from the most upstream air supply port 14 to the center air supply port 14 and the distance L3 from the center air supply port 14 to the most downstream air supply port 14 Formed to be equal. Furthermore, in this embodiment, three air supply ports 14 are arranged, but it is not limited to this, and two or more than four may be arranged.  [0033] The exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end respectively allow the processing gas 4 sucked from the processing space 13 to be fed into the space 16 formed inside the main body 5a. The space 16 is connected to an exhaust pipe 17 which is connected to a cleaning dust collector (not shown) arranged outside the chamber 8. Thereby, the processing gas 4 system sent from the processing space 13 to the space 16 through the exhaust port 15 passes through the exhaust pipe 17 and is exhausted from the space 16 to the cleaning dust collector. Furthermore, the exhaust pipe 17 is connected to the downstream end of the space 16 in the conveying direction. The exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end can also be provided with individually regulated gas for exhaust (the gas is not only the processing gas 4, but also includes suction from the outside of the processing space 13). After going to the inside, it is a mechanism of the flow rate of the air sucked by the exhaust port 15). In addition, the opening of the exhaust port 15 in contact with the processing space 13 may be blocked, or the part constituting the exhaust port 15 may be removed from the main body portion 5a and the hole communicating with the space 16 may be blocked. Exhaust port 15.  [0034] Here, the flow rate of the gas discharged from the processing space 13 by each exhaust port 15 is larger than the flow rate of the processing gas 4 supplied to the processing space 13 by each gas supply port 14. In addition, the flow rate of the gas discharged from each exhaust port 15 is constant per unit time. Also, with regard to the distance along the conveying direction, compared to the mutual distance D1 between the exhaust port 15 at the upstream end and the air supply port 14 on the most upstream side, the exhaust port 15 at the downstream end and the most downstream distance D1 The distance D2 between the air supply ports 14 becomes longer. The length of the mutual distance D2 is desirably 1.2 times or more the length of the mutual distance D1, more desirably 1.5 times or more, and most desirably 2 times or more.  [0035] As shown in FIG. 2, both the air supply port 14 and the exhaust port 15 are formed in a slit shape elongated in the width direction. The width dimension of the air supply port 14 is as shown in the figure, which is slightly shorter than the full width of the glass substrate 2, and may be different from the same figure, and is slightly longer than the full width of the glass substrate 2. In addition, the width dimension of the exhaust port 15 is slightly longer than the full width of the glass substrate 2. Here, in order to facilitate the uniform supply of the processing gas 4 along the width direction, the opening length S1 of the gas supply port 14 along the conveying direction is preferably set to be in the range of 0.5 mm to 5 mm. Furthermore, the opening length of the exhaust port 15 along the conveying direction is longer than the opening length S1 of the air supply port 14 along the conveying direction. In addition, in order to avoid the obstruction of the smooth etching process formed by the suction of the gas from the exhaust port 15, the distance L4 from the upstream edge 5aa of the main body portion 5a to the exhaust port 15 at the upstream end and from The distance L4 from the downstream end edge 5ab to the exhaust port 15 at the downstream end is preferably set to be in the range of 1 mm to 20 mm. [0036] As shown in FIG. 1, the top portion of the main body 5a opposite to the lower surface 2a of the glass substrate 2 passing through the processing space 13 is a plurality of units arranged without gaps along the conveying direction (in this embodiment There are eight forms, including the air supply unit 18 and the connection unit 19 described later). These plural units constitute the top portion of the main body portion 5a and constitute the ceiling portion of the aforementioned space 16. [0037] Among the plurality of units, the air supply unit 18 formed with the air supply port 14 and the connection unit 19 not formed with the air supply port 14 (in FIG. 2, the air supply unit 18 and the air supply unit 18 are surrounded by thick lines). Connection unit 19). In this embodiment, in the arrangement of a plurality of units, the air supply unit 18 is arranged at the second, fourth, and sixth positions from the upstream side in the conveying direction. In addition, the connecting unit 19 is arranged at the first, third, fifth, seventh, and eighth positions from the upstream side in the conveying direction. The air supply unit 18 is provided with an air supply nozzle 18 a connected to the air supply port 14, and the air supply nozzle 18 a is connected to a generator (not shown) of the processing gas 4 arranged outside the chamber 8. The connecting unit 19 connects the adjacent air supply units 18 and between the air supply unit 18 and the exhaust port 15.  [0038] Here, the connection unit 19 (19x) existing at the first position (the position on the most upstream side) from the upstream side in the conveying direction is fixedly arranged at this position. In addition, the connecting unit 19 existing at the third, fifth, seventh, and eighth positions from the upstream side can be replaced with the air supply unit 18, or replaced with the air supply port 14 to form an exhaust port. 20a The exhaust unit 20 described later (in FIG. 1, the exhaust unit 20 is not used). In addition, the air supply unit 18 existing at the second, fourth, and sixth positions from the upstream side may be replaced with a connection unit 19 or an exhaust unit 20 described later. Thereby, it is possible to change the number of the air supply ports 14, the position of the air supply ports 14 in the conveying direction, and the like. In addition, even when the exhaust unit 20 is arranged, the process gas 4 can be exhausted from the exhaust ports 15 and 15 at the upstream end and the downstream end. Hereinafter, the replacement of these units will be described with reference to FIGS. 3a to 3d.  [0039] In FIGS. 3a to 3c, the air supply unit 18, the connection unit 19, and the exhaust unit 20 shown surrounded by thick lines have the same length along the conveying direction. In this way, in the case of the replacement of these units, the newly configured unit with the replacement can be connected to the two adjacent units (in Figures 3a to 3c, the two adjacent units are shown respectively). (In the case of the connection unit 19), they are arranged without gaps. Moreover, the newly arranged unit system can be arranged in the vertical direction with no step difference with the adjacent two units.  [0040] Here, as shown in FIG. 3a, the peripheral area 14a of the air supply port 14 of the air supply unit 18 is higher in the vertical direction than other areas. Thereby, in the peripheral area 14a of the air supply port 14, the separation distance from the lower surface 2a of the glass substrate 2 passing through the processing space 13 becomes shorter than other areas. In the present embodiment, the separation distance between the peripheral area 14a of the air supply port 14 and the lower surface 2a of the glass substrate 2 is a half of the separation distance from the lower surface 2a of the glass substrate 2 in other areas . In addition, the portion where the separation distance is shortened is formed in a state where the tip of the gas supply port 14 (the outflow port of the processing gas 4) is close to the lower surface 2a of the glass substrate 2. Furthermore, as shown in FIG. 3c, assuming that the exhaust unit 20 is arranged, the exhaust port 20a formed in the exhaust unit 20 is formed in a state connected to the aforementioned space 16. Thereby, after the processing gas 4 system sent from the processing space 13 to the space 16 through the exhaust port 20a, it passes through the exhaust pipe 17, and is exhausted from the space 16 to the cleaning dust collector. In addition, the air supply port 20a is the same as the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end, and is formed in the shape of a slit elongated in the width direction. Here, as shown in FIG. 3d, the peripheral area 14a of the air supply port 14 of the air supply unit 18 can also be made to have the same height as other areas. [0041] As shown in FIG. 1, the top plate portion 5b is composed of a single plate body (a plate body having a rectangular shape in a plan view), and has a surface facing the upper surface 2b of the glass substrate 2 passing through the processing space 13. Flat surface. In addition, the top plate part 5b has built-in heating means (not shown) such as a heater for preventing condensation by the processing gas 4. The H steel 5c is installed so as to extend in the width direction on the top plate part 5b. In addition, a plurality of H steel 5c is provided (three in this embodiment), and these plural H steel 5c are arranged at equal intervals in the conveying direction.  [0042] The first flushing gas injection nozzle 7 is arranged on the upstream side of the processor 5 and above the conveying path of the glass substrate 2 in the conveying direction. The first flushing gas injection nozzle 7 can inject the first flushing gas 6 toward the downstream side of the conveying direction so that the gap 13a formed between the portion of the glass substrate 2 that enters the processing space 13 and the top plate portion 5b, A flow of the first flushing gas 6 along the conveying direction is formed. The gas flow of the first flushing gas 6 may be formed in the full width range of the gap 13a. In addition, the first flushing gas 6 is sprayed so that the flow velocity along the conveying direction becomes faster than the conveying speed of the glass substrate 2 by the conveying means 3. Thereby, when the front portion 2f of the glass substrate 2 is conveyed in the processing space 13, the processing gas 4 that is about to flow into the gap 13a from the front portion 2f side is rushed to the downstream in the conveying direction under the pressure of the first flushing gas 6 On the other hand, the inflow into the gap 13a can be prevented. In addition, the roughening of the upper surface 2b of the glass substrate 2 can be avoided. In addition, in this embodiment, a clean dry gas (CDA) is used as the first flushing gas 6.  [0043] As shown in FIG. 4a, the first flushing gas 6 is sprayed before the front part 2f of the glass substrate 2 being transported enters the processing space 13. And, as shown in FIG. 4b, the jetting of the first flushing gas 6 is stopped before the last part 2e of the glass substrate 2 being transported enters the processing space 13. Here, in the present embodiment, the timing at which the injection of the first flushing gas 6 is started and stopped is determined as follows. First, on the upstream side of the first flushing gas injection nozzle 7 in the conveying direction, a detection means (not shown) such as a sensor capable of detecting the leading part 2f and the last part 2e of the glass substrate 2 is arranged. If this detection means detects that the front part 2f of the glass substrate 2 passes, it is determined to start the first flushing gas based on the conveying speed of the glass substrate 2 and the distance along the conveying path from the front part 2f to the processing space 13 The time point of the injection of 6. Similarly, if the detection means detects the passage of the last part 2e, the time point when the ejection stops is determined based on the conveying speed and the distance from the last part 2e to the processing space 13.  [0044] As shown in FIG. 5, the first flushing gas injection nozzle 7 is provided with a cylindrical pipe 7a extending in the width direction. To this pipe 7a, a plurality of pipes 7b are inserted at intervals in the width direction. The first flushing gas 6 can be supplied from each tube 7b into the pipeline 7a. Also, inside the pipe 7a, a plate 7c elongated in the width direction is installed, and the first flushing gas 6 flowing from each pipe 7b into the pipe 7a is looped around the plate 7c. , It is injected from the injection part 7d connected to the pipeline 7a. The ejection port of the first flushing gas 6 formed in the ejection portion 7d is formed in a slit shape elongated in the width direction. The jetting angle θ of the first flushing gas 6 by the jetting part 7d (the angle of the upper surface 2b of the glass substrate 2 when the direction of the jetting part 7d is inclined) is within the range of 25°~70°. change. In addition, the posture of the first flushing gas injection nozzle 7 is as shown by the solid line in FIG. The part 7d points out of the processing space 13.  [0045] As shown in FIG. 6, the second flushing gas injection nozzle 24 is arranged on the downstream side of the processor 5 and above the conveying path of the glass substrate 2 in the conveying direction. The second flushing gas injection nozzle 24 can inject the second flushing gas 23 toward the upstream side of the conveying direction, so that a flow of the second flushing gas 23 in the direction opposite to the conveying direction is formed in the gap 13a. The flow of the second flushing gas 23 may be formed in the full width range of the gap 13a. With this second flushing gas 23, when the last part 2e of the glass substrate 2 is transported in the processing space 13, the second flushing gas 23 is used to transfer the process gas 4 that is going to flow into the gap 13a from the last part 2e side. The pressure rushes to the upstream side in the conveying direction, which prevents the inflow into the gap 13a. In addition, the roughening of the upper surface 2b of the glass substrate 2 can be avoided. In addition, in this embodiment, similarly to the first flushing gas 6, a clean dry gas is used as the second flushing gas 23.  [0046] In addition, the second flushing gas 23 starts to be injected after the first flushing gas 6 stops jetting, and before the last part 2e of the glass substrate 2 being transported enters the processing space 13. And, as shown in FIG. 7, just after the last part 2e of the 2nd flushing gas 23 of the glass substrate 2 being conveyed is separated from the processing space 13, the spraying is stopped. Here, the timing of the start and stop of the injection of the second flushing gas 23 can be achieved by using the aforementioned detection means to arrange a sensor on the downstream side of the second flushing gas injection nozzle 24 in the conveying direction. What is necessary is just to detect the last part 2e of the glass substrate 2, etc., such as a new detection means (not shown), etc., and to determine.  [0047] The second gas injection nozzle 24 for flushing is different from the aforementioned first gas injection nozzle 7 for flushing, and differs only in configuration, posture, etc., and a nozzle having the same structure as the first flushing gas injection nozzle 7 can be used. Therefore, with regard to the structure of the second flushing gas injection nozzle 24, repeated descriptions are omitted here.  [0048] As shown in Fig. 1, the chamber 8 has a rectangular parallelepiped shape. This chamber 8 is provided with a main body 8a having a ceiling hole 8ac in addition to the aforementioned carrying inlet 8aa and carrying outlet 8ab, and a cover 8b for sealing the ceiling hole 8ac.  [0049] The carry-in port 8aa and the carry-out port 8ab are formed in the side wall portion 8ad of the main body 8a, and are formed as a flat opening that is elongated in the width direction. A plurality of top plate holes 8ac are formed in the top plate portion 8ae of the main body 8a (three in this embodiment). The cover 8b can seal the entire opening of the top plate hole 8ac, and can be attached to and detached from the main body 8a. Thereby, by removing the cover 8b from the main body 8a, the top plate hole 8ac is opened, and operations such as adjustment, maintenance, and inspection of the processor 5 can be performed through the top plate hole 8ac. [0050] The first virtual processor 10 is provided with: a rectangular parallelepiped box 10a arranged below the conveying path of the glass substrate 2; and a top plate 10b arranged above the conveying path so as to face the box 10a; And H steel 10c as a reinforcing member to prevent deflection by the dead weight of the top plate 10b. Furthermore, between the box body 10a and the top plate 10b, a gap 21 for the glass substrate 2 to pass through is formed. The first virtual processor 10 functions as a windproof member for preventing the airflow flowing from the export port 8ab into the chamber 8 from reaching the processing space 13 and adversely affecting the etching process. Here, in order to effectively function as a windproof member, the length of the first virtual processor 10 along the conveying direction is desirably 50 mm or more, and more desirably 100 mm or more.  [0051] At the upper end of the box body 10a, a rectangular opening 10aa that is elongated in the width direction is formed. In addition, an exhaust pipe 22 connected to a cleaning dust collector (not shown) arranged outside the chamber 8 is connected to the bottom of the box body 10a. Thereby, the first virtual processor 10 treats the processing gas 4 that is attracted by the lower surface 2a of the glass substrate 2 and flows out from the processing space 13 toward the downstream side in the conveying direction, and allows the processing gas 4 to pass through the opening 10aa to be exhausted. After being sucked by the tube 22, it is discharged to the cleaning dust collector. The top plate 10b is composed of a single plate body (a plate body having a rectangular shape in a plan view), and has a flat surface facing the upper surface 2b of the glass substrate 2 passing through the gap 21. The H steel 10c is installed so as to extend in the width direction on the top plate 10b.  [0052] The first virtual processor 10 has the same appearance as the processor 5 when viewed from the direction along the conveying direction, and is arranged to appear to overlap the processor 5. That is, between the main body portion 5a of the processor 5 and the box body 10a of the first virtual processor 10, the width dimension and the dimension along the vertical direction are set to be the same. Similarly, (A) the top plate part 5b of the processor 5 and the top plate 10b of the first virtual processor 10, (B) the H steel 5c of the processor 5 and the H steel 10c of the first virtual processor 10, (C) The processing space 13 of the processor 5 and the gap 21 of the first virtual processor 10, the mutual width dimension of each combination of (A) to (C), and the dimension along the vertical direction are also set to be the same.  [0053] The second virtual processor 11 has the same structure as the aforementioned first virtual processor 10 except for the two points (1) and (2) shown below. Therefore, in FIG. 1, the same figure number as the first virtual processor 10 is added to the second virtual processor 11, and the repeated description between the two processors 10 and 11 is omitted. (1) The configuration is different from the first virtual processor 10 in this point. (2) It functions as a wind-proof member for avoiding that the airflow that flows into the chamber 8 not from the export port 8ab but from the import port 8aa reaches the processing space 13 and adversely affects the etching process. Furthermore, the second virtual processor 11 is the same as the first virtual processor 10, when viewed from the direction along the conveying direction, it has the same appearance as the processor 5, and is arranged to look like the processor 5 overlapping.  [0054] The suction nozzle 12 is installed on the ceiling portion 8ae of the chamber 8, and the suction port 12a is communicated with the space 9. The suction port 12a is arranged on the downstream side of the first virtual processor 10 in the conveying direction, and is arranged at the downstream end of the space 9 in the conveying direction. The suction nozzle 12 is connected to a cleaning dust collecting device (not shown) outside the chamber 8, and can discharge the sucked products to the cleaning dust collecting device. In addition, the suction port 12a is not limited to the same arrangement as in the present embodiment, and may be arranged above the conveyance path of the glass substrate 2. However, since it has the function of sucking the products generated by the etching process and then discharging it out of the chamber 8, even if the suction port 12a is arranged in a different arrangement from this embodiment, it is still arranged relatively far in the conveying direction. The processor 5 is preferably further downstream.  [0055] Hereinafter, a method of manufacturing a glass substrate according to an embodiment of the present invention using the aforementioned glass substrate manufacturing apparatus 1 will be described.  [0056] First, by transporting the glass substrate 2 by the transporting means 3, the glass substrate 2 is carried into the chamber 8 from the carry-in port 8aa. In addition, in this embodiment, the glass substrate 2 whose total length along the conveyance path is longer than this distance is made into the object of an etching process based on the distance along the conveyance path from 8aa to export exit 8ab. In addition, in this embodiment, the glass substrate 2 is conveyed at a constant conveying speed.  [0057] Next, the glass substrate 2 after the loading is passed through the gap 21 of the second virtual processor 11 disposed between the loading port 8aa and the processor 5. Furthermore, the gas that flows into the chamber 8 from the carry-in port 8aa and flows along the lower surface 2a of the glass substrate 2 toward the downstream side in the carrying direction is in a row connected to the bottom of the box 10a of the second virtual processor 11 The trachea 22 is attracted. In addition, by making the second virtual processor 11 function as a windproof member, it is possible to prevent the gas flowing into the chamber 8 from the import port 8aa from reaching the processing space 13 of the processor 5.  [0058] Next, the glass substrate 2 passing through the gap 21 of the second virtual processor 11 is passed through the processing space 13 of the processor 5. At this time, before entering the processing space 13 from the front portion 2f of the glass substrate 2, the first flushing gas 6 starts to be sprayed. In addition, on the lower surface 2a side of the glass substrate 2 passing through the processing space 13, the lower surface 2a is etched by the processing gas 4 supplied from each gas supply port 14, while the upstream end and downstream The respective exhaust ports 15 at the side ends exhaust the processing gas 4 from the processing space 13. In addition, on the upper surface 2b side of the glass substrate 2 passing through the processing space 13, the flow of the first flushing gas 6 formed in the gap 13a prevents the inflow into the gap 13a from the front portion 2f side of the glass substrate 2 The processing gas 4 performs etching processing on the upper surface 2b. In addition, the product generated in the etching process is sucked by the suction nozzle 12 and discharged to the outside of the chamber 8. The jetting of the first flushing gas 6 is stopped before the last part 2e of the glass substrate 2 enters the processing space 13.  [0059] Here, in this embodiment, before the last part 2e of the glass substrate 2 enters the processing space 13, the injection of the first flushing gas 6 is stopped, but it is not limited to this. If the front portion 2f of the glass substrate 2 is separated from the processing space 13, it may be a state in which the injection of the first flushing gas 6 is stopped before the last portion 2e of the glass substrate 2 enters the processing space 13. It may also be a state where the first flushing gas 6 is stopped immediately after the front portion 2f of the glass substrate 2 is separated from the processing space 13.   [0060] If the injection of the first flushing gas 6 is stopped, the first flushing gas 6 is replaced, and the injection of the second flushing gas 23 is started. Along with this, on the upper surface 2b side of the glass substrate 2 passing through the processing space 13, the flow of the second flushing gas 23 formed in the gap 13a prevents the inflow into the gap 13a from the last part 2e side of the glass substrate 2 The processing gas 4 etches the upper surface 2b. In addition, on the lower surface 2a side of the glass substrate 2 passing through the processing space 13, the lower surface 2a is then etched by the processing gas 4 supplied from each gas supply port 14, while the upstream end and The respective exhaust ports 15 at the downstream end portion discharge the processing gas 4 from the processing space 13. The second flushing gas 23 stops spraying immediately after the last part 2e of the glass substrate 2 is separated from the processing space 13. [0061] Here, in this embodiment, the second flushing gas 23 is formed to start spraying before the last part 2e of the glass substrate 2 enters the processing space 13, and stop spraying immediately after leaving the glass substrate 2. , But not limited to this. The second flushing gas 23 may be sprayed at least between the time when the last part 2e of the glass substrate 2 enters the processing space 13 and the time when it leaves.  [0062] In the present embodiment, immediately after the injection of the first flushing gas 6 is stopped, the injection of the second flushing gas 23 is started, but it is not limited to this. After stopping the injection of the first flushing gas 6, the injection of the second flushing gas 23 may be started after a predetermined time has elapsed. Thereby, it is possible to prevent the first flushing gas 6 and the second flushing gas 23 from colliding in the processing space 13 and causing turbulence in the air flow in the processing space 13. In addition, the usage amount of the first flushing gas 6 and the second flushing gas 23 can also be saved. Furthermore, the first flushing gas 6 and the second flushing gas 23 can also prevent the processing gas 4 from detouring from the lower surface 2a side of the glass substrate 2 via the side surface (along the width direction end of the glass substrate 2) in the conveying direction. The effect of entering the upper surface 2b side. Therefore, the predetermined time from the stop of the injection of the first flushing gas 6 to the start of the injection of the second flushing gas 23 is from the viewpoint of preventing the gas from colliding with each other in the processing space 13 and preventing the aforementioned bypassing entry. It is better to be as short as possible, ideally 0.5 second to 2 seconds, more ideally 0.5 second to 1 second. In addition, from the viewpoint of saving the usage of the first flushing gas 6 and the second flushing gas 23, the aforementioned predetermined time is preferably as long as possible, and the predetermined time is ensured so that the leading part 2f of the glass substrate 2 After the processing space 13 is separated, the injection of the first flushing gas 6 is stopped, and the second flushing gas 23 is injected before the last part 2e of the glass substrate 2 enters the processing space 13. [0063] Also, in the present embodiment, before the last part 2e of the glass substrate 2 enters the processing space 13, the jetting of the first flushing gas 6 is stopped, and the jetting of the first flushing gas 6 The time is longer than the injection time of the second flushing gas 23, but it is not limited to this. It is also possible to stop the injection of the first flushing gas 6 immediately after the front portion 2f of the glass substrate 2 separates from the processing space 13, and then immediately start the injection of the second flushing gas 23, so that the second flushing gas 23 can be removed. The injection time of is set to be longer than the injection time of the first flushing gas 6. In addition, by appropriately securing the aforementioned predetermined time, the injection time of the first flushing gas 6 and the injection time of the second flushing gas 23 may be set to the same time. In addition, in order to ensure the aforementioned predetermined time, the injection time of the first flushing gas 6 may be set to be longer than the injection time of the second flushing gas 23, or may be set to be shorter.  [0064] Next, the glass substrate 2 that has passed through the etching process in the processing space 13 of the processor 5 is passed through the gap 21 of the first virtual processor 10 arranged between the processor 5 and the export port 8ab. Furthermore, the gas flowing from the outlet 8ab into the chamber 8 and flowing along the lower surface 2a of the glass substrate 2 toward the upstream side in the conveying direction is a row connected to the bottom of the box 10a of the first virtual processor 10 The trachea 22 is attracted. In addition, by making the first virtual processor 10 function as a windproof member, it is possible to prevent the gas flowing into the chamber 8 from the export port 8ab from reaching the processing space 13 of the processor 5. In addition, the processing gas 4 sucked by the lower surface 2a of the glass substrate 2 by the exhaust pipe 22 and flowing out of the processing space 13 toward the downstream side in the conveying direction is exhausted to the outside of the chamber 8.  [0065] Finally, the glass substrate 2 after passing through the gap 21 of the first virtual processor 10 is carried out from the export port 8ab to the outside of the chamber 8. Then, the glass substrate 2 which performed the etching process on the lower surface 2a was obtained. As shown above, the manufacturing method of the glass substrate of the embodiment of this invention is completed.  [0066] Hereinafter, the main functions and effects of the manufacturing method of the glass substrate according to the embodiment of the present invention will be described.  [0067] In this method, before the last portion 2e of the glass substrate 2 enters the processing space 13, the spraying of the first flushing gas 6 is stopped. Thereby, after the final portion 2e enters the processing space 13, it is possible to prevent the processing gas 4 aggravated by the first flushing gas 6 from flowing into the gap 13a from the rear side of the final portion 2e. As a result, the improper roughening of the upper surface 2b of the last part 2e disappears, and the deterioration of the quality of the glass substrate 2 can be prevented.

[0068]2‧‧‧玻璃基板2a‧‧‧下表面2e‧‧‧最後部分2f‧‧‧前頭部分4‧‧‧處理氣體5a‧‧‧本體部(下部構成體)5b‧‧‧頂板部(上部構成體)6‧‧‧第一沖洗用氣體13‧‧‧處理空間13a‧‧‧間隙14‧‧‧供氣口23‧‧‧第二沖洗用氣體[0068] 2. ‧ ‧ glass substrate 2a ‧ ‧ lower surface 2e ‧ ‧ last part 2f ‧ ‧ front part 4 ‧ ‧ processing gas 5a ‧ ‧ body part (lower structure) 5b ‧ ‧ top plate part (Upper structure) 6‧‧‧First flushing gas 13‧‧‧Processing space 13a‧‧‧Gap 14‧‧‧Air supply port 23‧‧‧Second flushing gas

[0024]   圖1係顯示玻璃基板的製造裝置之概略的縱斷側面圖。   圖2係顯示從上方觀看玻璃基板的製造裝置所具有的處理器之本體部的平面圖。   圖3a係放大顯示玻璃基板的製造裝置所具有的處理器之一部分的縱斷側面圖。   圖3b係放大顯示玻璃基板的製造裝置所具有的處理器之一部分的縱斷側面圖。   圖3c係放大顯示玻璃基板的製造裝置所具有的處理器之一部分的縱斷側面圖。   圖3d係放大顯示玻璃基板的製造裝置所具有的處理器之一部分的縱斷側面圖。   圖4a係放大顯示玻璃基板的製造裝置所具有的第一沖洗用氣體噴射噴嘴的附近之縱斷側面圖。   圖4b係放大顯示玻璃基板的製造裝置所具有的第一沖洗用氣體噴射噴嘴的附近之縱斷側面圖。   圖5係放大顯示玻璃基板的製造裝置所具有的第一沖洗用氣體噴射噴嘴的附近之縱斷側面圖。   圖6係顯示玻璃基板的製造裝置之處理空間的附近之縱斷側面圖。   圖7係顯示玻璃基板的製造裝置之處理空間的附近之縱斷側面圖。[0024]    FIG. 1 is a longitudinal sectional side view showing the outline of a manufacturing apparatus of a glass substrate.   FIG. 2 is a plan view of the main body of the processor included in the glass substrate manufacturing apparatus viewed from above.   Fig. 3a is a longitudinal sectional side view showing an enlarged part of a processor included in the manufacturing apparatus of a glass substrate.   FIG. 3b is an enlarged longitudinal sectional side view showing a part of the processor included in the glass substrate manufacturing apparatus.   Fig. 3c is an enlarged longitudinal sectional side view showing a part of the processor included in the glass substrate manufacturing apparatus.   FIG. 3d is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.   FIG. 4a is an enlarged longitudinal sectional side view showing the vicinity of the first flushing gas injection nozzle included in the glass substrate manufacturing apparatus.   FIG. 4b is an enlarged longitudinal sectional side view showing the vicinity of the first flushing gas injection nozzle included in the glass substrate manufacturing apparatus.   Fig. 5 is an enlarged longitudinal sectional side view showing the vicinity of the first flushing gas injection nozzle included in the glass substrate manufacturing apparatus.   Fig. 6 is a longitudinal sectional side view showing the vicinity of the processing space of the glass substrate manufacturing apparatus.   FIG. 7 is a longitudinal sectional side view showing the vicinity of the processing space of the glass substrate manufacturing apparatus.

2‧‧‧玻璃基板 2‧‧‧Glass substrate

2a‧‧‧下表面 2a‧‧‧Lower surface

2b‧‧‧上表面 2b‧‧‧Upper surface

2e‧‧‧最後部分 2e‧‧‧The last part

3a‧‧‧滾子 3a‧‧‧roller

5‧‧‧處理器 5‧‧‧Processor

5a‧‧‧本體部(下部構成體) 5a‧‧‧Main body (lower structure)

5aa‧‧‧上游側端緣 5aa‧‧‧Upstream side edge

5b‧‧‧頂板部(上部構成體) 5b‧‧‧Top plate (upper body)

5c‧‧‧H鋼 5c‧‧‧H steel

7‧‧‧第一沖洗用氣體噴射噴嘴 7‧‧‧Gas jet nozzle for the first flush

13‧‧‧處理空間 13‧‧‧Processing space

13a‧‧‧間隙 13a‧‧‧Gap

15‧‧‧排氣口 15‧‧‧Exhaust port

19(19x)‧‧‧連接單元 19(19x)‧‧‧Connecting unit

Claims (5)

一種玻璃基板之製造方法,係當一邊將玻璃基板以平放姿勢朝搬運方向搬運,使其通過形成於對向配置的上部構成體與下部構成體之相互間的處理空間,一邊藉由從設在前述下部構成體的供氣口朝前述處理空間供給的處理氣體,對前述玻璃基板的下表面實施蝕刻處理時,朝前述搬運方向的下游側噴射第一沖洗用氣體,使得在形成於前述玻璃基板中之進入到前述處理空間的部位與前述上部構成體之間的間隙,形成沿著前述搬運方向且沿著前述玻璃基板的上表面之前述第一沖洗用氣體的氣流之玻璃基板之製造方法,其特徵為:在前述玻璃基板的最後部分進入到前述處理空間之前,停止進行前述第一沖洗用氣體的噴射。 A method of manufacturing a glass substrate, when the glass substrate is transported in a horizontal position in the conveying direction, and passed through the processing space formed between the upper and lower structures that are arranged oppositely, while the When the processing gas is supplied to the processing space through the air supply port of the lower structure, when the lower surface of the glass substrate is etched, the first flushing gas is sprayed toward the downstream side of the conveying direction, so that the glass is formed on the glass substrate. A method for manufacturing a glass substrate in which the gap between the portion of the substrate that enters the processing space and the upper structural body forms a flow of the first flushing gas along the conveying direction and along the upper surface of the glass substrate It is characterized in that the spraying of the first flushing gas is stopped before the last part of the glass substrate enters the processing space. 如申請專利範圍第1項之玻璃基板之製造方法,其中,在前述玻璃基板的前頭部分進入到前述處理空間之前,開始進行前述第一沖洗用氣體的噴射。 For example, the manufacturing method of the glass substrate of the first item of the scope of patent application, wherein, before the front part of the glass substrate enters the processing space, the injection of the first flushing gas is started. 如申請專利範圍第1或2項之玻璃基板之製造方法,其中,當對沿著前述搬運方向的長度較前述處理空間長之前述玻璃基板的下表面實施蝕刻處理時,在前述玻璃基板的前頭部分從前述處理空間脫離後,停止進行前述第一沖洗用氣體的噴射。 For example, the manufacturing method of the glass substrate of the first or second patent application, wherein, when the lower surface of the glass substrate whose length along the conveying direction is longer than the processing space is etched, After the part is separated from the processing space, the injection of the first flushing gas is stopped. 如申請專利範圍第1或2項之玻璃基板之製造方法,其中,在從前述玻璃基板的最後部分進入到前述處理空間的時間點到脫離的時間點之間,朝前述搬運方向的上游側噴射第二沖洗用氣體,使得在前述間隙形成沿著與前述搬運方向相反方向且沿著前述玻璃基板的上表面之前述第二沖洗用氣體的氣流。 For example, the manufacturing method of the glass substrate of the first or second patent application, wherein, from the time point when the last part of the glass substrate enters the processing space to the time point when it leaves, the spray is directed toward the upstream side of the conveying direction The second flushing gas forms a flow of the second flushing gas along the upper surface of the glass substrate in the direction opposite to the conveying direction in the gap. 如申請專利範圍第4項之玻璃基板之製造方法,其中,使用清淨乾燥氣體作為前述第一沖洗用氣體及第二沖洗用氣體。 For example, the manufacturing method of the glass substrate of the fourth item of the scope of patent application, wherein a clean and dry gas is used as the first and second flushing gas.
TW106138538A 2016-11-16 2017-11-08 Manufacturing method of glass substrate TWI741062B (en)

Applications Claiming Priority (2)

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