KR102408316B1 - 경사진 주기적 구조물을 갖는 계측 타겟 및 방법 - Google Patents

경사진 주기적 구조물을 갖는 계측 타겟 및 방법 Download PDF

Info

Publication number
KR102408316B1
KR102408316B1 KR1020207023192A KR20207023192A KR102408316B1 KR 102408316 B1 KR102408316 B1 KR 102408316B1 KR 1020207023192 A KR1020207023192 A KR 1020207023192A KR 20207023192 A KR20207023192 A KR 20207023192A KR 102408316 B1 KR102408316 B1 KR 102408316B1
Authority
KR
South Korea
Prior art keywords
periodic
target
periodic structures
metrology target
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020207023192A
Other languages
English (en)
Korean (ko)
Other versions
KR20200099615A (ko
Inventor
펠러 요엘
마크 기노프커
알렉산더 스비체르
블라디미르 레빈스키
인나 타르시슈-샤피르
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20200099615A publication Critical patent/KR20200099615A/ko
Application granted granted Critical
Publication of KR102408316B1 publication Critical patent/KR102408316B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H01L22/12—
    • H01L22/24—
    • H01L22/26—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020207023192A 2018-01-12 2018-11-29 경사진 주기적 구조물을 갖는 계측 타겟 및 방법 Active KR102408316B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862617086P 2018-01-12 2018-01-12
US62/617,086 2018-01-12
PCT/US2018/062931 WO2019139685A1 (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Publications (2)

Publication Number Publication Date
KR20200099615A KR20200099615A (ko) 2020-08-24
KR102408316B1 true KR102408316B1 (ko) 2022-06-10

Family

ID=67218346

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207023192A Active KR102408316B1 (ko) 2018-01-12 2018-11-29 경사진 주기적 구조물을 갖는 계측 타겟 및 방법

Country Status (7)

Country Link
US (1) US11137692B2 (https=)
JP (2) JP2021511532A (https=)
KR (1) KR102408316B1 (https=)
CN (1) CN111542784B (https=)
SG (1) SG11201913459RA (https=)
TW (1) TWI780291B (https=)
WO (1) WO2019139685A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US11256177B2 (en) * 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
WO2021054928A1 (en) * 2019-09-16 2021-03-25 Kla Corporation Periodic semiconductor device misregistration metrology system and method
CN112731778B (zh) * 2019-10-28 2022-08-02 长鑫存储技术有限公司 一种半导体套刻精度的控制方法及叠层标记
DE102019220174B4 (de) 2019-12-19 2026-03-12 Carl Zeiss Industrielle Messtechnik Gmbh Verfahren und Vorrichtung zur Bestimmung eines Drehwinkels einer Drehachse
KR102857305B1 (ko) * 2020-02-07 2025-09-08 케이엘에이 코포레이션 반도체 디바이스의 오정합 측정에서의 비직교 타겟 및 이를 사용하기 위한 방법
CN113539867A (zh) * 2020-04-14 2021-10-22 中国科学院微电子研究所 半导体器件套刻精度的测量方法
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
CN111508932B (zh) * 2020-04-27 2021-12-14 深圳中科飞测科技股份有限公司 套刻标记及套刻误差的测量方法
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
WO2022253526A1 (en) * 2021-05-31 2022-12-08 Asml Netherlands B.V. Metrology measurement method and apparatus
EP4137889A1 (en) * 2021-08-20 2023-02-22 ASML Netherlands B.V. Metrology measurement method and apparatus
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
WO2023066657A1 (en) * 2021-10-19 2023-04-27 Asml Netherlands B.V. Pattern matching method
US12242202B2 (en) 2022-01-04 2025-03-04 Nanya Technology Corporation Method for overlay error correction
US20230213872A1 (en) * 2022-01-04 2023-07-06 Nanya Technology Corporation Mark for overlay measurement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040137341A1 (en) 2001-02-27 2004-07-15 Xinhui Niu Grating test patterns and methods for overlay metrology
US20090291513A1 (en) 2000-08-30 2009-11-26 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US20150138555A1 (en) 2013-11-20 2015-05-21 Globalfoundries Inc. Overlay metrology system and method
WO2017055106A1 (en) 2015-09-30 2017-04-06 Asml Netherlands B.V. Metrology method, target and substrate

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284922A (ja) * 1985-06-10 1986-12-15 Nippon Kogaku Kk <Nikon> 回折格子を備えた基板及び該基板の位置検出装置
JPH0547634A (ja) * 1991-08-13 1993-02-26 Nikon Corp 位置検出装置
JP2870461B2 (ja) * 1995-12-18 1999-03-17 日本電気株式会社 フォトマスクの目合わせマーク及び半導体装置
JP2000012445A (ja) * 1998-06-25 2000-01-14 Nikon Corp 位置検出方法及び装置、並びに前記装置を備えた露光装置
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
JP2006245030A (ja) * 2005-02-28 2006-09-14 Nikon Corp 計測方法及び計測用パターンを備えた物体
KR20080096297A (ko) * 2007-04-27 2008-10-30 삼성전자주식회사 반도체 소자의 오버레이 마크
NL2006451A (en) * 2010-05-06 2011-11-08 Asml Netherlands Bv Production of an alignment mark.
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
JP2015095631A (ja) 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． 半導体装置
CN106030414B (zh) * 2014-02-21 2018-10-09 Asml荷兰有限公司 目标布置的优化和相关的目标
CN107532945B (zh) * 2015-04-21 2020-12-01 科磊股份有限公司 用于倾斜装置设计的计量目标设计
US9864209B2 (en) * 2015-05-19 2018-01-09 Kla-Tencor Corporation Self-moire target design principles for measuring unresolved device-like pitches
US10018919B2 (en) * 2016-05-29 2018-07-10 Kla-Tencor Corporation System and method for fabricating metrology targets oriented with an angle rotated with respect to device features
KR102640173B1 (ko) * 2016-06-14 2024-02-26 삼성전자주식회사 회절 기반 오버레이 마크 및 오버레이 계측방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090291513A1 (en) 2000-08-30 2009-11-26 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US20040137341A1 (en) 2001-02-27 2004-07-15 Xinhui Niu Grating test patterns and methods for overlay metrology
US20150138555A1 (en) 2013-11-20 2015-05-21 Globalfoundries Inc. Overlay metrology system and method
WO2017055106A1 (en) 2015-09-30 2017-04-06 Asml Netherlands B.V. Metrology method, target and substrate

Also Published As

Publication number Publication date
JP2022183203A (ja) 2022-12-08
TW201939171A (zh) 2019-10-01
KR20200099615A (ko) 2020-08-24
SG11201913459RA (en) 2020-07-29
JP2021511532A (ja) 2021-05-06
US11137692B2 (en) 2021-10-05
CN111542784B (zh) 2025-05-06
CN111542784A (zh) 2020-08-14
TWI780291B (zh) 2022-10-11
WO2019139685A1 (en) 2019-07-18
US20200124982A1 (en) 2020-04-23
JP7544781B2 (ja) 2024-09-03

Similar Documents

Publication Publication Date Title
KR102408316B1 (ko) 경사진 주기적 구조물을 갖는 계측 타겟 및 방법
JP6412163B2 (ja) メトロロジーに用いられる基板及びパターニングデバイス、メトロロジー方法、及びデバイス製造方法
KR102015934B1 (ko) 리소그래피를 위한 계측법
US10755016B2 (en) Hot spot and process window monitoring
JP6906050B2 (ja) メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム
CN102033433A (zh) 用于为显微结构的电磁散射性质建模的方法和设备以及用于重构显微结构的方法和设备
US11169437B2 (en) Optical proximity correction (OPC) methods and methods of manufacturing masks using the OPC methods
CN106030411A (zh) 确定边缘定位误差的方法、检测设备、图案形成装置、衬底及器件制造方法
CN112219271B (zh) 用以识别与光学邻近校正相关的系统性缺陷的混合设计布局
TW202411775A (zh) 單一墊疊對量測
CN109709764B (zh) 微光刻掩模、确定其结构的像的边缘位置的方法及系统
KR102819741B1 (ko) 정렬 방법 및 연관된 정렬 및 리소그래피 장치
KR102631111B1 (ko) 디바이스 오버레이 에러 감소 방법
US10748821B2 (en) Method and system for measuring pattern placement error on a wafer
KR102802753B1 (ko) 분할 타겟을 사용한 스티칭 오차의 측정
NL2024432A (en) Alignment method and associated alignment and lithographic apparatuses

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000