TWI779218B - 半導體結構及其形成方法 - Google Patents

半導體結構及其形成方法 Download PDF

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TWI779218B
TWI779218B TW108125768A TW108125768A TWI779218B TW I779218 B TWI779218 B TW I779218B TW 108125768 A TW108125768 A TW 108125768A TW 108125768 A TW108125768 A TW 108125768A TW I779218 B TWI779218 B TW I779218B
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Taiwan
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die
conductive
forming
bottom wafer
wafer
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TW108125768A
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TW202022959A (zh
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余振華
史朝文
陳明發
葉松峯
劉醇鴻
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台灣積體電路製造股份有限公司
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Abstract

一種形成半導體結構的方法，包含：將多個頂部晶粒的多個背側附著至底部晶圓的前側，底部晶圓包括多個底部晶粒；在底部晶圓的前側上形成鄰近於多個頂部晶粒的多個第一導電柱；在底部晶圓的前側上形成圍繞多個頂部晶粒且圍繞多個第一導電柱的第一介電材料；以及切割底部晶圓以形成多個結構，多個結構中的每一者包括多個頂部晶粒中的至少一者及多個底部晶粒中的至少一者。

Description

半導體結構及其形成方法
本發明的實施例是有關於半導體結構及其形成方法。
歸因於各種電子組件(例如電晶體、二極體、電阻器、電容器等)的整合密度的持續改良，半導體業界已經歷快速成長。主要而言，積整合密度的此改良來自最小特徵大小的反覆減小，此允許將更多組件整合至給定區域中。
隨著對於縮小的電子元件的需求增長，已出現對於更小且更創造性的半導體晶粒的封裝技術的需要。此類封裝系統的實例為疊層封裝(Package-on-Package；PoP)技術。在PoP元件中，頂部半導體封裝體堆疊於底部半導體封裝體的頂部上，以提供高水準的整合密度及組件密度。另一實例為基底上晶圓上晶片(Chip-On-Wafer-On-Substrate；CoWoS)結構，其中半導體晶片附著至晶圓(例如，中介物)以形成晶圓上晶片(Chip-On-Wafer；CoW)結構。CoW結構接著附著至基底(例如，印刷電路板)以形成CoWoS結構。此等及其他進階封裝技術使得能夠生產具有增強功能性及較小覆蓋面積的半導體元件。
積體扇出(Integrated Fan Out；InFO)封裝技術變得日益 風行，尤其當與晶圓級封裝(Wafer Level Packaging；WLP)技術組合時。使用InFO封裝技術的封裝結構以相對較低的成本及高效能封裝提供高功能密度。
本發明實施例的一種形成半導體結構的方法，所述方法包括：將多個頂部晶粒的多個背側附著至底部晶圓的前側，所述底部晶圓包括多個底部晶粒；在所述底部晶圓的所述前側上形成鄰近於所述多個頂部晶粒的多個第一導電柱；在所述底部晶圓的所述前側上形成圍繞所述多個頂部晶粒且圍繞所述多個第一導電柱的第一介電材料；以及切割所述底部晶圓以形成多個結構，所述多個結構中的每一者包括所述多個頂部晶粒中的至少一者及所述多個底部晶粒中的至少一者。
本發明實施例的一種形成半導體結構的方法，所述方法包括：形成積體電路元件，其中形成所述積體電路元件包括：將第二晶粒的背側附著至第一晶粒的前側，其中所述第一晶粒具有位於所述第一晶粒的所述前側處的多個第一導電墊，所述多個第一導電墊設置於所述第二晶粒的邊界外部；在所述第一晶粒的所述前側上且圍繞所述第二晶粒形成介電材料；在所述介電材料中形成多個第一導電柱且所述多個第一導電柱電耦接至所述第一晶粒的所述多個第一導電墊；在所述介電材料上形成重佈線結構且所述重佈線結構電耦接至所述第二晶粒及所述多個第一導電柱；以及在所述重佈線結構上方形成多個連接件。所述方法還包括：將所述積體電路元件的所述多個連接件附著至中介物的第一側； 在所述中介物的所述第一側上形成圍繞所述積體電路元件的模製材料；以及在所述中介物的第二側上形成多個導電凸塊。
本發明實施例的一種半導體結構，包括第一晶粒、第二晶粒、第一導電柱、第一介電材料、重佈線結構以及多個外部連接件。第一晶粒具有位於所述第一晶粒的第一側處的多個第一導電墊。第二晶粒具有背對所述第一晶粒的第一側且具有附著至所述第一晶粒的所述第一側的第二側，所述第二晶粒具有位於所述第二晶粒的所述第一側處的多個第二導電墊。第一導電柱附著至所述第一晶粒的所述多個第一導電墊的一者且鄰近於所述第二晶粒。第一介電材料位於所述第一晶粒的所述第一側上且圍繞所述第二晶粒並圍繞所述第一導電柱，其中所述第一介電材料與所述第一晶粒共端。重佈線結構位於所述第一介電材料上且電耦接至所述第一導電柱及所述第二晶粒的所述多個第二導電墊。多個外部連接件位於所述重佈線結構的第一側上，所述重佈線結構的所述第一側背對所述第二晶粒。
21:第三晶粒
40、41:元件區
50:頂部晶粒
51、101、171、201、271、327:基底
52、118、185:第二鈍化層
53、108:金屬化層
54、146、318:黏著劑膜
55:晶粒連接件
56、137:黏著劑層
57、135、193:載子
59:氮化物層
61:切割帶
63、194:框架
100:底部晶粒
100':底部晶圓
105、310:內連線結構
106:底部晶圓的一部分
107、317:接合墊
107T:接合墊金屬
107V:接合墊通孔
108A:下部金屬化層
108B:上部金屬化層
110、113、149、179V、188、313、329:通孔
111、114、125、127、145、176、177、178、181、311、321、321A、321B、321C:介電層
112、115:金屬線
116、183:第一鈍化層
117:重佈線通孔
119:重佈線
121:拋棄式探測墊
123、174B:焊料蓋
128、189、203、273、275:導電墊
131、132、141、323、324:導電柱
133、134、159:介電材料
136:焊錫膏
138:開口
139:背側介電層
143、191:模製材料
144、163、174、274:外部連接件
147、179L、315:導電線
148、158、173、331、341、351、361:重佈線結構
150、150A、150B、150C、150D、150E、150F、150G、150H、150I、150J、150K、150L、150M、150N:積體電路元件
154:切割線
161:墊
162、166、169、204:底膠材料
165:微墊
167:積體被動元件
168:連接件
170:中介物
171B:表面
172:基底穿孔
172L:襯裡
174A、195、335:導電凸塊
175:導電材料
182:凸塊下金屬結構
190:晶圓上晶片結構
192:載帶
211:封蓋
211S:側壁部分
211T:頂部部分
213:熱界面材料
220、500、510A、510B、510C:半導體結構
277:模製化合物
278:導電特徵
279、301、302、303、304、305、306、307、308、309:晶粒
324L:下部部分
324U:上部部分
325:連接件晶片
510:底部封裝體
520:頂部封裝體
1010、1020、1030、1040:步驟
A-A、B-B、C-C、D-D:橫截面
H1:厚度
H2、H3、H4、H5:高度
Mz:頂部金屬層
結合隨附圖式閱讀以下具體實施方式時會最佳地理解本揭露內容的態樣。應注意，根據業界中的標準慣例，各種特徵未按比例繪製。事實上，可出於論述清楚起見而任意地增大或減小各種特徵的尺寸。
圖1至圖3示出根據實施例的形成多個晶粒的過程。
圖4至圖7示出根據實施例的用以測試底部晶圓的電路探測處理。
圖8及圖9示出底部晶圓的額外實施例。
圖10至圖17示出根據實施例的在各種製造階段上的半導體結構的橫截面視圖。
圖18示出根據實施例的半導體結構的橫截面視圖。
圖19A及圖19B示出根據實施例的半導體結構的橫截面視圖。
圖20A及圖20B示出根據實施例的半導體結構的橫截面視圖。
圖21至圖27示出根據實施例的在各種製造階段上的積體晶片上系統(System on Integrated Chips；SoIC)的橫截面視圖。
圖28至圖33示出根據實施例的在各種製造階段上的積體晶片上系統(SoIC)的橫截面視圖。
圖34至圖36、圖37A、圖37B以及圖38至圖42示出根據實施例的在各種製造階段上的半導體結構的橫截面視圖。
圖43至圖46、圖47A、圖47B、圖48、圖49以及圖50A至圖50C示出積體晶片上系統(SoIC)的各種實施例的橫截面視圖。
圖51示出在一些實施例中的用於形成半導體結構的方法的流程圖。
以下揭露內容提供用以實施本發明的不同特徵的許多不同實施例或實例。下文描述組件及配置的具體實例以簡化本揭露內容。當然，此等組件及配置僅為實例且並不意欲為限制性的。舉例而言，在以下描述中，第一特徵形成於第二特徵上方或第二 特徵上可包含第一特徵與第二特徵直接接觸地形成的實施例，且亦可包含額外特徵可形成於第一特徵與第二特徵之間以使得第一特徵與第二特徵可不直接接觸的實施例。貫穿本文中的描述，除非另外規定，否則不同圖式中的相同附圖標號指代使用相同或類似材料藉由相同或類似形成方法來形成的相同或類似組件。
另外，為易於描述，在本文中可使用諸如「在...之下(beneath)」、「在...下方(below)」、「下部(lower)」、「在...之上(above)」、「上部(upper)」以及類似者的空間相對術語以描述如圖式中所示出的一個部件或特徵與另一部件或特徵的關係。除圖式中所描繪的定向之外，空間相對術語還意欲涵蓋元件在使用或操作中的不同定向。設備可以其他方式定向(旋轉90度或處於其他定向)且本文中所使用的空間相對描述詞可同樣相應地進行解譯。
在形成具有導電線之間的精細間距及針對高效能應用的良好熱耗散的堆疊半導體結構的上下文中論述本揭露內容的實施例，所述高效能應用諸如場可程式化閘陣列(Field-Programmable Gate Array；FPGA)、圖像處理單元(Graphics Processing Unit；GPU)、記憶體元件以及類似者。在一些實施例中，為形成積體晶片上系統(SoIC)，將頂部晶粒的背側經由熔融接合(fusion bonding)製程接合至底部晶粒的前側。導電柱在底部晶粒的前側處且鄰近於頂部晶粒形成於底部晶粒的接合墊上。介電材料圍繞頂部晶粒且圍繞導電柱形成於底部晶粒的前側上。重佈線結構接著形成於介電材料上方。可整合SoIC以形成不同的半導體封裝體，諸如具有基底上晶圓上晶片(CoWoS)結構的封裝體或積體 扇出型(InFO)封裝件。
圖1至圖3示出用以形成頂部晶粒50的過程，其中頂部晶粒50可在隨後的製程中附著至底部晶粒100以形成積體晶片上系統(SoIC)(見例如圖11中的積體電路元件150)。首先參考圖1，多個元件區40形成於基底51(例如，晶圓)中或基底51上。多個元件區40中的每一者中的多個電組件內連以形成各別頂部晶粒的功能電路，且後續切割製程將使基底51單體化以形成多個頂部晶粒50，如下文中所論述。
基底51可為半導體基底，諸如摻雜或未摻雜的矽，或絕緣層上半導體(semiconductor-on-insulator；SOI)基底的主動層。基底51可包含其他半導體材料，諸如：鍺；化合物半導體，包含碳化矽、砷化鎵、磷化鎵、氮化鎵、磷化銦、砷化銦及/或銻化銦；合金半導體，包含矽鍺(SiGe)、磷化鎵砷(GaAsP)、砷化銦鋁(AlInAs)、砷化鎵鋁(AlGaAs)、砷化銦鎵(GaInAs)、磷化銦鎵(GaInP)及/或磷砷化銦鎵(GaInAsP)；或其組合。亦可使用其他基底，諸如多層基底或梯度基底。諸如電晶體、二極體、電容器、電阻器或類似者的元件可形成於基底51中及/或所述基底上(例如，形成於元件區40中)且可藉由金屬化層53內連以形成功能電路。金屬化層53可包含使用合適的形成方法(諸如沈積、鑲嵌、雙鑲嵌、類似者或其組合)形成於基底51上方的一或多個介電層中的金屬化圖案(例如，金屬線及通孔)。注意，為簡單起見，元件區40可能未在後續圖式中示出。
第一鈍化層(未繪示)可形成於金屬化層53上方以便為下伏結構提供保護。第一鈍化層可由一或多種合適的介電材料製 成，所述介電材料諸如氧化矽、氮化矽、諸如摻碳氧化物的低介電常數(k)介電質、諸如多孔摻碳二氧化矽(porous carbon doped silicon dioxide)的極低k介電質、此等的組合，或類似者。第一鈍化層可經由諸如化學氣相沈積(chemical vapor deposition；CVD)的製程形成，但可利用任何合適的製程。
導電墊(例如鋁墊，未繪示)可形成於金屬化層53上方且與所述金屬化層電接觸。導電墊可延伸穿過第一鈍化層以電耦接至金屬化層53。導電墊可包括鋁，但可替代地使用其他材料，諸如銅。可使用諸如濺鍍的沈積製程以形成材料層且接著可經由合適的製程(諸如，微影遮罩及蝕刻)移除所述材料層的部分以形成導電墊而形成導電墊。然而，可利用任何其他合適的製程來形成導電墊。
第二鈍化層52(其包括合適的介電材料)形成於第一鈍化層上方。第二鈍化層52可為諸如聚苯并噁唑(polybenzoxazole；PBO)、聚醯亞胺(polyimide；PI)、低溫聚醯亞胺(low-temperature polyimide；LPTI)、苯環丁烷(benzocyclobutene；BCB)或類似者的聚合物，且可藉由旋轉塗佈、疊層、化學氣相沈積(CVD)或類似者來形成。形成延伸穿過第二鈍化層52以電耦接至各別導電墊的晶粒連接件55。晶粒連接件55可為諸如銅柱的導電柱，且可藉由例如鍍覆或類似者來形成。
在一些實施例中，在形成晶粒連接件55之後，經由晶粒連接件55藉由電路探測處理來測試基底51中的多個頂部晶粒50，以識別已知良好晶粒(known good dies；KGDs)。已知良好晶粒用於在後續製程中形成SoIC 150。
接下來，在圖2中，第二鈍化層52經由黏著劑層56附著至載子57。載子57可由諸如玻璃、矽、聚合物、聚合物複合物、金屬箔、陶瓷、玻璃環氧樹脂、氧化鈹、載帶的材料或用於結構支撐的其他合適的材料製成。在一些實施例中，黏著劑層56沈積於載子57上方或疊層於載子57上方。在一些實施例中，黏著劑層56為晶粒貼合膜(Die Attaching Film；DAF)。
接下來，執行薄化製程以減小基底51的厚度。使用研磨製程及/或化學機械平坦化(chemical mechanical planarization；CMP)製程自基底51的背側(例如，圖2中的基底51的下部側)執行薄化製程。在一些實施例中，基底的厚度自例如約780微米減小至在約1微米與約100微米之間(諸如約40微米)的厚度H1。
接下來，視情況選用的氮化物層59(諸如氮化矽層)形成於基底51的背側上方。氮化物層59可使用低溫沈積製程形成且可被稱為低溫氮化矽層。在沈積之後，氮化物層59可例如藉由CMP製程而平坦化。在一些實施例中，省略氮化物層59。氮化物層59可用以在後續熔融接合製程中形成例如頂部晶粒50與底部晶圓100'(見圖10)之間的更強接合。
接下來，在圖3中，將圖2中所示出的結構附著至由框架63(例如，金屬框架)支撐的切割帶61，且藉由載子剝離(de-bonding)製程移除載子57。在剝離載子57之後，可執行清潔製程(例如，DAF清潔製程)以移除黏著劑層56的剩餘部分。接下來，執行切割製程以使基底51單體化，且形成多個頂部晶粒50。圖3中的頂部晶粒50的上部側(晶粒連接件55形成於其中) 被稱為頂部晶粒50的前側，且圖3中的頂部晶粒50的下部側被稱為頂部晶粒50的背側。
圖4至圖7示出用以測試底部晶圓100'的電路探測處理，在電路探測處理之後，底部晶圓100'將在後續製程中單體化以形成用於形成SoIC的多個底部晶粒100(見例如圖11)。參考圖4，提供底部晶圓100'，其包含基底101、元件區41(與圖1中的元件區40相同或類似)以及基底101的前側上方的金屬化層108。圖4進一步示出金屬化層108上方的拋棄式探測墊121。注意，為簡單起見，並未在圖4中示出底部晶圓100'的所有特徵，且元件區41可能未在後續圖式中示出。
圖5示出圖4的底部晶圓100'的一部分106的放大視圖。如圖5中所示出，底部晶圓100'包含基底101、金屬化層108、第一鈍化層116、第二鈍化層118、導電墊128、重佈線(redistribution lines)119以及重佈線通孔117。另外，圖5示出位於各別導電墊128上方且電耦接至所述各別導電墊的拋棄式探測墊121，以及拋棄式探測墊121上的焊料蓋123。
在圖5的實例中，金屬化層108包含下部金屬化層108A及上部金屬化層108B。下部金屬化層108A包含由例如極端低K(extreme low-K；ELK)材料形成的多個介電層111，以及形成於介電層111中的導電特徵(例如，金屬線112、通孔110)。上部金屬化層108B包含由例如未摻雜矽酸鹽玻璃(un-doped silicate glass；USG)形成的多個介電層114，以及形成於介電層114中的導電特徵(例如，金屬線115、通孔113)。在一些實施例中，上部金屬化層108B中的導電特徵(例如，線、通孔)的尺寸(例如， 金屬線/通孔的厚度及/或寬度，或相鄰金屬線或通孔之間的間隔)大於下部金屬化層108A中的導電特徵的對應尺寸。金屬化層108、第一鈍化層116、第二鈍化層118以及導電墊128的形成方法與頂部晶粒50的彼等形成方法相同或類似，因此並未重複細節。
如圖5中所示出，重佈線119(例如，金屬線)形成於第一鈍化層116上方且連接至導電墊128(例如，鋁墊)。重佈線119將導電墊128處的電訊號重新路由(re-route)而傳送至不同位置，且經由重佈線通孔117電耦接至金屬化層108的例如最頂部金屬特徵(例如，金屬特徵115)。如圖5中所繪示，重佈線通孔117延伸穿過第一鈍化層116且將重佈線119電耦接至金屬化層108。拋棄式探測墊121可為延伸穿過第二鈍化層118以電耦接至各別導電墊128的銅柱。
在一些實施例中，第二鈍化層118為具有約1000埃厚度的氮化矽層，導電墊128為具有在約0.5微米與約5微米之間(諸如2.8微米)的厚度(量測垂直於基底101的上部表面的方向)的鋁墊。拋棄式探測墊121為具有在約0.5微米與約10微米之間(諸如1微米)的厚度的銅柱，且焊料蓋123(例如，無鉛焊料區)具有在約1微米與約20微米之間(諸如2微米)的厚度。
在一些實施例中，執行電路探測處理以測試底部晶圓100'中的晶粒的功能以識別已知良好晶粒。經由拋棄式探測墊121執行電路探測處理。底部晶圓100'中的被識別為已知良好晶粒將用來形成SoIC。
接下來，在圖6中，在針對底部晶圓100'的電路探測處理完成之後，移除拋棄式探測墊121及焊料蓋123，且暴露導電墊 128。舉例而言，可執行使用硫酸(例如，H2SO4)的濕式蝕刻製程以移除拋棄式探測墊121及焊料蓋123。
接下來，在圖7中，一或多個介電層(例如，介電層125及介電層127)形成於第二鈍化層118上方及導電墊128上方。作為實例，介電層125由氧化物形成，諸如正矽酸四乙酯(tetraethyl orthosilicate；TEOS)。在一些實施例中，介電層127由與介電層125相同的材料(例如，氧化物)形成。在其他實施例中，介電層127由與介電層125不同的介電材料形成。舉例而言，介電層127可由不同於介電層125的氧化物形成，諸如USG或高密度電漿(high density plasma；HDP)化學氣相沈積氧化物。可執行諸如CMP的平坦化製程以使沈積的介電層125/介電層127平坦化。
接下來，多個接合墊107形成於介電層127/介電層125中。圖7中的多個接合墊107中的每一者包含接合墊金屬(bonding pad metal；BPM)107T及接合墊通孔(bonding pad via；BPV)107V。接合墊107使用例如雙鑲嵌製程由諸如銅的導電材料形成。如所示出，在圖7中，接合墊107自介電層127的上部表面延伸至導電墊128。接合墊107的上部表面與介電層127的上部表面齊平，且接合墊107的下部表面接觸導電墊128。在後續製程中，導電柱131(見圖10)形成於接合墊107上以電耦接至金屬化層108。圖7中的金屬化層108及金屬化層108上方的結構，諸如第一鈍化層116、第二鈍化層118、導電墊128、重佈線119、重佈線通孔117、介電層125/介電層127以及接合墊107可統稱為內連線結構105。
在一些實施例中，接合墊金屬107T的高度(沿垂直於基底101的上部表面的方向量測)在約0.1微米與約2微米之間(諸 如0.85微米)，且接合墊通孔107V的高度在約0.5微米與約5微米之間(諸如2.4微米)。
圖8示出接合墊107的另一實施例，其中多個接合墊107中的每一者在接合墊107的頂部表面與底部表面之間具有實質上均勻的寬度。圖8中的接合墊107可藉由單鑲嵌製程形成。
圖9示出接合墊107的又一實施例。圖9中的接合墊107類似於圖7的彼等接合墊，但圖9中的接合墊107直接耦接至金屬化層108中的頂部金屬層Mz(例如，最頂部金屬層)。換言之，圖7及圖8中的接合墊107直接耦接至導電墊128，而圖9中的接合墊107直接耦接至金屬化層108的頂部金屬層Mz。由於圖9中的接合墊107在介電層127之下延伸更深，故圖9中的接合墊通孔107V的高度(沿垂直於基底101的上部表面的方向量測)可大於圖7的接合墊通孔的高度，諸如具有約6微米的值。
注意，圖7至圖9示出底部晶圓100'的一部分，其中接合墊107形成於底部晶圓100'的上部表面處。底部晶圓100'的上部表面具有其中並未形成接合墊107的其他區域。在一些實施例中，在後續製程中，頂部晶粒50將經由熔融接合製程接合至底部晶圓100'的上部表面的沒有接合墊107的區域。
圖10至圖17示出根據實施例的在各種製造階段上的半導體封裝體500(見圖17)的橫截面視圖。半導體封裝體500具有疊層封裝(PoP)結構，且包含附著至底部封裝體510的頂部封裝體520。底部封裝體510為整合有積體晶片上系統(SoIC)150(見圖11)的積體扇出型(InFO)封裝件。在下文中論述細節。
參考圖10，多個頂部晶粒50(諸如來自圖3的為已知良 好晶粒的頂部晶粒50)藉由熔融接合製程附著至底部晶圓100'的前側，諸如圖7至圖9中所示出的彼等底部晶圓100'。在所示出的實施例中，頂部晶粒50的背側藉由熔融接合製程接合至無接合墊107的區域中的底部晶圓100'的最頂部介電層(例如，介電層127)，其中最頂部介電層(例如，介電層127)為諸如氧化矽層的氧化物層。在一些實施例中，在熔融接合製程之前，施加機械應力以將頂部晶粒50及底部晶圓100'按壓在一起。接下來，藉由將頂部晶粒50及底部晶圓100'加熱至約200℃與約500℃之間的溫度來執行熔融接合製程。(頂部晶粒50及底部晶圓100'在熔融接合製程期間位於其中)的熔融接合腔室的壓力可在約0.1托(torr)與約100托之間。
前已述及，在圖2中，氮化物層59(例如，氮化矽層)可形成於頂部晶粒50的背側上。在氮化物層59形成於頂部晶粒50的背側上的實施例中，熔融接合製程在氮化物層59與底部晶圓100'的最頂部介電層(例如，氧化矽層)之間形成接合。在省略氮化物層59的實施例中，熔融接合製程在頂部晶粒50的基底的材料(例如，矽)與底部晶圓100'的最頂部介電層(例如，氧化矽層)之間形成接合。在一些實施例中，氮化矽與氧化矽之間的接合比矽與氧化矽之間的接合更強，且因此，在頂部晶粒50的背側上形成氮化物層59提供頂部晶粒50與底部晶圓100'之間的更強接合。
仍參考圖10，在將頂部晶粒50接合至底部晶圓100'之後，導電柱131形成於底部晶圓的接合墊107上。導電柱131可藉由在底部晶圓100'上方形成具有開口的經圖案化罩幕層(例 如，經圖案化光阻)來形成，其中開口的位置對應於待形成的導電柱131的位置，且開口暴露下伏接合墊107。接下來，諸如銅的導電材料藉由例如鍍覆製程形成於圖案化罩幕層的開口中。在使用導電材料填充開口之後，接著使用合適的移除方法(諸如灰化)移除圖案化罩幕層(例如，圖案化光阻)。導電柱131在後續製程中由介電材料包圍之後變成通孔。
在一些實施例中，導電柱131的高度H2在約10微米與約100微米之間，諸如約30微米。導電柱131的寬度在約10微米與約50微米之間，諸如約30微米，且相鄰導電柱131之間的間距在約20微米與約100微米之間，諸如約70微米。
接下來，在圖11中，介電材料133圍繞導電柱131且圍繞頂部晶粒50形成於底部晶圓100'的前側上方。介電材料133可為聚醯亞胺、低溫聚醯亞胺、模製材料或類似者，且可藉由例如塗佈製程(諸如旋轉塗佈)形成。在形成介電材料133之後，載子附著至介電材料133，且藉由例如研磨製程使底部晶圓100'自背側薄化。
在背側研磨製程之後，底部晶圓100'的背側附著至切割帶，且執行切割製程以將底部晶圓100'分離成多個底部晶粒100且形成多個積體電路元件150。在實施例中，積體電路元件150為SoIC。多個SoIC 150中的每一者包含底部晶粒100、附著至底部晶粒100的前側的頂部晶粒50、底部晶粒100的前側上的導電柱131以及介電材料133。儘管圖11僅繪示兩個SoIC 150，但在切割製程之後形成的SoIC 150的數目可為任何合適的數目。另外，附著至底部晶粒100的頂部晶粒50的數目以及SoIC 150的結 構可改變以具有不同結構，在下文中論述其細節。
在圖11的實例中，SoIC 150包含頂部晶粒50及底部晶粒100，其中頂部晶粒50的背側附著至底部晶粒100的前側。因此，SoIC 150亦被稱為具有背對面(back-to-face)接合機制，或被稱為背對面SoIC。導電柱131形成於接合墊107上方。導電柱131及頂部晶粒50由介電材料133包圍，所述介電材料133與底部晶粒100側向地共端(conterminous)。換言之，介電材料133的多個側壁與底部晶粒100的各別側壁對準。在一些實施例中，SoIC 150的高度H3在約100微米與約300微米之間，諸如約180微米。
接下來，在圖12中，黏著劑層137及背側介電層139連續形成於載子135上方。載子135支撐形成於其上的半導體結構，且可由諸如矽、聚合物、聚合物複合物、金屬箔、陶瓷、玻璃、玻璃環氧樹脂、氧化鈹、載帶的材料或用於結構支撐的其他合適的材料製成。在一些實施例中，載子135為玻璃載子。在一些實施例中，黏著劑層137沈積於載子135上方或疊層於所述載子上方。黏著劑層137可為感光性的，且可藉由例如在後續載子剝離製程中在載子135上照射紫外線(ultra-violet；UV)光而易於自載子135拆離。舉例而言，黏著劑層137可為由明尼蘇達州聖保羅的3M公司(3M Company)製成的光-熱轉換(light-to-heat-conversion；LTHC)塗層。
在一些實施例中，背側介電層139可充當緩衝層，且可由諸如聚醯亞胺(PI)、聚苯并噁唑(PBO)或苯環丁烷的聚合物製成。可使用任何合適的所屬技術領域中已知的方法以形成背側 介電層139，所述方法諸如物理氣相沈積(physical vapor deposition；PVD)、化學氣相沈積(CVD)、印刷、旋轉塗佈、噴塗、燒結(sintering)或類似者。
接下來，犧牲材料(未繪示)形成於背側介電層139上方。作為實例，犧牲材料可包括光阻、有機材料、絕緣材料或其他材料，且可藉由PVD、CVD、旋轉塗佈或其他合適的沈積技術來形成。使用例如微影製程或直接圖案化製程以圖案或開口使犧牲材料圖案化，用於形成導電柱141。接下來，使用導電材料填充犧牲材料中的開口以形成導電柱141。導電材料可包括銅(Cu)，但亦可使用其他合適的導電材料。在一些實施例中，使用鍍覆製程以在犧牲材料的開口中形成導電材料。可在鍍覆製程之前形成晶種層。舉例而言，鍍覆製程可包括電化學鍍覆(electro-chemical plating；ECP)、無電式鍍覆或其他類型的鍍覆製程。在鍍覆製程之後，剝除或移除犧牲材料，且在背側介電層139上方形成導電柱141，如圖12中所繪示。導電柱141在後續製程中由模製材料包圍之後變成通孔。導電柱141的高度H4可在約100微米與約300微米之間，諸如約200微米。導電柱141的寬度可在約50微米與約300微米之間，諸如約190微米，且相鄰導電柱141之間的間距可在約100微米與約400微米之間，諸如約300微米。
接下來，在圖13中，使用例如黏著劑膜146(諸如DAF)將諸如在圖11的製程之後形成的彼等多個SoIC 150附著至背側介電層139。
接下來，在圖14中，模製材料143設置於背側介電層139上方且圍繞SoIC 150及導電柱141。舉例而言，在模製材料143 的俯視圖中，模製材料143可環繞SoIC 150及導電柱141。在圖14的實例中，模製材料143包圍SoIC 150且接觸(例如，實體地接觸)介電材料133的側壁。
模製材料143可包含任何合適的材料，諸如環氧樹脂、模製底膠以及類似者。用於形成模製材料143的合適的方法可包含壓縮模製(compressive molding)、傳遞模製(transfer molding)、液體包封體模製(liquid encapsulant molding)或類似者。在模製材料143形成之後，可執行諸如CMP的平坦化製程以達成模製材料143的水平上部表面。在平坦化製程之後，導電柱141、導電柱131以及晶粒連接件55暴露於模製材料143的上部表面處。導電柱141在由模製材料143包圍之後變成通孔。
接下來，在圖15中，重佈線結構148形成於模製材料143上方且電耦接至導電柱141、導電柱131以及頂部晶粒50的晶粒連接件55。重佈線結構148包括導電特徵，諸如形成於一或多個介電層145中的導電線147及通孔149的一或多個層。在一些實施例中，一或多個介電層145由諸如聚苯并噁唑(PBO)、聚醯亞胺、苯環丁烷(BCB)或類似者的聚合物形成。一或多個介電層145可藉由任何可接受的沈積製程形成，諸如旋轉塗佈、化學氣相沈積(CVD)、疊層、類似者或其組合。
在一些實施例中，重佈線結構148的導電特徵包括由諸如銅、鈦、鎢、鋁或類似者的合適的導電材料形成的導電線147及通孔149。可藉由例如以下步驟來形成導電特徵：在介電層145中形成開口以暴露下伏導電特徵；在介電層145上方及開口中形成晶種層；在晶種層上方形成具有所設計圖案的圖案化光阻；對 所設計圖案中的及晶種層上方的導電材料進行鍍覆(例如，電鍍或無電式鍍覆)；以及移除未在其上形成導電材料的光阻及晶種層的部分。
如圖15中所示出，頂部晶粒50與底部晶粒100之間的連通經過重佈線結構148。舉例而言，來自底部晶粒100的電訊號在進入頂部晶粒50的晶粒連接件55之前經由導電柱131行進至重佈線結構148。
仍參考圖15，外部連接件163(亦可稱為導電凸塊)形成於墊161上方，所述墊161電耦接至重佈線結構148的導電特徵。外部連接件163可為焊料球，諸如球柵陣列封裝(Ball Grid Array；BGA)球、受控塌陷晶片連接件(Controlled Collapse Chip Connector；C4)凸塊、微凸塊以及類似者。在一些實施例中，一或多個積體被動元件(Integrated Passive Devices；IPDs)167電耦接至微墊165，微墊165電耦接至重佈線結構148的導電特徵。在圖15的實例中，IPD元件167的連接件168藉由例如焊料區接合至微墊165，且底膠材料162可填充IPD元件167與重佈線結構148之間的間隙。可將諸如平衡-不平衡轉換器(baluns)、耦接器、分裂器(splitters)、濾波器以及雙工器的廣泛多種被動元件整合於IPD元件中。IPD元件因覆蓋面積較小、成本降低以及效能改良而可取代傳統的離散的表面安裝元件(surface mount devices；SMDs)。
接下來，在圖16中，翻轉圖15中所示出的半導體結構，且外部連接件163附著至例如由框架153支撐的切割帶151。接下來，在載子剝離製程中移除載子135。作為實例，載子135可藉由 化學濕式蝕刻、電漿乾式蝕刻、機械剝落、CMP、機械研磨、熱烘烤、雷射掃描或濕式剝除來剝離。在一些實施例中，載子135為玻璃載子且藉由在玻璃載子上照射UV光來剝離。在載子剝離之後，開口138形成於背側介電層139中以暴露導電柱141。開口138可藉由蝕刻製程、雷射鑽孔製程或其他合適的製程形成。圖16中所示出的半導體結構包括多個半導體封裝體510。在後續製程中，沿切割線154切割圖16中所示出的半導體結構以形成多個單獨的半導體封裝體510(亦稱為底部封裝體，見圖17)。
接下來，在圖17中，多個半導體封裝體520(亦稱為頂部封裝體)附著至圖16中所示出的半導體結構。多個半導體封裝體520中的每一者與對應的半導體封裝體510對準，以使半導體封裝體520的外部連接件274的位置匹配導電柱141的頂部表面的位置。每一半導體封裝體520可包含附著至基底271的一或多個晶粒279，其中模製化合物277圍繞晶粒279。基底271具有分別位於基底271的上部表面及下部表面上的導電墊273及導電墊275。導電特徵278(例如，金屬線、通孔)可形成於基底271中且使導電墊273與導電墊275電耦接。在一些實施例中，在附著半導體封裝體520之前，使用例如焊料印刷機將焊錫膏136沈積於導電柱141的暴露的頂部表面上。在半導體封裝體520附著至半導體封裝體510之後，可執行回焊製程以將半導體封裝體520接合至各別半導體封裝體510。可形成底膠材料166以填充半導體封裝體510與半導體封裝體520之間的間隙。
接下來，執行切割製程以形成具有PoP結構的多個單獨的半導體封裝體500。圖17示出PoP封裝體500，其包含接合至 底部封裝體510的頂部封裝體520。頂部封裝體520可為記憶體元件且包含多個記憶體晶粒(例如，晶粒279)，底部封裝體510可為邏輯元件且包含SoIC 150(見圖11)。
圖18示出根據實施例的半導體封裝體510A的橫截面視圖。半導體封裝體510A類似於圖17中的半導體封裝體510，但具有不同的SoIC 150A(見虛線矩形)。SoIC 150A類似於圖11中的SoIC 150，但具有以背對面接合組態而附著至頂部晶粒50的第三晶粒21，所述背對面接合組態例如是使用熔融接合製程。如圖18中所示出，SoIC 150A更包含第三晶粒21與頂部晶粒50之間的重佈線結構158、位於重佈線結構158上且圍繞第三晶粒21的介電材料159以及導電柱132。導電柱132延伸穿過多個介電層(介電材料133/介電材料159)且穿過重佈線結構158，且將底部晶粒100電耦接至重佈線結構148。重佈線結構158及介電材料159可分別使用與重佈線結構148及介電材料133的形成方法相同或類似的形成方法來形成，因此並未重複細節。
在一些實施例中，在形成介電材料159及介電材料133之後，例如使用鑲嵌或雙鑲嵌製程在單製程步驟中形成導電柱132。在圖18的實例中，底部晶粒100經由導電柱131及重佈線結構158與頂部晶粒50連通；且底部晶粒50經由導電柱132及重佈線結構148與晶粒21連通。
圖19A及圖19B示出根據實施例的半導體結構510B的橫截面視圖。半導體封裝體510B類似於圖17中的半導體封裝體510，但具有不同的SoIC 150B(見虛線矩形)。圖19A為沿圖19B中的橫截面A-A的半導體結構5l0B的橫截面視圖。
SoIC 150B類似於圖11的SoIC 150，但具有附著至底部晶粒100的大於一個頂部晶粒50。圖19A示出附著至底部晶粒100的四個頂部晶粒50作為非限制性實例。可將大於或小於四個頂部晶粒50附著至底部晶粒100，此等及其他變化全部意欲包含於本揭露內容的範圍內。圖19A及圖19B進一步示出圍繞頂部晶粒50且在頂部晶粒50之間形成的導電柱131。
圖20A及圖20B示出根據實施例的半導體結構510C的橫截面視圖。半導體封裝體510C類似於圖19A及圖19B中的半導體結構510B，但具有不同的SoIC 150C(見虛線矩形)。圖20A為沿圖20B中的橫截面B-B的半導體結構510C的橫截面視圖。
SoIC 150C類似於圖19A及圖18B的SoIC 150B，但不具有設置於頂部晶粒50之間的導電柱131。換言之，導電柱131僅圍繞圖20A及圖20B的實施例中的頂部晶粒50設置。
圖21至圖27示出根據實施例的在各種製造階段上的積體晶片上系統(SoIC)150D的橫截面視圖。特定而言，圖21至圖27示出用於形成SoIC的方法，其中晶粒連接件55及導電柱131形成於相同製程步驟中。
參考圖21，形成具有元件區40的基底51(例如，頂部晶圓)、第一鈍化層(未繪示)以及導電墊(例如鋁墊，未繪示)。基底51包括多個頂部晶粒50。注意，在此製程階段，並未形成第二鈍化層52及晶粒連接件55(見圖1)。經由導電墊執行電路探測處理以識別基底51中的已知良好晶粒。為簡單起見，元件區40可能未在後續圖式中示出。
接下來，在圖22中，使用例如黏著劑層56(諸如DAF) 將基底51的前側附著至載子57。接下來，在圖23中，在基底51的背側處執行薄化製程以將基底51的厚度減小至例如約1微米與約100微米之間，諸如約40微米。作為實例，可使用研磨製程及/或CMP製程來執行薄化製程。
在薄化製程之後，視情況選用的氮化物層59(諸如氮化矽層)形成於基底51的背側上。如上文所論述，氮化物層59可用以在後續熔融接合製程中形成頂部晶粒50與底部晶粒100之間的更強接合。在一些實施例中，省略氮化物層59。
接下來，基底51附著至由框架63支撐的切割帶61。剝離載子57，且執行清潔製程(例如，DAF清潔製程)以移除黏著劑層56的殘留物。接著切割基底51以形成多個頂部晶粒50。
接下來，在圖25中，頂部晶粒50(例如，已知良好頂部晶粒50)的背側經由熔融接合製程以背對面接合組態接合至底部晶圓100'的前側。在一些實施例中，頂部晶粒50接合至底部晶圓100'的最頂部介電層的不具有接合墊107的區域。
在一些實施例中，在頂部晶粒50接合至底部晶圓100'之前，使用拋棄式探測墊遵循例如圖4至圖7中所示出的製程來測試底部晶圓100'。測試之後的底部晶圓100'的結構可與圖7、圖8或圖9中所示出的彼等結構相同或類似。
接下來，在圖26中，導電柱55形成於頂部晶粒50上且導電柱131形成於接合墊107上。導電柱55電耦接至頂部晶粒50的導電墊且充當晶粒連接件。在一些實施例中，導電柱131及導電柱55使用類似於上文針對圖10中的導電柱131描述的彼等方法的方法形成於相同製程步驟中，因此並未重複細節。
接下來，在圖27中，介電材料133形成於底部晶圓100'上方且圍繞頂部晶粒50並圍繞導電柱131/導電柱55，所述介電材料可為諸如聚醯亞胺、低溫聚醯亞胺、PBO或類似者的聚合物。可執行諸如CMP的平坦化製程來使介電材料133平坦化。接下來，執行切割製程以使底部晶圓100'單體化且形成多個SoIC 150D，其中每一SoIC 150D包含接合至底部晶粒100的頂部晶粒50。如圖27中所示出，介電材料133與底部晶粒100側向地共端。
圖28至圖33示出根據實施例的在各種製造階段上的積體晶片上系統(SoIC)150E的橫截面視圖。特定而言，圖28至圖33示出用於形成SoIC的方法，其中使用黏著劑膜54以將頂部晶粒50接合至底部晶粒100。
參考圖28，形成具有元件區40的基底51(例如，頂部晶圓)、第一鈍化層(未繪示)、導電墊(例如鋁墊，未繪示)以及晶粒連接件55。基底51包括多個晶粒(例如，頂部晶粒50)。經由晶粒連接件55執行電路探測處理以識別基底51中的已知良好晶粒。在電路探測處理之後，第二鈍化層52形成於基底51上方。為簡單起見，元件區40可能未在後續圖式中示出。
接下來，在圖29中，載子57使用黏著劑層56附著至第二鈍化層，且自基底51的背側執行薄化製程以將基底51的厚度減小至約1微米與約100微米之間的值，諸如約40微米。
接下來，在圖30中，基底51附著至切割帶61，且執行切割製程以使基底51單體化且形成多個頂部晶粒50。
接下來，在圖31中，使用拋棄式探測墊遵循例如圖4至圖7中所示出的處理過程來測試底部晶圓100'。測試之後的底部 晶圓100'的結構可與圖7、圖8或圖9中所示出的彼等結構相同或類似。接下來，使用與上文在圖10中所描述的相同或類似的製程在底部晶圓100'的接合墊107上形成導電柱131。
接下來，在圖32中，形成於圖30中的頂部晶粒50(例如，已知良好頂部晶粒50)使用黏著劑膜54(諸如DAF)附著至底部晶圓100'的前側。在一些實施例中，頂部晶粒50附著至底部晶圓100'的最頂部介電層的不具有接合墊107的區域。
接下來，在圖33中，介電材料133形成於底部晶圓100'上，所述介電材料可為聚醯亞胺、低溫聚醯亞胺、模製材料或類似者。介電材料包圍頂部晶粒50及導電柱131。在介電材料133形成之後，執行切割製程以使底部晶圓100'單體化且形成多個SoIC 150E。
圖34至圖36、圖37A、圖37B以及圖38至圖42示出根據實施例的在各種製造階段上的半導體結構220(見圖41及圖42)的橫截面視圖。半導體結構220具有基底上晶圓上晶片(CoWoS)結構，所述基底上晶圓上晶片結構包含附著至基底201的晶圓上晶片(CoW)結構190(見圖40)，下文中描述其細節。
參考圖34，多個頂部晶粒50使用熔融接合製程以背對面接合組態接合至底部晶圓100'。上文已論述熔融接合製程及背對面接合組態，因此可能未重複細節。頂部晶粒50可遵循如圖1至圖3中所示出的相同或類似製程形成。底部晶圓100'可與圖10的底部晶圓100'相同或類似。在一些實施例中，在頂部晶粒50接合至底部晶圓100'之前，使用拋棄式探測墊遵循如圖4至圖7中所示出的相同或類似處理過程來測試底部晶圓100'。
在一些實施例中，在頂部晶粒50接合至底部晶圓100'之後，介電材料134圍繞頂部晶粒50形成於底部晶圓100'上。在所示出的實施例中，介電材料134為諸如氧化矽的氧化物，且藉由諸如PCV、CVD或類似者的合適的形成方法形成。使用氧化物作為介電材料134允許待隨後形成具有精細間距(例如，在約5微米與約30微米之間的間距)的導電柱131(下文中論述)。儘管將氧化物用作介電材料134的實例，但介電材料134可由其他合適的材料形成，諸如聚合物或模製材料。在將聚合物或模製材料用作介電材料134的實施例中，隨後形成的導電柱131之間的間距可更大，諸如在約50微米與約100微米之間。
接下來，使用例如微影及蝕刻技術(例如，乾式蝕刻)在介電材料134中形成開口。開口延伸穿過介電材料134且暴露下伏接合墊107。接下來，諸如銅的導電材料形成於開口中以填充開口，由此形成導電柱131(亦可被稱為通孔)。作為實例，可藉由鍍覆製程(例如，電鍍或無電式鍍覆)形成導電材料，但亦可使用其他合適的方法。
在形成導電柱131之後，可執行諸如CMP的平坦化製程以達成介電材料134的水平上部表面。在平坦化製程之後，導電柱131的上部表面及頂部晶粒50的晶粒連接件55的上部表面暴露於介電材料134的上部表面處。在一些實施例中，在平坦化製程之後頂部晶粒50的及/或導電柱131的高度H4在約10微米與約100微米之間，諸如約30微米。導電柱131的寬度可在約10微米與約50微米之間，諸如約30微米，且相鄰導電柱之間的間距可在約20微米與約100微米之間，諸如約70微米。
接下來，如圖35中所示出，重佈線結構148形成於介電材料134上方且電耦接至導電柱131及頂部晶粒50。重佈線結構148包含多個介電層145及形成於介電層145中的導電特徵(例如，導電線147及通孔149)。諸如微凸塊的外部連接件144形成於重佈線結構148上方且電耦接至重佈線結構148的導電特徵。圖35中的重佈線結構148的形成可與圖15中的重佈線結構148的彼等形成相同或類似，因此此處並未重複細節。接下來，執行切割製程以使底部晶圓100'單體化且形成多個SoIC 150F。圖35示出在切割製程之後形成的SoIC 150F。在圖35的實例中，重佈線結構148及介電材料134與底部晶粒100側向地共端。
在一些實施例中，調整用來形成圖35的重佈線結構148的介電層145的材料，以適應關於重佈線結構148的線間隔(例如，相鄰導電線之間的間隔)的不同設計目標。舉例而言，為達成0.8微米或小於0.8微米的線間隔，可使用氧化物(例如，氧化矽、未摻雜矽酸鹽玻璃(USG)或類似者)來形成介電層145。為達成10微米或大於10微米的線間隔，可使用聚合物(例如，聚醯亞胺、LPTI或類似者)來形成介電層145。
在一些實施例中，當使用氧化物來形成介電層145時，可使用類似於鑲嵌製程的彼等製程步驟的製程步驟來形成導電特徵(例如，線)且達成0.8微米或小於0.8微米的精細線間隔。舉例而言，在藉由例如CVD形成氧化物之後，圖案化光阻(例如，具有高解析度的高品質光阻)形成於氧化物上方。接下來，使用圖案化光阻作為蝕刻罩幕來執行乾式蝕刻製程以在氧化物中形成開口。接下來，移除圖案化光阻(例如，藉由灰化或剝除)，且障 壁層/晶種層形成於氧化物中的開口中。接下來，執行諸如電化學鍍覆的鍍覆製程以使用導電材料(例如，銅)填充開口，且接著執行CMP以移除開口外部的導電材料的部分。開口中的導電材料的剩餘部分藉此形成導電特徵。
在一些實施例中，當使用聚合物來形成介電層145時，歸因於聚合物的物理性質(例如，相較於氧化物更軟)，可遵循上文參考圖15所論述的相同或類似製程步驟來形成重佈線結構148的導電特徵(例如，線、通孔)。形成於聚合物層上方的光阻亦可能具有較低品質及較低解析度。因此，當將聚合物用作重佈線結構148的介電層145時線間隔較大(例如，10微米或大於10微米)。
接下來，在圖36中，多個SoIC 150F藉由將SoIC 150F的外部連接件144(見圖35)接合至中介物170的上部表面處的外部連接件174(例如微凸塊，見圖37A)來附著至中介物170。在SoIC 150F附著至中介物170之後，底膠材料169可形成於SoIC 150F與中介物170之間。
圖37A示出具有更多細節的圖36中的中介物170的橫截面視圖。圖37B為中介物170的一部分的放大視圖。參考圖37A，中介物170包括基底171、基底171中的基底穿孔(through-substrate vias；TSVs)172、重佈線結構173以及外部連接件174。
參考圖37B，基底171可為例如摻雜或未摻雜的矽基底，或絕緣層上矽(silicon-on-insulator；SOI)基底的主動層。然而，基底171可替代地為玻璃基底、陶瓷基底、聚合物基底或可提供合適的保護及/或內連功能性的任何其他基底。此等及任何其他合適的材料可替代地用於基底171。
在一些實施例中，基底171可包含電組件，諸如電阻器、電容器、訊號分佈電路、此等的組合或類似者。此等電組件可為主動的、被動的或其組合。在其他實施例中，基底171在其中無主動電組件及被動電組件兩者。所有此類組合全部意欲包含於實施例的範圍內。
TSV 172可藉由在基底171中形成開口且使用導電材料填充開口來形成。在所示出的實施例中，開口在不延伸穿過基底171的情況下延伸至基底171中。TSV 172的開口可內襯有襯裡172L且填充有導電材料175。在實施例中，襯裡172L為藉由諸如化學氣相沈積、氧化、物理氣相沈積、原子層沈積或類似者的製程來形成的介電材料，諸如氮化矽、氧化矽、介電聚合物、此等的組合或類似者。
在一些實施例中，導電材料175可包括銅，但可替代地利用其他合適的材料，諸如鋁、鎢、合金、摻雜多晶矽、其組合，以及類似者。導電材料175可藉由以下步驟形成：沈積晶種層且接著將銅電鍍至晶種層上，填充且過量填充TSV 172的開口。接著可執行諸如CMP的平坦化製程，以移除設置於TSV 172的開口外部的導電材料175的過剩部分。
在所示出的實施例中，在平坦化製程之後，仍沿基底171的上部表面的襯裡172L具有在約0.7微米與約0.8微米之間的厚度，諸如0.75微米，且沿開口的側壁的襯裡172L具有更大厚度，例如約1微米。TSV 172在最初形成之後未延伸穿過基底171，如圖37B中所示出。在實施例中，TSV 172的寬度在約5微米與約20微米之間，且TSV 172的高度H5在約50微米與約150微米 之間。
接下來，重佈線結構173形成於基底171上方且電耦接至TSV 172。可使用與圖15中的重佈線結構148相同或類似的方法來形成重佈線結構173，因此可能未重複細節。在圖37B的實例中，重佈線結構173包含介電層176/介電層177/介電層178以及導電特徵，諸如導電線179L及通孔179V。在實施例中，介電層176由氮化矽(例如，SiN)形成，介電層177由碳化矽(例如，SiC)形成，且介電層178由USG形成。
接下來，介電層181(例如，氧化物層)形成於重佈線結構173上方，且通孔188形成於介電層181中且電耦接至重佈線結構173的導電特徵。接下來，導電墊189(例如，鋁墊)形成於介電層181上方且電耦接至通孔188。第一鈍化層183(例如，氧化物層)形成於介電層181上方且覆蓋導電墊189的周邊部分。第二鈍化層185(例如，SiN層)形成於第一鈍化層183上方。形成延伸穿過第二鈍化層185且電耦接至各別導電墊189的外部連接件174(其可包含導電凸塊174A(例如，微凸塊、銅柱)及焊料蓋174B)。凸塊下金屬(Under-bump-metallurgy；UBM)結構182可形成於外部連接件174與導電墊189之間。
接下來參考圖38，模製材料191形成於中介物170上方且圍繞SoIC 150F。可執行諸如CMP的平坦化製程以移除沈積的模製材料191的過剩部分。平坦化製程亦可暴露SoIC 150F的背側。模製材料191實體地接觸SoIC 150F的重佈線結構148(見圖35)的側壁、介電材料134(見圖35)的側壁以及底部晶粒100的側壁。
接下來，在圖39中，載子193附著至模製材料191，且例如經由背側研磨執行薄化製程以減小基底171的厚度。在背側薄化製程之後，TSV 172暴露於基底171的表面171B處。接下來，諸如C4凸塊的導電凸塊195形成於TSV 172的被暴露的末端表面上。
接下來，在圖40中，圖39中的半導體結構附著至由框架194支撐的載帶192，且執行切割製程以使中介物170單體化且形成多個晶圓上晶片(CoW)結構190，其中CoW結構190中的每一者包含接合至中介物的一或多個SoIC 150F。
接下來，在圖41中，圖40的CoW結構190例如藉由將CoW結構190的導電凸塊195接合至基底201的上部表面上的導電墊203來接合至基底201，藉此形成基底上晶圓上晶片(CoWoS)結構220。底膠材料204可形成於CoW結構190與基底201之間的間隙中。
在一些實施例中，基底201為多層電路板(例如，印刷電路板(Printed Circuit Board；PCB))。在一些實施例中，基底201包含雙順丁烯二醯亞胺三嗪(bismaleimide triazine；BT)樹脂、FR-4(由具有耐火的環氧樹脂黏合劑的編織玻璃纖維布構成的複合材料)、陶瓷、玻璃、塑膠、載帶、膜或其他支撐材料。基底201可包含形成於基底201中/所述基底上的導電特徵(例如，導電線及通孔)。如圖41中所示出，基底201具有形成於基底201的上部表面及下部表面上的導電墊203，導電墊203電耦接至基底201的導電特徵。
接下來，在圖42中，封蓋(lid)211使用例如黏著劑附 著至基底201的上部表面。封蓋211可包含環繞CoWoS結構220的側壁部分211S，以及CoWoS結構220上方的頂部部分211T。封蓋211可由具有良好熱導率的材料(例如，金屬)形成且可充當熱耗散元件。封蓋211亦為CoWoS結構220提供保護。圖42進一步示出封蓋211的頂部部分211T與CoW結構190之間的熱界面材料(Thermal Interface Material；TIM)213。TIM 213可包含聚合物、樹脂或環氧樹脂作為基礎材料，且可包含填充劑以改良其熱導率。填充劑可包含介電填充劑，諸如氧化鋁、氧化鎂、氮化鋁、氮化硼以及金剛石粉劑。填充劑亦可為金屬填充劑，諸如銀、銅、鋁或類似者。
圖43至圖46、圖47A、圖47B、圖48、圖49以及圖50A至圖50C示出積體晶片上系統(SoIC)的各種實施例的橫截面視圖。圖43至圖46、圖47A、圖47B、圖48、圖49以及圖50A至圖50C中所示出的SoIC可用以形成各種半導體結構，諸如CoWoS結構220及半導體封裝體510。
圖43示出SoIC 150G的橫截面視圖，所述SoIC 150G包含晶粒301以及晶粒302，所述晶粒301的前側處具有內連線結構310，所述晶粒302的背側附著至內連線結構310。舉例而言，可使用熔融接合製程藉由形成於晶粒302的材料(例如，矽)與內連線結構310的最上部介電層的材料(例如，氧化物)之間的矽至氧化物(silicon-to-oxide)接合來接合晶粒302。內連線結構310可與圖7、圖8或圖9中所示出的內連線結構105相同或類似，且包含形成於多個介電層311中的導電特徵，諸如導電線315、通孔313以及接合墊317。
SoIC 150G更包含圍繞晶粒302的介電層321，以及包埋於介電層321中的導電柱323。介電層321可由合適的材料形成，諸如氧化物(例如，氧化矽)、諸如聚醯亞胺或LTPI的聚合物、模製材料或類似者。導電柱323延伸穿過介電層321且可具有例如約10微米與約200微米之間的高度。
圖43進一步示出與圖15中所示出的重佈線結構148相同或類似的重佈線結構331。諸如微凸塊、C4凸塊、BGA或類似者的導電凸塊335形成於重佈線結構331上方且電耦接至所述重佈線結構。在圖43的實例中，晶粒301及晶粒302經由重佈線結構331及導電柱323連通。
圖44示出SoIC 150H的橫截面視圖，其類似於圖43中的SoIC 150G。然而，圖44中的晶粒302經由黏著劑膜318(諸如DAF)接合至晶粒301。
圖45示出SoIC 150I的橫截面視圖，其類似於圖43中的SoIC 150G，但具有額外的垂直堆疊層(level)。特定而言，在重佈線結構331形成於介電層321上方之後，晶粒303使用背對面接合組態(例如，使用熔融接合製程)接合至重佈線結構331，且介電層321A(其可與介電層321相同或類似)形成於重佈線結構331上方。在實施例中，在形成介電層321A之後，導電柱324(其可包含上部部分324U及下部部分324L)在單一製程步驟中使用例如雙鑲嵌製程或鑲嵌製程延伸穿過介電層321/介電層321A而形成。注意，在圖45的實例中，導電柱323在介電層321形成之後及重佈線結構331形成之前形成。在導電柱324形成之後，重佈線結構341形成，且隨後導電凸塊335形成於重佈線結構341 上方且電耦接至重佈線結構341。
圖46示出SoIC 150J的橫截面視圖，其類似於圖45中的SoIC 150I，但具有額外的垂直堆疊層。舉例而言，相較於圖45中所繪示的SoIC 150I，形成額外晶粒(例如，晶粒304及晶粒305)及額外重佈線結構(例如，重佈線結構351及重佈線結構361)。注意，在圖46中，導電柱324中的每一者延伸穿過兩個相鄰介電層，且可形成於單一製程步驟(例如，雙鑲嵌製程)中。
圖47A及圖47B示出SoIC 150K的橫截面視圖，其類似於圖43中的SoIC 150G，但具有在相同垂直層中側向並排設置的大於一個晶粒(見圖47A中的晶粒302、晶粒303、晶粒304以及晶粒305)。圖47A繪示沿圖47B中的橫截面C-C的SoIC 150K的橫截面視圖。在圖47A及圖47B的實例中，四個晶粒302至晶粒305(例如，使用熔融接合製程)接合至晶粒301的前側，其中多個導電柱323圍繞晶粒302至晶粒305形成。儘管圖47A中未在晶粒302至晶粒305之間示出導電柱323，但在其他實施例中導電柱323可形成於晶粒302至晶粒305之間。
圖48示出SoIC 150L的橫截面視圖，其類似於圖47A及圖47B中的SoIC 150K，但具有額外的垂直堆疊層。特定而言，四個額外晶粒306、晶粒307、晶粒308以及晶粒309(例如，使用熔融接合製程)接合至重佈線結構331。注意，晶粒308及晶粒309並未處於圖48的橫截面中，因此並未在圖48中示出。另外，介電層321A、重佈線結構341以及導電柱323形成於重佈線結構331上方。
圖49示出SoIC 150M的橫截面視圖，其類似於圖48中 的SoIC 150L，但具有接合至重佈線結構331的一個晶粒306(而非四個晶粒306至晶粒309)。
圖50A及圖50B示出SoIC 150N的橫截面視圖，其類似於圖46中的SoIC 150J，但具有取代圖46中的導電柱323及導電柱324的預先形成的連接件晶片325。圖50A為沿圖50B中的橫截面D-D的SoIC 150N的橫截面視圖。
如圖50A及圖50B中所示出，預先形成的連接件晶片325取代介電層321以及介電層321A至介電層321C中的導電柱。舉例而言，在晶粒302例如使用熔融接合製程而接合至晶粒301的內連線結構310之後，預先形成的連接件晶片325緊鄰晶粒302附著至內連線結構310。連接件晶片325附著於預定位置處以使得連接件晶片325的多個通孔329(亦可被稱為導電柱)與內連線結構310的各別接合墊317對準且(例如，實體地)接觸各別接合墊317。
參考圖50C，其繪示連接件晶片325的橫截面視圖。預先形成的連接件晶片325具有基底327，所述基底具有延伸穿過基底327的通孔329。基底327可為塊狀材料，諸如塊狀矽，但亦可使用其他塊狀材料，諸如玻璃、陶瓷、聚合物或類似者。通孔329由導電材料形成，諸如銅、鎢、鋁或類似者。在一些實施例中，基底327不含任何其他主動電組件或被動電組件，諸如電晶體、電容器或類似者。圖50A繪示連接件晶片325的頂視圖。圖50A及圖50B中所示出的每一連接件晶片325中的通孔329的數目及通孔329的位置為非限制性實例。其他數目及其他位置亦為可能的且全部意欲包含於本揭露內容的範圍內。
返回參考圖50A及圖50B，在附著預先形成的連接件晶片325之後，介電層321形成於晶粒301上且圍繞晶粒302並圍繞連接件晶片325。可執行CMP製程以使介電層321平坦化，且接著在介電層321上方形成重佈線結構331。可重複類似製程以在重佈線結構331上方形成額外層，以完成SoIC 150N的製造。
圖51示出在一些實施例中的用於形成半導體結構的方法的流程圖。應理解，圖51中所繪示的實施例方法僅為諸多可能的實施例方法的實例。所屬技術領域中具有通常知識者將認識到諸多變化、替代物以及修改。舉例而言，可添加、移除、取代、重新配置以及重複如圖51中所示出的各種步驟。
參考圖51，作為步驟1010，多個頂部晶粒的多個背側附著至底部晶圓的前側，底部晶圓包括多個底部晶粒。在步驟1020處，多個第一導電柱鄰近於多個頂部晶粒形成於底部晶圓的前側上。在步驟1030處，第一介電材料圍繞多個頂部晶粒且圍繞多個第一導電柱形成於底部晶圓的前側上。在步驟1040處，切割底部晶圓以形成多個結構，多個結構中的每一者包括多個頂部晶粒中的至少一者及多個底部晶粒中的至少一者。
實施例可達成優點。舉例而言，SoIC中的晶粒經由SoIC中的導電柱及重佈線結構彼此連通，且不需要延伸穿過晶粒的基底穿孔(TSV)以形成SoIC，此簡化晶粒的製造，降低晶粒的生產成本，且允許將各種類型的晶粒(例如，邏輯晶粒、記憶體晶粒)整合在一起以形成SoIC。如藉由各種實施例所示出的SoIC的可撓性結構允許SoIC的可撓性大小及可撓性功能整合以達成高整合密度。可將形成的SoIC整合於不同封裝類型中，諸如具有 CoWoS結構的封裝體、覆晶封裝體或積體扇出型(InFO)封裝件。藉由在重佈線結構中使用氧化物，達成了重佈線結構的導電線之間的精細間距(例如，
Figure 108125768-A0305-02-0038-1
0.8微米的線間隔)，此在先前可能不可達成。藉由在頂部晶粒的背側上形成氮化物層，達成了熔融接合製程的更大接合強度。
根據實施例，一種形成半導體結構的方法包含：將多個頂部晶粒的多個背側附著至底部晶圓的前側，底部晶圓包括多個底部晶粒；在底部晶圓的前側上形成鄰近於多個頂部晶粒的多個第一導電柱；在底部晶圓的前側上形成圍繞多個頂部晶粒且圍繞多個第一導電柱的第一介電材料；以及切割底部晶圓以形成多個結構，多個結構中的每一者包括多個頂部晶粒中的至少一者及多個底部晶粒中的至少一者。在實施例中，所述方法更包含，在附著之前，經由設置於底部晶圓的前側處的多個拋棄式探測墊來測試底部晶圓。在實施例中，所述方法更包含在測試之後及在附著之前：自底部晶圓移除多個拋棄式探測墊；在移除多個拋棄式探測墊之後在底部晶圓的前側上方形成介電層；以及形成延伸穿過介電層且電耦接至多個底部晶粒的多個接合墊，其中多個第一導電柱形成於多個接合墊中的各別者上方。在實施例中，多個頂部晶粒的多個背側經由熔融接合製程附著至底部晶圓的前側。在實施例中，多個頂部晶粒的多個背側實體地接觸底部晶圓。在實施例中，所述方法更包含在將多個頂部晶粒的多個背側附著至底部晶圓的前側之前，在多個頂部晶粒的多個背側上形成氮化物層。在實施例中，將多個頂部晶粒的多個背側附著至底部晶圓的前側包含使用黏著劑膜將多個頂部晶粒的多個背側附著至底部晶圓的 前側。在實施例中，第一介電材料為氧化物，且在多個第一導電柱形成之前形成於底部晶圓的前側上。在實施例中，形成多個第一導電柱包含：在第一介電材料中形成多個開口，多個開口暴露底部晶圓的前側處的多個導電特徵；以及使用導電材料填充多個開口。在實施例中，所述方法更包含在切割底部晶圓之前，在第一介電材料上形成重佈線結構。在實施例中，所述方法更包含在切割底部晶圓之後：將多個結構中的一或多者接合至中介物的第一側；在中介物的第二相對側上形成多個外部連接件；以及將中介物的多個外部連接件接合至基底。在實施例中，所述方法更包含圍繞中介物且在中介物上方將封蓋附著至基底。在實施例中，所述方法更包含在切割底部晶圓之後：將多個結構附著至載子；在載子上形成鄰近於多個結構的多個第二導電柱；在載子上形成圍繞多個結構且圍繞多個第二導電柱的模製材料；以及在模製材料上方形成重佈線結構。
根據實施例，一種形成半導體結構的方法包含：形成積體電路元件，其中形成積體電路元件包含：將第二晶粒的背側附著至第一晶粒的前側，其中第一晶粒具有位於第一晶粒的前側處的多個第一導電墊，多個第一導電墊設置於第二晶粒的邊界外部；在第一晶粒的前側上且圍繞第二晶粒形成介電材料；在介電材料中形成多個第一導電柱且多個第一導電柱電耦接至第一晶粒的多個第一導電墊；在介電材料上形成重佈線結構且重佈線結構電耦接至第二晶粒及多個第一導電柱；以及在重佈線結構上方形成多個連接件；將積體電路元件的多個連接件附著至中介物的第一側；以及在中介物的第一側上形成圍繞積體電路元件的模製材 料；以及在中介物的第二側上形成多個導電凸塊。在實施例中，所述方法更包含：將中介物的第二側上的多個導電凸塊接合至基底；以及將封蓋附著至基底，其中積體電路元件及中介物設置於封蓋與基底之間的封閉空間中。在實施例中，所述方法更包含：在形成模製材料之後及在形成多個導電凸塊之前，將模製材料的第一側附著至載子，模製材料的第一側遠離插入件；以及研磨中介物的第二側以減小中介物的厚度，其中在研磨之後，暴露出嵌於中介物中的多個穿孔的多個第一末端表面，其中多個導電凸塊形成於多個穿孔的多個第一末端表面上。在實施例中，將第二晶粒的背側附著至第一晶粒的前側包含：在第二晶粒的背側上形成氮化物層；以及在形成氮化物層之後，執行熔融接合製程以將第二晶粒的背側上的氮化物層接合至第一晶粒的前側。
根據實施例，一種半導體結構包含：第一晶粒，具有位於第一晶粒的第一側處的多個第一導電墊；第二晶粒，具有背對第一晶粒的第一側且具有附著至第一晶粒的第一側的第二側，第二晶粒具有位於第二晶粒的第一側處的多個第二導電墊；第一導電柱，附著至第一晶粒的多個第一導電墊的一者且鄰近於第二晶粒；第一介電材料，位於第一晶粒的第一側上且圍繞第二晶粒並圍繞第一導電柱，其中第一介電材料與第一晶粒共端；重佈線結構，位於第一介電材料上且電耦接至第一導電柱及第二晶粒的多個第二導電墊；以及多個外部連接件，位於重佈線結構的第一側上，重佈線結構的第一側背對第二晶粒。在實施例中，半導體結構更包含：模製材料，圍繞第一晶粒、第二晶粒以及第一介電材料；以及第二導電柱，位於模製材料中且電耦接至重佈線結構。 在實施例中，第二晶粒的第二側接觸第一晶粒的第一側。
前文概述若干實施例的特徵，以使所屬技術領域中具有通常知識者可更好地理解本揭露內容的態樣。所屬技術領域中具有通常知識者應理解，其可易於使用本揭露內容作為設計或修改用於實現本文中所引入的實施例的相同目的及/或達成相同優點的其他製程及結構的基礎。所屬技術領域中具有通常知識者亦應認識到，此類等效構造並不脫離本揭露內容的精神及範圍，且所屬技術領域中具有通常知識者可在不脫離本揭露內容的精神及範圍的情況下在本文中作出各種改變、替代以及更改。
50:頂部晶粒
52:第二鈍化層
55:晶粒連接件
100':底部晶圓
101:基底
105:內連線結構
107:接合墊
131:導電柱
H2:高度

Claims (13)

  1. 一種形成半導體結構的方法，所述方法包括：將多個頂部晶粒的多個背側附著至底部晶圓的前側，所述底部晶圓包括多個底部晶粒；在所述底部晶圓的所述前側上形成鄰近於所述多個頂部晶粒的多個第一導電柱；在所述底部晶圓的所述前側上形成圍繞所述多個頂部晶粒且圍繞所述多個第一導電柱的第一介電材料；以及切割所述底部晶圓以形成多個結構，所述多個結構中的每一者包括所述多個頂部晶粒中的至少一者及所述多個底部晶粒中的至少一者。
  2. 如申請專利範圍第1項所述的形成半導體結構的方法，更包括：在所述附著之前，經由設置於所述底部晶圓的所述前側處的多個拋棄式探測墊來測試所述底部晶圓。
  3. 如申請專利範圍第1項所述的形成半導體結構的方法，其中所述多個頂部晶粒的所述多個背側經由熔融接合製程附著至所述底部晶圓的所述前側。
  4. 如申請專利範圍第3項所述的形成半導體結構的方法，其中所述多個頂部晶粒的所述多個背側實體地接觸所述底部晶圓。
  5. 如申請專利範圍第3項所述的形成半導體結構的方法，更包括在將所述多個頂部晶粒的所述多個背側附著至所述底部晶圓的所述前側之前，在所述多個頂部晶粒的所述多個背側上形成 氮化物層。
  6. 如申請專利範圍第1項所述的形成半導體結構的方法，其中將所述多個頂部晶粒的所述多個背側附著至所述底部晶圓的所述前側包括使用黏著劑膜將所述多個頂部晶粒的所述多個背側附著至所述底部晶圓的所述前側。
  7. 如申請專利範圍第1項所述的形成半導體結構的方法，其中所述第一介電材料為氧化物，且在所述多個第一導電柱形成之前形成於所述底部晶圓的所述前側上。
  8. 如申請專利範圍第1項所述的形成半導體結構的方法，更包括在切割所述底部晶圓之後：將所述多個結構附著至載子；在所述載子上形成鄰近於所述多個結構的多個第二導電柱；在所述載子上形成圍繞所述多個結構且圍繞所述多個第二導電柱的模製材料；以及在所述模製材料上方形成重佈線結構。
  9. 一種形成半導體結構的方法，所述方法包括：形成積體電路元件，其中形成所述積體電路元件包括：將第二晶粒的背側附著至第一晶粒的前側，其中所述第一晶粒具有位於所述第一晶粒的所述前側處的多個第一導電墊，所述多個第一導電墊設置於所述第二晶粒的邊界外部；在所述第一晶粒的所述前側上且圍繞所述第二晶粒形成介電材料；在所述介電材料中形成多個第一導電柱且所述多個第一導電柱電耦接至所述第一晶粒的所述多個第一導電墊； 在所述介電材料上形成重佈線結構且所述重佈線結構電耦接至所述第二晶粒及所述多個第一導電柱；以及在所述重佈線結構上方形成多個連接件；將所述積體電路元件的所述多個連接件附著至中介物的第一側；以及在所述中介物的所述第一側上形成圍繞所述積體電路元件的模製材料；以及在所述中介物的第二側上形成多個導電凸塊。
  10. 如申請專利範圍第9項所述的形成半導體結構的方法，更包括：將所述中介物的所述第二側上的所述多個導電凸塊接合至基底；以及將封蓋附著至所述基底，其中所述積體電路元件及所述中介物設置於所述封蓋與所述基底之間的封閉空間中。
  11. 如申請專利範圍第9項所述的形成半導體結構的方法，更包括：在形成所述模製材料之後及在形成所述多個導電凸塊之前，將所述模製材料的第一側附著至載子，所述模製材料的所述第一側遠離所述插入件；以及研磨所述中介物的所述第二側以減小所述中介物的厚度，其中在所述研磨之後，暴露出嵌於所述中介物中的多個穿孔的多個第一末端表面，其中所述多個導電凸塊形成於所述多個穿孔的所述多個第一末端表面上。
  12. 一種半導體結構，包括： 第一晶粒，具有位於所述第一晶粒的第一側處的多個第一導電墊；第二晶粒，具有背對所述第一晶粒的第一側且具有附著至所述第一晶粒的所述第一側的第二側，所述第二晶粒具有位於所述第二晶粒的所述第一側處的多個第二導電墊；第一導電柱，附著至所述第一晶粒的所述多個第一導電墊的一者且鄰近於所述第二晶粒；第一介電材料，位於所述第一晶粒的所述第一側上且圍繞所述第二晶粒並圍繞所述第一導電柱，其中所述第一介電材料與所述第一晶粒側向地共端；重佈線結構，位於所述第一介電材料上且電耦接至所述第一導電柱及所述第二晶粒的所述多個第二導電墊；多個外部連接件，位於所述重佈線結構的第一側上，所述重佈線結構的所述第一側背對所述第二晶；模製材料，圍繞所述第一晶粒、所述第二晶粒以及所述第一介電材料；以及第二導電柱，位於所述模製材料中且電耦接至所述重佈線結構粒。
  13. 如申請專利範圍第12項所述的半導體結構，其中所述第二晶粒的所述第二側接觸所述第一晶粒的所述第一側。
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