TWI795547B - 矽晶圓的洗淨方法 - Google Patents

矽晶圓的洗淨方法 Download PDF

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Publication number
TWI795547B
TWI795547B TW108111633A TW108111633A TWI795547B TW I795547 B TWI795547 B TW I795547B TW 108111633 A TW108111633 A TW 108111633A TW 108111633 A TW108111633 A TW 108111633A TW I795547 B TWI795547 B TW I795547B
Authority
TW
Taiwan
Prior art keywords
cleaning
silicon wafer
oxide film
chemical oxide
dsod
Prior art date
Application number
TW108111633A
Other languages
English (en)
Chinese (zh)
Other versions
TW202004885A (zh
Inventor
阿部達夫
五十嵐健作
大關正彬
Original Assignee
日商信越半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商信越半導體股份有限公司 filed Critical 日商信越半導體股份有限公司
Publication of TW202004885A publication Critical patent/TW202004885A/zh
Application granted granted Critical
Publication of TWI795547B publication Critical patent/TWI795547B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108111633A 2018-05-29 2019-04-02 矽晶圓的洗淨方法 TWI795547B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2018-101949 2018-05-29
JP2018101949A JP6729632B2 (ja) 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法

Publications (2)

Publication Number Publication Date
TW202004885A TW202004885A (zh) 2020-01-16
TWI795547B true TWI795547B (zh) 2023-03-11

Family

ID=68698054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108111633A TWI795547B (zh) 2018-05-29 2019-04-02 矽晶圓的洗淨方法

Country Status (5)

Country Link
JP (1) JP6729632B2 (https=)
KR (1) KR20210015762A (https=)
CN (1) CN112204712A (https=)
TW (1) TWI795547B (https=)
WO (1) WO2019230164A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI865651B (zh) 2019-11-18 2024-12-11 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
JP7480738B2 (ja) * 2021-04-13 2024-05-10 信越半導体株式会社 シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法
JP2023048696A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020164887A1 (en) * 1998-10-16 2002-11-07 Kabushiki Kaisha Toshiba Etching method and etching apparatus, method for manufacturing semiconductor device, and semiconductor device
US20090095321A1 (en) * 2007-10-10 2009-04-16 Siltron Inc. Method for cleaning silicon wafer
TW201351498A (zh) * 2012-06-01 2013-12-16 信越半導體股份有限公司 半導體晶圓的洗淨方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2832171B2 (ja) 1995-04-28 1998-12-02 信越半導体株式会社 半導体基板の洗浄装置および洗浄方法
JP3489329B2 (ja) 1996-03-19 2004-01-19 信越半導体株式会社 シリコンウエーハ表面の処理方法
JP3538114B2 (ja) * 1999-09-30 2004-06-14 野村マイクロ・サイエンス株式会社 表面付着汚染物質の除去方法及び除去装置
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP4292872B2 (ja) * 2003-05-29 2009-07-08 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP2006208314A (ja) 2005-01-31 2006-08-10 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの結晶欠陥の評価方法
JP4933071B2 (ja) * 2005-09-08 2012-05-16 コバレントマテリアル株式会社 シリコンウエハの洗浄方法
KR100841994B1 (ko) * 2006-12-20 2008-06-27 주식회사 실트론 실리콘 웨이퍼의 산화막 제조 방법
KR20110036990A (ko) * 2009-10-05 2011-04-13 주식회사 엘지실트론 균일 산화막 형성 방법 및 세정 방법
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020164887A1 (en) * 1998-10-16 2002-11-07 Kabushiki Kaisha Toshiba Etching method and etching apparatus, method for manufacturing semiconductor device, and semiconductor device
US20090095321A1 (en) * 2007-10-10 2009-04-16 Siltron Inc. Method for cleaning silicon wafer
TW201351498A (zh) * 2012-06-01 2013-12-16 信越半導體股份有限公司 半導體晶圓的洗淨方法

Also Published As

Publication number Publication date
JP2019207923A (ja) 2019-12-05
JP6729632B2 (ja) 2020-07-22
TW202004885A (zh) 2020-01-16
CN112204712A (zh) 2021-01-08
WO2019230164A1 (ja) 2019-12-05
KR20210015762A (ko) 2021-02-10

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