TW201250013A - High strength and high elongation ratio of Au alloy bonding wire - Google Patents

High strength and high elongation ratio of Au alloy bonding wire Download PDF

Info

Publication number
TW201250013A
TW201250013A TW100120810A TW100120810A TW201250013A TW 201250013 A TW201250013 A TW 201250013A TW 100120810 A TW100120810 A TW 100120810A TW 100120810 A TW100120810 A TW 100120810A TW 201250013 A TW201250013 A TW 201250013A
Authority
TW
Taiwan
Prior art keywords
gold
bonding wire
wire
heat treatment
strength
Prior art date
Application number
TW100120810A
Other languages
Chinese (zh)
Inventor
Michitaka Mikami
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Priority to TW100120810A priority Critical patent/TW201250013A/en
Publication of TW201250013A publication Critical patent/TW201250013A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

To acquire the best combination of elongation and breaking strength on the Au alloy bonding wire. Adding 0.5-30 wt% of at least one element among Cu, Ag, Pd and Pt to high purity Au, a flat area about elongation ratio change appears between the range of 450-650 DEG C of heat-treatment temperature at wire drawing. Though the wire strength becomes decrease at this range of temperature, the strength is maintained at higher level against the heat treatment temperature of a standard elongation ratio of 4 % of high purity Au alloy wire. Therefore, by the heat treatment of this flat range, Au alloy bonding wire, which has certain level of strength regardless of the temperature change, is acquired. Moreover, by selecting appropriate temperature range, different strength characteristics wires corresponding to the elongation ratio are acquired.

Description

201250013 π、is、明說明: • 【發明所屬之技術領域】 - 本發明係指適用於連接半導體裝置的曰μ # 合金接合線,尤指於車載或高Ϊ = Ϊ 土兄下使用的金合金接合線。 乂衣直寻同/皿% 【先前技術】 長久以來,作為連接半導體裝置之 子之金線,係於高純度金中播雜微 g電乂外^ 99.99重量%以上的金線,由於可靠屬兀素之純度 純金線,其—端藉由超音波熱壓接合法:二皮=用。此種 紹塾或紹合金塾相連接,另一端與基板之外二m的純 脂封製形成半導體裝置。此種^二目^直 ί魏等所形成,軸合金、财合金、 i==kendal1 v〇ld)之縫隙或裂痕 保有較的ί,值上升或接合強度降低。因此為 其接合面之電以生,環境中藉由球形接合, 麻合金之接合ί強度持訊)’即必彡細金-1重量 此種金把5至導線,可於高溫環境藉 =ίϊί金s ί合金t之接合部劣化’ “合強 量%以L―1重量%|巴合金接合線較純度"重 電“較古,。兴制而,其機械性質較佳,但其電性特性之比 “值“ _而έ,相對於純度99.99重量%之純金線, 201250013 其比,阻值ίΩ .咖’而金-ι重量触合金係3.。" ω · 之際’由於接合線之發熱’恐導致裝 • f的乍、斷線之外,亦可能產生信號響應速度變ί等現 =,雖然金一1重量触合金之詳細機制並不明確ίί有 ΪΓΙ於接合面4外的促触之氧化。舉例而言,金-1 ϊ量 金合線,不以_封裝於大氣巾進行高溫儲 ίίί=量添加元素之純度99.99罐以上的 ’ σμ认”產生更夕的鋁氧化物μ.,使接合線變得脆弱。 用之^、法,,^p與f率炫之銀加以合金化’以作為接合線使 ί則即已存在,請參閱曰本專利特開昭 52:51867錢日本專利特開昭㈣聰號等。於α中,即將 重#%以上金賴械強度之微量添加元倾 於添 =量銀之金合金上。此即以取得與純度99. 99 -全:二相同的*電阻值為目的,-邊將金與 土ίΐϊίί持 〇·95重量%,一邊將的、紀及稀 二元=001〜〇. 〇。5趣微量添加於内 ^ ΐίί後述專利文獻丨)。此種接合線係金 f之鈣:釔二+』· 95重量%之銀及〇. 0001〜〇. 005重量 免0的雜質。此種技"1素0中~1種以上的元素,餘量係金及不可避 升,並且矣产r〗妾'線係向強度,可抑制比電阻值之過度上 ί置之金二會發生變形,㈣係作為用於半導體 、但目μ二f (凊參照同上專利文獻之第⑽10欄)。 量^上La Α = ί金接合線,皆係沿用測量純度99重 Ϊ;線其機械性質之方法,藉此取得伸長速 丰於4 靶圍内之裂斷強度。 以判Ϊ 接Ιϊίίf ί由裂斷強度試驗加 戶,其伸#、丨虚至斷衣為止其攻大應力值係稱為裂斷強 Ϊ率變大時ί斷二速率;機械性質係當斷裂伸長 岍虽反貝! s •交小,一般而言其兩者呈現相反對 201250013 應的關係。 S裂_強度變大時’伸長速率 伸長速率變大時,接合導線之低以致合易_,另虽 -妒·<-田妾,'泉移。為兼具該等機械性質之平衡, 長速率(請參照專利文獻2)。 传,^内’與賦予此等機械性質之熱處理溫度之關 ί速ίϊί==溫度上升’度曲線會下降,相反的伸 長速率曲線會上升,呈現交又關係。 接;r見99重量%以上之高純度金(Au) ί、= ίί 原伸長速率高,1斷裂伸長速率4辦後之伸 速率4 μ/ ·ί 斷強度曲線之偏斜角度平緩’因此於斷裂伸長 2 4—後,即便係大範圍之熱處理條件,變化亦不致於太 ,若添加元素含量增加、金之純度較低的 =強度、_強度高且伸長迷率小。為取得其平衡 = 長速率升高的同時裂斷強度降至適度範圍内^若、 =”理溫度使伸長速率升高,於伸長速率^ 得兩相反的裂斷強度便會急速降低,欲取 -=Γί ^第三⑷、⑻模式圖概念性的呈現。如圖所 二線於伸長速率4辦後之熱處理溫度前後,其 度變化曲線偏斜角度平緩’對於熱處理溫 連羊變幅度小(同樣的裂斷強度變化幅度亦小),® 此較谷易以伸長速率作為基準調整裂斷強度。 另一方面,具有強化元素以提升強度之合金導線 ί=ΐΓ,其伸長速率及裂斷強度之變化皆工,:= 度變化範圍,其伸長速率之變倾謹斷时 明顯增大’相較於熱處理溫度僅有少許的變化,此等數^直之變 201250013 化甚大 丄仿照以伸長速率4%前後為指標之習式熱處理,為 县合金接合狀伸長速率與強度、暖之平衡,將ί 取大彳質且 =件之設定、維持相 法取得性質—致的接合線,即成為產生偏斜或套 衣N度具分散性之原因。 另-方面,若接合導線變細,接合間距 、,-因其第一接&性之分散性或偏斜,造成套 性的顯著化,亦會開始大大的辟接合叙度刀政 在此,所謂的偏斜係指接合導線於墊部進行球形接合 ^線^立於賴正上方,朝向端子部緩緩偏斜形成套環,且 :’導線直立部觸即有可能接觸及相鄰的接合線,造成^ ί。^5其係於尚密度安裝時,由於接合線甚細且接合間距狹 乍,容易產生偏斜,其係半導體裝置之組裝良率下滑的一大 Ε] ° ’、 (專利文獻1):日本專利特開2003_7757號 (專利文獻2):日本專利特開2〇〇9_33127號 【發明内容】 本發明係為解決上述的問題,其目的係提供一種具有固定 機械性質之接合線,本發明用於接合線之金合金,即便熱處理 溫度有些許分散性,亦或是接合線之金合金組成有些許不同’ 藉由偏斜以減少套環高度之分散性。 本發明人發現一種金合金接合線,其具有一熱處理溫度上 升的同時’伸長速率呈現平緩的區域,係由銅(Cu)、銀(Ag)、 把(Pd)或紐(Pt)中至少一種以上元素以〇 5〜3〇重量%及餘 201250013 成’严利用此平緩的熱處理溫度區域進行接合線 之,"、處里’即可稭由偏斜取得套環高度分散性較少的接合線。 ^外,亦得知上述的合金,即使包含鈹(Be)、妈(Ca)、稀 二1釔⑺广⑽、鈽(Ce)、銪(Eu)、釓⑽、鉉⑽ fR二 J11、石夕(Sl)、錯(Ge)、錫(Sn)、姻(ίη)、_i)或石朋 ⑻中至少—種以上元素’其合計含有10〜150重量酬,此 接合線之剖面結構幾乎不會有所改變。 發明之第一實施形態係一種用於半導體裝置之接合 Ϊ 「熱處理溫度上升_時,伸長速率呈現平緩的區 或、’係由銅(Cu)、銀(Ag)、鈀(Pd)或鉑(pt)中至少一種以上 5 30重里%及餘量由金(Au)而成,其中於該伸長速率 呈現平緩區域之450.C〜650.C中進行熱處理。 ()另外本發明之第一貫施形態係一種用於半導體梦晉 之接合導線’其具有一熱處理溫度上升的同時,伸 平級的區域,係由銅(Cu)、銀(Ag)、鈀(pd)或鉑(pt)中至少一 素’其合計係Q. 5〜3G重量%及餘量由金(Au)而成, 理呈現平緩區域之45〇x〜飢中進行熱處 ^發明之金合金,係由銅(Cu)、銀⑽、纪⑽或翻 中至>、-種以上元素以〇. 5〜3Q重量%及餘量*金(Au)而成。 ^(Cu)、銀(Ag)、!巴⑽或翻⑽係金合金組成元 代表性元素。 其中,如眾所周知,銅(CU)或銀(A )即使於少量 =完全固炫於綱中,形成金銅合金或金銀合 金銀合金,其呈現平緩的熱處理溫度範圍較鈀(]3幻或鉑 (Pt)之合金廣’其原因係銅原子或銀原子係均勻散佈於金之曰 體結構中,形成均質的金銅合金或金銀合金。 ''曰曰 白另一方面,自實用觀點觀察,鈀(Pd)以〇 5〜2重量% 餘里由,(Au)而成的範圍較佳。基於同一原因,鉑(ρΐ)以〇 $ 〜5重量%及餘量由金(Au)而成的範圍較佳。基於同一原因·, 201250013 龈Ug)以5〜20重量%及餘量由金(Au)而成的範圍較佳。 ,本發明之金合金’若銅(Cu)、銀⑽、把⑽或姑(⑴ : 古拥=一種以上元素,其含有〜30重量%,此金合金便具 溫度上升的同時’伸長速率呈現平緩的區域。伸長速 緩的區域或伸長速率’會因組成金屬之種類、量及熱 ίϋ而有些許分散性不同。對金銅合金而言,0.5〜5重 ^之乾圍較佳。對金銀合金而言,5〜2〇重量%之範圍較佳。 車^佳原因係任一種其呈現平緩的熱處理溫度範圍變得更大之 故0 另一方面,純度99. 99重量%以上之金合金,並無如此 、是=區域,熱處理溫度上升的同時,伸長速率亦持續上升。若 二邊施予固定的張力-邊進行減理,最後將導致斷裂。再 上述的金合金右熱處理溫度過高,會與純度99· 99重旦 ”金一樣’熱處理溫度上升的同時,伸長速率亦J續0 上升,敢後將導致斷裂。 、、 至於純度99. 99重量%以上之金合金⑽及添加銀、鋼、纪 鉑之金合金,此等性質係予示於第一圖及第二圖中。第—圖及第 二圖係表1組成之金及金合金,其熱處理溫度與伸長速率,及熱 處理溫度與裂斷強度間之關係圖。 〔表1〕 金好,其減輕额伸長料及裂斷201250013 π, is, Ming Description: • Technical field to which the invention pertains - The present invention refers to a 曰μ # alloy bonding wire suitable for connection to a semiconductor device, especially a gold alloy used in a vehicle or a sorghum = Ϊ土 brother Bonding wire.先前衣直直同 / 皿% [Prior Art] For a long time, the gold wire that is connected to the semiconductor device is a high-purity gold that is smashed with a gold wire of 99.99% by weight or more. The purity of pure gold wire, the end - by ultrasonic compression bonding method: two skin = use. The ruthenium or ruthenium alloy is connected to each other, and the other end is sealed with a pure resin of 2 m outside the substrate to form a semiconductor device. Such a gap between the two eyes, the straight alloy, the alloy, the i==kendal1 v〇ld), the gap or the crack maintains a higher value, the value rises or the joint strength decreases. Therefore, the electrical connection of the joint surface, the spherical joint in the environment, the bonding strength of the hemp alloy, the strength of the joint), that is, the fine gold-1 weight of the gold to the wire, can be borrowed in a high temperature environment = ίϊί The joint of the gold s ί alloy t deteriorates '"the strength of the strength is L-1% by weight|the Ba alloy bond line is more pure than the "heavy electricity". The mechanical properties are better, but the ratio of its electrical properties is "value" _ and έ, compared to pure gold wire with a purity of 99.99% by weight, 201250013, its resistance, ίΩ. Alloy system 3. " ω · At the time of 'because of the heat of the bonding wire', it may lead to the installation of f, the disconnection of the f, and the signal response speed may also be changed, etc., although the detailed mechanism of the gold-one weight-contact alloy is not It is clear that ίί is entangled in the oxidation of the touch surface outside the joint surface 4. For example, the gold-1 金 金 , , , 封装 封装 封装 封装 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金The line becomes fragile. It is alloyed with ^, method, ^p and f-rate silver. 'As a bonding wire, ί is already there. Please refer to this patent for special opening 52:51867. Kaizhao (four) Conghao, etc. In α, it is about to add more than #% of the amount of gold to the mechanical strength of the amount of gold added to the gold alloy of the amount of gold. This is the same as the purity of 99. 99 - all: two * The resistance value is the purpose, - the side will be gold and the soil ΐϊ ί ί 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 95 = = = = = = = 5 5 5 5 5 5 5 5 5 5 This type of bonding wire is gold of calcium f: 钇二+』· 95% by weight of silver and 〇. 0001~〇. 005 weight free of 0 impurities. This technique "1 prime 0 ~ 1 or more elements, The balance is gold and can not be avoided, and the production of r〗 妾 'line strength, can suppress the excessive resistance of the resistance value of the two will be deformed, (four) system For the use of semiconductors, but for the purpose of the second (f), refer to the same paragraph (10) 10 of the above patent documents. The amount of La Α = ί gold bonding wire, are used to measure the purity of 99 Ϊ; the mechanical properties of the line, borrow This obtains the breaking strength of the extension speed in the 4 target circumference. It is judged by the Ιϊίίf ί by the crack strength test, and the extension stress value is called the fracture strength. When the enthalpy rate becomes large, the rupture rate is two; the mechanical property is the elongation at break, although it is anti-bee! s • The cross is small, generally speaking, the two have opposite relationship to 201250013. S-crack _ intensity increases when 'elongation rate When the elongation rate is increased, the bonding wire is so low that it is easy to _, and the other is - 妒 · <- 妾 妾, 'spring shift. It is a balance of these mechanical properties, long rate (refer to Patent Document 2). Pass, ^ inside 'with the heat treatment temperature to give these mechanical properties, the speed curve will decrease, the opposite elongation curve will rise, showing a relationship. Connect; r see 99% by weight or more High purity gold (Au) ί, = ίί high elongation rate, 1 elongation at break rate 4 The post-extension rate is 4 μ/ · ί. The skew angle of the breaking strength curve is gentle. Therefore, even after a large elongation of the heat treatment condition, the change is not too good. If the content of the added element is increased, the purity of the gold is Lower = strength, _ high strength and low elongation rate. In order to achieve its equilibrium = long rate increase, the fracture strength is reduced to a moderate range. If, = "the temperature is increased, the elongation rate is increased, and the elongation rate is increased. ^ The opposite crack strength will be reduced rapidly, and you want to take -=Γί ^ third (4), (8) conceptual representation of the pattern. As shown in the second line, before and after the heat treatment temperature after the elongation rate of 4, the degree of deviation of the degree curve is gentle. For the heat treatment, the temperature of the sheep is small (the same crack strength is also small), The breaking strength was adjusted based on the elongation rate. On the other hand, the alloy wire with reinforced elements to enhance the strength, the elongation rate and the breaking strength change, the degree of change of the degree of elongation, the change of the elongation rate is significantly increased when the tip is broken. There is only a slight change in the heat treatment temperature. These numbers are very large. The model is very large. The heat treatment is based on the elongation rate of 4% before and after the elongation rate. The combination of large enamel and the setting of the part, and the maintenance of the phase method, the resulting bonding line, is the cause of the deflection or the dispersibility of the N-degree. On the other hand, if the bonding wires are thinned, the joint pitch, and - due to the dispersion or deflection of the first connection & the saliency of the sleeve, it will begin to greatly expand the joint knife. The so-called skewing means that the bonding wire is placed on the pad portion to form a spherical bonding wire. The wire is placed on the upper side of the wire and is gradually deflected toward the terminal portion to form a collar, and: 'the wire upright portion is likely to contact and adjacent. Bonding the wire, causing ^ ί. ^5 When it is installed at a density, the bonding wire is very thin and the bonding pitch is narrow, which tends to be skewed, which is a large drop in the assembly yield of the semiconductor device] ° (Patent Document 1): Japan SUMMARY OF THE INVENTION The present invention is directed to solving the above problems, and an object thereof is to provide a bonding wire having a fixed mechanical property, which is used in the present invention. The gold alloy of the bond wire, even if the heat treatment temperature is slightly dispersible, or the gold alloy composition of the bond wire is slightly different' by skewing to reduce the dispersion of the height of the collar. The present inventors have found a gold alloy bonding wire having a region in which the heat treatment temperature rises while the elongation rate is gentle, and is at least one of copper (Cu), silver (Ag), palladium (Pd) or neon (Pt). The above elements are 〇5~3〇% by weight and the remaining 201250013 is used to strictly use this gentle heat treatment temperature zone for the bonding line, "where, the straw can be obtained by skewing to obtain a highly dispersible joint of the collar. line. ^, it is also known that the above alloys, even containing bismuth (Be), mother (Ca), dilute bismuth (7) wide (10), cerium (Ce), cerium (Eu), cerium (10), cerium (10) fR two J11, stone At least one or more of the elements (S1), S (Ge), Tin (Sn), Marriage (ίη), _i) or Shipen (8) contain a total of 10 to 150 weights, and the cross-sectional structure of the bonding wire is hardly Will change. The first embodiment of the invention is a bonding device for a semiconductor device "when the heat treatment temperature rises, the elongation rate exhibits a gentle region, or the system is made of copper (Cu), silver (Ag), palladium (Pd) or platinum ( Pt) at least one of 5 30% by weight and the balance is made of gold (Au), wherein the heat treatment is performed in the 450.C~650.C where the elongation rate is gentle. () In addition, the first pass of the present invention The application form is a bonding wire for a semiconductor dream, which has a heat treatment temperature rise while the level of the flattening is at least in copper (Cu), silver (Ag), palladium (pd) or platinum (pt). One prime's total Q. 5~3G wt% and the balance is made of gold (Au), which is 45°x in the gentle area~ The hunger is heated. The gold alloy is invented by copper (Cu). , (10), 纪(10) or 翻中至>, - The above elements are made of 5 5~3Q% by weight and the balance * gold (Au). ^(Cu), silver (Ag), !巴(10) or Turning (10) is a representative element of a gold alloy composition. Among them, as is well known, copper (CU) or silver (A) forms a gold-copper alloy or a gold-silver alloy even in a small amount = completely solid in the outline. Gold-silver alloy, which exhibits a gentle heat treatment temperature range wider than that of palladium (the alloy of 3 or Pt). The reason is that copper atoms or silver atoms are evenly dispersed in the structure of gold, forming a homogeneous gold-copper alloy or Gold-silver alloy. ''曰曰白, on the other hand, from a practical point of view, palladium (Pd) is preferably 5~2wt% by weight, and (Au) is better. For the same reason, platinum (ρΐ) The range from ($ to 5% by weight and the balance from gold (Au) is better. For the same reason, 201250013 龈Ug) is 5-20% by weight and the balance is made of gold (Au). Preferably, the gold alloy of the present invention, if copper (Cu), silver (10), (10) or abundance ((1): cohesive = more than one element, which contains ~30% by weight, the gold alloy has a temperature rise while elongating The rate shows a gentle area. The area where the elongation is slow or the elongation rate will be slightly different due to the type, amount and heat of the constituent metals. For the gold-copper alloy, the dry circumference of 0.5 to 5 is better. For gold-silver alloys, the range of 5 to 2% by weight is preferred. The temperature range of the heat treatment is more flat. On the other hand, the gold alloy having a purity of 99.99% by weight or more does not have such a region. The heat treatment temperature rises and the elongation rate continues to rise. The two sides are given a fixed tension-side for the reduction, and finally the fracture will be caused. Then the above-mentioned gold alloy right heat treatment temperature is too high, and the heat treatment temperature rises as the purity of 99.99 heavy denier "gold", and the elongation rate is also increased. J continued 0, rising, will lead to breakage.,, as for the purity of 99.99% by weight of the gold alloy (10) and the addition of silver, steel, and gold alloy of the platinum, these properties are shown in the first figure and the second In the picture. The first and second figures are graphs of the heat treatment temperature and elongation rate, and the relationship between the heat treatment temperature and the fracture strength of the gold and gold alloys composed of Table 1. [Table 1] Kim is good, which reduces the amount of elongation and breakage.

201250013201250013

Au-1.5%Pd EL% 1.5 3.0 5.8 13.0 13.5 13. 5 13.5 BL/MPa ------ 538.0 396.0 297.0 256.0 211.0 182.0 172.0 EL% 1.5 3.4 5.5 10. 1 11.1 11.1 11.3 Au-0. 8%Pt BL/MPa ________ 540.0 402.0 279.0 240.0 219.0 183.0 162.0 EL% 1.4 3. 1 5.5 7.9 10.8 11.1 11.1 5N-Au BL/MPa 403.0 298.0 209. 0 184.0 158.0 121.0 63. 0 EL% 1.7 4.2 5.8 13.9 17.8 20. 1 2.2 表中’ BL/MPa:裂斷負載、EL%:伸長速率% 凊參閱第一圖,5N高純度金接合導線於伸長速率4%前後 之熱,理溫度350X〜400.C前後中,其伸長速率之變化傾向 =平緩_’另一方面,第二圖之裂斷負載與熱處理溫度之關係 中,於同一範圍内的熱處理溫度,其裂斷負載變化同樣呈現較 平緩的傾向。 對此,Μ參閱熱處理溫度與伸長速率及熱處理溫度與裂斷 〇負載之關係圖,金-16%銀、金-18%銀、金-1%銅、金-15 %鈀之各合金,一直以來,於伸長速率5〜10幾%之埶處理溫 ^圍’伸長速率之變化會大幅度的急速上升,相反的U 載會以反方向急速下降。因此,於此溫度範_,欲控制伸長 速率與強度於期望範圍内係相當困難。 但此等合金於更咼溫之熱處理溫度下,伸長速率的變化雖 會依合金組成成分而有所不同,但於45〇.c前後開始呈現8〜 13/ό近乎平緩’ 600 C以上’或達纟彳亦會維持該傾向。 此外,根據第二圖之裂斷負載關係圖可得知,雖裂斷負 與5N純金線同樣的降低,但由於原係高強度,所以於 〜650 C之熱處理溫度下,還可維持5N純金線於4%伸長 時之裂斷負載以上的數值。 據於高純度金中添人此等添加元素後,經嚴 201250013 之強度金合金導線’此外,亦可控制熱處理溫度取得 之合金導線,且此等性質之性小,於安定的‘ 门強度 添加入於合金線之銀、銅、把於能取得。 〜2。權、銅一重量二 〜5重巧之範圍財得以發揮。伸長速率與強度(衡,^ 對應此等金合金導線,利用其上述特性決 β人、 導線所需的多樣化性質之接合導線。 卩Τ 接合 (熱=;Γ本發明金合金接合導線之熱處理條件。 現平緩區域之 ,’其伸長速_始呈現平緩‘I 開始至ST+200.C,更佳係你ςτ本CT|1^ 卜間稱ST) 原因係晶粒大小會呈現更均勻的狀‘|。之溫度範圍。其 (固定張力) 係纏模 予接合導線固定的張力。 ’、捲、,泉軸之間進仃,施 (熱處理後之水冷) 粗大ΐ由&^防止接合導線之部分晶粒 8〜,,越細其域理ii速之線徑係 晶組織構造係較以往⑽f 2 2的金合金線,接合線的結 成。此外,接人& > ^ w=i的日日粒以規則性地整齊排列而 因此本發日 丨之合金接合線軟, 環高度分散性較:線’比以往接合線其偏斜或套 之接合強度分散音波接合亦具有減少第二接合 之效果。本發明金合金,因與錄或結合金 201250013 蟄之第-接合之接合性佳,亦能確保接合導線之接合可靠性, =使用壞境係㊅溫或常溫’皆能確保半導體裝置之接合可靠 【實施方式】 入人士,明佳實施形態,係連續以拉線模拉伸後的本發明 二金線,自錢拉線模開始至籠 χ 之熱處理溫度下完成。由於接合線甚細,雖於大氣 AP ’ if由水冷其品質較穩定。尤其是Aii-20重Au-1.5% Pd EL% 1.5 3.0 5.8 13.0 13.5 13. 5 13.5 BL/MPa ------ 538.0 396.0 297.0 256.0 211.0 182.0 172.0 EL% 1.5 3.4 5.5 10. 1 11.1 11.1 11.3 Au-0. 8%Pt BL/MPa ________ 540.0 402.0 279.0 240.0 219.0 183.0 162.0 EL% 1.4 3. 1 5.5 7.9 10.8 11.1 11.1 5N-Au BL/MPa 403.0 298.0 209. 0 184.0 158.0 121.0 63. 0 EL% 1.7 4.2 5.8 13.9 17.8 20. 1 2.2 In the table, 'BL/MPa: cracking load, EL%: elongation rate% 凊 Refer to the first figure, the heat of the 5N high-purity gold bonding wire before and after the elongation rate of 4%, and the elongation of the temperature before and after the temperature of 350X~400.C The tendency of the rate change = gentle _' On the other hand, in the relationship between the fracture load of the second graph and the heat treatment temperature, the heat transfer temperature in the same range also shows a relatively flat tendency of the crack load change. In this regard, see the relationship between heat treatment temperature and elongation rate and heat treatment temperature and cracking enthalpy load, gold-16% silver, gold-18% silver, gold-1% copper, gold-15% palladium alloys, Since the elongation rate of 5 to 10% of the treatment temperature, the change in elongation rate has increased sharply, and the opposite U-load has rapidly decreased in the opposite direction. Therefore, at this temperature range, it is quite difficult to control the elongation rate and strength within the desired range. However, at the heat treatment temperature of these alloys, the change of elongation rate may vary depending on the composition of the alloy, but it starts to show 8~13/ό near the 45〇.c and is nearly flat '600 C or more' or Daxie will also maintain this trend. In addition, according to the fracture load diagram of the second figure, it can be seen that although the cracking negative is the same as that of the 5N pure gold wire, due to the high strength of the original system, the 5N pure gold can be maintained at the heat treatment temperature of ~650 C. The value above the breaking load at 4% elongation. According to the high-purity gold added to these added elements, after the strength of the 201250013 strength gold alloy wire 'in addition, can also control the heat treatment temperature of the alloy wire, and the nature of these properties is small, in the stability of the 'door strength added to The silver, copper, and alloy of the alloy wire can be obtained. ~2. Right, copper one weight two ~ 5 heavyweight range of money can be played. Elongation rate and strength (balance, ^ corresponds to these gold alloy wires, using the above characteristics to determine the diversified properties of the conductors of the conductors and wires. 卩Τ Bonding (heat =; heat treatment of the gold alloy bonding wire of the present invention) Condition. Now the flat area, 'the speed of its elongation _ starts to be gentle' I start to ST + 200.C, better you ς 本 本 CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT The temperature range of '..' (the fixed tension) is the tension that is applied to the bonding wire by the wrapping. ', the roll, the spring between the springs, the application (water cooling after heat treatment), the coarse ΐ by & The partial grain of the wire is 8~, and the finer the wire diameter of the wire structure is than the conventional (10)f 2 2 gold alloy wire, and the bonding wire is formed. In addition, the accessor &> ^ w= The daily granules of i are regularly arranged neatly, so the alloy bonding wire of the present day is soft, and the height dispersion of the ring is higher: the line 'is skewed compared with the conventional bonding wire or the bonding strength of the sleeve is dispersed. The effect of two joints. The gold alloy of the present invention, due to the recording or combination of gold 20 1250013 蛰 第 - 接合 接合 接合 接合 接合 - - - 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 The two gold wires of the present invention which are continuously stretched by a wire drawing die are completed from the start of the carbon wire drawing die to the heat treatment temperature of the cage. Since the bonding wire is very fine, although the atmosphere is AP 'if by water cooling, the quality thereof is relatively stable. Especially the weight of Aii-20

Hi 5重量%鋼合金及Au-0.8〜1 2重量 dUC件下可取得偏斜或套環高度(係指半導體 分散性較穩定的接合可靠性。 要。強度 丨所示的本發明金合金接合線,為確保具有接合線之 f f由拉絲加工製造出具有線徑之用於接合接= f明金合金線(以下祕树料線)職丨〜27及不屬於 圍號合線的比較例金合金線(以下簡稱比 j.sMaxumplus)係成一組,將配載於半導體丨 接抹古度.5_、套⑽度:22Q"m、顯球徑:54_、壓 之條件下進行接合,再依套環高度之分散性及 第一接&之接合強度的分散性性進行評估。 合^〇〇2=$線後其偏斜與套環高度之分黄1性:其評 估'〜果不於表2及表3之評估項目攔中。 (評估方法) 於圖表中’偏斜係指於描繪第—接合至第二接合之套環 201250013 時,於套環高戶 xy平面,藉V自動向Λ方向曰’將自晶片高度之最高點投射至 接於ΧΥ平面之測1機測量第-接合與第二接合連 量)。此外,套枣古;: 差距’此係表示偏斜線(偏斜 時,將自動:第—接合至第二接合之套環 分散性,藉由標準偏差進行定量評估。再者,第二 強度,係藉由偏向第二接合之接合部2〇〇"m的第一^合側二 萬能接合強度測試機進行拉力強度試驗。 ° (表2) 實施例Hi 5 wt% steel alloy and Au-0.8~12 2 weight dUC parts can obtain deflection or collar height (refer to the joint reliability of semiconductor dispersion is stable.) The strength of the invention shown in the gold alloy joint Wire, in order to ensure that the wire with the bonding wire is manufactured by wire drawing, the wire alloy is used for the jointing = f gold alloy wire (the following secret tree material line) job ~ 27 and the comparative gold alloy not belonging to the square wire Lines (hereinafter referred to as j.sMaxumplus) are grouped together and will be placed in a semiconductor splicing wiper.5_, set (10) degrees: 22Q"m, significant ball diameter: 54_, under pressure, and then The dispersion of the height of the ring and the dispersibility of the joint strength of the first joint & are evaluated. The deviation of the joint and the height of the collar after the 〇〇2=$ line is yellow: its evaluation '~ fruit is not The evaluation items in Tables 2 and 3 are in the middle of the evaluation. (Evaluation method) In the diagram, the 'skewed line' refers to the hex plane of the collar high-detailed 201250013 when the first-to-second joint is drawn. Λ Direction 曰 'projects the highest point from the height of the wafer to the measuring machine connected to the ΧΥ plane. Even combined amount). In addition, the set of jujube;: gap 'this line indicates the skew line (when skewed, it will automatically: the first to the second joint of the sleeve dispersion, quantitative assessment by standard deviation. Again, the second intensity, The tensile strength test was performed by the first joint side 20,000 joint strength tester biased toward the second joint joint portion 2 ° " m. (Table 2) Example

12 16 餘量 1.5 530 10.9 ◎ ◎ ◎ 17 餘量 0.8 620 12.3 〇 〇 ◎ 18 餘量 1.8 500 12.6 ◎ 〇 ◎ 19 餘量 7 580 10.9 〇 〇 〇 20 餘量 3 550 11.3 〇 〇 ◎ 21 餘量 0.8 490 11.2 ◎ ◎ 〇 22 餘量 3.2 530 11.6 ◎ 〇 ◎ 23 餘量 13 600 11.9 〇 〇 〇 24 餘量 6.4 570 12.0 〇 〇 ◎ 25 餘量 15 1 1.5 550 12.2 ◎ ◎ ◎ 26 餘量 8 1.7 1 580 11.8 〇 〇 ◎ 27 餘量 3 3 1.5 1.5 570 10.9 ◎ ◎ ◎ 201250013 (表3) 比較例12 16 balance 1.5 530 10.9 ◎ ◎ ◎ 17 balance 0.8 620 12.3 〇〇 ◎ 18 balance 1.8 500 12.6 ◎ 〇 ◎ 19 balance 7 580 10.9 〇〇〇 20 balance 3 550 11.3 〇〇 ◎ 21 balance 0.8 490 11.2 ◎ ◎ 〇22 balance 3.2 530 11.6 ◎ 〇 ◎ 23 balance 13 600 11.9 〇〇〇 24 balance 6.4 570 12.0 〇〇 ◎ 25 balance 15 1 1.5 550 12.2 ◎ ◎ ◎ 26 balance 8 1.7 1 580 11.8 〇〇 ◎ 27 balance 3 3 1.5 1.5 570 10.9 ◎ ◎ ◎ 201250013 (Table 3) Comparative example

組成元素(重量%) 平緩範圍之熱處理 評估項目 編 號 Au Ag Cu Pd Ρΐ 霄施溫度 (C) 伸長速率 (%) 偏斜 套環 高度 第二接合之接 合強度分散性 28 餘量 0.3 430 11.2 〇 〇 X 29 餘量 40 690 11. 6 X X Δ 30 餘量 0.3 480 11.3 〇 〇 Δ 31 餘量 40 690 11.6 X X 〇 32 餘量 0.3 480 11.3 Δ △ 〇 33 餘量 40 630 12.0 X X 〇 34 餘量 0.3 470 10. 8 Δ △ 〇 35 餘量 40 690 11.2 X X 〇 36 餘量 15 530氺 4 X △ Δ (*)比較例36,其平緩範圍之開始溫度(ST)係550X,實施溫度係較ST低之530’C 201250013 '偏差綠示接合線偏斜量之 •表示 20^ffl a_L^ 3〇,m , x^- 2〇"m ' 此外,表之评估項目欄中,楚 準偏差值,◎表示未滿〇 ^ ϋ&之接合強度係表示標 表示L 0以上至未滿L 5 δχ^ϋχ8L以。上至未滿!. 〇,△ 如表2及表3所示的沾里《τ θ 合線之特徵,係針對該發^圍本發明金合金接 變化呈現平緩的區域内進行埶,·成=豪組成,於伸長速率 線係軟質,因此機械性質良^偏斜、以5之本發明接合 二接合之接合強度佳,相對於此,不^ =,度之分散性及第 之比較例接合線編號28〜36,〔、有此等組成成分及特性 — t-項關不良。 36 ’於此轉估項目卜項中至少 f有固定強度以上的合金導線,此外,化影響之 域’針對該伸長速率可取得不同強产卜▲的溫度區 條件之組合,將偏斜及套環 $性=線。更由於此等 定性質之接合線。 刀政让減低,以取得近乎固 對此’由於比較例導線對於埶 強度之變化較大,無法取得固定性變化其伸長速率及 升機械性質、強度而增添添加元素,、^此外即使為提 良,結果造成紐轉伸長速*. ft高度皆呈現不 本發明之接合線,係利用具之平衡。 率變化呈現平緩的區域,以取 ^於,處理溫度其伸長速 外’於熱處理溫度其伸長逮率變化呈ϋ斷強度接合線,此 理,藉此取得此等性質穩定的接合線,二,域,進行熱處 201250013 所需的各種性質接合線,亦有助於此等生產力之提并。 •【圖式簡單說明】 第一圖係高純度金接合線及本發明金合金接合線’其對於 熱處理溫度之伸長速率的變化。 第二圖係高純度合金接合線及本發明金合金接合線’其對 於熱處理溫度之裂斷強度(裂斷負載)的變化。 第三圖係高純度金合金接合線與含有強化元素之高強度 合金接合線,其熱處理溫度與伸長速率及裂斷強度之關係概念 圖。 【主要元件符號說明】Composition element (% by weight) Heat treatment evaluation item of the flat range Au Ag Cu Pd Ρΐ Temperature of application (C) Elongation rate (%) Deviation collar height Second joint bond strength dispersion 28 Balance 0.3 430 11.2 〇〇 X 29 Balance 40 690 11. 6 XX Δ 30 Balance 0.3 480 11.3 〇〇Δ 31 Balance 40 690 11.6 XX 〇32 Balance 0.3 480 11.3 Δ △ 〇33 Balance 40 630 12.0 XX 〇34 Balance 0.3 470 10. 8 Δ △ 〇 35 balance 40 690 11.2 XX 〇 36 balance 15 530 氺 4 X △ Δ (*) Comparative Example 36, the gradual range start temperature (ST) is 550X, the implementation temperature is lower than ST 530'C 201250013 'Deviation green indicates the amount of deflection of the joint line• indicates 20^ffl a_L^ 3〇,m , x^- 2〇"m ' In addition, in the evaluation item column of the table, the deviation value of Chu is ◎ The joint strength indicating that it is less than ϋ^ ϋ& indicates that the mark indicates L 0 or more to less than L 5 δχ^ϋχ8L. Up to not full! 〇, △ As shown in Table 2 and Table 3, the characteristic of the τ θ line is the gradual change in the area where the gold alloy is changed in the present invention. The elongation rate line is soft, so the mechanical properties are good, and the joint strength of the joint of the present invention of 5 is good. In contrast, the dispersibility of the degree and the comparative example joint wire number 28 to 36 , [, have such components and characteristics - t-term bad. 36 'In this estimation item, at least f has an alloy wire with a fixed strength or more, and in addition, the domain of the influence area can be obtained by combining the temperature zone conditions of different strong yields ▲ for the elongation rate, and the deflection and the set Ring $ sex = line. More due to the nature of these bonding lines. The knife is reduced, in order to achieve near-solidification. Because the comparative example wire has a large change in the strength of the crucible, it is impossible to obtain a fixed change in its elongation rate and the mechanical properties and strength, and adds additional elements. As a result, the height of the transition is *. ft height is not the joint line of the invention, and the balance is utilized. The rate change shows a gentle area, in order to take the temperature, the elongation rate of the treatment, and the change of the elongation rate of the heat treatment temperature as a breaking strength bonding line, thereby obtaining a stable bonding wire of such properties, The domain, the various nature of the bonding lines required for the hotspot 201250013, also contributes to the productivity. • [Simple description of the drawings] The first figure is a change in the elongation rate of the high-purity gold bonding wire and the gold alloy bonding wire of the present invention for the heat treatment temperature. The second figure is a change in the breaking strength (cracking load) of the high-purity alloy bonding wire and the gold alloy bonding wire of the present invention with respect to the heat treatment temperature. The third figure is a conceptual diagram of the relationship between heat treatment temperature, elongation rate and fracture strength of a high-purity gold alloy bond wire and a high-strength alloy bond wire containing a strengthening element. [Main component symbol description]

Claims (1)

201250013 、τ萌專利範圍: 1. 種半導體襄置之接合線,係由銅(cu)、f 、 .㈣至少-種以上元素以。.5〜化 ‘的接合線,其特徵在於隨著熱處理溫度成 現平緩的450.C〜650.C範圍内進行熱處王里。 伸長速率呈 2. —種半導體裝置用之接合線,係由銅((: 種以上元素以合計◦. 5〜30重量%及餘量巴由全(Z) =的接合f線’其特徵在於隨著熱處理溫度上 ,(Au) 速率呈現平緩的450。C〜650 ·C範圍内進行熱處理 升之伸長 求2所述的半導體裝置用之接合線,係由銅(Cu)、 0.5^30 tt% 之接合線’其特徵在於隨著熱處理溫度 理平緩的45〇x〜65〇χ範圍内進行熱處 )·如請求項1或2所述的半導體裝践之接合線,其中該金合全 係由鋼(Cu)以0. 5〜5重量%及餘量由金(Au)而成。 ’ ^如請求項1或2所述的半導體褒制之接合線,其中該金合金 係由銀(Ag)以5〜20重量%及餘量由金(Au)而成。 6. 如請求項1或2所述的半導體裝置狀接合線,其中該金人金 係由!巴⑽以〇. 5〜2重量%及餘量由金(Au)而成。 、’ 7. 如請求項1或2中所述的半導體裝置用之接合線,其中該熱處 理係於伸長速率斤呈現平緩區域之開始溫度(以下簡稱至 ST+200X的溫度範圍内進行。201250013, τ Meng patent range: 1. The bonding wire of a semiconductor device is made of copper (cu), f, (4) at least one or more elements. .5~ ing's bonding line, which is characterized by a heat level of 450.C~650.C as the heat treatment temperature becomes gentle. The elongation rate is a bonding wire for a semiconductor device, which is characterized by copper ((: a combination of the above elements in a total amount of ◦ 5 to 30% by weight and a balance of the total (Z) = joint f-line] With the heat treatment temperature, the (Au) rate is mildly 450. The heat treatment is carried out in the range of C to 650 · C. The bonding wire for the semiconductor device described in 2 is made of copper (Cu), 0.5^30 tt The bonding wire of % is characterized in that it is heated in the range of 45 〇 x 65 65 随着 with the heat treatment temperature.) The bonding wire of the semiconductor package according to claim 1 or 2, wherein the fused wire is composed of The steel (Cu) is made of gold (Au) in an amount of 0.5 to 5% by weight, and the balance is the metal-made bonding wire according to claim 1 or 2, wherein the gold alloy is made of silver (Ag). The semiconductor device-like bonding wire according to claim 1 or 2, wherein the gold metal is made by the bar (10) to 〇. 5~ 2% by weight and the balance is made of gold (Au). 7. The bonding wire for a semiconductor device according to claim 1 or 2, wherein the heat treatment is based on an elongation rate The temperature at which the start temperature of the gradual region is present (hereinafter referred to as ST+200X) is performed.
TW100120810A 2011-06-15 2011-06-15 High strength and high elongation ratio of Au alloy bonding wire TW201250013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100120810A TW201250013A (en) 2011-06-15 2011-06-15 High strength and high elongation ratio of Au alloy bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100120810A TW201250013A (en) 2011-06-15 2011-06-15 High strength and high elongation ratio of Au alloy bonding wire

Publications (1)

Publication Number Publication Date
TW201250013A true TW201250013A (en) 2012-12-16

Family

ID=48139158

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100120810A TW201250013A (en) 2011-06-15 2011-06-15 High strength and high elongation ratio of Au alloy bonding wire

Country Status (1)

Country Link
TW (1) TW201250013A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111719063A (en) * 2019-03-18 2020-09-29 深圳市凯仕莱珠宝有限公司 Production formula and process of 24K new pure gold
TWI817015B (en) * 2020-04-10 2023-10-01 日商田中電子工業股份有限公司 Gold-coated bonding wire and manufacturing method thereof, semiconductor wire bonding structure and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111719063A (en) * 2019-03-18 2020-09-29 深圳市凯仕莱珠宝有限公司 Production formula and process of 24K new pure gold
CN111719063B (en) * 2019-03-18 2022-08-12 深圳市凯仕莱珠宝有限公司 24k pure gold and process thereof
TWI817015B (en) * 2020-04-10 2023-10-01 日商田中電子工業股份有限公司 Gold-coated bonding wire and manufacturing method thereof, semiconductor wire bonding structure and semiconductor device

Similar Documents

Publication Publication Date Title
JP5550231B2 (en) Copper bonding wire or extra fine wire with improved bonding and corrosion properties
TWI518706B (en) Bonding wire for semiconductor devices
TWI428455B (en) Silver-gold-palladium ternary alloy bonding wire
US8101030B2 (en) Manufacturing method for composite alloy bonding wire
WO2012169067A1 (en) High-strength, high-elongation-percentage gold alloy bonding wire
TWI579095B (en) Copper wire
CN101626006B (en) Flexible bonding copper wire and preparation method thereof
TW201037777A (en) Bonding wire
CN102592700B (en) Composite silver wire
TWI536396B (en) Silver alloy soldered wire for semiconductor packages
JP6762386B2 (en) A method for producing thick copper wire for bonding applications
TW201250013A (en) High strength and high elongation ratio of Au alloy bonding wire
JP4694908B2 (en) Manufacturing method of Au fine wire for ball bonding
CN104299954B (en) A kind of copper cash for semiconductor welding
WO2006134824A1 (en) Gold alloy wire for use as bonding wire exhibiting high initial bonding capability, high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance
US20100239455A1 (en) Composite alloy bonding wire and manufacturing method thereof
JP4947670B2 (en) Heat treatment method for bonding wires for semiconductor devices
TW201440074A (en) Silver alloy welding leads
TWI494449B (en) Silver alloy wire
JP2003007757A (en) Gold alloy wire for bonding semiconductor element
TW201610190A (en) Silver alloy-bonding wire and manufacturing method thereof
TWI512762B (en) Silver alloy line
WO2016104121A1 (en) Copper bonding wire
JP2009105250A (en) Gold alloy wire for ball bonding
TW201001642A (en) Semiconductor package using wires consisting of Ag or Ag alloy