TWI778236B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI778236B TWI778236B TW108106291A TW108106291A TWI778236B TW I778236 B TWI778236 B TW I778236B TW 108106291 A TW108106291 A TW 108106291A TW 108106291 A TW108106291 A TW 108106291A TW I778236 B TWI778236 B TW I778236B
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Abstract
實施形態提供一種可供電子零件散熱之半導體裝置。 一實施形態之半導體裝置具備基板、半導體零件、及導熱體。上述半導體零件包含內插式基板、搭載於上述內插式基板之第1面之電子零件、與上述第1面及上述電子零件接觸而覆蓋該第1面及該電子零件之被覆樹脂、以及與上述被覆樹脂接觸而覆蓋該被覆樹脂之金屬膜,且上述半導體零件搭載於上述基板。上述導熱體附著於上述金屬膜,將上述基板與上述金屬膜連接,且導熱率高於上述被覆樹脂。
Description
本發明之實施形態係關於一種半導體裝置。
已知利用密封樹脂密封搭載於內插式基板之電子零件的半導體零件。該半導體零件係藉由端子搭載於基板。半導體零件經由端子導熱至基板,藉此散熱。然而,半導體零件存在無法由端子充分地散熱之情形。
實施形態提供一種電子零件能夠散熱之半導體裝置。
一實施形態之半導體裝置具備基板、半導體零件、及導熱體。上述半導體零件包含內插式基板、搭載於上述內插式基板之第1面之電子零件、與上述第1面及上述電子零件接觸而覆蓋該第1面及該電子零件之被覆樹脂、以及與上述被覆樹脂接觸而覆蓋該被覆樹脂之金屬膜,且上述半導體零件搭載於上述基板。上述導熱體附著於上述金屬膜,將上述基板與上述金屬膜連接,且導熱率高於上述被覆樹脂。
(第1實施形態) 以下,參照圖1至圖3,對第1實施形態進行說明。再者,於本說明書中,實施形態之構成要素及該要素之說明存在以複數種表達進行記載之情形。構成要素及其說明並不由本說明書之表達限定。構成要素可以藉由與本說明書中之名稱不同的名稱進行指定。而且,構成要素可以藉由與本說明書中之表達不同的表達進行說明。
圖1係概略性地表示第1實施形態之半導體裝置1之一部分的剖視圖。半導體裝置1亦可以稱為電子設備或半導體記憶裝置。作為本實施形態中之一例之半導體裝置1係智慧型手機。半導體裝置1例如亦可為個人電腦、便攜式電腦、平板、行動電話、電視接收機、硬碟驅動器(Hard Disk Drive:HDD)、固態驅動器(Solid State Drive:SSD)、USB(Universal Serial Bus,通用串列匯流排)閃速驅動器、SD(Secure Digital,安全數位)卡、eMMC(註冊商標)、通用閃存存儲器(Universal Flash Storage:UFS)、記憶卡、其他記憶裝置、可穿戴設備、智慧型揚聲器、家用電氣設備、或包含半導體之其他裝置。如圖1所示,半導體裝置1包含基板5、半導體零件6、及導熱體7。
基板5例如為印刷電路板(PCB)。基板5具有表面5a。表面5a係朝向Z軸之正方向(Z軸之箭頭所表示之方向)之大致平坦的面。於基板5之表面5a搭載半導體零件6。進而,於基板5,亦可以搭載如控制半導體裝置1之中央處理單元(CPU)之其他裝置。
基板5還包含複數個基材11、複數個導體層12、複數個通孔13、及兩個阻焊劑14。亦即,基板5係包含複數層之多層板,但亦可為單面板。
基材11係設置於基板5之內部之絕緣層。導體層12設置於基材11之表面,例如形成基板5中之配線、焊盤、焊墊、及實心圖案(平面)。通孔13設置於基材11,連接複數個導體層12。阻焊劑14覆蓋基材11及導體層12。一阻焊劑14形成基板5之表面5a的至少一部分,位於基材11與半導體零件6之間。
導體層12包含電源16、接地17、複數個電極18、及複數個接地焊墊19。接地焊墊19係導體之一例,亦可以稱為焊盤或圖案。
電源16例如具有實心圖案之電源層、及連接於該電源層之配線。接地17係接地電位之導體。接地17例如具有實心圖案之接地層、及連接於該接地層之配線。
電極18設置於被形成表面5a之阻焊劑14覆蓋之導體層12。電極18包含信號電極18A、電源電極18B、及接地電極18C。信號電極18A用於設置於基板5之電路與半導體零件6之間的信號之收發。因此,電信號通過信號電極18A。電源電極18B連接於電源16。接地電極18C連接於接地17。
電極18例如配置為矩陣狀(網格狀)。接地電極18C配置於較信號電極18A及電源電極18B更靠外側。再者,連接於接地17之電極亦可以位於較信號電極18A及電源電極18B更靠內側。
接地焊墊19設置於被形成表面5a之阻焊劑14覆蓋之導體層12。接地焊墊19連接於接地17。
圖2係將第1實施形態之半導體裝置1分解而概略性地表示之例示性立體圖。如圖2所示,接地焊墊19沿著電極18延伸,包圍電極18。複數個接地焊墊19相互分離。因此,導體層12亦可以具有通過兩個接地焊墊19之間之配線。
如圖1所示,於阻焊劑14設置複數個孔14a。孔14a使電極18及接地焊墊19露出。藉此,電極18及接地焊墊19設置於基板5之表面5a。
作為本實施形態中之一例的半導體零件6係球柵陣列(Ball Grid Array:BGA)之半導體封裝。再者,半導體零件6亦可以具有其他構造,亦可為如焊盤網格陣列(Land Grid Array:LGA)之其他規格之半導體封裝。
如附圖所示,於本說明書中,定義了X軸、Y軸及Z軸。X軸、Y軸與Z軸相互正交。X軸係與半導體零件6之寬度一致。Y軸係與半導體零件6之長度(深度)一致。Z軸係與半導體零件6之高度(厚度)一致。
半導體零件6包含內插式基板21、控制器晶片22、複數個記憶體晶片23、複數個接合線24、密封樹脂25、及金屬膜26。控制器晶片22及記憶體晶片23分別為電子零件之一例。密封樹脂25為被覆樹脂之一例。
內插式基板21例如為印刷配線板(PWB)。內插式基板21具有第1面21a、第2面21b、及端面21c。第1面21a係朝向Z軸之正方向之大致平坦的面。第2面21b係位於第1面21a之相反側且朝向Z軸之負方向(Z軸之箭頭之相反方向)的大致平坦的面。第2面21b與基板5之表面5a相互相對。端面21c設置於第1面21a之緣部與第2面21b之緣部之間,朝向與Z軸交叉之方向。
內插式基板21還具有複數個端子31。端子31分別包含焊墊35、及焊球36。焊球36亦可以稱為凸塊。焊球36連接於對應之電極18。再者,端子31例如根據半導體零件6之規格,亦可以與焊墊35及焊球36不同。例如,於半導體零件6為LGA之情形時,端子31包含焊墊35,不包含焊球36。
端子31設置於第2面21b。端子31包含信號端子31A、電源端子31B、及接地端子31C。信號端子31A連接於信號電極18A。電源端子31B連接於電源電極18B。接地端子31C連接於接地電極18C。
端子31例如排列為矩陣狀(網格狀)。接地端子31C配置於較信號端子31A及電源端子31B更靠外側。再者,經由電極18連接於接地17之端子31亦可以位於較信號端子31A及電源端子31B更靠內側。
控制器晶片22例如為片上系統(System on a Chip:SoC)。再者,控制器晶片22亦可為其他集成電路(IC)或電路。
控制器晶片22搭載於內插式基板21之第1面21a。例如,控制器晶片22藉由接著層22a接著於第1面21a。進而,控制器晶片22之電極與設置於第1面21a之電極藉由接合線24連接。藉此,控制器晶片22經由設置於內插式基板21之配線而電性連接於端子31。再者,控制器晶片22亦可以例如藉由覆晶安裝搭載於第1面21a。
記憶體晶片23例如為NAND型閃速記憶體,記憶信息。再者,記憶體晶片23亦可為如NOR型閃速記憶體之其他記憶體晶片。
記憶體晶片23搭載並堆積於內插式基板21之第1面21a。例如,記憶體晶片23藉由接著層23a接著於第1面21a。進而,記憶體晶片23之電極與設置於第1面21a之電極藉由接合線24連接。藉此,記憶體晶片23經由設置於內插式基板21之配線而電性連接於控制器晶片22。再者,記憶體晶片23亦可以例如藉由覆晶安裝而搭載於第1面21a。
接著層22a、23a係晶粒接合膜(Die Attach Film:DAF)。晶粒接合膜亦可以稱為晶粒結著膜(Die Bonding Film)。接著層22a、23a例如亦可為接著劑。
控制器晶片22例如控制記憶體晶片23之記憶及讀出。再者,控制器晶片22並不限於控制記憶體晶片23,亦可以控制半導體零件6所包含之其他電子零件。
於本實施形態中,控制器晶片22及記憶體晶片23均搭載於第1面21a。然而,例如亦可以將記憶體晶片23堆疊於控制器晶片22之上。
密封樹脂25例如由包含混合有如二氧化矽般之無機物之環氧樹脂的合成樹脂製作。再者,密封樹脂25亦可以由包含其他合成樹脂之材料製作。
密封樹脂25將內插式基板21之第1面21a、控制器晶片22、記憶體晶片23、及接合線24密封。因此,密封樹脂25與第1面21a、控制器晶片22、記憶體晶片23、及接合線24接觸,且覆蓋第1面21a、控制器晶片22、記憶體晶片23、及接合線24。
控制器晶片22、記憶體晶片23、及接合線24埋入密封樹脂25。換一種表達方式,將控制器晶片22、記憶體晶片23、及接合線24收容於密封樹脂25,位於密封樹脂25之中。
密封樹脂25具有上表面25a及側面25b。上表面25a係朝向Z軸之正方向之大致平坦的密封樹脂25之外表面。側面25b係從上表面25a之緣部向Z軸之負方向延伸之密封樹脂25之外表面,朝向與Z軸交叉之方向。側面25b實質上與內插式基板21之端面21c相連。
金屬膜26與密封樹脂25之上表面25a及側面25b接觸且覆蓋密封樹脂25。於本實施形態中,金屬膜26亦覆蓋內插式基板21之端面21c。金屬膜26例如藉由濺鍍而附著於密封樹脂25。金屬膜26亦可以藉由如膏之塗佈等其他方法製作。
金屬膜26具有上表面26a及側面26b。上表面26a係朝向Z軸之正方向之大致平坦之金屬膜26之外表面。側面26b係從上表面26a之緣部向Z軸之負方向延伸之金屬膜26之外表面,朝向大致與Z軸交叉之方向。
金屬膜26隔著密封樹脂25覆蓋控制器晶片22及記憶體晶片23。金屬膜26係遮蔽控制器晶片22及記憶體晶片23釋放之電磁波、或外部之電磁波之電磁屏蔽件。
導熱體7將基板5與半導體零件6之金屬膜26連接。導熱體7整體具有導電性並且導熱率高於密封樹脂25。再者,導熱體7只要在基板5與金屬膜26之間的熱路徑中,導熱率高於密封樹脂25即可。因此,導熱體7亦可以包含導熱率低於密封樹脂25之部分。而且,導熱體7亦可以包含絕緣性之部分。導熱體7包含金屬部件41、第1膏42、及第2膏43。
如圖2所示,金屬部件41形成為對應於基板5之接地焊墊19之大致四邊形的環狀。再者,金屬部件41之形狀並不限於該例,例如亦可為棒狀。金屬部件41之導熱率高於密封樹脂25。
圖3係概略性地表示第1實施形態之半導體裝置1之一部分的例示性俯視圖。於圖3中,出於方便,省略第1膏42及第2膏43。如圖3所示,於朝向基板5之表面5a之俯視下,金屬部件41包圍半導體零件6並與其隔開間隔。換言之,金屬部件41於與Z軸交叉之方向上,與半導體零件6分離。再者,半導體零件6亦可以於與Z軸交叉之方向上,與金屬部件41部分地重疊。
如圖1所示,金屬部件41覆蓋接地焊墊19。金屬部件41藉由第2膏43接著於設置於表面5a之接地焊墊19。再者,金屬部件41亦可以進一步接著於由阻焊劑14形成之表面5a的其他部分。而且,金屬部件41亦可以藉由如焊料等其他方法連接於接地焊墊19。
第2膏43係所謂導熱膏。第2膏43例如包含熱固性之合成樹脂及銀填料。因此,第2膏43具有導電性,並且具有高於密封樹脂25之導熱率。例如,第2膏43之導熱率為50 W/mK以上,但並不限於該值。再者,第2膏43亦可以包含矽來代替銀填料,從而具有絕緣性。以上之第2膏43之材料為一例,並不限於該等示例。
第2膏43在附著於金屬部件41及接地焊墊19之狀態下固化。因此,第2膏43將金屬部件41固定於接地焊墊19。再者,第2膏43亦可以不固化而具有流動性。金屬部件41藉由第2膏43而熱性連接及電性連接於接地焊墊19。
第1膏42與第2膏43同樣為所謂導熱膏。第1膏42例如包含熱固性之合成樹脂及銀填料。因此,第1膏42具有導電性,並且具有高於密封樹脂25之導熱率。例如,第1膏42之導熱率為50 W/mK以上,但不限於該值。再者,第1膏42亦可以包含矽代替銀填料,而具有絕緣性。以上之第1膏42之材料為一例,並不限於該等示例。
第1膏42在附著於金屬膜26之側面26b及金屬部件41之狀態下固化。因此,第1膏42將金屬膜26熱性連接及電性連接於金屬部件41。再者,第1膏42亦可以不固化而具有流動性。
第1膏42經由金屬部件41及第2膏43,將金屬膜26與基板5之接地焊墊19熱性連接及電性連接。因此,從控制器晶片22及記憶體晶片23產生之熱經由密封樹脂25、金屬膜26、第1膏42、金屬部件41、及第2膏43,傳導至接地焊墊19。傳導至接地焊墊19之熱例如釋放至如搭載半導體裝置1之伺服器或個人電腦的裝置。
如圖3所示,第1膏42具有距控制器晶片22較距記憶體晶片23更近之部分P。控制器晶片22較記憶體晶片23更容易變成高溫。從控制器晶片22產生之熱能夠通過附近之第1膏42釋放。
如圖1所示,金屬膜26經由第1膏42、金屬部件41、第2膏43、及接地焊墊19電性連接於接地17。金屬膜26能夠將所吸收之電磁噪聲釋放至接地17。
以下,對半導體零件6及導熱體7之搭載方法之一部分進行例示。再者,半導體零件6及導熱體7之搭載方法並不限於以下方法,亦可以使用其他方法。首先,將半導體零件6之端子31連接於基板5之電極18。例如藉由回流焊,將端子31之焊球36連接於電極18。
繼而,利用點膠機,將第2膏43塗佈於接地焊墊19。進而,將金屬部件41載置於第2膏43之上,並藉由第2膏43接著於接地焊墊19。
繼而,利用點膠機,將第1膏42供給至金屬部件41與金屬膜26之間。第1膏42附著於金屬部件41及金屬膜26。繼而,藉由將第2膏43及第1膏42熱固化,完成半導體零件6及導熱體7之搭載。
藉由調整第1膏42之黏度,抑制第1膏42進入至基板5與內插式基板21之間的間隙。然而,第1膏42存在進入至基板5與內插式基板21之間的間隙之可能性。
如上所述,接地端子31C配置於較信號端子31A及電源端子31B更靠外側。因此,接地端子31C較信號端子31A及電源端子31B更靠近導熱體7。
進入至基板5與內插式基板21之間的間隙之第1膏42相較於附著於信號端子31A及電源端子31B,更容易附著於接地端子31C。該情形時,金屬膜26及金屬部件41經由第1膏42電性連接於接地端子31C及接地17。然而,金屬膜26及金屬部件41通常經由接地焊墊19電性連接於接地17。因此,抑制接地端子31C產生短路。
複數個接地端子31C沿著內插式基板21之端面21c排列。因此,接地端子31C阻擋第1膏42,抑制第1膏42附著於信號端子31A及電源端子31B。以上,對第1膏42代表性地進行了說明,第2膏43亦同樣如此。
於以上所說明之第1實施形態之半導體裝置1中,導熱體7附著於半導體零件6之金屬膜26,將基板5與金屬膜26連接,且導熱率高於密封樹脂25。藉此,控制器晶片22及記憶體晶片23發出之熱能夠經由密封樹脂25、金屬膜26、及導熱體7傳導至基板5。因此,控制器晶片22及記憶體晶片23能夠進一步散熱。
基板5具有設置於表面5a之接地焊墊19。導熱體7將金屬膜26與接地焊墊19連接。藉此,相較於導熱體7將如阻焊劑14等基板5之其他部分與金屬膜26連接之情形,能夠將控制器晶片22及記憶體晶片23發出之熱經由導熱體7高效率地傳導至基板5。因此,控制器晶片22及記憶體晶片23能夠高效率地散熱。
導熱體7為導電性,接地焊墊19連接於接地17。藉此,半導體零件6之金屬膜26經由導熱體7電性連接於接地17。因此,能夠使金屬膜26作為電磁屏蔽件之性能提高。
接地端子31C經由接地電極18C連接於接地17,並且較信號端子31A及電源端子31B更靠近導熱體7。因此,導熱體7之第1膏42即便進入至內插式基板21之第2面21b與基板5之表面5a之間,亦較信號端子31A或電源端子31B更容易附著於接地端子31C。因此,抑制因第1膏42附著於信號端子31A或電源端子31B引起的短路。
導熱體7包含附著於金屬膜26之第1膏42。藉此,導熱體7例如能夠由如點膠機般的裝置容易地設置。
導熱體7包含熱性連接及電性連接於接地焊墊19之金屬部件41。第1膏42附著於該金屬部件41。亦即,半導體零件6之金屬膜26經由第1膏42及金屬部件41,而連接於基板5之接地焊墊19。一般而言,金屬部件41與合成樹脂相比,熱阻小且表面積大,因此能夠將控制器晶片22及記憶體晶片23發出之熱高效率地傳導至基板5。因此,控制器晶片22及記憶體晶片23能夠高效率地散熱。
於朝向表面5a之俯視下,金屬部件41包圍半導體零件6。藉此,金屬部件41之表面積變大,能夠將控制器晶片22及記憶體晶片23發出之熱高效率地傳導至基板5。因此,控制器晶片22及記憶體晶片23能夠高效率地散熱。
第1膏42包含熱固性樹脂。藉此,藉由使第1膏42固化而防止該第1膏42從金屬膜26剝離。進而,可以與塗佈於其他電子零件之底部填充膠之固化同時地進行第1膏42之固化。因此,抑制作業步驟之增加,從而抑制半導體裝置1成本之增加。
導熱體7包含第2膏43,該第2膏43包含熱固性樹脂,附著於金屬部件41及接地焊墊19,導熱率高於密封樹脂25,且具有導電性。第1膏42及第2膏43經固化。藉此,金屬部件41與接地焊墊19藉由第2膏43電性連接。進而,可以同時進行第1膏42及第2膏43之固化,抑制作業步驟之增加,從而抑制半導體裝置1成本增加。而且,第1膏42及第2膏43如底部填充膠般,將半導體零件6牢固地固定於基板5。藉此,抑制端子31與電極18之間的連接部分損傷。
導熱體7具有相較於記憶體晶片23更靠近控制器晶片22之部分P。一般而言,控制器晶片22較記憶體晶片23更容易變成高溫。因此,能夠將控制器晶片22之熱經由密封樹脂25、金屬膜26、及導熱體7傳導至基板5。因此,控制器晶片22及記憶體晶片23能夠高效率地散熱。
於以上之第1實施形態中,第1膏42及第2膏43經由金屬部件41,將金屬膜26與接地焊墊19連接。然而,第1膏42或第2膏43亦可以將金屬膜26與接地焊墊19直接連接。藉此,抑制作業步驟之增加,從而抑制半導體裝置1之成本增加。
而且,於以上之第1實施形態中,將連接有導熱體7之接地焊墊19連接於接地17。然而,連接導熱體7之導體(接地焊墊19)亦可為與在基板5形成電路之導體層12電性切斷之非連接焊墊。而且,若導熱體7為絕緣性,則上述導體例如亦可以電性連接於信號電極18A或電源電極18B。
(第2實施形態) 以下,參照圖4,對第2實施形態進行說明。再者,於以下複數個實施形態之說明中,具有與已說明之構成要素相同之功能的構成要素存在被標註與該已敍述之構成要素相同的符號進而省略說明之情形。而且,標註有相同符號之複數個構成要素並不限於功能及性質全部共通,亦可以具有與各實施形態相對應之不同的功能及性質。
圖4係概略性地表示第2實施形態之半導體裝置1之一部分的剖視圖。如圖4所示,第2實施形態之半導體裝置1具有絕緣性之底部填充膠51。底部填充膠51介置於基板5之表面5a與內插式基板21之第2面21b之間。
底部填充膠51將基板5之表面5a與內插式基板21之第2面21b之間的間隙堵塞。因此,底部填充膠51位於端子31與導熱體7之間。於本實施形態中,底部填充膠51與端子31接觸,且覆蓋端子31。再者,底部填充膠51亦可以與端子31分離。
底部填充膠51例如於將端子31連接於電極18之後,由點膠機供給至基板5與內插式基板21之間。底部填充膠51例如亦可以與第1膏42及第2膏43一起熱固化。
於以上所說明之第2實施形態之半導體裝置1中,絕緣性之底部填充膠51介置於基板5之表面5a與內插式基板21之第2面21b之間,且位於端子31與導熱體7之間。藉此,抑制因導電性之第1膏42附著於端子31引起的短路。進而,由於藉由底部填充膠51將半導體零件6牢固地固定於基板5,因此抑制端子31與電極18之間的連接部分損傷。
(第3實施形態) 以下,參照圖5至圖7,對第3實施形態進行說明。圖5係概略性地表示第3實施形態之半導體裝置1之一部分的剖視圖。如圖5所示,第3實施形態之半導體裝置1與第2實施形態之不同點在於:包含搭載於基板5之表面5a的複數個半導體零件6。半導體零件6可為彼此相同的零件,亦可為互不相同的零件。而且,第3實施形態之半導體裝置1亦可以如第1實施形態般,不包含底部填充膠51。
圖6係概略性地表示第3實施形態之半導體裝置1之一部分的例示性俯視圖。如圖6所示,金屬部件41包含框部61、及中間部62。框部61形成為大致四邊形的環狀,於朝向基板5之表面5a之俯視下,包圍複數個半導體零件6。中間部62位於相鄰之兩個半導體零件6之間,且連接於框部61。
第1膏42附著於金屬膜26、框部61、及中間部62。因此,第1膏42將一個半導體零件6之金屬膜26、另一個半導體零件6之金屬膜26及接地焊墊19熱性連接及電性連接。
於以上所說明之第3實施形態之半導體裝置1中,於朝向表面5a之俯視下,金屬部件41包圍複數個半導體零件6。藉此,金屬部件41之表面積較大,而能夠將控制器晶片22及記憶體晶片23發出之熱高效率地傳導至基板5。因此,控制器晶片22及記憶體晶片23能夠高效率地散熱。
圖7係概略性地表示第3實施形態之變化例之半導體裝置1之一部分的例示性俯視圖。如圖7所示,金屬部件41具有框部61。然而,省略中間部62。相鄰之兩個半導體零件6介隔間隙而相互分離。
於圖7之變化例中,例如,在基板5之表面5a中,能夠搭載半導體零件6之區域較圖6之示例窄。因此,省略中間部62,相鄰之兩個半導體零件6之間的距離較圖6之示例短。
於以上所說明之第3實施形態之變化例中,於朝向表面5a之俯視下,框部61亦包圍複數個半導體零件6。因此,即便複數個半導體零件6之間的間隙較小,亦能夠沿著複數個半導體零件6配置金屬部件41。因此,即便對基板5中之半導體零件6之配置有制約,第1膏42亦能夠附著於金屬膜26及金屬部件41。
(第4實施形態) 以下,參照圖8,對第4實施形態進行說明。圖8係概略性地表示第4實施形態之半導體裝置1之一部分的剖視圖。如圖8所示,第4實施形態之半導體裝置1與第3實施形態之不同點在於:不包含金屬部件41、第2膏43、及接地焊墊19。再者,第4實施形態之半導體裝置1亦可以如第1實施形態般不包含底部填充膠51,還可以具有單個的半導體零件6。
於第4實施形態中,基材11具有露出部11a。露出部11a係藉由阻焊劑14之孔14a而於基板5之表面5a露出的基材11之一部分。基材11之露出部11a之表面粗糙度較阻焊劑14之表面粗糙度粗。
第1膏42附著於金屬膜26之側面26b、及藉由孔14a露出之露出部11a。因此,第1膏42將金屬膜26與基板5之基材11連接。
於以上所說明之第4實施形態之半導體裝置1中,在阻焊劑14設置使基材11之露出部11a露出之孔14a。第1膏42附著於露出部11a。一般而言,基材11之表面粗糙度較阻焊劑14之表面粗糙度粗。藉此,抑制第1膏42從基板5剝離。
於以上之複數個實施形態中,接地端子31C較信號端子31A及電源端子31B更靠近導熱體7。然而,作為變化例,亦可以使其他端子31較信號端子31A及電源端子31B更靠近導熱體7。連接該端子31之電極18係與於基板5形成電路之導體層12電性切斷的非連接焊墊。藉此,抑制因第1膏42附著於上述端子31引起的短路。上述端子31及電極18增強基板5與半導體零件6之連接部分。
根據以上所說明之至少一個實施形態,導熱體附著於半導體零件之金屬膜,將基板與金屬膜連接,且導熱率高於被覆樹脂。藉此,能夠將電子零件發出之熱經由被覆樹脂、金屬膜、及導熱體傳導至基板。因此,電子零件能夠進一步散熱。
已對本發明之若干實施形態進行了說明,但該等實施形態係作為示例而提出的,並非意圖限定發明之範圍。該等新穎之實施形態可以藉由其他各種方式實施,可於不脫離發明主旨之範圍內,進行各種省略、置換、變更。該等實施形態或其變化包含於發明之範圍或主旨中,並且包含於申請專利範圍所記載之發明及其等同的範圍內。 [相關申請]
本申請享有以日本專利申請2018-173003號(申請日:2018年9月14日)為基礎申請的優先權。本申請藉由參照該基礎申請而包含基礎申請之全部內容。
1:半導體裝置
5:基板
5a:表面
6:半導體零件
7:導熱體
11:基材
11a:露出部
12:導體層
13:通孔
14:阻焊劑
14a:孔
16:電源
17:接地
18:電極
18A:信號電極
18B:電源電極
18C:接地電極
19:接地焊墊
21:內插式基板
21a:第1面
21b:第2面
21c:端面
22:控制器晶片
22a:接著層
23:記憶體晶片
23a:接著層
24:接合線
25:密封樹脂
25a:上表面
25b:側面
26:金屬膜
26a:上表面
26b:側面
31:端子
31A:信號端子
31B:電源端子
31C:接地端子
35:焊墊
36:焊球
41:金屬部件
42:第1膏
43:第2膏
51:底部填充膠
61:框部
62:中間部
圖1係概略性地表示第1實施形態之半導體裝置之一部分的剖視圖。 圖2係將第1實施形態之半導體裝置分解而概略性地表示之例示性立體圖。 圖3係概略性地表示第1實施形態之半導體裝置之一部分的例示性俯視圖。 圖4係概略性地表示第2實施形態之半導體裝置之一部分的剖視圖。 圖5係概略性地表示第3實施形態之半導體裝置之一部分的剖視圖。 圖6係概略性地表示第3實施形態之半導體裝置之一部分的例示性俯視圖。 圖7係概略性地表示第3實施形態之變化例之半導體裝置之一部分的例示性俯視圖。 圖8係概略性地表示第4實施形態之半導體裝置之一部分的剖視圖。
1:半導體裝置
5:基板
5a:表面
6:半導體零件
7:導熱體
11:基材
12:導體層
13:通孔
14:阻焊劑
14a:孔
16:電源
17:接地
18:電極
18A:信號電極
18B:電源電極
18C:接地電極
19:接地焊墊
21:內插式基板
21a:第1面
21b:第2面
21c:端面
22:控制器晶片
22a:接著層
23:記憶體晶片
23a:接著層
24:接合線
25:密封樹脂
25a:上表面
25b:側面
26:金屬膜
26a:上表面
26b:側面
31:端子
31A:信號端子
31B:電源端子
31C:接地端子
35:焊墊
36:焊球
41:金屬部件
42:第1膏
43:第2膏
Claims (20)
- 一種半導體裝置,其具備:基板;於上述基板上之半導體零件,其包含:內插式基板;1個或複數個半導體元件晶片(semiconductor device chip),其於上述內插式基板之第1面上;被覆樹脂,其與上述內插式基板之上述第1面及上述1個或複數個半導體元件晶片接觸且將上述1個或複數個半導體元件晶片封入(enclosing);及金屬膜,其與上述被覆樹脂之上表面及側面接觸且覆蓋上述被覆樹脂;金屬部件,其設置於上述基板,且與上述基板熱接觸,上述金屬部件未與上述半導體零件直接接觸,且自上述半導體裝置上方觀察時,未與上述半導體零件重疊;及導熱體,其與上述基板及上述金屬膜熱接觸,且導熱率高於上述被覆樹脂。
- 如請求項1之半導體裝置,其中上述內插式基板包含:1個或複數個端子,其位於上述第1面之相反側之第2面;上述基板係於與上述內插式基板之上述第2面對向之面,包含與上述 1個或複數個端子接觸之1個或複數個電極、及1個或複數個導電性焊墊,上述1個或複數個導電性焊墊未與上述半導體零件直接接觸,且自上述半導體裝置上方觀察時,未與上述半導體零件重疊,且上述導熱體與上述1個或複數個導電性焊墊熱接觸。
- 如請求項2之半導體裝置,其中上述導熱體為導電性,且上述1個或複數個導電性焊墊係電性連接於接地。
- 如請求項3之半導體裝置,其中上述1個或複數個電極具有:供電信號通過之信號電極、連接於電源之電源電極、及連接於上述接地之接地電極,且上述1個或複數個端子具有:連接於上述信號電極之信號端子、連接於上述電源電極之電源端子、及連接於上述接地電極之接地端子,上述接地端子較上述信號端子及上述電源端子更靠近上述導熱體。
- 如請求項3之半導體裝置,其中上述導熱體包含:第1膏,其與上述金屬膜接觸,導熱率高於上述被覆樹脂,且為導電性。
- 如請求項5之半導體裝置,其中上述第1膏與上述金屬膜及上述金屬部件接觸。
- 如請求項6之半導體裝置,其中自上述半導體裝置上方觀察時,上述金屬部件包圍上述半導體零件。
- 如請求項6之半導體裝置,其中上述1個或複數個半導體元件晶片包括複數個半導體晶片,且自上述半導體裝置上方觀察時,上述金屬部件包圍上述複數個半導體晶片。
- 如請求項6之半導體裝置,其中上述第1膏包含熱固性樹脂。
- 如請求項9之半導體裝置,其中上述導熱體進而包含第2膏,該第2膏包含熱固性樹脂,並附著於上述金屬部件及上述導電性焊墊,導熱率高於上述被覆樹脂,且為導電性;且上述第1膏及上述第二膏不具有流動性。
- 如請求項2之半導體裝置,其進而具備:電性絕緣之底部填充膠,其位於上述基板之上述面與上述內插式基板之上述第2面之間。
- 如請求項1之半導體裝置,其中上述基板包含:基材、及阻焊劑,該阻焊劑覆蓋上述基材且設置於上述基材與上述半導體零件之間;於上述阻焊劑,設置有使上述基材之一部分露出之孔,且上述導熱體與經由上述孔而露出之上述基材之一部分接觸。
- 如請求項1之半導體裝置,其中 上述導熱體包含膏,上述膏與上述金屬膜接觸,且導熱率高於上述被覆樹脂。
- 如請求項1之半導體裝置,其中上述1個或複數個半導體元件晶片包括記憶體晶片。
- 如請求項14之半導體裝置,其中上述1個或複數個半導體元件晶片進而包括:控制上述記憶體晶片之控制器晶片。
- 如請求項15之半導體裝置,其中上述導熱體具有相較於上述記憶體晶片更靠近上述控制器晶片之部分。
- 一種半導體裝置,其具備:第1基板;於上述第1基板上之半導體晶片封裝,其包含:第2基板、於上述第2基板上之半導體晶片、覆蓋上述半導體晶片之樹脂、及與上述樹脂之上表面及側面接觸且覆蓋上述樹脂之金屬膜;金屬部件,其設置於上述第1基板,且與上述第1基板熱接觸,上述金屬部件未與上述半導體晶片封裝直接接觸,且自上述半導體裝置上方觀察時,未與上述半導體晶片封裝重疊;及導熱體,其與上述第1基板及上述金屬膜熱接觸,且導熱率高於上述樹脂。
- 如請求項17之半導體裝置,其中上述第2基板在上述第2基板之下表面,包含端子及導電性焊墊;且上述第1基板包含:電極,其與在上述第2基板之上述下表面之上述端子接觸;且上述導熱體與上述導電性焊墊熱接觸。
- 如請求項17之半導體裝置,其中上述導電性焊墊電性連接於接地。
- 如請求項18之半導體裝置,其中上述端子係:信號端子、電源端子、及接地端子之任一者;且上述電極係:信號電極、電源電極、及接地電極之任一者。
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