TWI773497B - 複合燒結體、半導體製造裝置構件及複合燒結體的製造方法 - Google Patents
複合燒結體、半導體製造裝置構件及複合燒結體的製造方法 Download PDFInfo
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- TWI773497B TWI773497B TW110131236A TW110131236A TWI773497B TW I773497 B TWI773497 B TW I773497B TW 110131236 A TW110131236 A TW 110131236A TW 110131236 A TW110131236 A TW 110131236A TW I773497 B TWI773497 B TW I773497B
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- 239000002131 composite material Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 25
- 239000000463 material Substances 0.000 claims abstract description 68
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 54
- 238000010304 firing Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 30
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 28
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 description 36
- 239000000843 powder Substances 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 29
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 25
- 239000000203 mixture Substances 0.000 description 21
- 239000006185 dispersion Substances 0.000 description 16
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 14
- 239000000395 magnesium oxide Substances 0.000 description 14
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 14
- 239000002003 electrode paste Substances 0.000 description 13
- 238000007731 hot pressing Methods 0.000 description 12
- 238000002156 mixing Methods 0.000 description 12
- 239000002904 solvent Substances 0.000 description 10
- 239000010419 fine particle Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 229910020068 MgAl Inorganic materials 0.000 description 6
- 229910019092 Mg-O Inorganic materials 0.000 description 5
- 229910019395 Mg—O Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000007580 dry-mixing Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/54—Particle size related information
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Abstract
複合燒結體20具備:基材,以陶瓷作為主材料;以及電極23,配置於此基材的內部或表面。電極23包含W和ZrO
2。藉此,可以減少電極23與基材的熱膨脹係數的差。其結果為,可以抑制由電極23與基材的熱膨脹係數的差所引起的基材的裂紋、及抑制電極23的剝離。並且,複合燒結體20也可以抑制電極23的電阻率的增大。其結果為,可以精度良好地控制由電極23產生的熱量。
Description
本發明是關於複合燒結體、半導體製造裝置構件以及複合燒結體的製造方法。
[交互參照]本申請主張於2020年9月15日提交的日本特許申請JP2020-154641的優先權,並且該申請的所有公開內容通過引用併入本文。
歷來,在半導體基板的製造裝置等中,使用吸附保持半導體基板的靜電吸盤、加熱半導體基板的加熱器、組合這些的靜電吸盤加熱器等的承載基座(Susceptor)。此承載基座具備:基材,以氧化鋁等的陶瓷的燒結體作為主材料;電極,配置於此基材的內部等。
上述的承載基座,例如,藉由一體地燒成基材與電極而形成。此燒成中,有由基材的熱膨脹係數與電極的熱膨脹係數的差而產生不良影響的疑慮。例如,有基材產生裂紋、電極從基材上剝離的疑慮。
對此,在日本特開2005-343733號公報(文獻1)中提出了一種與氧化鋁燒結體的基材一起燒成的電極中,經由在WC等高熔點的主材料中添加5重量%~30重量%的氧化鋁(即基材成分)的材料而形成此電極,藉此提高基材與電極的附著性的技術。
並且,在日本特開2011-168472號公報(文獻2)中提出了一種燒結體,具有將MgF
2等添加到氧化鋁中的基材,以及將WC作為主材料並添加Ni、Co和氧化鋁的電極。如上所述,在電極中添加氧化鋁是為了提高基材與電極的附著性。在電極中添加Ni和Co的目的是藉由添加MgF
2來提高設定在較低的燒成溫度(例如,1120℃~1300℃)下的電極的燒結性。
另一方面,在日本特開2013-229310號公報(文獻3)中提出了一種陶瓷加熱器,具有將氧化鋁作為主材料的基材,以及取代上述WC而使用Mo作為主材料的電極。此電極中,為了改善電阻率的溫度依存性的反轉現象,將Ti-Al-Mg-O複合氧化物分散在Mo中。
但是,在文獻1與文獻2中,藉由在主材料為WC的電極中添加基材成分,使電極與基材的熱膨脹係數的差在一定程度上減少,但熱膨脹係數的差的減少是有限的。
並且,在承載基座中,對於用於基材的氧化鋁材料,由於追求高電阻率、高絕緣耐壓、顆粒的產生風險的降低等,需要高度純化的氧化鋁材料,其結果為,製造承載基座時的燒成溫度將高溫化(例如,1500℃以上)。因此,當如文獻1和文獻2中那樣使用WC作為電極材料時,由於藉由高溫燒成使WC的一部分被氧化而生成W
2C,有WC與W
2C的含量變動而使電極的特性(例如,電阻率、熱膨脹係數等)不穩定的疑慮。此外,藉由WC的氧化過程中產生的CO氣體,也有使電極周圍產生氣孔而降低基材的絕緣耐壓的疑慮。
進一步地,在文獻2中,由於電極中含有的Ni和Co的熔點比較低,因此在1500℃以上的高溫燒成中難以維持形狀。此外,由於Ni和Co是磁性材料,當此電極用於靜電吸盤時,也有阻礙藉由庫侖力引起的吸附力的疑慮。
另一方面,在文獻3中,藉由Ti-Al-Mg-O複合氧化物,具有在一定程度上減少電極與基材的熱膨脹係數的差的可能性。但是,由於Ti-Al-Mg-O複合氧化物是藉由燒成中的反應而生成,其生成量不穩定,有電極的特性(例如,電阻率、熱膨脹係數等)不穩定的疑慮。另外,由於電極中的Ti-Al-Mg-O複合氧化物粗大,Ti-Al-Mg-O複合氧化物的分佈不均勻,也有難以穩定地控制電極特性的疑慮。
本發明涉及一種複合燒結體,本發明的目的為在抑制電極的電阻率增大的同時,減少電極與基材的熱膨脹係數的差。
本發明的一個較佳形態的複合燒結體具備以陶瓷作為主材料的基材,以及配置在所述基材的內部或表面的電極。所述電極包含鎢和氧化鋯。
藉由此複合燒結體,可以抑制電極的電阻率的增大的同時,減少電極與基材的熱膨脹係數的差。
較佳地,在40℃以上且1000℃以下的範圍內,所述電極和所述基材的熱膨脹係數的差的絕對值為0.5ppm/℃以下。
較佳地,所述電極在室溫下的電阻率為3.5×10
-5Ω.cm以下。
較佳地,在所述電極中,藉由X射線繞射法所獲得的所述鎢和所述氧化鋯的主峰的強度比為0.90以上且未滿0.96。
較佳地,所述電極中的所述鎢和所述氧化鋯的總含量為100體積%。
較佳地,所述氧化鋯的燒結粒徑為0.7μm以上且3.0μm以下。
較佳地,所述氧化鋯的燒結粒徑與所述鎢的燒結粒徑的差的絕對值為0.5μm以下。
較佳地,所述基材的主材料為氧化鋁。所述基材中的所述氧化鋁的含量為95質量%以上。
本發明還涉及在半導體製造裝置中使用的半導體製造裝置構件。使用上述的複合燒結體來製造此半導體製造裝置構件。所述基材為圓盤狀。所述基材的主表面上載置有半導體基板。
本發明還涉及一種複合燒結體的製造方法,此複合燒結體的製造方法具備下列步驟:a)準備第一構件與第二構件,其是以陶瓷作為主材料的成形體、煅燒體或燒結體,b)將含有鎢和氧化鋯的電極或所述電極的前驅物配置在所述第一構件上後,積層所述第二構件以形成積層體,c)將所述積層體熱壓燒成。
較佳地,在所述c)步驟終了後,在40℃以上且1000℃以下的範圍內,所述電極與所述第一構件和所述第二構件的熱膨脹係數的差的絕對值為0.5ppm/℃以下。
較佳地,所述步驟c)中的燒成溫度為1550℃以上且1650℃以下。
上述目的和其他目的、特徵、態樣及優點,藉由參照所附圖式而在以下進行的本發明的詳細說明明確呈現。
圖1是關於本發明一實施形態的承載基座1的剖面圖。承載基座1是用於半導體製造裝置中的半導體製造裝置構件。承載基座1從圖1的下側支撐大致圓盤狀的半導體基板9(以下,簡稱為「基板9」)。在以下的說明中,將圖1中的上側及下側簡稱為「上側」及「下側」。此外,將圖1中的上下方向簡稱為「上下方向」。圖1中的上下方向與承載基座1設置在半導體製造裝置中時實際的上下方向不必一致。
承載基座1具備本體部21、底座部22、電極23。本體部21是以陶瓷為主材料的大致板狀(例如,大致圓盤狀)的基材。本體部21的上側的主表面(即,上表面)上載置有基板9。底座部22是在平視時比本體部21大的大致板狀(例如,大致圓盤狀)的構件。本體部21安裝在底座部22上。在圖1所示的例子中,電極23配置(即,嵌入)於本體部21的內部。電極23例如是在平視時描繪成預定圖案的大致帶狀的構件。電極23較佳地藉由具有相對高熔點的材料形成。本體部21和電極23是藉由多數的材料形成的複合燒結體。在以下的說明中,將本體部21和電極23統稱為「複合燒結體20」。關於本體部21和電極23的材料於後續說明。其中,電極23的形狀可以以各種方式改變。此外,電極23可以設置在本體部21的表面上。
在圖1所示的例子中,承載基座1是經由向電極23施加直流電壓而產生的熱量,藉此加熱基板9的加熱器。即,電極23是加熱基板9的電阻發熱體。在承載基座1中,除了電極23之外,利用庫侖力或約翰遜-拉貝克(Johnsen-Rahbek)力對基板9進行靜電吸引的卡盤用電極,可以設置在本體部21內部。或者,電極23可利用作卡盤用電極。
本體部21例如由作為主材料的氧化鋁(Al
2O
3)形成。在本體部21中,可以向Al
2O
3添加如氧化鎂(MgO)及/或鎂鋁尖晶石(MgAl
2O
4)等的添加材料。在本體部21中,作為主材料的Al
2O
3的含量,例如為95質量%以上且100質量%以下,較佳為99質量%以上且100質量%以下。本體部21中Al
2O
3的含量,根據所需本體部21的材料特性進行調整。其中,本體部21的主材料不限於Al
2O
3,也可以是其他的陶瓷。
電極23包含鎢(W)和氧化鋯(ZrO
2)。在本實施形態中,電極23實質上僅由W和ZrO
2形成,並且實質上不包含W和ZrO
2以外的物質。換句話說,在本實施形態中,電極23中的W和ZrO
2的總含量為100體積%。
電極23中的W和ZrO
2的含量,以使電極23和本體部21的熱膨脹係數的差實質上接近0的方式進行調整。此外,在電極23中,藉由X射線繞射法(XRD)獲得的W和ZrO
2的主峰的強度比(以下也稱為「W-ZrO
2峰值比」),例如為0.90以上且未滿0.96,並且以使電極23和本體部21的熱膨脹係數的差實質上接近0的方式進行調整。W-ZrO
2峰值比是將W的主峰強度除以W的主峰強度與ZrO
2的主峰強度的總和而算出的值。
W的熱膨脹係數(也稱為熱膨脹率)在40℃以上且1000℃以下的範圍內為5.3ppm/℃(即ppm/K)。以下說明中的熱膨脹係數,在沒有記載溫度條件的情況下,是指40℃以上且1000℃以下的範圍內的熱膨脹係數。ZrO
2的熱膨脹係數為10.5ppm/℃。Al
2O
3的熱膨脹係數為8.0ppm/℃。本體部21的熱膨脹係數根據添加到主材料Al
2O
3中的添加材料的種類和比例而變化,例如為8.1ppm/℃~8.3ppm/℃。
電極23中所包含的W的熱膨脹係數低於本體部21的熱膨脹係數。電極23中所包含的ZrO
2的熱膨脹係數高於本體部21的熱膨脹係數。40℃以上且1000℃以下的範圍內的電極23與本體部21的熱膨脹係數的差的絕對值(以下,也稱為「CTE差」),例如為0.5ppm/℃以下,較佳為0.2ppm/℃以下。CTE差的下限沒有特別限定,可為0.0ppm/℃以上。
電極23的室溫電阻率例如為3.5×10
-5Ω.cm以下,較佳為3.0×10
-5Ω.cm以下。此電阻率的下限沒有特別限定,例如為1.0×10
-5Ω.cm以上。
電極23如後續所述,是藉由與本體部21一起、或與本體部21分別燒成而形成的燒結體。燒成溫度例如是1500℃以上的高溫。其中,W的熔點為3410℃,ZrO
2的熔點為2715℃。W的燒結粒徑例如為0.7μm以上且3.0μm以下,較佳為1.0μm以上且2.0μm以下。ZrO
2的燒結粒徑例如為0.7μm以上且3.0μm以下,較佳為1.0μm以上且2.0μm以下。ZrO
2的燒結粒徑與W的燒結粒徑的差的絕對值(以下,簡稱為「燒結粒徑差」),例如為0.5μm以下,較佳為0.25μm以下。燒結粒徑差的下限沒有特別限定,例如為0.0μm以上。W和ZrO
2的燒結粒徑可以藉由使用SEM(掃描型電子顯微鏡)等觀察微結構而求出。
圖2是後續所述實施例10的複合燒結體20的剖面的SEM圖像。圖2中的上下方向的中央部的發白區域對應於電極23。並且,電極23的下側的黑色帶狀的區域對應於本體部21的第一構件,電極23的上側的黑色帶狀的區域對應於本體部21的第二構件。在對應於電極23的區域中,最淺色的白色的區域是W,比W更深色的灰色的區域是ZrO
2。在複合燒結體20中,如上所述,藉由減小電極23中燒結粒徑差,使電極23中的W和ZrO
2的分散的均勻性提高。
接著參照圖3,同時對關於承載基座1的本體部21和電極23(即,複合燒結體20)的製造方法的一例進行說明。在此例中,製作本體部21的下半部分的大致圓盤狀的部分(以下稱為「第一構件」),與上半部分的大致圓盤狀部分(以下稱為「第二構件」),藉由將電極23的材料夾在第一構件和第二構件之間進行燒成,製造本體部21和電極23。
在此製造方法中,首先,準備本體部21的第一構件和第二構件(步驟S11)。在步驟S11中準備的第一構件和第二構件,可以是成形體、煅燒體和燒結體的任一的狀態。在步驟S11中,首先,使本體部21(即第一構件和第二構件)的原料粉末成為預定的組成的方式進行秤量,將此原料粉末濕式混合,然後藉由單軸加壓成形等,成形為預定形狀的成形體。
在步驟S11中,作為Al
2O
3原料,例如,使用市售的高純度微粒粉末。並且,當本體部21中含有MgO時,作為MgO原料,例如,使用市售的高純度微粒粉末。當本體部21包含MgAl
2O
4時,例如,將上述的市售的MgO粉末和市售的Al
2O
3的高純度微粒粉末進行加熱合成,作為MgAl
2O
4原料而使用。或者,作為MgAl
2O
4原料,可以使用市售的MgAl
2O
4的高純度微粒粉末。Al
2O
3原料、MgO原料和MgAl
2O
4原料的純度與平均粒徑等適當決定。
在步驟S11中,原料粉末的混合條件(例如,混合時間、溶劑種類等)適當決定。作為此溶劑,例如,可以使用有機溶劑或離子交換水。並且,在步驟S11中,可以藉由乾式混合來混合原料粉末。
在步驟S11中,成形體的成形條件(例如,被施加的壓力等)適當決定。當成形體的形狀為板狀時,可以藉由將原料粉末填充到熱壓模具等使成形體進行成形。此成形體的成形只要可以保持形狀,可以藉由各種其他方法進行。例如,可以將濕式混合後的漿料,保持具有流動性的狀態注入模具後除去溶劑成分,成為預定形狀的成形體。或者,可以藉由利用刮刀等的帶成形法,形成預定量的帶成形體。
在步驟S11中,當準備第一構件及/或第二構件的煅燒體或燒結體時,將藉由上述的方法形成的成形體經由熱壓法等進行燒成,形成煅燒體(即,煅燒結體)或燒結體。此成形體的燒成時的燒成條件(例如壓製壓力、燒成溫度、燒成時間等)適當決定。此外,此成形體的燒成也可以藉由熱壓法以外的方法進行。
接著,使電極23的原料粉末成為預定的組成的方式進行秤量,將此原料粉末混合後,與溶劑和黏合劑等混煉,生成作為電極23的前驅物的電極糊(步驟S12)。在步驟S12中,作為W原料和ZrO
2原料,例如,使用市售的高純度微粒粉末。W原料和ZrO
2原料的純度和平均粒徑等適當決定。W原料和ZrO
2原料的平均粒徑,例如,未滿1μm。
上述的電極23的原料粉末的混合,例如,藉由濕式混合來進行。原料粉末的混合條件(例如,混合時間、溶劑種類等)適當決定。作為此溶劑,例如,可以使用有機溶劑或離子交換水。其中,在步驟S12中,可以藉由乾式混合來混合原料粉末。在步驟S12中,與原料粉末一起混煉的上述溶劑(例如,有機溶劑)和黏合劑的種類適當決定。其中,步驟S12可以在步驟S11之前進行、或與步驟S11同時進行。
步驟S12所生成的電極糊在步驟S11所形成的第一構件的上表面上,藉由網版印刷等以賦予其預定的形狀(步驟S13)。步驟S13中將電極糊賦予至成形體的第一構件上時,第一構件例如是帶成形體。其中,在步驟S13中,電極糊的塗佈可以藉由網版印刷以外的方法進行。當第一構件是成形體或煅燒體時,準確地說,將電極糊賦予到第一構件的前驅物的上表面。然後,將電極糊在空氣中等乾燥預定時間(例如,1小時)之後,在第一構件和電極糊的上方,將第二構件積層以形成積層體(步驟S14)。
其中,複合燒結體20的製造中,代替上述的步驟S13~S14,將步驟S12所生成的電極糊單體燒成而形成電極23,此電極23可以配置在第一構件的上表面上,第二構件可以積層在第一構件和電極23上。
之後,在步驟S14中所形成的積層體,藉由熱壓法等燒成,藉此使第一構件和第二構件一體化,形成本體部21和電極23(即,複合燒結體20)(步驟S15)。步驟S15中的燒成條件(例如,壓製壓力、燒成溫度、燒成時間等)適當決定。步驟S15中的燒成溫度(即,煅燒成時的最高溫度),例如為1550℃以上且1650℃以下。步驟S15中的積層體的燒成可以藉由熱壓法以外的方法進行。
接著,參照表1~表3,同時對本發明的複合燒結體20(即,本體部21和電極23)的實施例1~實施例13,以及為了與複合燒結體20進行比較的比較例1~比較例4的複合燒結體進行說明。實施例1~實施例13中,相對於電極23含有W和ZrO2,比較例1~比較例4中,電極23不含ZrO2,比較例1~比較例2中,電極23也不含W。
在實施例1~實施例13和比較例1~比較例4中,本體部21和電極23的製造是藉由上述的步驟S11~步驟S15來進行。在實施例1~實施例13和比較例1~比較例4中,步驟S11中使用MgO作為Al2O3的添加劑。作為Al2O3原料,使用市售的Al2O3的高純度微粒粉末(純度99.99%以上,平均粒徑0.5μm)。此外,作為MgO原料,使用市售的MgO的高純度微粒粉末(純度99.9%以上、平均粒徑1μm以下)。
在實施例1~實施例13和比較例1~比較例4中,步驟S11中的原料粉末的濕式混合是藉由使用氧化鋁球和圓筒型塑膠罐(polypot)的球磨機來進行。混合時間為20小時,使用的溶劑為有機溶劑。將藉由濕式混合所生成的漿料,進行乾燥後過篩,藉此得到本體部21的原料粉末。此外,步驟S11中成形體的成形,是藉由在單軸加壓成形用的模具中填充原料粉末來進行。此單軸加壓成形時的壓力為100kgf/cm
2。得到的成形體為直徑50mm、厚度10mm的大致圓盤狀。其中,在實施例1~實施例13和比較例1~比較例4中,製作比實際的複合燒結體20小的試驗體並使用之。
在實施例1~實施例13和比較例1~比較例4中,步驟S12中,作為W原料和ZrO
2原料,使用市售的W的高純度微粒粉末(純度99.9%以上,平均粒徑0.8μm),以及,使用ZrO
2的高純度微粒粉末(純度99%以上,平均粒徑0.4μm)。
在實施例1~實施例13和比較例1~比較例4中,步驟S12中的原料粉末的濕式混合是藉由使用氧化鋁球和圓筒型塑膠罐的球磨機來進行。混合時間為20小時,使用的溶劑為有機溶劑。將藉由濕式混合所生成的漿料,進行乾燥後過篩,藉此得到電極23的原料粉末。另外,在生成電極糊時,作為與此原料粉末混煉的溶劑和黏合劑,使用丁基卡必醇和聚甲基丙烯酸正丁酯。
在實施例1~實施例13和比較例1~比較例4中,步驟S13中的電極糊的塗佈是藉由網版印刷進行。塗佈在第一構件上的電極糊的形狀是寬5mm、長15mm的大致矩形。電極糊的厚度為60μm~70μm。
在實施例1~實施例13和比較例1~比較例4中,步驟S13、S14中,作為第一構件和第二構件,使用成形體、煅燒體或燒結體的任一者。當作為第一構件或第二構件使用成形體時,使用在上述的步驟S11所得到的成形體。
當作為第一構件或第二構件使用煅燒體時,通過與前述成形體相同的方法製作成形體,並通過熱處理製作。燒成溫度(即,熱處理時的最高溫度)為800℃以上且1000℃以下。然後,將得到的煅燒體加工成直徑50mm、厚度5mm的大致圓盤狀。其中,煅燒體通過在原料粉末中添加有機黏合劑等的成形助劑,對已保持形狀的成形品加熱處理等製作方法,適當採用既存的方法即可,其製作條件不限於上述。
當作為第一構件或第二構件使用燒結體時,藉由熱壓法進行成形體的燒成。具體來說,將上述的成形體裝入熱壓用的石墨模具中,設置在熱壓爐中進行燒成。煅燒成時的壓製壓力為200kgf/cm
2。燒成溫度(即,煅燒成時的最高溫度)為1550℃以上且1650℃以下。燒成時間為8小時。升溫速度和降溫速度為300℃/h。當升溫至1000℃時,將燒成環境進行抽真空,然後引入氮氣。引入氮氣後的氣壓維持在約1.5atm(約0.152MPa)。當降溫時,溫度控制在1400℃停止並冷卻爐子。然後,將得到的燒結體加工成直徑50mm、厚度5mm的大致圓盤狀。
在實施例1~實施例13和比較例1~比較例4中,步驟S15中積層後的燒成是藉由熱壓法進行。具體來說,將上述的積層體裝入熱壓用的石墨模具中,設置在熱壓爐中進行燒成。燒成時的壓製壓力為200kgf/cm
2。燒成溫度(即,燒成時的最高溫度)為1550℃以上且1650℃以下。燒成時間為4小時~8小時。升溫速度和降溫速度為300℃/h。燒成環境是氮氣環境。
在表1~表3中,基材(即,本體部21的第一構件和第二構件)的熱膨脹係數是使用從本體部21所切出的燒結體試樣,藉由根據JIS-R1618的方法在40℃~1000℃的範圍內測量。並且,實施例1~實施例13的電極23的熱膨脹係數,是基於W和ZrO
2各自單體的熱膨脹係數、以及電極23中W和ZrO
2的含量來求出。具體來說,W單體的熱膨脹係數與電極23中W的含量(體積%)的乘積,以及ZrO
2單體的熱膨脹係數與電極23中ZrO
2的含量(體積%)的乘積的總和作為電極23的熱膨脹係數。W和ZrO
2各自單體的熱膨脹係數是將步驟S12中所使用市售的W粉末和ZrO
2粉末,通過與步驟S11相同的條件下熱壓燒成而製作的基體材料,使用此基體材料並藉由根據JIS-R1618的方法在40℃~1000℃的範圍內測量。相同方法也適用於比較例1~比較例4。CTE差如上所述,是電極23的熱膨脹係數與本體部21的熱膨脹係數的差的絕對值。
電極23中的W-ZrO
2峰值比是藉由上述的XRD來測量W和ZrO
2的主峰的強度比。W-ZrO
2峰值比是將W的主峰(110)面的強度設為I1,將ZrO
2的主峰(111)面的強度設為I2,由I1/(I1+I2)算出。此外,藉由XRD的測量中,除去第二構件並且露出位於第一構件上的電極23以進行測量。作為X射線繞射裝置,使用密管型X射線繞射裝置(Bruker AXS Co.,Ltd.製的D8 ADVANCE)。測量條件為CuKα、40kV、40mA、2θ=10~70∘,步距為0.002∘。
電極23中W的燒結粒徑,是藉由使用SEM觀察微結構來求出。具體來說,將試驗片的一個表面拋光加工成鏡面狀,並將電極23的拋光面使用SEM觀察。然後算出平均直徑,此平均直徑是預定數量(例如,數十個)的燒結粒子的各自的長軸與短軸的平均值。將此預定數量的燒結粒子的平均直徑的算術平均值定義為W的燒結粒徑。關於電極23中ZrO
2的燒結粒徑也適用相同方式。
電極23的電阻率由下述方式求出。首先,從步驟S15中所形成的複合燒結體20切出寬度、長度和厚度各自為9mm的大致長方體狀的試驗片。試驗片是以寬度5mm、長度9mm的電極23可內置於中央部的方式切出。試驗片的兩個端面上露出寬度5mm的電極23。電極23的剖面積S(cm
2)是藉由光學顯微鏡測量試驗片的端面上的電極23的寬度和長度來求出。此外,藉由卡尺測量電極23暴露在試驗片的兩個端面之間的距離,作為電極23的長度L(cm)。電阻測量用的電路是通過在電極23的兩端面塗佈導電膏並連接導線而構成。然後,在大氣中的室溫下,在0mA~150mA的範圍內向電極23施加微小電流I(mA),測量此時產生的微小電壓值V(mV),電極23的電阻R(Ω)藉由R=V/I求出。然後,電極23的電阻率ρ(Ω.cm)藉由ρ=R×S/L求出。
電極23的組成由下述方式求出。首先,去除試驗片的上半部或下半部,使電極23的上表面或下表面露出,對露出的電極23進行拋光。然後,在電極23的拋光面上,藉由上述的X射線繞射裝置在上述測量條件下鑑定結晶相。
在實施例1~實施例13和比較例1~比較例4中,本體部21的主材料為Al
2O
3,添加劑為MgO。此外,如上所述,在實施例1~實施例13中,電極23是藉由W和ZrO
2而形成。換句話說,實施例1~實施例13中,電極23中W和ZrO
2的總含量為100體積%。另一方面,在比較例1中,電極23僅由碳化鎢(WC)形成,並且不含W和ZrO
2。在比較例2中,電極23由WC和Al
2O
3形成,並且不含W和ZrO
2。在比較例3中,電極23僅由W形成,並且不含ZrO
2。在比較例4中,電極23由W和Al
2O
3形成,並且不含ZrO
2。
在實施例1中,步驟S13中被賦予電極糊的本體部21的第一構件是燒結體。並且,步驟S14中積層在第一構件上的第二構件是成形體。本體部21的MgO的含量為0.025質量%,本體部21的熱膨脹係數為8.1ppm/℃。其中,本體部21的MgO以外的其餘部分是Al
2O
3(其他的實施例與比較例也適用相同方式)。電極23中W的含量為46.2體積%,ZrO
2的含量為53.8體積%。電極23的熱膨脹係數為8.1ppm/℃。複合燒結體20的燒成溫度(即,燒成時的最高溫度)為1600℃。
在實施例1中,CTE差(即,在40℃以上且1000℃以下的範圍內,電極23和本體部21的熱膨脹係數的差的絕對值)為0.0ppm/℃。W-ZrO
2峰值比為0.94。W和ZrO
2的燒結粒徑各自為1.17μm和1.27μm,燒結粒徑差(即,ZrO
2的燒結粒徑與W的燒結粒徑的差的絕對值)為0.10μm。電極23的電阻率為2.9×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例1中,由於CTE差小到0.5ppm/℃以下,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小到3.5×10
-5Ω.cm以下。W-ZrO
2峰值比為0.90以上且未滿0.96的合適範圍內,藉此,可以合適地兼顧上述的熱膨脹係數的差的減少與抑制電阻率的增大。ZrO
2的燒結粒徑為0.7μm以上且3.0μm以下的合適範圍內,燒結粒徑差(即,W的燒結粒徑與ZrO
2的燒結粒徑的差)小到0.5μm以下。因此,電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例2中,本體部21中MgO的含量為1.0質量%,本體部21的熱膨脹係數為8.2ppm/℃。電極23中W的含量為44.2體積%,ZrO
2的含量為55.8體積%。電極23的熱膨脹係數為8.2ppm/℃。其他條件與實施例1相同。
在實施例2中,CTE差為0.0ppm/℃。W-ZrO
2峰值比為0.93。W和ZrO
2的燒結粒徑各自為1.15μm和1.32μm,燒結粒徑差為0.17μm。電極23的電阻率為3.0×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例2中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例3中,本體部21中MgO的含量為5.0質量%,本體部21的熱膨脹係數為8.3ppm/℃。電極23中W的含量為42.3體積%,ZrO
2的含量為57.7體積%。電極23的熱膨脹係數為8.3ppm/℃。其他條件與實施例1相同。
在實施例3中,CTE差為0.0ppm/℃。W-ZrO
2峰值比為0.91。W和ZrO
2的燒結粒徑各自為1.14μm和1.36μm,燒結粒徑差為0.22μm。電極23的電阻率為3.2×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例3中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
注目於實施例1~實施例3,即使本體部21的熱膨脹係數在上述範圍(即,8.1ppm/℃~8.3ppm/℃)內改變,CTE差仍可為0.0ppm/℃,並可防止本體部21產生裂紋、電極23的剝離。並且,可抑制電極23的電阻率的增大。
在實施例4中,電極23中W的含量為55.8體積%,ZrO
2的含量為44.2體積%。電極23的熱膨脹係數為7.6ppm/℃。其他條件與實施例1相同。
在實施例4中,CTE差為0.5ppm/℃。W-ZrO
2峰值比為0.96。W和ZrO
2的燒結粒徑各自為1.20μm和1.11μm,燒結粒徑差為0.09μm。電極23的電阻率為2.0×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例4中,由於CTE差小(即,0.5ppm/℃以下),沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例5中,電極23中W的含量為51.9體積%,ZrO
2的含量為48.1體積%。電極23的熱膨脹係數為7.8ppm/℃。其他條件與實施例1相同。
在實施例5中,CTE差為0.3ppm/℃。W-ZrO
2峰值比為0.95。W和ZrO
2的燒結粒徑各自為1.19μm和1.14μm,燒結粒徑差為0.05μm。電極23的電阻率為2.5×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例5中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例6中,電極23中W的含量為48.1體積%,ZrO
2的含量為51.9體積%。電極23的熱膨脹係數為8.0ppm/℃。其他條件與實施例1相同。
在實施例6中,CTE差為0.1ppm/℃。W-ZrO
2峰值比為0.95。W和ZrO
2的燒結粒徑各自為1.18μm和1.22μm,燒結粒徑差為0.04μm。電極23的電阻率為2.8×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例6中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例7中,電極23中W的含量為44.2體積%,ZrO
2的含量為55.8體積%。電極23的熱膨脹係數為8.2ppm/℃。其他條件與實施例1相同。
在實施例7中,CTE差為0.1ppm/℃。W-ZrO
2峰值比為0.93。W和ZrO
2的燒結粒徑各自為1.16μm和1.30μm,燒結粒徑差為0.14μm。電極23的電阻率為3.1×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例7中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例8中,電極23中W的含量為40.4體積%,ZrO
2的含量為59.6體積%。電極23的熱膨脹係數為8.4ppm/℃。其他條件與實施例1相同。
在實施例8中,CTE差為0.3ppm/℃。W-ZrO
2峰值比為0.91。W和ZrO
2的燒結粒徑各自為1.14μm和1.35μm,燒結粒徑差為0.21μm。電極23的電阻率為3.3×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例8中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例9中,電極23中W的含量為36.5體積%,ZrO
2的含量為63.5體積%。電極23的熱膨脹係數為8.6ppm/℃。其他條件與實施例1相同。
在實施例9中,CTE差為0.5ppm/℃。W-ZrO
2峰值比為0.90。W和ZrO
2的燒結粒徑各自為1.13μm和1.38μm,燒結粒徑差為0.25μm。電極23的電阻率為3.5×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例9中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
注目於實施例1、實施例4~實施例9,即使電極23中W和ZrO
2的含量改變,CTE差仍在上述範圍(即,0.0ppm/℃~0.5ppm/℃)內改變,並可防止本體部21產生裂紋、電極23的剝離。並且,可抑制電極23的電阻率的增大。
在實施例10中,複合燒結體20的燒成溫度為1550℃。其他條件與實施例1相同。
在實施例10中,電極23的熱膨脹係數為8.0ppm/℃,CTE差為0.1ppm/℃。W-ZrO
2峰值比為0.94。W和ZrO
2的燒結粒徑各自為0.94μm和0.82μm,燒結粒徑差為0.12μm。電極23的電阻率為3.0×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例10中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例11中,複合燒結體20的燒成溫度為1650℃。其他條件與實施例1相同。
在實施例11中,電極23的熱膨脹係數為8.2ppm/℃,CTE差為0.1ppm/℃。W-ZrO
2峰值比為0.93。W和ZrO
2的燒結粒徑各自為1.81μm和1.72μm,燒結粒徑差為0.09μm。電極23的電阻率為3.1×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例11中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
注目實施例1、實施例10~實施例11,即使複合燒結體20的燒成溫度在上述範圍(即,1550℃~1650℃)內改變,CTE差仍小到0.0ppm/℃~0.1ppm/℃,並可防止本體部21產生裂紋、電極23的剝離。並且,可抑制電極23的電阻率的增大。
在實施例12中,在步驟S11中準備的第一構件、以及在步驟S14中積層在第一構件上的第二構件是煅燒體。其他條件與實施例1相同。
在實施例12中,CTE差為0.0ppm/℃。W-ZrO
2峰值比為0.93。W和ZrO
2的燒結粒徑各自為2.22μm和2.55μm,燒結粒徑差為0.33μm。電極23的電阻率為2.8×10
-5Ω.cm。電極23的組成是W和ZrO
2。
在實施例12中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO
2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO
2的大致均勻的分散。
在實施例13中,在步驟S14中積層在第一構件上的第二構件是燒結體。其他條件與實施例1相同。
在實施例13中,CTE差為0.0ppm/℃。W-ZrO
2峰值比為0.94。W和ZrO
2的燒結粒徑各自為1.15μm和1.25μm,燒結粒徑差為0.10μm。電極23的電阻率為2.9×10-5Ω.cm。電極23的組成是W和ZrO2。
在實施例13中,由於CTE差小,沒有產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的電阻率小。進一步地,由於ZrO2的燒結粒徑在合適的範圍內,並且燒結粒徑差較小,在電極23中實現了W和ZrO2的大致均勻的分散。
注目於實施例1、實施例12~實施例13,即使在步驟S15中燒結前的第一構件和第二構件的狀態(即,成形體、煅燒體或燒結體)改變時,CTE差仍為0.0ppm/℃,並可防止本體部21產生裂紋、電極23的剝離。並且,可抑制電極23的電阻率的增大。
在比較例1中,如上所述,電極23僅由WC形成,並且不含W和ZrO2。電極23的熱膨脹係數為5.3ppm/℃。其他條件與實施例1相同。在比較例1中,由於CTE差大到2.8ppm/℃,會產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的組成為WC和W2C。此W2C是藉由高溫燒成使WC的一部分氧化而生成,電極23中WC和W2C的含量變動而使電極23的特性(例如,電阻率、熱膨脹係數等)具有變得不穩定的可能性。
在比較例2中,如上所述,電極23由WC和Al2O3形成,並且不含W和ZrO2。電極23的熱膨脹係數為6.1ppm/℃。其他條件與實施例1相同。在比較例2中,由於CTE差大到2.0ppm/℃,會產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的組成為WC、W2C和Al2O3。因此,與比較例1相同,使電極23的特性具有變得不穩定的可能性。
在比較例3中,如上所述,電極23僅由W形成,並且不含ZrO2。電極23的熱膨脹係數為5.3ppm/℃。其他條件與實施例1相同。在比較例3中,由於CTE差大到2.5ppm/℃,會產生由本體部21和電極23的熱膨脹係數的差所引起的
本體部21的裂紋、電極23的剝離。並且,電極23的組成為W。
在比較例4中,如上所述,電極23由W和Al2O3形成,並且不含ZrO2。電極23的熱膨脹係數為6.1ppm/℃。其他條件與實施例1相同。在比較例4中,由於CTE差大到2.0ppm/℃,會產生由本體部21和電極23的熱膨脹係數的差所引起的本體部21的裂紋、電極23的剝離。並且,電極23的組成為W和Al2O3。
如同以上的說明,複合燒結體20具備:基材(上述例中的本體部21),以陶瓷作為主材料;以及電極23,配置於此基材的內部或表面。電極23包含W和ZrO2。藉此,如實施例1~實施例13所示,可以減少電極23和基材的熱膨脹係數的差。其結果為,可以抑制由電極23和基材的熱膨脹係數的差所引起的基材的裂紋、電極23的剝離。並且,在複合燒結體20中,可抑制電極23的電阻率的增大。其結果為,可以精度良好地控制由電極23產生的熱量。進一步地,由於W和ZrO2不是Ni、Co等磁性材料,即使將複合燒結體20用作靜電吸盤時,仍可抑制藉由庫侖力對基板9的吸附的阻礙。
如上所述,電極23和基材的熱膨脹係數的差的絕對值,在40℃以上且1000℃以下的範圍內,較佳為0.5ppm/℃以下。藉此,可以進一步地抑制由電極23和基材的熱膨脹係數的差所引起的基材的裂紋、電極23的剝離。
如上所述,電極23在室溫下的電阻率較佳為3.5×10-5Ω.cm以下。藉此,可以更加精度良好地控制由電極23產生的熱量。
如上所述,在電極23中,藉由X射線繞射法所獲得的W和ZrO2的主峰的強度比(即,W-ZrO2峰值比)較佳為0.90以上且未滿0.96。如此,藉由將電極23中的W和ZrO2的組成比設為合適的範圍,在合適地抑制電極23的電阻率的增大的同時,可以合適地減少電極23和基材的熱膨脹係數的差。
如上所述,電極23中W和ZrO2的總含量較佳為100體積%。藉此,可防止由電極23的材料的種類增加而使製造成本增大。
如上所述,ZrO2的燒結粒徑較佳為0.7μm以上且3.0μm以下。藉此,可以提高電極23中ZrO2的分散的均勻性。其結果為,可以實現電極23全體中,抑制電阻率的增大、以及減少與基材的熱膨脹係數差。
如上所述,ZrO2的燒結粒徑與W的燒結粒徑的差的絕對值(即,燒結粒徑差)較佳為0.5μm以下。藉此,可以提高電極23中W和ZrO2的分散的均勻性。其結果為,可以實現電極23全體中,抑制電阻率的增大、以及減少與基材的熱膨脹係數差。
如上所述,基材的主材料為Al2O3,此基材中Al2O3的含量較佳為95質量%以上。藉此,當製造複合燒結體20時,複合燒結體20成為可以高溫燒成。因此,可以抑制燒成時W的碳化和氧化。其結果為,可以穩定電極23的特性。
如上所述,在複合燒結體20中,在抑制電極23的電阻率的增大的同時,減少電極23和基材的熱膨脹係數的差,可以抑制基材產生裂紋、電極23的剝離。因此,複合燒結體20適用於半導體製造裝置中所使用的半導體製造裝置構件。複合燒結體20特別適用於高功率蝕刻裝置等的高輸出半導體製造裝置中所使用的半導體製造裝置構件。作為使用複合燒結體20作成的半導體製造裝置構件的合適的一例,可列舉上述的承載基座1。在承載基座1中,如上所述,本體部21為圓盤狀,並且本體部21的主表面上載置有基板9。
上述的複合燒結體20的製造方法具備:準備以陶瓷作為主材料的成形體、煅燒體或燒結體的第一構件和第二構件的步驟(步驟S11),在此第一構件上配置包含W和ZrO2的電極23或電極23的前驅物後,積層第二構件以形成積層體的步驟(步驟S13、S14)、以及將此積層體熱壓燒成的步驟(步驟S15)。藉此,與上述同樣地,可抑制由電極23和基材的熱膨脹係數的差所引起的基材的裂紋、電極23的剝離。
如上所述,步驟S15終了後的電極23與第一構件和第二構件的熱膨脹係數的差的絕對值,在40℃以上且1000℃以下的範圍內,較佳為0.5ppm/℃以下。藉此,可進一步地抑制由電極23和基材的熱膨脹係數的差所引起的基材的裂紋、電極23的剝離。
如上所述,步驟S15中的燒成溫度較佳為1550℃以上且1650℃以下。藉此,可抑制燒成時W的碳化和氧化。其結果為,可以穩定電極23的特性。
上述的複合燒結體20、半導體製造裝置構件、以及複合燒結體20的製造方法可以進行各種變更。
例如,複合燒結體20的CTE差可以大於0.5ppm/℃。
電極23在室溫下的電阻率可以高於3.5×10
-5Ω.cm。
電極23中,W-ZrO
2峰值比可以未滿0.90,也可以0.96以上。
電極23的固體物質中的W和ZrO
2的總含量可以未滿100體積%。
電極23中,ZrO
2的燒結粒徑可以未滿0.7μm,也可以大於3.0μm。
電極23中,ZrO
2的燒結粒徑與W的燒結粒徑的差的絕對值(即,燒結粒徑差)可以大於0.5μm。
本體部21中Al
2O
3的含量可以未滿95質量%。並且,本體部21的主材料可以是Al
2O
3以外的陶瓷。
複合燒結體20的製造方法中,上述的步驟S15中的燒成溫度可以未滿1550℃,也可以溫度高於1650℃。
複合燒結體20可以藉由與上述製造方法不同的方法來製造。例如,可以省略步驟S12,且在步驟S13中,可以將電極23的原料粉末(即,電極23的前驅物)賦予在第一構件上。
複合燒結體20可以用於製作除承載基座1以外的半導體製造裝置中所設置其他的半導體製造裝置構件(例如,環、噴頭等)。此外,可以藉由複合燒結體20製作除半導體製造裝置以外的裝置中所使用的構件。例如,複合燒結體20可以用於製作支撐除半導體基板以外的基板的承載基座,也可以用於製作加熱對象物的陶瓷加熱器。
上述實施形態及其各種變形例中的構成只要不相互衝突,即可適當地組合。
儘管已經詳細描述並說明了本發明,但是以上說明為例示性的而不是限制性的。因此,在不背離本發明範圍的情況下,可以進行多種變形、態樣的修改。
[產業上的可利用性]
本發明是有關於半導體製造裝置的領域,例如,可利用於製造保持和加熱半導體基板的承載基座。
1:承載基座
9:基板
20:複合燒結體
21:本體部
22:底座部
23:電極
S11,S12,S13,S14,S15:步驟
圖1是關於一實施形態的承載基座的剖面圖。
圖2是複合燒結體的剖面的SEM圖像。
圖3是複合燒結體的製造的流程示意圖。
1:承載基座
9:基板
20:複合燒結體
21:本體部
22:底座部
23:電極
Claims (12)
- 一種複合燒結體,具備:基材,以陶瓷作為主材料;以及電極,配置在所述基材的內部或表面;所述電極包含鎢和氧化鋯。
- 如請求項1所述的複合燒結體,其中,在40℃以上且1000℃以下的範圍內,所述電極和所述基材的熱膨脹係數的差的絕對值為0.5ppm/℃以下。
- 如請求項1或請求項2所述的複合燒結體,其中所述電極在室溫下的電阻率為3.5×10-5Ω.cm以下。
- 如請求項1或請求項2所述的複合燒結體,其中在所述電極中,藉由X射線繞射法所獲得的所述鎢和所述氧化鋯的主峰的強度比為0.90以上且未滿0.96。
- 如請求項1或請求項2所述的複合燒結體,其中所述電極中的所述鎢和所述氧化鋯的總含量為100體積%。
- 如請求項1或請求項2所述的複合燒結體,其中所述氧化鋯的燒結粒徑為0.7μm以上且3.0μm以下。
- 如請求項1或請求項2所述的複合燒結體,其中所述氧化鋯的燒結粒徑與所述鎢的燒結粒徑的差的絕對值為0.5μm以下。
- 如請求項1或請求項2所述的複合燒結體,其中所述基材的主材料為氧化鋁,所述基材中的所述氧化鋁的含量為95質量%以上。
- 一種半導體製造裝置構件,其是在半導體製造裝置中使用之半導體製造裝置構件,其中,使用如請求項1至請求項8中任一項所述的複合燒結體來製作,所述基材為圓盤狀,所述基材的主表面上載置有半導體基板。
- 一種複合燒結體的製造方法,具備下列步驟:a)準備第一構件與第二構件,其是以陶瓷作為主材料的成形體、煅燒體或燒結體;b)將含有鎢和氧化鋯的電極或所述電極的前驅物配置在所述第一構件上後,積層所述第二構件以形成積層體;以及c)將所述積層體熱壓燒成。
- 如請求項10所述的複合燒結體的製造方法,其中在所述c)步驟終了後,在40℃以上且1000℃以下的範圍內,所述電極與所述第一構件和所述第二構件的熱膨脹係數的差的絕對值為0.5ppm/℃以下。
- 如請求項10或請求項11所述的複合燒結體的製造方法,其中所述步驟c)中的燒成溫度為1550℃以上且1650℃以下。
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US6929874B2 (en) * | 2000-02-24 | 2005-08-16 | Ibiden Co., Ltd. | Aluminum nitride sintered body, ceramic substrate, ceramic heater and electrostatic chuck |
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KR20220036334A (ko) | 2022-03-22 |
US11926570B2 (en) | 2024-03-12 |
CN114180943B (zh) | 2023-06-27 |
JP7465771B2 (ja) | 2024-04-11 |
TW202212135A (zh) | 2022-04-01 |
JP2022048679A (ja) | 2022-03-28 |
US20220081365A1 (en) | 2022-03-17 |
CN114180943A (zh) | 2022-03-15 |
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