TWI536476B - Connecting wire for semiconductor device and method for manufacturing the same - Google Patents

Connecting wire for semiconductor device and method for manufacturing the same Download PDF

Info

Publication number
TWI536476B
TWI536476B TW104110541A TW104110541A TWI536476B TW I536476 B TWI536476 B TW I536476B TW 104110541 A TW104110541 A TW 104110541A TW 104110541 A TW104110541 A TW 104110541A TW I536476 B TWI536476 B TW I536476B
Authority
TW
Taiwan
Prior art keywords
wire
heat treatment
less
ratio
bonding
Prior art date
Application number
TW104110541A
Other languages
English (en)
Other versions
TW201603151A (zh
Inventor
Takashi Yamada
Daiso Oda
Ryo Oishi
Teruo Haibara
Tomohiro Uno
Original Assignee
Nippon Micrometal Corp
Nippon Steel & Sumikin Mat Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54240512&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI536476(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Micrometal Corp, Nippon Steel & Sumikin Mat Co filed Critical Nippon Micrometal Corp
Publication of TW201603151A publication Critical patent/TW201603151A/zh
Application granted granted Critical
Publication of TWI536476B publication Critical patent/TWI536476B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20108—Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20109—Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/2011—Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20111—Temperature range 450 C=<T<500 C, 723.15K =<T< 773.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)

Description

半導體裝置用接合導線及其製造方法
本發明係關於一種半導體裝置用接合導線，尤其是關於一種含有Ag或Ag合金之半導體裝置用接合導線及其製造方法。
半導體裝置係藉由如下方式形成：於電路配線基板(引線框架、基板、膠帶等)載置半導體元件，利用半導體裝置用接合導線(以下亦簡稱為「接合導線」)將半導體元件上之電極與電路配線基板上之電極之間連接。
作為半導體裝置用接合導線，使用線徑為20~50μm左右之細金屬線。接合導線之一端係於使用超音波併用熱壓接方式將導線之前端加熱熔融而形成球之後，將該球部壓接接合至半導體元件之電極上。導線之另一端係藉由超音波壓接而接合至電路配線基板之電極上。
作為接合導線用素材，先前一直使用高純度Au(金)或Au合金。然而，由於Au價格高，故而期望材料費用較低之其他種類之金屬。作為代替Au之低成本之導線素材，研究有Cu(銅)。與Au相比，Cu易被氧化，因此於專利文獻1中，揭示有如下之例：作為芯材與被覆層(外周部)之2層接合導線，於芯材使用Cu，於被覆層使用Pd(鈀)。又，於專利文獻2中，揭示有如下一種接合導線，該接合導線具有：芯材，其含有Cu或Cu合金；被覆層，其於該芯材之表面以Pd為主成分；及合金層，其於該被覆層之表面含有Au及Pd。
Cu導線或者Pd被覆Cu導線因接合後之硬度較高，故而要求硬度 更低之材料。作為具有與Au同等以上之導電性、硬度低於Cu之元素且進而具有耐氧化性之元素，可列舉Ag(銀)。
於專利文獻3中，揭示有一種以Ag為主體之Ag-Au-Pd三元合金系接合導線。該接合導線係於連續模拉線前被進行退火熱處理，於連續模拉線後被進行調質熱處理，且於氮氣氛圍中進行球形接合。藉此，即便於高溫、高濕及高壓下之嚴酷之使用環境下使用，亦可維持與鋁墊之連接可靠性。
於專利文獻4中，揭示有一種以Ag為主體之Ag-Au、Ag-Pd、Ag-Au-Pd合金線材。合金線材之中心部包含細長之晶粒或等軸晶粒，合金線材之其他部分包含等軸晶粒，包含退火雙晶之晶粒為總量之20%以上。其目的在於，提高封裝體製品之品質及可靠性。
正在推進鄰接之接合導線之間隔變窄之窄間距化。作為與此對應之對接合導線之要求，要求細線化、高強度化、迴路控制、接合性之提高等。迴路形狀因半導體安裝之高密度化而複雜化。作為迴路形狀之分類，迴路高度、接合之導線長度(跨距)成為指標。於最新之半導體中，在一個封裝體內部混載高迴路與低迴路、短跨距與長跨距等相反之迴路形成之情況增多。為了利用1種接合導線實現該情況，需要嚴格之接合導線之材料設計。
期望作為於量產中使用之導線特性，滿足接合步驟中之迴路控制穩定、接合性亦提高、於樹脂密封步驟中抑制導線變形、連接部之長期可靠性等綜合特性，藉此可應對最前端之窄間距連接、積層晶片連接等高密度安裝。
[先前技術文獻] [專利文獻]
[專利文獻1]再公表WO2002-23618公報
[專利文獻2]日本專利特開2011-77254號公報
[專利文獻3]日本專利第4771562號公報
[專利文獻4]日本專利特開2013-139635號公報
因多接腳、窄間距化而進行於一個IC(integrated circuit，積體電路)內混載導線長度、迴路高度不同之導線連接。若進行窄間距化，則存在產生球直立部之偏斜(leaning)不良之情況。所謂偏斜不良係球形接合附近之導線直立部傾斜而鄰接導線之間隔接近之現象。尋求一種改善偏斜不良之導線材料。
又，於積層晶片連接中，有時彈性不良成為問題。於積層晶片之導線連接中，較多地使用接合位置與通常之導線接合反轉之被稱為反接合之連接。所謂反接合係如下方法：於第一階段中在晶片上之電極形成柱形凸塊，於第二階段中在基板之電極上接合球部，且將接合導線楔形接合至上述柱形凸塊上。藉由該反接合，可將迴路高度抑制得較低，並且於晶片積層數增加而階差相當高之情形時，亦可實現穩定之迴路控制。另一方面，於該反接合中，存在產生接合導線彎曲之彈性不良之情況。於記憶體IC中，積層晶片正成為主流，而期待減少該彈性不良。
Ag含量為90質量%以上之Ag或Ag合金(於本說明書中，稱為「Ag或Ag合金」)之接合導線(於本說明書中，存在稱為「導線」之情形)由於硬度較低，故而不易引起晶片損傷。因此，多被用於反接合。另一方面，如上所述，於反接合中易引起彈性不良。又，因Ag或Ag合金導線之硬度較低而導致易產生偏斜不良。
於Ag或Ag合金導線中，雖存在改善偏斜不良與彈性不良中之任一者之方法，但難以同時改善偏斜不良與彈性不良。本發明之目的在於提供一種偏斜不良與彈性不良均得到改善之含有Ag或Ag合金之半 導體裝置用接合導線及其製造方法。
即，本發明之主旨如下。
(1)一種半導體裝置用接合導線，其特徵在於：其係Ag含量為90質量%以上者，且於包含導線中心且平行於導線長度方向之剖面(以下稱為「導線中心剖面」)中，不存在長徑a與短徑b之比a/b為10以上且面積為15μm2以上之晶粒(以下稱為「纖維狀組織」)，測定上述導線中心剖面之導線長度方向之結晶方位，結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為50%以上且90%以下，測定導線表面之導線長度方向之結晶方位，結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為50%以上且90%以下。
(2)如上述(1)之半導體裝置用接合導線，其特徵在於：上述半導體裝置用接合導線含有Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni中之1種以上，於含有Pd、Cu、Au、Zn之情形時，其等之合計為0.01~8質量%，於含有Pt、Ge、Sn、Ti、Ni之情形時，其等之合計為0.001~1質量%，剩餘部分為Ag及雜質。
(3)如上述(1)或(2)之半導體裝置用接合導線，其特徵在於：上述雜質中所包含之S為1質量ppm以下，Cl為0.5質量ppm以下。
(4)一種半導體裝置用接合導線之製造方法，該半導體裝置用接合導線係如上述(1)至(3)中任一項者，上述半導體裝置用接合導線之製造方法之特徵在於：具有進行1次以上之拉線加工之拉線步驟，於拉線步驟中，具有至少1次縮面率為15.5~30.5%之拉線加工，於拉線步驟之中途進行1次以上之熱處理，於拉線步驟結束後進 行最終熱處理，即將進行最終熱處理前之熱處理之溫度為600℃以上且800℃以下，最終熱處理之溫度為300℃以上且未達600℃。
本發明係對於Ag或Ag合金接合導線，設為於導線中心剖面不存在纖維狀組織，剖面<100>方位比率為50%以上且90%以下，表面<100>方位比率為50%以上且90%以下，藉此，可同時改善偏斜不良與彈性不良。於拉線步驟中，進行至少1次縮面率為15.5~30.5%之拉線加工，於拉線步驟結束後進行熱處理(最終熱處理)，並且於拉線步驟之中途進行1次以上之熱處理，將即將進行最終熱處理前之熱處理(最終前熱處理)溫度設為600℃以上且800℃以下，將最終熱處理溫度設為300℃以上且未達600℃，藉此可形成上述結晶組織。
若以觀察面之形狀區分於Ag或Ag合金接合導線中可看到之結晶組織，則可分為將相鄰之結晶方位之角度差為15度以上之情形定義為晶界時之、晶粒之長徑a與短徑b之比(a/b)接近於1之形狀之結晶、及a/b之值較大之細長形狀之結晶。a/b接近於1之結晶亦被稱為等軸晶。此處，將a/b為10以上且觀察面中之晶粒之面積為15μm2以上之晶粒定義為「纖維狀組織」。
對於Ag或Ag合金接合導線，若於包含導線中心(導線中心軸)且平行於導線長度方向之剖面(於本說明書中，稱為導線中心剖面，即，為包含導線中心軸之導線剖面)進行觀察，則於導線中心軸附近觀察到上述所定義之纖維狀組織之情況較多。於專利文獻4中被稱為細長之晶粒18之結晶相當於纖維狀組織(參照該文獻之圖1B)。除纖維狀組織以外之部分為a/b接近於1之晶粒。
可對顯現於觀察面之各結晶組織計測<100>方位。選擇上述導線中心剖面作為觀察面，測定上述導線中心剖面之導線長度方向之結晶方位，結果以面積率表示相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率，命名為「剖面<100>方位比率」。又，選擇導線表面作為觀察面，測定上述導線表面之導線長度方向之結晶方位，結果以面積率表示相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率，命名為「表面<100>方位比率」。
於本發明中，對於Ag或Ag合金接合導線，於在導線中心剖面不存在纖維狀組織，剖面<100>方位比率為50%以上且90%以下，且表面<100>方位比率為50%以上且90%以下時，可抑制偏斜不良與彈性不良。又，若將剖面<100>方位比率與表面<100>方位比率均設為90%以下且同時不存在纖維狀組織，則可抑制彈性不良。又，若將表面<100>方位比率設為50%以上，則可抑制偏斜不良。然而，若剖面<100>方位比率未達50%，則存在產生偏斜不良之情況，因此剖面<100>方位比率係設為50%以上。
於在導線中心剖面存在纖維狀組織之情形時，根據導線之長度方向而形成存在纖維狀組織之部分與不存在纖維狀組織之部分，根據各者之部位不同而2nd接合(楔形接合)部之破斷強度不同，故而存在2nd接合不穩定，而產生彈性不良之情況。然而，本發明係藉由不存在纖維狀組織，而能夠抑制彈性不良之產生。
本發明係於剖面<100>方位比率與表面<100>方位比率均為50%以上且90%以下、即兩者之比率為相同程度且為一定比率(90%)以下時，2nd接合部之破斷強度為適度之大小，進而微米部位之差變小，因此變得不易產生彈性不良。
又，若表面<100>方位比率過低，則球頸部變得易於向橫向變 形，故而易於產生偏斜不良，但藉由將表面<100>方位比率設為50%以上，可抑制偏斜不良產生。
接合導線係藉由拉線加工而製造。拉線加工係使線材通過孔模1次以上而使素材之剖面面積變小之加工。準備線徑為數mm之素材，反覆進行冷拉線加工，藉此依序使線徑變細，而形成作為目標之線徑之接合導線。通常，將每一行程(每通過1次孔模)之縮面率設為1~15%。有時於拉線步驟之中途、或者拉線步驟結束後進行熱處理。
若使用Ag或Ag合金素材進行通常之拉線加工，則會於導線之中心形成纖維狀組織。又，因拉線加工中之冷變形而導致導線表面之結晶方位受影響，從而表面<100>方位比率變高。
可藉由拉線加工後之熱處理使導線中心之纖維狀組織消失。然而，若欲藉由熱處理使纖維狀組織消失，則需要超過800℃之高溫熱處理，進行熱處理之結果為，構成導線之結晶之結晶方位無規化，表面<100>方位比率下降，難以實現表面<100>方位比率為50%以上。
於本發明中，對拉線加工之縮面率施以研究，並且限定在拉線中途及拉線步驟結束後進行之熱處理之方式，藉此可實現不存在纖維狀組織，同時剖面<100>方位比率為50%以上且90%以下，表面<100>方位比率設為50%以上且90%以下。而且，藉此可同時抑制偏斜不良與彈性不良。
即，具有對Ag或Ag合金素材進行1次以上之拉線加工之拉線步驟，於拉線步驟中，進行至少1次縮面率為15.5~30.5%之拉線加工。進而，於拉線步驟之中途進行1次以上之熱處理，於拉線步驟結束後，亦進行熱處理(最終熱處理)。將即將進行最終熱處理前之熱處理(最終前熱處理)溫度設為600℃以上且800℃以下，將最終熱處理溫度設為300℃以上且未達600℃，藉此可製成於導線中心剖面不存在纖維 狀組織、且表面<100>方位比率與剖面<100>方位比率為上述本發明之較佳之範圍的Ag或Ag合金接合導線。藉由進行至少1次縮面率為15.5~30.5%之拉線加工，可實現纖維狀組織較通常少之結晶組織，藉由其後之熱處理而纖維狀組織變得易於消失。將最終熱處理溫度設為300℃以上之原因在於，藉此可將剖面<100>方位比率設為本發明之上限以下，將最終熱處理溫度設為未達600℃之原因在於，藉此可將剖面<100>方位比率設為本發明之下限以上。將最終前熱處理溫度設為600℃以上係為了使導線整體再結晶化，將最終前熱處理溫度設為800℃以下係為了抑制局部地成長粗大之晶粒。
對於進行縮面率為15.5~30.5%之拉線加工之時期並無特別限定，既可於最終前熱處理之前進行，亦可於最終前熱處理之後進行。較佳為設為於即將進行最終前熱處理前進行、或於剛進行過最終前熱處理後立即進行。
對於進行最終前熱處理之後之拉線加工，該拉線加工期間之總縮面率、行程次數均無限定。較佳為將總縮面率設為95%以下。若如此，則可藉由最終熱處理相對較容易地獲得所期望之結晶組織。
對於在最終前熱處理之前進行之拉線加工，該拉線加工期間之總縮面率、行程次數亦均無限定。又，是否於最終前熱處理之前進行熱處理亦無限定。對於進行熱處理之情形時之熱處理溫度等亦無特別限定。
本發明之接合導線係藉由使用Ag含量為90質量%以上之Ag或Ag合金作為素材而能夠充分地發揮效果。若Ag含量少於90質量%，則比電阻會變得過高，而不適合用作接合導線。作為除Ag以外之組成，可含有與Ag製成固溶體且於拉線步驟中不易斷線之成分、例如Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni。
又，本發明之接合導線含有以下之選擇成分，且剩餘部分設為 含有Ag及雜質之Ag合金，藉此，可發揮優異之效果。
作為評估接合導線之長期可靠性之方法，除了最多地利用之加熱試驗即乾燥氛圍中之高溫保管評估以外，作為通常之高濕加熱評估而進行PCT試驗(壓力鍋試驗)。最近，作為高濕加熱評估，要求於進一步嚴格之HAST試驗(High Accelerated Temperature and humidity Stress Test，高加速溫度和濕度應力試驗)(溫度為130℃，相對濕度為85%RH(Relative Humidity)，5V)中不會產生不良。於本發明中，作為導線之成分組成，含有總計為0.01質量%以上之Pd、Cu、Au、Zn中之至少1種以上，藉此可於HAST試驗中獲得良好之高濕加熱評估結果。另一方面，若Pd、Cu、Au、Zn之含量總計超過8質量%，則導線本身之強度會提昇，故而2nd接合部之破斷強度亦提昇而變得易於產生彈性不良，故而將含量合計設為8質量%以下。
於本發明中，進而，作為導線之成分組成，含有總計為0.001質量%以上之Pt、Ge、Sn、Ti、Ni中之至少1種以上，藉此具有使1st接合之球形狀良好之效果。另一方面，若Pt、Ge、Sn、Ti、Ni之含量總計超過1質量%，則導線本身之強度會提昇，故而2nd接合部之破斷強度亦提昇而變得易於產生彈性不良，故而較佳為將含量合計設為1質量%以下。
於本發明中，進而，將於導線中作為雜質而包含之S含量設為1質量ppm以下，且將作為雜質而包含之Cl含量設為0.5質量ppm以下，藉此可使1st接合之FAB(Free Air Ball，無空氣焊球)形狀良好。
本發明之接合導線之製造方法係如上所述。即，使用含有上述本發明之成分之Ag或Ag合金素材進行拉線加工，於拉線步驟中進行至少1次縮面率為15.5~30.5%之拉線加工，於拉線步驟結束後進行熱處理(最終熱處理)，並且於拉線步驟之中途進行1次以上之熱處理，將最終前熱處理(即將進行最終熱處理前之熱處理)溫度設為600℃以 上且800℃以下，將最終熱處理溫度設為300℃以上~未達600℃。藉此，可製成於導線中心剖面不存在纖維狀組織且剖面<100>方位比率為50%以上且90%以下、表面<100>方位比率為50%以上且90%以下之Ag或Ag合金接合導線。
[實施例]
作為接合導線之原材料，對作為主成分之Ag使用純度為99.99質量%以上之高純度之素材，對作為添加元素之Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni之原材料使用純度為99.9質量%以上之素材。對於含有作為雜質元素之S、Cl之位準係有意圖地含有S、Cl。
於製成含有特定成分之Ag或Ag合金後，藉由連續鑄造而製成數mm之線徑之素材，繼而，進行藉由冷模引伸之拉線加工及熱處理。關於拉線加工之縮面率，於本發明例之全部及比較例之一部分中賦予於中途之1~10行程中將縮面率設為15.5~30.5%之步驟，於除此以外之行程中將縮面率設為5.5%~15.0%。將縮面率設為15.5%以上之行程係設為剛進行過最終前熱處理之後。將拉線加工結束後之最終線徑設為15~25μm。
作為拉線前後之熱處理，係進行於拉線步驟結束後進行之最終熱處理、於拉線步驟中途進行之熱處理中之於即將進行最終熱處理前進行之最終前熱處理。於最終前熱處理中，本發明例之全部與比較例之一部分係將最終前熱處理溫度設為600℃以上且800℃以下。關於最終熱處理，本發明例之全部與比較例之一部分係將最終熱處理溫度設為300℃以上且未達600℃。將自最終前熱處理至拉線結束為止之合計縮面率設為80~90%。
[接合導線之含有成分分析]
接合導線中之含有成分(除雜質以外)之濃度係藉由ICP(Inductively Coupled Plasma，感應耦合電漿)分析、ICP質譜分析等而 測定。接合導線中之雜質濃度係藉由GDMS(Glow Discharge Mass Spectrometry，輝光放電質譜)分析而測定。所謂GDMS分析係如下方法：於Ar氛圍下，將試樣作為陰極而產生輝光放電，於電漿內對試樣表面進行濺鍍，利用質譜分析計測定經離子化之構成元素。
[接合導線之結晶組織]
將包含導線中心且平行於導線長度方向之剖面(導線中心剖面)及導線表面作為觀察面，進行結晶組織之評估。作為評估方法，使用背向散射電子繞射法(EBSD，Electron Backscattered Diffraction)。EBSD法具有對觀察面之結晶方位進行觀察，並可圖示相鄰之測定點間之結晶方位之角度差的特徵，即便為如接合導線般之細線，亦可相對簡便且精度良好地觀察結晶方位。
於將如導線表面之曲面作為對象而實施EBSD法之情形時，必須加以注意。當測定曲率較大之部位時，難以實現精度較高之測定。然而，將供測定之接合導線於平面上固定於直線上，測定該接合導線之中心附近之平坦部，藉此可進行精度較高之測定。具體而言，較佳為設為如下測定區域。圓周方向之尺寸係以導線長度方向之中心為軸而設為線徑之50%以下，導線長度方向之尺寸係設為100μm以下。較佳為，只要將圓周方向之尺寸設為線徑之40%以下，且將導線長度方向之尺寸設為40μm以下，則可藉由縮短測定時間而提高測定效率。為了進一步提高精度，較理想為測定3個部位以上，獲得考慮了偏差之平均資訊。測定位置較佳為以不接近之方式相隔1mm以上。
剖面<100>方位比率及表面<100>方位比率係將藉由專用軟體(例如，TSL Solutions公司製造之OIM analysis等)而特定出之全結晶方位作為母集團，對導線長度方向之結晶方位進行測定，結果算出相對於導線長度方向角度差為15°以下之結晶方位<100>之存在比率(面積率)。對於纖維狀組織，藉由專用軟體(例如，TSL Solutions公司 製造之OIM analysis等)算出長徑a、短徑b之比a/b及晶粒之面積，按照定義對纖維狀組織之有無進行評估。
[偏斜]
於評估用引線框架，以迴路長度5mm、迴路高度0.5mm接合100根。作為評估方法，自晶片水平方向觀察導線直立部，以通過球形接合部之中心之垂線與導線直立部之間隔最大時之間隔(偏斜間隔)評估。於偏斜間隔小於導線直徑之情形時，判斷為偏斜良好，於偏斜間隔大於導線直徑之情形時，直立部傾斜，故而判斷為偏斜不良。利用光學顯微鏡觀察接合有100根之導線，並對偏斜不良之根數進行計數。將不良為0根設為◎，將不良為1~5根設為○，將不良為6根以上設為×。
[彈性]
於評估用Si晶片，以迴路長度2.5mm、迴路高度0.15mm接合100根。為了評估彈性特性，而進行將接合導線楔形接合至形成於電極上之柱形凸塊上之連接方法即反接合，並觀察接合導線彎曲之彈性不良。作為評估方法，利用光學顯微鏡觀察接合有100根之導線，並對彈性不良之根數進行計數。將不良為0根設為◎，將不良為1~3根設為○，將不良為4~5根設為△，將不良為6根以上設為×。
[HAST]
作為高濕加熱評估，進行HAST試驗。對於藉由焊線機進行接合後之半導體裝置，放置於溫度130℃、濕度85%RH、5V之環境下，每隔48小時取出一次進行評估。作為評估方法，測定電阻，並將電阻上升者設為NG(No Good，不良)。將變為NG為止之時間為480小時以上設為◎，將384小時以上且未達480小時者設為○，將288小時以上且未達384小時者設為△，將未達288小時者設為×。
[FAB偏芯]
對1st接合之FAB形狀進行評估。於評估用引線框架，利用焊線機製作100個FAB。作為評估方法，利用SEM(scanning electron microscope，掃描式電子顯微鏡)(電子顯微鏡)觀察100個FAB，將真球狀者設為OK，將偏芯、收縮設為NG，並對其數量進行計數。將NG為0個設為◎，將NG為1~5個設為○，將NG為6~10個設為△，將NG為11個以上設為×。
[壓接球形狀]
對1st接合之球形狀進行評估。於評估用Si晶片，利用焊線機接合100根。作為評估方法，利用光學顯微鏡觀察100個壓接球部，將接近於真圓者設為OK，將呈花瓣狀者設為NG，並對其數量進行計數。將NG為0個設為◎，將NG為1~5個設為○，將NG為6~10個設為△，將NG為11個以上設為×。
於上述任一評估中，◎、○、△均為合格，僅×為不合格。
將結果示於表1。對脫離本發明範圍之數值、項目標註下底線。
本發明例1~43含有本發明範圍之成分，於拉線步驟中，進行1次縮面率為15.5~30.5%之拉線加工，將最終前熱處理溫度設為600℃以上且800℃以下，將最終熱處理溫度設為300℃以上且未達600℃。其結果，可設為不存在纖維狀組織，同時剖面<100>方位比率為50%以上且90%以下，表面<100>方位比率為50%以上且90%以下。
作為導線之成分組成而含有總計為0.01質量%以上之Pd、Cu、Au、Zn中之至少1種以上之本發明例係HAST試驗結果為○或◎，可獲得特別良好之結果。作為導線之成分組成而含有總計為0.001質量%以上之Pt、Ge、Sn、Ti、Ni中之至少1種以上之本發明例係壓接球形狀為○或◎，可獲得特別良好之結果。作為導線中之雜質而S含量：1質量ppm以下、Cl含量：0.5質量ppm以下之本發明例係FAB形狀為○或◎，可獲得良好之結果。
比較例44、45係於拉線步驟中無縮面率為15.5%以上之步驟，且於導線中產生纖維狀組織，彈性評估不良。比較例46由於最終熱處理溫度較低，故而剖面<100>方位比率超出上限，彈性評估不良。比較例47由於最終熱處理溫度較高，故而剖面<100>方位比率超出下限，表面<100>方位比率未達70%，因此偏斜評估不良。比較例48由於最終前熱處理溫度較低，並且最終熱處理溫度較高，故而剖面<100>方位比率與表面<100>方位比率均超出下限，偏斜評估不良。比較例49係最終前熱處理溫度較低，並且於拉線步驟中無縮面率為15.5%以上之步驟，表面<100>方位比率較低並且存在纖維狀組織，產生有彈性不良與偏斜不良。比較例50由於最終前熱處理溫度較低，並且最終熱處理溫度較低，故而表面<100>方位比率較高，彈性評估不良。比較例51係最終前熱處理溫度較低，並且最終熱處理溫度較低，進而於拉線步驟中無縮面率為15.5%以上之步驟，剖面<100>方位比率與表面<100>方位比率均超出上限，並且存在纖維狀組織，彈性評估不良。
[產業上之可利用性]
本發明可利用於半導體。

Claims (4)

  1. 一種半導體裝置用接合導線，其特徵在於：其係Ag含量為90質量%以上者，且於包含導線中心且平行於導線長度方向之剖面即導線中心剖面中，不存在長徑a與短徑b之比a/b為10以上且面積為15μm2以上之晶粒，測定上述導線中心剖面之導線長度方向之結晶方位，結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為50%以上且90%以下，測定導線表面之導線長度方向之結晶方位，結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為50%以上且90%以下。
  2. 如請求項1之半導體裝置用接合導線，其中上述半導體裝置用接合導線含有Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni中之1種以上，於含有Pd、Cu、Au、Zn之情形時，其等之合計為0.01~8質量%，於含有Pt、Ge、Sn、Ti、Ni之情形時，其等之合計為0.001~1質量%，剩餘部分為Ag及雜質。
  3. 如請求項1或2之半導體裝置用接合導線，其中上述雜質中所包含之S為1質量ppm以下，Cl為0.5質量ppm以下。
  4. 一種半導體裝置用接合導線之製造方法，該半導體裝置用接合導線係如請求項1至3中任一項者，上述半導體裝置用接合導線之製造方法之特徵在於：具有進行1次以上之拉線加工之拉線步驟，於上述拉線步驟中，具有至少1次縮面率為15.5~30.5%之拉線加工，於上述拉線步驟之中途進行1次以上之熱處理，於拉線步驟結束後進行最終熱處理，即將進行上述最終熱處理前之熱處理之溫度為600℃以上且800℃以下，上述最終熱處理之溫度為300℃以上且未達600℃。
TW104110541A 2014-03-31 2015-03-31 Connecting wire for semiconductor device and method for manufacturing the same TWI536476B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014072650 2014-03-31

Publications (2)

Publication Number Publication Date
TW201603151A TW201603151A (zh) 2016-01-16
TWI536476B true TWI536476B (zh) 2016-06-01

Family

ID=54240512

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104110541A TWI536476B (zh) 2014-03-31 2015-03-31 Connecting wire for semiconductor device and method for manufacturing the same

Country Status (11)

Country Link
US (1) US9536854B2 (zh)
EP (1) EP2993693B1 (zh)
JP (1) JP5840328B1 (zh)
KR (1) KR101633414B1 (zh)
CN (1) CN105324838B (zh)
MY (1) MY161721A (zh)
PH (1) PH12015502633B1 (zh)
PT (1) PT2993693T (zh)
SG (1) SG11201509513SA (zh)
TW (1) TWI536476B (zh)
WO (1) WO2015152191A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105296789B (zh) * 2015-11-13 2018-02-02 汕头市骏码凯撒有限公司 一种高可靠性银合金键合丝及其制造方法
KR102312145B1 (ko) * 2017-02-22 2021-10-12 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 반도체 장치용 본딩 와이어
JP6371932B1 (ja) * 2017-02-22 2018-08-08 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US10991672B2 (en) * 2017-08-09 2021-04-27 Nippon Steel Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device
US10629562B2 (en) * 2017-12-29 2020-04-21 Texas Instruments Incorporated Integrated circuit packaging
CN111886685B (zh) * 2018-09-21 2021-10-08 日铁化学材料株式会社 半导体装置用Cu合金接合线
JP6651065B1 (ja) * 2018-09-21 2020-02-19 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
EP4109498A4 (en) * 2020-02-18 2023-11-08 NIPPON STEEL Chemical & Material Co., Ltd. BONDING WIRE MADE OF CU ALLOY FOR SEMICONDUCTOR COMPONENT
JP2021150230A (ja) * 2020-03-23 2021-09-27 株式会社東芝 圧着判定方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721830A (en) * 1980-07-14 1982-02-04 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element
JP2002023618A (ja) 2000-06-30 2002-01-23 Pioneer Goods Kk 点 筆
WO2002023618A1 (fr) 2000-09-18 2002-03-21 Nippon Steel Corporation Fil de connexion de semi-conducteur et son procede de fabrication
TWI237334B (en) * 2002-04-05 2005-08-01 Nippon Steel Corp A gold bonding wire for a semiconductor device and a method for producing the same
JP4141854B2 (ja) * 2002-04-05 2008-08-27 新日鉄マテリアルズ株式会社 半導体装置用金ボンディングワイヤおよびその製造法
JP3697227B2 (ja) * 2002-06-24 2005-09-21 新日本製鐵株式会社 半導体装置用金ボンディングワイヤ及びその製造方法
KR101055957B1 (ko) * 2007-12-03 2011-08-09 가부시키가이샤 닛데쓰 마이크로 메탈 반도체 장치용 본딩 와이어
JP4617375B2 (ja) * 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
EP2239766B1 (en) * 2008-01-25 2013-03-20 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
TW201028240A (en) 2009-01-23 2010-08-01 jun-de Li Composite bonding wire manufacturing method and product thereof
CN102422404B (zh) 2009-07-30 2015-08-12 新日铁住金高新材料株式会社 半导体用接合线
JP4637256B1 (ja) 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
JP4771562B1 (ja) 2011-02-10 2011-09-14 田中電子工業株式会社 Ａｇ−Ａｕ−Ｐｄ三元合金系ボンディングワイヤ
JP5488549B2 (ja) 2011-08-16 2014-05-14 株式会社安川電機 ロボット制御システムおよびロボット制御方法
CN102312120A (zh) * 2011-09-01 2012-01-11 王一平 耐电迁移银铟合金键合丝及其制备方法
US8940403B2 (en) 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
EP2703116B1 (en) * 2012-09-04 2017-03-22 Heraeus Deutschland GmbH & Co. KG Method for manufacturing a silver alloy wire for bonding applications
CN102912176B (zh) * 2012-09-21 2014-12-17 宁波康强电子股份有限公司 高端封装银合金键合丝及其制备方法
KR101513493B1 (ko) * 2013-02-19 2015-04-20 엠케이전자 주식회사 은 합금 본딩 와이어
JP5622012B2 (ja) * 2013-03-29 2014-11-12 三菱マテリアル株式会社 円筒型スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
KR20150140405A (ko) 2015-12-15
PH12015502633A1 (en) 2016-03-07
JP5840328B1 (ja) 2016-01-06
CN105324838B (zh) 2016-10-19
EP2993693B1 (en) 2018-06-06
TW201603151A (zh) 2016-01-16
EP2993693A4 (en) 2017-01-04
US20160111389A1 (en) 2016-04-21
PT2993693T (pt) 2018-10-19
MY161721A (en) 2017-05-15
CN105324838A (zh) 2016-02-10
EP2993693A1 (en) 2016-03-09
JPWO2015152191A1 (ja) 2017-04-13
PH12015502633B1 (en) 2016-03-07
WO2015152191A1 (ja) 2015-10-08
US9536854B2 (en) 2017-01-03
KR101633414B1 (ko) 2016-06-24
SG11201509513SA (en) 2015-12-30

Similar Documents

Publication Publication Date Title
TWI536476B (zh) Connecting wire for semiconductor device and method for manufacturing the same
JP4554724B2 (ja) 半導体装置用ボンディングワイヤ
TWI567211B (zh) Connection lines for semiconductor devices
TWI700754B (zh) 半導體裝置用接合線
US9773748B2 (en) Bonding wire for semiconductor device
JP5073759B2 (ja) 半導体装置用ボンディングワイヤ
JP5246314B2 (ja) 半導体用銅合金ボンディングワイヤ
WO2010106851A1 (ja) 半導体用ボンディングワイヤ
TWI621720B (zh) Bonding wire for semiconductor device
TWI545667B (zh) Connecting wire for semiconductor device and method for manufacturing the same
JP5393614B2 (ja) 半導体装置用ボンディングワイヤ
JP5591987B2 (ja) 半導体装置用ボンディングワイヤ
WO2018155283A1 (ja) 半導体装置用ボンディングワイヤ
JP6371932B1 (ja) 半導体装置用ボンディングワイヤ