WO2016104121A1 - Copper bonding wire - Google Patents

Copper bonding wire Download PDF

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Publication number
WO2016104121A1
WO2016104121A1 PCT/JP2015/084271 JP2015084271W WO2016104121A1 WO 2016104121 A1 WO2016104121 A1 WO 2016104121A1 JP 2015084271 W JP2015084271 W JP 2015084271W WO 2016104121 A1 WO2016104121 A1 WO 2016104121A1
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Prior art keywords
mass
copper
bonding wire
fab
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PCT/JP2015/084271
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French (fr)
Japanese (ja)
Inventor
長谷川　剛
ハズィク サムスディン
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タツタ電線株式会社
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Application filed by タツタ電線株式会社 filed Critical タツタ電線株式会社
Priority to CN201580053821.4A priority Critical patent/CN107112252A/en
Priority to KR1020177019875A priority patent/KR20170097141A/en
Publication of WO2016104121A1 publication Critical patent/WO2016104121A1/en

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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/0554—External layer
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    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Definitions

  • the present invention relates to a copper bonding wire for connecting a semiconductor element electrode and a substrate electrode.
  • a bonding wire used for connecting an electrode on a semiconductor element and an electrode on a substrate is very thin, and therefore a metal material having good conductivity and excellent workability is used.
  • gold bonding wires made of gold (Au) have been used in the past because of their chemical stability and ease of handling in the atmosphere. Since it is expensive, it is desired to use a copper bonding wire made of less expensive copper (Cu).
  • the copper bonding wire mixes hydrogen, which is a flammable gas, with nitrogen in order to form a well-shaped ball (FAB: Free Air Ball) with high sphericity when ball-bonding to an electrode of a semiconductor element. It is necessary to mold the FAB in the forming gas atmosphere, and a facility with sufficient safety considerations must be prepared.
  • FAB Free Air Ball
  • the Cl content is 2 mass ppm or less, and 2 mass% or more and 7.5 mass% or less.
  • a copper bonding wire containing Au has been proposed (see, for example, Patent Document 1 below).
  • the FAB formed at the tip of the bonding wire is pressed against the electrode in a forming gas atmosphere and crushed, and then the 1st bonding is performed by applying thermal energy and vibration energy. Accordingly, the fine pitch of the electrodes has been advanced, and it is required to prevent the short-circuit between adjacent electrodes by controlling the shape of the first joint formed when the FAB is pressed against the electrodes to be circular. ing.
  • the copper bonding wire disclosed in Patent Document 1 has a problem in that it is difficult to control the shape of the first joint and it is difficult to cope with fine pitch.
  • the present invention has been made in consideration of the above-mentioned problems, and can form a FAB having a good shape even when the atmosphere gas at the time of forming the FAB is nitrogen gas.
  • An object of the present invention is to provide a copper bonding wire in which the shape of the first joint formed at the time can be a good circular shape.
  • the copper bonding wire according to the present invention has a gold content of 0.5 mass% to 5.0 mass%, and a sulfur content of 1 massppm to 15 massppm, The balance is made of copper and inevitable impurities.
  • the copper bonding wire of the present invention by containing 0.5% or more of gold, it is possible to obtain FAB with high sphericity even if the atmosphere at the time of FAB formation is only nitrogen gas, and a predetermined amount of sulfur. By adding, the shape of the 1st junction formed when the FAB is brought into contact with the electrodes and crushed can be made into a good circular shape, and even when the distance between the electrodes is small, the adjacent electrodes are not easily short-circuited. .
  • Another copper bonding wire according to the present invention has a gold content of 0.5 mass% to 5.0 mass%, a sulfur content of 1 massppm to 15 massppm, and a silver content of 25 mass%. It is ppm or less, and the remainder consists of copper and inevitable impurities.
  • Another copper bonding wire according to the present invention has a gold content of 0.5 mass% or more, a sulfur content of 1 massppm or more and 15 massppm or less, and further contains at least one of palladium and platinum.
  • the total content of gold, palladium, and platinum is 5.0% by mass or less, and the balance is made of copper and inevitable impurities.
  • the atmospheric gas at the time of FAB formation is nitrogen gas, it is possible to form a FAB having a good shape, and the shape of the 1st junction formed when the FAB is brought into contact with the electrode and crushed is good. It can be circular.
  • the copper bonding wire of this embodiment contains 0.5 mass% or more and 5.0 mass% or less of gold and 1 massppm or more and 15 massppm or less of sulfur, and the balance is made of copper and inevitable impurities. .
  • the wire diameter of the copper bonding wire according to the present embodiment may be various sizes depending on the application, but may be, for example, 10 to 50 ⁇ m.
  • the gold content exceeds 5.0 mass%, the amount of expensive gold used increases and the electrical resistivity of the bonding wire also increases. However, if the gold content is 5.0 mass% or less, the gold content is high. The manufacturing cost of the bonding wire can be kept low, and the electrical resistivity is maintained in an appropriate range.
  • the copper bonding wire contains 0.5% by mass or more and 5.0% by mass or less of gold, if the sulfur content is less than 1 ppm by mass, the work hardening at the time of plastic deformation is insufficient, so the FAB is used as an electrode. The FAB is easily crushed when it is pressed against, so that the shape of the first joint cannot be controlled to be circular. Further, the wire is heated by electric discharge to form FAB.
  • the copper bonding wire contains gold in an amount of 0.5% by mass or more and 5.0% by mass or less, if the sulfur content exceeds 15 mass ppm, The wire is likely to be oxidized by heat at the time of FAB formation, and a bonding failure is likely to occur during the 2nd bonding performed after the 1st bonding.
  • the copper bonding wire contains 0.5% by mass or more and 5.0% by mass or less of gold
  • the sulfur content is 1 ppm or more and 15% by mass or less
  • work hardening occurs during plastic deformation, which pushes the electrode. It becomes easy to control the shape of the 1st joint part when it is crushed to a circle, and the wire is not easily oxidized even when receiving heat when forming the FAB, and the joining property of the 2nd joint is improved. Therefore, it is preferable that the copper bonding wire which concerns on this embodiment contains gold 0.5 mass% or more and 5.0 mass% or less, and contains sulfur 1 mass ppm or more and 15 mass ppm or less.
  • aluminum electrodes made of aluminum or aluminum alloys are mainly used as electrode materials.
  • an intermetallic compound layer (Ag2) of silver contained in the copper bonding wire and aluminum in the electrode Al) is formed at the bonding interface.
  • Ag2 Generation of Al can be suppressed, and deterioration of corrosion resistance in a humid environment can be suppressed.
  • a rod-shaped ingot having a predetermined diameter is produced by a continuous casting method.
  • the rod-shaped ingot is drawn to reduce the diameter until it reaches a predetermined diameter (for example, 10 to 50 ⁇ m) to obtain a copper bonding wire.
  • a predetermined diameter for example, 10 to 50 ⁇ m
  • tempering heat treatment continuous annealing is performed at 300 to 800 ° C. for 0.1 to 10 seconds in a nitrogen gas atmosphere.
  • the copper bonding wire of the present embodiment contains 0.5% by mass or more and 5.0% by mass or less of gold in the copper bonding wire, a FAB having a high sphericity can be formed even in a nitrogen gas atmosphere. The corrosion resistance of the first joint can be improved.
  • the copper bonding wire of this embodiment contains 1 mass ppm or more and 15 mass ppm or less sulfur in addition to 0.5 mass% or more and 5.0 mass% or less gold
  • the shape of the FAB to be formed can be easily controlled to be circular, and the wire is not easily oxidized by the heat at the time of forming the FAB, and the bondability of the 2nd junction is improved.
  • the copper bonding wire of this embodiment has a silver content of 25 ppm by mass or less, an intermetallic compound layer is formed at the bonding interface between the copper bonding wire and the electrode when bonding to an aluminum electrode. (Ag2 Al) can be prevented from being formed, and deterioration of corrosion resistance in a wet environment can be suppressed. (Example of change)
  • the copper bonding wire containing gold and sulfur has been described. However, in addition to gold and sulfur, at least one of palladium and platinum may be further contained. By adding palladium and platinum in combination with 0.5% to 5.0% by weight of gold, the corrosion resistance of the 1st joint is improved.
  • a copper alloy having a composition as shown in Table 1 below is dissolved, and a rod-shaped ingot having a diameter of 8 mm by a continuous casting method. was made.
  • the produced rod-shaped ingot was drawn to reduce the diameter until the diameter reached 20 ⁇ m, and then subjected to a tempering heat treatment to form a copper bonding wire.
  • Comparative Example 1 in which the gold content is less than 0.5% by mass, a FAB having a high sphericity cannot be formed in a nitrogen gas atmosphere, and the sphericity of the formed FAB is low. The shape of the joint could not be controlled to be circular. Further, in Comparative Example 1, in the highly accelerated life test performed under high temperature and high humidity conditions, the 1st joint was liable to deteriorate and there was a problem in corrosion resistance. In Comparative Example 2 in which the gold content exceeds 5.0% by mass, the amount of expensive noble metal used is increased and the wire becomes expensive.
  • Comparative Example 3 in which the sulfur content is less than 1 mass ppm, the shape of the first joint cannot be controlled to be circular, and in Comparative Example 4 in which the sulfur content exceeds 15 mass ppm, There was a problem in the corrosion resistance of the wire because it was easily oxidized.

Abstract

Provided is a copper bonding wire with which an FAB having a satisfactory shape can be formed even when nitrogen gas is used as the atmosphere gas during FAB formation, and a satisfactory circle can be obtained for the shape of the FAB when brought into contact with an electrode and crushed. This invention has a gold content of 0.5-5.0 mass% and a sulfur content of 1-15 mass ppm, with the remainder made up by copper and unavoidable impurities.

Description

銅ボンディングワイヤCopper bonding wire
　本発明は、半導体素子の電極と基板の電極とを接続する銅ボンディングワイヤに関する。 The present invention relates to a copper bonding wire for connecting a semiconductor element electrode and a substrate electrode.
　一般に半導体素子上の電極と、基板の電極との結線に用いられるボンディングワイヤは非常に細いため、導電性が良く、加工性に優れた金属材料が用いられている。特に、化学的な安定性や大気中での取り扱いやすさから、従来は金（Ａｕ）製の金ボンディングワイヤが用いられているが、金ボンディングワイヤは重量の９９％以上が金であり非常に高価であるため、より安価な銅（Ｃｕ）製の銅ボンディングワイヤの使用が望まれている。 Generally, a bonding wire used for connecting an electrode on a semiconductor element and an electrode on a substrate is very thin, and therefore a metal material having good conductivity and excellent workability is used. In particular, gold bonding wires made of gold (Au) have been used in the past because of their chemical stability and ease of handling in the atmosphere. Since it is expensive, it is desired to use a copper bonding wire made of less expensive copper (Cu).
　しかしながら、銅ボンディングワイヤは、半導体素子の電極へボールボンディングする際に真球度の高い良好な形状のボール（ＦＡＢ：Ｆｒｅｅ　Ａｉｒ　Ｂａｌｌ）を形成するために、可燃性ガスである水素を窒素に混合したフォーミングガス雰囲気でＦＡＢを成形する必要があり、十分安全性に配慮した施設を準備しなければならない。 However, the copper bonding wire mixes hydrogen, which is a flammable gas, with nitrogen in order to form a well-shaped ball (FAB: Free Air Ball) with high sphericity when ball-bonding to an electrode of a semiconductor element. It is necessary to mold the FAB in the forming gas atmosphere, and a facility with sufficient safety considerations must be prepared.
　これに対して、ＦＡＢ形成時の雰囲気ガスを窒素ガスとした場合でも良好な形状のＦＡＢを形成するため、Ｃｌの含有量が２質量ｐｐｍ以下であり２質量％以上７．５質量％以下のＡｕを含有する銅ボンディングワイヤが提案されている（例えば、下記特許文献１参照）。 On the other hand, in order to form a FAB having a good shape even when the atmosphere gas at the time of FAB formation is nitrogen gas, the Cl content is 2 mass ppm or less, and 2 mass% or more and 7.5 mass% or less. A copper bonding wire containing Au has been proposed (see, for example, Patent Document 1 below).
　ところで、ボールボンディングでは、フォーミングガス雰囲気でボンディングワイヤの先端に形成したＦＡＢを電極に押し当てて潰した後、熱エネルギー及び振動エネルギーを与えて１ｓｔ接合を行うが、近年の半導体素子の高密度化に伴い、電極のファインピッチ化が進んでおり、ＦＡＢを電極に押し当て潰した時に形成される１ｓｔ接合部の形状を円形に制御して隣接する電極間での短絡を防止することが求められている。しかし、下記特許文献１の銅ボンディングワイヤでは、１ｓｔ接合部の形状を制御しにくく、ファインピッチ化に対応しにくいという問題がある。 By the way, in ball bonding, the FAB formed at the tip of the bonding wire is pressed against the electrode in a forming gas atmosphere and crushed, and then the 1st bonding is performed by applying thermal energy and vibration energy. Accordingly, the fine pitch of the electrodes has been advanced, and it is required to prevent the short-circuit between adjacent electrodes by controlling the shape of the first joint formed when the FAB is pressed against the electrodes to be circular. ing. However, the copper bonding wire disclosed in Patent Document 1 has a problem in that it is difficult to control the shape of the first joint and it is difficult to cope with fine pitch.
特開２０１１－３７４５号公報JP 2011-3745 A
　本発明は、上記の問題を考慮してなされたものであり、ＦＡＢ形成時の雰囲気ガスを窒素ガスとした場合でも良好な形状のＦＡＢを形成することができるとともに、ＦＡＢを電極に接触させ潰した時に形成される１ｓｔ接合部の形状を良好な円形とすることができる銅ボンディングワイヤを提供することを目的とする。 The present invention has been made in consideration of the above-mentioned problems, and can form a FAB having a good shape even when the atmosphere gas at the time of forming the FAB is nitrogen gas. An object of the present invention is to provide a copper bonding wire in which the shape of the first joint formed at the time can be a good circular shape.
　上記課題を解決するため、本発明に係る銅ボンディングワイヤは、金の含有量が０．５質量％以上５．０質量％以下、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下であり、残部が銅及び不可避不純物からなることを特徴とする。 In order to solve the above problems, the copper bonding wire according to the present invention has a gold content of 0.5 mass% to 5.0 mass%, and a sulfur content of 1 massppm to 15 massppm, The balance is made of copper and inevitable impurities.
　上記した本発明の銅ボンディングワイヤでは、金を０．５％以上含有することにより、ＦＡＢ形成時の雰囲気を窒素ガスのみとしても真球度の高いＦＡＢを得ることができるとともに、硫黄を所定量添加することで、ＦＡＢを電極に接触させ潰した時に形成される１ｓｔ接合部の形状を良好な円形とすることができ、電極間の距離が小さい場合であっても隣接する電極が短絡しにくい。 In the above-mentioned copper bonding wire of the present invention, by containing 0.5% or more of gold, it is possible to obtain FAB with high sphericity even if the atmosphere at the time of FAB formation is only nitrogen gas, and a predetermined amount of sulfur. By adding, the shape of the 1st junction formed when the FAB is brought into contact with the electrodes and crushed can be made into a good circular shape, and even when the distance between the electrodes is small, the adjacent electrodes are not easily short-circuited. .
　他の本発明に係る銅ボンディングワイヤは、金の含有量が０．５質量％以上５．０質量％以下、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下、銀の含有量が２５質量ｐｐｍ以下であり、残部が銅及び不可避不純物からなることを特徴とする。 Another copper bonding wire according to the present invention has a gold content of 0.5 mass% to 5.0 mass%, a sulfur content of 1 massppm to 15 massppm, and a silver content of 25 mass%. It is ppm or less, and the remainder consists of copper and inevitable impurities.
　他の本発明に係る銅ボンディングワイヤは、金の含有量が０．５質量％以上、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下、であり、更に、パラジウム及び白金の少なくとも一方を含有し、金、パラジウム、及び白金の含有量の合計が５．０質量％以下であり、残部が銅及び不可避不純物からなることを特徴とする。 Another copper bonding wire according to the present invention has a gold content of 0.5 mass% or more, a sulfur content of 1 massppm or more and 15 massppm or less, and further contains at least one of palladium and platinum. The total content of gold, palladium, and platinum is 5.0% by mass or less, and the balance is made of copper and inevitable impurities.
　本発明では、ＦＡＢ形成時の雰囲気ガスを窒素ガスとした場合でも良好な形状のＦＡＢを形成することができるとともに、ＦＡＢを電極に接触させ潰した時に形成される１ｓｔ接合部の形状を良好な円形とすることができる。 In the present invention, even when the atmospheric gas at the time of FAB formation is nitrogen gas, it is possible to form a FAB having a good shape, and the shape of the 1st junction formed when the FAB is brought into contact with the electrode and crushed is good. It can be circular.
　以下、本発明の一実施形態について説明する。 Hereinafter, an embodiment of the present invention will be described.
　本実施形態の銅ボンディングワイヤは、０．５質量％以上５．０質量％以下の金と、１質量ｐｐｍ以上１５質量ｐｐｍ以下の硫黄を含有し、残部が銅及び不可避不純物からなるものである。なお、本実施形態に係る銅ボンディングワイヤの線径は、用途に応じて種々の大きさとしてよいが、例えば、１０～５０μｍとすることができる。 The copper bonding wire of this embodiment contains 0.5 mass% or more and 5.0 mass% or less of gold and 1 massppm or more and 15 massppm or less of sulfur, and the balance is made of copper and inevitable impurities. . Note that the wire diameter of the copper bonding wire according to the present embodiment may be various sizes depending on the application, but may be, for example, 10 to 50 μm.
　具体的には、金を添加することにより、窒素ガス含有率の高い雰囲気でボールボンディングする際にも真球度の高い良好な形状のＦＡＢを形成することができる。高純度の銅からなるボンディングワイヤでは、窒素ガス雰囲気で真球度の高いＦＡＢを安定的に得るのが難しい。しかし、金を０．５質量％以上含有すれば、窒素ガス雰囲気においても真球度の高いＦＡＢが形成される。 Specifically, by adding gold, it is possible to form a FAB having a high sphericity and a good shape even when ball bonding is performed in an atmosphere with a high nitrogen gas content. With a bonding wire made of high-purity copper, it is difficult to stably obtain a FAB having a high sphericity in a nitrogen gas atmosphere. However, when gold is contained in an amount of 0.5% by mass or more, FAB having high sphericity is formed even in a nitrogen gas atmosphere.
　また、高純度の銅からなるボンディングワイヤでは、高温高湿条件下で行う高度加速寿命試験（ＨＡＳＴ：Ｈｉｇｈｌｙ　Ａｃｃｅｌｅｒａｔｅｄ　Ｔｅｍｐｅｒａｔｕｒｅ　ａｎｄ　Ｈｕｍｉｄｉｔｙ　Ｓｔｒｅｓｓ　Ｔｅｓｔ）において、１ｓｔ接合部が劣化しやすく耐食性に問題があるが、金を０．５質量％以上含有することにより、１ｓｔ接合部の耐食性が向上する。 In addition, in a bonding wire made of high-purity copper, there is a problem in corrosion resistance because the first joint is likely to deteriorate in a highly accelerated life test (HAST: Highly Accelerated Temperature and Humidity Test). By containing 0.5% by mass or more of gold, the corrosion resistance of the first joint is improved.
　一方、金の含有量が５．０質量％を越えると高価な金の使用量が多くなり、ボンディングワイヤの電気抵抗率も高くなるが、５．０質量％以下であれば金の含有量が低くボンディングワイヤの製造コストを抑えることができるとともに、電気抵抗率が適切な範囲に維持される。 On the other hand, if the gold content exceeds 5.0 mass%, the amount of expensive gold used increases and the electrical resistivity of the bonding wire also increases. However, if the gold content is 5.0 mass% or less, the gold content is high. The manufacturing cost of the bonding wire can be kept low, and the electrical resistivity is maintained in an appropriate range.
　硫黄を添加することにより、塑性変形時に加工硬化を起こりやすくすることができる。高純度の銅からなるボンディングワイヤでは、先端に形成したＦＡＢを電極に押し当てた時にＦＡＢが容易に押し潰されてしまい、潰した時の１ｓｔ接合部の形状が定まりにくい。しかし、硫黄を含有する銅ボンディングワイヤでは、塑性変形時に加工硬化が起こり、電極に押し当て潰した時に形成される１ｓｔ接合部の形状を円形に制御しやすくなる。 By adding sulfur, work hardening can easily occur during plastic deformation. In a bonding wire made of high-purity copper, the FAB is easily crushed when the FAB formed at the tip is pressed against the electrode, and the shape of the first joint portion when crushed is difficult to determine. However, with a copper bonding wire containing sulfur, work hardening occurs during plastic deformation, and the shape of the first joint formed when pressed against an electrode is easily controlled to be circular.
　銅ボンディングワイヤが金を０．５質量％以上５．０質量％以下含有する場合に、硫黄の含有量が１質量ｐｐｍ未満であると塑性変形時の加工硬化が不十分なため、ＦＡＢを電極に押し当てた時にＦＡＢが容易に押し潰されてしまい１ｓｔ接合部の形状を円形に制御することができない。また、ＦＡＢを形成するためにワイヤを放電によって加熱するが、銅ボンディングワイヤが金を０．５質量％以上５．０質量％以下含有する場合に硫黄の含有量が１５質量ｐｐｍを越えると、ＦＡＢ形成時の熱によりワイヤが酸化しやすくなり、１ｓｔ接合後に行う２ｎｄ接合時に接合不良が発生しやすくなる。 When the copper bonding wire contains 0.5% by mass or more and 5.0% by mass or less of gold, if the sulfur content is less than 1 ppm by mass, the work hardening at the time of plastic deformation is insufficient, so the FAB is used as an electrode. The FAB is easily crushed when it is pressed against, so that the shape of the first joint cannot be controlled to be circular. Further, the wire is heated by electric discharge to form FAB. When the copper bonding wire contains gold in an amount of 0.5% by mass or more and 5.0% by mass or less, if the sulfur content exceeds 15 mass ppm, The wire is likely to be oxidized by heat at the time of FAB formation, and a bonding failure is likely to occur during the 2nd bonding performed after the 1st bonding.
　一方、銅ボンディングワイヤが金を０．５質量％以上５．０質量％以下含有する場合に、硫黄の含有量を１ｐｐｍ以上１５質量ｐｐｍ以下とすると、塑性変形時に加工硬化が起こり、電極に押し当て潰した時の１ｓｔ接合部の形状を円形に制御しやすくなるとともに、ＦＡＢを形成する際に熱を受けてもワイヤが酸化しにくく、２ｎｄ接合の接合性が良好となる。よって、本実施形態に係る銅ボンディングワイヤは、金を０．５質量％以上５．０質量％以下含有し、硫黄を１質量ｐｐｍ以上１５質量ｐｐｍ以下含有することが好ましい。 On the other hand, when the copper bonding wire contains 0.5% by mass or more and 5.0% by mass or less of gold, if the sulfur content is 1 ppm or more and 15% by mass or less, work hardening occurs during plastic deformation, which pushes the electrode. It becomes easy to control the shape of the 1st joint part when it is crushed to a circle, and the wire is not easily oxidized even when receiving heat when forming the FAB, and the joining property of the 2nd joint is improved. Therefore, it is preferable that the copper bonding wire which concerns on this embodiment contains gold 0.5 mass% or more and 5.0 mass% or less, and contains sulfur 1 mass ppm or more and 15 mass ppm or less.
　また、ＰＢＧＡ（Ｐｌａｓｔｉｃ Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ ｐａｃｋａｇｅ）やＱＦＮ（Ｑｕａｄ Ｆｌａｔ Ｎｏｎ－ｌｅａｄ ｐａｃｋａｇｅ）等の半導体素子では、電極材料としてアルミニウムやアルミニウム合金からなるアルミニウム電極が主流であるが、このようなアルミニウム電極に対して銅ボンディングワイヤを適用する場合、銅ボンディングワイヤに含まれる銀と電極中のアルミニウムの金属間化合物層（Ａｇ2
Ａｌ）が接合界面に形成される。この金属間化合物層が成長すると、湿潤環境下における耐食性が劣化する。そのため、銅ボンディングワイヤの銀の含有量は、少なければ少ないほどよいが、２５質量ｐｐｍ以下であればＡｇ2
Ａｌの生成が抑制でき、湿潤環境下における耐食性の劣化を抑えることができる。 Also, in semiconductor elements such as PBGA (Plastic Ball Grid Array package) and QFN (Quad Flat Non-lead package), aluminum electrodes made of aluminum or aluminum alloys are mainly used as electrode materials. When using a copper bonding wire, an intermetallic compound layer (Ag2) of silver contained in the copper bonding wire and aluminum in the electrode
Al) is formed at the bonding interface. When this intermetallic compound layer grows, the corrosion resistance in a wet environment deteriorates. Therefore, the lower the silver content of the copper bonding wire, the better. However, if it is 25 mass ppm or less, Ag2
Generation of Al can be suppressed, and deterioration of corrosion resistance in a humid environment can be suppressed.
　次に、このような構成のボンディングワイヤの製造方法の一例を説明する。 Next, an example of a manufacturing method of the bonding wire having such a configuration will be described.
　まず、純度９９．９９質量％以上であり、銀の含有量が２５質量ｐｐｍ以下の銅に、金を０．５～５．０質量％添加し、硫黄を１質量ｐｐｍ～１５質量ｐｐｍ添加した銅合金を鋳造した後、連続鋳造法にて所定の径の棒状インゴットを作製する。 First, 0.5 to 5.0 mass% of gold and 1 to 15 mass ppm of sulfur were added to copper having a purity of 99.99 mass% or more and a silver content of 25 mass ppm or less. After casting the copper alloy, a rod-shaped ingot having a predetermined diameter is produced by a continuous casting method.
　次いで、棒状インゴットを伸線加工して所定の直径（例えば、１０～５０μｍ）に達するまで縮径して銅ボンディングワイヤとする。なお、必要に応じて伸線加工の途中で軟化熱処理を行っても良い。 Next, the rod-shaped ingot is drawn to reduce the diameter until it reaches a predetermined diameter (for example, 10 to 50 μm) to obtain a copper bonding wire. In addition, you may perform softening heat processing in the middle of a wire drawing process as needed.
　そして、所定の直径まで伸線加工を行った後、熱処理炉中を走行させて調質熱処理を行い、全ての熱処理を終了する。なお、調質熱処理の一例を挙げると、窒素ガス雰囲気において３００～８００℃で０．１～１０秒間連続焼鈍する。 Then, after drawing to a predetermined diameter, it is run in a heat treatment furnace to perform tempering heat treatment, and all heat treatment is completed. As an example of tempering heat treatment, continuous annealing is performed at 300 to 800 ° C. for 0.1 to 10 seconds in a nitrogen gas atmosphere.
　本実施形態の銅ボンディングワイヤは、銅ボンディングワイヤにおいて、０．５質量％以上５．０質量％以下の金を含有するため、窒素ガス雰囲気でも真球度の高いＦＡＢを形成することができるとともに、１ｓｔ接合部の耐食性を向上させることができる。 Since the copper bonding wire of the present embodiment contains 0.5% by mass or more and 5.0% by mass or less of gold in the copper bonding wire, a FAB having a high sphericity can be formed even in a nitrogen gas atmosphere. The corrosion resistance of the first joint can be improved.
　しかも、本実施形態の銅ボンディングワイヤは、０．５質量％以上５．０質量％以下の金に加えて１質量ｐｐｍ以上１５質量ｐｐｍ以下の硫黄を含有するため、電極に押し当て潰した時に形成されるＦＡＢの形状を円形に制御しやすくなるとともに、ＦＡＢを形成する際の熱によりワイヤが酸化しにくく、２ｎｄ接合の接合性が良好となる。 And since the copper bonding wire of this embodiment contains 1 mass ppm or more and 15 mass ppm or less sulfur in addition to 0.5 mass% or more and 5.0 mass% or less gold | metal | money, The shape of the FAB to be formed can be easily controlled to be circular, and the wire is not easily oxidized by the heat at the time of forming the FAB, and the bondability of the 2nd junction is improved.
　また、本実施形態の銅ボンディングワイヤは、銀の含有量が２５質量ｐｐｍ以下に抑えられているため、アルミニウム電極に対してボンディングする場合に銅ボンディングワイヤと電極との接合界面に金属間化合物層（Ａｇ2
Ａｌ）が形成されるのを抑制することができ、湿潤環境下における耐食性の劣化を抑えることができる。（変更例）
　上記した実施形態では、金及び硫黄を含有する銅ボンディングワイヤについて説明したが、金及び硫黄に加えてパラジウム及び白金の少なくとも一方を更に含有してもよい。０．５質量％～５．０質量％の金とともにパラジウムや白金を複合して添加することで１ｓｔ接合部の耐食性が向上する。 Further, since the copper bonding wire of this embodiment has a silver content of 25 ppm by mass or less, an intermetallic compound layer is formed at the bonding interface between the copper bonding wire and the electrode when bonding to an aluminum electrode. (Ag2
Al) can be prevented from being formed, and deterioration of corrosion resistance in a wet environment can be suppressed. (Example of change)
In the above embodiment, the copper bonding wire containing gold and sulfur has been described. However, in addition to gold and sulfur, at least one of palladium and platinum may be further contained. By adding palladium and platinum in combination with 0.5% to 5.0% by weight of gold, the corrosion resistance of the 1st joint is improved.
　金、パラジウム、及び白金の含有量の合計が５．０質量％を越えても耐食性は良好であるが、高価な貴金属であるので５．０質量％以下にすることによりボンディングワイヤの製造コストを抑えることができる。 Even if the total content of gold, palladium and platinum exceeds 5.0% by mass, the corrosion resistance is good, but since it is an expensive noble metal, the production cost of the bonding wire is reduced by making it 5.0% by mass or less. Can be suppressed.
　以上、本発明の実施形態を説明したが、これらの実施形態は例として提示したものであり、発明の範囲を限定することを意図していない。これらの実施形態は、その他の様々な形態で実施されることが可能であり、発明の趣旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これらの実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。 As mentioned above, although embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the invention described in the claims and equivalents thereof as well as included in the scope and gist of the invention.
　以下、本発明を実施例によって更に具体的に説明するが、本発明はこれら実施例に限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.
　純度９９．９９質量％以上の銅原料及び純度９９．９９９９質量％以上の銅原料を用いて、下記表１に示すような組成の銅合金を溶解し、連続鋳造法にて直径８ｍｍの棒状インゴットを作製した。作製した棒状インゴットに対して伸線加工を施して直径２０μｍに達するまで縮径し、その後、調質熱処理を施して銅ボンディングワイヤを成形した。 Using a copper raw material with a purity of 99.99 mass% or more and a copper raw material with a purity of 99.9999 mass% or more, a copper alloy having a composition as shown in Table 1 below is dissolved, and a rod-shaped ingot having a diameter of 8 mm by a continuous casting method. Was made. The produced rod-shaped ingot was drawn to reduce the diameter until the diameter reached 20 μm, and then subjected to a tempering heat treatment to form a copper bonding wire.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　作成した実施例１～２１及び比較例１～４のボンディングワイヤについて、ＦＡＢ形状の安定性、１ｓｔ接合の真円性、ワイヤの耐食性（ＨＴＳＴ：Ｈｉｇｈ　Ｔｅｍｐｅｒａｔｕｒｅ　Ｓｔｏｒａｇｅ　Ｔｅｓｔ）、１ｓｔ接合部の耐食性（ＨＡＳＴ）、経済性、及び総合評価を評価した。それぞれの評価方法等は以下のとおりである。 About the created bonding wires of Examples 1 to 21 and Comparative Examples 1 to 4, the stability of the FAB shape, the roundness of the first joint, the corrosion resistance of the wire (HTST: High Temperature Storage Test), the corrosion resistance of the first joint (HAST) ), Economic efficiency, and comprehensive evaluation. Each evaluation method is as follows.
（１）ＦＡＢ形状の安定性
　ワイヤボンダで線径の１．７倍の大きさのＦＡＢを窒素ガス雰囲気でそれぞれ１００個作製し、ＦＡＢのワイヤと平行な方向と直角な方向の直径を測定した。作製した１００個のＦＡＢ全てにおいて、平行な方向と直角な方向の直径の差が２μｍ以下であれば真球に近いと考えて「Ａ」、２μｍを超え１０μｍ以下のＦＡＢが１個でもあれば「Ｂ」、１０μｍを超えるか、球状にならないＦＡＢが１個でもあれば真球度が低いと考えて「Ｄ」とした。 (1) Stability of the FAB shape 100 FABs each having a wire diameter of 1.7 times the wire diameter were produced in a nitrogen gas atmosphere, and the diameter in a direction perpendicular to the direction parallel to the FAB wire was measured. In all 100 FABs produced, if the difference in diameter between the direction parallel to the direction perpendicular to the parallel direction is 2 μm or less, it is considered to be close to a true sphere. “B” is considered to be “D” because the sphericity is low if it exceeds 10 μm or there is even one FAB that does not become spherical.
（２）１ｓｔ接合部の真円性
　ワイヤボンダで作製した１００個のＦＡＢを電極に押し当てて１ｓｔ接合部の直径がＦＡＢの直径の１．５倍の大きさになるようにボンディングを行い、１ｓｔ接合部の直交する２方向の直径を測定した。１００個のＦＡＢ全てにおいて１ｓｔ接合部の2方向の直径の差が５μｍ以下であれば「Ａ」、５μｍを超えて１５μｍ以下の１ｓｔ接合部が１個でもあれば「Ｂ」、１５μｍを超える１ｓｔ接合部が１個でもあれば真円性が低くファインピッチ用途に不適と考えて「D」とした。 (2) Roundness of the 1st junction part 100 FABs produced by the wire bonder are pressed against the electrodes, and bonding is performed so that the diameter of the 1st junction part is 1.5 times the diameter of the FAB. The diameters in two directions perpendicular to the joint were measured. In all 100 FABs, “A” if the difference in diameter in the two directions of the 1st junction is 5 μm or less, “B” if there is even one 1st junction exceeding 5 μm and 15 μm or less, 1st exceeding 15 μm If there was only one joint, the roundness was low and it was considered unsuitable for fine pitch applications, and was designated as “D”.
（３）ワイヤの耐食性（ＨＴＳＴ）
　３本のボンディングワイヤを１５０℃の炉中で３０秒間加熱し、加熱前後のワイヤの表面に存在する酸化銅の厚さをＳＥＲＡ法（連続電気化学還元法）で測定した。加熱後の３本のワイヤ表面に存在する酸化銅の厚さの平均値が加熱前の２倍以下であれば、耐食性が良好と考えて「Ａ」、２倍を超えると耐食性に問題があると考えて「Ｄ」とした。 (3) Corrosion resistance of wires (HTST)
Three bonding wires were heated in a furnace at 150 ° C. for 30 seconds, and the thickness of copper oxide present on the surface of the wire before and after heating was measured by the SERA method (continuous electrochemical reduction method). If the average value of the thickness of the copper oxide present on the surface of the three wires after heating is 2 times or less that before heating, the corrosion resistance is considered to be good, and if it exceeds 2 times, there is a problem with the corrosion resistance. It was considered as “D”.
（４）１ｓｔ接合部の耐食性（ＨＡＳＴ）
　１０本のボンディングワイヤを電極へボンディングした後、温度１３０℃で湿度８５％の試験槽中に１６８時間挿入し、１６８時間経過後のシェア強度ＳＳａを初期のシェア強度ＳＳｂで除した割合Ｒ（＝（ＳＳａ／ＳＳｂ）×１００）を用いて評価した。Ｒの平均値が７０％以上なら耐食性があると考えて「Ａ」、７０％未満となれば耐食性に問題があると考えて「Ｄ」とした。 (4) 1st joint corrosion resistance (HAST)
After bonding 10 bonding wires to the electrode, the ratio R (= (SSa / SSb) × 100). If the average value of R is 70% or more, it is considered that there is corrosion resistance, and if it is less than 70%, it is considered that there is a problem in the corrosion resistance, and is set as “D”.
（５）経済性
　作製した各ボンディングワイヤの金、パラジウム、及び白金の含有量の合計が、５．０質量％以下であれば高価な貴金属の含有量が低くボンディングワイヤの製造コストを抑えることができると考えて「Ａ」、５．０質量％を越えると高価な貴金属の使用量が多くなりワイヤが高価となるため「Ｄ」とした。 (5) Economic efficiency If the total content of gold, palladium, and platinum in each of the produced bonding wires is 5.0% by mass or less, the content of expensive noble metals is low and the manufacturing cost of the bonding wires can be suppressed. “A” is considered to be possible, and if it exceeds 5.0 mass%, the amount of expensive noble metal used increases and the wire becomes expensive, so “D”.
（６）総合評価
　上記（１）～（５）の評価が、すべて「A」であれば「A」、ひとつでも「B」があると「B」、またひとつでも「D」があると「D」とした。 (6) Comprehensive evaluation If the evaluations in (1) to (5) above are all “A”, “A”, “B” if there is one “B”, “D” if any one is “D” D ”.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　結果は、表２に示すとおりであり、実施例１～２１では、ＦＡＢ形状の安定性、１ｓｔ接合の真円性、ワイヤの耐食性、１ｓｔ接合部の耐食性、及び経済性について良好な結果が得られた。 The results are shown in Table 2. In Examples 1 to 21, good results were obtained with respect to the stability of the FAB shape, the roundness of the 1st joint, the corrosion resistance of the wire, the corrosion resistance of the 1st joint, and the economy. It was.
　一方、金の含有量が０．５質量％未満である比較例１では、窒素ガス雰囲気において真球度の高いＦＡＢを形成することができず、形成されたＦＡＢの真球度が低いため１ｓｔ接合部の形状を円形に制御することができなかった。また、比較例１では、高温高湿条件下で行う高度加速寿命試験において、１ｓｔ接合部が劣化しやすく耐食性に問題があった。金の含有量が５．０質量％を越える比較例２では、高価な貴金属の使用量が多くなりワイヤが高価となった。 On the other hand, in Comparative Example 1 in which the gold content is less than 0.5% by mass, a FAB having a high sphericity cannot be formed in a nitrogen gas atmosphere, and the sphericity of the formed FAB is low. The shape of the joint could not be controlled to be circular. Further, in Comparative Example 1, in the highly accelerated life test performed under high temperature and high humidity conditions, the 1st joint was liable to deteriorate and there was a problem in corrosion resistance. In Comparative Example 2 in which the gold content exceeds 5.0% by mass, the amount of expensive noble metal used is increased and the wire becomes expensive.
　また、硫黄の含有量が１質量ｐｐｍ未満である比較例３では、１ｓｔ接合部の形状を円形に制御することができず、硫黄の含有量が１５質量ｐｐｍを越える比較例４では、熱によりワイヤが酸化しやすくワイヤの耐食性に問題があった。 Further, in Comparative Example 3 in which the sulfur content is less than 1 mass ppm, the shape of the first joint cannot be controlled to be circular, and in Comparative Example 4 in which the sulfur content exceeds 15 mass ppm, There was a problem in the corrosion resistance of the wire because it was easily oxidized.
　本国際出願は、２０１５年１２月２４日に出願された日本国特許出願である特願２０１４－２６０９００号に基づく優先権を主張するものであり、当該日本国特許出願である特願２０１４－２６０９００号の全内容は、本国際出願に援用される。 This international application claims priority based on Japanese Patent Application No. 2014-260900 filed on December 24, 2015, which is Japanese Patent Application No. 2014-260900. The entire contents of the issue are incorporated into this international application.
　このように、今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。この発明の範囲は、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。

  Thus, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

Claims (4)

  1. 　金の含有量が０．５質量％以上５．０質量％以下、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。 A copper bonding wire characterized in that the gold content is 0.5 mass% or more and 5.0 mass% or less, the sulfur content is 1 massppm or more and 15 massppm or less, and the balance is made of copper and inevitable impurities. .
  2. 　金の含有量が０．５質量％以上５．０質量％以下、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下、銀の含有量が２５質量ｐｐｍ以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。 The gold content is 0.5 mass% to 5.0 mass%, the sulfur content is 1 massppm to 15 massppm, the silver content is 25 massppm or less, and the balance is copper and inevitable impurities A copper bonding wire characterized by comprising:
  3. 　金の含有量が０．５質量％以上、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下、であり、更に、パラジウム及び白金の少なくとも一方を含有し、金、パラジウム、及び白金の含有量の合計が５．０質量％以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。 The gold content is 0.5 mass% or more, the sulfur content is 1 mass ppm or more and 15 mass ppm or less, and further contains at least one of palladium and platinum, and the contents of gold, palladium, and platinum The copper bonding wire is characterized in that the total amount is 5.0 mass% or less, and the balance is made of copper and inevitable impurities.
  4. 　金の含有量が０．５質量％以上、硫黄の含有量が１質量ｐｐｍ以上１５質量ｐｐｍ以下、銀の含有量が２５質量ｐｐｍ以下であり、更に、パラジウム及び白金の少なくとも一方を含有し、金、パラジウム、及び白金の含有量の合計が５．０質量％以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。

          The gold content is 0.5 mass% or more, the sulfur content is 1 mass ppm or more and 15 mass ppm or less, the silver content is 25 mass ppm or less, and further contains at least one of palladium and platinum, A copper bonding wire characterized in that the total content of gold, palladium, and platinum is 5.0 mass% or less, and the balance is made of copper and inevitable impurities.

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* Cited by examiner, † Cited by third party
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163194A (en) * 1985-01-09 1986-07-23 Toshiba Corp Bonding wire for semiconductor element
JP2012222194A (en) * 2011-04-11 2012-11-12 Sumitomo Metal Mining Co Ltd Copper bonding wire

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04184946A (en) * 1990-11-20 1992-07-01 Mitsubishi Materials Corp Very thin wire of copper alloy for semiconductor device, and semiconductor device
JP5270467B2 (en) * 2009-06-18 2013-08-21 タツタ電線株式会社 Cu bonding wire
JP5219316B1 (en) * 2012-09-28 2013-06-26 田中電子工業株式会社 Copper platinum alloy wire for semiconductor device connection
US20140302342A1 (en) * 2013-04-04 2014-10-09 Hitachi Metals, Ltd. Copper wire and method of manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163194A (en) * 1985-01-09 1986-07-23 Toshiba Corp Bonding wire for semiconductor element
JP2012222194A (en) * 2011-04-11 2012-11-12 Sumitomo Metal Mining Co Ltd Copper bonding wire

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3667709A4 (en) * 2017-08-09 2021-06-09 NIPPON STEEL Chemical & Material Co., Ltd. Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

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