TWI780291B - 具有傾斜週期性結構之度量衡目標及方法 - Google Patents

具有傾斜週期性結構之度量衡目標及方法 Download PDF

Info

Publication number
TWI780291B
TWI780291B TW108100629A TW108100629A TWI780291B TW I780291 B TWI780291 B TW I780291B TW 108100629 A TW108100629 A TW 108100629A TW 108100629 A TW108100629 A TW 108100629A TW I780291 B TWI780291 B TW I780291B
Authority
TW
Taiwan
Prior art keywords
periodic
periodic structures
metrology
structures
target
Prior art date
Application number
TW108100629A
Other languages
English (en)
Chinese (zh)
Other versions
TW201939171A (zh
Inventor
亞爾 飛勒
馬克 吉諾克
亞歷山卓 史畢札
維拉得摩 朗維司基
夏皮爾 伊納 塔許沙
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201939171A publication Critical patent/TW201939171A/zh
Application granted granted Critical
Publication of TWI780291B publication Critical patent/TWI780291B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW108100629A 2018-01-12 2019-01-08 具有傾斜週期性結構之度量衡目標及方法 TWI780291B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862617086P 2018-01-12 2018-01-12
US62/617,086 2018-01-12
WOPCT/US18/62931 2018-11-29
PCT/US2018/062931 WO2019139685A1 (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Publications (2)

Publication Number Publication Date
TW201939171A TW201939171A (zh) 2019-10-01
TWI780291B true TWI780291B (zh) 2022-10-11

Family

ID=67218346

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108100629A TWI780291B (zh) 2018-01-12 2019-01-08 具有傾斜週期性結構之度量衡目標及方法

Country Status (7)

Country Link
US (1) US11137692B2 (https=)
JP (2) JP2021511532A (https=)
KR (1) KR102408316B1 (https=)
CN (1) CN111542784B (https=)
SG (1) SG11201913459RA (https=)
TW (1) TWI780291B (https=)
WO (1) WO2019139685A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US11256177B2 (en) * 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
WO2021054928A1 (en) * 2019-09-16 2021-03-25 Kla Corporation Periodic semiconductor device misregistration metrology system and method
CN112731778B (zh) * 2019-10-28 2022-08-02 长鑫存储技术有限公司 一种半导体套刻精度的控制方法及叠层标记
DE102019220174B4 (de) 2019-12-19 2026-03-12 Carl Zeiss Industrielle Messtechnik Gmbh Verfahren und Vorrichtung zur Bestimmung eines Drehwinkels einer Drehachse
KR102857305B1 (ko) * 2020-02-07 2025-09-08 케이엘에이 코포레이션 반도체 디바이스의 오정합 측정에서의 비직교 타겟 및 이를 사용하기 위한 방법
CN113539867A (zh) * 2020-04-14 2021-10-22 中国科学院微电子研究所 半导体器件套刻精度的测量方法
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
CN111508932B (zh) * 2020-04-27 2021-12-14 深圳中科飞测科技股份有限公司 套刻标记及套刻误差的测量方法
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
WO2022253526A1 (en) * 2021-05-31 2022-12-08 Asml Netherlands B.V. Metrology measurement method and apparatus
EP4137889A1 (en) * 2021-08-20 2023-02-22 ASML Netherlands B.V. Metrology measurement method and apparatus
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
WO2023066657A1 (en) * 2021-10-19 2023-04-27 Asml Netherlands B.V. Pattern matching method
US12242202B2 (en) 2022-01-04 2025-03-04 Nanya Technology Corporation Method for overlay error correction
US20230213872A1 (en) * 2022-01-04 2023-07-06 Nanya Technology Corporation Mark for overlay measurement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070081170A1 (en) * 2002-07-03 2007-04-12 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US20090291513A1 (en) * 2000-08-30 2009-11-26 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284922A (ja) * 1985-06-10 1986-12-15 Nippon Kogaku Kk <Nikon> 回折格子を備えた基板及び該基板の位置検出装置
JPH0547634A (ja) * 1991-08-13 1993-02-26 Nikon Corp 位置検出装置
JP2870461B2 (ja) * 1995-12-18 1999-03-17 日本電気株式会社 フォトマスクの目合わせマーク及び半導体装置
JP2000012445A (ja) * 1998-06-25 2000-01-14 Nikon Corp 位置検出方法及び装置、並びに前記装置を備えた露光装置
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US6699624B2 (en) * 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
JP2006245030A (ja) * 2005-02-28 2006-09-14 Nikon Corp 計測方法及び計測用パターンを備えた物体
KR20080096297A (ko) * 2007-04-27 2008-10-30 삼성전자주식회사 반도체 소자의 오버레이 마크
NL2006451A (en) * 2010-05-06 2011-11-08 Asml Netherlands Bv Production of an alignment mark.
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
JP2015095631A (ja) 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． 半導体装置
US9329495B2 (en) 2013-11-20 2016-05-03 Globalfoundries Inc. Overlay metrology system and method
CN106030414B (zh) * 2014-02-21 2018-10-09 Asml荷兰有限公司 目标布置的优化和相关的目标
CN107532945B (zh) * 2015-04-21 2020-12-01 科磊股份有限公司 用于倾斜装置设计的计量目标设计
US9864209B2 (en) * 2015-05-19 2018-01-09 Kla-Tencor Corporation Self-moire target design principles for measuring unresolved device-like pitches
NL2017466A (en) 2015-09-30 2017-04-05 Asml Netherlands Bv Metrology method, target and substrate
US10018919B2 (en) * 2016-05-29 2018-07-10 Kla-Tencor Corporation System and method for fabricating metrology targets oriented with an angle rotated with respect to device features
KR102640173B1 (ko) * 2016-06-14 2024-02-26 삼성전자주식회사 회절 기반 오버레이 마크 및 오버레이 계측방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090291513A1 (en) * 2000-08-30 2009-11-26 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US20070081170A1 (en) * 2002-07-03 2007-04-12 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction

Also Published As

Publication number Publication date
JP2022183203A (ja) 2022-12-08
TW201939171A (zh) 2019-10-01
KR102408316B1 (ko) 2022-06-10
KR20200099615A (ko) 2020-08-24
SG11201913459RA (en) 2020-07-29
JP2021511532A (ja) 2021-05-06
US11137692B2 (en) 2021-10-05
CN111542784B (zh) 2025-05-06
CN111542784A (zh) 2020-08-14
WO2019139685A1 (en) 2019-07-18
US20200124982A1 (en) 2020-04-23
JP7544781B2 (ja) 2024-09-03

Similar Documents

Publication Publication Date Title
TWI780291B (zh) 具有傾斜週期性結構之度量衡目標及方法
TWI823028B (zh) 用於基於機器學習的影像產生以用於模型為基礎對準之電腦可讀媒體
CN106462078B (zh) 衬底和量测用图案形成装置、量测方法及器件制造方法
CN108401437B (zh) 用于高高宽比结构的x光散射测量计量
TWI691803B (zh) 量測方法及裝置
TWI603054B (zh) 量測由一微影製程製造之一結構之一性質之方法、用於量測一微影製程之效能之度量衡裝置及元件製造方法
US20140141536A1 (en) Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change
US10755016B2 (en) Hot spot and process window monitoring
TW201721297A (zh) 計量方法、目標及基板
KR101472902B1 (ko) 자외선 리소그래피 시스템들 및 방법들
KR20200022741A (ko) 반도체 소자의 제조 방법, 극 자외선 노광 방법 및 광 근접 보정 방법
US11169437B2 (en) Optical proximity correction (OPC) methods and methods of manufacturing masks using the OPC methods
KR20190062026A (ko) 모니터링 매크로 제공 방법, OPC(Optical Proximity Correction) 방법 및 EUV(Extreme ultraviolet radiation) 마스크 제조 방법
TWI833505B (zh) 用於多層結構之基於層的影像偵測及處理
JP5808406B2 (ja) 集積回路レイアウト内のリソグラフィック結合パターンの迅速評価方法
TW201505958A (zh) 藉由嵌段共聚物的自我組裝設計微影特徵之方法
TW201931482A (zh) 度量量測中圖案置放錯誤之減少或消除
TW201610711A (zh) 積體電路製程之度量計算方法
TW202349130A (zh) 基於模板輪廓之自適應加權之影像分析
TW200830035A (en) Mask pattern correction program and system
TWI587073B (zh) 用於產生定向自組裝之引導模板之方法
JP2006114898A (ja) リソグラフィ装置およびデバイス製造方法
CN107533020A (zh) 计算上高效的基于x射线的叠盖测量
KR100843228B1 (ko) 마스크 포토그래피 해석방법 및 이를 이용한 이미지 형성방법
TW202411775A (zh) 單一墊疊對量測

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent