TWI735698B - Manufacturing method of glass substrate - Google Patents

Manufacturing method of glass substrate Download PDF

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TWI735698B
TWI735698B TW106138561A TW106138561A TWI735698B TW I735698 B TWI735698 B TW I735698B TW 106138561 A TW106138561 A TW 106138561A TW 106138561 A TW106138561 A TW 106138561A TW I735698 B TWI735698 B TW I735698B
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glass substrate
air supply
port
processing space
gas
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TW106138561A
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TW201825978A (en
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山本好晴
中弘樹
大野和宏
伊澤誠一
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日商日本電氣硝子股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)

Abstract

一種玻璃基板之製造方法,係包含有:一邊將玻璃基板2以平放姿勢朝搬送方向搬送,使其通過形成於使對向配置的本體部(5a)與頂板部(5b)之相互間的處理空間(13),一邊使用從設在本體部(5a)的供氣口(14)朝處理空間(13)供氣,且藉由分別設在本體部(5a)之搬送方向的上游側端部及下游側端部之排氣口(15)從處理空間(13)排氣的處理氣體(4),對玻璃基板(2)的下表面(2a)實施蝕刻處理之製程;其特徵係:關於沿著搬送方向之距離,比起上游側端部的排氣口(15)與最上游側的供氣口(14)之相互間距離(D1),下游側端部的排氣口(15)與最下游側的供氣口(14)之相互間距離(D2)較長。 A method of manufacturing a glass substrate includes: while conveying the glass substrate 2 in a horizontal position in a conveying direction, passing it through a body part (5a) and a top plate part (5b) that are arranged facing each other. The processing space (13) is used to supply air from the air supply port (14) provided in the main body (5a) to the processing space (13), and is provided at the upstream end of the main body (5a) in the conveying direction. The processing gas (4) exhausted from the processing space (13) at the exhaust port (15) at the downstream end and the downstream side end is a process in which the lower surface (2a) of the glass substrate (2) is etched; its characteristics are: Regarding the distance along the conveying direction, compared to the distance (D1) between the exhaust port (15) at the upstream end and the most upstream air supply port (14) (D1), the exhaust port (15) at the downstream end The distance (D2) between) and the air supply port (14) on the most downstream side is longer.

Description

玻璃基板之製造方法Manufacturing method of glass substrate

[0001] 本發明係有關包含一邊以平放姿勢搬送玻璃基板,一邊利用氟化氫等處理氣體對玻璃基板的下表面實施蝕刻處理的製程之玻璃基板之製造方法。[0001] The present invention relates to a method for manufacturing a glass substrate including a process in which the lower surface of the glass substrate is etched with a processing gas such as hydrogen fluoride while the glass substrate is conveyed in a horizontal position.

[0002] 以周知之方式,玻璃基板,可以被採用於液晶顯示器、電漿顯示器、有機電致發光顯示器、場發射顯示器等所代表的平板顯示器、或智慧型手機、平板型電腦等行動終端之多種多樣的電子裝置。   [0003] 於該玻璃基板之製造製程,有發生起因於靜電之問題。舉一例,在載置於對玻璃基板應該實施指定的處理之支撐台上時,有因靜電導致玻璃基板黏貼於支撐台之場合。這樣的場合,在從支撐台抬起已結束處理的玻璃基板時,有造成玻璃基板破損之情況。   [0004] 於是,作為這類的問題的對策,已知藉由在實施指定的處理之前,利用氟化氫等處理氣體對玻璃基板的表面實施蝕刻處理,使表面粗糙化,來迴避起因於靜電的問題發生之手法。於是,在專利文獻1,揭示供對玻璃基板的表面實施蝕刻處理用之手法之一例。   [0005] 於該文獻所揭示之手法,係一邊以平放姿勢搬送玻璃基板,一邊利用配置於其搬送路徑上的處理器(於相同文獻,為表面處理裝置)供給的處理氣體,對玻璃基板的下表面實施蝕刻處理。   [0006] 相同手法所用的處理器,係具備於上下挾著玻璃基板的搬送路徑並相對向之上部構成體與下部構成體(於相同文獻,為一對間隙形成構件),在兩構成體的相互間形成供實施蝕刻處理用之處理空間(於相同文獻,為間隙)。下部構成體,係具備供對處理空間供給處理氣體用之供氣口、與供從處理空間排出處理氣體用之排氣口。排氣口,係分別設在下部構成體之搬送方向的上游側端部及下游側端部。相對於此,供氣口係設在兩排氣口的中間位置。   [0007] 接著,於相同手法,從供氣口對處理空間供給處理氣體,且邊利用排氣口從處理空間排出處理氣體,邊藉由對伴隨搬送而通過處理空間的玻璃基板的下表面實施蝕刻處理,使下表面粗糙化。 [先前技術文獻] [專利文獻]   [0008] [專利文獻1] 日本特開2014-125414號公報[0002] In a well-known manner, glass substrates can be used in flat panel displays represented by liquid crystal displays, plasma displays, organic electroluminescence displays, field emission displays, or mobile terminals such as smart phones and tablet computers. A variety of electronic devices.  [0003] During the manufacturing process of the glass substrate, there was a problem caused by static electricity. For example, when the glass substrate is placed on a support table where the specified treatment should be performed on the glass substrate, there are occasions where the glass substrate sticks to the support table due to static electricity. In such a case, when the glass substrate that has been processed is lifted from the support table, the glass substrate may be damaged. [0004] Therefore, as a countermeasure to this type of problem, it is known that the surface of the glass substrate is etched with a processing gas such as hydrogen fluoride before the specified processing is performed to roughen the surface and avoid the problem caused by static electricity. The way it happened. Therefore, Patent Document 1 discloses an example of a technique for performing an etching treatment on the surface of a glass substrate. [0005] The method disclosed in this document is to transport the glass substrate in a flat position while using a processing gas supplied from a processor (surface treatment device in the same document) disposed on the transport path to treat the glass substrate. The lower surface is etched. [0006] The processor used in the same technique is equipped with a conveying path that sandwiches the glass substrate up and down and opposes the upper structure and the lower structure (in the same document, a pair of gap forming members). A processing space (in the same document, a gap) for etching processing is formed between each other. The lower structure is provided with a gas supply port for supplying processing gas to the processing space and an exhaust port for discharging processing gas from the processing space. The exhaust ports are respectively provided at the upstream end and the downstream end in the conveying direction of the lower structure. In contrast, the air supply port is located in the middle of the two exhaust ports. [0007] Next, in the same manner, the processing gas is supplied from the gas supply port to the processing space, and the processing gas is discharged from the processing space through the exhaust port, and the lower surface of the glass substrate that passes through the processing space along with the transportation is performed. Etching treatment roughens the lower surface. [Prior Art Document] [Patent Document]   [0008] [Patent Document 1] JP 2014-125414 A

[0009] 然而,在利用上述手法實施蝕刻處理之場合,會發生下述之類的應該解決的問題。 [0009] However, when the etching process is performed by the above-mentioned method, the following problems that should be solved may occur.

亦即,在玻璃基板通過處理空間時,從供氣口對處理空間被供給的處理氣體,容易被玻璃基板拖曳而從搬送方向的上游側流向下游側。因此,被供給的處理氣體幾乎不會流到上游側端部的排氣口側、而流到下游側端部的排氣口側之後,就從該下游側端部的排氣口被排氣。因為這樣,現狀是,處理空間中對玻璃基板的下表面實施蝕刻處理之可能的領域,實質上被限制僅在從供氣口到下游側端部的排氣口為止的領域,處理空間全長中有約略一半長的領域無法利用於蝕刻處理。因此,有對玻璃基板的下表面進行充分的蝕刻處理是不可能,要使下表面粗糙化到期望程度變得困難之場合。 That is, when the glass substrate passes through the processing space, the processing gas supplied from the air supply port to the processing space is easily dragged by the glass substrate and flows from the upstream side to the downstream side in the conveying direction. Therefore, the supplied processing gas hardly flows to the exhaust port side at the upstream end, but after it flows to the exhaust port side at the downstream end, it is exhausted from the exhaust port at the downstream end. . Because of this, the current situation is that the area in the processing space where the lower surface of the glass substrate can be etched is essentially limited to the area from the air supply port to the exhaust port at the downstream end, which is the entire length of the processing space. Approximately half of the area cannot be used for etching. Therefore, it is impossible to perform sufficient etching treatment on the lower surface of the glass substrate, and it is sometimes difficult to roughen the lower surface to the desired degree.

有鑑於上述情事作成之本發明,係在一邊以平放姿勢搬送玻璃基板,一邊利用處理氣體對玻璃基板的下表面實施蝕刻處理時,以使其可確實實行作為技術上的課題。 The present invention made in view of the above circumstances is a technical problem when the lower surface of the glass substrate is etched with a processing gas while the glass substrate is conveyed in a horizontal position, so that it can be implemented reliably.

為了解決上述課題被提出之本發明,係包含有:一邊將玻璃基板以平放姿勢朝搬送方向搬送,使其通過形成於使對向配置的上部構成體與下部構成體之相互間的處理空間,一邊使用從設在下部構成體的供氣口朝處理空間供氣,且藉由分別設在下部構成體之搬送方向的上游側端部及下游側端部之排氣口從處理空間排氣的處理氣 體,對玻璃基板的下表面實施蝕刻處理之製程之玻璃基板之製造方法;其特徵係:關於沿著搬送方向之距離,比起上游側端部的排氣口與最上游側的供氣口之相互間距離,下游側端部的排氣口與最下游側的供氣口之相互間距離較長。 The present invention, proposed to solve the above-mentioned problems, includes: while conveying the glass substrate in a horizontal position in the conveying direction, passing it through a processing space formed between an upper structure and a lower structure that are arranged facing each other , While using the air supply port provided in the lower structure to supply air to the processing space, and to exhaust air from the processing space through the exhaust ports respectively provided at the upstream end and the downstream end in the conveying direction of the lower structure Processing gas Body, a method for manufacturing glass substrates in which the lower surface of the glass substrate is etched; the characteristic is that the distance along the conveying direction is compared to the exhaust port at the upstream end and the air supply port at the most upstream side The mutual distance between the exhaust port at the downstream end and the air supply port at the most downstream side is relatively long.

在該方法,使處理空間中從最上游側的供氣口到下游側端部的排氣口為止的領域,成為可以實質地對玻璃基板的下表面實施蝕刻處理之領域。根據此點,關於沿著搬送方向的距離,比起上游側端部的排氣口與最上游側的供氣口之相互間距離,如果將下游側端部的排氣口與最下游側的供氣口之相互間距離拉長,則可以得到如下述的效果。亦即,如此作法,由於在處理空間內,將最上游側的供氣口配置在比兩排氣口的中間位置還偏靠上游側,只該供氣口偏靠上游側之部分,就能把可以對玻璃基板的下表面實施蝕刻處理的領域拉長。也就是,可以使處理氣體與玻璃基板的下表面之反應時間拉長。結果,能對玻璃基板的下表面確實地實施蝕刻處理。 In this method, the area from the air supply port on the most upstream side to the air outlet port on the downstream side in the processing space becomes an area where the lower surface of the glass substrate can be substantially etched. Based on this point, the distance along the conveying direction is compared with the distance between the exhaust port at the upstream end and the air supply port at the most upstream side. If the distance between the air supply ports is lengthened, the following effects can be obtained. That is, in this way, since the most upstream air supply port is arranged on the upstream side than the middle position of the two exhaust ports in the processing space, only the part of the air supply port on the upstream side can be Extend the area where the lower surface of the glass substrate can be etched. That is, the reaction time between the processing gas and the lower surface of the glass substrate can be lengthened. As a result, it is possible to reliably perform the etching treatment on the lower surface of the glass substrate.

在上述的方法,最好是將供氣口形成為沿與玻璃基板的搬送方向正交之寬度方向呈長條狀的狹縫狀。 In the above method, it is preferable to form the air supply port into a slit shape elongated in the width direction orthogonal to the conveying direction of the glass substrate.

如此作法,可在對處理空間、沿著寬度方向均等地供給處理氣體上成為有利。結果,可對玻璃基板的下表面、容易沿寬度方向均勻地實施蝕刻處理。 This method can be advantageous in that the processing gas is evenly supplied to the processing space in the width direction. As a result, the lower surface of the glass substrate can be easily etched uniformly in the width direction.

在上述的方法,最好是沿著搬送方向配置複數個供氣口,從各供氣口供給處理氣體。 In the above method, it is preferable to arrange a plurality of gas supply ports along the conveying direction and supply the processing gas from each gas supply port.

[0017] 如此作法,關於處理空間內的處理氣體,由於可容易迴避發生沿著寬度方向濃度不均勻之情事,而在對玻璃基板的下表面、沿寬度方向均勻地實施蝕刻處理上更為有利。   [0018] 在上述的方法,最好是使複數個供氣口中最下游側的供氣口所供給的處理氣體的流量為最多。   [0019] 如此作法,能更有效果地對玻璃基板的下表面實施蝕刻處理。 [0017] In this way, regarding the processing gas in the processing space, since the occurrence of uneven concentration along the width direction can be easily avoided, it is more advantageous to uniformly etch the lower surface of the glass substrate in the width direction. .  [0018] In the above method, it is preferable to maximize the flow rate of the processing gas supplied from the gas supply port on the most downstream side among the plurality of gas supply ports.  [0019] In this way, the lower surface of the glass substrate can be etched more effectively.

[0020] 根據本發明,使一邊以平放姿勢搬送玻璃基板,一邊利用處理氣體對玻璃基板的下表面實施蝕刻處理時,可以確實實行。[0020] According to the present invention, when the glass substrate is transported in a horizontal position while etching the lower surface of the glass substrate with a processing gas, it can be performed reliably.

[0022] 以下,針對關於本發明實施型態的玻璃基板之製造方法,參照附圖並加以說明。首先,說明玻璃基板之製造方法所用的玻璃基板之製造裝置。   [0023] 於此,在以下的說明,將玻璃基板的搬送方向(於圖1為由右向左的方向)標記為「搬送方向」。此外,將正交於搬送方向的玻璃基板的寬度方向(於圖1為對著紙面鉛直的方向)標記為「寬度方向」,同時將沿著「寬度方向」的長度標記為「全幅」或「寬度尺寸」。另外,將對著玻璃基板的上下表面鉛直的方向標記為「上下方向」。   [0024] 如圖1所示,玻璃基板之製造裝置1,作為主要的構成要素而具備:供以平放姿勢水平地搬送玻璃基板2用之搬送手段3,供對著搬送中的玻璃基板2的下表面2a利用處理氣體4(於本實施型態為氟化氫)實施蝕刻處理用之處理器5,噴射供防止對玻璃基板2的上表面2b蝕刻處理用的沖洗氣體6之沖洗氣體噴射噴嘴7,具有玻璃基板2的搬入口8aa及搬出口8ab、且供防止處理氣體4從被形成在自身的內部的空間9朝外部漏出用之腔室8,在玻璃基板2的搬送路徑上被配置在處理器5與搬出口8ab之間之第一虛設處理器10、及被配置在處理器5與搬入口8aa之間之第二虛設處理器11,與供把處理氣體4與玻璃基板2的下表面2a之反應所發生之生成物抽吸並朝腔室8外排出用之抽吸噴嘴12。   [0025] 搬送手段3,係由被排列在玻璃基板2的搬送路徑上之複數個輥子3a構成。利用該複數個輥子3a,而可以沿著直線上延伸的搬送路徑搬送玻璃基板2。於沿著搬送方向相鄰的輥子3a的相互間,使玻璃基板2下表面2a的全幅呈露出來之狀態。藉由該露出來的下表面2a與處理氣體4反應,而實施蝕刻處理並粗糙化下表面2a的全幅。又,作為搬送手段3,也可以使用複數個輥子3a以外之物,只要可以在搬送中使玻璃基板2下表面2a的全幅露出來之物,也可以使用其他物。   [0026] 處理器5,係具備將玻璃基板2的搬送路徑在上下挾著並相對向之作為下部構成體之本體部5a、作為上部構成體之頂板部5b、與作為供防止因頂板部5b的自重造成的撓曲用之補強構件之H鋼5c。在本體部5a與頂板部5b之相互間,形成供對通過此的玻璃基板2實施蝕刻處理用之處理空間13。該處理空間13係被形成為扁平的空間。使處理空間13的寬度尺寸W1(參照圖2)、及沿著上下方向的厚度尺寸T1,分別大於玻璃基板2的全幅W2(參照圖2)、及玻璃基板2的厚度T2。   [0027] 於此,在玻璃基板2從處理空間13之外進入內部時,為了防止附隨於這並存在於玻璃基板2周圍的空氣等氣體流入處理空間13,使沿著搬送方向之處理空間13的長度尺寸L1,作成300mm~2000mm的範圍內為佳,在600mm~1000mm的範圍內更佳。又,從使沖洗氣體6適當噴射之觀點而言,上述的長度尺寸L1,最好是不同於本實施型態之態樣,比沿著玻璃基板2的搬送方向之長度還長。此外,處理空間13的厚度尺寸T1,最好是作成4mm~30mm之範圍內。再者,上述的長度尺寸L1與厚度尺寸T1之比率(長度尺寸L1/厚度尺寸T1)的數值,最好是設定在10~250之範圍內。   [0028] 本體部5a,係具有直方體狀的外形。該本體部5a,係具備供朝處理空間13噴射並供給處理氣體4用之供氣口14,供從處理空間13將處理氣體4抽吸並排氣用之排氣口15,與供加熱被供給到處理空間13的處理氣體4、及防止因處理氣體4造成的結露用之加熱器等加熱手段(省略圖示)。排氣口15,分別被配置在本體部5a之搬送方向的上游側端部與下游側端部。相對於此,供氣口14,在上游側端部的排氣口15與下游側端部的排氣口15之間,沿著搬送方向被配置複數個(於本實施型態為三個)。   [0029] 使複數個供氣口14中之搬送方向的最下游側的供氣口14,朝處理空間13供氣的處理氣體4的流量為最多,於本實施型態,相較於其他的供氣口14而供給二倍流量的處理氣體4。另一方面,在複數個供氣口14的相互間,使所供給的處理氣體4的濃度為相同。各供氣口14,係於沿著搬送方向相鄰的輥子3a的相互間與處理空間13接續。再者,分別使各供氣口14供給的處理氣體4的流量,每單位時間為一定。於此,關於沿著搬送方向的距離,使從最上游側的供氣口14到中央的供氣口14為止的距離L2、與從中央的供氣口14到最下游側的供氣口14為止的距離L3呈相等。又,於本實施型態,供氣口14被配置三個,但並不以此為限,可以是配置二個,抑或配置四個以上。   [0030] 各個上游側端部的排氣口15及下游側端部的排氣口15,係可以將從處理空間13抽吸的處理氣體4送入被形成在本體部5a內部的空間16。空間16,係與被接續在腔室8外配置的洗淨集塵裝置(省略圖示)之排氣管17相連。藉此,通過排氣口15而從處理空氣13被送入空間16的處理氣體4,之後,係通過排氣管17而從空間16朝洗淨集塵裝置被排氣。又,排氣管17,係接續在空間16之搬送方向的下游側端部。在上游側端部的排氣口15及下游側端部的排氣口15,也可以設置機構而個別地調節排氣的氣體(「氣體」,不僅是處理氣體4,也包含在從處理空間13之外被拉入內部之後,被抽吸到排氣口15的空氣等)之流量。另一方面,也可以藉由或是將排氣口15之與處理空間13連接的開口部閉塞,或是將構成排氣口15的部位自本體部5a拆卸、將與空間16連通的孔閉塞,而省略排氣口15。   [0031] 在此,相較於各供氣口14朝處理空間13供給的處理氣體4之流量,各排氣口15從處理空間13排氣之氣體流量是比較多。又,使各排氣口15排氣之氣體流量,每單位時間為一定。此外,關於沿著搬送方向的距離,比起上游側端部的排氣口15與最上游側的供氣口14之相互間距離D1,下游側端部的排氣口15與最下游側的供氣口14之相互間距離D2較長。相互間距離D2的長度,為相互間距離D1長度的1.2倍以上佳,1.5倍以上較佳,為2倍以上最佳。   [0032] 如圖2所示,供氣口14及排氣口15兩者,被形成沿寬度方向呈長條狀的狹縫狀。供氣口14之寬度尺寸,如同圖所示,可以作成比玻璃基板2的全幅稍微短,抑或與同圖不同,作成比玻璃基板2的全幅稍微長。另一方面,使排氣口15的寬度尺寸,比玻璃基板2的全幅稍微長。於此,為了作成容易沿著寬度方向均等地供給處理氣體4,供氣口14沿著搬送方向的開口長度S1最好是作成0.5mm~5mm之範圍內。又,排氣口15沿著搬送方向的開口長度,係比供氣口14沿著搬送方向的開口長度S1還長。再者,為了迴避因排氣口15形成的氣體抽吸妨礙圓滑的蝕刻處理的實行,從本體部5a的上游側端緣5aa到上游側端部的排氣口15為止之距離L4、與從下游側端緣5ab到下游側端部的排氣口15為止之距離L4,最好是共通並作成1mm~20mm之範圍內。   [0033] 如圖1所示,本體部5a中與處理空間13通過中的玻璃基板2的下表面2a對向之頂部,係由沿著搬送方向沒有間隙地並排的複數個單元(於本實施型態作成八個,包含後述的供氣單元18與連接單元19)構成。該等複數個單元,構成本體部5a的頂部,且構成上述的空間16的室頂部。   [0034] 在複數個單元之中,包含形成供氣口14的供氣單元18、與非形成供氣口14的連接單元19(於圖2,分別以粗線包圍供氣單元18與連接單元19)。於本實施型態,複數個單元並排之中,供氣單元18係並排在從搬送方向的上游側起第二個、第四個、及第六個位置。另一方面,連接單元19係並排在從搬送方向的上游側起第一個、第三個、第五個、第七個、及第八個位置。供氣單元18,係具備與供氣口14連結的供氣噴嘴18a,該供氣噴嘴18a,係與配置在腔室8外的處理氣體4的生成器(generator)(省略圖示)連接。連接單元19,係連接相鄰的供氣單元18相互間、及供氣單元18與排氣口15之間。   [0035] 於此,在從搬送方向的上游側起第一個位置(最上游側的位置)之連接單元19(19x),被配置固定於該位置。另一方面,在從上游側起第三個、第五個、第七個、及第八個位置之連接單元19,可以置換成供氣單元18、或者取代供氣口14而置換成被形成排氣口20a的後述的排氣單元20(於圖1,未使用排氣單元20)。此外,關於在從上游側起第二個、第四個、及第六個位置之供氣單元18,也可以置換成連接單元19、或者後述的排氣單元20。藉此,可以在供氣口14的數目、或變更搬送方向之供氣口14的位置添加變更。再者,假設在配置排氣單元20之場合,也可以從上游側端部及下游側端部之兩排氣口15,15以外進行處理氣體4排氣。以下,關於該等單元的置換,參照圖3a~圖3d加以說明。   [0036] 於圖3a~圖3c各圖,用粗線包圍顯示的供氣單元18、連接單元19、及排氣單元20,其沿著搬送方向的長度作成相互相等。藉此,在進行置換該等單元之場合,可以使隨置換而新配置的單元,與鄰接此的兩單元(於圖3a~圖3c各圖,圖示所鄰接的兩單元都是連接單元19之場合)沒有間隙地並排。再者,新配置的單元,可以在與所鄰接的兩單元上下方向沒有階差地並排。   [0037] 於此,如圖3a所示,供氣單元18之供氣口14的周邊領域14a,比起其他領域,係在上下方向位置於高位。藉此,於供氣口14的周邊領域14a,相比於其他領域,可以使之與通過處理空間13中的玻璃基板2的下表面2a之離間距離較短。在本實施型態,供氣口14周邊領域14a之與玻璃基板2下表面2a之離間距離,比起其他領域之與玻璃基板2下表面2a之離間距離呈一半的距離。於是,離間距離縮短這部分,使供氣口14的先端(處理氣體4的流出口)呈接近玻璃基板2下表面2a之狀態。此外,如圖3c所示,假設配置排氣單元20之場合,係呈在該排氣單元20被形成的排氣口20a與上述的空間16相連之狀態。藉此,通過排氣口20a而從處理空氣13被送入空間16的處理氣體4,之後,係通過排氣管17而從空間16朝洗淨集塵裝置被排氣。又,排氣口20a,與上游側端部的排氣口15及下游側端部的排氣口15同樣地,被形成沿寬度方向呈長條狀的狹縫狀。於此,如圖3d所示,供氣單元18之供氣口14的周邊領域14a,也可以作成與其他領域同一高度。   [0038] 如圖1所示,頂板部5b係作成單一的板體(俯視下為矩形狀的板體),具有與處理空間13通過中的玻璃基板2上表面2b相對向之平坦面。此外,頂板部5b,係內藏供防止因處理氣體4造成的結露用之加熱器等加熱手段(省略圖示)。H鋼5c,係於頂板部5b上在寬度方向延伸設置。再者,H鋼5c被設置複數個(於本實施型態為三個),該等複數個H鋼5c,係沿著搬送方向被等間隔地配置。   [0039] 沖洗氣體噴射噴嘴7,係配置在沿搬送方向比處理器5更上游側,且比玻璃基板2的搬送路徑還要上方。該沖洗氣體噴射噴嘴7,可以在玻璃基板2的進入處理空間13的部位與頂板部5b之間被形成之間隙13a,將沖洗氣體6向搬送方向的下游測噴射形成沖洗氣體6沿著搬送方向流動。沖洗氣體6的流動,係可以形成跨間隙13a的全幅。再者,沖洗氣體6,比起利用搬送手段3形成的玻璃基板2的搬送速度,沿著搬送方向被噴射的流速比較快。藉此,將欲流入間隙13a的處理氣體4、藉沖洗氣體6的壓力而趕到搬送方向的下游側,可以阻止往間隙13a的流入。於是,迴避玻璃基板2上表面2b的粗糙化。又,在本實施型態,使用壓縮乾燥空氣(CDA)作為沖洗氣體6。   [0040] 如圖4a所示,沖洗氣體6,係於搬送中的玻璃基板2的先頭部2f即將進入處理空間13之前開始噴射。再者,如圖4b所示,沖洗氣體6,係於搬送中的玻璃基板2的最後部2e即將進入處理空間13之前停止噴射。於此,於本實施型態,係以下述方式決定進行沖洗氣體6噴射的開始或停止之時機。首先,在沿搬送方向比沖洗氣體噴射噴嘴7更上游側,配置可以檢知玻璃基板2的先頭部2f或最後部2e通過之感應裝置等檢知手段(省略圖示)。在該檢知手段檢知玻璃基板2的先頭部2f通過時,根據玻璃基板2的搬送速度、與沿著從先頭部2f起到處理空間13的搬送路徑之距離,而決定開始沖洗氣體6噴射之時機。同樣地,在檢知手段檢知最後部2e通過時,根據搬送速度、與從最後部2e起到處理空間13之距離,而決定停止噴射之時機。   [0041] 如圖5所示,沖洗氣體噴射噴嘴7,係具備在寬度方向延伸的圓筒狀管材7a。在寬度方向空出間隔將複數個軟管7b對著該管材7a插入。由各軟管7b可以對管材7a內供給沖洗氣體6。此外,在管材7a內部,安裝沿寬度方向呈長條狀的板體7c,使從各軟管7b流入管材7a內之沖洗氣體6,形成在以迂迴之方式環繞板體7c之後,從與管材7a連結的噴射部7d噴射。在噴射部7d被形成之沖洗氣體6的噴射口,係形成沿寬度方向呈長條狀的狹縫狀。依噴射部7d所形成的沖洗氣體6的噴射角度θ(噴射部7d對玻璃基板2上表面2b的指向方向所傾斜之角度),可以於25°~70°的範圍內變更。此外,沖洗氣體噴射噴嘴7的姿勢,如圖5實線所示,或可以調節使噴射部7d指向處理空間13內,或如同圖虛線所示,調節使噴射部7d指向處理空間13外。   [0042] 如圖1所示,腔室8係作成直方體狀的外形。該腔室8,除了上述的搬入口8aa及搬出口8ab,還具備形成室頂孔8ac的本體8a、與供塞住室頂孔8ac用的蓋體8b。   [0043] 搬入口8aa及搬出口8ab,係在本體8a的側壁部8ad被形成,且形成為沿著寬度方向呈長條狀的扁平的開口。室頂孔8ac,係在本體8a的室頂部8ae形成複數個(於本實施型態為三個)。蓋體8b,係可以塞住室頂孔8ac的開口全體,且可以往本體8a安裝、及自本體8a拆卸。藉此,可以藉由將蓋體8b自本體8a拆卸而開放室頂孔8ac,而介著該室頂孔8ac進行處理器5的調節、保養、檢查等作業。   [0044] 第一虛設處理器10,係具備配置在玻璃基板2的搬送路徑的下方之直方體狀的箱體10a、配置在搬送路徑的上方成與箱體10a相對向之頂板10b、與作為供防止因頂板10b的自重造成的撓曲用之補強構件之H鋼10c。在箱體10a與頂板10b之相互間,形成供使玻璃基板2通過用之間隙21。第一虛設處理器10,係作為供迴避從搬出口8ab流入腔室8內之氣流到達處理空間13,對蝕刻處理帶來不良影響用之防風構件功能。於此,為了有效地作為防風構件之功能,沿著搬送方向之第一虛設處理器10的長度,為50mm以上佳,為100mm以上更佳。   [0045] 在箱體10a的上端,形成沿寬度方向呈長條狀的矩形狀的開口10aa。另一方面,在箱體10a的底部,係與被接續在腔室8外配置的洗淨集塵裝置(省略圖示)之排氣管22相連。藉此,第一虛設處理器10,關於被玻璃基板2下表面2a拖曳而從處理空間13內朝搬送方向下游側流出之處理氣體4,可以將該處理氣體4在通過開口10aa由排氣管22抽吸之後,朝洗淨集塵裝置排氣。頂板10b係作成單一的板體(俯視下為矩形狀的板體),具有與間隙21通過中的玻璃基板2上表面2b相對向之平坦面。H鋼10c,係於頂板10b上在寬度方向延伸設置。   [0046] 第一虛設處理器10,從沿著搬送方向的方向來看之場合,具有與處理器5相同的外形,且配置成看起來與處理器5重疊。換言之,於處理器5的本體部5a與第一虛設處理器10的箱體10a之相互間,可作成寬度尺寸、及沿著上下方向的尺寸為相同。同樣地,(A)處理器5的頂板部5b與第一虛設處理器10的頂板10b、(B)處理器5的H鋼5c與第一虛設處理器10的H鋼10c、(C)處理器5的處理空間13與第一虛設處理器10的間隙21,於該等(A)~(C)各組合之相互間,寬度尺寸、及沿著上下方向的尺寸都作成相同。   [0047] 第二虛設處理器11,除了下述所示之(1),(2)二點,係具備與上述第一虛設處理器10相同的構成。因而,藉由對第二虛設處理器11也附上與在圖1對第一虛設處理器10附上的相同圖號,省略於兩處理器10,11之間重複說明。(1)配置與第一虛設處理器10不同之點。(2)作為供迴避從搬入口8aa,而非從搬出口8ab,流入腔室8內之氣流到達處理空間13,對蝕刻處理帶來不良影響用之防風構件功能之點。又,第二虛設處理器11,與第一虛設處理器10同樣地,從沿著搬送方向的方向來看之場合,具有與處理器5相同的外形,且配置成看起來與處理器5重疊。   [0048] 抽吸噴嘴12,係安裝在腔室8的室頂部8ae,其抽吸口12a與空間9相連。該抽吸口12a,係配置在沿搬送方向之比第一虛設處理器10更下游側,且配置在空間9之搬送方向的下游側端部。抽吸噴嘴12,係與配置在腔室8外的洗淨集塵裝置(省略圖示)連接,可以將抽吸的生成物朝洗淨集塵裝置排出。又,抽吸口12a,並不以與本實施型態同樣的配置為限,只要是配置在比玻璃基板2的搬送路徑還上方即可。然而,因為具有將在蝕刻處理所發生的生成物抽吸並朝腔室8外排出之作用,所以,抽吸口12a,即使在作成與本實施型態不同的配置之場合,也最好配置在沿搬送方向之比處理器5更下游側。   [0049] 以下,說明關於使用上述之玻璃基板之製造裝置1之本發明實施型態之玻璃基板之製造方法。   [0050] 首先,藉由利用搬送手段3搬送玻璃基板2,從搬入口8aa朝腔室8內搬入玻璃基板2。又,在本實施型態,以沿著從搬入口8aa起到搬出口8ab的搬送路徑之距離作為基準,將沿著搬送路徑的全長比該距離更長的玻璃基板2當作蝕刻處理的對象。此外,在本實施型態,以固定的搬送速度搬送玻璃基板2。   [0051] 其次,使搬入後的玻璃基板2,通過配置在搬入口8aa與處理器5之間的第二虛設處理器11的間隙21。又,從搬入口8aa流入腔室8內、沿著玻璃基板2下表面2a朝搬送方向下游側流去的氣體,係由連接在第二虛設處理器11的箱體10a底部之排氣管22抽吸。除此之外,藉由使第二虛設處理器11作為防風構件的功能,防止從搬入口8aa流入腔室8內之氣體到達處理器5的處理空間13。   [0052] 其次,使第二虛設處理器11的間隙21通過後的玻璃基板2、通過處理器5的處理空間13。此時,自玻璃基板2的先頭部2f即將進入處理空間13之前開始噴射沖洗氣體6。於是,在處理空間13通過中的玻璃基板2的下表面2a側,邊利用各供氣口14供給的處理氣體4對下表面2a實施蝕刻處理,邊利用上游側端部及下游側端部的各個排氣口15將處理氣體4從處理空間13排氣。另一方面,在處理空間13通過中的玻璃基板2的上表面2b側,利用在間隙13a形成的沖洗氣體6的流動,防止由處理器體4對上表面2b造成的蝕刻處理。此外,於蝕刻處理發生的生成物是由抽吸噴嘴12抽吸,朝腔室8外排出。沖洗氣體6,係於玻璃基板2的最後部2e即將進入處理空間13之前停止噴射。   [0053] 於此,在本實施型態,作成在玻璃基板2的最後部2e即將進入處理空間13之前停止噴射沖洗氣體6之態樣,但並不以此為限。玻璃基板2的先頭部2f要是從處理空間13脫出之後,則作成在比玻璃基板2的最後部2e即將進入處理空間13之前更早就停止噴射沖洗氣體6之態樣亦可。   [0054] 其次,使通過處理器5的處理空間13之蝕刻處理後之玻璃基板2、通過配置在處理器5與搬出口8ab之間之第一虛設處理器10的間隙21。又,從搬出口8ab流入腔室8內、沿著玻璃基板2下表面2a朝搬送方向上游側流去的氣體,係由連接在第一虛設處理器10的箱體10a底部之排氣管22抽吸。再者,藉由使第一虛設處理器10作為防風構件的功能,防止從搬出口8ab流入腔室8內之氣體到達處理器5的處理空間13。此外,利用排氣管22,抽吸被玻璃基板2下表面2a拖曳而從處理空間13內朝搬送方向下游側流出之處理氣體4、朝腔室8外排氣。   [0055] 最後,將第一虛設處理器10的間隙21通過後之玻璃基板2、從搬出口8ab朝腔室8外搬出。於是,得到已對下表面2a實施蝕刻處理的玻璃基板2。依照上述,關於本發明實施型態的玻璃基板之製造方法完畢。   [0056] 以下,說明根據關於本發明實施型態之玻璃基板之製造方法之主要作用‧效果。   [0057] 於此方法,由於在處理空間13內,將最上游側的供氣口14配置在比兩排氣口15,15的中間位置還偏靠上游側,只該供氣口14偏靠上游側之部分,就能把可以對玻璃基板2的下表面2a實施蝕刻處理的實質的領域(從最上游側的供氣口14起至下游側端部的排氣口15之領域)拉長。換言之,可以使處理氣體4與玻璃基板2的下表面2a之反應時間拉長。結果,能對玻璃基板2的下表面2a確實地實施蝕刻處理。   [0058] 於此,關於本發明之玻璃基板之製造方法,並不以在上述實施型態已說明的態樣為限。例如,也可以作成於上游側端部的排氣口與下游側端部的排氣口之間,在比兩排氣口的中間位置偏靠上游側配置唯一一個供氣口,由該供氣口供給處理氣體之態樣。該場合,唯一的供氣口,成為最上游側的供氣口,且也是最下游側的供氣口。於是,即使在該場合,由於比起上游側端部的排氣口與最上游側的供氣口(唯一的供氣口)之相互間距離,下游側端部的排氣口與最下游側的供氣口(唯一的供氣口)之相互間距離較長,所以也可以同樣地得到上述之本發明的作用‧效果。[0022] Hereinafter, the manufacturing method of the glass substrate of the embodiment of the present invention will be described with reference to the accompanying drawings. First, the manufacturing apparatus of the glass substrate used in the manufacturing method of a glass substrate is demonstrated.  [0023] Here, in the following description, the conveyance direction of the glass substrate (the direction from right to left in FIG. 1) is marked as the "conveyance direction". In addition, the width direction of the glass substrate orthogonal to the conveying direction (the direction perpendicular to the paper surface in Figure 1) is marked as "width direction", and the length along the "width direction" is marked as "full width" or " Width size". In addition, the vertical direction facing the upper and lower surfaces of the glass substrate is referred to as the "up and down direction". [0024] As shown in FIG. 1, a glass substrate manufacturing apparatus 1 is provided as a main constituent element: a conveying means 3 for horizontally conveying a glass substrate 2 in a flat position, for facing the glass substrate 2 being conveyed The lower surface 2a of the glass substrate 2 uses a processing gas 4 (hydrogen fluoride in this embodiment) to perform an etching process with a processor 5, and a rinse gas jet nozzle 7 for spraying a rinse gas 6 for preventing the upper surface 2b of the glass substrate 2 from being etched. , A chamber 8 for preventing the processing gas 4 from leaking to the outside from the space 9 formed inside the glass substrate 2 is provided with the import port 8aa and the export port 8ab of the glass substrate 2 and is arranged on the conveyance path of the glass substrate 2 The first dummy processor 10 between the processor 5 and the export port 8ab, and the second dummy processor 11 arranged between the processor 5 and the import port 8aa, and the lower part for the processing gas 4 and the glass substrate 2 The product generated by the reaction on the surface 2a is sucked and discharged from the suction nozzle 12 to the outside of the chamber 8.  [0025] The conveying means 3 is composed of a plurality of rollers 3a arranged on the conveying path of the glass substrate 2. With the plurality of rollers 3a, the glass substrate 2 can be conveyed along a conveying path extending in a straight line. Between the rollers 3a adjacent to each other in the conveying direction, the entire width of the lower surface 2a of the glass substrate 2 is exposed. By reacting the exposed lower surface 2a with the processing gas 4, an etching process is performed and the entire width of the lower surface 2a is roughened. In addition, as the conveying means 3, something other than a plurality of rollers 3a may be used, and other materials may be used as long as the whole width of the lower surface 2a of the glass substrate 2 can be exposed during conveyance. [0026] The processor 5 is provided with a main body portion 5a as a lower structure, a top board portion 5b as an upper structure body, and a top board portion 5b as a preventive factor, which sandwiches and opposes the conveying path of the glass substrate 2 up and down. H steel 5c is used as a reinforcing member for the deflection caused by its own weight. Between the main body part 5a and the top plate part 5b, a processing space 13 for performing an etching process on the glass substrate 2 passing therethrough is formed. The processing space 13 is formed as a flat space. The width dimension W1 (refer to FIG. 2) of the processing space 13 and the thickness dimension T1 along the vertical direction are respectively larger than the entire width W2 (refer to FIG. 2) of the glass substrate 2 and the thickness T2 of the glass substrate 2. [0027] Here, when the glass substrate 2 enters the interior from outside the processing space 13, in order to prevent the air and other gases accompanying this and existing around the glass substrate 2 from flowing into the processing space 13, the processing space along the conveying direction is made The length dimension L1 of 13 is preferably in the range of 300 mm to 2000 mm, and more preferably in the range of 600 mm to 1000 mm. In addition, from the viewpoint of properly injecting the flushing gas 6, the above-mentioned length dimension L1 is preferably different from the aspect of this embodiment, and is preferably longer than the length along the conveying direction of the glass substrate 2. In addition, the thickness dimension T1 of the processing space 13 is preferably made in the range of 4 mm to 30 mm. Furthermore, the ratio of the aforementioned length dimension L1 to the thickness dimension T1 (length dimension L1/thickness dimension T1) is preferably set in the range of 10 to 250.  [0028] The main body part 5a has a rectangular parallelepiped shape. The main body 5a is provided with a gas supply port 14 for injecting and supplying the processing gas 4 to the processing space 13, an exhaust port 15 for sucking and exhausting the processing gas 4 from the processing space 13, and a heating valve The processing gas 4 supplied to the processing space 13 and heating means (not shown) such as a heater for preventing condensation caused by the processing gas 4. The exhaust ports 15 are respectively arranged at the upstream end and the downstream end in the conveying direction of the main body 5a. On the other hand, the air supply ports 14 are arranged in plural (three in this embodiment) between the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end along the conveying direction. . [0029] The gas supply port 14 on the most downstream side in the conveying direction of the plurality of gas supply ports 14 has the largest flow rate of the processing gas 4 that supplies gas to the processing space 13. In this embodiment, compared to the others The gas supply port 14 supplies processing gas 4 at twice the flow rate. On the other hand, among the plurality of gas supply ports 14, the concentration of the supplied processing gas 4 is made the same. Each air supply port 14 is connected to the processing space 13 between the rollers 3a adjacent to each other along the conveying direction. In addition, the flow rate of the processing gas 4 supplied from each gas supply port 14 is constant per unit time. Here, regarding the distance along the conveying direction, the distance L2 from the air supply port 14 on the most upstream side to the air supply port 14 in the center is set to be the same as that from the air supply port 14 in the center to the air supply port 14 on the most downstream side. The distance L3 is equal to each other. Furthermore, in this embodiment, three air supply ports 14 are configured, but it is not limited to this, and two or more than four may be configured.  [0030] Each of the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end can send the processing gas 4 sucked from the processing space 13 into the space 16 formed inside the main body portion 5a. The space 16 is connected to an exhaust pipe 17 of a cleaning dust collecting device (not shown) arranged outside the chamber 8. Thereby, the processing gas 4 sent from the processing air 13 into the space 16 through the exhaust port 15 is then exhausted from the space 16 toward the cleaning dust collector through the exhaust pipe 17. In addition, the exhaust pipe 17 is connected to the downstream end of the space 16 in the conveying direction. The exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end can also be provided with a mechanism to individually adjust the exhaust gas ("gas", not only the processing gas 4, but also included in the processing space After the outside 13 is drawn into the inside, it is sucked into the exhaust port 15). On the other hand, it is also possible to close the opening of the exhaust port 15 connected to the processing space 13, or to remove the part constituting the exhaust port 15 from the main body 5a to close the hole communicating with the space 16. , And the exhaust port 15 is omitted.  [0031] Here, compared with the flow rate of the processing gas 4 supplied to the processing space 13 by each gas supply port 14, the gas flow rate of each exhaust port 15 exhausting from the processing space 13 is relatively large. In addition, the gas flow rate for exhausting each exhaust port 15 is constant per unit time. In addition, with regard to the distance along the conveying direction, compared to the distance D1 between the exhaust port 15 at the upstream end and the air supply port 14 on the most upstream side, the exhaust port 15 at the downstream end and the most downstream distance D1 The distance D2 between the air supply ports 14 is relatively long. The length of the mutual distance D2 is preferably 1.2 times or more of the mutual distance D1, preferably 1.5 times or more, and most preferably 2 times or more.  [0032] As shown in FIG. 2, both the air supply port 14 and the exhaust port 15 are formed in a slit shape elongated in the width direction. The width dimension of the air supply port 14 can be made slightly shorter than the full width of the glass substrate 2 as shown in the figure, or it can be made slightly longer than the full width of the glass substrate 2 differently from the same figure. On the other hand, the width dimension of the exhaust port 15 is slightly longer than the entire width of the glass substrate 2. Here, in order to make it easy to supply the processing gas 4 uniformly along the width direction, the opening length S1 of the gas supply port 14 along the conveying direction is preferably made in the range of 0.5 mm to 5 mm. In addition, the opening length of the exhaust port 15 along the conveying direction is longer than the opening length S1 of the air supply port 14 along the conveying direction. Furthermore, in order to avoid that the gas suction formed by the exhaust port 15 hinders the execution of the smooth etching process, the distance L4 from the upstream end edge 5aa of the main body 5a to the exhaust port 15 at the upstream end is compared with The distance L4 from the downstream end edge 5ab to the exhaust port 15 at the downstream end is preferably common and should be in the range of 1 mm to 20 mm. [0033] As shown in FIG. 1, the top portion of the main body portion 5a opposite to the lower surface 2a of the glass substrate 2 passing through the processing space 13 is composed of a plurality of units arranged side by side without gaps along the conveying direction (in this embodiment) There are eight types, including the air supply unit 18 and the connecting unit 19) which will be described later. These plural units constitute the top of the main body portion 5a and constitute the ceiling of the aforementioned space 16. [0034] Among the plurality of units, the air supply unit 18 that forms the air supply port 14 and the connection unit 19 that forms the air supply port 14 are included (in FIG. 2, the air supply unit 18 and the connection unit are surrounded by thick lines, respectively). 19). In this embodiment, among a plurality of units side-by-side, the air supply unit 18 is side-by-side at the second, fourth, and sixth positions from the upstream side in the conveying direction. On the other hand, the connecting unit 19 is arranged side by side at the first, third, fifth, seventh, and eighth positions from the upstream side in the conveying direction. The gas supply unit 18 is provided with a gas supply nozzle 18 a connected to the gas supply port 14, and the gas supply nozzle 18 a is connected to a generator (not shown) of the processing gas 4 arranged outside the chamber 8. The connecting unit 19 connects the adjacent air supply units 18 and between the air supply unit 18 and the exhaust port 15.  [0035] Here, the connection unit 19 (19x) at the first position (the position on the most upstream side) from the upstream side in the conveying direction is arranged and fixed at this position. On the other hand, the connection unit 19 at the third, fifth, seventh, and eighth positions from the upstream side can be replaced with the air supply unit 18, or the air supply port 14 can be replaced by being formed The exhaust unit 20 described later of the exhaust port 20a (in FIG. 1, the exhaust unit 20 is not used). In addition, the air supply unit 18 at the second, fourth, and sixth positions from the upstream side may be replaced with a connection unit 19 or an exhaust unit 20 described later. Thereby, it is possible to add and change the number of the air supply ports 14 or the position of the air supply ports 14 for changing the conveying direction. Furthermore, assuming that the exhaust unit 20 is arranged, the process gas 4 may be exhausted from the exhaust ports 15 and 15 at the upstream end and the downstream end. Hereinafter, the replacement of these units will be described with reference to FIGS. 3a to 3d.  [0036] In each of FIGS. 3a to 3c, the air supply unit 18, the connection unit 19, and the exhaust unit 20 shown are surrounded by thick lines, and their lengths along the conveying direction are made equal to each other. Therefore, in the case of replacing these units, the unit newly arranged with the replacement can be connected to the two adjacent units (in each of Figures 3a to 3c, the two adjacent units shown in the figure are both connecting units. 19 In case), they are arranged side by side without gaps. Furthermore, the newly arranged units can be arranged side by side with no difference in the vertical direction from the two adjacent units.  [0037] Here, as shown in FIG. 3a, the peripheral area 14a of the air supply port 14 of the air supply unit 18 is located at a higher position in the up and down direction than other areas. Thereby, in the peripheral area 14a of the air supply port 14, the distance from the lower surface 2a of the glass substrate 2 passing through the processing space 13 can be made shorter compared to other areas. In this embodiment, the distance between the peripheral area 14a of the air supply port 14 and the lower surface 2a of the glass substrate 2 is half the distance from the lower surface 2a of the glass substrate 2 in other areas. Then, the separation distance is shortened by this part, and the tip of the gas supply port 14 (the outflow port of the processing gas 4) is in a state close to the lower surface 2a of the glass substrate 2. In addition, as shown in FIG. 3c, assuming that the exhaust unit 20 is arranged, the exhaust port 20a formed in the exhaust unit 20 is connected to the aforementioned space 16. Thereby, the processing gas 4 sent from the processing air 13 into the space 16 through the exhaust port 20a is then exhausted from the space 16 toward the cleaning dust collector through the exhaust pipe 17. In addition, the exhaust port 20a is formed in a slit shape elongated in the width direction similarly to the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end. Here, as shown in FIG. 3d, the peripheral area 14a of the air supply port 14 of the air supply unit 18 can also be made to be the same height as other areas.  [0038] As shown in FIG. 1, the top plate 5b is a single plate (a rectangular plate in plan view), and has a flat surface facing the upper surface 2b of the glass substrate 2 passing through the processing space 13. In addition, the top plate portion 5b is a built-in heating means (illustration omitted) such as a heater for preventing condensation caused by the processing gas 4. The H steel 5c is attached to the top plate part 5b to extend in the width direction. Furthermore, there are a plurality of H steels 5c (three in this embodiment), and these plural H steels 5c are arranged at equal intervals along the conveying direction.  [0039] The flushing gas injection nozzle 7 is arranged on the upstream side of the processor 5 in the conveying direction and above the conveying path of the glass substrate 2. The flushing gas injection nozzle 7 can form a gap 13a between the portion of the glass substrate 2 that enters the processing space 13 and the top plate portion 5b, and inject the flushing gas 6 downstream in the conveying direction to form the flushing gas 6 along the conveying direction flow. The flow of the flushing gas 6 can form a full width across the gap 13a. In addition, the flow velocity of the flushing gas 6 injected along the conveying direction is relatively faster than the conveying speed of the glass substrate 2 formed by the conveying means 3. Thereby, the processing gas 4 that is about to flow into the gap 13a is driven to the downstream side in the conveying direction by the pressure of the flushing gas 6, and the inflow into the gap 13a can be prevented. Therefore, the roughening of the upper surface 2b of the glass substrate 2 is avoided. Moreover, in this embodiment, compressed dry air (CDA) is used as the flushing gas 6.  [0040] As shown in FIG. 4a, the flushing gas 6 is attached to the leading head 2f of the glass substrate 2 that is being transported and starts to spray immediately before entering the processing space 13. Furthermore, as shown in FIG. 4b, the flushing gas 6 is tied to the last part 2e of the glass substrate 2 being transported and stops jetting immediately before entering the processing space 13. Here, in the present embodiment, the timing of the start or stop of the flushing gas 6 injection is determined in the following manner. First, on the upstream side of the flushing gas injection nozzle 7 in the conveying direction, a detection means (not shown) such as an induction device capable of detecting the passage of the leading portion 2f or the trailing portion 2e of the glass substrate 2 is arranged. When the detection means detects that the leading head 2f of the glass substrate 2 passes, it is determined to start the flushing gas 6 injection based on the transport speed of the glass substrate 2 and the distance along the transport path from the leading head 2f to the processing space 13 The timing. Similarly, when the detecting means detects that the last part 2e has passed, the timing to stop spraying is determined based on the conveying speed and the distance from the last part 2e to the processing space 13.  [0041] As shown in FIG. 5, the flushing gas injection nozzle 7 is provided with a cylindrical pipe 7a extending in the width direction. A plurality of hoses 7b are inserted into the pipe 7a at intervals in the width direction. Each hose 7b can supply flushing gas 6 into the pipe 7a. In addition, inside the pipe 7a, an elongated plate 7c in the width direction is installed, so that the flushing gas 6 flowing from each hose 7b into the pipe 7a is formed after the plate 7c in a circuitous manner, from and the pipe 7c The ejection portion 7d connected to 7a ejects. The injection port of the flushing gas 6 formed in the injection portion 7d is formed in a slit shape elongated in the width direction. The spraying angle θ of the flushing gas 6 formed by the spraying portion 7d (the angle at which the spraying portion 7d is inclined with respect to the pointing direction of the upper surface 2b of the glass substrate 2) can be changed within the range of 25° to 70°. In addition, the posture of the flushing gas injection nozzle 7 is shown as the solid line in FIG. 5, or it can be adjusted so that the injection portion 7d points into the processing space 13, or as shown by the broken line in the figure, the injection portion 7d can be adjusted so that the injection portion 7d points out of the processing space 13.  [0042] As shown in Fig. 1, the chamber 8 has a rectangular parallelepiped shape. In addition to the aforementioned carry-in port 8aa and carry-out port 8ab, the chamber 8 also includes a main body 8a that forms a ceiling hole 8ac, and a lid body 8b for plugging the ceiling hole 8ac.  [0043] The carry-in port 8aa and the carry-out port 8ab are formed on the side wall portion 8ad of the main body 8a, and are formed as elongated flat openings along the width direction. There are a plurality of chamber top holes 8ac (three in this embodiment) formed on the chamber top 8ae of the main body 8a. The cover 8b can plug the entire opening of the ceiling hole 8ac, and can be attached to and detached from the main body 8a. Thereby, by removing the cover 8b from the main body 8a, the ceiling hole 8ac can be opened, and the adjustment, maintenance, and inspection of the processor 5 can be performed through the ceiling hole 8ac. [0044] The first dummy processor 10 is provided with a rectangular box body 10a arranged below the conveying path of the glass substrate 2, a top plate 10b arranged above the conveying path so as to face the box 10a, and H steel 10c is a reinforcing member for preventing deflection caused by the weight of the top plate 10b. Between the box body 10a and the top plate 10b, a gap 21 for the glass substrate 2 to pass through is formed. The first dummy processor 10 functions as a windproof member for avoiding the airflow flowing from the export port 8ab into the chamber 8 to the processing space 13 and adversely affecting the etching process. Here, in order to effectively function as a windproof member, the length of the first dummy processor 10 along the conveying direction is preferably 50 mm or more, and more preferably 100 mm or more.  [0045] At the upper end of the box body 10a, a rectangular opening 10aa that is elongated in the width direction is formed. On the other hand, at the bottom of the box body 10a, an exhaust pipe 22 of a cleaning dust collecting device (not shown) arranged outside the chamber 8 is connected. Thereby, the first dummy processor 10 can be dragged by the lower surface 2a of the glass substrate 2 and flow out from the processing space 13 toward the downstream side in the conveying direction. The processing gas 4 can be discharged from the exhaust pipe through the opening 10aa. 22 After suction, exhaust air to the cleaning dust collector. The top plate 10b is made as a single plate body (a rectangular plate body in plan view), and has a flat surface facing the upper surface 2b of the glass substrate 2 through which the gap 21 passes. The H steel 10c is tied to the top plate 10b and extends in the width direction.  [0046] The first dummy processor 10 has the same external shape as the processor 5 when viewed from the direction along the conveying direction, and is arranged to appear to overlap the processor 5. In other words, between the main body portion 5a of the processor 5 and the box body 10a of the first dummy processor 10, the width dimension and the dimension along the vertical direction can be made the same. Similarly, (A) the top plate portion 5b of the processor 5 and the top plate 10b of the first dummy processor 10, (B) the H steel 5c of the processor 5 and the H steel 10c of the first dummy processor 10, (C) processing The processing space 13 of the device 5 and the gap 21 of the first dummy processor 10 are made the same in the width dimension and the dimension along the vertical direction between the combinations (A) to (C).  [0047] The second dummy processor 11 has the same configuration as the first dummy processor 10, except for the following two points (1) and (2). Therefore, by attaching the same figure number to the second dummy processor 11 as that attached to the first dummy processor 10 in FIG. 1, the repeated description between the two processors 10 and 11 is omitted. (1) The configuration is different from the first dummy processor 10. (2) It serves as a point for avoiding the function of a windproof member for avoiding the airflow flowing into the chamber 8 from the carry-in port 8aa instead of the carry-out port 8ab to the processing space 13 and adversely affect the etching process. Also, the second dummy processor 11, like the first dummy processor 10, has the same external shape as the processor 5 when viewed from the direction along the conveying direction, and is arranged so as to overlap the processor 5 .  [0048] The suction nozzle 12 is installed on the top 8ae of the chamber 8, and the suction port 12a is connected to the space 9. The suction port 12a is arranged on the downstream side of the first dummy processor 10 in the conveying direction, and is arranged at the downstream end of the space 9 in the conveying direction. The suction nozzle 12 is connected to a cleaning dust collecting device (not shown) arranged outside the chamber 8 and can discharge the sucked product to the cleaning dust collecting device. In addition, the suction port 12a is not limited to the same arrangement as in the present embodiment, as long as it is arranged above the conveyance path of the glass substrate 2. However, because it has the function of sucking and expelling the products generated during the etching process to the outside of the chamber 8, the suction port 12a is preferably arranged even if it is arranged differently from this embodiment. On the downstream side of the processor 5 in the conveying direction.  [0049] Hereinafter, a method for manufacturing a glass substrate of the embodiment of the present invention using the above-mentioned glass substrate manufacturing apparatus 1 will be described.  [0050] First, by transporting the glass substrate 2 by the transporting means 3, the glass substrate 2 is transported into the chamber 8 from the transport port 8aa. In addition, in this embodiment, the distance along the conveyance path from the import port 8aa to the export port 8ab is used as a reference, and the glass substrate 2 whose total length along the conveyance path is longer than this distance is regarded as the target of the etching process. . In addition, in this embodiment, the glass substrate 2 is conveyed at a fixed conveying speed.  [0051] Next, the imported glass substrate 2 is passed through the gap 21 of the second dummy processor 11 arranged between the import port 8aa and the processor 5. In addition, the gas flowing from the inlet 8aa into the chamber 8 and flowing to the downstream side in the conveying direction along the lower surface 2a of the glass substrate 2 is connected to the exhaust pipe 22 at the bottom of the box 10a of the second dummy processor 11. Suction. In addition, by using the second dummy processor 11 as a windproof member, the gas flowing into the chamber 8 from the import port 8aa is prevented from reaching the processing space 13 of the processor 5.  [0052] Next, the glass substrate 2 passed through the gap 21 of the second dummy processor 11 passes through the processing space 13 of the processor 5. At this time, the flushing gas 6 is sprayed from the leading head 2f of the glass substrate 2 immediately before entering the processing space 13. Then, on the lower surface 2a side of the glass substrate 2 through which the processing space 13 passes, the lower surface 2a is etched using the processing gas 4 supplied from each gas supply port 14 and the upstream end and downstream end are used to etch the lower surface 2a. Each exhaust port 15 exhausts the processing gas 4 from the processing space 13. On the other hand, on the upper surface 2b side of the glass substrate 2 through which the processing space 13 passes, the flow of the flushing gas 6 formed in the gap 13a prevents the upper surface 2b from being etched by the processor body 4. In addition, the product generated during the etching process is sucked by the suction nozzle 12 and discharged to the outside of the chamber 8. The flushing gas 6 is connected to the last part 2e of the glass substrate 2 and stops spraying immediately before entering the processing space 13.  [0053] Here, in this embodiment, the spraying of the flushing gas 6 is stopped immediately before the last part 2e of the glass substrate 2 enters the processing space 13, but it is not limited to this. If the leading head 2f of the glass substrate 2 comes out of the processing space 13, it may be configured to stop spraying the flushing gas 6 before the last part 2e of the glass substrate 2 enters the processing space 13.  [0054] Next, the glass substrate 2 after the etching process passed through the processing space 13 of the processor 5 is passed through the gap 21 of the first dummy processor 10 arranged between the processor 5 and the export port 8ab. In addition, the gas flowing from the outlet 8ab into the chamber 8 along the lower surface 2a of the glass substrate 2 toward the upstream side in the conveying direction is connected to the exhaust pipe 22 at the bottom of the box 10a of the first dummy processor 10. Suction. Furthermore, by using the function of the first dummy processor 10 as a windproof member, the gas flowing into the chamber 8 from the export port 8ab is prevented from reaching the processing space 13 of the processor 5. In addition, the exhaust pipe 22 sucks and exhausts the processing gas 4 that is dragged by the lower surface 2 a of the glass substrate 2 and flows out from the processing space 13 toward the downstream side in the conveying direction, and is exhausted to the outside of the chamber 8.  [0055] Finally, the glass substrate 2 after passing through the gap 21 of the first dummy processor 10 is carried out from the export port 8ab to the outside of the chamber 8. As a result, the glass substrate 2 on which the lower surface 2a has been etched is obtained. According to the above, the manufacturing method of the glass substrate of the embodiment of the present invention is completed.  [0056] The following describes the main functions and effects of the glass substrate manufacturing method according to the embodiment of the present invention. [0057] In this method, since the most upstream air supply port 14 is arranged on the upstream side than the middle position of the two exhaust ports 15, 15 in the processing space 13, only the air supply port 14 is skewed. On the upstream side, the substantial area (the area from the air supply port 14 on the most upstream side to the exhaust port 15 at the downstream end) that can be etched on the lower surface 2a of the glass substrate 2 can be elongated . In other words, the reaction time between the processing gas 4 and the lower surface 2a of the glass substrate 2 can be lengthened. As a result, it is possible to reliably perform the etching treatment on the lower surface 2a of the glass substrate 2.  [0058] Herein, the manufacturing method of the glass substrate of the present invention is not limited to the aspects described in the above-mentioned embodiments. For example, it can also be formed between the exhaust port at the upstream end and the exhaust port at the downstream end, and a single air supply port is arranged on the upstream side than the middle position of the two exhaust ports. The state of supplying processing gas to the port. In this case, the only air supply port becomes the air supply port on the most upstream side and also the air supply port on the most downstream side. Therefore, even in this case, the exhaust port at the downstream end is compared with the most downstream side due to the distance between the exhaust port at the upstream end and the most upstream air supply port (the only air supply port). The air supply ports (the only air supply port) have a long mutual distance, so the above-mentioned functions and effects of the present invention can also be obtained in the same way.

[0059]2‧‧‧玻璃基板2a‧‧‧下表面4‧‧‧處理氣體5a‧‧‧本體部(下部構成體)5b‧‧‧頂板部(上部構成體)13‧‧‧處理空間14‧‧‧供氣口15‧‧‧排氣口D1‧‧‧相互間距離D2‧‧‧相互間距離[0059] 2. ‧ ‧ glass substrate 2a ‧ ‧ lower surface 4 ‧ ‧ processing gas 5a ‧ ‧ main body (lower structure) 5b ‧ ‧ top plate (upper structure) 13 ‧ ‧ processing space 14 ‧‧‧Air supply port 15‧‧‧Exhaust port D1‧‧‧Distance between each other D2‧‧‧Distance between each other

[0021]   圖1係顯示玻璃基板之製造裝置的概略的縱剖側面圖。   圖2係從上方來看玻璃基板之製造裝置具備的處理器的本體部之平面圖。   圖3a係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。   圖3b係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。   圖3c係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。   圖3d係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。   圖4a係放大顯示玻璃基板之製造裝置具備的沖洗氣體噴射噴嘴的附近之縱剖側面圖。   圖4b係放大顯示玻璃基板之製造裝置具備的沖洗氣體噴射噴嘴的附近之縱剖側面圖。   圖5係放大顯示玻璃基板之製造裝置具備的沖洗氣體噴射噴嘴的附近之縱剖側面圖。[0021]    FIG. 1 is a schematic longitudinal sectional side view showing a manufacturing apparatus of a glass substrate.   FIG. 2 is a plan view of the main body of the processor included in the glass substrate manufacturing apparatus viewed from above.   FIG. 3a is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.   FIG. 3b is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.   FIG. 3c is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.   FIG. 3d is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.   Fig. 4a is an enlarged longitudinal sectional side view showing the vicinity of the flushing gas injection nozzle provided in the manufacturing apparatus of the glass substrate.   FIG. 4b is an enlarged longitudinal sectional side view showing the vicinity of the flushing gas injection nozzle provided in the manufacturing apparatus of the glass substrate.   Fig. 5 is an enlarged longitudinal sectional side view showing the vicinity of the flushing gas injection nozzle included in the manufacturing apparatus of the glass substrate.

1:製造裝置 1: Manufacturing device

2:玻璃基板 2: Glass substrate

2a:下表面 2a: lower surface

2b:上表面 2b: upper surface

2e:最後部 2e: last part

2f:先頭部 2f: head first

3:搬送手段 3: Means of transport

3a:輥子 3a: roller

4:處理氣體 4: Process gas

5:處理器 5: processor

5a:本體部 5a: Body part

5b:頂板部 5b: Top plate

5c:H鋼 5c: H steel

6:沖洗氣體 6: Flushing gas

7:沖洗氣體噴射噴嘴 7: Flushing gas jet nozzle

8:腔室 8: Chamber

8a:本體 8a: body

8aa:搬入口 8aa: move entrance

8ab:搬出口 8ab: move out

8ac:室頂孔 8ac: roof hole

8ad:側壁部 8ad: side wall

8ae:室頂部 8ae: top of the room

8b:蓋體 8b: cover

9:空間 9: Space

10:第一虛設處理器 10: The first dummy processor

10a:箱體 10a: cabinet

10aa:開口 10aa: opening

10b:頂板 10b: Top plate

10c:H鋼 10c: H steel

11:第二虛設處理器 11: The second dummy processor

12:抽吸噴嘴 12: Suction nozzle

12a:抽吸口 12a: Suction port

13:處理空間 13: processing space

13a:間隙 13a: gap

14:供氣口 14: Air supply port

15:排氣口 15: Exhaust port

16:空間 16: space

17:排氣管 17: Exhaust pipe

18:供氣單元 18: Air supply unit

18a:供氣噴嘴 18a: Air supply nozzle

19、19x:連接單元 19, 19x: connection unit

21:間隙 21: gap

22:排氣管 22: Exhaust pipe

T1:厚度尺寸 T1: thickness dimension

T2:厚度 T2: thickness

L1:長度尺寸 L1: Length dimension

L2、L3:距離 L2, L3: distance

D1、D2:相互間距離 D1, D2: mutual distance

Claims (3)

一種玻璃基板之製造方法,係包含有:一邊將玻璃基板以平放姿勢朝搬送方向搬送,使其通過形成於使對向配置的上部構成體與下部構成體之相互間的處理空間,一邊使用從設在前述下部構成體的供氣口朝前述處理空間供氣,且藉由分別設在前述下部構成體之前述搬送方向的上游側端部及下游側端部之排氣口從前述處理空間排氣的處理氣體,對前述玻璃基板的下表面實施蝕刻處理之製程;其特徵係:在前述上游側端部之排氣口與前述下游側端部之排氣口之間,將前述供氣口沿著前述搬送方向配置一個或者配置複數個;前述供氣口為一個的場合,在比前述上游側端部的排氣口與前述下游側端部的排氣口的中間位置更靠上游側,配置前述供氣口,前述供氣口為複數個的場合,關於沿著前述搬送方向之距離,比起前述上游側端部的排氣口與最上游側的前述供氣口之相互間距離,前述下游側端部的排氣口與最下游側的前述供氣口之相互間距離較長。 A method for manufacturing a glass substrate, which includes: transporting the glass substrate in a horizontal position in a conveying direction and passing it through a processing space formed between an upper structure and a lower structure that are arranged facing each other while using it Air is supplied to the processing space from the air supply port provided in the lower structure, and the processing space is supplied from the processing space through exhaust ports respectively provided at the upstream end and the downstream end of the conveying direction of the lower structure The exhausted processing gas is a process in which the lower surface of the glass substrate is etched; the feature is that the gas is supplied between the exhaust port at the upstream end and the exhaust port at the downstream end One or more ports are arranged along the conveying direction; when the supply port is one, it is located on the upstream side than the middle position between the exhaust port at the upstream end and the exhaust port at the downstream end , When the air supply ports are arranged and the air supply ports are plural, the distance along the conveying direction is greater than the distance between the exhaust port at the upstream end and the air supply port on the most upstream side The distance between the exhaust port at the downstream end and the air supply port at the most downstream side is relatively long. 如申請專利範圍第1項之玻璃基板之製造方法,其中將前述供氣口形成為沿與前述玻璃基板的搬送方向正交之寬度方向呈長條狀的狹縫狀。 As for the manufacturing method of the glass substrate of the 1st patent application range, the said air supply port is formed in the elongate slit shape along the width direction orthogonal to the conveyance direction of the said glass substrate. 如申請專利範圍第1或2項之玻璃基板之製造方法,其中前述供氣口為複數個的場合,複數個前述供氣口之中,使最下游側的前述供氣口供給的前述處理氣體的流量為最多。 For example, in the manufacturing method of the glass substrate of item 1 or 2 of the scope of patent application, in the case where there are plural air supply ports, among the plural air supply ports, the processing gas supplied from the air supply port on the most downstream side The traffic is the most.
TW106138561A 2016-11-16 2017-11-08 Manufacturing method of glass substrate TWI735698B (en)

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JP2016-223253 2016-11-16
JP2016223253A JP6667797B2 (en) 2016-11-16 2016-11-16 Manufacturing method of glass substrate

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