TWI579095B - Copper wire - Google Patents

Copper wire Download PDF

Info

Publication number
TWI579095B
TWI579095B TW101125590A TW101125590A TWI579095B TW I579095 B TWI579095 B TW I579095B TW 101125590 A TW101125590 A TW 101125590A TW 101125590 A TW101125590 A TW 101125590A TW I579095 B TWI579095 B TW I579095B
Authority
TW
Taiwan
Prior art keywords
wire
copper
ppm
mass
grain size
Prior art date
Application number
TW101125590A
Other languages
Chinese (zh)
Other versions
TW201306985A (en
Inventor
Hideyuki Sagawa
Seigi Aoyama
Hiromitsu Kuroda
Toru Sumi
Keisuke Fujito
Ryohei Okada
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of TW201306985A publication Critical patent/TW201306985A/en
Application granted granted Critical
Publication of TWI579095B publication Critical patent/TWI579095B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45014Ribbon connectors, e.g. rectangular cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45618Zinc (Zn) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655Nickel (Ni) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669Platinum (Pt) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Description

銅銲線 Brazing wire

本發明有關具有高抗拉強度、伸長率,並且硬度小的新穎的銅銲線。 The present invention relates to a novel brazing wire having high tensile strength, elongation, and low hardness.

以往,在將半導體元件的電極與外部引線連接的銲接線中,使用Au線或Al合金線。特別是,在樹脂模類型的半導體元件中,從連接可靠性的觀點出發,使用ψ 0.025mm左右的Au線。此外,近年來,作為汽車用功率模組的銲接線,使用ψ 0.3mm左右的Al線。 Conventionally, an Au wire or an Al alloy wire is used for a bonding wire connecting an electrode of a semiconductor element and an external lead. In particular, in the resin element type semiconductor element, an Au line of about 0.025 mm is used from the viewpoint of connection reliability. Further, in recent years, as a welding wire for a power module for an automobile, an Al wire of about 0.3 mm is used.

Au線具有優異的導電性、耐蝕性、軟質性,另一方面成本非常高。因此,提出了將銅(Cu)作為原材料的銲接線。 The Au wire has excellent electrical conductivity, corrosion resistance, and softness, and on the other hand, the cost is very high. Therefore, a welding wire using copper (Cu) as a raw material has been proposed.

專利文獻1中已知藉由電解精煉和區域熔煉法(zone melting法)而高純度化成純度99.999質量%以上的銲接用銅細線。 Patent Document 1 discloses a copper thin wire for welding which is highly purified to a purity of 99.999 mass% or more by electrolytic refining and zone melting.

專利文獻2中顯示了一種銅銲線,其使用反復純化而使不可避免的雜質為10ppm以下的無氧銅,由包含選自由Ti、Zr、Hf、V、Cr、Mn和B所組成的群組中的添加元素且其餘部分為銅的銅合金構成,熱軋、冷軋後,利用200~300℃、1~2秒的輝面熱處理而製造成直徑25μm。 Patent Document 2 discloses a brazing wire which is an oxygen-free copper having an unavoidable impurity of 10 ppm or less by repeated purification, and comprising a group selected from the group consisting of Ti, Zr, Hf, V, Cr, Mn, and B. The additive element in the group is composed of a copper alloy of copper, and after hot rolling and cold rolling, it is made to have a diameter of 25 μm by heat treatment at 200 to 300 ° C for 1 to 2 seconds.

專利文獻3中顯示了Hv為41.1~49.5的銅銲線,其使用反復純化而使不可避免的雜質為10ppm以下的無氧銅,由包含選自由Mg、Ca、Be、Ge和Si所組成的群組中的添加元素且其餘部分為由銅的銅合金構成,熱軋、冷軋後,利用200~300℃、1~2秒的輝面熱處理而製造成直徑25μm。 Patent Document 3 discloses a brazing wire having an Hv of 41.1 to 49.5, which is an oxygen-free copper having an unavoidable impurity of 10 ppm or less by repeated purification, and comprising a material selected from the group consisting of Mg, Ca, Be, Ge, and Si. The added elements in the group and the remainder are made of a copper alloy of copper. After hot rolling and cold rolling, the surface is made to have a diameter of 25 μm by heat treatment at 200 to 300 ° C for 1 to 2 seconds.

專利文獻4~7中顯示了使用反復純化而使不可避免的雜質為5ppm以下或10ppm以下的無氧銅,由包含選自由S、Se、Te、Ag所組成的群組中的添加元素且其餘部分為銅的銅合金構成,熱軋、冷軋後,專利文獻4中利用250~350℃、0.5~1.5秒的輝面熱處理而製造成直徑25μm的銅銲線,專利文獻5中利用300~400℃、1~2秒的輝面熱處理而製造成直徑25μm的銅銲線,專利文獻6中利用300~400℃、1~2秒的輝面熱處理而製造成直徑25μm的銅銲線,專利文獻7中利用250~380℃、1.5秒的輝面熱處理而製造成直徑25μm的銅銲線。 Patent Literatures 4 to 7 show that oxygen-free copper having an unavoidable impurity of 5 ppm or less or 10 ppm or less by repeated purification is composed of an additive element selected from the group consisting of S, Se, Te, and Ag and the rest. In the case of hot rolling and cold rolling, Patent Document 4 uses a surface heat treatment of 250 to 350 ° C for 0.5 to 1.5 seconds to produce a copper wire having a diameter of 25 μm. Patent Document 5 uses 300 to 300. A copper wire having a diameter of 25 μm is produced by heat treatment at 400 ° C for 1 to 2 seconds, and a copper wire having a diameter of 25 μm is produced by heat treatment at 300 to 400 ° C for 1 to 2 seconds in Patent Document 6. In Document 7, a copper wire having a diameter of 25 μm was produced by heat treatment at 250 to 380 ° C for 1.5 seconds.

專利文獻8中顯示了一種半導體積體電路元件配線用銲接線,其在純度99.99質量%以上且小於99.999質量%的銅芯材上以整體的30~70體積%被覆有99.999質量%以上的銅。 In the case of a copper core material having a purity of 99.99% by mass or more and less than 99.999% by mass, the copper core material having a purity of 99.99% by mass or more and less than 99.999% by mass is coated with 99.999% by mass or more of copper as a whole. .

現有技術文獻 Prior art literature

專利文獻1:日本特開昭60-244054號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 60-244054

專利文獻2:日本特開昭61-259558號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 61-259558

專利文獻3:日本特開昭61-258463號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 61-258463

專利文獻4:日本特開昭62-22469號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 62-22469

專利文獻5:日本特開昭61-224443號公報 Patent Document 5: Japanese Laid-Open Patent Publication No. 61-224443

專利文獻6:日本特開昭62-2645號公報 Patent Document 6: Japanese Patent Laid-Open No. 62-2645

專利文獻7:日本特開昭62-94969號公報 Patent Document 7: Japanese Laid-Open Patent Publication No. 62-94969

專利文獻8:日本特開昭63-236338號公報 Patent Document 8: Japanese Laid-Open Patent Publication No. SHO 63-236338

專利文獻1中由純度99.99質量%水準的OFC(無氧銅)構成的銲接線由比Au硬的Cu構成,因此如果使用該銲接線,例如,與半導體元件(作為一例,矽晶片)上設置之作為電極焊墊的鋁焊墊銲接,則對鋁焊墊帶來破壞。 In Patent Document 1, a welding wire made of OFC (oxygen-free copper) having a purity of 99.99% by mass is made of Cu which is harder than Au. Therefore, if this welding wire is used, for example, it is provided on a semiconductor element (for example, a tantalum wafer). The aluminum pad welding as an electrode pad causes damage to the aluminum pad.

為了減少對鋁焊墊的破壞,如果對鋁焊墊施加過剩的熱能使得OFC(無氧銅)進一步軟質化,則由於銲接線的硬度與銲接線的伸長、抗拉強度處於消長的關係,因此雖然銲接線的硬度減少,但同時銲接線的伸長降低,此外,隨著銲接線的晶體組織(尺寸)粗大化,抗拉強度也降低。 In order to reduce the damage to the aluminum pad, if excessive heat is applied to the aluminum pad to further soften the OFC (oxygen-free copper), since the hardness of the bonding wire is in a relationship with the elongation and tensile strength of the bonding wire, Although the hardness of the weld line is reduced, at the same time, the elongation of the weld line is lowered, and in addition, as the crystal structure (size) of the weld line is coarsened, the tensile strength is also lowered.

即,如果銲接線的伸長降低,則銲接線本身的變形能力降低,因此有可能由於由線銲接後樹脂密封之後銲接線與密封樹脂材的熱膨脹差所產生的應力而損害銲接線與銲接物件物之間的連接可靠性,並且有可能從捲線筒向銲接部供給線時易於發生所謂線捲曲等捲曲行為,操作特性降低。 That is, if the elongation of the weld line is lowered, the deformability of the weld line itself is lowered, so that it is possible to damage the weld line and the welded object due to the stress generated by the difference in thermal expansion between the weld line and the sealing resin material after the resin sealing after wire bonding. There is a possibility of connection reliability when the connection is reliable, and it is possible to cause curling behavior such as wire curling when the wire is fed from the spool to the welded portion, and the operation characteristics are lowered.

此外,另一方面,如果銲接線的抗拉強度降低,則在進行銲接的情況下,有時在銲接時形成的熔融球的正上部(球頸部)的銲接線發生強度降低,導致斷裂。此外如果銲接線的抗拉強度降低,則有可能在反復經受溫度迴圈時,由於上述的銲接線與密封樹脂材的熱膨脹差而導致銲接線斷裂。即, 作為銲接線的疲勞特性降低。 On the other hand, when the tensile strength of the weld line is lowered, in the case of welding, the weld line of the upper portion (the ball neck portion) of the molten ball formed at the time of welding may be reduced in strength and may be broken. Further, if the tensile strength of the weld line is lowered, it is possible to cause the weld line to be broken due to the difference in thermal expansion between the above-described weld line and the sealing resin material when repeatedly subjected to the temperature loop. which is, The fatigue characteristics as a weld line are lowered.

為了解決這樣的問題,專利文獻2、3中,藉由在99.999質量%以上的高純度銅中添加微量(1~10ppm)的添加元素,在專利文獻4~7中,藉由在99.999質量%以上的高純度銅中添加微量(幾ppm)的添加元素,來調整銲接線的伸長率、抗拉強度和銲接線的原材料的硬度的平衡的嘗試一部分地進行,但對於將該導體原材料進行拉線加工和退火處理後的導體本身而言,其硬度小,無法實現維持軟質的特性並且兼備高伸長特性和抗拉強度的銅導體,仍有改善的餘地。 In order to solve such a problem, in Patent Documents 2 and 3, a trace amount (1 to 10 ppm) of an additive element is added to high-purity copper of 99.999 mass% or more, and in Patent Documents 4 to 7, by 99.999 mass% The above-mentioned high-purity copper is added with a small amount (a few ppm) of an additive element to adjust the balance between the elongation of the weld line, the tensile strength, and the hardness of the raw material of the weld line, but the conductor raw material is pulled. The conductor itself after the wire processing and the annealing treatment has a small hardness, and it is impossible to realize a copper conductor which maintains soft characteristics and has high elongation characteristics and tensile strength, and there is still room for improvement.

另外,專利文獻8中,與專利文獻1同樣地為由純度99.99質量%水準的OFC構成的銲接線,如果與半導體元件上設置之作為電極焊墊的鋁焊墊銲接,則對鋁焊墊帶來破壞。 Further, in Patent Document 8, as in Patent Document 1, a welding wire composed of OFC having a purity of 99.99% by mass is welded to an aluminum pad as an electrode pad provided on a semiconductor element, and the aluminum pad is bonded to the aluminum pad. To destroy.

本發明的目的是提供比無氧銅低成本,而且具有高導電性、抗拉強度和伸長率,並且硬度小的銅銲線。 SUMMARY OF THE INVENTION An object of the present invention is to provide a brazing wire which is low in cost compared with oxygen-free copper and which has high electrical conductivity, tensile strength and elongation, and which is low in hardness.

本發明有關一種銅銲線,其特徵在於,是由軟質低濃度銅合金材料構成的銅銲線,所述軟質低濃度銅合金材料(稀釋銅合金材料dilute copper alloy)包含選自由Ti、Mg、Zr、Nb、Ca、V、Ni、Mn和Cr所組成的群組中的添加元素且其餘部分為銅,所述銅銲線的晶體組織從其表面向內部直至線徑的20%的深度為止的平均晶粒尺寸為20μm以下。 The present invention relates to a copper bonding wire characterized by being a copper bonding wire composed of a soft low-concentration copper alloy material, and the soft low-concentration copper alloy material (diluted copper alloy material) is selected from the group consisting of Ti, Mg, An additive element in a group consisting of Zr, Nb, Ca, V, Ni, Mn, and Cr, and the balance being copper, and the crystal structure of the brazing wire is from the surface to the inside to a depth of 20% of the wire diameter. The average grain size is 20 μm or less.

此外,本發明的銅銲線較佳包含2質量ppm以上12質量ppm以下的硫、超過2質量ppm且為30質量ppm以下的氧、和4質量ppm以上55質量ppm以下的鈦。 Further, the brazing wire of the present invention preferably contains 2 mass ppm or more and 12 mass ppm or less of sulfur, more than 2 mass ppm and 30 mass ppm or less of oxygen, and 4 mass ppm or more and 55 mass ppm or less of titanium.

此外,本發明的銅銲線較佳具有與實施退火處理的無氧銅線相同或其以下的硬度,並且,伸長率的值的平均值具有比無氧銅線高1%以上的伸長率的值。 Further, the brazing wire of the present invention preferably has the same hardness as or less than the oxygen-free copper wire subjected to the annealing treatment, and the average value of the elongation values has an elongation of 1% or more higher than that of the oxygen-free copper wire. value.

此外,較佳具有與實施上述退火處理的無氧銅線相同或其以上的抗拉強度,並且,硬度的值具有比無氧銅線低2Hv以上的值。 Further, it is preferable to have the tensile strength equal to or higher than that of the oxygen-free copper wire subjected to the annealing treatment described above, and the value of the hardness has a value lower than the oxygen-free copper wire by 2 Hv or more.

此外,本發明的銅銲線較佳電導率為98%IACS以上,硫(S)和鈦(Ti)包含有TiO、TiO2、TiS或具有Ti-O-S結合的化合物、或者有TiO、TiO2、TiS或具有Ti-O-S結合的化合物的凝聚物,其餘部分的Ti和S可包含固 溶體。 In addition, the brazing wire of the present invention preferably has an electrical conductivity of 98% IACS or more, and the sulfur (S) and titanium (Ti) comprise TiO, TiO 2 , TiS or a compound having Ti-OS bonding, or TiO, TiO 2 . , TiS or agglomerates of compounds having Ti-OS bonds, the remaining portions of Ti and S may comprise solid solutions.

此外,較佳上述TiO、TiO2、TiS、Ti-O-S的形式的化合物或凝聚物分佈在晶粒內,TiO具有200nm以下的尺寸,TiO2具有1000nm以下的尺寸,TiS具有200nm以下的尺寸,Ti-O-S的形式的化合物或凝聚物具有300nm以下的尺寸,500nm以下的粒子為90%以上。 Further, it is preferred that the compound or aggregate in the form of TiO, TiO 2 , TiS, or Ti-OS is distributed in the crystal grains, the TiO has a size of 200 nm or less, the TiO 2 has a size of 1000 nm or less, and the TiS has a size of 200 nm or less. The compound or aggregate in the form of Ti-OS has a size of 300 nm or less, and particles of 500 nm or less are 90% or more.

本發明的銅銲線可以通過下述製造方法來製造,所述製造方法包括以下製程:將包含選自由Ti、Mg、Zr、Nb、Ca、V、Ni、Mn和Cr所組成的群組中之添加元素的軟質低濃度銅合金材料在1100℃以上1320℃以下的熔銅溫度製成熔液的熔液製造製程;由上述熔液製作盤條(wire rod)的盤條製作製程;在880℃以下550℃以上的溫度對上述盤條實施熱軋的熱軋製程;以及對經過上述熱軋製程的上述盤條實施拉線加工的拉線加工製程。 The brazing wire of the present invention can be produced by a manufacturing method including the following process: comprising a group selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn, and Cr a molten metal manufacturing process in which a soft low-concentration copper alloy material with an additive element is formed at a molten copper temperature of 1100 ° C or more and 1320 ° C or less; a wire rod manufacturing process for producing a wire rod from the above molten metal; at 880 ° C The hot rolling process of performing hot rolling on the wire rod at a temperature of 550 ° C or higher; and a wire drawing process for performing wire drawing on the wire rod subjected to the hot rolling process.

本發明的銅銲線的製造方法中,較佳上述添加元素為4質量ppm以上55質量ppm以下的Ti,上述軟質低濃度銅合金材料包含2質量ppm以上12質量ppm以下的硫、和超過2質量ppm且為30質量ppm以下的氧。 In the method for producing a brazing wire according to the present invention, it is preferable that the additive element is Ti of 4 ppm by mass or more and 55 ppm by mass or less, and the soft low-concentration copper alloy material contains 2 ppm by mass or more and 12 ppm by mass or less of sulfur, and more than 2 The mass is ppm and is 30 ppm by mass or less of oxygen.

本發明的銅銲線的製造方法中,較佳上述軟質低濃度銅合金材料的軟化溫度以ψ 2.6mm的尺寸為130℃以上148℃以下。 In the method for producing a brazing wire according to the present invention, it is preferable that the softening temperature of the soft low-concentration copper alloy material is 130 ° C or more and 148 ° C or less in a size of 2.6 2.6 mm.

(銅銲線的構成) (Composition of brazing wire) (1)關於添加元素 (1) About adding elements

本發明有關將包含選自由Ti、Mg、Zr、Nb、Ca、V、Ni、Mn和Cr所組成的群組中的添加元素且其餘部分為銅和不可避免的雜質的軟質低濃度銅合金材料進行拉線加工,接著實施退火處理而成的銅銲線。 The present invention relates to a soft low-concentration copper alloy material comprising an additive element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn, and Cr, and the balance being copper and unavoidable impurities. A wire bonding process is performed, followed by annealing to form a copper bonding wire.

作為添加元素,選擇選自由Ti、Mg、Zr、Nb、Ca、V、Ni、Mn和Cr所組成的群組中的元素的理由是,這些元素為易於與其它元素結合的活性元素,特別是易於與S結合,因此可以捕集S,可以將基體的銅母材高純度化,使原材料的硬度降低。此外,通過捕集S,還可獲得可以實現高導電性這樣的效果。添加元素包含1種或2種以上。此外,合金中也可以含有不會對合金的性質帶來不良影響的其它元素和雜質。 As an additive element, the reason for selecting an element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn, and Cr is that these elements are active elements that are easily combined with other elements, particularly Since it is easy to combine with S, it is possible to trap S, and it is possible to increase the purity of the copper base material of the substrate and to lower the hardness of the raw material. Further, by trapping S, it is also possible to obtain an effect that high conductivity can be achieved. The additive element contains one type or two or more types. Further, the alloy may contain other elements and impurities which do not adversely affect the properties of the alloy.

(2)關於組成比率 (2) About composition ratio

作為添加元素,Ti、Ca、V、Ni、Mn和Cr的1種或2種以上的合計含量為4~55質量ppm,更較佳為10~20質量ppm,Mg的含量為2~30質 量ppm,更較佳為5~10質量ppm,Zr、Nb的含量為8~100質量ppm,更較佳為20~40質量ppm。 As an additive element, the total content of one or more of Ti, Ca, V, Ni, Mn, and Cr is 4 to 55 ppm by mass, more preferably 10 to 20 ppm by mass, and Mg is 2 to 30. The amount of ppm is more preferably 5 to 10 ppm by mass, and the content of Zr and Nb is 8 to 100 ppm by mass, more preferably 20 to 40 ppm by mass.

此外,在後述的較佳實施方式中,氧含量超過2質量ppm且為30質量ppm以下是良好的,更較佳為5~15質量ppm,可以根據添加元素的添加量和S的含量,在具備合金的性質的範圍內,可包含超過2質量ppm且為400質量ppm以下。 Further, in the preferred embodiment to be described later, the oxygen content is more than 2 ppm by mass and is preferably 30 ppm by mass or less, more preferably 5 to 15 ppm by mass, depending on the amount of the added element and the content of S, The range of properties of the alloy may be more than 2 ppm by mass and 400 ppm by mass or less.

S的含量為2~12質量ppm,更較佳為3~8質量ppm。 The content of S is 2 to 12 ppm by mass, more preferably 3 to 8 ppm by mass.

本發明的銅銲線,例如,從汽車等中使用的功率模組的小型化、和/或供給至功率模組的電流的電流密度增大的觀點出發,將作為熱導率比鋁高的材料的銅作為主成分而構成。 The brazing wire of the present invention is, for example, higher in thermal conductivity than aluminum from the viewpoint of miniaturization of a power module used in an automobile or the like and/or an increase in current density of a current supplied to the power module. The copper of the material is composed as a main component.

例如,本發明的銅銲線使用作為滿足電導率為98%IACS(萬國標準軟銅(International Anneld Copper Standard),將電阻率1.7241×10-8Ωm設為100%的情況下的電導率)以上、較佳為100%IACS以上、更較佳為102%IACS以上的軟質型銅材的軟質低濃度銅合金材料來構成。 For example, the brazing wire of the present invention is used as a conductivity of 98% IACS (International Anneld Copper Standard, and a specific resistance of 1.7241×10 -8 Ωm is 100%). Preferably, it is a soft low-concentration copper alloy material of a soft copper material of 100% IACS or more, more preferably 102% IACS or more.

在獲得電導率為98%IACS以上的軟質銅材的情況下,以作為基礎原材料之包含不可避免的雜質的純銅作為基材中,使用包含3~12質量ppm的硫、超過2質量ppm且為30質量ppm以下的氧、和4~55質量ppm的鈦的軟質低濃度銅合金材料,由該軟質低濃度銅合金材料來製造盤條(線坯)。 In the case of obtaining a soft copper material having a conductivity of 98% IACS or more, pure copper containing unavoidable impurities as a base material is used as a base material, and 3 to 12 ppm by mass of sulfur is used, and more than 2 ppm by mass is used. A soft low-concentration copper alloy material of 30 ppm by mass or less and 4 to 55 ppm by mass of titanium is used to produce a wire rod (wire blank) from the soft low-concentration copper alloy material.

這裡,在獲得電導率為100%IACS以上的軟質銅材的情況下,以作為基礎原材料的包含不可避免的雜質的純銅為基材中,使用包含2~12質量ppm的硫、超過2質量ppm且為30質量ppm以下的氧、和4~37質量ppm的鈦的軟質低濃度銅合金材料。 When a soft copper material having an electric conductivity of 100% IACS or more is obtained, a pure copper containing an unavoidable impurity as a base material is used as a base material, and 2 to 12 ppm by mass of sulfur is used, and more than 2 ppm by mass is used. Further, it is a soft low-concentration copper alloy material of 30 mass ppm or less of oxygen and 4 to 37 mass ppm of titanium.

此外,在獲得電導率為102%IACS以上的軟質銅材的情況下,以作為基礎原材料的包含不可避免的雜質的純銅為基材,使用包含3~12質量ppm的硫、超過2質量ppm且為30質量ppm以下的氧、和4~25質量ppm的鈦的軟質低濃度銅合金材料。 In addition, when a soft copper material having a conductivity of 102% IACS or more is obtained, pure copper containing unavoidable impurities as a base material is used as a base material, and sulfur containing 3 to 12 ppm by mass and more than 2 ppm by mass are used. It is a soft low-concentration copper alloy material of 30 mass ppm or less of oxygen and 4 to 25 mass ppm of titanium.

通常,在純銅的工業製造中,在製造電解銅時硫進入銅中,因此難以使硫為3質量ppm以下。通用電解銅的硫濃度的上限為12質量ppm。 In general, in industrial production of pure copper, sulfur enters copper when electrolytic copper is produced, so that it is difficult to make sulfur 3 mass ppm or less. The upper limit of the sulfur concentration of the general electrolytic copper is 12 mass ppm.

由於本發明的銅銲線較佳含有超過2質量ppm且為30質量ppm以下的氧,因此在該實施方式中,將所謂低氧銅(LOC)作為對象。 Since the brazing wire of the present invention preferably contains more than 2 ppm by mass and 30 ppm by mass or less of oxygen, in this embodiment, so-called low-oxygen copper (LOC) is targeted.

在氧濃度低於2質量ppm的情況下,由於銅銲線的硬度不易降低,因此將氧濃度控制為超過2質量ppm的量。此外,在氧濃度高於30質量ppm的情況下,由於在熱軋製程中在銅銲線的表面上易於產生損傷,因此將氧濃度控制為30質量ppm以下。 When the oxygen concentration is less than 2 ppm by mass, since the hardness of the brazing wire is not easily lowered, the oxygen concentration is controlled to an amount exceeding 2 ppm by mass. Further, in the case where the oxygen concentration is higher than 30 ppm by mass, since the damage tends to occur on the surface of the brazing wire during the hot rolling pass, the oxygen concentration is controlled to 30 ppm by mass or less.

(3)關於銅銲線的晶體組織 (3) About the crystal structure of the brazing wire

本發明的銅銲線中,晶體組織從銅銲線的表面至少向銅銲線的內部直至線徑的20%的深度為止的平均晶粒尺寸為20μm以下。較佳地,表層的平均晶粒尺寸為5~15μm,其內部的平均晶粒尺寸為50~100μm。 In the brazing wire of the present invention, the average crystal grain size of the crystal structure from the surface of the brazing wire to at least the inside of the brazing wire to a depth of 20% of the wire diameter is 20 μm or less. Preferably, the surface layer has an average grain size of 5 to 15 μm and an internal average grain size of 50 to 100 μm.

這是因為,通過在表層上存在平均晶粒尺寸為20μm以下的微細晶粒,從而可以期待材料的抗拉強度、伸長的提高。作為其理由,認為是由於拉伸變形而導入到晶界附近的局部應變,晶體粒徑變小至微細程度,促進晶界應力集中的緩和,因而,晶界應力集中降低,抑制晶界斷裂。 This is because the presence of fine crystal grains having an average crystal grain size of 20 μm or less on the surface layer can be expected to improve the tensile strength and elongation of the material. The reason for this is considered to be a local strain introduced into the vicinity of the grain boundary due to the tensile deformation, and the crystal grain size is reduced to a fine degree to promote the relaxation of the grain boundary stress concentration. Therefore, the grain boundary stress concentration is lowered to suppress the grain boundary fracture.

此外,本發明中,只要具有晶體組織從銅銲線的表面至少向銅銲線的內部直至線徑的20%的深度為止的平均晶粒尺寸為20μm以下的本發明的效果,就不排除在超過線徑的20%的深度而更接近線材的中心部的區域存在微細晶體層的形態。 Further, in the present invention, the effect of the present invention having an average crystal grain size of 20 μm or less from the inside of the brazing wire to the depth of the wire bonding wire of at least 20% of the wire diameter is not excluded. The depth of 20% of the wire diameter and the region closer to the center of the wire have a fine crystal layer.

(4)關於分散的物質 (4) About dispersed substances

較佳銅銲線內分散的分散粒子的尺寸小,此外,較佳在銅銲線內分散粒子大量地分散。其理由是,分散粒子具有作為硫的析出位點的功能,作為析出位點,要求尺寸小、數目多。 It is preferable that the dispersed particles dispersed in the brazing wire have a small size, and further, it is preferred that the dispersed particles are largely dispersed in the brazing wire. The reason for this is that the dispersed particles have a function as a precipitation site of sulfur, and as a precipitation site, a small size and a large number are required.

具體而言,銅銲線所包含的硫、特別是作為添加元素的鈦包含有TiO、TiO2、TiS或具有Ti-O-S結合的化合物、或者有TiO、TiO2、TiS或具有Ti-O-S結合的化合物的凝聚物,其餘部分的Ti和S可包含固溶體。另外,關於其它添加元素也與鈦同樣。 Specifically, the sulfur contained in the brazing wire, particularly titanium as an additive element, contains TiO, TiO 2 , TiS or a compound having Ti-OS bonding, or has TiO, TiO 2 , TiS or has a Ti-OS bond. The agglomerates of the compounds, the remaining portions of Ti and S may comprise solid solutions. In addition, the other additive elements are also the same as titanium.

分散粒子的形成以及硫在分散粒子中的析出使銅母材的基體的純度提高,促進材料硬度的降低。 The formation of the dispersed particles and the precipitation of sulfur in the dispersed particles increase the purity of the matrix of the copper base material and promote the reduction of the hardness of the material.

(5)關於銅銲線的硬度、伸長率和抗拉強度 (5) About the hardness, elongation and tensile strength of brazing wire

對於本發明的銅銲線用的材料,要求硬度與伸長率、抗拉強度的平衡優異。作為其理由,是因為如果線或線前端所形成的球硬時,則對作為銲接焊墊的Al配線膜或其下的Si半導體晶片帶來破壞。此外,其原因是,如 果線本身的抗拉強度、伸長率小,則難以保持適當的線環,或銲接時易於發生斷線不良等。 The material for the brazing wire of the present invention is required to have excellent balance between hardness, elongation, and tensile strength. The reason for this is that if the ball formed at the tip of the wire or the wire is hard, the Al wiring film as a solder pad or the Si semiconductor wafer under it is broken. In addition, the reason is, such as When the tensile strength and elongation of the fruit thread itself are small, it is difficult to maintain an appropriate loop, or it is prone to breakage during welding.

通常,由於硬度(柔軟性)與伸長(的高低)、抗拉強度(的高低)形成消長的關係,因此較佳平衡地兼備這些特性。 In general, since the hardness (softness) and the elongation (height) and the tensile strength (the height) are in a long-term relationship, it is preferable to have these characteristics in balance.

此外,本發明的銅銲線具有與實施退火處理的無氧銅線相同或其以下的硬度,並且,伸長率的值的平均值具有比無氧銅線高1%以上的伸長率的值。這裡所謂硬度,是指材料的維氏硬度。 Further, the brazing wire of the present invention has the same hardness as or less than the oxygen-free copper wire subjected to the annealing treatment, and the average value of the elongation values has a value higher than the oxygen-free copper wire by 1% or more. The term "hardness" as used herein refers to the Vickers hardness of the material.

此外,本發明的銅銲線具有與實施退火處理的無氧銅線相同或其以上的抗拉強度,並且,硬度的值具有比無氧銅線低2Hv以上的值。 Further, the brazing wire of the present invention has the same or higher tensile strength as the oxygen-free copper wire subjected to the annealing treatment, and the value of the hardness has a value lower than the oxygen-free copper wire by 2 Hv or more.

(銅銲線的製造方法) (Manufacturing method of brazing wire)

本發明的銅銲線的製造方法如下所述。作為例子,對添加元素選擇Ti的情況進行說明。 The method for producing the brazing wire of the present invention is as follows. As an example, a case where Ti is added to an additive element will be described.

首先,準備作為銅銲線原料之包含Ti的軟質低濃度銅合金材料(原料準備製程)。接著,將該軟質低濃度銅合金材料在1100℃以上1320℃以下的熔銅溫度製成熔液(熔液製造製程)。接著,由熔液製作盤條(盤條製作製程)。接著,在880℃以下550℃以上的溫度對盤條實施熱軋(熱軋製程)。然後,對經過熱軋製程的盤條實施拉線加工和熱處理(拉線加工、熱處理製程)。作為熱處理方法,可以應用使用管狀爐的移動退火、利用了電阻發熱的通電退火等。此外,還能夠為間歇式的退火。通過這些製程來製造本發明的銅銲線。 First, a soft low-concentration copper alloy material containing Ti as a raw material of a brazing wire is prepared (raw material preparation process). Next, the soft low-concentration copper alloy material is melted at a molten copper temperature of 1100 ° C or more and 1320 ° C or less (melt manufacturing process). Next, a wire rod (a wire rod manufacturing process) is produced from the melt. Next, hot rolling (hot rolling) is performed on the wire rod at a temperature of 880 ° C or lower and 550 ° C or higher. Then, the wire rod subjected to the hot rolling process is subjected to wire drawing processing and heat treatment (wire drawing processing, heat treatment process). As the heat treatment method, mobile annealing using a tubular furnace, electric conduction annealing using resistance heating, or the like can be applied. In addition, it is also possible to perform batch annealing. The brazing wire of the present invention is produced by these processes.

此外,銅銲線的製造中,較佳包含2質量ppm以上12質量ppm以下的硫、超過2質量ppm且為30質量ppm以下的氧、和4質量ppm以上55質量ppm以下的鈦的軟質低濃度銅合金材料。 Further, in the production of the brazing wire, it is preferable to contain 2 mass ppm or more and 12 mass ppm or less of sulfur, more than 2 mass ppm and 30 mass ppm or less of oxygen, and 4 mass ppm or more and 55 mass ppm or less of titanium. Concentration copper alloy material.

因此,本發明人為了實現銅銲線硬度的降低,研究了以下兩個對策。進而,通過在銅盤條的製造中合併使用以下兩個對策,從而獲得了本發明的銅銲線。 Therefore, the inventors studied the following two countermeasures in order to reduce the hardness of the brazing wire. Further, by using the following two measures in combination in the production of the copper wire rod, the brazing wire of the present invention is obtained.

首先,第1對策是,在氧濃度超過2質量ppm的量的Cu中添加了鈦(Ti)的狀態下,製作軟質低濃度銅合金材料的熔液。認為在該熔液中,形成了TiS、鈦的氧化物(例如,TiO2)和Ti-O-S粒子。 First, the first countermeasure is to prepare a molten metal of a soft low-concentration copper alloy material in a state in which titanium (Ti) is added to Cu having an oxygen concentration of more than 2 ppm by mass. It is considered that TiS, titanium oxide (for example, TiO 2 ) and Ti-OS particles are formed in the melt.

接著,第2對策是,以通過在軟質低濃度銅合金材料中導入位錯而使 硫(S)的析出容易為目的,將熱軋製程中的溫度設定為比通常的銅的製造條件下的溫度(即,950℃~600℃)低的溫度(880℃~550℃)。通過這樣的溫度設定,可以使S在位錯上析出或將鈦的氧化物(例如,TiO2)作為晶核使S析出。 In the second measure, the temperature in the hot rolling pass is set to be higher than the usual copper production conditions for the purpose of facilitating the precipitation of sulfur (S) by introducing dislocations into the soft low-concentration copper alloy material. Temperature (ie, 950 ° C ~ 600 ° C) low temperature (880 ° C ~ 550 ° C). By such a temperature setting, S can be precipitated on dislocations or S is precipitated by using an oxide of titanium (for example, TiO 2 ) as a crystal nucleus.

通過以上第1對策和第2對策而使軟質低濃度銅合金材料所包含的硫結晶並且析出,因此可以在冷軋拉線加工後獲得具有較佳軟質特性和較佳電導率的銅盤條。 Since the sulfur contained in the soft low-concentration copper alloy material is crystallized and precipitated by the first countermeasure and the second countermeasure described above, it is possible to obtain a copper wire rod having better soft characteristics and better electrical conductivity after cold-rolling drawing.

本發明的銅銲線使用SCR連續鑄造軋製設備,表面的損傷少,製造範圍寬,能夠穩定生產。通過SCR連續鑄造軋製,以鑄塊棒的加工度為90%(30mm)~99.8%(5mm)來製作盤條。作為一例,採用以加工度99.3%製造ψ 8mm的盤條的條件。 The brazing wire of the present invention uses SCR continuous casting and rolling equipment, has less surface damage, has a wide manufacturing range, and can be stably produced. The wire rod is produced by SCR continuous casting and rolling, and the processing degree of the ingot bar is 90% (30 mm) to 99.8% (5 mm). As an example, a condition in which a wire rod of 8 mm is produced at a working degree of 99.3% is used.

熔融爐內的熔銅溫度較佳控制為1100℃以上1320℃以下。如果熔銅的溫度高,則傾向於氣孔增多、發生損傷並且粒子尺寸增大,因此控制為1320℃以下。此外,控制為1100℃以上的理由是,在該溫度以下時熔銅易於凝固,有時製造不穩定,但較佳熔銅溫度為盡可能低的溫度。 The temperature of the molten copper in the melting furnace is preferably controlled to be 1100 ° C or more and 1320 ° C or less. If the temperature of the molten copper is high, the pores tend to increase, damage occurs, and the particle size increases, so the control is 1320 ° C or lower. Further, the reason why the control is 1100 ° C or more is that the molten copper tends to solidify when the temperature is lower than the temperature, and the production may be unstable, but the molten copper temperature is preferably as low as possible.

熱軋加工的溫度較佳為將最初的軋製輥的溫度控制為880℃以下,並且將最終軋製輥的溫度控制為550℃以上。 The temperature of the hot rolling process is preferably such that the temperature of the first rolling roll is controlled to 880 ° C or lower, and the temperature of the final rolling roll is controlled to 550 ° C or higher.

這些鑄造條件與通常的純銅的製造條件不同,其目的是使作為熔銅中的硫的結晶和熱軋中的硫的析出的驅動力的固溶限(固溶液溶解限solid solubility limit,簡稱為固溶限)更小。 These casting conditions are different from the usual production conditions of pure copper, and the purpose thereof is to achieve a solid solution limit (solid solution limit, solid solution limit) as a driving force for crystallization of sulfur in molten copper and precipitation of sulfur in hot rolling. The solubility limit is smaller.

此外,通常的熱軋加工中的溫度在最初的軋製輥中950℃以下,在最終軋製輥中為600℃以上,但為了使固溶限更小,本實施方式中,較佳在最初的軋製輥中設定為880℃以下,在最終軋製輥中設定為550℃以上。 Further, the temperature in the usual hot rolling is 950 ° C or lower in the first rolling roll and 600 ° C or higher in the final rolling roll. However, in order to make the solid solution limit smaller, in the present embodiment, it is preferable to initially The rolling roll was set to 880 ° C or lower, and was set to 550 ° C or higher in the final rolling roll.

另外,將最終軋製輥中的溫度設定為550℃以上的理由是,在低於550℃的溫度下,所得的盤條的損傷增多,不能將製造的銅銲線作為製品進行操作。熱軋加工時的溫度較佳在最初的軋製輥中控制為880℃以下的溫度,在最終軋製輥中控制為550℃以上的溫度,並且為盡可能低的溫度。通過這樣的溫度設定,可以使銅銲線的基體的硬度與高純度銅(5N以上)的硬度接近。作為硫捕集的效果,除了軟化溫度降低以外,可舉出將基體高純度化,硬度降低。 Further, the reason why the temperature in the final rolling roll is set to 550 ° C or higher is that the damage of the obtained wire rod is increased at a temperature lower than 550 ° C, and the produced brazing wire cannot be handled as a product. The temperature at the time of hot rolling is preferably controlled to a temperature of 880 ° C or lower in the first rolling roll, and is controlled to a temperature of 550 ° C or more in the final rolling roll, and is as low as possible. By such temperature setting, the hardness of the base of the brazing wire can be made close to the hardness of high-purity copper (5N or more). As an effect of sulfur trapping, in addition to a decrease in softening temperature, the matrix is highly purified and the hardness is lowered.

較佳在豎爐(豎窰shaft kiln)中熔解基礎材的純銅後,以還原狀態在槽中流動。即,較佳在還原氣體(例如,CO氣體)環境下,在控制低濃度合金的硫濃度、鈦濃度和氧濃度的同時進行鑄造,並且通過對材料實施軋製加工,從而穩定地製造盤條。另外,銅氧化物混入和/或粒子尺寸大於規定尺寸會使製造的銅銲線的質量降低。 It is preferred to melt the pure copper of the base material in a shaft furnace (shaft kiln) and then flow in the tank in a reduced state. That is, it is preferable to perform casting while controlling the sulfur concentration, the titanium concentration, and the oxygen concentration of the low-concentration alloy in a reducing gas (for example, CO gas) environment, and to stably manufacture the wire rod by subjecting the material to rolling processing. . In addition, the incorporation of copper oxide and/or particle size greater than a specified size results in a decrease in the quality of the fabricated braze wire.

如上所述,可以獲得伸長特性、斷裂強度、維氏硬度之平衡好的軟質低濃度銅合金材料作為本發明的銅銲線的原料。 As described above, a soft low-concentration copper alloy material having a good balance of elongation characteristics, breaking strength, and Vickers hardness can be obtained as a raw material of the brazing wire of the present invention.

另外,也可以在軟質低濃度銅合金材料的表面上形成鍍層。鍍層可以使用將例如鈀、鋅、鎳、金、鉑、銀等貴金屬作為主成分的材料,或無Pb鍍層。此外,軟質低濃度銅合金材料的形狀沒有特別的限定,可以製成截面圓形形狀、棒狀或扁平導體狀。 Alternatively, a plating layer may be formed on the surface of the soft low-concentration copper alloy material. As the plating layer, a material containing a noble metal such as palladium, zinc, nickel, gold, platinum, silver or the like as a main component or a Pb-free plating layer can be used. Further, the shape of the soft low-concentration copper alloy material is not particularly limited, and it may be formed into a circular cross section, a rod shape, or a flat conductor shape.

此外,本實施方式中,通過SCR連續鑄造軋製法製作盤條並且利用熱軋製作軟質材,但也可以採用雙輥式連續鑄造軋製法或Properzi式連續鑄造軋製法。 Further, in the present embodiment, the wire rod is produced by the SCR continuous casting and rolling method, and the soft material is produced by hot rolling. However, a two-roll continuous casting rolling method or a Properzi-type continuous casting rolling method may be employed.

根據本發明,由於包含Ti等特定的添加元素,其餘部分包含銅,晶體組織從表面直至線徑的20%的深度為止的平均晶粒尺寸為20μm以下,因此可以提供具有高抗拉強度和伸長率,而且可以兼有柔軟性(硬度小)的銅銲線。 According to the present invention, since a specific additive element such as Ti is contained, the remainder contains copper, and the average grain size of the crystal structure from the surface up to a depth of 20% of the wire diameter is 20 μm or less, so that high tensile strength and elongation can be provided. It is a copper wire with a softness (small hardness).

以下,說明本發明的實施方式,但下述的實施方式不限定權利要求所有關的發明。此外,應當注意,本實施方式中所說明的特徵的全部組合在用於解決本發明的課題的方法中不一定是必須的。 Hereinafter, embodiments of the present invention will be described, but the following embodiments do not limit the invention according to the claims. Further, it should be noted that all combinations of the features described in the present embodiment are not necessarily required in the method for solving the problems of the present invention.

[實施例1] [Example 1] 〔軟質低濃度銅合金材料(2.6mm直徑)的製造〕 [Manufacture of soft low-concentration copper alloy material (2.6mm diameter)]

作為實驗材,製作具有氧濃度7質量ppm~8質量ppm、硫濃度5質量ppm、鈦濃度13質量ppm的ψ 8mm的銅線(盤條,加工度99.3%)。ψ 8mm的銅線是通過SCR連續鑄造軋製法(South Continuous Rod System)實施熱軋加工而製作的。關於Ti,使在豎爐中被熔解的銅熔液在還原氣體環境下在 槽中流動,將槽中流動的銅熔液導入至相同還原氣體環境的鑄造釜中,在該鑄造釜中添加Ti後,使其通過噴嘴,利用鑄造輪與環形帶之間所形成的鑄模而製成鑄塊棒。將該鑄塊棒進行熱軋加工而製成ψ 8mm的銅線。接著,對各實驗材實施冷拉線加工。由此,製作ψ 2.6mm尺寸的銅線。 As a test material, a copper wire (wire bar, workability: 99.3%) having a concentration of 7 mass ppm to 8 mass ppm, a sulfur concentration of 5 mass ppm, and a titanium concentration of 13 mass ppm was prepared. ψ 8mm copper wire is produced by hot rolling processing by SCR continuous casting system (South Continuous Rod System). Regarding Ti, the molten copper melted in the shaft furnace is in a reducing gas atmosphere. Flowing in the tank, introducing the copper melt flowing in the tank into the casting kettle of the same reducing gas environment, adding Ti in the casting pot, passing it through the nozzle, and using the mold formed between the casting wheel and the endless belt Made into ingot bars. The ingot bar was subjected to hot rolling to obtain a copper wire of 8 mm. Next, cold drawing processing was performed on each of the experimental materials. Thus, a copper wire having a size of 2.6 mm was produced.

使用該ψ 2.6mm尺寸的銅線,驗證銅銲線中使用的原材料的特性。 Use this 2.6 mm copper wire to verify the characteristics of the raw materials used in the brazing wire.

〔關於軟質低濃度銅合金材料的軟質特性〕 [About the soft properties of soft low-concentration copper alloy materials]

表1為將使用無氧銅線的比較材1和使用具有氧濃度7質量ppm~8質量ppm、硫濃度5質量ppm、鈦濃度13質量ppm的軟質低濃度銅合金線的實施材1作為試樣,驗證在不同退火溫度實施1小時退火的材料的維氏硬度(Hv)的表。根據表1,退火溫度為400℃時,比較材1與實施材1的維氏硬度(Hv)為同等水準,即使退火溫度為600℃也顯示同等的維氏硬度(Hv)。因此可知,本發明的軟質低濃度銅合金線具有充分的軟質特性,並且即使與無氧銅線相比,特別是在退火溫度超過400℃的區域也具備優異的軟質特性。 Table 1 shows a comparative material 1 using an oxygen-free copper wire and a material 1 using a soft low-concentration copper alloy wire having an oxygen concentration of 7 mass ppm to 8 mass ppm, a sulfur concentration of 5 mass ppm, and a titanium concentration of 13 mass ppm. A table of Vickers hardness (Hv) of materials annealed at different annealing temperatures for 1 hour was verified. According to Table 1, when the annealing temperature was 400 ° C, the Vickers hardness (Hv) of the comparative material 1 and the material 1 was the same level, and the same Vickers hardness (Hv) was exhibited even when the annealing temperature was 600 °C. Therefore, it is understood that the soft low-concentration copper alloy wire of the present invention has sufficient soft characteristics, and has excellent soft characteristics particularly in the region where the annealing temperature exceeds 400 ° C, compared to the oxygen-free copper wire.

〔關於軟質低濃度銅合金材料的晶體結構〕 [About the crystal structure of soft low-concentration copper alloy materials]

測定2.6mm直徑的實施材1、比較材1的表層中的平均晶粒尺寸。這裡,表層中的平均晶粒尺寸的測定方法中,如第1圖所示,測定從2.6mm直徑的徑向截面的表面沿深度方向以10μm間隔直至50μm的深度為止的位置的長度10mm的線上的範圍的晶粒尺寸,將所得的各個實測值進行平均而得的值作為表層中的平均晶粒尺寸。 The average grain size in the surface layer of the 2.6 mm diameter of the material 1 and the comparative material 1 was measured. Here, in the method of measuring the average crystal grain size in the surface layer, as shown in Fig. 1, a line having a length of 10 mm from a position of a radial cross section of 2.6 mm in diameter in a depth direction of 10 μm to a depth of 50 μm is measured. The grain size of the range is obtained by averaging the obtained measured values as the average grain size in the surface layer.

測定的結果是,比較材1的表層中的平均晶粒尺寸為100μm,與此相對,實施材1的表層中的平均晶粒尺寸為20μm。因此,在本發明中,將從表面向內部直至20%的深度為止的表層中的平均晶粒尺寸設為20μm以下。 As a result of the measurement, the average grain size in the surface layer of the comparative material 1 was 100 μm, whereas the average grain size in the surface layer of the material 1 was 20 μm. Therefore, in the present invention, the average crystal grain size in the surface layer from the surface to the inside up to 20% is set to 20 μm or less.

比較材1的晶體結構中,從表面部至中央部整體上大小相等的晶粒均勻地排列,與此相對,實施材1的晶體結構中,在試樣的截面方向的表面附近薄狀地形成的層中的晶粒尺寸與內部的晶粒尺寸相比極小。 In the crystal structure of the comparative material 1, crystal grains having the same size from the surface portion to the entire central portion are uniformly arranged, whereas the crystal structure of the material 1 is formed thinly in the vicinity of the surface in the cross-sectional direction of the sample. The grain size in the layer is extremely small compared to the internal grain size.

〔關於軟質低濃度銅合金材料的伸長特性與晶體結構的關係〕 [Relationship between elongation characteristics and crystal structure of soft low-concentration copper alloy materials]

第2圖為將使用2.6mm直徑的無氧銅線的比較材1和使用在2.6mm直徑的低氧銅(氧濃度7質量ppm~8質量ppm、硫濃度5質量ppm)中添加了13質量ppm的Ti的軟質低濃度銅合金線的實施材1作為試樣,驗證在不同退火溫度實施1小時退火的材料的伸長率(%)的值的變化的圖。第2圖所示的圓形記號表示實施材1,矩形記號表示比較材1。 Fig. 2 shows the comparison of the material 1 using a 2.6 mm diameter oxygen-free copper wire and the use of a low-oxygen copper (oxygen concentration of 7 mass ppm to 8 mass ppm, sulfur concentration of 5 mass ppm) of 2.6 mm diameter. The material 1 of the soft low-concentration copper alloy wire of ppm Ti was used as a sample to verify the change of the value of the elongation (%) of the material which was annealed at different annealing temperatures for 1 hour. The circular symbol shown in Fig. 2 indicates the material 1 and the rectangular symbol indicates the comparative material 1.

如第2圖所示,可知與比較材1相比,實施材1在退火溫度超過100℃且從130℃附近至900℃的寬範圍內顯示優異的伸長特性。 As shown in Fig. 2, it was found that the material 1 exhibited excellent elongation characteristics in a wide range from the vicinity of 130 ° C to 900 ° C at an annealing temperature of more than 100 ° C as compared with the comparative material 1 .

第3圖為顯示在退火溫度500℃時實施材1的銅線的徑向截面照片的圖。如第3圖所示,在銅線截面整體中形成了微細的晶體組織,認為該微細的晶體組織促進了伸長特性。與此相對,在退火溫度500℃時的比較材1的截面組織進行兩次再結晶,與第3圖的晶體組織相比,截面組織中的晶粒粗大化,因此認為伸長特性降低。 Fig. 3 is a view showing a photograph of a radial cross section of the copper wire of the material 1 at an annealing temperature of 500 °C. As shown in Fig. 3, a fine crystal structure is formed in the entire cross section of the copper wire, and it is considered that the fine crystal structure promotes elongation characteristics. On the other hand, the cross-sectional structure of the comparative material 1 at the annealing temperature of 500 ° C was twice recrystallized, and the crystal grains in the cross-sectional structure were coarsened compared with the crystal structure of FIG. 3 , and thus the elongation characteristics were considered to be lowered.

第4圖為顯示在退火溫度700℃時的實施材1的銅線的徑向截面照片的圖。可知銅線截面中的表層的晶粒尺寸與內部的晶粒尺寸相比極小。雖然內部的晶體組織進行兩次再結晶,但外層中的微細晶粒的層殘存。實施材1中,內部的晶體組織大地生長,但表層中殘存微細晶體的層,因此認為維持了伸長特性。 Fig. 4 is a view showing a photograph of a radial cross section of the copper wire of the material 1 at an annealing temperature of 700 °C. It can be seen that the grain size of the surface layer in the cross section of the copper wire is extremely small compared to the grain size inside. Although the internal crystal structure is recrystallized twice, the layer of fine crystal grains in the outer layer remains. In the material 1, the internal crystal structure grows largely, but the layer of the fine crystal remains in the surface layer, and therefore it is considered that the elongation property is maintained.

這樣,通過調節退火溫度和退火時間,可以調節線材截面中的微細晶體層所占的比例,可以根據微細晶體層所占的比例而調整線材的伸長特性。 Thus, by adjusting the annealing temperature and the annealing time, the proportion of the fine crystal layer in the cross section of the wire can be adjusted, and the elongation characteristics of the wire can be adjusted according to the proportion of the fine crystal layer.

第5圖為將比較材1的徑向截面組織在截面照片中顯示的圖。如第5圖所示,從表面至中央整體上大致相等大小的晶粒均勻地排列,在截面組織整體中進行2次再結晶,因此認為與實施材1相比比較材1在600℃以上的高溫區域中的伸長特性降低。 Fig. 5 is a view showing the radial cross-sectional structure of the comparative material 1 in a cross-sectional photograph. As shown in Fig. 5, the crystal grains of substantially equal size from the surface to the entire center are uniformly arranged, and recrystallization is performed twice in the entire cross-sectional structure. Therefore, it is considered that the comparative material 1 is 600 ° C or more as compared with the material 1 . The elongation characteristics in the high temperature region are lowered.

根據以上的結果,與比較材1相比,使用實施材1的製品中,柔軟性、電導率提高,並且可以提高伸長特性。 According to the above results, in the product using the material 1 as compared with the comparative material 1, the flexibility and electrical conductivity are improved, and the elongation property can be improved.

以往的導體中,為了使晶體組織再結晶成實施材1那樣的大小,需要高溫的退火處理。然而,如果退火溫度過高,則S會再固溶。此外,以往的導體中,如果進行再結晶,則有變得柔軟、伸長特性降低的問題。然而,實施材1具有下述特徵:由於在退火時可以不形成雙晶地再結晶,因此內 部的晶粒變大,變得柔軟,但另一方面,由於表層殘存微細晶體,因此抗拉強度和伸長特性不降低。通過在銅銲線中使用這樣的原材料,可以實現柔軟、具有高導電性、伸長特性優異、具備後述優異之抗拉強度的銅銲線。 In the conventional conductor, in order to recrystallize the crystal structure to the size of the material 1, high-temperature annealing treatment is required. However, if the annealing temperature is too high, S will re-dissolve. Further, in the conventional conductor, when recrystallization is performed, there is a problem that it becomes soft and the elongation property is lowered. However, the material 1 has the feature that since it can be recrystallized without forming twin crystals during annealing, The crystal grains of the portion become large and become soft, but on the other hand, since the fine crystal remains in the surface layer, the tensile strength and the elongation property are not lowered. By using such a material in the brazing wire, it is possible to realize a brazing wire which is soft, has high conductivity, is excellent in elongation characteristics, and has excellent tensile strength as described later.

[實施例2] [Embodiment 2] 〔銅銲線〕 [brass wire]

到製作ψ 2.6mm尺寸的銅線時為止,與上述的軟質低濃度銅合金材料的實施例1是同樣的。對上述銅線實施拉線加工直至ψ 0.9mm,利用通電退火爐暫退火後拉線直至ψ 0.05mm。接著,利用管狀爐實施400℃~600℃×0.8~4.8秒的移動退火,製成實施材2的材料。作為比較,ψ 0.05mm的4N銅(99.99%以上,OFC(無氧銅))也在同樣的加工熱處理條件下製作,製成比較材2的材料。測定這些材料的機械特性(抗拉強度、伸長率、硬度)、晶粒尺寸。 The same as in the first embodiment of the soft low-concentration copper alloy material described above, when the copper wire of 2.6 mm size was produced. The copper wire was subjected to wire drawing processing until it was 0.9 mm, and was temporarily annealed by a current-annealing furnace and then pulled up to 0.05 mm. Next, the material of the material 2 was produced by performing a moving annealing of 400 ° C to 600 ° C × 0.8 to 4.8 seconds in a tubular furnace. For comparison, N 0.05 mm of 4N copper (99.99% or more, OFC (oxygen-free copper)) was also produced under the same processing heat treatment conditions to obtain a material of Comparative Material 2. The mechanical properties (tensile strength, elongation, hardness) and grain size of these materials were measured.

表層中的平均晶粒尺寸測定從0.05mm直徑的徑向截面的表面沿深度方向直至10μm的深度為止的位置的長度0.025mm的範圍的晶粒尺寸。 The average grain size in the surface layer was measured from the grain size in the range of 0.025 mm from the surface of the radial cross section of the 0.05 mm diameter in the depth direction up to a depth of 10 μm.

(銅銲線的第7圖為對於使用無氧銅線的比較材2的盤條、和由使低氧銅含有13質量ppm的Ti的軟質低濃度銅合金線製作而成的實施材2的盤條,從ψ 0.9mm(退火材)進行拉線加工直至ψ 0.05mm,測定通過管狀爐進行移動退火(溫度300℃~600℃,時間0.8~4.8秒)後的截面硬度(Hv)和機械特性(抗拉強度、伸長率)而得到的結果。 (The seventh drawing of the brazing wire is the wire rod of the comparative material 2 using the oxygen-free copper wire, and the material 2 made of the soft low-concentration copper alloy wire containing the low-oxygen copper containing 13 mass ppm of Ti. The wire rod was subjected to wire drawing processing from ψ 0.9 mm (annealed material) to ψ 0.05 mm, and the section hardness (Hv) and mechanical after moving annealing (temperature 300 ° C to 600 ° C, time 0.8 to 4.8 seconds) by a tubular furnace were measured. The result of the properties (tensile strength, elongation).

截面硬度為通過研磨埋入樹脂中的ψ 0.05mm線的橫截面,且以測定線中央部的維氏硬度來評價。測定數為5處,取其平均值。 The cross-sectional hardness was a cross section of a ψ 0.05 mm line embedded in the resin by polishing, and was evaluated by the Vickers hardness at the center of the measurement line. The number of measurements was 5 and the average value was taken.

抗拉強度和伸長率的測定通過將ψ 0.05mm線在標距100mm、拉伸速度20mm/min的條件下進行拉伸試驗來評價。材料斷裂時的最大拉伸應力為抗拉強度,將材料斷裂時的最大變形量(應變)設為伸長。 Tensile strength and elongation were measured by performing a tensile test under the conditions of a gauge length of 100 mm and a tensile speed of 20 mm/min. The maximum tensile stress at the time of material fracture is the tensile strength, and the maximum deformation amount (strain) at the time of material fracture is set to elongation.

如第6圖所示,可知在以大致相同伸長率進行比較的情況下,實施材2的硬度與比較材2相比小10Hv左右。與OFC材料相比,可以不降低伸長特性,減小硬度,從而實施材2的銅銲線與使用無氧銅的銲接線相比,可以降低銲接時的焊墊破壞。 As shown in Fig. 6, it is understood that when the comparison is performed at substantially the same elongation, the hardness of the material 2 is about 10 Hv smaller than that of the comparative material 2. Compared with the OFC material, the elongation property can be reduced and the hardness can be reduced, so that the brazing wire of the material 2 can reduce the pad damage during welding as compared with the welding wire using the oxygen-free copper.

如第7圖所示,可知在以大致相同伸長率進行比較的情況下,實施材2的硬度與比較材2相比小10Hv左右。與無氧銅相比,可以不降低伸長的特 性,減小硬度,從而例如實施例2的銅導體與使用無氧銅的銲接線相比,可以降低銲接時的焊墊破壞。 As shown in Fig. 7, it is understood that when the comparison is performed at substantially the same elongation, the hardness of the material 2 is about 10 Hv smaller than that of the comparative material 2. Compared with oxygen-free copper, it can not reduce the elongation The hardness is reduced, so that, for example, the copper conductor of the second embodiment can reduce the damage of the pad during soldering as compared with the solder wire using the oxygen-free copper.

表2表示在第6圖所示的評價結果中實施材2與比較材2中硬度選擇大致同等條件的資料而進行比較的結果。表2的上格的實施例表示將實施材2的盤條從ψ 0.9mm(退火材)進行拉線加工直至ψ 0.05mm,在管狀爐中進行400℃×1.2秒移動退火時的機械特性和硬度。同樣地,表2的比較例表示將比較材2的盤條從ψ 0.9mm(退火材)進行拉線加工直至ψ 0.05mm,在管狀爐中進行600℃×2.4秒移動退火時的機械特性和硬度。 Table 2 shows the results of comparison between the material 2 and the comparative material 2 in the evaluation results shown in FIG. The example of the upper case of Table 2 shows the mechanical properties of the wire rod of the material 2 from ψ 0.9 mm (annealed material) to ψ 0.05 mm, and subjected to 400 ° C × 1.2 second moving annealing in a tubular furnace. hardness. Similarly, the comparative example of Table 2 shows that the wire rod of the comparative material 2 is subjected to wire drawing processing from ψ 0.9 mm (annealed material) up to ψ 0.05 mm, and mechanical properties at 600 ° C × 2.4 second moving annealing in a tubular furnace and hardness.

如表2所示,即使為相同硬度的材料,實施材2的伸長與比較材2相比也高7%以上,因此可以大幅度促進線銲接時的連接可靠性、操作特性的提高。此外,實施材2與雖為相同硬度但使用無氧銅的比較材2的銲接線相比,抗拉強度高,因此可以大幅度促進連接部(球頸部)的強度可靠性。 As shown in Table 2, even if the material of the same hardness is used, the elongation of the material 2 is 7% or more higher than that of the comparative material 2, so that the connection reliability and the handling characteristics at the time of wire bonding can be greatly improved. Further, since the material 2 has a higher tensile strength than the welding wire of the comparative material 2 which uses the same hardness but uses oxygen-free copper, the strength reliability of the joint portion (ball neck portion) can be greatly promoted.

這裡所謂線銲接部的連接可靠性是指線上銲接後樹脂模製後,對於由銅線與樹脂材的熱膨脹差而產生的應力的抗性。此外,所謂操作性,是指對於從捲線筒向銲接部供給線時的應力的抗性、以及捲曲行為的發生難易度。 Here, the connection reliability of the wire bonding portion refers to the resistance to stress generated by the difference in thermal expansion between the copper wire and the resin material after the resin is molded after the wire is welded. In addition, the operability refers to the resistance to stress when the wire is supplied from the spool to the welded portion, and the ease of occurrence of the curling behavior.

接下來,根據第7圖,可知以大致相同抗拉強度進行比較的情況下,實施材2的硬度與比較材2相比小10Hv左右。可以不降低抗拉強度,減小硬度,因此可以降低實施例2的銲接線在銲接時的焊墊破壞。 Next, according to Fig. 7, it can be seen that when the comparison is performed at substantially the same tensile strength, the hardness of the material 2 is about 10 Hv smaller than that of the comparative material 2. It is possible to reduce the tensile strength and reduce the hardness, so that the welding pad damage of the welding wire of Example 2 at the time of welding can be reduced.

表3顯示實施材2與比較材2中抗拉強度選擇大致同等條件的資料而進行比較的結果。表3的上格的實施例表示將實施材2的盤條從ψ 0.9mm(退火材)進行拉線加工直至ψ 0.05mm,在管狀爐中進行500℃×4.8秒移動退火時的機械特性和硬度。同樣地,表3的比較例表示將比較材2的盤條從ψ 0.9mm(退火材)進行拉線加工直至ψ 0.05mm,在管狀爐中進行600℃×2.4秒移動退火時的機械特性和硬度。 Table 3 shows the results of comparison between the material 2 and the comparative material 2 in which the tensile strength was selected to be substantially equal. The example of the upper case of Table 3 shows the mechanical properties of the wire rod of the material 2 from ψ 0.9 mm (annealed material) to ψ 0.05 mm, and 500 ° C × 4.8 second moving annealing in a tubular furnace. hardness. Similarly, the comparative example of Table 3 shows the mechanical properties of the wire rod of the comparative material 2 from ψ 0.9 mm (annealed material) to ψ 0.05 mm, and subjected to a moving annealing at 600 ° C × 2.4 seconds in a tubular furnace. hardness.

如表3所示,即使為相同抗拉強度的材料,實施例2的伸長率與比較材2相比也高5%,因此可以大幅度促進線銲接時的連接可靠性、操作特性的提高。此外,雖為相同抗拉強度的材料,但實施材2的硬度與比較例2相比也非常小,因此可以減小線銲接時的焊墊破壞。 As shown in Table 3, even in the case of the material having the same tensile strength, the elongation of Example 2 was 5% higher than that of Comparative Material 2, so that the connection reliability and the handling characteristics at the time of wire bonding can be greatly improved. Further, although the material having the same tensile strength was used, the hardness of the material 2 was extremely small as compared with Comparative Example 2, so that the damage of the pad during wire bonding can be reduced.

這裡所謂線銲接部的連接可靠性是指線上銲接後樹脂模製後,對於由銅線與樹脂材的熱膨脹差而產生的應力的抗性(抗性)。此外,所謂操作性,是指對於從捲線筒向銲接部供給線時的應力的抗性、以及捲曲行為的發生難易度。 Here, the connection reliability of the wire bonding portion refers to resistance (resistance) to stress generated by a difference in thermal expansion between the copper wire and the resin material after the resin is molded after the wire is welded. In addition, the operability refers to the resistance to stress when the wire is supplied from the spool to the welded portion, and the ease of occurrence of the curling behavior.

硬度、伸長率、抗拉強度的平衡根據製品所要求的規格的不同而稍微不同,作為一例,根據本發明,在重視抗拉強度的情況下,能夠供給抗拉強度270MPa以上、伸長率7%以上、硬度65Hv以下的線。 The balance of the hardness, the elongation, and the tensile strength is slightly different depending on the specifications required for the product. As an example, according to the present invention, when the tensile strength is emphasized, the tensile strength of 270 MPa or more and the elongation of 7% can be supplied. Above the line with a hardness of 65Hv or less.

此外,在重視硬度小的情況下,能夠供給抗拉強度210MPa以上且小於270MPa、伸長率15%以上、並且硬度63Hv以下的導體。 Further, when the importance is small, a conductor having a tensile strength of 210 MPa or more and less than 270 MPa, an elongation of 15% or more, and a hardness of 63 Hv or less can be supplied.

(關於0.05mm直徑的銅銲線的晶體結構) (About the crystal structure of a 0.05 mm diameter copper wire)

第8圖為將比較材2的銅銲線的徑向截面組織在截面照片中顯示的圖,第9圖為將實施材2的銅銲線的徑向截面組織在截面照片中顯示的圖。如第8圖所示,可知比較材2的晶體結構中,從表面至中央整體上大小相等的晶粒均勻地排列。另一方面,實施材2的晶體結構中,整體上晶粒的大小稀疏,在試樣的截面方向的表面附近薄狀地形成的層中的晶粒尺寸與內部的晶粒尺寸相比為極小。 Fig. 8 is a view showing a radial cross-sectional structure of a brazing wire of the comparative material 2 in a cross-sectional photograph, and Fig. 9 is a view showing a radial cross-sectional structure of a brazing wire of the material 2 in a cross-sectional photograph. As shown in Fig. 8, it is understood that in the crystal structure of the comparative material 2, crystal grains having the same size from the surface to the entire center are uniformly arranged. On the other hand, in the crystal structure of the material 2, the size of the crystal grains as a whole is sparse, and the grain size in the layer formed thinly in the vicinity of the surface in the cross-sectional direction of the sample is extremely small as compared with the internal crystal grain size. .

本發明人認為,比較材2中未形成之在表層中出現的微細晶粒層在實施例2中具有軟質特性,並且促進兼具抗拉強度和伸長特性。 The inventors believe that the fine crystal grain layer which is not formed in the surface layer 2 which is not formed in the surface layer has soft properties in Example 2, and promotes both tensile strength and elongation characteristics.

通常可理解,如果進行以軟質化為目的的熱處理,則如比較材2那樣通過再結晶而形成了均勻地粗大化的晶粒。然而,在實施材2中,即使實行在內部形成粗大晶粒的退火處理,也會在表層中殘存微細晶粒層。因此,認為實施材2獲得了雖為軟質銅材但抗拉強度和伸長優異的軟質低濃度銅合金材料。 In general, it is understood that when the heat treatment for the purpose of softening is performed, crystal grains which are uniformly coarsened are formed by recrystallization as in the comparative material 2. However, in the material 2, even if the annealing treatment for forming coarse crystal grains inside is performed, the fine crystal grain layer remains in the surface layer. Therefore, it is considered that the implement 2 obtains a soft low-concentration copper alloy material which is a soft copper material but is excellent in tensile strength and elongation.

此外,基於第8圖和第9圖所示的晶體結構的截面照片,測定比較材2 和實施材2的試料的表層中的平均晶粒尺寸。 Further, based on the cross-sectional photograph of the crystal structure shown in FIGS. 8 and 9, the comparative material 2 is measured. And the average grain size in the surface layer of the sample of the material 2 was measured.

第10圖顯示表層中的平均晶粒尺寸的測定方法的概要。如第10圖所示,在從0.05mm直徑的寬度方向截面的表面沿深度方向以5μm間隔直至10μm的深度為止的線徑的20%的深度的範圍內,測定晶粒尺寸。然後,由各測定值(實測值)求出平均值,將該平均值作為平均晶粒尺寸。 Fig. 10 is a view showing an outline of a method of measuring the average grain size in the surface layer. As shown in Fig. 10, the crystal grain size was measured in a range of 20% of the wire diameter from the surface of the cross section of the 0.05 mm diameter in the width direction at a depth of 5 μm to a depth of 10 μm in the depth direction. Then, the average value was obtained from each measured value (actual measurement value), and this average value was made into the average crystal grain size.

測定的結果是,比較材2的表層中的平均晶粒尺寸為22μm,與此相對,實施材2的表層中的平均晶粒尺寸直至深度5μm為止的最表面層為7μm和直至其內部的5~10μm為止的表層為15μm,與比較材2的表層不同。將表層的平均晶粒尺寸細作為理由之一,認為獲得了高抗拉強度和伸長。另外,如果晶粒尺寸大,則龜裂沿晶體晶界進展。然而,如果表層中的晶粒尺寸小,因龜裂的進展方向改變,故進展被抑制。因此,認為實施材2的疲勞特性與比較材2相比優異。因此,為了實現本實施例的效果,作為表層的平均晶粒尺寸,較佳為15μm以下。 As a result of the measurement, the average grain size in the surface layer of the comparative material 2 was 22 μm, whereas the average grain size in the surface layer of the material 2 was up to 7 μm up to the depth of 5 μm and up to 5 μm inside. The surface layer of ~10 μm is 15 μm, which is different from the surface layer of the comparative material 2. It is considered that one of the reasons why the average grain size of the surface layer is fine is that high tensile strength and elongation are obtained. In addition, if the grain size is large, the crack progresses along the crystal grain boundary. However, if the grain size in the surface layer is small, the progress is suppressed because the progress direction of the crack changes. Therefore, it is considered that the fatigue properties of the material 2 are superior to those of the comparative material 2. Therefore, in order to achieve the effect of the present embodiment, the average grain size of the surface layer is preferably 15 μm or less.

所謂疲勞特性,是指經受反復應力時,直至材料斷裂為止的應力施加循環數或時間。 The term "fatigue property" refers to the number or time of stress application cycles until the material breaks when subjected to repeated stress.

[實施例3] [Example 3] (關於0.26mm直徑的銅銲線在退火溫度600℃時的晶體結構) (The crystal structure of a 0.26 mm diameter brazing wire at an annealing temperature of 600 ° C)

第11圖顯示為與實施材1同樣的成分組成的實施材3的試樣的徑向截面組織的截面照片,實施材3的試樣為使用對0.26mm直徑的線材在退火溫度600℃實施1小時退火的材料,第12圖為顯示比較材3的徑向截面組織的截面照片的圖。 Fig. 11 is a cross-sectional photograph showing the radial cross-sectional structure of the sample of the material 3 having the same composition as that of the material 1, and the sample of the material 3 was subjected to an annealing temperature of 600 ° C using a wire having a diameter of 0.26 mm. The hour-annealed material, Fig. 12 is a view showing a cross-sectional photograph of the radial cross-sectional structure of the comparative material 3.

如第11圖和第12圖所示,可知比較材3的晶體結構中,從表面部至中央部整體上大小相等的晶粒均勻地排列。與此相對,實施材3的晶體結構中,整體上晶粒的大小稀疏,應當特別說明的是,在試樣的截面方向的表面附近薄狀地形成的層中的晶粒尺寸與內部的晶粒尺寸相比極小。 As shown in Fig. 11 and Fig. 12, it is understood that crystal grains having the same size from the surface portion to the entire central portion are uniformly arranged in the crystal structure of the comparative material 3. On the other hand, in the crystal structure of the material 3, the size of the crystal grains as a whole is sparse, and the crystal grain size and the inner crystal in the layer formed thinly in the vicinity of the surface in the cross-sectional direction of the sample should be particularly specified. The particle size is extremely small.

這在通常情況下可理解為,如果在退火溫度600℃進行1小時退火處理,則如比較材3那樣通過再結晶而形成了均勻地粗大化的晶粒,但在本發明的情況下,認為即使在退火溫度600℃進行1小時退火處理,也會在其表層上殘存微細晶粒層,因此可獲得雖為軟質銅材但可實現後述的銅銲線的良好的抗拉強度、伸長特性的軟質低濃度銅合金材料。 In the case of the present invention, it is understood that, in the case of the present invention, it is understood that if the annealing treatment is performed at an annealing temperature of 600 ° C for 1 hour, the crystal grains which are uniformly coarsened are formed by recrystallization as in the comparative material 3, but in the case of the present invention, Even if the annealing treatment is performed at an annealing temperature of 600 ° C for 1 hour, the fine crystal grain layer remains on the surface layer. Therefore, it is possible to obtain a soft copper material, but it is possible to achieve good tensile strength and elongation properties of the brazing wire to be described later. Soft low concentration copper alloy material.

而且,基於第11圖和第12圖所示的晶體結構的截面照片,測定實施材3和比較材3的試樣的表層中的平均晶粒尺寸。這裡,關於表層中的平均晶粒尺寸的測定方法,如第1圖所示,測定從0.26mm直徑的寬度方向截面的表面沿深度方向以10μm間隔直至50μm的深度為止的位置的長度1mm的線上的範圍的晶粒尺寸,將所得的各個實測值進行平均而得的值作為表層中的平均晶粒尺寸。 Further, based on the cross-sectional photographs of the crystal structures shown in Figs. 11 and 12, the average grain size in the surface layer of the sample of the material 3 and the comparative material 3 was measured. In the method of measuring the average crystal grain size in the surface layer, as shown in Fig. 1, a line having a length of 1 mm from a position of a cross section of a 0.26 mm diameter in the width direction at a depth of 10 μm to a depth of 50 μm in the depth direction is measured. The grain size of the range is obtained by averaging the obtained measured values as the average grain size in the surface layer.

測定的結果是,比較材3的表層中的平均晶粒尺寸為50μm,與此相對,實施材3的表層中的平均晶粒尺寸為10μm,在這點上大不相同。認為由於表層的平均晶粒尺寸細,因此實現了後述的銅銲線的良好的抗拉強度、伸長特性。 As a result of the measurement, the average grain size in the surface layer of the comparative material 3 was 50 μm, whereas the average grain size in the surface layer of the material 3 was 10 μm, which was greatly different in this point. It is considered that since the average grain size of the surface layer is small, good tensile strength and elongation characteristics of the brazing wire to be described later are achieved.

[實施例4] [Example 4] (關於0.26mm直徑的銅銲線在退火溫度400℃時的晶體結構) (The crystal structure of a 0.26 mm diameter brazing wire at an annealing temperature of 400 ° C)

第13圖為將實施材4的試樣的寬度方向的截面組織在截面照片中顯示的圖,第14圖為在截面照片中將比較材4的寬度方向的截面組織顯示的圖。 Fig. 13 is a view showing a cross-sectional structure in the width direction of the sample of the material 4 in a cross-sectional photograph, and Fig. 14 is a view showing a cross-sectional structure in the width direction of the comparative material 4 in the cross-sectional photograph.

實施材4為具備氧濃度7質量ppm~8質量ppm、硫濃度5質量ppm、鈦濃度13質量ppm的0.26mm直徑的低濃度銅合金線,在退火溫度400℃經過1小時退火處理來製作。比較材4為由無氧銅(OFC)構成的0.26mm直徑的線材,在退火溫度400℃經過1小時退火處理來製作。 The material 4 was a 0.26 mm diameter low-concentration copper alloy wire having an oxygen concentration of 7 ppm by mass to 8 ppm by mass, a sulfur concentration of 5 ppm by mass, and a titanium concentration of 13 ppm by mass, and was produced by annealing at an annealing temperature of 400 ° C for 1 hour. The comparative material 4 was a 0.26 mm diameter wire made of oxygen-free copper (OFC), and was annealed at an annealing temperature of 400 ° C for 1 hour.

如第13圖和第14圖所示,可知比較材4的晶體結構中,從表面部至中央部整體上大小相等的晶粒均勻地排列。與此相對,實施材3的晶體結構,表層與內部的晶粒的大小有差異,與表層中的晶粒尺寸相比,內部的晶粒尺寸極大。 As shown in Fig. 13 and Fig. 14, it is understood that in the crystal structure of the comparative material 4, crystal grains having the same size from the surface portion to the entire central portion are uniformly arranged. On the other hand, the crystal structure of the material 3 differs in the size of the crystal grains in the surface layer and the inside, and the internal crystal grain size is extremely larger than the grain size in the surface layer.

將銅退火而使晶體組織再結晶時,實施材4易於進行再結晶化,內部的晶粒大幅度生長。 When the copper is annealed to recrystallize the crystal structure, the material 4 is easily recrystallized, and the internal crystal grains are greatly grown.

接下來,表4顯示實施材4和比較材4的電導率。 Next, Table 4 shows the electrical conductivity of the implement 4 and the comparative material 4.

如表4所示,實施材4的電導率比比較材4的電導率高,為大致同等 的,作為銲接線可以滿足。 As shown in Table 4, the electrical conductivity of the material 4 was higher than that of the comparative material 4, and was substantially equal. As a welding line can be satisfied.

以上本實施方式的銅銲線是包含Ti等且其餘部分包含不可避免的雜質的軟質低濃度銅合金材料,其中,晶體組織從表面直至線徑的20%的深度為止的表層的平均晶粒尺寸為15μm以下,其內部的平均晶粒尺寸比上述表層的平均晶粒尺寸大,從而藉由銅線表層的晶粒的微細化而可以兼有高抗拉強度和伸長,因此可以提高製品的連接可靠性。 The brazing wire of the above embodiment is a soft low-concentration copper alloy material containing Ti or the like and containing the unavoidable impurities in the remaining portion, wherein the average grain size of the surface layer of the crystal structure from the surface to a depth of 20% of the wire diameter When the thickness is 15 μm or less, the average grain size inside is larger than the average grain size of the surface layer, so that the grain size of the surface layer of the copper wire can be combined to have high tensile strength and elongation, thereby improving the connection of the article. reliability.

另外,與添加的Ti同樣地,在選自由Mg、Zr、Nb、Ca、V、Ni、Mn和Cr所組成的群組中的添加元素中也捕集作為雜質的硫(S),因此作為基體的銅母相高純度化,從而提高原材料的軟質特性。因此,確認了可獲得可以抑制銲接時對矽晶片上的脆弱的鋁焊墊帶來破壞的效果。 Further, similarly to the added Ti, sulfur (S) as an impurity is also trapped in an additive element selected from the group consisting of Mg, Zr, Nb, Ca, V, Ni, Mn, and Cr, and thus The copper matrix phase of the matrix is highly purified, thereby improving the soft properties of the raw materials. Therefore, it was confirmed that an effect of suppressing damage to the fragile aluminum pad on the germanium wafer during soldering can be obtained.

另外,本實施方式的銅銲線不需要銅的高純度化(99.999質量%以上)處理,可以藉由低價的連續鑄造軋製法實現高電導率,因此可以低成本化。 Further, the brazing wire of the present embodiment does not require high-purity (99.999 mass% or more) treatment of copper, and high electrical conductivity can be achieved by a low-cost continuous casting and rolling method, so that cost can be reduced.

此外,本實施方式的銅銲線還可以適合用作車載用功率模組用途之ψ 0.3mm左右的Al銲接線的替代品,可以避免下述問題:由於與由原材料的高熱傳導性所引起之線徑的減少所致的模組的小型化、由熱傳導性提高所引起的放熱性提高,從而因為電流密度增大而使連接可靠性降低。 Further, the brazing wire of the present embodiment can be suitably used as an alternative to an Al welding wire of about 0.3 mm for use in a vehicle power module, and can avoid the following problems: due to high thermal conductivity caused by the raw material. The miniaturization of the module due to the reduction in the wire diameter and the heat dissipation due to the improvement in thermal conductivity are improved, and the connection reliability is lowered because the current density is increased.

第1圖為用於對試樣的表層中平均晶粒尺寸的測定方法進行說明的圖;第2圖為顯示實施材1和比較材1的不同退火溫度與伸長率的關係的圖;第3圖為顯示實施材1在退火溫度500℃時的徑向截面照片的圖;第4圖為顯示實施材1在退火溫度700℃時的徑向截面照片的圖;第5圖為顯示比較材1在退火溫度500℃時的徑向截面照片的圖;第6圖為顯示實施材2和比較材2的伸長率與硬度的關係的圖;第7圖為顯示實施材2和比較材2的抗拉強度與硬度的關係的圖;第8圖為顯示直徑0.05mm的比較材2的銲接線的寬度方向的截面照片的圖;第9圖為顯示直徑0.05mm的實施材2的銲接線的寬度方向的截面照片的圖; 第10圖為表層中平均晶粒尺寸的測定方法的示意圖。 Fig. 1 is a view for explaining a method of measuring an average crystal grain size in a surface layer of a sample; and Fig. 2 is a view showing a relationship between different annealing temperatures and elongation of the material 1 and the comparative material 1; The figure shows a photograph of a radial cross section of the material 1 at an annealing temperature of 500 ° C; FIG. 4 is a diagram showing a radial cross section of the material 1 at an annealing temperature of 700 ° C; and FIG. 5 shows a comparative material 1 FIG. 6 is a view showing the relationship between the elongation and the hardness of the material 2 and the comparative material 2; and FIG. 7 is a graph showing the relationship between the elongation of the material 2 and the comparative material 2 and the hardness of the comparative material 2; FIG. 8 is a view showing a cross-sectional photograph of the weld line of the comparative material 2 having a diameter of 0.05 mm in the width direction; and FIG. 9 is a view showing the width of the weld line of the material 2 having a diameter of 0.05 mm. a photograph of a cross-sectional photograph of the direction; Figure 10 is a schematic illustration of a method of determining the average grain size in the surface layer.

第11圖為顯示直徑0.26mm的實施材3的寬度方向的截面照片的圖;第12圖為顯示直徑0.26mm的比較材3的寬度方向的截面照片的圖;第13圖為顯示直徑0.26mm的實施材4的寬度方向的截面照片的圖;以及第14圖為顯示直徑0.26mm的比較材4的寬度方向的截面照片的圖。 Fig. 11 is a view showing a photograph of a cross section in the width direction of the material 3 having a diameter of 0.26 mm; Fig. 12 is a view showing a photograph of a cross section in the width direction of the comparative material 3 having a diameter of 0.26 mm; and Fig. 13 is a view showing a diameter of 0.26 mm. FIG. 14 is a view showing a cross-sectional photograph of the comparative material 4 having a diameter of 0.26 mm in the width direction.

Claims (5)

一種銅銲線,其中該銅銲線的特徵在於:由軟質低濃度銅合金材料構成,所述軟質低濃度銅合金材料包含選自由Ti、Mg、Zr、Nb、Ca、V、Ni、Mn和Cr所組成的群組中的添加元素且其餘部分為銅,所述銅銲線的晶體組織從至少其表面向內部直至線徑的20%的深度為止的平均晶粒尺寸為20μm以下,且表層的平均晶粒尺寸為5~15μm,其內部的平均晶粒尺寸為50~100μm。 A copper bonding wire, wherein the brazing wire is characterized by: a soft low-concentration copper alloy material comprising: selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn, and An additive element in the group consisting of Cr and the remainder being copper, and the crystal grain structure of the brazing wire has an average grain size of at least 20 μm from the surface to the inside to a depth of 20% of the wire diameter, and the surface layer The average grain size is 5 to 15 μm, and the internal average grain size is 50 to 100 μm. 如申請專利範圍第1項所述的銅銲線,其中,含有超過2質量ppm的量的氧,含有2質量ppm以上12質量ppm以下的硫。 The copper wire according to the first aspect of the invention, which contains oxygen in an amount of more than 2 ppm by mass, and contains 2 ppm by mass or more and 12 ppm by mass or less of sulfur. 如申請專利範圍第1項或第2項所述的銅銲線,其中,抗拉強度為210MPa以上,伸長率為15%以上,以及維氏硬度為65Hv以下。 The brazing wire according to the first or second aspect of the invention, wherein the tensile strength is 210 MPa or more, the elongation is 15% or more, and the Vickers hardness is 65 Hv or less. 如申請專利範圍第1項或第2項所述的銅銲線,其中,電導率為98%IACS以上。 The brazing wire according to claim 1 or 2, wherein the electrical conductivity is 98% IACS or more. 如申請專利範圍第1項或第2項所述的銅銲線,其中,所述添加元素為4質量ppm以上55質量ppm以下的Ti且含有超過2質量ppm且為30質量ppm以下的氧。 The copper bonding wire according to the first or second aspect of the invention, wherein the additive element is Ti of 4 ppm by mass or more and 55 ppm by mass or less and contains more than 2 ppm by mass and 30 ppm by mass or less of oxygen.
TW101125590A 2011-07-21 2012-07-16 Copper wire TWI579095B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011160355A JP6019547B2 (en) 2011-07-21 2011-07-21 Copper bonding wire

Publications (2)

Publication Number Publication Date
TW201306985A TW201306985A (en) 2013-02-16
TWI579095B true TWI579095B (en) 2017-04-21

Family

ID=47784450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101125590A TWI579095B (en) 2011-07-21 2012-07-16 Copper wire

Country Status (3)

Country Link
JP (1) JP6019547B2 (en)
CN (1) CN103031464B (en)
TW (1) TWI579095B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUE055485T2 (en) * 2014-07-11 2021-11-29 Heraeus Deutschland Gmbh & Co Kg Process for manufacturing of a thick copper wire for bonding applications
TWI548480B (en) * 2015-03-26 2016-09-11 樂金股份有限公司 Copper bonding wire and methods for manufacturing the same
CN104810111A (en) * 2015-04-23 2015-07-29 德州学院 Signal transmission cable core
KR20180008245A (en) 2015-06-15 2018-01-24 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 Bonding wire for semiconductor device
CN105161476B (en) * 2015-06-19 2018-10-30 汕头市骏码凯撒有限公司 A kind of bonding brass wire and its manufacturing method for thin space IC package
KR101659254B1 (en) 2015-07-23 2016-09-22 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 Bonding wire for semiconductor device
TWI556337B (en) * 2015-07-24 2016-11-01 Nippon Micrometal Corp Connection lines for semiconductor devices
CN107887053B (en) * 2016-09-29 2019-12-31 日立金属株式会社 Plated copper wire, plated stranded wire, insulated wire, and method for producing plated copper wire
SG11202105564QA (en) * 2018-11-29 2021-06-29 Showa Denko Materials Co Ltd Method for producing bonded object and semiconductor device and copper bonding paste
CN109735738A (en) * 2019-03-07 2019-05-10 山东融金粉末科技股份有限公司 A kind of low-temperature high-toughness soft copper alloy material and preparation method thereof
WO2021111908A1 (en) * 2019-12-02 2021-06-10 日鉄マイクロメタル株式会社 Semiconductor device copper bonding wire and semiconductor device
CN111599782B (en) * 2020-04-03 2022-02-22 广东佳博电子科技有限公司 Copper-based bonding wire with nickel plated surface and preparation method thereof
CN115148419B (en) * 2022-07-14 2023-03-24 四川威纳尔特种电子材料有限公司 High-conductivity antioxidant microalloyed copper alloy bonding wire and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786325A (en) * 1993-09-14 1995-03-31 Hitachi Cable Ltd Copper wire for electronic device
CN1724700A (en) * 2004-07-20 2006-01-25 日立电线株式会社 Cu alloy material, method of manufacturing cu alloy conductor using the same, cu alloy conductor obtained by the method, and cable or trolley wire using the cu alloy conductor
JP2010265511A (en) * 2009-04-17 2010-11-25 Hitachi Cable Ltd Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire
US20110107946A1 (en) * 2008-07-15 2011-05-12 Ihi Corporation Method and device for controlling bed height of fluidized bed gasification furnace in gasification facility

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002294369A (en) * 2001-03-30 2002-10-09 Kobe Steel Ltd High strength copper alloy and production method therefor
JP4674483B2 (en) * 2005-03-30 2011-04-20 日立電線株式会社 Copper material manufacturing method and copper material
JP2006274383A (en) * 2005-03-30 2006-10-12 Hitachi Cable Ltd Method for manufacturing copper material, and copper material
JP5147040B2 (en) * 2006-06-21 2013-02-20 日立電線株式会社 Method for producing copper alloy conductor
JP2008041447A (en) * 2006-08-07 2008-02-21 Hitachi Cable Ltd Conductor for cable, manufacturing method of the same, and flex-resistant cable using the same
JP5604882B2 (en) * 2009-03-10 2014-10-15 日立金属株式会社 Manufacturing method of copper rough drawing wire having low semi-softening temperature, manufacturing method of copper wire, and copper wire
JP5077416B2 (en) * 2010-02-08 2012-11-21 日立電線株式会社 Soft dilute copper alloy material, soft dilute copper alloy wire, soft dilute copper alloy plate, soft dilute copper alloy twisted wire and cables, coaxial cables and composite cables using these

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786325A (en) * 1993-09-14 1995-03-31 Hitachi Cable Ltd Copper wire for electronic device
CN1724700A (en) * 2004-07-20 2006-01-25 日立电线株式会社 Cu alloy material, method of manufacturing cu alloy conductor using the same, cu alloy conductor obtained by the method, and cable or trolley wire using the cu alloy conductor
US20110107946A1 (en) * 2008-07-15 2011-05-12 Ihi Corporation Method and device for controlling bed height of fluidized bed gasification furnace in gasification facility
JP2010265511A (en) * 2009-04-17 2010-11-25 Hitachi Cable Ltd Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire

Also Published As

Publication number Publication date
JP2013026475A (en) 2013-02-04
TW201306985A (en) 2013-02-16
CN103031464B (en) 2015-09-23
JP6019547B2 (en) 2016-11-02
CN103031464A (en) 2013-04-10

Similar Documents

Publication Publication Date Title
TWI579095B (en) Copper wire
JP4501818B2 (en) Copper alloy material and method for producing the same
JP5772338B2 (en) Soft dilute copper alloy wire, soft dilute copper alloy sheet and soft dilute copper alloy stranded wire
KR101704839B1 (en) Copper alloy bonding wire for semiconductor
TWI542706B (en) Aluminium alloy wire for bonding applications
KR102130230B1 (en) Coated wire
JP5556577B2 (en) Copper bonding wire
JP2013057121A (en) Method of manufacturing soft dilute copper alloy material
JP7126321B2 (en) aluminum bonding wire
JP4482605B1 (en) High purity Cu bonding wire
TW201228764A (en) Pb-free solder alloy mainly containing Zn
JP5010495B2 (en) Gold wire for semiconductor element connection
KR101474145B1 (en) Aluminium alloy wire for power semiconductor device
WO2015041018A1 (en) Bi GROUP SOLDER ALLOY, METHOD FOR BONDING ELECTRONIC PART USING SAME, AND ELECTRONIC PART MOUNTING SUBSTRATE
TW201204502A (en) Bi-Al-Zn-based Pb-free solder alloy
JP5652369B2 (en) Solar cell conductor
JP4694908B2 (en) Manufacturing method of Au fine wire for ball bonding
JP6136878B2 (en) Bi-based solder alloy, method for manufacturing the same, electronic component bonding method using the same, and electronic component mounting board
JP7126322B2 (en) aluminum bonding wire
JP6509383B2 (en) Alloyed silver wire
JP4260337B2 (en) Bonding wire for semiconductor mounting
TWI396756B (en) Electronic package alloy wire and methods for manufacturing the same
JPH07335686A (en) Gold alloy wire for bonding
TWI845654B (en) Al bonding wire
CN115315793A (en) Al bonding wire