TWI820256B - 基板處理設備 - Google Patents

基板處理設備 Download PDF

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TWI820256B
TWI820256B TW108142164A TW108142164A TWI820256B TW I820256 B TWI820256 B TW I820256B TW 108142164 A TW108142164 A TW 108142164A TW 108142164 A TW108142164 A TW 108142164A TW I820256 B TWI820256 B TW I820256B
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wafer boat
substrate
elevator
cassette
station
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TW202027200A (zh
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傑羅恩 福祿特
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

本發明係有關一種具有一第一和第二反應器的基板處理設備，每個反應器配置有一升降機以將具有基板的一晶舟運送到反應器。此設備具有一晶舟運送裝置，以在一基板裝載站、第一及/或第二升降機及一冷卻站之間運送具有基板的晶舟。基板裝載站和冷卻站可配置在第一和第二升降機的相對側上。

Description

基板處理設備
本揭露總體上係有關一種用於處理複數個基板之基板處理設備。更具體是，本揭露係有關一種包括用於處理在晶舟(boat)中的複數個基板之一第一和一第二反應器之基板處理設備。此設備可具有一第一和一第二升降機，以分別將具有基板的晶舟在第一和第二反應器來回運送。此設備可具有一構造及配置成在晶舟和基板匣盒(substrate cassette)之間運送基板之基板操縱機器人。
容納有複數個基板的匣盒可藉由一匣盒操縱器在基板處理設備中運送，匣盒操縱器可在一匣盒進出埠、一匣盒站及/或一儲存裝置之間運送匣盒。儲存裝置可包括用於儲存複數個匣盒之一匣盒儲存轉盤。一基板操縱機器人可構造及配置成將基板從匣盒站處的匣盒運送到基板晶舟，以將多個基板填充到晶舟。
為了改善生產率，基板處理設備可具有第一和第二反應器。一第一或第二升降機可將填充過的晶舟分別移入第一或第二反應器以處理基板。在反應器中處理之後，可使用分別的升降機降下晶舟並冷卻。在冷卻之後，可藉由基板操縱機器人將處理過的 基板從晶舟運送到匣盒。
由於受到可置放基板處理設備的無塵室製造場所中空間限制，使得將基板處理設備的寬度盡可能設計較小是有利的。基板處理設備的有限寬度可使其能夠緊密並排而堆疊更多的處理設備。
本發明內容以簡化形式來介紹精選之概念。此等概念將在示例實施例的實施方式中更詳細描述。本發明內容並非意欲識別所主張之標的之關鍵特徵或基本特徵，亦非意欲用以限制所主張之標的之範疇。
根據一目的，想要提供一種具有限寬度的基板處理設備。
因此，提供一種包括用於處理晶舟中複數個基板的一第一和一第二反應器之基板處理設備。此設備可具有一第一升降機及一第二升降機，以分別將具有基板的晶舟在第一和第二反應器來回運送。此設備可具有構造及配置成在晶舟和基板匣盒之間運送基板之一基板操縱機器人。此設備可包括一晶舟運送裝置，以在一基板裝載站(其中可使用基板操縱機器人將基板運送到晶舟)、第一及/或第二升降機及一冷卻站(其構造及配置成冷卻具有經處理基板的晶舟)之間運送具有基板的晶舟。此設備可構造及配置成使基板裝載站和冷卻站在第一和第二升降機的相對側上。
使基板裝載站和冷卻站在第一和第二升降機的相對側上，冷卻站可不增加設備的寬度。有限寬度可使其能夠在無塵室製造場所中緊密並排堆疊更多的處理設備。
為了概述本揭露及所達成之優於先前技術的優點，本揭露之某些目標及優點已在本文中於上文描述。當然，應了解的是，可無須根據本揭露之任何特定實施例來達成所有此類目標或優點。因此，例如，熟習此項技藝者將明白，本揭露可以達成或優化如本文中所教示或提示的一個優點或一組優點的方式來實施或進行，但未必達成如本文中所教示或提示的其他目的或優點。
所有這些實施例都在本揭露所揭露的範疇內。熟習此項技藝者可從下列參考附圖之某些實施例的詳細描述而變得更明白這些及其他實施例，然而本揭露並未受限於所揭露的任何特定實施例。
1:熱爐
2:殼體
4:前壁
5:側壁
6:後壁
7:匣盒操縱器
9:匣盒操縱器臂
11:匣盒進出埠
15:匣盒站
16:匣盒轉盤
19:內壁
33:基板進出口
35:基板操縱機器人
36:基板操縱臂
37:基板操縱室
38:基板裝載站
39:氣體入口
41:維護門
43:維護區域
45:反應器/第一反應器/第二反應器
46:升降機/第一升降機/第二升降機
47:冷卻站
48:晶舟支撐臂
49:處理模組
50:晶舟運送裝置
51:晶舟運送臂
52:頂面
53:下部區域
54:晶舟支撐件
55:反應器門
56:反應器開口
58:氣體入口
60:氣體抽出器
61,62:晶舟運送機器人
63:閘閥/晶舟運送機器人
67:氣櫃
B:晶舟
C:晶圓匣盒
雖然本說明書藉由特別指出及清楚要求保護本揭露的實施例作出結論，但是從連同參考附圖之本揭露實施例的某些示例描述可更容易確定本揭露實施例的優點，其中：第1A圖顯示根據一實施例之熱爐的示例之示意性頂視圖。
第1B圖顯示第1A圖所示一部分之放大圖。
第1C圖顯示第1A圖所示實施例之一部分之側視圖。
第2圖顯示根據一進一步實施例之熱爐的示例之示意性頂視圖。
雖然下面揭露某些實施例和示例，但是熟習此項技藝者將瞭解，本揭露延伸超出本揭露所具體揭露之實施例及/或用途及其明顯修改及其等效形式。因此，其目的在於所揭示之本揭露的範疇不應受下文所描述的特定揭示之實施例的限制。本文呈現的圖式並非意指任何特定材料、結構或裝置的實際視圖，而僅係用以描述本揭露之實施例的理想化表現。
如本文所使用的，術語「基板」或「晶圓」可意指可使用、或在其上面可形成裝置、電路或薄膜的任何或某些基底材料或材料。術語「半導體裝置結構」可意指處理過或部分處理過的半導體結構之任何部分，即是，包括或界定欲形成在半導體基板上或形成在半導體基板中之半導體裝置的一主動元件或被動元件的至少一部分。
第1A圖至第1C圖顯示根據一實施例之基板處理設備(例如熱爐1)之示例。熱爐1可包括一殼體2，殼體2具有由兩側壁5連接的一前壁4及一後壁6(參見第1A圖)。
熱爐1可包括用於儲存複數個晶圓匣盒C的儲存裝置(未示出)，諸如匣盒儲存轉盤，其中晶圓匣盒之每一者容納複數個基板。匣盒儲存轉盤可包括用於支撐匣盒的多個平台檯階。平台檯階可連接到可繞垂直軸旋轉安裝的中央支撐件。每個平台檯階配置以容納多個晶圓匣盒C。驅動總成可操作地連接到中央支撐件，以 使中央支撐件連同多個平台檯階繞垂直軸旋轉。
熱爐1可具有匣盒操縱器7，匣盒操縱器7具有一匣盒操縱器臂9，匣盒操縱器臂9配置以在匣盒儲存轉盤、相鄰於熱爐1的殼體2的前壁4的匣盒進出埠11、及/或匣盒站15之間運送晶圓匣盒C。匣盒操縱器7可包括一升降機構，以到達在不同高度處的匣盒。用於儲存匣盒的每個平台檯階中可具有切口，切口的尺寸和形狀設計成允許匣盒操縱器臂9垂直通過其中，並允許平台檯階在其上支撐晶圓匣盒C。
可設置用於分隔匣盒操縱器7和基板操縱機器人35的內壁19。此壁可具有相鄰於匣盒站15的可關閉基板進出口33，其可構造及配置成亦打開晶圓匣盒C。更多有關用於打開匣盒的可關閉基板進出口33的資訊，請參考美國專利案第6,481,945號中的說明，其在此是以引用方式併入本文供參考。匣盒站15可具有一匣盒轉盤16，以轉動晶圓匣盒C及/或壓下可關閉基板進出口33。
基板處理設備可包括具有基板操縱臂36之基板操縱機器人35，以運送基板。可將基板從位於匣盒站15上的匣盒C藉由可關閉基板進出口33運送到在基板裝載站38處的基板晶舟B，且反之亦然。熱爐可包括容納有基板操縱機器人35之基板操縱室37。
熱爐1可具有用於處理複數個基板之第一和第二反應器45。使用兩反應器可提高熱爐1的生產率。
殼體2可具有在熱爐1的整個長度上延伸的第一和第二側壁5。界定此設備寬度的熱爐的側壁5之間的距離可介於1.3公 尺和2公尺之間，較佳地介於1.5和1.8公尺之間，而且最佳地介於1.6和1.7公尺之間，例如約1.65公尺。可從熱爐的後側6或前側4施行熱爐1的維護，使得可以側壁5不需要有門。因此，側壁5可構造成無需供維護的主要門。因此，多個熱爐1可並排置放在半導體製造廠的無塵室中。藉此，相鄰熱爐的側壁5可非常靠近地置放，或甚至彼此抵靠在一起。
有利地，多個熱爐的前側4可形成壁部，此壁部可在對顆粒具有非常嚴格要求的所謂「無塵室」的非常潔淨環境中連接(interface)匣盒運送裝置。相鄰的熱爐的後側6可連接對顆粒的要求不如前側4嚴格的維護通道。維護通道可用於從熱爐1的後側進行維護。
第1B圖顯示第1A圖的一部分的細節之頂視圖，而且第1C圖顯示第1B圖的一部分之側視圖。第1B圖和第1C圖顯示第一和第二反應器45可分別具有第一和第二升降機46。反應器45和升降機46可設置在處理模組49中。升降機可構造及配置成在處理模組49的下部區域53和反應器45之間運送具有多個基板的晶舟。每個升降機46可包括晶舟支撐臂48，晶舟支撐臂48具有配置以如同晶舟支撐件而作用的支承面，而且晶舟支撐臂48可沿著垂直方向移動。
閘閥63可設置在基板操縱機器人35和處理模組49的下部區域之間，以在下部區域中產生一微環境。基板裝載站38可構造及配置有一晶舟支撐件54，以在處理模組中支撐具有基板的晶舟B。處理模組49中亦可提供冷卻站47，冷卻站47構造及配置有晶 舟支撐件54以支撐具有基板的晶舟，以冷卻具有經處理基板的晶舟。晶舟支撐件54可構造及配置成靜止在水平面。
可設置晶舟運送裝置50以在第一和第二升降機46、基板裝載站38和冷卻站47之間運送具有基板的晶舟。晶舟運送裝置50可構造及配置成在下部區域內的複數個晶舟位置之間運送晶舟B，同時保持晶舟B垂直。所述運送可為實質上水平。
晶舟運送裝置50可包括兩個晶舟運送機器人，每一者用於每一反應器45。每個晶舟運送機器人可具有兩個晶舟運送臂51。晶舟運送臂51可旋轉以在基板裝載站38、升降機46及/或冷卻站47之間水平運送晶舟。基板裝載站38、升降機46或冷卻站47可在例如數公分的短距離內垂直移動，以從晶舟運送臂51的固持器處拾取晶舟或放下晶舟。基板裝載站38的晶舟支撐件54和冷卻站47可具有可移動頂面52，以拾取晶舟或放下晶舟B。晶舟運送臂51可具有固持器以固持晶舟。固持器可垂直固持晶舟B。在晶舟B下方，可設置反應器門55，當晶舟B移入反應器45時，反應器門可適合於反應器開口56中。在熱爐1中可同時使用多個晶舟，例如2、3或4個晶舟B。
或者，晶舟運送臂51可在例如數公分的短距離內垂直移動，以在基板裝載站38、升降機46或冷卻站47處拾取晶舟或放下晶舟。
或者，晶舟運送裝置50可包括三或四個用於晶舟的固持器。藉由在每個反應器中使用兩個以上的固持器，可在基板裝 載站38和冷卻站47上將晶舟保持在固持器上，因此可不需要晶舟支撐件。
或者，晶舟運送臂51可構造及配置成在基板裝載站38、升降機46和冷卻站47之間水平轉移晶舟。晶舟運送臂51的固持器可具有一U形體，以固持晶舟。更多有關構造及配置成轉移晶舟的晶舟運送臂的資訊，請參考美國專利案第7,198,447號中的說明，其在此是以引用方式併入本文供參考。
基板裝載站38和冷卻站47可構造及配置在第一和第二升降機46的相對側上，以保持熱爐1的寬度受限。例如，基板裝載站38可構造及佈置在第一和第二升降機46的前方，而且冷卻站47可構造及配置在第一和第二升降機46的後方，以保持熱爐1的寬度受限。
冷卻站47可用於冷卻具有剛處理過的熱的基板的晶舟。冷卻站47可具有一構造及配置成抽出熱氣體以冷卻基板之氣體抽出器60。冷卻站47可具有一氣體入口58，以對冷卻站47提供氣體。此設備可包括兩個冷卻站47。氣體入口58和氣體抽出器60可流體連接到泵，以在冷卻站的基板上產生氣流。可設置熱交換器成在冷卻調節(accommodation)中冷卻氣流及加速冷卻基板。氣體入口58和氣體抽出器60可構造及配置成產生水平氣流以冷卻基板。或者，氣體入口58和氣體抽出器60可構造及配置成產生通過微環境的向下氣流，以減少顆粒污染。
頂視圖中的基板處理設備可配置成實質U形體(參見 第1A圖)。晶舟運送裝置50和反應器45可構造及配置在U形體的底部。維護區域43可構造及配置在U形體的腳部之間。U形體的兩腳部之間的距離可介於60和120公分(cm)之間，較佳地介於80和100公分之間，而且最佳地約90公分，以允許維護人員有足夠空間。後門可設置在U形體的腳部之間，當不使用時可關閉維護區域43。實質U形體亦可包括一V形體。
此設備可構造及配置成允許維護人員從維護區域43到第一和第二反應器兩者對反應器45進行維護。例如，為了讓維護人員維護反應器45的加熱絲、加熱感測器及/或製程氣體介面(出口及/或入口)。兩個反應器45可構造及配置成相鄰於相同維護區域43，以允許從相同維護區域43維護兩個反應器45。可設置維護門41以允許進行維護。維護門可設置在冷卻站的後方，以允許從此設備的背面進行維護。
因此，維護人員可不需要進入熱爐1的殼體2內對反應器45進行維護工作。因此，可降低維護人員受傷及/或下部區域及/或反應器45受污染的風險。從殼體外部進行維護亦可提高維護的速度及/或準確性。對於兩個反應器45使用相同維護區域43，可減少包含有維護區域43的熱爐1的總佔用面積(footprint)。
處理模組49可具有沿著維護區域43的方向可開啟的維護門41。處理模組49二者可具有單獨的維護門41，以允許維護人員從相同維護區域43維護每個反應器45。處理模組49的維護門41亦可允許從相同維護區域43維護熱爐的下部區域，以維護晶舟運送 裝置50、冷卻站47、氣體入口58、氣體抽出器60、閘閥63、升降機46、基板裝載站38及/或晶舟B。
或者，每個處理模組29可設置有兩個維護門；頂部維護門用於進入反應器45及底部維護門用於進入熱爐的下部區域53。
閘閥63可設置在基板操縱室37和處理模組49之間。閘閥63可在維護基板操縱機器人35期間關閉，使得兩個處理模組之一者可持續工作，同時經由另一處理模組維護基板操縱機器人35。
由於兩個反應器構成為分離單元，使得對反應器45之一者進行維護不會干擾反應器45之另一者。閘閥63可在一個反應器的維護期間關閉，使得另一個反應器和基板操縱機器人35可持續工作。
反應器45可具有可連接到排氣管或製程氣體輸送系統之製程氣體介面(出口及/或入口)。製程氣體介面可設置相鄰於維護區域43，使得在維護期間使其可易於進入。
製程氣體輸送系統可(部分)設置在構造及配置成提供製程氣體至第一及/或第二反應器45的氣櫃67中。氣櫃可設置鄰近U形體的腳部之頂部。將氣櫃設置鄰近U形體的頂部提供便利維護。此外，如果由於沒有諸如基板操縱機器人及/或匣盒操縱器之類的關鍵部件，此設備的背面存在空間而需調整或延長氣櫃，則這樣的置放提供靈活性。
排氣管可構造及配置成從第一和第二反應器之至少一者移除製程氣體，而且亦可設置鄰近U形體的腳部之頂部。將排氣管設置在U形體的腳部中可提供便利維護。排氣管可具有需要定期維護的泵和洗滌器。此外，如果由於沒有諸如基板操縱機器人及/或匣盒操縱器之類的關鍵部件，此設備的背面存在空間而需調整或延長排氣管，則這樣的置放提供靈活性。
容納有基板操縱機器人35的基板操縱室37可為微環境外殼體。基板操縱室37可具有氣體入口39以及氣體抽出器41，其可流體連通泵，以提供氣流流過基板操縱室37。氣體入口39和氣體抽出器41可構造及配置成在基板操縱室37中產生水平氣流。
或者，氣體入口39可設置在氣體抽出器41的下方以在基板操縱室37中產生(部分)向下流動。向下流動可為較佳的，因為使用向下流動可有最小化顆粒污染。
基板操縱機器人35可構造及配置成沿著第一方向將基板運送到處理模組49之一者，而且沿著第二方向將基板運送到處理模組49之另一者。第一和第二方向可具有彼此90度至180度的角度，較佳地是110度至130度，而且最佳地是約120度。
基板操縱機器人35可構造及配置成沿著第三方向將基板運送到匣盒站15(在第1A圖中)。第一、第二和第三方向彼此可具有90度至180度的角度，較佳地是110度至130度，而且最佳地是約120度。
第2圖顯示根據進一步實施例之熱爐的示例之示意 性頂視圖，熱爐可包括殼體2，殼體2具有由兩個側壁5連接的前壁4及後壁6。熱爐1可具有匣盒操縱器7，匣盒操縱器7具有匣盒操縱器臂9，其配置以在匣盒儲存轉盤、相鄰於熱爐1的殼體2的前壁4的匣盒進出埠11及/或匣盒站15之間運送匣盒C。匣盒操縱器7可包括升降機構，以到達在不同高度處的匣盒。
可設置用於分隔匣盒操縱器7和基板操縱機器人35的內壁19。此壁可具有相鄰於匣盒站15的可關閉基板進出口33，其可構造及配置成亦打開匣盒C。匣盒站15可具有匣盒轉盤16，以轉動匣盒C及/或壓下可關閉基板進出口33。
基板處理設備可包括具有基板操縱臂36之基板操縱機器人35，以運送基板。可將基板從位於匣盒站15上的匣盒C藉由可關閉基板進出口33運送到在基板裝載站38處的基板晶舟B，反之亦然。基板裝載站38可構造及配置有晶舟支撐件，以支撐具有基板的晶舟。熱爐可包括容納有基板操縱機器人35之基板操縱室37。
殼體2可具有在熱爐1的整個長度上延伸的第一和第二側壁5。可界定設備的寬度之熱爐的側壁5之間的距離介於1.3和2公尺之間，較佳地介於1.5和1.8公尺之間，而且最佳地介於1.6和1.7公尺之間，例如約1.65公尺。可從熱爐的後側6或前側4施行熱爐1的維護，因此使得側壁5可以不需要有門。因此，側壁5可構造成沒有可供維護的主要門。因此，多個熱爐1可並排置放在半導體製造廠的無塵室中。藉此，相鄰熱爐的側壁5可非常靠近置放，或甚至彼此抵靠在一起。
有利地，多個熱爐的前側4可形成一壁部，此壁部可在對顆粒具有非常嚴格要求的所謂「無塵室」的非常潔淨環境中連接匣盒運送裝置。相鄰熱爐的後側6可連接對顆粒的要求不如前側4嚴格的維護通道。維護通道可用於從熱爐1的後側進行維護。
熱爐1可具有第一和第二反應器(第2圖未示出，但相同於第1B圖和第1C圖所示)，而且具有第一和第二升降機46，第一和第二升降機46配置以在下部區域(在第2圖未示出，但相同於第1B圖和第1C圖所示)與反應器之間運送具有多個基板的晶舟。每個升降機46可包括晶舟支撐臂48，晶舟支撐臂具有配置以如同晶舟支撐件而作用的支承面而且可沿著垂直方向移動。反應器和升降機46可設置在處理模組中。
處理模組49中可設置冷卻站47，冷卻站47構造及配置成有晶舟支撐件以支撐具有基板的晶舟，以冷卻具有經處理基板的晶舟。
處理模組49中可設置晶舟運送裝置50，以在第一和第二升降機46、基板裝載站38和冷卻站47之間運送具有基板的晶舟。晶舟運送裝置50可構造及配置成在下部區域內的複數個晶舟位置之間運送晶舟B，同時保持晶舟B垂直。運送可為實質上水平。
晶舟運送裝置50可包括三個晶舟運送機器人61、62、63。每個晶舟運送機器人可具有單一晶舟運送臂51。晶舟運送臂51可旋轉以在基板裝載站38、升降機46之一者及/或冷卻站47之間水平運送晶舟。基板裝載站38、升降機46或冷卻站47可在例如數 公分的短距離垂直移動，以從晶舟運送臂51的固持器處拾取晶舟或放下晶舟。基板裝載站38的晶舟支撐件和冷卻站47可具有可移動頂面，以拾取晶舟或放下晶舟B。晶舟運送臂51可具有固持器以固持晶舟。固持器可垂直固持晶舟B。在熱爐1中可同時使用多個晶舟，例如2、3或4個晶舟B。
基板裝載站38和冷卻站47可構造及配置在第一和第二升降機46的相對側上，以保持熱爐1的寬度受限。基板裝載站38可構造及配置在第一和第二升降機46的前方。冷卻站47可構造及固定配置在第一和第二升降機46的後方。
冷卻站47可用於冷卻具有剛處理過的熱的基板的晶舟。冷卻站47可具有構造及配置成抽出熱氣體以冷卻基板之氣體抽出器。冷卻站47可具有氣體入口以將氣體提供至冷卻站47。此設備可包括兩個冷卻站47。在頂視圖中的基板處理設備可構造成實質U形體(參見第2圖)。
晶舟運送裝置50和反應器可構造及配置在U形體的底部。維護區域43可構造及配置在U形體的腳部之間。U形體的兩個腳部之間的距離可介於60和120公分之間，較佳地介於80和100公分之間，而且最佳地約90公分，以允許維護人員有足夠空間。後門41可設置在U形體的腳部之間，以當不使用時關閉維護區域43。實質U形體亦可包括一V形體。
此設備可構造及配置成允許維護人員從維護區域43到第一和第二反應器兩者進行維護。例如，為了由維護人員維護加 熱絲、加熱感測器及/或反應器的製程氣體介面(出口及/或入口)。兩個反應器可構造及配置相鄰於相同維護區域43，以允許從相同維護區域43維護兩反應器。維護門41可設置以允許進行維護。維護門可設置在冷卻站的後方，以允許從設備的背面進行維護。
因此，維護人員可不需要進入熱爐1的殼體2中對反應器進行維護工作。維護人員受傷及/或下部區域及/或反應器受污染的風險因此可最小化。從殼體外部進行維護亦可提高維護的速度及/或準確性。藉由使用兩個反應器的相同維護區域43，可減少包括有維護區域43的熱爐1的總佔用面積。
處理模組49可具有可沿著維護區域43的方向可開啟的維護門41。處理模組49可具有單獨維護門41，以允許維護人員從相同維護區域43維護每個反應器。處理模組49的維護門41亦可允許從相同維護區域43維護熱爐的下部區域，以維護晶舟運送裝置50、冷卻站47、進氣口、氣體抽出器、升降機46、基板裝載站38及/或晶舟B。
或者，每個處理模組49可設置兩維護門。例如，頂部維護門用於進入反應器，而底部維護門用於進入熱爐1的下部區域。
反應器45可具有可連接到排氣管或製程氣體輸送系統之製程氣體介面(出口及/或入口)。製程氣體介面可設置相鄰於維護區域43，使得在維護期間使其可易於進入。
製程氣體輸送系統可(部分)設置在構造及配置成提 供製程氣體至第一及/或第二反應器45的氣櫃67。氣櫃可設置鄰近U形體的腳部之頂部。將氣櫃設置鄰近U形體的頂部提供便利維護。此外，如果由於沒有諸如基板操縱機器人及/或匣盒操縱器之類的關鍵部件，設備的背面存在空間而需調整或延長氣櫃，則這樣的置放提供靈活性。
排氣管可構造及配置成從第一和第二反應器之至少一者移除製程氣體，而且亦可設置鄰近U形體的腳部之頂部。將排氣管設置在U形體的腳部中可提供便利維護。排氣管可具有需要定期維護的泵和洗滌器。此外，如果由於沒有諸如基板操縱機器人及/或匣盒操縱器之類的關鍵部件，設備的背面存在空間而需調整或延長排氣管，則這樣的置放提供靈活性。
雖然上面已部分參考附圖描述本揭露的示意性實施例，但是應瞭解，本揭露並未受限於這些實施例。實踐所請求發明的熟習此項技藝者將可從附圖、揭露內容和文後申請專利範圍來瞭解及實現所揭露實施例的變型。
在整個說明書的參考中，「一實施例」意指結合實施例描述的特定特徵、結構或特性係被包括在本揭露的至少一實施例中。因此，在整個說明書中不同地方出現的語句「在一實施例中」不必然全都指相同實施例。此外，應注意，一或多個實施例的特定特徵、結構、或特性可採取任何適當方式組合形成新穎、未明確描述的實施例。
1:熱爐
2:殼體
4:前壁
5:側壁
6:後壁
7:匣盒操縱器
9:匣盒操縱器臂
11:匣盒進出埠
15:匣盒站
16:匣盒轉盤
19:內壁
33:基板進出口
35:基板操縱機器人
36:基板操縱臂
38:基板裝載站
39:氣體入口
41:維護門
43:維護區域
45:反應器/第一反應器/第二反應器
47:冷卻站
49:處理模組
67:氣櫃
B:晶舟
C:晶圓匣盒

Claims (19)

  1. 一種基板處理設備，包括：一第一反應器和一第二反應器，處理在一晶舟中的複數個基板；一第一升降機和一第二升降機，分別將具有該等基板的該晶舟於該第一反應器和該第二反應器來回運送；一第一冷卻站及一第二冷卻站；一基板操縱機器人，構造及配置成在一基板裝載站處的該晶舟和一基板匣盒之間運送該等基板；以及一晶舟運送裝置，以在該基板裝載站、該第一升降機、該第二升降機及該第一冷卻站及該第二冷卻站中至少一冷卻站之間運送具有該等基板的該晶舟，其中該第一冷卻站及該第二冷卻站構造及配置成冷卻具有該等經處理基板的該晶舟，而且該設備構造及配置成使該基板裝載站和該冷卻站在該第一升降機和該第二升降機的相對側上；其中該晶舟運送裝置包括一第一晶舟運送機器人、一第二晶舟運送機器人及一第三晶舟運送機器人，其中該第一晶舟運送機器人配置以於該第一升降機及該第一冷卻站之間運送該晶舟，其中該第二晶舟運送機器人配置以於該第二升降機及該第二冷卻站之間運送該晶舟，且其中該第三晶舟運送機器人配置以於該基板裝載站及該第一升降機之間和該基板裝載站及該第二升降機之間運送該晶舟。
  2. 如請求項1所述之基板處理設備，其中該第一升降機和該第二升降機、該基板裝載站和該第一冷卻站及該第二冷卻站之至少一者包括構造及配置成支撐具有該等基板的該晶舟之一晶舟 支撐件。
  3. 如請求項2所述之基板處理設備，其中該晶舟支撐件構造及配置成沿著一水平面而靜止。
  4. 如請求項2所述之基板處理設備，其中該晶舟支撐件是該第一升降機或該第二升降機之一部分，而且該晶舟支撐件構造及配置成可沿著一垂直方向移動。
  5. 如請求項1所述之基板處理設備，其中該第一冷卻站及該第二冷卻站構造及配置以冷卻該等經處理基板的該晶舟，包含一氣體入口以及一氣體抽出器，該氣體入口構造及配置以提供氣體以冷卻該基板，該氣體抽出器構造及配置以抽出該氣體，其中該氣體入口及該氣體抽出器定位在該等冷卻站中至少一者附近，且在該等冷卻站中至少一者的相對側上。
  6. 如請求項5所述之基板處理設備，更包括：一維護門，設置在該第一冷卻站及該第二冷卻站中至少一者的後方，以允許從該設備的背面進行維護。
  7. 如請求項5所述之基板處理設備，其中該氣體入口及該氣體抽出器定位以在該氣體入口及該氣體抽出器之間產生向下流動；其中該基板裝載站定位在該第一升降機和該第二升降機的前方，而且該第一冷卻站及該第二冷卻站分別在該第一升降機和該第二升降機的後方；以及其中該等冷卻站固定在一水平位置，以在該基板操縱機器人操作期間及該晶舟運送裝置操作期間，保持水平地靜止且從該第一反應器和該第二反應器、該第一升降機和該第二升降機及該晶舟運送裝 置分別水平地間隔分開，以在該基板裝載站處的該晶舟和該基板匣盒之間運送該等基板，且在該基板裝載站及該第一升降機和該第二升降機中至少一者之間運送該晶舟。
  8. 如請求項1所述之基板處理設備，其中該設備包括兩個基板裝載站，而且該基板操縱機器人構造及配置成在該等基板裝載站之一者處的該晶舟與該基板匣盒之間運送該等基板。
  9. 如請求項1所述之基板處理設備，其中在頂視圖中的該基板處理設備係配置成一實質U形體，而且在該U形體的一腳部之一頂部中設置構造及配置成提供製程氣體至該第一反應器和該第二反應器之至少一者之一氣櫃。
  10. 如請求項9所述之基板處理設備，其中一維護區域配置在該U形體的該腳部之間。
  11. 如請求項1所述之基板處理設備，其中該設備包括一殼體，該殼體具有一前壁及一後壁，連接到在該設備的整個長度上延伸的一第一側壁和一第二側壁，其中該第一側壁或該第二側壁未設置門。
  12. 如請求項1所述之基板處理設備，其中該設備的寬度為介於1.3和2公尺之間，較佳地介於1.5和1.8公尺之間，而且更佳地介於1.6和1.7公尺之間。
  13. 如請求項1所述之基板處理設備，其中該晶舟運送裝置包括具有一晶舟支撐件之一可移動晶舟支撐臂，該晶舟支撐件配置以支撐該晶舟，而且構造及配置成可沿著一水平方向移動。
  14. 如請求項13所述之基板處理設備，其中該晶舟運送裝置包括具有支承面的多個可移動晶舟支撐臂，該支承面配置以 支撐該晶舟。
  15. 如請求項13所述之基板處理設備，其中該晶舟支撐臂可轉動地安裝於一樞軸點，以允許該晶舟支撐件可沿著一水平方向移動。
  16. 如請求項1所述之基板處理設備，其中一閘閥設置在該基板操縱機器人與該第一升降機和該第二升降機之至少一者之間，以產生一微環境。
  17. 如請求項16所述之基板處理設備，其中該微環境可具有一氣體入口及一氣體抽出器，其流體連通一泵，以提供通過該微環境的一氣流。
  18. 如請求項1所述之基板處理設備，其中該設備構造及配置成同時在兩個和四個晶舟之間處理。
  19. 如請求項1所述之基板處理設備，其中該設備包括一匣盒操縱器，該匣盒操縱器具有一匣盒操縱器臂，該匣盒操縱器臂配置以在一匣盒站、一匣盒進出埠及/或一匣盒儲器之間運送匣盒，並使用一升降機構而可上下移動，而且該匣盒儲器包括用於支撐匣盒的複數個平台檯階，每個平台檯階包括在其中的至少一切口，該切口經尺寸和形狀設計成允許該匣盒操縱器臂垂直通過其中並允許該平台檯階在其上支撐該匣盒，而且該設備包括用於分隔該匣盒操縱器和該基板操縱機器人的一壁部，該壁部具有相鄰於該匣盒站的一可關閉基板進出口。
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Families Citing this family (227)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
TWI791689B (zh) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 包括潔淨迷你環境之裝置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
CN112292478A (zh) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11915960B2 (en) * 2019-07-31 2024-02-27 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) * 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
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JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
CN113555279A (zh) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 形成含氮化钒的层的方法及包含其的结构
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
JP7408853B1 (ja) 2023-01-26 2024-01-05 東京エレクトロン株式会社 基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140148924A1 (en) * 2012-11-29 2014-05-29 Asm Ip Holding B.V. Scheduler for processing system
WO2018003072A1 (ja) * 2016-06-30 2018-01-04 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020019414A (ko) * 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
US6732006B2 (en) * 2002-02-06 2004-05-04 Asm International Nv Method and system to process semiconductor wafers
WO2018167846A1 (ja) * 2017-03-14 2018-09-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140148924A1 (en) * 2012-11-29 2014-05-29 Asm Ip Holding B.V. Scheduler for processing system
WO2018003072A1 (ja) * 2016-06-30 2018-01-04 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体

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