TWI758129B - 半導體封裝 - Google Patents
半導體封裝 Download PDFInfo
- Publication number
- TWI758129B TWI758129B TW110108963A TW110108963A TWI758129B TW I758129 B TWI758129 B TW I758129B TW 110108963 A TW110108963 A TW 110108963A TW 110108963 A TW110108963 A TW 110108963A TW I758129 B TWI758129 B TW I758129B
- Authority
- TW
- Taiwan
- Prior art keywords
- die
- buffer layer
- sidewall
- layer
- redistribution structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims description 67
- 239000010410 layer Substances 0.000 description 217
- 238000000034 method Methods 0.000 description 35
- 239000000463 material Substances 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- 229910000679 solder Inorganic materials 0.000 description 20
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 16
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 11
- 239000008393 encapsulating agent Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 229910052763 palladium Inorganic materials 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
- H01L2224/091—Disposition
- H01L2224/0918—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/09181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
本發明實施例的一種半導體封裝包括重佈線結構、第一晶粒、第二晶粒以及緩衝層。第二晶粒設置在第一晶粒與重佈線結構之間,並且第二晶粒電連接到第一晶粒且接合到重佈線結構。緩衝層設置在第二晶粒的第一側壁上,其中緩衝層的第二側壁與第一晶粒的第三側壁實質上齊平。
Description
本發明實施例是有關於一種半導體封裝。
由於各種電子元件(例如,電晶體、二極體、電阻器、電容器等)的集成密度的持續提高,半導體行業已經歷快速增長。在很大程度上,集成密度的此種提高是源自最小特徵大小(minimum feature size)的反復減小,此使得更多的較小組件能夠集成到給定面積中。相比於以前的封裝,這些較小的電子元件可能需要利用更少面積的更小的封裝。目前,積體扇出型封裝因其緊湊性而越來越受歡迎。如何確保積體扇出型封裝的可靠性已成為本領域中的一項挑戰。
本發明實施例的一種半導體封裝包括重佈線結構、第一晶粒、第二晶粒以及緩衝層。所述第二晶粒位於所述第一晶粒與所述重佈線結構之間,所述第二晶粒電連接到所述第一晶粒且接合到所述重佈線結構。所述緩衝層設置在所述第二晶粒的第一側
壁上,其中所述緩衝層的第二側壁與所述第一晶粒的第三側壁實質上齊平。
本發明實施例的一種半導體封裝包括重佈線結構、第一晶粒、第二晶粒、緩衝層以及底部填充膠。所述第一晶粒與所述第二晶粒彼此上下堆疊,所述第二晶粒接合到所述重佈線結構。所述緩衝層設置在所述第二晶粒的第一側壁上且延伸到所述第一晶粒的第二側壁的第一部分上。所述底部填充膠與所述緩衝層及所述第一晶粒的所述第二側壁的第二部分接觸。
本發明實施例的一種半導體封裝包括重佈線結構、第一封裝、第二封裝、第一緩衝層以及第二緩衝層。所述重佈線結構接合到基底。所述第一封裝包括第一晶粒及第二晶粒,在所述第一封裝與所述基底之間接合到所述重佈線結構。所述第二封裝接合到所述重佈線結構。所述第一緩衝層設置在所述第二晶粒的側壁上。所述第二緩衝層設置在所述第二封裝的側壁上,其中所述第一緩衝層及所述第二緩衝層設置在所述第一封裝與所述第二封裝之間。
10、12:封裝
20、30:晶粒
20s1、20s2、30s1、30s2、42s1、42s2:側壁
30a、40a、42a:表面
32、202:基底
34、36:電連接件
40:緩衝材料
42:緩衝層
100、200:半導體封裝
102:載體
104:剝離層
110:重佈線結構
112:介電層
114:導電圖案
120:電連接件
130、210:底部填充膠
140:包封體
150:導電焊墊
152:導電端子
204:電介質或聚合物層
206:導電圖案
G:間隙
H:高度
W、W1、W2、W3:寬度
圖1A到圖1C是根據一些實施例的形成晶粒的方法中的各個階段的示意性剖視圖。
圖2A到圖2E是根據一些實施例的製造半導體封裝的方法中
的各個階段的示意性剖視圖。
圖3是根據一些實施例的半導體封裝的示意性俯視圖。
圖4A及圖4B是根據一些實施例的半導體封裝的示意性剖視圖及俯視圖。
圖5A及圖5B是根據一些實施例的半導體封裝的示意性剖視圖及俯視圖。
圖6A及圖6B是根據一些實施例的半導體封裝的示意性剖視圖及俯視圖。
圖7A及圖7B是根據一些實施例的半導體封裝的示意性剖視圖及俯視圖。
圖8A及圖8B是根據一些實施例的半導體封裝的示意性剖視圖及俯視圖。
圖9A及圖9B是根據一些實施例的半導體封裝的示意性剖視圖及俯視圖。
以下公開內容提供用於實施所提供主題的不同特徵的許多不同的實施例或實例。以下闡述元件及佈置的具體實例以簡化本公開。當然,這些僅為實例且不旨在進行限制。舉例來說,以下說明中將第二特徵形成在第一特徵之上或第一特徵上可包括其中第二特徵與第一特徵被形成為直接接觸的實施例,且也可包括其中第二特徵與第一特徵之間可形成有附加特徵從而使得所述第
二特徵與所述第一特徵可不直接接觸的實施例。另外,本公開內容可能在各種實例中重複使用參考編號和/或字母。這種重複使用是出於簡潔及清晰的目的,而不是自身指示所論述的各種實施例和/或配置之間的關係。
此外,為易於說明,本文中可能使用例如“頂部的(top)”、“在...下方(below)”、“下部的(lower)”、“在...上方(above)”、“上部的(upper)”等空間相對性用語來闡述圖中所示的一個元件或特徵與另一(其他)元件或特徵的關係。所述空間相對性用語旨在除圖中所繪示的取向外還囊括裝置在使用或操作中的不同取向。設備可具有其他取向(旋轉90度或處於其他取向)且本文中所用的空間相對性描述語可同樣相應地進行解釋。
緩衝層(應力釋放結構)可確保良好的結構一體性,尤其是在大型中介層封裝中。通過形成鄰近於封裝之間的間隙的一個或多個緩衝層,可釋放由於封裝基底與晶粒之間的熱膨脹係數(coefficient of thermal expansion,CTE)失配引起的應力。圖1A到圖1C是根據一些實施例的形成晶粒的方法中的各個階段的示意性剖視圖。
參照圖1A,提供多個晶粒20。在一些實施例中,提供包括任何數目的晶粒20的晶圓。在一些實施例中,晶粒20由晶粒20之間的切割道(scribe line)區(未示出)隔開。在一些實施例中,晶粒20具有相同的大小(例如,相同的高度和/或表面積)。在替代實施例中,晶粒20具有不同的大小(例如,不同的高度和
/或表面積)。晶粒20包括基底。基底可為塊狀半導體基底、絕緣體上半導體(semiconductor-on-insulator,SOI)基底、或類似基底。基底的半導體材料可為:矽;鍺;化合物半導體,包括矽鍺、碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦、和/或銻化銦;合金半導體,包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP、和/或GaInAsP;或者其組合。也可使用其他基底,例如多層式基底或梯度基底。基底可為摻雜的或未摻雜的。基底可包括可用於為晶粒20產生期望的結構及功能設計的各種各樣的主動裝置(未示出)及被動裝置(未示出)(例如電容器、電阻器、電感器、及類似物)。可使用任何合適的方法在基底的有效表面內或者基底的有效表面上形成主動裝置及被動裝置。在晶粒20是功能晶粒的實施例中,晶粒20包括主動裝置。在晶粒20是中介層的實施例中,晶粒20包括被動裝置或者可省略裝置,使得晶粒20不具有主動裝置。晶粒20還可包括內連結構(未示出)及電連接到內連結構的接合焊墊(未示出)。內連結構可包括形成在有效表面上的一個或多個介電層及相應的導電圖案。介電層中的導電圖案可例如使用通孔和/或導線在裝置之間對電訊號進行繞線,且還可包含各種電性裝置,例如電容器、電阻器、電感器、或類似物。可將各種裝置與導電圖案內連以實行一個或多個功能。所述功能包括記憶體結構、處理結構、感測器、放大器、功率分配(power distribution)、輸入/輸出電路系統、或類似物。
在一些實施例中,晶粒20還包括多個電連接件(未示
出),所述多個電連接件形成且電連接到接合焊墊,以提供通往電路系統及裝置的外部電連接。在一些實施例中,當將晶粒20接合到其他結構時,利用電連接件。在一些實施例中,電連接件是焊料球和/或凸塊,例如無電鍍鎳浸金(electroless nickel immersion Gold,ENIG)、無電鍍鎳鈀浸金(electroless nickel electroless palladium immersion gold,ENEPIG)技術形成的凸塊、或類似物。在此種實施例中,凸塊電連接件包含導電材料,例如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似物、或其組合。在實施例中,通過以合適的方法(例如蒸鍍、電鍍、印刷、焊料轉移、植球、或類似方法)形成焊料的層來形成電連接件。一旦已在結構上形成焊料的層,便可實行回流(reflow),以將材料成形為期望的凸塊形狀。
在替代實施例中,電連接件包括導電柱,導電柱之上具有導電頂蓋層(導電頂蓋層可為焊料頂蓋)。包括導電柱及導電頂蓋層的電連接件有時被稱為微凸塊(micro-bumps)。在一些實施例中,導電柱包含導電材料(例如銅、鋁、金、鎳、鈀、類似物、或其組合)且通過濺鍍、印刷、電鍍、無電鍍覆、化學氣相沉積(chemical vapor deposition,CVD)、或類似方法形成。導電柱可為無焊料的且具有實質上垂直的側壁。在一些實施例中,導電頂蓋層形成在導電柱的頂部上。導電頂蓋層可包含鎳、錫、錫-鉛、金、銅、銀、鈀、銦、鎳-鈀-金、鎳-金、類似物、或其組合,且可通過鍍覆製程形成。所屬領域中的普通技術人員將理解,以上
實例是出於例示目的而提供。對於給定的應用,可適當地使用其他電路系統。
所述晶粒20可為積體裝置,例如內部包括兩個或更多個晶片的系統晶片(system on a chip,SoC)結構。晶粒20可具有單一功能(例如,邏輯裝置、記憶體晶粒等),或者可具有多個功能(例如,SoC、專用積體電路(application-specific integrated circuit,ASIC)等)。晶粒20可為邏輯晶粒(例如,中央處理器、圖形處理單元、系統晶片、現場可程式設計閘陣列(field-programmable gate array,FPGA)、微控制器、或類似物)、記憶體晶粒(例如,動態隨機存取記憶體(dynamic random access memory,DRAM)晶粒、靜態隨機存取記憶體(static random access memory,SRAM)晶粒、或類似物)、功率管理晶粒(例如,功率管理積體電路(power management integrated circuit,PMIC)晶粒)、射頻(radio frequency,RF)晶粒、感測器晶粒、微機電系統(micro-electro-mechanical-system,MEMS)晶粒、訊號處理晶粒(例如,數位訊號處理(digital signal processing,DSP)晶粒)、前端晶粒(例如,模擬前端(analog front-end,AFE)晶粒)、類似物、或其組合。
然後,將多個晶粒30分別堆疊在晶粒20上且接合到晶粒20。晶粒30具有小於晶粒20的大小。在一些實施例中,晶粒30具有相同的大小(例如,相同的高度和/或表面積),且在其他實施例中,晶粒30具有不同的大小(例如,不同的高度和/或表面
積)。在一些實施例中,晶粒30包括基底32及位於基底32的相對側處的多個電連接件34、36。晶粒30還可包括內連結構(未示出)及電連接到內連結構的接合焊墊(未示出)。晶粒30的基底32、電連接件34、36、內連結構及接合焊墊可與晶粒20的基底、電連接件、內連結構及接合焊墊相同或相似,且因此在本文中不再贅述。在一些實施例中,晶粒30通過電連接件34接合到晶粒20。然而,本公開不限於此。在替代實施例中,晶粒30堆疊在晶粒20上且通過例如晶粒貼合膜(die attach film,DAF)等黏著劑層而黏著到晶粒20。
晶粒30可具有與晶粒20相同或相似的功能,或者具有與晶粒20不同的功能。所述晶粒30可為積體裝置,例如內部包括兩個或更多個晶片的SoC結構。晶粒30可具有單一功能(例如,邏輯裝置、記憶體晶粒等),或者可具有多個功能(例如,SoC、ASIC等)。晶粒30可為邏輯晶粒(例如,中央處理器、圖形處理單元、系統晶片、FPGA、微控制器、或類似物)、記憶體晶粒(例如,DRAM晶粒、SRAM晶粒、或類似物)、功率管理晶粒(例如,PMIC晶粒)、RF晶粒、感測器晶粒、MEMS晶粒、訊號處理晶粒(例如,DSP晶粒)、前端晶粒(例如,AFE晶粒)、類似物、或其組合。在實施例中,晶粒20及晶粒30二者是SoC。在另一實施例中,晶粒20是沒有主動裝置的基底(例如矽基底),且晶粒30是SoC。
參照圖1B,在晶粒20之上在晶粒30之間形成緩衝材料
40。在一些實施例中,通過以下方法形成緩衝材料40:填滿晶粒30之間的間隙且覆蓋晶粒30的表面30a;並且然後進行平坦化,直到暴露出晶粒30的表面30a。在此種實施例中,緩衝材料40的表面40a與晶粒30的表面30a實質上共面。緩衝材料40可比晶粒20的基底和/或晶粒30的基底32軟。舉例來說,緩衝材料40的楊氏模量(Young’s modulus)小於晶粒20的基底的楊氏模量和/或晶粒30的基底32的楊氏模量。舉例來說,緩衝材料40的楊氏模量小於矽的楊氏模量(即,140GPa)。在一些實施例中,緩衝材料40的楊氏模量處於200MPa到100GPa的範圍內。緩衝材料40的熱膨脹係數(CTE)可處於0ppm/℃到100ppm/℃的範圍內,且晶粒20、30的CTE可為約3ppm/℃。緩衝材料40可包括聚合物,例如模制化合物、底部填充膠、或其他環氧系材料、氧化矽、焊料材料、或類似物。
參照圖1C,將圖1B所示結構單體化成單獨的封裝10。單體化製程可包括鋸切、劃切、或類似製程。在一些實施例中,在單體化製程期間,沿著晶粒20之間的切割道區對緩衝材料40及晶圓進行剖切,以形成多個封裝10。在一些實施例中,封裝10包括晶粒20、堆疊在晶粒20上的晶粒30、以及在晶粒20之上位於晶粒30旁邊的緩衝層42。緩衝層42是通過對緩衝材料40進行剖切而形成,且緩衝層42至少設置在晶粒30的一側處。在一些實施例中,緩衝層42可設置在晶粒30的相對側壁30s1、30s2處。舉例來說,如圖3中所示,緩衝層42具有完全環繞晶粒30的所
有側壁的環形圖案。換句話說,緩衝層42可設置在晶粒30的四個側處。在替代實施例中,緩衝層42設置在晶粒30的一個側、兩個側、三個側或四個側處。另外,緩衝層42可設置在所述側的一部分處。在一些實施例中,緩衝層42的相對側壁42s1、42s2與晶粒20的相對側壁20s1、20s2實質上齊平。在一些實施例中,緩衝層42的表面42a與晶粒30的表面30a實質上共面。緩衝層42具有寬度W及高度H。寬度W可處於20μm到5mm的範圍內。高度H可處於10μm到200μm的範圍內。在一些實施例中,位於晶粒30上的緩衝層42的寬度W實質上相同。也就是說,位於晶粒30的不同部分上的緩衝層42的寬度W可實質上相同。然而,本公開不限於此。在實施例(未示出)中,位於晶粒30的不同側壁上的緩衝層42的寬度W不同。舉例來說,位於晶粒30的側壁30s1上的緩衝層42的寬度W與位於晶粒30的側壁30s2上的緩衝層42的寬度W不同。在實施例(未示出)中,位於晶粒30的同一側壁上的緩衝層42的寬度W不同。也就是說,緩衝層42可具有不規則的側壁42s1、42s2。在一些實施例中,位於晶粒30的不同側壁上的緩衝層42的高度H實質上相同。緩衝層42的高度H可與晶粒30的高度實質上相同。在替代實施例中,位於晶粒30的不同部分上的緩衝層42的高度H不同。緩衝層42可與晶粒20及晶粒30直接接觸。在替代實施例中,如果將緩衝層42的一部分填滿到晶粒20與晶粒30之間的間隙(如果存在的話)中,則緩衝層42局部地設置在晶粒20與晶粒30之間。另外,緩衝層42
可在間隙處與例如電連接件(例如,電連接件34)等元件直接接觸和/或環繞例如電連接件(例如,電連接件34)等元件。在一些實施例中,緩衝層42也被稱為應力釋放層、應力緩衝層、側層、或應力阻擋層。
圖2A到圖2E是根據一些實施例的製造半導體封裝的方法的各個階段的示意性剖視圖。圖3是根據一些實施例的半導體封裝的示意性俯視圖。為了例示的簡潔及清晰,在圖3所示俯視圖中僅示出幾個元件。參照圖2A,提供上面具有剝離層104的載體102。在一些實施例中,剝離層104形成在載體102的頂表面上。舉例來說,載體102是玻璃基底且剝離層104是形成在玻璃基底上的光熱轉換(light-to-heat conversion,LTHC)釋放層。然而,本公開不限於此,且其他合適的材料可適用於載體102及剝離層104。在替代實施例中,在剝離層104上塗覆緩衝層(未示出),其中剝離層104夾置在緩衝層與載體102之間,且緩衝層的頂表面進一步提供高程度的共面性。緩衝層可為介電材料層或聚合物層,所述介電材料層或聚合物層由聚醯亞胺、苯併環丁烯(benzocyclobutene,BCB)、聚苯併噁唑(polybenzoxazole,PBO)、或任何其他合適的聚合物系介電材料製成。
然後,在載體102之上形成重佈線結構110。重佈線結構110形成在載體102的頂表面上,且用於電連接積體電路裝置(如果有的話)和/或外部裝置。重佈線結構110可包括一個或多個介電層112及介電層112中的相應的導電圖案114。導電圖案114可
包括通孔和/或導線,以內連任何裝置和/或外部裝置。導電圖案114有時被稱為重佈線走線。介電層112可包含氧化矽、氮化矽、碳化矽、氮氧化矽、低介電常數(low dielectric constant,low-K)介電材料,例如磷矽酸鹽玻璃(phosphosilicate glass,PSG)、硼磷矽酸鹽玻璃(boro-phosphosilicate glass,BPSG)、氟化物矽酸鹽玻璃(fluoride silicate glass,FSG)、SiOxCy、旋塗玻璃、旋塗聚合物、矽碳材料、其化合物、其複合物、其組合、或類似物。可通過例如以下所屬領域中已知的任何合適的方法來沉積介電層112:旋塗、CVD、電漿增強型CVD(plasma enhanced CVD,PECVD)、高密度電漿-CVD(high density plasma-CVD,HDP-CVD)、或類似方法。在一些實施例中,如果介電層112包含有機材料,則重佈線結構110也被稱為中介層(例如有機中介層)。可使用微影技術在介電層112上沉積光阻材料且將光阻材料圖案化以暴露出介電層112的將變成用以填充導電圖案114的開口且接著在介電層112的所述開口中形成導電圖案114。可使用蝕刻製程(例如各向異性乾式蝕刻製程)在介電層112中產生凹槽和/或開口。可於凹槽和/或開口擴散中形成阻擋層且利用導電材料填充凹槽和/或開口。擴散阻擋層可包括通過原子層沉積(atomic layer deposition,ALD)、或類似方法沉積的TaN、Ta、TiN、Ti、CoW、或類似物的一個或多個層,且導電材料可包含通過CVD、物理氣相沉積(physical vapor deposition,PVD)、鍍覆製程、或類似方法沉積的銅、鋁、鎢、銀、及其組合、或類似物。可例如使用化
學機械平坦化(chemical-mechanical planarization,CMP)來移除介電層112上的任何過量的擴散阻擋層和/或導電材料。
在一些實施例中,最頂部導電圖案114是導電焊墊,例如凸塊下金屬(under bump metallurgy,UBM)。導電焊墊可形成在重佈線結構110的最頂部介電層112的開口中,且導電焊墊可延伸穿過重佈線結構110的介電層112的開口且延伸跨越重佈線結構110的頂表面。在一些實施例中,至少在重佈線結構110的最頂部介電層112中的開口中形成晶種層(未示出)。在一些實施例中,晶種層是金屬層,晶種層可為單個層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及位於鈦層之上的銅層。可使用例如PVD或類似方法形成晶種層。然後可在晶種層上形成光阻且將光阻圖案化。可通過旋轉塗布或類似方法形成光阻,且可將光阻曝光用於圖案化。光阻的圖案對應於導電焊墊。在圖案化製程期間,在光阻中形成開口以暴露出晶種層。在光阻的開口中及晶種層的被暴露出的部分上形成導電材料。可通過鍍覆(例如電鍍或無電鍍覆、或者類似方法)形成導電材料。導電材料可包括金屬,如銅、鈦、鎢、鋁、或類似物。然後,移除光阻以及其上未形成導電材料的部分晶種層。可通過例如使用氧電漿、或類似物進行的可接受的灰化或剝除製程來移除光阻。一旦光阻被移除,便例如使用可接受的蝕刻製程(例如通過濕式蝕刻或乾式蝕刻)來移除晶種層的被暴露出的部分。晶種層的剩餘部分及導電材料形成導電焊墊。
然後,在最頂部導電圖案114上在重佈線結構110的頂表面處形成電連接件120。在一些實施例中,電連接件120包括導電柱,導電柱之上具有導電頂蓋層(導電頂蓋層可為焊料頂蓋)。包括導電柱及導電頂蓋層的電連接件120有時被稱為微凸塊。在一些實施例中,導電柱包含導電材料(例如銅、鋁、金、鎳、鈀、類似物、或其組合)且通過濺鍍、印刷、電鍍、無電鍍覆、CVD、或類似方法形成。導電柱可為無焊料的且具有實質上垂直的側壁。在一些實施例中,導電頂蓋層形成在導電柱的頂部上。導電頂蓋層可包含鎳、錫、錫-鉛、金、銅、銀、鈀、銦、鎳-鈀-金、鎳-金、類似物、或其組合,且可通過鍍覆製程形成。
在替代實施例中,電連接件120不包括金屬柱,而是焊料球和/或凸塊,例如無電鍍鎳浸金(ENIG)、無電鍍鎳鈀浸金(ENEPIG)技術形成的凸塊、或類似物。在此種實施例中,凸塊電連接件120包含導電材料,例如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似物、或其組合。在實施例中,通過以合適的方法(例如蒸鍍、電鍍、印刷、焊料轉移、植球、或類似方法)最初形成焊料的層來形成電連接件120。一旦已在結構上形成焊料的層,便可實行回流,以將材料成形為期望的凸塊形狀。
參照圖2B,將圖1C所示多個封裝10接合到重佈線結構110。在一些實施例中,使用拾取及放置工具將封裝10放置在重佈線結構110上。可通過電連接件36將封裝10接合到重佈線結構110。舉例來說,電連接件36與電連接件120在重佈線結構110
與封裝10之間形成接頭,且因此將重佈線結構110電連接到封裝10。將封裝10鄰近彼此設置,且在封裝10之間形成間隙G。在一些實施例中,封裝10在其側壁處分別具有緩衝層42。在一些實施例中,封裝10的緩衝層42的部分面對彼此。舉例來說,緩衝層42的位於一個封裝10中的晶粒30的側壁30s1上的部分面對緩衝層42的位於鄰近的封裝10中的晶粒30的側壁30s1上的部分。在一些實施例中,緩衝層42被設置成與封裝10之間的間隙G鄰近。換句話說,間隙G可設置在鄰近的封裝10的緩衝層42之間。在一些實施例中,間隙G也被稱為晶粒到晶粒間隙。
然後,可在封裝10與重佈線結構110之間形成底部填充膠130。在一些實施例中,底部填充膠130環繞封裝10與重佈線結構110之間的電連接件120。可在將封裝10貼合到重佈線結構110之後通過毛細流動製程(capillary flow process)形成底部填充膠130。在一些實施例中,底部填充膠130的材料與緩衝層42的材料不同。在一些實施例中,在底部填充膠130與緩衝層42之間形成介面。在一些實施例中,封裝10之間的底部填充膠130的頂表面與封裝10的頂表面實質上齊平。也就是說,例如,底部填充膠130填滿封裝10之間的間隙G。底部填充膠130可設置在緩衝層42之間且與緩衝層42直接接觸。在一些實施例中,底部填充膠130設置在緩衝層42的側壁42s1、42s2及表面42a處。底部填充膠130可環繞緩衝層42及晶粒20。然而,本公開不限於此。在替代實施例(未示出)中,封裝10之間的底部填充膠130的頂表
面低於封裝10的頂表面。在實施例(未示出)中,封裝10之間的底部填充膠130的頂表面低於緩衝層42的頂表面(即,與表面42a相對的表面)。在此種實施例中,僅一部分(例如,下部部分)的緩衝層42的側壁42s1與底部填充膠130直接接觸。相似地,緩衝層42的側壁42s2可局部地與底部填充膠130直接接觸。
在形成底部填充膠130之後,在重佈線結構110、封裝10及底部填充膠130之上形成包封體140。包封體140可為模制化合物、環氧樹脂、或類似物,且可通過壓縮模制、移轉模制、或類似方法施加。可在重佈線結構110之上形成包封體140,使得封裝10被包埋或覆蓋。然後將包封體140固化。在一些實施例中,包封體140的材料與緩衝層42的材料不同。在替代實施例中,包封體140填滿封裝10之間的間隙G。在此種實施例中,包封體140與緩衝層42直接接觸,且在緩衝層42與包封體140之間形成介面。
參照圖2C,在導電圖案114之上依序形成多個導電焊墊150及多個導電端子152。在一些實施例中,從重佈線結構110剝離及分離載體102。在一些實施例中,剝離製程包括將例如鐳射或紫外(ultraviolet,UV)光等光投射到剝離層104(例如,LTHC釋放層)上,使得可容易地將載體102與剝離層104一起移除。在剝離步驟期間,在對載體102及剝離層104進行剝離之前,可使用膠帶(未示出)來固定結構。在移除載體102及剝離層104之後,在導電圖案114上分別形成導電焊墊150。導電焊墊150與
封裝10設置在重佈線結構110的相對側處。在一些實施例中,導電焊墊150及電連接件120設置在重佈線結構110的相對側處。可形成導電焊墊150以用於球安裝。在一些實施例中,導電焊墊150包含鋁、銅、鎳、或其合金。在一些實施例中,導電焊墊150可包含UBM。
然後,可在導電焊墊150上放置導電端子152。導電端子152可為受控塌陷晶粒連接(controlled collapse chip connection,C4)凸塊、例如球格陣列(ball grid array,BGA)等焊料球、金屬柱、無電鍍鎳鈀浸金(ENEPIG)技術形成的凸塊、或類似物。導電端子152包含導電材料,例如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似物、或其組合。在其中導電端子152是焊料凸塊的實施例中,通過以各種方法(例如蒸鍍、電鍍、印刷、焊料轉移、植球、或類似方法)最初形成焊料的層來形成導電端子152。在此種實施例中,一旦已形成焊料的層,便實行回流以將材料成形為期望的凸塊形狀。可在包封體140位於膠帶上時實行載體102及剝離層104的移除和/或導電焊墊150及導電端子152的形成。
參照圖2D,將包封體140減薄,以暴露出封裝10的頂表面。可通過CMP、研磨製程、或類似方法完成減薄。在減薄之後,可將包封體140的頂表面及封裝10的頂表面整平。在一些實施例中,包封體140的頂表面與封裝10的頂表面及底部填充膠130的頂表面實質上齊平。在一些實施例中,通過單體化製程將重佈線結構110及包封體140單體化(未示出),從而形成半導體封裝
100。可在重佈線結構110位於膠帶上時實行單體化。沿著切割道區實行單體化。在一些實施例中,單體化製程包括鋸切製程、鐳射製程、或其組合。如圖2D中所示,作為單體化製程的結果,重佈線結構110的側壁與包封體140的側壁實質上彼此齊平。半導體封裝100可集成同質或異質組件。在一些實施例中,通過首先形成重佈線結構(此也被稱為重佈線層(redistribution layer,RDL)先形成製程)來形成半導體封裝100。然而,本公開不限於此。
參照圖2E,可將半導體封裝100安裝到基底202上,以形成半導體封裝200。半導體封裝200可為扇出型封裝、超大型封裝和/或適用於高性能計算(high-performance computing,HPC)應用。然而,本公開不限於此。基底202可為封裝基底,例如其中包括多層核心的積層基底、包括多個層壓介電膜的層壓基底、高層數(high-layer-count,HLC)基底、印刷電路板(printed circuit board,PCB)、或類似基底。在實施例中,基底202包括至少12個層。在一些實施例中,基底202的有效CTE大於14ppm/℃,此大於矽的CTE(即,3ppm/℃)。在一些實施例中,基底202在熱處理期間膨脹。
基底202可包括一個或多個電介質或聚合物層204以及位於電介質或聚合物層204中的相應的導電圖案206。導電圖案206可例如使用通孔和/或導線來對電訊號進行繞線。導電圖案206可包括位於基底202的最外表面處的接合焊墊。基底202還可包括電連接件(未示出)(例如焊料球),以使得基底202能夠安裝
到另一裝置。在一些實施例中,對導電端子152進行回流以將半導體封裝100貼合到導電圖案206(即,接合焊墊),從而將半導體封裝100接合到基底202。導電端子152將基底202電耦合和/或實體耦合到半導體封裝100。在替代實施例中,在將半導體封裝100安裝在基底202上之前,將被動裝置(例如,表面安裝裝置(surface mount device,SMD),未示出)貼合到基底202(例如,通過接合到接合焊墊)。被動裝置可與導電端子152接合到基底202的相同表面。在一些實施例中,在將半導體封裝100接合到基底202上之後,在半導體封裝100與基底202之間形成底部填充膠210,底部填充膠210環繞導電端子152。可通過毛細流動製程形成底部填充膠210。
在一些實施例中,在封裝10之間(即,晶粒30之間)形成間隙G,且鄰近間隙G形成緩衝層42。舉例來說,如圖2E及圖3中所示,緩衝層42至少設置在晶粒30的鄰近間隙G的側壁30s1上。在一些實施例中,兩個封裝10在緊鄰間隙G的側壁30s1上具有緩衝層42。在一些實施例中,基底202與晶粒20、30之間存在CTE失配。CTE失配可能在封裝10之間的間隙(即,晶粒30之間的間隙)處引起應力集中,且因此底部填充膠130可能易於分離且重佈線結構110可能破裂。對於在高電性性能的基底(多層核心或多於12層數基底)上使用大型中介層(基底上晶圓上晶粒(chip-on-wafer-on-substrate,CoWoS)或有機中介層)的異質集成,基底與以上裝置之間的CTE失配更可能引起裝置間
隙處的底部填充膠分離及RDL破裂。在一些實施例中,通過鄰近於封裝10之間的間隙G而設置緩衝層42,可釋放應力。因此,可防止底部填充膠130的分離、重佈線結構110的破裂和/或類似現象。
在一些實施例中,如圖3中所示,緩衝層42完全環繞晶粒30。然而,本公開不限於此。在替代實施例中,如圖4A及圖4B中所示,緩衝層42設置在晶粒30的與封裝10之間的間隙G鄰近的一個側壁30s1處。在此種實施例中,緩衝層42的側壁42s1與晶粒20的側壁20s1實質上齊平。晶粒20的側壁20s2可與晶粒30的側壁30s2實質上齊平。在替代實施例(未示出)中,晶粒20的側壁20s2相對於晶粒30的側壁30s2偏移(shift)。在實施例中,晶粒20是沒有主動裝置的基底(例如矽基底),且晶粒30是SoC。在另一實施例中,晶粒20及晶粒30二者是SoC。在替代實施例中,如圖5A及圖5B所示封裝10中所示,至少兩個晶粒30堆疊在晶粒20上,且緩衝層42形成在晶粒30的側壁30s1上。換句話說,至少一個晶粒30設置在晶粒30(例如,最底部晶粒)與晶粒20(例如,最頂部晶粒)之間。晶粒30的大小小於晶粒20的大小。在一些實施例中,緩衝層42連續地形成在晶粒30的與封裝10之間的間隙G鄰近的側壁30s1上。緩衝層42的側壁42s1可與晶粒20的側壁20s1實質上齊平。在一些實施例中,晶粒30具有不同的大小,且因此位於不同晶粒30上的緩衝層42的寬度W1、W2、W3不同。在替代實施例(未示出)中,晶粒30
具有實質上相同的大小,且位於不同晶粒30上的緩衝層42具有相同的寬度。在替代實施例(未示出)中,緩衝層42形成在晶粒30的兩個側壁、三個側壁或四個側壁上,且晶粒30的所述兩個側壁、所述三個側壁或所述四個側壁中的一者是與封裝10之間的間隙G鄰近的側壁30s1。
在一些實施例中,緩衝層42的側壁42s1與晶粒20的側壁20s1實質上齊平。然而,本公開不限於此。緩衝層42的側壁42s1可為不規則的。在替代實施例中,如圖6A及圖6B中所示,緩衝層42設置在晶粒20的側壁20s1的至少一部分上。在實施例(未示出)中,緩衝層42完全覆蓋晶粒20的側壁20s1。緩衝層42可設置在晶粒20的兩個側壁、三個側壁或四個側壁處,且晶粒20的所述兩個側壁、所述三個側壁或所述四個側壁中的一者是與封裝10之間的間隙G鄰近的側壁20s1。另外,緩衝層42可設置在側的一部分處。在替代實施例中,如圖7A及圖7B中所示,緩衝層42的側壁42s1相對於晶粒20的側壁20s1向內偏移一距離。換句話說,緩衝層42的側壁42s1可不與晶粒20的側壁20s1齊平。在替代實施例中,鄰近的封裝10的緩衝層42實體連接且彼此直接接觸。可在形成具有晶粒20及晶粒30的單獨堆疊之後形成緩衝層42。舉例來說,在晶粒20上堆疊晶粒30之後,實行單體化製程以形成沒有緩衝層的多個單獨堆疊。然後,在堆疊的晶粒30上形成緩衝層42,以形成封裝10。在一些實施例中,緩衝層42是例如環氧系壩材料(dam material)等膏、例如導熱黏著劑等黏
著劑或類似物。
在一些實施例中,封裝10的緩衝層42具有相同的配置,然而,本公開不限於此。在替代實施例中,封裝10的緩衝層42具有不同的配置。舉例來說,如圖8A及圖8B所示封裝10中所示,封裝10中的一者的緩衝層42設置在晶粒30的鄰近間隙G的一側處,而封裝10中的另一者的緩衝層42設置在晶粒30的不止一側處。在一些實施例中,緩衝層42分別相似於圖2E及圖4A所示緩衝層42。然而,本公開不限於此。緩衝層42可分別選自圖2E、圖4A、圖5A、圖6A及圖7A以及類似圖所示緩衝層42,且彼此不同。另外,如圖9A及圖9B所示封裝10中所示,具有緩衝層42的封裝10可與沒有緩衝層42的封裝12集成在一起。封裝12可包括半導體基底、晶粒、例如高頻寬記憶體(high bandwidth memory,HBM)模組等晶粒堆疊或任何其他合適的封裝。在一些實施例中,封裝10的緩衝層42相似於圖4A所示封裝10的緩衝層42。然而,本公開不限於此。圖9A所示緩衝層42可選自圖2E、圖5A、圖6A及圖7A以及類似圖所示緩衝層42。
在一些實施例中,通過鄰近於封裝之間的間隙而形成緩衝層,釋放由封裝基底與晶粒之間的CTE失配引起的應力。因此,可防止底部填充膠的分離、RDL的破裂、和/或類似現象。因此,可提高形成的半導體封裝的可靠性和/或結構完整性。
還可包括其他特徵及製程。舉例來說,可包括測試結構,以說明對三維(three-dimensional,3D)封裝或三維積體電路
(three-dimensional integrated circuit,3DIC)裝置進行驗證測試。測試結構可包括例如在重佈線層中或基底上形成的測試焊墊,所述測試焊墊使得能夠對3D封裝或3DIC裝置進行測試、對探針(probe)和/或探針卡(probe card)進行使用等。可對中間結構及最終結構實行驗證測試。另外,本文中所公開的結構及方法可接合包括對已知良好晶粒(known good die)的中間驗證的測試方法一起使用,以提高良率(yield)並降低成本。
根據本公開的一些實施例,一種半導體封裝包括重佈線結構、第一晶粒、第二晶粒以及緩衝層。所述第二晶粒位於所述第一晶粒與所述重佈線結構之間,所述第二晶粒電連接到所述第一晶粒且接合到所述重佈線結構。所述緩衝層設置在所述第二晶粒的第一側壁上,其中所述緩衝層的第二側壁與所述第一晶粒的第三側壁實質上齊平。
根據本公開的一些實施例,所述第二晶粒的與所述第一側壁相對的第四側壁和所述第一晶粒的與所述第三側壁相對的第五側壁實質上齊平。
根據本公開的一些實施例,所述緩衝層還設置在所述第二晶粒的與所述第一側壁相對的第四側壁上,且所述緩衝層的與所述第二側壁相對的第五側壁和所述第一晶粒的與所述第三側壁相對的第六側壁實質上齊平。
根據本公開的一些實施例,所述第二晶粒包括基底,且所述緩衝層的楊氏模量小於所述基底的楊氏模量。
根據本公開的一些實施例,所述半導體封裝還包括位於所述第一晶粒與所述第二晶粒之間的第三晶粒,其中所述緩衝層還設置在所述第三晶粒的側壁上。
根據本公開的一些實施例,所述緩衝層的位於所述第二晶粒上的一部分的寬度與所述緩衝層的位於所述第三晶粒上的一部分的寬度不同。
根據本公開的一些實施例,所述緩衝層的表面與所述第二晶粒的表面實質上齊平。
根據本公開的一些實施例,一種半導體封裝包括重佈線結構、第一晶粒、第二晶粒、緩衝層以及底部填充膠。所述第一晶粒與所述第二晶粒彼此上下堆疊,所述第二晶粒接合到所述重佈線結構。所述緩衝層設置在所述第二晶粒的第一側壁上且延伸到所述第一晶粒的第二側壁的第一部分上。所述底部填充膠與所述緩衝層及所述第一晶粒的所述第二側壁的第二部分接觸。
根據本公開的一些實施例,所述緩衝層具有環繞所述第二晶粒的環形圖案。
根據本公開的一些實施例,所述緩衝層還設置在所述第二晶粒的與所述第一側壁相對的第三側壁上。
根據本公開的一些實施例,所述第二晶粒的與所述第一側壁相對的第三側壁和所述第一晶粒的與所述第二側壁相對的第四側壁實質上齊平。
根據本公開的一些實施例,所述緩衝層的楊氏模量處於
200Mpa到100Gpa的範圍內,且所述緩衝層的熱膨脹係數處於0ppm/℃到20ppm/℃的範圍內。
根據本公開的一些實施例,所述半導體封裝還包括第三晶粒,所述第三晶粒接合到所述重佈線結構且局部地被所述底部填充膠包封,其中所緩衝層設置在所述第二晶粒與所述第三晶粒之間。
根據本公開的一些實施例,一種半導體封裝包括重佈線結構、第一封裝、第二封裝、第一緩衝層以及第二緩衝層。所述重佈線結構接合到基底。所述第一封裝包括第一晶粒及第二晶粒,在所述第一封裝與所述基底之間接合到所述重佈線結構。所述第二封裝接合到所述重佈線結構。所述第一緩衝層設置在所述第二晶粒的側壁上。所述第二緩衝層設置在所述第二封裝的側壁上,其中所述第一緩衝層及所述第二緩衝層設置在所述第一封裝與所述第二封裝之間。
根據本公開的一些實施例,所述半導體封裝還包括底部填充膠,所述底部填充膠位於所述第一封裝與所述重佈線結構之間以及所述第一緩衝層與所述第二封裝之間,其中所述底部填充膠與所述第一晶粒的側壁直接接觸。
根據本公開的一些實施例,所述的半導體封裝還包括包封所述第一封裝及所述第二封裝的包封體,其中所述包封體的側壁與所述重佈線結構的側壁實質上齊平。
根據本公開的一些實施例,所述第一緩衝層環繞所述第
一封裝。
根據本公開的一些實施例,所述第一緩衝層與所述第二晶粒直接接觸。
根據本公開的一些實施例,所述第二封裝包括第三晶粒,且所述第二緩衝層與所述第三晶粒的側壁直接接觸。
根據本公開的一些實施例,所述第一緩衝層的側壁與所述第一晶粒的側壁實質上齊平。
以上概述了若干實施例的特徵,以使所屬領域中的技術人員可更好地理解本公開的各個方面。所屬領域中的技術人員應理解,他們可容易地使用本公開作為設計或修改其他製程及結構的基礎來施行與本文中所介紹的實施例相同的目的和/或實現與本文中所介紹的實施例相同的優點。所屬領域中的技術人員還應認識到,這些等效構造並不背離本公開的精神及範圍,而且他們可在不背離本公開的精神及範圍的條件下在本文中作出各種改變、代替及變更。
10:封裝
20、30:晶粒
20s1、20s2、30s1、30s2、42s1、42s2:側壁
30a、42a:表面
32、202:基底
34、36:電連接件
42:緩衝層
100、200:半導體封裝
110:重佈線結構
112:介電層
114:導電圖案
120:電連接件
130、210:底部填充膠
140:包封體
150:導電焊墊
152:導電端子
204:電介質或聚合物層
206:導電圖案
G:間隙
Claims (8)
- 一種半導體封裝,包括:重佈線結構,接合到第一基底;第一晶粒及第二晶粒,所述第二晶粒位於所述第一晶粒與所述重佈線結構之間,所述第二晶粒電連接到所述第一晶粒且接合到所述重佈線結構;緩衝層,設置在所述第二晶粒的第一側壁上,其中所述緩衝層的表面與所述第二晶粒的表面實質上齊平;以及底部填充膠,位於所述第二晶粒與所述重佈線結構之間。
- 如請求項1所述的半導體封裝,其中所述第二晶粒的與所述第一側壁相對的第二側壁和所述第一晶粒的側壁實質上齊平。
- 如請求項1所述的半導體封裝,其中所述緩衝層還設置在所述第二晶粒的與所述第一側壁相對的第二側壁上,且所述緩衝層的側壁和所述第一晶粒的側壁實質上齊平。
- 如請求項1所述的半導體封裝,其中所述第二晶粒包括第二基底,且所述緩衝層的楊氏模量小於所述第二基底的楊氏模量。
- 如請求項1所述的半導體封裝,還包括位於所述第一晶粒與所述第二晶粒之間的第三晶粒,其中所述緩衝層還設置在所述第三晶粒的側壁上。
- 一種半導體封裝,包括: 重佈線結構,接合到基底;第一晶粒與第二晶粒,彼此上下堆疊,所述第二晶粒接合到所述重佈線結構;緩衝層,設置在所述第二晶粒的第一側壁上且延伸到所述第一晶粒的第二側壁的第一部分上,其中所述緩衝層具有環繞所述第二晶粒的環形圖案;以及底部填充膠,與所述緩衝層及所述第一晶粒的所述第二側壁的第二部分接觸。
- 一種半導體封裝,包括:重佈線結構,接合到基底;第一晶粒及第二晶粒,所述第二晶粒位於所述第一晶粒與所述重佈線結構之間且所述第二晶粒接合到所述重佈線結構;緩衝層,設置在所述第二晶粒的第一側壁上,其中所述緩衝層的第二側壁與所述第一晶粒的第三側壁實質上齊平,且所述第二晶粒的與所述第一側壁相對的第四側壁和所述第一晶粒的與所述第三側壁相對的第五側壁實質上齊平;以及底部填充膠,位於所述第二晶粒與所述重佈線結構之間。
- 如請求項7所述的半導體封裝,其中所述底部填充膠與所述第一晶粒的所述第三側壁直接接觸。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/153,739 | 2021-01-20 | ||
US17/153,739 US11742322B2 (en) | 2021-01-20 | 2021-01-20 | Integrated fan-out package having stress release structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI758129B true TWI758129B (zh) | 2022-03-11 |
TW202230646A TW202230646A (zh) | 2022-08-01 |
Family
ID=80867819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110108963A TWI758129B (zh) | 2021-01-20 | 2021-03-12 | 半導體封裝 |
Country Status (3)
Country | Link |
---|---|
US (2) | US11742322B2 (zh) |
CN (1) | CN114284250A (zh) |
TW (1) | TWI758129B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20200006178A1 (en) * | 2017-06-30 | 2020-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of Manufacture of a Semiconductor Device |
US20200152602A1 (en) * | 2015-07-02 | 2020-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chip Package Having Die Structures of Different Heights and Method of Forming Same |
US20200365571A1 (en) * | 2019-05-16 | 2020-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method of manufacturing the same |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5579402B2 (ja) * | 2009-04-13 | 2014-08-27 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法並びに電子装置 |
JP2011061004A (ja) * | 2009-09-10 | 2011-03-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8313982B2 (en) * | 2010-09-20 | 2012-11-20 | Texas Instruments Incorporated | Stacked die assemblies including TSV die |
US8797057B2 (en) | 2011-02-11 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Testing of semiconductor chips with microbumps |
US8716859B2 (en) * | 2012-01-10 | 2014-05-06 | Intel Mobile Communications GmbH | Enhanced flip chip package |
US9443783B2 (en) | 2012-06-27 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC stacking device and method of manufacture |
US9299649B2 (en) | 2013-02-08 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D packages and methods for forming the same |
US8993380B2 (en) | 2013-03-08 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for 3D IC package |
US9281254B2 (en) | 2014-02-13 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming integrated circuit package |
US9425126B2 (en) | 2014-05-29 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy structure for chip-on-wafer-on-substrate |
US9496189B2 (en) | 2014-06-13 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked semiconductor devices and methods of forming same |
KR102210332B1 (ko) * | 2014-09-05 | 2021-02-01 | 삼성전자주식회사 | 반도체 패키지 |
US9461018B1 (en) | 2015-04-17 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out PoP structure with inconsecutive polymer layer |
US9666502B2 (en) | 2015-04-17 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Discrete polymer in fan-out packages |
US9768149B2 (en) * | 2015-05-19 | 2017-09-19 | Micron Technology, Inc. | Semiconductor device assembly with heat transfer structure formed from semiconductor material |
US9735131B2 (en) | 2015-11-10 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-stack package-on-package structures |
TW201911508A (zh) * | 2017-08-02 | 2019-03-16 | 矽品精密工業股份有限公司 | 電子封裝件 |
US10510603B2 (en) * | 2017-08-31 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive vias in semiconductor packages and methods of forming same |
US11011502B2 (en) * | 2018-01-19 | 2021-05-18 | Nepes Co., Ltd. | Semiconductor package |
KR102503233B1 (ko) * | 2018-01-24 | 2023-02-24 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US10510650B2 (en) * | 2018-02-02 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device packaging structure having through interposer vias and through substrate vias |
KR20190094542A (ko) * | 2018-02-05 | 2019-08-14 | 삼성전자주식회사 | 반도체 패키지 |
US10714454B2 (en) * | 2018-08-14 | 2020-07-14 | Semiconductor Components Industries, Llc | Stack packaging structure for an image sensor |
US10707257B2 (en) * | 2018-08-14 | 2020-07-07 | Semiconductor Components Industries, Llc | Multi-chip packaging structure for an image sensor |
US10840197B2 (en) * | 2018-10-30 | 2020-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and manufacturing method thereof |
-
2021
- 2021-01-20 US US17/153,739 patent/US11742322B2/en active Active
- 2021-03-12 TW TW110108963A patent/TWI758129B/zh active
- 2021-03-17 CN CN202110285570.XA patent/CN114284250A/zh active Pending
-
2023
- 2023-07-07 US US18/348,351 patent/US20230352447A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20200152602A1 (en) * | 2015-07-02 | 2020-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chip Package Having Die Structures of Different Heights and Method of Forming Same |
US20200006178A1 (en) * | 2017-06-30 | 2020-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of Manufacture of a Semiconductor Device |
US20200365571A1 (en) * | 2019-05-16 | 2020-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20220230990A1 (en) | 2022-07-21 |
US20230352447A1 (en) | 2023-11-02 |
TW202230646A (zh) | 2022-08-01 |
CN114284250A (zh) | 2022-04-05 |
US11742322B2 (en) | 2023-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11443995B2 (en) | Integrated circuit package and method | |
CN110034026B (zh) | 封装件结构和方法 | |
US11854921B2 (en) | Integrated circuit package and method | |
CN111799227B (zh) | 半导体器件及其形成方法 | |
US11309289B2 (en) | Integrated circuit package having heat dissipation structure | |
US11024605B2 (en) | Integrated circuit package and method | |
US11164824B2 (en) | Package structure and method of fabricating the same | |
US11037877B2 (en) | Package structure and method of manufacturing the same | |
US11705343B2 (en) | Integrated circuit package and method of forming thereof | |
US11848246B2 (en) | Integrated circuit package and method | |
US11728327B2 (en) | Integrated circuit package and method | |
CN112018060A (zh) | 集成电路器件及其形成方法 | |
US20230378012A1 (en) | Integrated Circuit Packages and Methods of Forming the Same | |
US20230402403A1 (en) | Semiconductor package and manufacturing method of semiconductor package | |
US20230260941A1 (en) | Semiconductor Device and Method | |
TWI790702B (zh) | 半導體封裝及製造半導體封裝的方法 | |
TWI758129B (zh) | 半導體封裝 | |
CN221747211U (zh) | 集成电路封装 | |
US11830859B2 (en) | Package structures and method for forming the same | |
US20240021491A1 (en) | Semiconductor device and method of forming the same | |
US20240266316A1 (en) | Integrated circuit packages and methods of forming the same |