SG11202105564QA - Method for producing bonded object and semiconductor device and copper bonding paste - Google Patents
Method for producing bonded object and semiconductor device and copper bonding pasteInfo
- Publication number
- SG11202105564QA SG11202105564QA SG11202105564QA SG11202105564QA SG11202105564QA SG 11202105564Q A SG11202105564Q A SG 11202105564QA SG 11202105564Q A SG11202105564Q A SG 11202105564QA SG 11202105564Q A SG11202105564Q A SG 11202105564QA SG 11202105564Q A SG11202105564Q A SG 11202105564QA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- copper bonding
- bonding paste
- bonded object
- producing bonded
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C22C—ALLOYS
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- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C20/00—Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
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- C23C20/04—Coating with metallic material with metals
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/8484—Sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2018/044068 WO2020110271A1 (en) | 2018-11-29 | 2018-11-29 | Method for producing bonded object and semiconductor device and copper bonding paste |
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SG11202105564QA true SG11202105564QA (en) | 2021-06-29 |
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SG11202105564QA SG11202105564QA (en) | 2018-11-29 | 2018-11-29 | Method for producing bonded object and semiconductor device and copper bonding paste |
Country Status (8)
Country | Link |
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US (1) | US11890681B2 (en) |
EP (1) | EP3889317A4 (en) |
JP (2) | JP7468358B2 (en) |
KR (1) | KR102573004B1 (en) |
CN (1) | CN113166945B (en) |
SG (1) | SG11202105564QA (en) |
TW (1) | TWI841606B (en) |
WO (1) | WO2020110271A1 (en) |
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CN113851442A (en) * | 2020-06-28 | 2021-12-28 | 苏州秦绿电子科技有限公司 | High-power thin patch type bridge rectifier |
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JPS4928639B1 (en) | 1969-06-17 | 1974-07-27 | ||
JPS506081B1 (en) | 1970-12-09 | 1975-03-11 | ||
US4724040A (en) * | 1986-01-14 | 1988-02-09 | Asahi Chemical Research Laboratory Co., Ltd. | Method for producing electric circuits on a base boad |
FR2750980B1 (en) * | 1996-07-12 | 1998-11-06 | Engelhard Clal Sas | BOTTOM OF DIE WITH REPORTED Nipples |
JPH10256687A (en) * | 1997-03-14 | 1998-09-25 | Matsushita Electric Ind Co Ltd | Conductor paste composition for filling it into via hole, and printed circuit board using the same |
JP5006081B2 (en) | 2007-03-28 | 2012-08-22 | 株式会社日立製作所 | Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof |
JP5437111B2 (en) * | 2010-03-01 | 2014-03-12 | 日東電工株式会社 | Die bond film, dicing die bond film and semiconductor device |
JP4928639B2 (en) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | Bonding material and bonding method using the same |
WO2011114747A1 (en) * | 2010-03-18 | 2011-09-22 | 古河電気工業株式会社 | Electrically conductive paste, and electrically conductive connection member produced using the paste |
JP5311147B2 (en) * | 2010-08-25 | 2013-10-09 | 株式会社豊田中央研究所 | Surface-coated metal nanoparticles, production method thereof, and metal nanoparticle paste including the same |
US10141084B2 (en) * | 2010-10-08 | 2018-11-27 | Cheil Industries, Inc. | Electronic device |
JP4859999B1 (en) * | 2010-12-21 | 2012-01-25 | パナソニック株式会社 | Multilayer wiring substrate, multilayer wiring substrate manufacturing method, and via paste |
JP6019547B2 (en) * | 2011-07-21 | 2016-11-02 | 日立金属株式会社 | Copper bonding wire |
CN103733330A (en) * | 2011-08-01 | 2014-04-16 | 日本特殊陶业株式会社 | Semiconductor power module, method for manufacturing semiconductor power module, and circuit board |
KR102023374B1 (en) | 2012-03-29 | 2019-09-20 | 주식회사 동진쎄미켐 | Copper paste composition for printing and the forming method for metal pattern using the same |
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JP6199048B2 (en) | 2013-02-28 | 2017-09-20 | 国立大学法人大阪大学 | Bonding material |
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WO2015029152A1 (en) | 2013-08-28 | 2015-03-05 | 株式会社日立製作所 | Semiconductor device |
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US10232472B2 (en) * | 2014-11-12 | 2019-03-19 | University Of Maryland College Park | Transient liquid phase sinter pastes and application and processing methods relating thereto |
US10347388B2 (en) * | 2015-03-05 | 2019-07-09 | Namics Corporation | Conductive copper paste, conductive copper paste cured film, and semiconductor device |
WO2016182663A1 (en) * | 2015-05-08 | 2016-11-17 | Henkel IP & Holding GmbH | Sinterable films and pastes and methods for the use thereof |
EP3009211B1 (en) * | 2015-09-04 | 2017-06-14 | Heraeus Deutschland GmbH & Co. KG | Metal paste and its use for joining components |
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JP6617049B2 (en) * | 2016-02-18 | 2019-12-04 | 株式会社豊田中央研究所 | Conductive paste and semiconductor device |
MY194769A (en) * | 2016-04-28 | 2022-12-15 | Hitachi Chemical Co Ltd | Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device |
US10930612B2 (en) * | 2017-01-11 | 2021-02-23 | Showa Denko Materials Co., Ltd. | Copper paste for pressureless bonding, bonded body and semiconductor device |
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JP7222346B2 (en) * | 2017-03-15 | 2023-02-15 | 株式会社レゾナック | METAL PASTE FOR JOINING, JOINTED BODY AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
KR102057255B1 (en) * | 2017-03-22 | 2019-12-18 | 주식회사 엘지화학 | Resin composition for semiconductor package, prepreg and metal clad laminate using the same |
CN110431657A (en) * | 2017-03-24 | 2019-11-08 | 三菱电机株式会社 | Semiconductor device and its manufacturing method |
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KR102573004B1 (en) | 2023-08-30 |
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US20220028824A1 (en) | 2022-01-27 |
JP2024010136A (en) | 2024-01-23 |
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TWI841606B (en) | 2024-05-11 |
CN113166945B (en) | 2024-01-02 |
WO2020110271A1 (en) | 2020-06-04 |
EP3889317A1 (en) | 2021-10-06 |
JP7468358B2 (en) | 2024-04-16 |
EP3889317A4 (en) | 2021-11-24 |
KR20210096147A (en) | 2021-08-04 |
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