CN109790064A - The manufacturing method of glass substrate - Google Patents

The manufacturing method of glass substrate Download PDF

Info

Publication number
CN109790064A
CN109790064A CN201780059814.4A CN201780059814A CN109790064A CN 109790064 A CN109790064 A CN 109790064A CN 201780059814 A CN201780059814 A CN 201780059814A CN 109790064 A CN109790064 A CN 109790064A
Authority
CN
China
Prior art keywords
glass substrate
purge gas
processing space
gas
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780059814.4A
Other languages
Chinese (zh)
Other versions
CN109790064B (en
Inventor
中塚弘树
山本好晴
大野和宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Publication of CN109790064A publication Critical patent/CN109790064A/en
Application granted granted Critical
Publication of CN109790064B publication Critical patent/CN109790064B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063Transporting devices for sheet glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B35/00Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Cleaning In General (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides a kind of manufacturing method of glass substrate (2), wherein, glass substrate (2) is being carried with laying flat posture along carry direction, so that the glass substrate (2) passes through during processing space (13) of main part (5a) and top plate portion (5b) arranged opposite formed between each other, using be supplied to from the air supply opening (14) that main part (5a) has the processing gas (4) of processing space (13) come to glass substrate (2) lower surface (2a) implement etching process when, the first purge gas 6 is sprayed towards the downstream side of carry direction, so that in the gap (13a) being formed between the position for entering processing space (13) in glass substrate 2 and top plate portion (5b), form the flowing of the first purge gas (6) along carry direction, wherein , before the rearmost part (2e) of glass substrate (2) enters processing space (13), stop injection the first purge gas (6).

Description

The manufacturing method of glass substrate
Technical field
The present invention relates to the manufacturing method of glass substrate, the manufacturing method of the glass substrate is included in glass substrate with flat Put posture while carry, the process that is etched using lower surface of the processing gas such as hydrogen fluoride to glass substrate.
Background technique
It is well known that glass substrate is used for headed by the mobile terminals such as flat-panel monitor, smart phone, plate PC Various electronic equipments, wherein flat-panel monitor is caused with liquid crystal display, plasma display, organic el display, field Active display etc. is representative.
In the manufacturing process of the glass substrate, led to the problem of sometimes because electrostatic causes.An example is enumerated, in order to glass Glass substrate implement as defined in processing and when glass substrate is placed on supporting station, sometimes due to electrostatic and cause glass substrate viscous It is attached on supporting station.In this case, when lifting the glass substrate of end for the treatment of from supporting station, glass substrate has Shi Fasheng is damaged.
In this regard, as countermeasure regarding to the issue above, it is known to following method: before the processing as defined in implementing, benefit Etching process is implemented to the surface of glass substrate with processing gas such as hydrogen fluoride, makes surface roughening, thus come avoid generating because The problem of electrostatic causes.Moreover, Patent Document 1 discloses the methods for implementing etching process for the surface to glass substrate An example.
In method disclosed in the document, while carrying glass substrate to lay flat posture, using configuration at this The processing gas that processor (in the publication by surface processing device) in transport path supplies (is in the publication reaction Gas), etching process only is implemented to the lower surface in the upper and lower surface of glass substrate.
Processor used in this method has to be constituted across the opposed top of the transport path of glass substrate up and down Body (being in the publication top plate) and lower part constitute body (being in the publication bottom structure body), constituted at two body it is mutual it Between form the processing space (being in the publication reaction chamber) for implementing etching process.Lower part, which constitutes body, to be had for processing Space supplies the air supply opening of processing gas and for the exhaust outlet from processing space discharge processing gas.
Moreover, in the method, supplying processing gas to processing space from air supply opening on one side and passing through exhaust outlet from processing Processing gas is discharged in space, is implemented at etching to along with carrying by the lower surface of the glass substrate of processing space on one side Reason, is thus roughened lower surface.In addition, in the method, should only make the lower surface of glass substrate be roughened in order to prevent Processing gas also upper surface is caused to be roughened, and spray purge gas (being in the publication substitution gas).
Purge gas is sprayed by the downstream side of the carry direction towards glass substrate, in the entrance being formed in glass substrate It is constituted in the gap between body to the position of processing space and top, forms the flowing along carry direction.Moreover, using The pressure of the purge gas flowed in gap come avoid processing gas from the fore head sideshake of glass substrate enter, thus come Prevent the roughening of upper surface.
Citation
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2012-191001 bulletin
Summary of the invention
Subject to be solved by the invention
However, in the case where using the above method, following such to solve the problems, such as is produced.
That is, in the methods described above, even if also injection purges after the rearmost part of glass substrate enters processing space Gas.The processing gas blown afloat as a result, by the pressure of purge gas is from the rear lateral of rearmost part for entering processing space The gap stated flows into, and is roughened the upper surface of rearmost part undeservedly, and presence leads to the quality decline of glass substrate so as a result, The problem of.
In view of the foregoing and complete the invention solves technical task be, by glass substrate to lay flat posture While carrying, when implementing etching process using lower surface of the processing gas to glass substrate, the quality of glass substrate is prevented Decline.
Solution
A kind of manufacturing method of glass substrate of the present invention completed to solve the above problems, by glass substrate with flat It puts posture to carry along carry direction, so that the glass substrate constitutes body with lower part by constituting body on top arranged opposite During the processing space formed between each other, it is supplied to from processing space using the air supply opening that body has is constituted from lower part When process gases is implemented etching process to the lower surface of glass substrate, the first purge gass are sprayed towards the downstream side of carry direction Body, so that being formed in the gap being formed between the position for entering processing space in glass substrate and top composition body Along the flowing of the first purge gas of carry direction, which is characterized in that the rearmost part of glass substrate enter processing space it Before, stop the first purge gas of injection.
In the method, before the rearmost part of glass substrate enters processing space, stop the first purge gas of injection.By This, necessarily prevents the processing gas blown afloat after rearmost part enters processing space by the pressure of the first purge gas from last The rear lateral gap in portion is (between being formed between the position for entering processing space in glass substrate and top composition body Gap, following table are denoted as side clearance) flow into the occurrence of such.As a result, the upper surface of rearmost part will not be improper Ground roughening, can prevent the decline of the quality of glass substrate.
In the methods described above, it is preferred that before the fore head of glass substrate enters processing space, start injection One purge gas.
In this way, at the time point after the fore head of glass substrate has just enter into processing space, can become upper Side clearance forms the state of the flowing of the first purge gas.Thereby, it is possible to reliably avoid the upper surface of fore head improper The occurrence of ground roughening is such.Therefore, in terms of preventing the decline of quality of glass substrate advantageously.
In the methods described above, it is preferred that in the glass substrate longer than processing space to the length along carry direction Lower surface implement etching process when, glass substrate fore head after processing space disengaging, stop injection and first blow Scavenging body.
About the length along carry direction, in the case where glass substrate is longer than processing space, before glass substrate At the time point (following table is denoted as fore head separation time point) that head is detached from from processing space, processing space is in its overall length by glass The state of glass substrate vertically disjunction.Moreover, the upside, i.e. upper side clearance in processing space after disjunction are formed with first and blow Therefore the flowing of scavenging body becomes and the state of processing gas is not present in upper side clearance.In addition, processing gas be extremely hard to from The downside in processing space after disjunction is surround to upside (upper side clearance),.According to above scheme, be in advance portion's separation time point Later, even if not spraying the first purge gas, it also can be avoided the roughening of upper surface, therefore, if stopping injection, correspondingly It is able to suppress the manufacturing cost of glass substrate.
In the methods described above, it is preferred that the time point that processing space is entered from the rearmost part of glass substrate to During until the time point being detached from from processing space, the second purge gas is sprayed towards the upstream side of carry direction, so that The flowing of the second purge gas along the direction opposite with carry direction is formed in upper side clearance.
In this way, during entering processing space until being detached from from processing space from the rearmost part of glass substrate, energy Enough flowings using the second purge gas for being formed in side clearance, are prevented more reliably rear of the processing gas from rearmost part Laterally upper side clearance flows into the occurrence of such.As a result, can more suitably prevent the quality of glass substrate Decline.
In the methods described above, clean dry air is used preferably as the first purge gas and the second purge gas.
In this way, cheap clean dry air is used as the first purge gas and the second purge gas, it therefore, can Inhibit the cost associated with the injection of the first purge gas and the second purge gas.As a result, being able to suppress glass substrate Manufacturing cost.In addition, can reliably be avoided by using clean dry air because of the first purge gas and the second purge gas Injection and cause glass substrate to be contaminated the occurrence of such.
Invention effect
According to the present invention, to glass substrate while by glass substrate to lay flat posture carrying, using processing gas When etching process is implemented in lower surface, the decline of the quality of glass substrate can be prevented.
Detailed description of the invention
Fig. 1 is the longitudinal cross-sectional side view for showing the summary of manufacturing device of glass substrate.
Fig. 2 is the top view of the main part for the processor that the manufacturing device of glass substrate viewed from above has.
Fig. 3 a is the longitudinal cross-sectional side view shown in a part amplification for the processor for having the manufacturing device of glass substrate.
Fig. 3 b is the longitudinal cross-sectional side view shown in a part amplification for the processor for having the manufacturing device of glass substrate.
Fig. 3 c is the longitudinal cross-sectional side view shown in a part amplification for the processor for having the manufacturing device of glass substrate.
Fig. 3 d is the longitudinal cross-sectional side view shown in a part amplification for the processor for having the manufacturing device of glass substrate.
Fig. 4 a is to amplify to show near the first purge gas injection nozzle for having the manufacturing device of glass substrate Longitudinal cross-sectional side view.
Fig. 4 b is to amplify to show near the first purge gas injection nozzle for having the manufacturing device of glass substrate Longitudinal cross-sectional side view.
Fig. 5 is near the first purge gas injection nozzle for having the manufacturing device of glass substrate shown in amplification Longitudinal cross-sectional side view.
Fig. 6 is the longitudinal cross-sectional side view near the processing space shown in the manufacturing device of glass substrate.
Fig. 7 is the longitudinal cross-sectional side view near the processing space shown in the manufacturing device of glass substrate.
Specific embodiment
Hereinafter, being illustrated referring to manufacturing method of the attached drawing to the glass substrate of embodiments of the present invention.Firstly, to The manufacturing device of glass substrate used in the manufacturing method of glass substrate is illustrated.
Here, in the following description, the carry direction of glass substrate (from right towards left direction in Fig. 1) table is remembered For " carry direction ".In addition, by the width direction of the glass substrate orthogonal with carry direction (relative to paper vertical in Fig. 1 Direction) table is denoted as " width direction ", and will be denoted as " entire width " or " broad-ruler along the length table of " width direction " It is very little ".In addition, the direction table of the upper and lower surface vertical relative to glass substrate is denoted as " up and down direction ".
As shown in Figure 1, the manufacturing device 1 of glass substrate has as main constituent element: handling unit 3 is used for Glass substrate 2 is horizontally carried with laying flat posture;Processor 5, be used for using processing gas 4 (in the present embodiment for Hydrogen fluoride) etching process is implemented to the lower surface 2a of the glass substrate 2 in carrying;First purge gas injection nozzle 7 and second Purge gas injection nozzle 24 sprays first for preventing the etching process of the upper surface 2b for glass substrate 2 respectively Purge gas 6 and the second purge gas 23 (referring to Fig. 6);Chamber 8, moving in mouthful 8aa and move out mouth with glass substrate 2 8ab and for preventing processing gas 4 from leaked out to outside from being formed in the space 9 of therein;In the transport road of glass substrate 2 It is configured at processor 5 on diameter and moves out the first illusory processor 10 between mouthful 8ab and is configured at processor 5 and moves in a mouthful 8aa Between the second illusory processor 11;And attract nozzle 12, it is used for in the lower surface of processing gas 4 and glass substrate 2 The product generated in the reaction of 2a attract and be discharged to outside chamber 8.
Handling unit 3 is the multiple roller 3a arranged in the transport path of glass substrate 2.It, can by multiple roller 3a Glass substrate 2 is carried along the transport path extended on straight line.Along the mutual of the adjacent roller 3a of carry direction Between, the entire width of the lower surface 2a of glass substrate 2 becomes the state exposed.Pass through the lower surface 2a and processing gas of the exposing Body 4 reacts, and is roughened the entire width of lower surface 2a to implement etching process.It should be noted that as carrying The component other than multiple roller 3a also can be used in unit 3, as long as can make in carrying, the lower surface 2a's of glass substrate 2 is whole A width exposes, then other components also can be used.
Processor 5 has: up and down across the opposed main body for constituting body as lower part of the transport path of glass substrate 2 Portion 5a, the top plate portion 5b of body is constituted as top and the conduct for preventing the flexure because of caused by the self weight of top plate portion 5b The H profile steel 5c of stiffener.In the mutual of main part 5a and top plate portion 5b, it is formed with for the glass base passed through herein The processing space 13 of the implementation etching process of plate 2.The processing space 13 is formed as flat space.The width dimensions of processing space 13 W1 (referring to Fig. 2) and along up and down direction thickness T1 be respectively greater than glass substrate 2 entire width W2 (referring to Fig. 2) and The thickness T2 of glass substrate 2.
Here, when glass substrate 2 enters inside from the outside of processing space 13, it is present in glass substrate in order to prevent The gases such as the air around 2 are concomitantly flowed into processing space 13, along the length of the processing space 13 of carry direction In the range of size L1 is preferably 300mm~2000mm, in the range of more preferably 600mm~1000mm.It should be noted that From the viewpoint of the first purge gas 6 of suitable injection, above-mentioned length dimension L1 is different from the mode in present embodiment, excellent It selects longer along the length of carry direction than glass substrate 2.In addition, the thickness T1 of processing space 13 be preferably 4mm~ In the range of 30mm.In addition, the ratio (length dimension L1/ thickness T1) of above-mentioned length dimension L1 and thickness T1 In the range of value preferably 10~250.
Main part 5a has the shape of rectangular-shape.Main part 5a has: for supplying with spraying to processing space 13 The air supply opening 14 of processing gas 4;Exhaust outlet 15 for attracting processing gas 4 from processing space 13 and discharging it;And it uses The heater etc. of moisture condensation caused by the processing gas 4 of opposite processing space 13 supply is heated and prevented because of processing gas 4 Heating unit (illustration omitted).Exhaust outlet 15 is arranged respectively at upstream side end and the downstream side of the carry direction in main part 5a End.On the other hand, air supply opening 14 between the exhaust outlet 15 of upstream side end and the exhaust outlet 15 of end of downstream side along Carry direction is configured with multiple (being in the present embodiment three).
The processing of the air supply opening 14 of the most downstream side of carry direction in multiple air supply openings 14 supplied to processing space 13 The flow of gas 4 is most, in the present embodiment, compared with other air supply openings 14, supplies the processing gas 4 of twice of flow. On the other hand, in the mutual of multiple air supply openings 14, the concentration of the processing gas 4 supplied is identical.Each air supply opening 14 is on edge The mutual and processing space 13 of the adjacent roller 3a of carry direction connect.In addition, the processing gas 4 that each air supply opening 14 supplies Flow be respectively fixed in per unit time.Here, about the distance along carry direction, from the gas supply of most upstream side Mouthfuls 14 distance L2 until the air supply opening 14 in center with until central air supply opening 14 to the air supply opening 14 of most downstream side Distance L3 is equal.It should be noted that in the present embodiment, configuration there are three air supply opening 14, but not limited to this, can also be with Two air supply openings 14 are configured, more than four air supply openings 14 can also be configured.
The exhaust outlet 15 of upstream side end and the exhaust outlet 15 of end of downstream side are able to attract from processing space 13 Processing gas 4 to the space 16 for the inside for being formed in main part 5a be sent into.Space 16 with and the cleaning collection that is configured at outside chamber 8 The exhaust pipe 17 of dirt device (illustration omitted) connection is connected.Space 16 is sent to from processing space 13 by exhaust outlet 15 as a result, Processing gas 4 later by exhaust pipe 17 from space 16 to cleaning dust collect plant discharge.It should be noted that exhaust pipe 17 connect with the end of downstream side of the carry direction in space 16.In the exhaust outlet 15 of upstream side end and the row of end of downstream side Port 15 can be set and (not only include processing gas 4 for " gas ", further include from processing space to the gas being discharged 13 outside is introduced into the air etc. that exhaust outlet 15 is attracted to after inside) the mechanism that is individually adjusted of flow.It is another Aspect, also can be by blocking the opening portion of exhaust outlet 15 connecting with processing space 13 or constituting the portion of exhaust outlet 15 Position is unloaded from main part 5a and blocks the hole being connected to space 16, to omit exhaust outlet 15.
Here, each exhaust outlet 15 is from compared with the flow for the processing gas 4 that each air supply opening 14 is supplied to processing space 13 The flow for managing the gas that space 13 is discharged is more.It should be noted that the flow for the gas that each exhaust outlet 15 is discharged is in per unit It is fixed in time.In addition, about the distance along carry direction, the exhaust outlet 15 of end of downstream side and the confession of most downstream side The mutual spacing of port 14 is from D2 than the mutual spacing of the exhaust outlet 15 of upstream side end and the air supply opening 14 of most upstream side from D1 It is long.Length of the mutual spacing from D2 is preferably 1.2 times or more of length of the mutual spacing from D1, more preferably 1.5 times or more, most Preferably 2 times or more.
As shown in Fig. 2, air supply opening 14 and 15 both of which of exhaust outlet are formed as the slit-shaped in strip in the direction of the width. The width dimensions of air supply opening 14 can be more slightly shorter than the entire width of glass substrate 2 as shown in the figure, can also be with the figure not It is slightly longer than the entire width of glass substrate 2 with ground.On the other hand, the width dimensions of exhaust outlet 15 are entire wider than glass substrate 2 Degree is slightly long.Here, in order to equably supply processing gas 4 readily along width direction, preferably air supply opening 14 along carrying side To Opening length S1 be 0.5mm~5mm in the range of.It should be noted that the opening along carry direction of exhaust outlet 15 Opening length S1 long along carry direction of the length than air supply opening 14.In addition, in order to avoid the gas carried out based on exhaust outlet 15 The attraction of body hampers execution smoothly etching process, preferably from the upstream side ora terminalis 5aa of main part 5a to upstream side end Distance L4 until exhaust outlet 15 with until the ora terminalis 5ab to the exhaust outlet 15 of end of downstream side of downstream side distance L4 be all In the range of 1mm~20mm.
As shown in Figure 1, the top opposed with the lower surface 2a of glass substrate 2 passed through in processing space 13 in main part 5a Portion is that multiple units made of seamlessly arranging along carry direction (are in the present embodiment eight, including aftermentioned confession Gas unit 18 and connection unit 19).This multiple unit constitutes the top of main part 5a, and constitutes the ceiling in above-mentioned space 16 Portion.
In multiple units, comprising being formed with the air supply unit 18 of air supply opening 14 and not forming the connection unit of air supply opening 14 19 (in Fig. 2, air supply unit 18 and connection unit 19 are surrounded by thick line respectively).In the present embodiment, the row of multiple units In column, air supply unit 18 arranges at second, the 4th and the 6th position the upstream side from carry direction.Another party Face, first, third, five, seven and eight position of the connection unit 19 the upstream side from carry direction Place's arrangement.Air supply unit 18 has the spray nozzle of the gas supply 18a linked with air supply opening 14, and spray nozzle of the gas supply 18a and configuration are outside chamber 8 Processing gas 4 generator (illustration omitted) connection.Connection unit 19 is by the mutual of adjacent air supply unit 18 and supplies It is connected between gas unit 18 and exhaust outlet 15.
Here, the connection list being present at first from the upstream side of carry direction position (position of most upstream side) 19 (19x) of member are fixedly configured at this location.On the other hand, it is present in third from upstream side, the 5th, the 7th And the connection unit 19 of the 8th position can be replaced with air supply unit 18, or be formed with exhaust outlet with air supply opening 14 is replaced Aftermentioned exhaust unit 20 (in Fig. 1, exhaust unit 20 is not used) displacement of 20a.In addition, about being present in from upstream side Air supply unit 18 at second, the 4th and the 6th position, also can be with connection unit 19 or aftermentioned exhaust unit 20 Displacement.Thereby, it is possible to the positions of the quantity to air supply opening 14, the air supply opening 14 in carry direction to be changed.Moreover, it is assumed that In the case where being configured with exhaust unit 20, also can except two exhaust outlets 15,15 of upstream side end and end of downstream side into The exhaust of row processing gas 4.Hereinafter, being illustrated referring to Fig. 3 a~Fig. 3 d to the displacement of these units.
In each figure of Fig. 3 a~Fig. 3 c, the air supply unit 18, connection unit 19 and the exhaust that are shown by thick line encirclement Unit 20 it is mutually the same along the length of carry direction.As a result, in the case where the displacement for carrying out these units, along with Replace and the unit that reconfigures can be adjacent with its two units (in each figure of Fig. 3 a~Fig. 3 c, illustrate phase The case where two adjacent units are connection unit 19) seamlessly arrange.In addition, the unit reconfigured can with it is adjacent Two units are in the up-down direction without just poorly arranging.
Here, as shown in Figure 3a, the neighboring area 14a of the air supply opening 14 in air supply unit 18 is compared with other regions upper Lower section is located at a high position upwards.As a result, in the neighboring area 14a of air supply opening 14, compared with other regions, with pass through processing space 13 In the separating distance of lower surface 2a of glass substrate 2 shorten.In the present embodiment, the neighboring area 14a of air supply opening 14 With the separating distance of the lower surface 2a of glass substrate 2 compared to other regions the separation with the lower surface 2a of glass substrate 2 away from With a distance from half.Moreover, shorten correspondingly with separating distance, the front end (outflow of processing gas 4 of air supply opening 14 Mouthful) become the state close with the lower surface 2a of glass substrate 2.In addition, as shown in Figure 3c, it is assumed that be configured with exhaust unit 20 In the case where, the exhaust outlet 20a for being formed in the exhaust unit 20 becomes the state being connected with above-mentioned space 16.Pass through as a result, Exhaust outlet 20a and be sent to the processing gas 4 in space 16 from processing space 13 and passing through exhaust pipe 17 later from space 16 to clear Wash dust collect plant discharge.It should be noted that the exhaust of exhaust outlet 20a and the exhaust outlet of upstream side end 15 and end of downstream side Mouth 15 similarly, is formed as the slit-shaped in the direction of the width in strip.Here, as shown in Figure 3d, the confession in air supply unit 18 The neighboring area 14a of port 14 may be height identical with other regions.
As shown in Figure 1, top plate portion 5b is single plate body (overlooking the plate body in rectangle), there is and pass through processing space 13 In glass substrate 2 the opposed flat surface of upper surface 2b.In addition, top plate portion 5b is built-in with for preventing from drawing because of processing gas 4 The heating units (illustration omitted) such as the heater of moisture condensation risen.H profile steel 5c is set as extending in the width direction on top plate portion 5b. In addition, H profile steel 5c is provided with multiple (being in the present embodiment three), this multiple H profile steel 5c in carry direction at equal intervals Ground configuration.
First purge gas injection nozzle 7 configures than processor 5 in carry direction on the upstream side and than glass substrate 2 Transport path configures against the top.The first purge gas injection nozzle 7 can spray first towards the downstream side of carry direction and blow Scavenging body 6, so that in the gap being formed between the position for entering processing space 13 in glass substrate 2 and top plate portion 5b In 13a, the flowing of the first purge gas 6 along carry direction is formed.The flowing of first purge gas 6 can be in gap 13a Entire width on formed.In addition, the first purge gas 6 is along the 3 moving glass base of velocity ratio handling unit of carry direction The mode that the transporting velocity of plate 2 is fast is sprayed.As a result, when carrying the fore head 2f of glass substrate 2 in processing space 13, The processing gas 4 for being intended to flow into gap 13a using the pressure of the first purge gas 6 from the side fore head 2f rushes to carry direction Downstream side can prevent processing gas 4 to the inflow of gap 13a.Then, the coarse of the upper surface 2b of glass substrate 2 is avoided Change.It should be noted that in the present embodiment, using clean dry air (CDA) as the first purge gas 6.
As shown in fig. 4 a, the fore head 2f of the glass substrate 2 in carrying starts to spray before will entering processing space 13 Penetrate the first purge gas 6.In addition, as shown in Figure 4 b, the rearmost part 2e of the glass substrate 2 in carrying will enter processing space Stop the first purge gas 6 of injection before 13.Here, in the present embodiment, the beginning of the injection of the first purge gas 6 is carried out And the opportunity stopped being determined like that by following.Firstly, leaning on upstream than the first purge gas injection nozzle 7 in carry direction The position of side, configured be capable of fore head 2f to glass substrate 2 and rearmost part 2e by inspections such as the sensors that is detected It surveys unit (illustration omitted).When the detection unit detection glass substrate 2 fore head 2f by when, based on glass substrate 2 Transporting velocity and 13 from fore head 2f to processing space until the distance along transport path, first blown to determine to start injection The opportunity of scavenging body 6.Similarly, when detection unit detection rearmost part 2e by when, based on transporting velocity and from rearmost part 2e Distance until processing space 13, to determine to stop the opportunity of injection.
As shown in figure 5, the first purge gas injection nozzle 7 has the pipeline 7a of cylindrical shape extended in the direction of the width. Multiple pipe 7b are inserted at spaced intervals in the direction of the width to pipeline 7a.First can be supplied into pipeline 7a from each pipe 7b to blow Scavenging body 6.In addition, being equipped in the inside of pipeline 7a and being flowed into pipe in plate body 7c, the Cong Geguan 7b of strip in the direction of the width The first purge gas 6 in road 7a after, is sprayed in a manner of around plate body 7c from the ejection section 7d linked with pipeline 7a. The jet port for being formed in the first purge gas 6 of ejection section 7d is formed as the slit-shaped in strip in the direction of the width.Ejection section 7d sprays spray angle θ (upper surface 2b of the direction pointed by ejection section 7d relative to glass substrate 2 of the first purge gas 6 Inclined angle) it can be changed in the range of 25 °~70 °.In addition, the posture of the first purge gas injection nozzle 7 can be as The shown in solid of Fig. 5 is adjusted to be directed toward ejection section 7d in processing space 13 like that, also can be as shown in the double dot dash line of the figure It is adjusted to be directed toward ejection section 7d outside processing space 13 like that.
As shown in fig. 6, the second purge gas injection nozzle 24 configures and is compared than 5 downstream of processor in carry direction The transport path of glass substrate 2 configures against the top.The second purge gas injection nozzle 24 can be towards the upstream of carry direction Side spray penetrates the second purge gas 23, so that forming the second purging along the direction opposite with carry direction in the 13a of gap The flowing of gas 23.The flowing of second purge gas 23 can be formed on the entire width of gap 13a.By glass substrate 2 Rearmost part 2e carried in processing space 13 when, using the pressure of the second purge gas 23 be intended to from the side rearmost part 2e flow into The processing gas 4 of gap 13a rushes to the upstream side of carry direction, can prevent processing gas using second purge gas 23 4 inflow to gap 13a.Then, the roughening of the upper surface 2b of glass substrate 2 is avoided.It should be noted that in this implementation In mode, in the same manner as the first purge gas 6, clean dry air is used as the second purge gas 23.
After the injection that stopped the first purge gas 6, the rearmost part 2e of the glass substrate 2 in carrying will enter Start to spray the second purge gas 23 before processing space 13.In addition, as shown in fig. 7, glass substrate 2 in carrying it is last Portion 2e stops the second purge gas 23 of injection after being just detached from from processing space 13.Here, about progress purge gas 23 The beginning of injection and the opportunity of stopping, by being sprayed using above-mentioned detection unit or than the second purge gas in carry direction New detection unit (illustration omitted) such as sensor of 24 downstream of nozzle configuration etc. is logical to the rearmost part 2e's of glass substrate 2 It crosses and is detected to determine.
Second purge gas injection nozzle 24 is only configured from the first above-mentioned purge gas injection nozzle 7, posture is different, It is able to use the nozzle with structure identical with the first purge gas injection nozzle 7.It is sprayed accordingly, with respect to the second purge gas The structure of nozzle 24, the repetitive description thereof will be omitted.
As shown in Figure 1, chamber 8 is formed as the shape of rectangular-shape.The chamber 8 has: in addition to it is above-mentioned move in mouthful 8aa and Move out the main body 8a that ceiling hole 8ac is also formed with except mouthful 8ab;And the lid 8b for blocking ceiling hole 8ac.
Move in mouthful 8aa and move out the sidewall portion 8ad that mouthful 8ab is formed in main body 8a, and be formed as along width direction and In the flat opening of strip.It (is in the present embodiment three that ceiling hole 8ac is formed with multiple in the ceiling portion 8ae of main body 8a It is a).The opening that lid 8b can block ceiling hole 8ac is whole, further, it is possible to install to main body 8a and unload from main body 8a.By This, opens wide ceiling hole 8ac and unloading lid 8b from main body 8a, so as to be handled via ceiling hole 8ac The operations such as adjusting, maintenance, the inspection of device 5.
First illusory processor 10 has: in the cabinet of the rectangular-shape of the lower section configuration of the transport path of glass substrate 2 10a;The top plate 10b of the top of transport path is configured in the mode opposed with cabinet 10a;And for preventing because of top plate 10b Self weight caused by flexure the H profile steel 10c as stiffener.In being formed between each other for cabinet 10a and top plate 10b Gap 21 for passing through glass substrate 2.First illusory processor 10 is as avoiding being flowed into chamber from moving out a mouthful 8ab Air-flow in 8 reaches processing space 13 and causes dysgenic windproof component to function etching process.Here, in order to make Effectively functioned for windproof component, the length along the first illusory processor 10 of carry direction be preferably 50mm with On, more preferably 100mm or more.
It is formed in the direction of the width in the upper end of cabinet 10a in the opening 10aa of the rectangle of strip.On the other hand, in case The bottom of body 10a is connected with and is configured at the exhaust pipe 22 of the connection of the cleaning dust collect plant (illustration omitted) outside chamber 8.As a result, For the processing gas for being driven and flowed out to out of processing space 13 by the lower surface 2a of glass substrate 2 downstream side of carry direction 4, after the first illusory processor 10 can be such that the processing gas 4 is attracted by opening 10aa by exhaust pipe 22, collect to cleaning The discharge of dirt device.Top plate 10b is single plate body (overlooking the plate body in rectangle), is had and by the glass substrate in gap 21 2 upper surface 2b opposed flat surface.H profile steel 10c is set as extending in the width direction on top plate 10b.
First illusory processor 10 has identical with processor 5 from the direction along carry direction Shape, also, configured in a manner of seeming Chong Die with processor 5.That is, at the illusory place the main part 5a of processor 5 and first Manage the mutual of the cabinet 10a of device 10, width dimensions and identical along the size of up and down direction.Similarly, in (A) processor The illusory processor 10 of H profile steel 5c and first of the top plate 10b of the illusory processor 10 of 5 top plate portion 5b and first, (B) processor 5 H profile steel 10c, (C) processor 5 processing space 13 and the first illusory processor 10 these (A)~(C) of gap 21 each group That closes mutual, width dimensions and also identical along the size of up and down direction.
Second illusory processor 11 other than (1) as shown below, (2) this two o'clock, have with it is above-mentioned first illusory The identical structure of processor 10.Therefore, in Fig. 1, by the identical label mark of the label marked with the first illusory processor 10 It infuses in the second illusory processor 11, is omitted in repeat description between two processors 10,11 as a result,.(1) configuration and the first void If the different this point of processor 10.(2) this point is functioned as windproof component, which is used to avoid not from moving out Mouthful 8ab and reach processing space 13 from the air-flow that mouthful 8aa is flowed into chamber 8 is moved in and etching process caused dysgenic Situation.It should be noted that the second illusory processor 11 is in the same manner as the first illusory processor 10, from along carry direction In the case that direction is observed, there is shape identical with processor 5, also, match in a manner of seeming Chong Die with processor 5 It sets.
Nozzle 12 is attracted to be installed on the ceiling portion 8ae of chamber 8, suction port 12a is connected with space 9.Suction port 12a exists 10 downstream of processor configuration more illusory than first in carry direction, and configure the downstream side of the carry direction in space 9 Portion.Nozzle 12 is attracted to connect with cleaning dust collect plant (illustration omitted) of the configuration outside chamber 8, the product that can will be attracted To cleaning dust collect plant discharge.It should be noted that suction port 12a is not limited to configuration identical with present embodiment, compare glass The transport path of glass substrate 2 configures against the top.However, being inhaled due to having to the product generated in an etching process Draw and by the effect that it is discharged to outside chamber 8, therefore, even if being inhaled using the configuration different from present embodiment Draw mouthful 12a it is also preferred that configuring in carry direction than 5 downstream of processor.
Hereinafter, the glass substrate of the embodiments of the present invention for the manufacturing device 1 for having used above-mentioned glass substrate Manufacturing method be illustrated.
Firstly, carry using handling unit 3 to glass substrate 2, glass thus is moved in from moving in mouthful 8aa into chamber 8 Glass substrate 2.It should be noted that in the present embodiment, with from move in mouthful 8aa until moving out mouthful 8ab along transport road Pair on the basis of the distance of diameter, by the glass substrate 2 along the whole length of transport path than the distance as etching process As.In addition, in the present embodiment, being carried with fixed transporting velocity to glass substrate 2.
Then, make the glass substrate 2 after moving in by being configured at the second illusory place moved between mouthful 8aa and processor 5 Manage the gap 21 of device 11.It should be noted that from the lower surface 2a moved in after mouthful 8aa is flowed into chamber 8 along glass substrate 2 The exhaust pipe that the gas come to the flowing of the downstream side of carry direction is connected with the bottom of the cabinet 10a of the second illusory processor 11 22 attract.On this basis, also by functioning the second illusory processor 11 as windproof component, to prevent from moving in Mouth 8aa is flowed into the processing space 13 that the gas in chamber 8 reaches processor 5.
Then, make the glass substrate 2 after the gap 21 of the second illusory processor 11 passes through empty by the processing of processor 5 Between 13.At this point, spraying the first purge gas 6 before the fore head 2f of glass substrate 2 will enter processing space 13.So Afterwards, in the lower surface side 2a by the glass substrate 2 in processing space 13, the processing gas 4 supplied using each air supply opening 14 is right Lower surface 2a implements etching process, while utilizing each exhaust outlet 15 of upstream side end and end of downstream side from processing space 13 Processing gas 4 is discharged.On the other hand, in the upper surface side 2b by the glass substrate 2 in processing space 13, between being formed in The flowing of the first purge gas 6 of gap 13a, to prevent the processing for being intended to flow into from the fore head 2f sideshake 13a of glass substrate 2 The etching process that gas 4 implements upper surface 2b.In addition, the product generated in an etching process be attracted nozzle 12 attract and It is discharged to outside chamber 8.Stop the first purge gas of injection before the rearmost part 2e of glass substrate 2 will enter processing space 13 6。
Here, in the present embodiment, using before the rearmost part 2e of glass substrate 2 will enter processing space 13 Stop the mode of the first purge gas 6 of injection, but not limited to this.As long as the fore head 2f in glass substrate 2 is empty from processing Between 13 be detached from after, can also using than glass substrate 2 rearmost part 2e will enter processing space 13 before be located further forward Ground stops the mode of the first purge gas 6 of injection, can also be using the fore head 2f in glass substrate 2 just from processing space 13 Stop the mode of the first purge gas 6 of injection after being detached from.
When stopping spraying the first purge gas 6, start to spray the second purge gas 23 instead of the first purge gas 6. Concomitantly, in the upper surface side 2b by the glass substrate 2 in processing space 13, by be formed in gap 13a second The flowing of purge gas 23, to prevent the processing gas 4 for being intended to flow into from the rearmost part 2e sideshake 13a of glass substrate 2 to upper The etching process that surface 2b is implemented.On the other hand, in the lower surface side 2a by the glass substrate 2 in processing space 13, immediately Using each air supply opening 14 supply processing gas 4 to lower surface 2a implement etching process, while using upstream side end and under Processing gas 4 is discharged from processing space 13 in each exhaust outlet 15 for swimming side end.Glass substrate 2 rearmost part 2e just from processing Space 13 stops the second purge gas 23 of injection after being detached from.
Here, in the present embodiment, using before the rearmost part 2e of glass substrate 2 will enter processing space 13 Start to spray the second purge gas 23 and spray the mode of the second purge gas 23 from stopping after the disengaging of processing space 13 just, But not limited to this.At least at the time point for entering processing space 13 from the rearmost part 2e of glass substrate 2 to disengaging processing space The second purge gas 23 is sprayed during until 13 time point.
In addition, in the present embodiment, having started the second purge gass after the injection of the first purge gas 6 just stops The injection of body 23, but not limited to this.After the stipulated time can also being have passed through after the injection of the first purge gas 6 stopping, Start to spray the second purge gas 23.Thereby, it is possible to prevent the first purge gas 6 and the second purge gas 23 in processing space 13 It inside collides and causes in 13 interior air-flow disorder of processing space.In addition, can also save the first purge gas 6 and the second purging The usage amount of gas 23.It should be noted that thinking that the first purge gas 6 and the second purge gas 23 also act as prevents processing gas Body 4 is surrounded to from the lower surface side 2a of glass substrate 2 via carry direction side (along the width direction end of glass substrate 2) The effect of the upper surface side 2b.From the mutual collision of the gas that prevents in processing space 13 while preventing aforementioned circular sight as a result, Point sets out, and it is preferred to stop the stipulated time until the injection of the second purge gas 23 since the injection of the first purge gas 6 It is short as far as possible, preferably 0.5 second~2 seconds, more preferably 0.5 second~1 second.On the other hand, from the first purge gas 6 and second of saving From the perspective of the usage amount of purge gas 23, the stipulated time above-mentioned is preferably long as far as possible, will preferably be ensured to be the stipulated time, The fore head 2f of glass substrate 2 stops the first purge gas 6 of injection after being just detached from from processing space 13, in glass substrate 2 Rearmost part 2e starts to spray the second purge gas 23 before will entering processing space 13.
In addition, in the present embodiment, using before the rearmost part 2e of glass substrate 2 will enter processing space 13 Stop the mode of the first purge gas 6 of injection, and uses the injecting time of the first purge gas 6 than the second purge gas 23 The long mode of injecting time, but not limited to this.It can also be just detached from from processing space 13 in the fore head 2f of glass substrate 2 Stop the first purge gas 6 of injection later, and then starts to spray the second purge gas 23, make the second purge gas 23 as a result, Injecting time it is longer than the injecting time of the first purge gas 6.Suitably ensure the stipulated time above-mentioned alternatively, it is also possible to pass through, And the injecting time of the first purge gas 6 and the injecting time of the second purge gas 23 is made to become the identical time.In addition, can also While ensuring the stipulated time above-mentioned, to make the injecting time of the first purge gas 6 than the injection of the second purge gas 23 Time is long, the injecting time of the first purge gas 6 can be kept shorter than the injecting time of the second purge gas 23 on the contrary.
Then, the glass substrate 2 after can also making the etching process of the processing space for having passed through processor 5 13 is by locating Reason device 5 and the gap 21 for moving out the illusory processor 10 of first configured between mouthful 8ab.It should be noted that from move out mouthful 8ab to Flow into chamber 8 and along the lower surface 2a of glass substrate 2 flow to the gas of the upstream side of carry direction by with the first illusory place Manage the connected attraction of exhaust pipe 22 in the bottom of the cabinet 10a of device 10.In addition, by making the first illusory processor 10 as windproof structure Part functions, to prevent from the processing space 13 for moving out the gas arrival processor 5 that mouthful 8ab is flowed into chamber 8.Separately Outside, it using exhaust pipe 22, is flowed out under carry direction out of processing space 13 to being driven by the lower surface 2a of glass substrate 2 The processing gas 4 of trip side attract and be discharged to outside chamber 8.
Finally, by by the glass substrate 2 behind the gap 21 of the first illusory processor 10 from moving out mouthful 8ab to outside chamber 8 It moves out.Then, the glass substrate 2 that etching process is implemented to lower surface 2a is obtained.By the above, embodiments of the present invention The manufacturing method of glass substrate is completed.
Hereinafter, main function brought by manufacturing method to the glass substrate of embodiments of the present invention, effect carry out Explanation.
In the method, before the rearmost part 2e of glass substrate 2 enters processing space 13, stop the first purge gass of injection Body 6.It necessarily prevents from being blown afloat after rearmost part 2e enters processing space 13 by the pressure of the first purge gas 6 as a result, Process gases 4 flows into the occurrence of such from the rear lateral gap 13a of rearmost part 2e.As a result, rearmost part 2e's is upper Surface 2b will not be undeservedly roughened, and the decline of the quality of glass substrate 2 can be prevented.
Description of symbols:
2 glass substrates;
The lower surface 2a;
2e rearmost part;
2f fore head;
4 processing gas;
5a main part (lower part composition body);
5b top plate portion (top composition body);
6 first purge gas;
13 processing spaces;
The gap 13a;
14 air supply openings;
23 second purge gas.

Claims (5)

1. a kind of manufacturing method of glass substrate is carrying glass substrate to lay flat posture along carry direction, so that the glass Glass substrate by during top arranged opposite constitutes body and lower part constitutes the processing space of body formed between each other, The processing gas of the processing space is supplied to using the air supply opening that body has is constituted from the lower part come to the glass substrate Lower surface implement etching process when, towards the carry direction downstream side spray the first purge gas so that in shape The position for entering the processing space in glass substrate described in Cheng Yu and the top constitute the gap between body, form edge The flowing of first purge gas of the carry direction, which is characterized in that
Before the rearmost part of the glass substrate enters the processing space, stop spraying first purge gas.
2. the manufacturing method of glass substrate according to claim 1, which is characterized in that
Before the fore head of the glass substrate enters the processing space, start to spray first purge gas.
3. the manufacturing method of glass substrate according to claim 1 or 2, which is characterized in that
Implement etching in the lower surface of the glass substrate longer than the processing space to the length along the carry direction When processing,
The glass substrate fore head after processing space disengaging, stop spraying first purge gas.
4. the manufacturing method of glass substrate according to any one of claim 1 to 3, which is characterized in that
At time point for entering the processing space from the rearmost part of the glass substrate to being detached from from the processing space During until time point,
The second purge gas is sprayed towards the upstream side of the carry direction, is removed so that being formed in the gap along with described Transport the flowing of second purge gas in contrary direction.
5. the manufacturing method of glass substrate according to claim 4, which is characterized in that
Clean dry air is used as first purge gas and second purge gas.
CN201780059814.4A 2016-11-16 2017-10-30 Method for manufacturing glass substrate Active CN109790064B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016223258 2016-11-16
JP2016-223258 2016-11-16
PCT/JP2017/039032 WO2018092556A1 (en) 2016-11-16 2017-10-30 Method for manufacturing glass substrate

Publications (2)

Publication Number Publication Date
CN109790064A true CN109790064A (en) 2019-05-21
CN109790064B CN109790064B (en) 2022-01-07

Family

ID=62145308

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780059814.4A Active CN109790064B (en) 2016-11-16 2017-10-30 Method for manufacturing glass substrate

Country Status (5)

Country Link
JP (1) JP6905672B2 (en)
KR (1) KR102373650B1 (en)
CN (1) CN109790064B (en)
TW (1) TWI741062B (en)
WO (1) WO2018092556A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7290103B2 (en) * 2019-11-19 2023-06-13 日本電気硝子株式会社 Glass plate manufacturing apparatus and manufacturing method thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003012836A1 (en) * 2001-07-31 2003-02-13 Sony Corporation Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device
CN1482666A (en) * 2002-09-12 2004-03-17 株式会社日立高新技术 Method and apparatus for forming damascene structure, and damascene structure
CN1780935A (en) * 2003-07-16 2006-05-31 柯尼卡美能达控股株式会社 Method for forming thin film and base having thin film formed by such method
CN1873950A (en) * 2005-05-31 2006-12-06 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
CN101489661A (en) * 2006-05-19 2009-07-22 乔治洛德方法研究和开发液化空气有限公司 Systems and methods for reclaiming process fluids in a processing environment
CN101781091A (en) * 2009-01-16 2010-07-21 中国南玻集团股份有限公司 Device for bearing transparent conductive film glass during thinning single surface and thinning method for transparent conductive film glass
US20100319615A1 (en) * 2009-06-23 2010-12-23 Tokyo Electron Limited Liquid processing apparatus
JP2012191001A (en) * 2011-03-10 2012-10-04 Sekisui Chem Co Ltd Surface treatment method and device
CN102770944A (en) * 2010-02-25 2012-11-07 积水化学工业株式会社 Etching method and etching apparatus
CN203382660U (en) * 2013-06-27 2014-01-08 彩虹显示器件股份有限公司 Glass surface etching device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005138010A (en) * 2003-11-05 2005-06-02 Sekisui Chem Co Ltd Atmospheric pressure plasma treatment apparatus and resist peeling device
JP6048817B2 (en) * 2012-12-27 2016-12-21 日本電気硝子株式会社 Sheet glass surface treatment apparatus and surface treatment method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003012836A1 (en) * 2001-07-31 2003-02-13 Sony Corporation Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device
CN1482666A (en) * 2002-09-12 2004-03-17 株式会社日立高新技术 Method and apparatus for forming damascene structure, and damascene structure
CN1780935A (en) * 2003-07-16 2006-05-31 柯尼卡美能达控股株式会社 Method for forming thin film and base having thin film formed by such method
CN1873950A (en) * 2005-05-31 2006-12-06 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
CN101489661A (en) * 2006-05-19 2009-07-22 乔治洛德方法研究和开发液化空气有限公司 Systems and methods for reclaiming process fluids in a processing environment
CN101781091A (en) * 2009-01-16 2010-07-21 中国南玻集团股份有限公司 Device for bearing transparent conductive film glass during thinning single surface and thinning method for transparent conductive film glass
US20100319615A1 (en) * 2009-06-23 2010-12-23 Tokyo Electron Limited Liquid processing apparatus
CN102770944A (en) * 2010-02-25 2012-11-07 积水化学工业株式会社 Etching method and etching apparatus
JP2012191001A (en) * 2011-03-10 2012-10-04 Sekisui Chem Co Ltd Surface treatment method and device
CN203382660U (en) * 2013-06-27 2014-01-08 彩虹显示器件股份有限公司 Glass surface etching device

Also Published As

Publication number Publication date
JPWO2018092556A1 (en) 2019-10-17
TW201830514A (en) 2018-08-16
JP6905672B2 (en) 2021-07-21
WO2018092556A1 (en) 2018-05-24
KR102373650B1 (en) 2022-03-14
TWI741062B (en) 2021-10-01
KR20190078558A (en) 2019-07-04
CN109790064B (en) 2022-01-07

Similar Documents

Publication Publication Date Title
KR100770503B1 (en) Substrate processing apparatus
JP4847244B2 (en) Etching device
CN109790064A (en) The manufacturing method of glass substrate
CN109843822A (en) The manufacturing method of glass substrate
JP6076606B2 (en) Levitation conveyance device and levitation conveyance method
CN109843821A (en) The manufacturing method of glass substrate
CN109890772A (en) The manufacturing method of glass substrate
JP6641663B2 (en) Method for manufacturing glass plate and apparatus for manufacturing the same
KR101270989B1 (en) Substrate coater apparatus which prevents inhomogenoeous coated layer due to temperature difference
TWI821799B (en) Substrate processing equipment
KR101267464B1 (en) Apparatus for jetting fluid
JP2011194280A (en) Substrate washing apparatus
CN105185726A (en) Substrate treatment device, substrate treatment method, substrate manufacture device and substrate manufacture method
JP6110111B2 (en) Dust remover
JP6110111B6 (en) Dust remover
KR20160144143A (en) Substrate processing apparatus
JPH11297598A (en) Substrate treatment apparatus
KR20180032996A (en) Air cutting apparatus
TW201609512A (en) Conveyance rail and flotation conveying device
JP2013067846A (en) Substrate processing apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant