TWI817015B - 金被覆接合線及其製造方法、半導體線接合構造及半導體裝置 - Google Patents

金被覆接合線及其製造方法、半導體線接合構造及半導體裝置 Download PDF

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TWI817015B
TWI817015B TW109119393A TW109119393A TWI817015B TW I817015 B TWI817015 B TW I817015B TW 109119393 A TW109119393 A TW 109119393A TW 109119393 A TW109119393 A TW 109119393A TW I817015 B TWI817015 B TW I817015B
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wire
gold
bonding
electrode
semiconductor
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TW109119393A
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Chinese (zh)
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TW202139306A (zh
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安徳優希
川野将太
﨑田雄祐
平井祐佳
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日商田中電子工業股份有限公司
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
TW109119393A 2020-04-10 2020-06-10 金被覆接合線及其製造方法、半導體線接合構造及半導體裝置 TWI817015B (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201250013A (en) * 2011-06-15 2012-12-16 Tanaka Electronics Ind High strength and high elongation ratio of Au alloy bonding wire
JP2019504472A (ja) * 2015-11-23 2019-02-14 ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー 被覆ワイヤ
WO2019193771A1 (ja) * 2018-04-02 2019-10-10 田中電子工業株式会社 ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
JPH05198931A (ja) * 1992-01-20 1993-08-06 Fujitsu Ltd ワイヤボンディング方法
JP2003133361A (ja) * 2001-10-23 2003-05-09 Sumiden Magnet Wire Kk ボンディングワイヤー
JP2007012776A (ja) 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP4722671B2 (ja) 2005-10-28 2011-07-13 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US9059003B2 (en) 2012-02-27 2015-06-16 Nippon Micrometal Corporation Power semiconductor device, method of manufacturing the device and bonding wire
JP5159000B1 (ja) * 2012-06-13 2013-03-06 田中電子工業株式会社 半導体装置接続用アルミニウム合金細線
SG11201604437RA (en) * 2015-02-26 2016-09-29 Nippon Micrometal Corp Bonding wire for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201250013A (en) * 2011-06-15 2012-12-16 Tanaka Electronics Ind High strength and high elongation ratio of Au alloy bonding wire
JP2019504472A (ja) * 2015-11-23 2019-02-14 ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー 被覆ワイヤ
WO2019193771A1 (ja) * 2018-04-02 2019-10-10 田中電子工業株式会社 ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法

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CN115398607A (zh) 2022-11-25
TW202139306A (zh) 2021-10-16

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