TWI815900B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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Publication number
TWI815900B
TWI815900B TW108119433A TW108119433A TWI815900B TW I815900 B TWI815900 B TW I815900B TW 108119433 A TW108119433 A TW 108119433A TW 108119433 A TW108119433 A TW 108119433A TW I815900 B TWI815900 B TW I815900B
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Taiwan
Prior art keywords
wafer
sheet
polyester
polyester sheet
frame
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TW108119433A
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English (en)
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TW202002055A (zh
Inventor
原田成規
松澤稔
木內人
淀良彰
荒川太朗
上里昌充
河村慧美子
藤井祐介
宮井俊輝
大前卷子
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日商迪思科股份有限公司
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Publication of TW202002055A publication Critical patent/TW202002055A/zh
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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    • C09J167/00—Adhesives based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Adhesives based on derivatives of such polymers
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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本發明的課題是在於不使品質降低，形成裝置晶片。 其解決手段為一種晶圓的加工方法，係將在藉由分割預定線所區劃的表面的各區域形成有複數的裝置之晶圓分割成各個的裝置晶片之晶圓的加工方法，其特徵係具備： 聚酯系薄片配設工程，其係將晶圓定位於具有收容晶圓的開口的框架的該開口內，在該晶圓的背面及該框架的外周配設聚酯系薄片； 一體化工程，其係加熱該聚酯系薄片，藉由熱壓著來使該晶圓與該框架隔著該聚酯系薄片而一體化； 分割工程，其係使用可旋轉地具備切削刀刃的切削裝置來沿著分割預定線切削該晶圓，將該晶圓分割成各個的裝置晶片；及 拾取工程，其係藉由從該聚酯系薄片側噴空氣，各自地頂起裝置晶片，從該聚酯系薄片拾取各個的該裝置晶片。

Description

晶圓的加工方法
本發明是有關將在藉由分割預定線所區劃的表面的各區域形成有複數的裝置之晶圓分割成各個的裝置之晶圓的加工方法。
在被使用於行動電話或個人電腦等的電子機器之裝置晶片的製造工程中，首先，在由半導體等的材料所成的晶圓的表面設定複數的交叉的分割預定線(分割道)。然後，在以該分割預定線所區劃的各區域形成IC (Integrated Circuit)、LSI(Large-scale Integrated Circuit)等的裝置。
然後，將被稱為切割膠帶的黏著膠帶貼著於該晶圓的背面，形成晶圓、黏著膠帶及環狀的框架成為一體的框架單元，該切割膠帶是在具有開口的環狀的框架被貼成堵塞該開口。然後，一旦沿著該分割預定線來加工分割在框架單元所含的晶圓，則形成各個的裝置晶片。
在晶圓的分割是例如使用切削裝置。切削裝置是具備：隔著黏著膠帶來保持晶圓的吸盤台(chuck table)、切削晶圓的切削單元等。切削單元是具備：具備圓環狀的砥石部的切削刀刃，及貫穿於該切削刀刃的中央的貫通孔，使切削刀刃旋轉的主軸(spindle)。
在切削晶圓時，將框架單元載於吸盤台上，隔著黏著膠帶來使晶圓保持於吸盤台，藉由使主軸旋轉來使切削刀刃旋轉，使切削單元下降至預定的高度位置。然後，使吸盤台及切削單元沿著與吸盤台的上面平行的方向來相對移動，沿著分割預定線來使晶圓切削於切削刀刃。如此一來，晶圓會被分割。
然後，從切削裝置搬出框架單元，實施對黏著膠帶照射紫外線等的處理，而使黏著膠帶的黏著力降低，拾取裝置晶片。作為裝置晶片的生產效率高的加工裝置，有可用一個的裝置來連續實施晶圓的分割及朝黏著膠帶的紫外線的照射之切削裝置為人所知(參照專利文獻1)。從黏著膠帶上拾取的裝置晶片是被安裝於預定的配線基板等。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特許第3076179號公報
(發明所欲解決的課題)
黏著膠帶是包含基材層及在被配設在該基材層上的糊層。在切削裝置中，為了將晶圓確實分割，而以切削刀刃的下端會到達比晶圓的下面更低的位置之方式，切削單元定位於預定的高度。因此，切削晶圓的切削刀刃是將黏著膠帶的糊層也切削。因此，在晶圓的切削時，與來自晶圓的切削屑一起產生來自糊層的切削屑。
在晶圓的切削時，切削液會被供給至晶圓或切削刀刃，藉由切削而產生的該切削屑會被取入至該切削液而擴散於晶圓的表面。在此，來自糊層的切削屑容易再附著於裝置的表面，且在其後的晶圓的洗淨工程等也不容易除去。因此，一旦來自糊層的切削屑附著，則裝置晶片的品質的降低會成問題。
本發明是有鑑於如此的問題點而研發者，其目的是在於提供一種切削屑不易附著於裝置的表面，抑制裝置晶片的品質的降低之晶圓的加工方法。 (用以解決課題的手段)
若根據本發明之一形態，則提供一種晶圓的加工方法，係將在藉由分割預定線所區劃的表面的各區域形成有複數的裝置之晶圓分割成各個的裝置晶片之晶圓的加工方法，其特徵係具備： 聚酯系薄片配設工程，其係將晶圓定位於具有收容晶圓的開口的框架的該開口內，在該晶圓的背面及該框架的外周配設聚酯系薄片； 一體化工程，其係加熱該聚酯系薄片，藉由熱壓著來使該晶圓與該框架隔著該聚酯系薄片而一體化； 分割工程，其係使用可旋轉地具備切削刀刃的切削裝置來沿著分割預定線切削該晶圓，將該晶圓分割成各個的裝置晶片；及 拾取工程，其係藉由從該聚酯系薄片側噴空氣，各自地頂起裝置晶片，從該聚酯系薄片拾取各個的該裝置晶片。
較理想是在該一體化工程中，藉由紅外線的照射來實施該熱壓著。
又，較理想是在該一體化工程中，實施一體化之後，除去從該框架的外周超出的聚酯系薄片。
又，較理想是在該拾取工程中，將該聚酯系薄片擴張而擴大各裝置晶片間的間隔。
又，較理想是該聚酯系薄片為聚對苯二甲酸乙二酯薄片，聚對萘二甲酸乙二酯薄片的任一者。
又，較理想是在該一體化工程中，當該聚酯系薄片為該聚對苯二甲酸乙二酯薄片時，加熱溫度為250℃~270℃，當該聚酯系薄片為該聚對萘二甲酸乙二酯薄片時，加熱溫度為160℃~180℃。
又，較理想是該晶圓，係以Si、GaN、GaAs、玻璃的任一者所構成。 [發明的效果]
本發明之一形態的晶圓的加工方法，在形成框架單元時，不使用具有糊層的黏著膠帶，使用不具備糊層的聚酯系薄片來將框架及晶圓一體化。經由聚酯系薄片來使框架及晶圓一體化的一體化工程是藉由熱壓著來實現。
實施一體化工程之後是藉由切削刀刃來切削晶圓而將晶圓分割成各個的裝置晶片，藉由從聚酯系薄片側噴空氣，各自地頂起裝置晶片，從聚酯系薄片拾取裝置晶片。被拾取的裝置晶片是分別被安裝於預定的安裝對象。另外，若在拾取時藉由空氣來頂起裝置晶片，則在從聚酯系薄片剝離時可減輕施加於裝置晶片的負荷。
切削晶圓時，在晶圓下的聚酯系薄片也切削刀刃切入，因此產生來自聚酯系薄片的切削屑。但，由於聚酯系薄片是不具備糊層，因此即使該切削屑被取入至切削水而擴散於晶圓的表面上，該切削屑也比較不易黏著於晶圓。又，即使切削屑附著於晶圓，也可藉由其後的洗淨工程等來容易地除去。
亦即，若根據本發明之一形態，則藉由熱壓著，使用不具備糊層的聚酯系薄片的框架單元的形成為可能，在晶圓的切削時不產生黏著力高的切削屑，抑制該切削屑所造成的裝置晶片的品質降低。
因此，若根據本發明之一形態，則提供一種切削屑不易附著於裝置的表面，抑制裝置晶片的品質的降低之晶圓的加工方法。
參照附圖來說明有關本發明之一形態的實施形態。首先，說明有關以本實施形態的加工方法來加工的晶圓。圖1是模式性地表示晶圓1的立體圖。晶圓1是例如由Si(矽)、SiC(碳化矽)、GaN(氮化鎵)、GaAs(砷化鎵)、或其他的半導體等的材料、或藍寶石、玻璃、石英等的材料所成的大致圓板狀的基板等。
晶圓1的表面1a是以被配列成格子狀的複數的分割預定線3來區劃。並且，在以晶圓1的表面1a的分割預定線3所區劃的各區域是形成有IC(Integrated Circuit)或LED(Light Emitting Diode)等的裝置5。本實施形態的晶圓1的加工方法是沿著分割預定線3來切削分割晶圓1，藉此形成各個的裝置晶片。
晶圓1是以切削裝置來切削。在將晶圓1搬入至該切削裝置之前，晶圓1、聚酯系薄片(sheet)及框架會被一體化，形成框架單元。晶圓1是以框架單元的狀態來搬入至切削裝置，被切削。被形成的各個的裝置晶片是被支撐於聚酯系薄片。然後，藉由擴張聚酯系薄片來擴大裝置晶片間的間隔，藉由拾取裝置來拾取裝置晶片。
環狀的框架7(參照圖2等)是例如以金屬等的材料所形成，具備比晶圓1的直徑更大的直徑的開口7a。在形成框架單元時，晶圓1是被定位於框架7的開口7a內，被收容於開口7a。
聚酯系薄片9(參照圖3等)是具有柔軟性的樹脂系薄片，表背面為平坦。而且，具有比框架7的外徑更大的直徑，不具備糊層。聚酯系薄片9是以二羧酸(具有2個羧基的化合物)及二元醇(具有2個羥基的化合物)作為單體來合成的聚合物的薄片，例如，聚對苯二甲酸乙二酯薄片或聚對萘二甲酸乙二酯薄片等，對於可視光為透明或半透明的薄片。但，聚酯系薄片9是不限於此，亦可為不透明。
由於聚酯系薄片9不具備黏著性，因此在室溫是無法貼著於晶圓1及框架7。可是，因為聚酯系薄片9具有熱可塑性，所以若在邊施加預定的壓力，邊使與晶圓1及框架7接合的狀態下加熱至融點附近的溫度，則可部分地熔化而接著於晶圓1及框架7。於是，本實施形態的晶圓1的加工方法是藉由以上般的熱壓著來將晶圓1、框架7及聚酯系薄片9一體化而形成框架單元。
其次，說明有關本實施形態的晶圓1的加工方法的各工程。首先，為了使晶圓1、聚酯系薄片9及框架7一體化的準備，實施聚酯系薄片配設工程。圖2是模式性地表示在吸盤台2的保持面2a上定位晶圓1及框架7的樣子的立體圖。如圖2所示般，聚酯系薄片配設工程是在上部具有保持面2a的吸盤台2上被實施。
吸盤台2是在上部中央具備比框架7的外徑更大的直徑的多孔質構件。該多孔質構件的上面是成為吸盤台2的保持面2a。吸盤台2是在內部具有如圖3所示般一端連通至該多孔質構件的排氣路，在該排氣路的另一端側是配設有吸引源2b。在排氣路是配設有切換連通狀態及切斷狀態的切換部2c，若切換部2c為連通狀態，則藉由吸引源2b所產生的負壓會作用於被放置在保持面2a的被保持物，被保持物會被吸引保持於吸盤台2。
在聚酯系薄片配設工程中，首先，如圖2所示般，將晶圓1及框架7載於吸盤台2的保持面2a上。此時，將晶圓1的表面1a側朝向下方，在框架7的開口7a內定位晶圓1。其次，在晶圓1的背面1b及框架7的外周配設聚酯系薄片9。圖3是模式性地表示聚酯系薄片配設工程的立體圖。如圖3所示般，以覆蓋晶圓1及框架7的方式，在兩者上配設聚酯系薄片9。
另外，在聚酯系薄片配設工程中，使用比吸盤台2的保持面2a更大的直徑的聚酯系薄片9。因為在之後被實施的一體化工程使吸盤台2所產生的負壓作用於聚酯系薄片9時，若保持面2a的全體未藉由聚酯系薄片9來覆蓋，則負壓會從間隙洩漏，無法適當地施加壓力至聚酯系薄片9。
本實施形態的晶圓1的加工方法是其次實施一體化工程，其係加熱聚酯系薄片9，藉由熱壓著來使晶圓1與該框架7隔著該聚酯系薄片9而一體化。圖4是模式性地表示一體化工程之一例的立體圖。在圖4中，以虛線來表示對於可視光可通過透明或半透明的聚酯系薄片9而辨識者。
在一體化工程中，首先，使吸盤台2的切換部2c作動，設為連通狀態，將吸引源2b連接至吸盤台2的上部的多孔質構件，使吸引源2b所產生的負壓作用於聚酯系薄片9。於是，聚酯系薄片9會藉由大氣壓來對於晶圓1及框架7緊貼。
其次，邊藉由吸引源2b來吸引聚酯系薄片9，邊加熱聚酯系薄片9，而實施熱壓著。聚酯系薄片9的加熱是例如圖4所示般，藉由被配設在吸盤台2的上方的熱風槍4來實施。
熱風槍4是在內部具備電熱線等的加熱手段及風扇等的送風機構，可將空氣加熱噴射。邊使負壓作用於聚酯系薄片9，邊藉由熱風槍4來從上面供給熱風4a至聚酯系薄片9，一旦將聚酯系薄片9加熱至預定的溫度，則聚酯系薄片9會被熱壓著於晶圓1及框架7。
並且，聚酯系薄片9的加熱是亦可藉由其他方法來實施，例如，藉由以被加熱至預定的溫度之構件來從上方推壓晶圓1及框架7而實施。圖5是模式性地表示一體化工程的其他的一例的立體圖。在圖5中，以虛線來表示對於可視光可通過透明或半透明的聚酯系薄片9而辨識者。
在圖5所示的一體化工程中，例如，使用在內部具備熱源的加熱輥6。在圖5所示的一體化工程中也首先使吸引源2b所產生的負壓作用於聚酯系薄片9，藉由大氣壓來使聚酯系薄片9緊貼於晶圓1及框架7。
然後，將加熱輥6加熱至預定的溫度，而使該加熱輥6載於吸盤台2的保持面2a的一端。然後，使加熱輥6旋轉，從該一端到另一端，在吸盤台2上滾動加熱輥6。於是，聚酯系薄片9會被熱壓著於晶圓1及框架7。此時，若在藉由加熱輥6來推下聚酯系薄片9的方向施加力，則會以比大氣壓大的壓力來實施熱壓著。另外，以氟樹脂來被覆加熱輥6的表面為理想。
又，亦可取代加熱輥6，使用在內部具備熱源且具有平坦的底板之熨斗狀的推壓構件來實施聚酯系薄片9的熱壓著。此情況，將該推壓構件加熱至預定的溫度而作為熱板，以該推壓構件從上方推壓被保持於吸盤台2的聚酯系薄片9。
聚酯系薄片9的加熱是亦可更藉由其他方法來實施。圖6是模式性地表示一體化工程的更加其他一例的立體圖。在圖6中，以虛線來表示對於可視光可通過透明或半透明的聚酯系薄片9而辨識者。在圖6所示的一體化工程中，使用被配置於吸盤台2的上方的紅外線燈8來加熱聚酯系薄片9。紅外線燈8是至少可照射聚酯系薄片9的材料具有吸收性的波長的紅外線8a。
在圖6所示的一體化工程中也首先使吸引源2b所產生的負壓作用於聚酯系薄片9，使聚酯系薄片9緊貼於晶圓1及框架7。其次，使紅外線燈8作動，對聚酯系薄片9照射紅外線8a而加熱聚酯系薄片9。於是，聚酯系薄片9會被熱壓著於晶圓1及框架7。
藉由任一的方法，一旦聚酯系薄片9被加熱至其融點附近的溫度，則聚酯系薄片9會被熱壓著於晶圓1及框架7。將聚酯系薄片9熱壓著之後，使切換部2c作動，將吸盤台2的多孔質構件從吸引源2b切離，解除吸盤台2的吸附。
其次，切斷從框架7的外周超出的聚酯系薄片9而除去。圖7(A)是模式性地表示切斷聚酯系薄片9的樣子的立體圖。在切斷是如圖7(A)所示般，使用圓環狀的刀具(cutter)10。該刀具10是具備貫通孔，可繞著被貫穿於該貫通孔的旋轉軸旋轉。
首先，將圓環狀的刀具10定位於框架7的上方。此時，將刀具10的旋轉軸對準吸盤台2的徑方向。其次，使刀具10下降，而以框架7及刀具10來夾入聚酯系薄片9，切斷聚酯系薄片9。於是，在聚酯系薄片9形成切斷痕9a。
而且，使刀具10沿著框架7來繞著框架7的開口7a一周，藉由切斷痕9a來包圍聚酯系薄片9的預定的區域。然後，以剩下聚酯系薄片9的該區域之方式，除去切斷痕9a的外周側的區域的聚酯系薄片9。於是，包含從框架7的外周超出的區域，可除去聚酯系薄片9的不要的部分。
另外，在聚酯系薄片的切斷是亦可使用超音波刀具，亦可將以超音波頻帶的頻率來使上述的圓環狀的刀具10振動的振動源連接至該刀具10。並且，切斷聚酯系薄片9時，為了使容易切斷，亦可將該聚酯系薄片9冷卻而使硬化。藉由以上，形成晶圓1與框架7會隔著聚酯系薄片9來一體化的框架單元11。圖7(B)是模式性地表示被形成的框架單元11的立體圖。
另外，在實施熱壓著時，聚酯系薄片9較理想是被加熱至其融點以下的溫度。因為一旦加熱溫度超過融點，則有聚酯系薄片9溶解而無法維持薄片的形狀的情況。又，聚酯系薄片9較理想是被加熱至其軟化點以上的溫度。因為若加熱溫度為達軟化點，則無法適當地實施熱壓著。亦即，聚酯系薄片9是被加熱至其軟化點以上且其融點以下的溫度為理想。
而且，一部分的聚酯系薄片9是也有不具明確的軟化點的情況。於是，在實施熱壓著時，聚酯系薄片9較理想是被加熱至比其融點更低20℃的溫度以上且其融點以下的溫度。
又，例如，聚酯系薄片9為聚對苯二甲酸乙二酯薄片時，加熱溫度是設為250℃~270℃。又，該聚酯系薄片9為聚對萘二甲酸乙二酯薄片時，加熱溫度是設為160℃~180℃。
在此，所謂加熱溫度是意指實施一體化工程時的聚酯系薄片9的溫度。例如，在熱風槍4、加熱輥6、紅外線燈8等的熱源是可設定輸出溫度的機種會實用地提供，但即便使用該熱源來加熱聚酯系薄片9，也會有未達到設定聚酯系薄片9的溫度的該輸出溫度的情況。於是，為了將聚酯系薄片9加熱至預定的溫度，亦可將熱源的輸出溫度設定為比聚酯系薄片9的融點更高。
其次，本實施形態的晶圓1的加工方法是實施分割工程，其係以切削刀刃來切削成為框架單元11的狀態的晶圓1而分割。分割工程是例如以圖8所示的切削裝置來實施。圖8是模式性地表示分割工程的立體圖。
切削裝置12是具備：切削被加工物的切削單元14，及保持被加工物的吸盤台(未圖示)。切削單元14是具備：具備圓環狀的砥石部的切削刀刃18，及前端側會貫穿於該切削刀刃18的中央的貫通孔，使切削刀刃18旋轉的主軸(未圖示)。切削刀刃18是例如具備：在中央具備該貫通孔的環狀基台，及被配設於該環狀基台的外周部的環狀的砥石部。
該主軸的基端側是被連接至主軸外殼16的內部所收容的主軸馬達(未圖示)，一旦使主軸馬達作動，則可旋轉切削刀刃18。
一旦藉由切削刀刃18來切削被加工物，則會藉由切削刀刃18與被加工物的摩擦而產生熱。並且，一旦被加工物被切削，則從被加工物產生切削屑。於是，為了除去藉由切削所產生的熱及切削屑，在切削被加工物的期間，對切削刀刃18及被加工物供給純水等的切削水。切削單元14是例如在切削刀刃18的側方具備對切削刀刃18等供給切削水的切削水供給噴嘴20。
在切削晶圓1時，使框架單元11載於吸盤台上，隔著聚酯系薄片9來使晶圓1保持於吸盤台。然後，使吸盤台旋轉，將晶圓1的分割預定線3對準切削裝置12的加工進給方向。並且，以切削刀刃18會被配設於分割預定線3的延長線的上方之方式，調整吸盤台及切削單元14的相對位置。
其次，藉由使主軸旋轉來使切削刀刃18旋轉。然後，使切削單元14下降至預定的高度位置，沿著與吸盤台的上面平行的方向來使吸盤台與切削單元14相對移動。於是，旋轉的切削刀刃18的砥石部會接觸於晶圓1，晶圓1會被切削，沿著分割預定線3的切削痕3a會被形成於晶圓1及聚酯系薄片9。
沿著一條的分割預定線3來實施切削之後，使吸盤台及切削單元14沿著與加工進給方向垂直的分度進給方向移動，沿著其他分割預定線3來同樣地實施晶圓1的切削。沿著按照一個方向的全部的分割預定線3來實施切削之後，使吸盤台繞著與保持面垂直的軸旋轉，同樣地沿著按照其他方向的分割預定線3來切削晶圓1。一旦沿著晶圓1的全部的分割預定線3切削晶圓1，則完成分割步驟。
切削裝置12是亦可在切削單元14的附近具備洗淨單元(未圖示)。藉由切削單元14來切削的晶圓1是亦可被搬送至該洗淨單元，藉由該洗淨單元來洗淨。例如，洗淨單元是具備：保持框架單元11的洗淨台，及可往復移動於框架單元11的上方的洗淨水供給噴嘴。
使洗淨台繞著與保持面垂直的軸旋轉，若邊從洗淨水供給噴嘴供給純水等的洗淨液至晶圓1，邊使洗淨水供給噴嘴以通過該保持面的中央的上方的路徑來往復移動，則可洗淨晶圓1的表面1a側。
一旦實施分割步驟，則晶圓1被分割成各個的裝置晶片。被形成的裝置晶片是被支撐於聚酯系薄片9。切削晶圓1時，為了確實地分割晶圓1，而以切削刀刃18的下端的高度位置會成為比晶圓1的背面1b更低的高度位置之方式，切削單元14被定位於預定的高度。因此，一旦切削晶圓1，則聚酯系薄片9也被切削，產生來自聚酯系薄片9的切削屑。
在框架單元11不是聚酯系薄片9而是使用黏著膠帶時，產生來自黏著膠帶的糊層的切削屑。此情況，該切削屑會被取入至從切削水供給噴嘴20噴射的切削水，被擴散於晶圓1的表面1a上。來自糊層的切削屑是容易再附著於裝置5的表面，且在切削後被實施的晶圓1的洗淨工程等也不易除去。一旦來自糊層的切削屑附著，則被形成的裝置晶片的品質的降低會成問題。
相對於此，本實施形態的晶圓1的加工方法，在框架單元11不是具備糊層的黏著膠帶，而是使用不具備糊層的聚酯系薄片9。即使產生來自聚酯系薄片9的切削屑，被取入至切削水而擴大於晶圓的表面上，該切削屑也比較不易黏著於晶圓1。又，即使切削屑附著於晶圓1，也容易藉由其後的洗淨工程等來除去。因此，該切削屑所造成的裝置晶片的品質降低會被抑制。
本實施形態的晶圓1的加工方法是其次實施從聚酯系薄片9拾取各個的該裝置晶片的拾取工程。在拾取工程中，使用在圖9下部所示的拾取裝置22。圖9是模式性地表示往拾取裝置22之框架單元11的搬入的立體圖。
拾取裝置22是具備：具有比晶圓1的直徑更大的直徑的圓筒狀的鼓24，及包含框架支撐台30的框架保持單元26。框架保持單元26的框架支撐台30是具備比該鼓24的直徑更大的直徑的開口，被配設於與該鼓24的上端部同樣的高度，從外周側包圍該鼓24的上端部。
在框架支撐台30的外周側是配設有夾緊裝置28。一旦將框架單元11載於框架支撐台30上，藉由夾緊裝置28來使把持框架單元11的框架7，則框架單元11會被固定於框架支撐台30。
框架支撐台30是藉由沿著鉛直方向來伸長的複數的桿32所支撐，在各桿32的下端部是配設有使該桿32昇降的汽缸34。複數的汽缸34是被支撐於圓板狀的底部36。一旦使各汽缸34作動，則框架支撐台30會相對於鼓24降低。
在鼓24的內部是配設有從下方頂起被支撐於聚酯系薄片9的裝置晶片之頂起機構38。頂起機構38是具有朝向上方噴出空氣38a的機能。並且，在鼓24的上方是配設有可吸引保持裝置晶片的吸頭(collet)40(參照圖10(B))。頂起機構38及吸頭40是可移動於沿著框架支撐台30的上面的水平方向。並且，吸頭40是經由切換部40b(參照圖10(B))來連接至吸引源40a(參照圖10(B))。
在拾取工程中，首先，以拾取裝置22的鼓24的上端的高度與框架支撐台30的上面的高度會一致的方式，使汽缸34作動來調節框架支撐台30的高度。其次，將從切削裝置12搬出的框架單元11載於拾取裝置22的鼓24及框架支撐台30上。
然後，藉由夾緊裝置28在框架支撐台30上固定框架單元11的框架7。圖10(A)是模式性地表示被固定於框架支撐台30上的框架單元11的剖面圖。晶圓1是藉由分割步驟來形成切削痕3a被分割。
其次，使汽缸34作動，將框架保持單元26的框架支撐台30相對於鼓24降低。於是，如圖10(B)所示般，聚酯系薄片9會被擴張至外周方向。圖10(B)是模式性地表示拾取工程的剖面圖。
一旦聚酯系薄片9被擴張至外周方向，則被支撐於聚酯系薄片9的各裝置晶片1c的間隔會被擴大。於是，裝置晶片1c彼此間不易接觸，各個的裝置晶片1c的拾取變容易。然後，決定成為拾取的對象的裝置晶片1c，使頂起機構38移動至該裝置晶片1c的下方，使吸頭40移動至該裝置晶片1c的上方。
然後，使頂起機構38作動來從聚酯系薄片9側噴空氣38a，藉此頂起該裝置晶片1c。然後，使切換部40b作動來使吸頭40連通至吸引源40a。於是，該裝置晶片1c會藉由吸頭40來吸引保持，裝置晶片1c會從聚酯系薄片9拾取。被拾取的各個的裝置晶片1c是其後被安裝於預定的配線基板等使用。
另外，若在裝置晶片的拾取時從該聚酯系薄片9側噴空氣38a至裝置晶片來頂起該裝置晶片，則在從該聚酯系薄片9剝離裝置晶片時施加於該裝置晶片的負荷會被減輕。
如以上說明般，若根據本實施形態的晶圓的加工方法，則可不使用黏著膠帶，形成包含晶圓1的框架單元11。因此，即使切削晶圓1也不會產生來自黏著膠帶的糊層的切削屑，亦無該切削屑附著於裝置晶片1c的情形。因此，無使裝置晶片1c的品質降低的情形。
另外，本發明是不限於上述實施形態的記載，可實施各種變更。例如，上述實施形態是說明有關聚酯系薄片9例如為聚對苯二甲酸乙二酯薄片或聚對萘二甲酸乙二酯薄片的情況，但本發明之一形態是不限於此。例如，聚酯系薄片是亦可使用其他材料，亦可為聚對苯二甲酸丙二酯薄片、聚對苯二甲酸丁二酯薄片、聚對苯二甲酸丁二酯等。
其他，上述實施形態的構造、方法等是可在不脫離本發明的目的範圍適當地實施變更。
1‧‧‧晶圓 1a‧‧‧表面 1b‧‧‧背面 3‧‧‧分割預定線 3a‧‧‧切削痕 5‧‧‧裝置 7‧‧‧框架 7a‧‧‧開口 9‧‧‧聚酯系薄片 9a‧‧‧切斷痕 11‧‧‧框架單元 2‧‧‧吸盤台 2a‧‧‧保持面 2b，40a‧‧‧吸引源 2c，40b‧‧‧切換部 4‧‧‧熱風槍 4a‧‧‧熱風 6‧‧‧加熱輥 8‧‧‧紅外線燈 8a‧‧‧紅外線 10‧‧‧刀具 12‧‧‧切削裝置 14‧‧‧切削單元 16‧‧‧主軸外殼 18‧‧‧切削刀刃 20‧‧‧切削水供給噴嘴 22‧‧‧拾取裝置 24‧‧‧鼓 26‧‧‧框架保持單元 28‧‧‧夾緊裝置 30‧‧‧框架支撐台 32‧‧‧桿 34‧‧‧汽缸 36‧‧‧底部 38‧‧‧頂起機構 38a‧‧‧空氣 40‧‧‧吸頭
圖1是模式性地表示晶圓的立體圖。 圖2是模式性地表示在吸盤台的保持面上定位晶圓及框架的樣子的立體圖。 圖3是模式性地表示聚酯系薄片配設工程的立體圖。 圖4是模式性地表示一體化工程之一例的立體圖。 圖5是模式性地表示一體化工程之一例的立體圖。 圖6是模式性地表示一體化工程之一例的立體圖。 圖7(A)是是模式性地表示切斷聚酯系薄片的樣子的立體圖，圖7(B)是模式性地表示被形成的框架單元的立體圖。 圖8是模式性地表示分割工程的立體圖。 圖9是模式性地表示往拾取裝置之框架單元的搬入的立體圖。 圖10(A)是模式性地表示被固定於框架支撐台上的框架單元的剖面圖，圖10(B)是模式性地表示拾取工程的剖面圖。
1‧‧‧晶圓
1b‧‧‧背面
2‧‧‧吸盤台
2a‧‧‧保持面
2b‧‧‧吸引源
2c‧‧‧切換部
4‧‧‧熱風槍
4a‧‧‧熱風
7‧‧‧框架
7a‧‧‧開口
9‧‧‧聚酯系薄片

Claims (7)

  1. 一種晶圓的加工方法，係將在藉由分割預定線所區劃的表面的各區域形成有複數的裝置之晶圓分割成各個的裝置晶片之晶圓的加工方法，其特徵係具備：聚酯系薄片配設工程，其係將晶圓定位於具有收容晶圓的開口的框架的該開口內，在該晶圓的背面及該框架的外周配設不具備糊層的聚酯系薄片；一體化工程，其係加熱該聚酯系薄片，藉由熱壓著來使該晶圓與該框架隔著該聚酯系薄片而一體化；分割工程，其係使用可旋轉地具備切削刀刃的切削裝置來沿著分割預定線切削該晶圓，將該晶圓分割成各個的裝置晶片；及拾取工程，其係藉由從該聚酯系薄片側噴空氣，各自地頂起裝置晶片，從該聚酯系薄片拾取各個的該裝置晶片，在該聚酯系薄片配設工程中，將該聚酯系薄片直接配設於該晶圓。
  2. 如申請專利範圍第1項之晶圓的加工方法，其中，在該一體化工程中，藉由紅外線的照射來實施該熱壓著。
  3. 如申請專利範圍第1項之晶圓的加工方法，其中，在該一體化工程中，實施一體化之後，除去從該框架的外周 超出的聚酯系薄片。
  4. 如申請專利範圍第1項之晶圓的加工方法，其中，在該拾取工程中，將該聚酯系薄片擴張而擴大各裝置晶片間的間隔。
  5. 如申請專利範圍第1項之晶圓的加工方法，其中，該聚酯系薄片為聚對苯二甲酸乙二酯薄片，聚對萘二甲酸乙二酯薄片的任一者。
  6. 如申請專利範圍第5項之晶圓的加工方法，其中，在該一體化工程中，當該聚酯系薄片為該聚對苯二甲酸乙二酯薄片時，加熱溫度為250℃~270℃，當該聚酯系薄片為該聚對萘二甲酸乙二酯薄片時，加熱溫度為160℃~180℃。
  7. 如申請專利範圍第1項之晶圓的加工方法，其中，該晶圓，係以Si、GaN、GaAs、玻璃的任一者所構成。
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