TWI814857B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TWI814857B
TWI814857B TW108123778A TW108123778A TWI814857B TW I814857 B TWI814857 B TW I814857B TW 108123778 A TW108123778 A TW 108123778A TW 108123778 A TW108123778 A TW 108123778A TW I814857 B TWI814857 B TW I814857B
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wafer
polyolefin
sheet
frame
processing method
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TW202006809A (zh
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原田成規
松澤稔
木內逸人
淀良彰
荒川太朗
上里昌充
河村慧美子
藤井祐介
宮井俊輝
大前卷子
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日商迪思科股份有限公司
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Abstract

[課題]在不使品質降低的情況下形成器件晶片。 [解決手段]一種晶圓的加工方法，讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片，前述晶圓的加工方法具備：聚烯烴系片材配設步驟，將晶圓定位在具有容置晶圓之開口的框架的該開口內，並將聚烯烴系片材配設在晶圓的背面及框架的外周；一體化步驟，將該聚烯烴系片材加熱而藉由熱壓接來將晶圓及該框架透過該聚烯烴系片材而一體化；分割步驟，使用可旋轉地具備有切割刀片的切割裝置來沿著分割預定線切割該晶圓，以將該晶圓分割成一個個的器件晶片；以及拾取步驟，將該聚烯烴系片材加熱，並將器件晶片頂推，而拾取該器件晶片。

Description

晶圓的加工方法
發明領域 本發明是有關於一種讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件之晶圓的加工方法。
發明背景 在使用於行動電話或者個人電腦等之電子機器的器件晶片的製造步驟中，首先是將複數條交叉的分割預定線(切割道)設定在由半導體等之材料所構成的晶圓的正面。並且，在以該分割預定線所區劃的各區域中形成IC(積體電路，Integrated Circuit)、LSI(大型積體電路，Large-scale Integrated circuit)等器件。
之後，將對具有開口之環狀的框架黏貼成堵塞該開口之稱為切割膠帶的黏著膠帶貼附在該晶圓的背面，而形成晶圓、黏著膠帶及環狀的框架成為一體的框架單元。然後，當將包含於框架單元的晶圓沿著該分割預定線加工來分割時，可形成一個個的器件晶片。
在晶圓的分割上可使用例如切割裝置。切割裝置具備隔著黏著膠帶來保持晶圓的工作夾台、對晶圓進行切割的切割單元等。切割單元具備：切割刀片，具備圓環狀的磨石部；及主軸，貫穿於該切割刀片之中央的貫通孔且使切割刀片旋轉。
在切割晶圓時，是將框架單元載置於工作夾台之上，並且隔著黏著膠帶使晶圓保持在工作夾台，且藉由使主軸旋轉以使切割刀片旋轉，並使切割單元下降至規定的高度位置。並且，使工作夾台與切割單元沿著平行於工作夾台之上表面的方向相對移動，而使切割刀片沿著分割預定線來切割晶圓。如此一來，即可分割晶圓。
之後，將框架單元從切割裝置搬出，且施行對黏著膠帶照射紫外線等的處理來使黏著膠帶的黏著力降低，並拾取器件晶片。作為器件晶片之生產效率較高的加工裝置，已知有可以將晶圓的分割、對黏著膠帶之紫外線的照射以一個裝置來連續實施的切割裝置(參照專利文獻1)。已從黏著膠帶上被拾取的器件晶片是組裝在規定的配線基板等。 先前技術文獻 專利文獻
專利文獻1：日本專利特許第3076179號公報
發明概要 發明欲解決之課題 黏著膠帶包含基材層、及配設在該基材層上的糊層。在切割裝置中，為了確實地分割晶圓，是以切割刀片的下端到達比晶圓之下表面更低的位置的方式，來將切割單元定位在規定的高度。因此，切割晶圓的切割刀片也對黏著膠帶的糊層進行切割。從而，在晶圓的切割時，會使來自糊層的切割屑與來自晶圓的切割屑一起產生。
在晶圓的切割時，雖然會對晶圓或者切割刀片供給切割液，但會將藉由切割所產生的該切割屑攝入該切割液並於晶圓的正面擴散。於是，來自糊層的切割屑除了易於再附著在器件的正面以外，要以之後的晶圓的洗淨步驟等來去除也並非容易。因此，當來自糊層的切割屑附著時，器件晶片的品質的降低即成為問題。
本發明是有鑒於所述的問題點而作成的發明，其目的在於提供一種晶圓的加工方法，其可使切割屑不附著在器件的正面，且抑制器件晶片的品質的降低。 用以解決課題之手段
根據本發明之一態樣，可提供一種晶圓的加工方法，前述加工方法讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片，前述晶圓的加工方法之特徵在於具備： 聚烯烴系片材配設步驟，將晶圓定位在具有容置晶圓之開口的框架的該開口內，並將聚烯烴系片材配設在該晶圓的背面及該框架的外周； 一體化步驟，將該聚烯烴系片材加熱而藉由熱壓接來將該晶圓及該框架透過該聚烯烴系片材而一體化； 分割步驟，使用可旋轉地具備有切割刀片的切割裝置來沿著分割預定線切割該晶圓，以將該晶圓分割成一個個的器件晶片；以及 拾取步驟，在該聚烯烴系片材之對應於各器件晶片的一個個的區域中，將該聚烯烴系片材加熱，並從該聚烯烴系片材側將該器件晶片頂推，而從該聚烯烴系片材拾取該器件晶片。
較佳的是，在該一體化步驟中，藉由紅外線的照射而實施該熱壓接。
又，較佳的是，在該一體化步驟中，在實施一體化後，將從該框架之外周超出的聚烯烴系片材去除。
又，較佳的是，在該拾取步驟中，是將該聚烯烴系片材擴張，以將各器件晶片間的間隔擴大。
又，較佳的是，該聚烯烴系片材是聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一種。
進而，較佳的是，在該一體化步驟中，在該聚烯烴系片材為該聚乙烯片材的情況下，加熱溫度為120℃~140℃，在該聚烯烴系片材為該聚丙烯片材的情況下，加熱溫度為160℃~180℃，在該聚烯烴系片材為該聚苯乙烯片材的情況下，加熱溫度為220℃~240℃。
又，較佳的是，該晶圓是以矽(Si)、氮化鎵(GaN)、砷化鎵(GaAs)、玻璃之任一種所構成。 發明效果
在本發明之一態樣的晶圓的加工方法中，是在形成框架單元時，不使用具有糊層的黏著膠帶，而是使用未具備糊層的聚烯烴系片材來將框架及晶圓一體化。透過聚烯烴系片材來使框架及晶圓一體化的一體化步驟，是藉由熱壓接來實現。
實施一體化步驟後，是藉由切割刀片來切割晶圓，以將晶圓分割成一個個的器件晶片。之後，在聚烯烴系片材之對應於各器件晶片的一個個的區域中，將該聚烯烴系片材加熱，並從該聚烯烴系片材側將該器件晶片頂推，而從該聚烯烴系片材拾取器件晶片。所拾取的器件晶片是各自組裝到規定的組裝對象。再者，在拾取時，當將聚烯烴系片材加熱時，可以讓聚烯烴系片材的剝離變得較容易而減輕施加於器件晶片的負荷。
在切割晶圓時，因為切割刀片也切入晶圓之下的聚烯烴系片材，所以會產生來自聚烯烴系片材的切割屑。但是，因為聚烯烴系片材並未具備糊層，所以即使該切割屑被攝入切割水並在晶圓的正面上擴散，該切割屑也不會附著在晶圓，而可更加確實地經過之後的洗淨步驟等來去除。
也就是，根據本發明之一態樣，變得可藉由熱壓接進行使用了不具備糊層的聚烯烴系片材的框架單元的形成，且可在晶圓的切割時不產生黏著力高的切割屑的情形下，抑制由該切割屑所造成之器件晶片的品質降低。
從而，根據本發明之一態樣，可提供一種晶圓的加工方法，其可使切割屑不附著在器件的正面，且抑制器件晶片之品質的降低。
用以實施發明之形態 參照附加圖式，說明本發明的一個態樣之實施形態。首先，說明以本實施形態的加工方法所加工之晶圓。圖1是示意地顯示晶圓1的立體圖。晶圓1是例如由Si(矽)、SiC(碳化矽)、GaN(氮化鎵)、GaAs(砷化鎵)、或者是其他之半導體等的材料、又或是藍寶石、玻璃、石英等的材料所構成之大致圓板狀的基板等。
晶圓1的正面1a是以格子狀地配置排列之複數條分割預定線3所區劃。又，在晶圓1之正面1a之以分割預定線3所區劃出的各區域中，形成有IC(積體電路，Integrated Circuit)或LED(發光二極體，Light Emitting Diode)等的器件5。在本實施形態之晶圓1的加工方法中，是藉由將晶圓1沿著分割預定線3切割來分割，以形成一個個的器件晶片。
晶圓1是以切割裝置來進行切割。在將晶圓1搬入該切割裝置前，將晶圓1、聚烯烴系片材及框架一體化而形成框架單元。晶圓1是以框架單元的狀態來搬入切割裝置，並進行切割。所形成之一個個的器件晶片是被聚烯烴系片材所支撐。之後，藉由將聚烯烴系片材擴張，以使器件晶片間的間隔擴大，並藉由拾取裝置來拾取器件晶片。
環狀的框架7(參照圖2等)是以例如金屬等之材料所形成，並且具備直徑比晶圓1的直徑更大的開口7a。在形成框架單元時，是將晶圓1定位在框架7的開口7a內，而容置在開口7a。
聚烯烴系片材9(參照圖3等)是具有柔軟性的樹脂系片材，且正背面為平坦。並且具有比框架7的外徑更大的直徑，且不具備糊層。聚烯烴系片材9是將烯烴(alkene)作為單體所合成之聚合物的片材，可為例如聚乙烯片材、聚丙烯片材或聚苯乙烯片材等之對可見光為透明或者半透明的片材。但是，聚烯烴系片材9並非限定於此，亦可為不透明的。
因為聚烯烴系片材9不具備黏著性，所以在室溫下無法貼附在晶圓1及框架7。但是，因為聚烯烴系片材9具有熱可塑性，所以若一邊施加規定的壓力一邊在已使其與晶圓1及框架7接合的狀態下加熱至熔點附近的溫度時，會部分地熔融而可以接著於晶圓1及框架7。於是，在本實施形態之晶圓1的加工方法中，是藉由如以上的熱壓接，將晶圓1、框架7及聚烯烴系片材9一體化來形成框架單元。
接著，說明本實施形態之晶圓1的加工方法的各步驟。首先，是為了使晶圓1、聚烯烴系片材9及框架7一體化的準備，而實施聚烯烴系片材配設步驟。圖2是示意地顯示將晶圓1及框架7定位在工作夾台2的保持面2a上之情形的立體圖。如圖2所示，聚烯烴系片材配設步驟是在上部具備保持面2a的工作夾台2上實施。
工作夾台2於上部中央具備直徑比框架7的外徑更大的多孔質構件。該多孔質構件的上表面是成為工作夾台2的保持面2a。工作夾台2是如圖3所示地於內部具有一端通到該多孔質構件的排氣路，且於該排氣路的另一端側配設吸引源2b。於排氣路上配設有切換連通狀態及切斷狀態的切換部2c，當切換部2c為連通狀態時，會使藉由吸引源2b對放置於保持面2a的被保持物所產生的負壓作用，而將被保持物吸引保持在工作夾台2。
在聚烯烴系片材配設步驟中，首先，是如圖2所示，將晶圓1及框架7載置於工作夾台2的保持面2a上。此時，將晶圓1的正面1a側朝向下方，並且將晶圓1定位在框架7的開口7a內。接著，在晶圓1的背面1b及框架7的外周配設聚烯烴系片材9。圖3是示意地顯示聚烯烴系片材配設步驟的立體圖。如圖3所示，以覆蓋晶圓1及框架7的方式，來將聚烯烴系片材9配設在兩者之上。
再者，在聚烯烴系片材配設步驟中，是使用直徑比工作夾台2的保持面2a更大的聚烯烴系片材9。這是因為在之後所實施的一體化步驟中使由工作夾台2所形成的負壓作用在聚烯烴系片材9時，若未將保持面2a的整體以聚烯烴系片材9來覆蓋的話，會導致負壓從間隙漏出，而無法適當地對聚烯烴系片材9施加壓力的緣故。
在本實施形態之晶圓1的加工方法中，接著是實施一體化步驟，前述一體化步驟是將聚烯烴系片材9加熱，並藉由熱壓接來將晶圓1及該框架7透過聚烯烴系片材9而一體化。圖4是示意地顯示一體化步驟之一例的立體圖。在圖4中，是將可以通過相對於可見光為透明或者半透明之聚烯烴系片材9來目視辨識的構成以虛線表示。
在一體化步驟中，首先，是使工作夾台2的切換部2c作動來設為連通狀態，以將吸引源2b連接於工作夾台2之上部的多孔質構件，並使由吸引源2b所形成的負壓作用於聚烯烴系片材9。如此一來，即藉由大氣壓來使聚烯烴系片材9相對於晶圓1及框架7密合。
接著，一邊藉由吸引源2b吸引聚烯烴系片材9，一邊將聚烯烴系片材9加熱來實施熱壓接。聚烯烴系片材9的加熱是如例如圖4所示，藉由配設在工作夾台2之上方的熱風槍4來實施。
熱風槍4是在內部具備電熱線等的加熱組件及風扇等的送風機構，且可以將空氣加熱並噴射。當一邊使負壓作用在聚烯烴系片材9，一邊藉由熱風槍4從上面對聚烯烴系片材9供給熱風4a，而將聚烯烴系片材9加熱至規定的溫度時，可將聚烯烴系片材9熱壓接於晶圓1及框架7。
又，聚烯烴系片材9的加熱亦可藉由其他方法來實施，例如可藉由從上方以加熱至規定的溫度的構件來按壓晶圓1及框架7來實施。圖5是示意地顯示一體化步驟的另一例的立體圖。在圖5中，是將可以通過相對於可見光為透明或者半透明之聚烯烴系片材9來目視辨識的構成以虛線表示。
在圖5所示之一體化步驟中，是使用例如在內部具備熱源的加熱滾輪6。在圖5所示之一體化步驟中，也是首先使藉由吸引源2b所形成的負壓作用在聚烯烴系片材9，並藉由大氣壓來使聚烯烴系片材9密合於晶圓1及框架7。
之後，將加熱滾輪6加熱至規定的溫度，並將該加熱滾輪6載置於工作夾台2的保持面2a的一端。然後，使加熱滾輪6旋轉，並讓加熱滾輪6在工作夾台2上從該一端滾動至另一端。如此一來，可將聚烯烴系片材9熱壓接於晶圓1及框架7。此時，當藉由加熱滾輪6朝將聚烯烴系片材9往下壓的方向施加力時，會以比大氣壓更大的壓力實施熱壓接。再者，較佳的是，將加熱滾輪6的表面以氟樹脂被覆。
又，亦可使用在內部具備熱源且具有平坦之底板的熨斗狀的按壓構件來取代加熱滾輪6，並實施聚烯烴系片材9的熱壓接。在此情況下，將該按壓構件加熱至規定的溫度來作為熱板，並從上方以該按壓構件按壓保持在工作夾台2的聚烯烴系片材9。
聚烯烴系片材9的加熱亦可進一步藉由其他的方法來實施。圖6是示意地顯示一體化步驟的又另一例的立體圖。在圖6中，是將可以通過相對於可見光為透明或者半透明之聚烯烴系片材9來目視辨識的構成以虛線表示。在圖6所示之一體化步驟中，是使用配設在工作夾台2的上方的紅外線燈8來加熱聚烯烴系片材9。紅外線燈8可照射至少聚烯烴系片材9之材料具有吸收性之波長的紅外線8a。
在圖6所示之一體化步驟中，也是首先使藉由吸引源2b所形成的負壓作用在聚烯烴系片材9，而使聚烯烴系片材9密合於晶圓1及框架7。接著，使紅外線燈8作動，以對聚烯烴系片材9照射紅外線8a來加熱聚烯烴系片材9。如此一來，可將聚烯烴系片材9熱壓接於晶圓1及框架7。
當藉由任一種方法來將聚烯烴系片材9加熱至其熔點附近的溫度時，即可將聚烯烴系片材9熱壓接於晶圓1及框架7。將聚烯烴系片材9熱壓接之後，是使切換部2c作動，並將工作夾台2的多孔質構件從吸引源2b斷開，而解除由工作夾台2所進行的吸附。
接著，將從框架7之外周超出的聚烯烴系片材9切斷並去除。圖7(A)是示意地顯示將聚烯烴系片材9切斷之情形的立體圖。切斷是如圖7(A)所示，使用圓環狀的刀具(cutter)10。該刀具10具備貫通孔，且可繞著貫穿於該貫通孔的旋轉軸旋轉。
首先，將圓環狀的刀具10定位在框架7的上方。此時，將刀具10的旋轉軸對齊於工作夾台2的徑方向。接著，使刀具10下降，並以框架7及刀具10將聚烯烴系片材9夾入，而將聚烯烴系片材9切斷。如此一來，可在聚烯烴系片材9形成切斷痕跡9a。
進而，使刀具10沿著框架7於框架7的開口7a的周圍繞行一圈，而藉由切斷痕跡9a包圍聚烯烴系片材9之規定的區域。然後，以留下聚烯烴系片材9之該區域的方式，將切斷痕跡9a之外周側的區域的聚烯烴系片材9去除。如此一來，可以將包含從框架7之外周超出之區域且為聚烯烴系片材9之不要的部分去除。
再者，在聚烯烴系片材的切斷上，亦可使用超音波刀具，並將以超音波頻帶之頻率來使上述之圓環狀的刀具10振動的振動源連接於該刀具10。又，在切斷聚烯烴系片材9時，亦可為了容易地切斷，而將該聚烯烴系片材9冷卻來使其硬化。藉由以上，可形成將晶圓1及框架7透過聚烯烴系片材9而一體化的框架單元11。圖7(B)是示意地顯示所形成的框架單元11的立體圖。
再者，在實施熱壓接時，宜將聚烯烴系片材9加熱至其熔點以下的溫度。這是因為若加熱溫度超過熔點時，會有下述情形的緣故：聚烯烴系片材9熔化而變得無法維持片材的形狀。又，較佳的是，將聚烯烴系片材9加熱至其軟化點以上的溫度。這是因為若加熱溫度未達到軟化點的話，會無法適當地實施熱壓接。也就是，較佳的是，將聚烯烴系片材9加熱至其軟化點以上且其熔點以下的溫度。
進而，也有下述情況：一部分的聚烯烴系片材9不具有明確的軟化點。於是，在實施熱壓接時，宜將聚烯烴系片材9加熱至比其熔點低20℃的溫度以上且其熔點以下的溫度。
又，例如在聚烯烴系片材9為聚乙烯片材的情況下，將加熱溫度設為120℃~140℃。又，在該聚烯烴系片材9為聚丙烯片材的情況下，將加熱溫度設為160℃~180℃。進而，在聚烯烴系片材9為聚苯乙烯片材的情況下，將加熱溫度設為220℃~240℃。
在此，加熱溫度是指在實施一體化步驟時之聚烯烴系片材9的溫度。雖然在例如熱風槍4、加熱滾輪6及紅外線燈8等的熱源上是將可以設定輸出溫度的機種提供於實用，但即便使用該熱源來加熱聚烯烴系片材9，也會有下述情況：聚烯烴系片材9的溫度並未到達所設定之該輸出溫度。於是，亦可為了將聚烯烴系片材9加熱至規定的溫度，而將熱源的輸出溫度設定得比聚烯烴系片材9的熔點更高。
接著，在本實施形態之晶圓1的加工方法中，實施以切割刀片將已成為框架單元11之狀態的晶圓1切割來分割的分割步驟。分割步驟是例如以圖8所示之切割裝置來實施。圖8是示意地顯示分割步驟的立體圖。
切割裝置12具備切割被加工物的切割單元14及保持被加工物的工作夾台(圖未示)。切割單元14具備切割刀片18及主軸(圖未示)，前述切割刀片18具備圓環狀的磨石部，前述主軸是將前端側貫穿於該切割刀片18的中央的貫通孔且使切割刀片18旋轉。切割刀片18具備例如於中央具備該貫通孔之環狀基台、及配設在該環狀基台的外周部的環狀的磨石部。
該主軸的基端側是連接於已容置在主軸殼體16之內部的主軸馬達(圖未示)，且當使主軸馬達作動時可以使切割刀片18旋轉。
當藉由切割刀片18切割被加工物時，會因切割刀片18及被加工物的摩擦而產生熱。又，當切割被加工物時，會從被加工物產生切割屑。於是，為了將因切割所產生的熱及切割屑去除，在切割被加工物之期間，可對切割刀片18及被加工物供給純水等的切割水。切割單元14是例如在切割刀片18之側邊具備對切割刀片18等供給切割水的切割水供給噴嘴20。
在切割晶圓1時，是將框架單元11載置於工作夾台之上，並且隔著聚烯烴系片材9使晶圓1保持在工作夾台。然後，使工作夾台旋轉，並將晶圓1的分割預定線3對齊於切割裝置12的加工進給方向。又，將工作夾台及切割單元14的相對位置調整成將切割刀片18配設在分割預定線3之延長線的上方。
接著，藉由使主軸旋轉來使切割刀片18旋轉。然後，使切割單元14下降至規定的高度位置，並且使工作夾台與切割單元14沿著平行於工作夾台的上表面的方向來相對移動。如此一來，旋轉的切割刀片18的磨石部接觸於晶圓1而切割晶圓1，並在晶圓1及聚烯烴系片材9形成沿著分割預定線3的切割痕跡3a。
在沿著一條分割預定線3實施切割後，使工作夾台及切割單元14朝與加工進給方向垂直的分度進給方向移動，而沿著其他的分割預定線3同樣地實施晶圓1的切割。在沿著一個方向之全部的分割預定線3均實施切割後，使工作夾台繞著垂直於保持面的軸旋轉，並同樣地於沿著其他的方向的分割預定線3上沿著來切割晶圓1。當沿著晶圓1之全部的分割預定線3切割晶圓1時，分割步驟即完成。
切割裝置12亦可在切割單元14的附近具備洗淨單元(圖未示)。亦可將藉由切割單元14所切割的晶圓1搬送至該洗淨單元，並藉由該洗淨單元來洗淨。例如洗淨單元具備保持框架單元11的洗淨工作台、以及可以在框架單元11的上方往返移動的洗淨水供給噴嘴。
當一邊使洗淨工作台繞著垂直於保持面的軸旋轉，並從洗淨水供給噴嘴將純水等的洗淨液供給到晶圓1，一邊使洗淨水供給噴嘴在通過該保持面之中央的上方的路徑上往返移動時，可以將晶圓1的正面1a側洗淨。
當實施分割步驟時，可將晶圓1分割成一個個的器件晶片。所形成的器件晶片是被聚烯烴系片材9所支撐。在切割晶圓1時，為了確實地將晶圓1分割，是以讓切割刀片18之下端的高度位置成為比晶圓1的背面1b更低的高度位置的方式，來將切割單元14定位在規定的高度。因此，當切割晶圓1時，聚烯烴系片材9也會被切割，並產生來自於聚烯烴系片材9的切割屑。
在框架單元11中使用黏著膠帶而非聚烯烴系片材9的情況下，會產生來自黏著膠帶之糊層的切割屑。在此情況下，會將該切割屑攝入從切割水供給噴嘴20所噴射的切割水中，並在晶圓1的正面1a上擴散。來自糊層的切割屑除了易於再附著在器件5的正面以外，要以切割後所實施之晶圓1的洗淨步驟等來去除也並非容易。當來自糊層的切割屑附著時，所形成之器件晶片的品質的降低即成為問題。
相對於此，在本實施形態之晶圓1的加工方法中，在框架單元11使用不具備糊層的聚烯烴系片材9，而非具備有糊層的黏著膠帶。即使產生來自聚烯烴系片材9的切割屑，且被攝入切割水而在晶圓的正面上擴散，該切割屑也不會附著在晶圓1，而可更加確實地在之後的洗淨步驟等中去除。從而，可抑制由該切割屑所造成的器件晶片的品質降低。
在本實施形態之晶圓1的加工方法中，接著，是實施從聚烯烴系片材9拾取一個個的該器件晶片的拾取步驟。在拾取步驟中，是使用圖9下部所示的拾取裝置22。圖9是示意地顯示框架單元11往拾取裝置22之搬入的立體圖。
拾取裝置22具備圓筒狀的滾筒24及框架保持單元26，前述滾筒24具有比晶圓1的直徑更大的直徑，前述框架保持單元26包含框架支撐台30。框架保持單元26的框架支撐台30具備直徑比該滾筒24的直徑更大的開口，且是配設在與該滾筒24的上端部同樣的高度，而從外周側包圍該滾筒24的上端部。
在框架支撐台30的外周側配設有夾具28。當將框架單元11載置於框架支撐台30之上，且藉由夾具28把持框架單元11的框架7時，即可將框架單元11固定在框架支撐台30。
框架支撐台30是被沿著鉛直方向伸長的複數支桿件32所支撐，在各桿件32的下端部配設有使該桿件32升降的汽缸34。複數個汽缸34是支撐在圓板狀的基座36。當使各汽缸34作動時，可將框架支撐台30相對於滾筒24下拉。
在滾筒24的內部配設有頂推機構38，前述頂推機構38是從下方將支撐在聚烯烴系片材9的器件晶片頂推。頂推機構38於上端具備加熱部38a，且前述加熱部38a內含帕耳帖(Peltier)元件、電熱線等之熱源。又，在滾筒24的上方配設有可以吸引保持器件晶片的夾頭40(參照圖10(B))。頂推機構38及夾頭40可在沿著框架支撐台30之上表面的水平方向上移動。又，夾頭40是透過切換部40b(參照圖10(B))而連接於吸引源40a(參照圖10(B))。
在拾取步驟中，首先是使汽缸34作動來調節框架支撐台30的高度，以使拾取裝置22的滾筒24之上端的高度，與框架支撐台30之上表面的高度一致。接著，將從切割裝置12搬出的框架單元11載置於拾取裝置22的滾筒24及框架支撐台30之上。
之後，藉由夾具28將框架單元11的框架7固定在框架支撐台30之上。圖10(A)是示意地顯示已固定於框架支撐台30之上的框架單元11的截面圖。於晶圓1上是藉由分割步驟形成切割痕跡3a而進行分割。
接著，使汽缸34作動，以將框架保持單元26的框架支撐台30相對於滾筒24下拉。如此一來，如圖10(B)所示，可朝外周方向擴張聚烯烴系片材9。圖10(B)是示意地顯示拾取步驟的截面圖。
當朝外周方向擴張聚烯烴系片材9時，會將支撐在聚烯烴系片材9之各器件晶片1c的間隔擴大。如此一來，器件晶片1c彼此變得難以接觸，且一個個的器件晶片1c的拾取變得較容易。然後，決定成為拾取之對象的器件晶片1c，並且使頂推機構38移動至該器件晶片1c的下方，且使夾頭40移動至該器件晶片1c的上方。
之後，使加熱部38a作動以使溫度上升，使加熱部38a接觸於聚烯烴系片材9之對應於該器件晶片1c的區域來加熱該區域。進而，藉由使頂推機構38作動，而從聚烯烴系片材9側將該器件晶片1c頂推。然後，使切換部40b作動並使夾頭40連通於吸引源40a。如此一來，可藉由夾頭40吸引保持該器件晶片1c，而從聚烯烴系片材9拾取器件晶片1c。所拾取的一個個的器件晶片1c是在之後組裝到規定的配線基板等來使用。
再者，於藉由加熱部38a加熱聚烯烴系片材9的該區域時，是例如將該區域加熱至聚烯烴系片材9的熔點附近的溫度。因為聚烯烴系片材9在熔點附近的溫度之期間會降低附著力，所以可將從聚烯烴系片材9的剝離時施加於器件晶片的負荷減輕。
如以上所說明的，根據本實施形態之晶圓的加工方法，可以在不使用黏著膠帶的情形下，形成包含晶圓1的框架單元11。因此，即使切割晶圓1，也不會產生來自黏著膠帶之糊層的切割屑，且也不會有該切割屑附著在器件晶片1c之情形。因此，不會有使器件晶片1c的品質降低之情形。
再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如在上述實施形態中，雖然說明了聚烯烴系片材9可為例如聚乙烯片材、聚丙烯片材或聚苯乙烯片材的情況，但本發明之一態樣並不限定於此。例如，聚烯烴系片材亦可使用其他材料，亦可是丙烯及乙烯的共聚物、或者是烯烴系彈性體等。
另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍內，均可適當變更而實施。
1‧‧‧晶圓 1a‧‧‧正面 1b‧‧‧背面 1c‧‧‧器件晶片 2‧‧‧工作夾台 2a‧‧‧保持面 2b、40a‧‧‧吸引源 2c、40b‧‧‧切換部 3‧‧‧分割預定線 3a‧‧‧切割痕跡 4‧‧‧熱風槍 4a‧‧‧熱風 5‧‧‧器件 6‧‧‧加熱滾輪 7‧‧‧框架 7a‧‧‧開口 8‧‧‧紅外線燈 8a‧‧‧紅外線 9‧‧‧聚烯烴系片材 9a‧‧‧切斷痕跡 10‧‧‧刀具 11‧‧‧框架單元 12‧‧‧切割裝置 14‧‧‧切割單元 16‧‧‧主軸殼體 18‧‧‧切割刀片 20‧‧‧切割水供給噴嘴 22‧‧‧拾取裝置 24‧‧‧滾筒 26‧‧‧框架保持單元 28‧‧‧夾具 30‧‧‧框架支撐台 32‧‧‧桿件 34‧‧‧汽缸 36‧‧‧基座 38‧‧‧頂推機構 38a‧‧‧加熱部 40‧‧‧夾頭
圖1是示意地顯示晶圓的立體圖。 圖2是示意地顯示將晶圓及框架定位在工作夾台的保持面上之情形的立體圖。 圖3是示意地顯示聚烯烴系片材配設步驟的立體圖。 圖4是示意地顯示一體化步驟之一例的立體圖。 圖5是示意地顯示一體化步驟之一例的立體圖。 圖6是示意地顯示一體化步驟之一例的立體圖。 圖7(A)是示意地顯示將聚烯烴系片材切斷之情形的立體圖，圖7(B)是示意地顯示所形成的框架單元的立體圖。 圖8是示意地顯示分割步驟的立體圖。 圖9是示意地顯示框架單元往拾取裝置之搬入的立體圖。 圖10(A)是示意地顯示已固定在框架支撐台之上的框架單元的截面圖，圖10(B)是示意地顯示拾取步驟的截面圖。
1‧‧‧晶圓
1b‧‧‧背面
2‧‧‧工作夾台
2a‧‧‧保持面
2b‧‧‧吸引源
2c‧‧‧切換部
4‧‧‧熱風槍
4a‧‧‧熱風
7‧‧‧框架
7a‧‧‧開口
9‧‧‧聚烯烴系片材

Claims (9)

  1. 一種晶圓的加工方法，讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片，前述晶圓的加工方法之特徵在於具備：聚烯烴系片材配設步驟，將晶圓定位在具有容置晶圓之開口的框架的該開口內，並將不具備糊層之聚烯烴系片材配設在該晶圓的背面及該框架的外周；一體化步驟，將該聚烯烴系片材加熱而藉由熱壓接來將該晶圓及該框架透過該聚烯烴系片材而一體化；分割步驟，使用可旋轉地具備有切割刀片的切割裝置來沿著分割預定線切割該晶圓，以將該晶圓分割成一個個的器件晶片；以及拾取步驟，在該聚烯烴系片材之對應於各器件晶片的一個個的區域中，將該聚烯烴系片材加熱，並從該聚烯烴系片材側將該器件晶片頂推，而從該聚烯烴系片材拾取該器件晶片。
  2. 如請求項1之晶圓的加工方法，其中在該一體化步驟中，藉由紅外線的照射而實施該熱壓接。
  3. 如請求項1之晶圓的加工方法，其中在該一體化步驟中，在實施一體化後，將從該框架之外周超出的聚烯烴系片材去除。
  4. 如請求項1之晶圓的加工方法，其中在該拾取步驟中，是將該聚烯烴系片材擴張，以將各器件晶片間的間隔擴大。
  5. 如請求項1之晶圓的加工方法，其中該聚烯烴系片材是聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一種。
  6. 如請求項5之晶圓的加工方法，其中在該一體化步驟中，在該聚烯烴系片材為該聚乙烯片材的情況下，加熱溫度為120℃~140℃，在該聚烯烴系片材為該聚丙烯片材的情況下，加熱溫 度為160℃~180℃，在該聚烯烴系片材為該聚苯乙烯片材的情況下，加熱溫度為220℃~240℃。
  7. 如請求項1之晶圓的加工方法，其中該晶圓是以矽、氮化鎵、砷化鎵、玻璃之任一種所構成。
  8. 如請求項1之晶圓的加工方法，其中在該一體化步驟中，是使熱風碰觸該聚烯烴系片材來加熱該聚烯烴系片材，以實施該熱壓接。
  9. 如請求項1之晶圓的加工方法，其中在該一體化步驟中，是以滾輪按壓該聚烯烴系片材，以實施該熱壓接。
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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP7208177B2 (ja) * 2020-01-24 2023-01-18 株式会社藤商事 遊技機
JP2020073064A (ja) * 2020-02-04 2020-05-14 株式会社藤商事 遊技機
JP2023019193A (ja) * 2021-07-28 2023-02-09 株式会社ディスコ 被加工物の加工方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890836B2 (en) * 2003-05-23 2005-05-10 Texas Instruments Incorporated Scribe street width reduction by deep trench and shallow saw cut
TW201539685A (zh) * 2014-02-13 2015-10-16 Lintec Corp 可延伸片材以及積層晶片之製造方法
US9786541B2 (en) * 2011-09-30 2017-10-10 Lintec Corporation Dicing sheet with protective film forming layer and chip fabrication method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3076179B2 (ja) 1993-07-26 2000-08-14 株式会社ディスコ ダイシング装置
JP3076179U (ja) 2000-09-07 2001-03-30 和雄 落合 コップ型ボトルキャップ
JP4780828B2 (ja) 2000-11-22 2011-09-28 三井化学株式会社 ウエハ加工用粘着テープ及びその製造方法並びに使用方法
JP2003152056A (ja) 2001-11-08 2003-05-23 Sony Corp 半導体素子保持具及びその製造方法
JP2003264203A (ja) 2002-03-11 2003-09-19 Hitachi Ltd 半導体装置の製造方法
JP4841866B2 (ja) * 2005-06-01 2011-12-21 リンテック株式会社 接着シート
JP4930679B2 (ja) 2005-12-14 2012-05-16 日本ゼオン株式会社 半導体素子の製造方法
KR20080014317A (ko) 2006-08-10 2008-02-14 삼성전자주식회사 표시 장치
JP2009193825A (ja) 2008-02-14 2009-08-27 Toyota Central R&D Labs Inc 複合電解質膜及びその製造方法
JP5511441B2 (ja) 2010-03-05 2014-06-04 リンテック株式会社 シート貼付装置およびシート貼付方法
US8975161B2 (en) * 2010-07-13 2015-03-10 Hitachi Chemical Company, Ltd. Dicing/die bonding integral film, dicing/die bonding integral film manufacturing method, and semiconductor chip manufacturing method
JP5496167B2 (ja) 2010-11-12 2014-05-21 株式会社東京精密 半導体ウェハの分割方法及び分割装置
JP5916295B2 (ja) 2011-04-22 2016-05-11 古河電気工業株式会社 ウエハ加工用テープおよびウエハ加工用テープを用いて半導体装置を製造する方法
US9230888B2 (en) 2013-02-11 2016-01-05 Henkel IP & Holding GmbH Wafer back side coating as dicing tape adhesive
JP6425435B2 (ja) 2014-07-01 2018-11-21 株式会社ディスコ チップ間隔維持装置
JP2016063060A (ja) 2014-09-18 2016-04-25 株式会社ディスコ ウエーハの加工方法
JP7281873B2 (ja) * 2018-05-14 2023-05-26 株式会社ディスコ ウェーハの加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890836B2 (en) * 2003-05-23 2005-05-10 Texas Instruments Incorporated Scribe street width reduction by deep trench and shallow saw cut
US9786541B2 (en) * 2011-09-30 2017-10-10 Lintec Corporation Dicing sheet with protective film forming layer and chip fabrication method
TW201539685A (zh) * 2014-02-13 2015-10-16 Lintec Corp 可延伸片材以及積層晶片之製造方法

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