JP2022048679A - 複合焼結体、半導体製造装置部材および複合焼結体の製造方法 - Google Patents
複合焼結体、半導体製造装置部材および複合焼結体の製造方法 Download PDFInfo
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- JP2022048679A JP2022048679A JP2020154641A JP2020154641A JP2022048679A JP 2022048679 A JP2022048679 A JP 2022048679A JP 2020154641 A JP2020154641 A JP 2020154641A JP 2020154641 A JP2020154641 A JP 2020154641A JP 2022048679 A JP2022048679 A JP 2022048679A
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Abstract
Description
20 複合焼結体
21 本体部
23 電極
9 基板
S11~S15 ステップ
Claims (12)
- 複合焼結体であって、
セラミックを主材料とする基材と、
前記基材の内部または表面に配置される電極と、
を備え、
前記電極は、
タングステンと、
酸化ジルコニウムと、
を含むことを特徴とする複合焼結体。 - 請求項1に記載の複合焼結体であって、
前記電極と前記基材との熱膨張係数の差の絶対値は、40℃以上かつ1000℃以下の範囲において、0.5ppm/℃以下であることを特徴とする複合焼結体。 - 請求項1または2に記載の複合焼結体であって、
前記電極の室温における抵抗率は、3.5×10-5Ω・cm以下であることを特徴とする複合焼結体。 - 請求項1ないし3のいずれか1つに記載の複合焼結体であって、
前記電極において、X線回折法により得られる前記タングステンと前記酸化ジルコニウムとのメインピークの強度比は、0.90以上かつ0.96未満であることを特徴とする複合焼結体。 - 請求項1ないし4のいずれか1つに記載の複合焼結体であって、
前記電極における前記タングステンおよび前記酸化ジルコニウムの合計含有率は、100体積%であることを特徴とする複合焼結体。 - 請求項1ないし5のいずれか1つに記載の複合焼結体であって、
前記酸化ジルコニウムの焼結粒径は、0.7μm以上かつ3.0μm以下であることを特徴とする複合焼結体。 - 請求項1ないし6のいずれか1つに記載の複合焼結体であって、
前記酸化ジルコニウムの焼結粒径と前記タングステンの焼結粒径との差の絶対値は、0.5μm以下であることを特徴とする複合焼結体。 - 請求項1ないし7のいずれか1つに記載の複合焼結体であって、
前記基材の主材料は酸化アルミニウムであり、
前記基材における前記酸化アルミニウムの含有率は95質量%以上であることを特徴とする複合焼結体。 - 半導体製造装置において使用される半導体製造装置部材であって、
請求項1ないし8のいずれか1つに記載の複合焼結体を用いて作製され、
前記基材が円板状であり、前記基材の主面に半導体基板が載置されることを特徴とする半導体製造装置部材。 - 複合焼結体の製造方法であって、
a)セラミックを主材料とする成形体、仮焼体または焼結体である第1部材および第2部材を準備する工程と、
b)前記第1部材上に、タングステンおよび酸化ジルコニウムを含む電極または前記電極の前駆体を配置した後、前記第2部材を積層して積層体を形成する工程と、
c)前記積層体をホットプレス焼成する工程と、
を備えることを特徴とする複合焼結体の製造方法。 - 請求項10に記載の複合焼結体の製造方法であって、
前記c)工程の終了後における前記電極と前記第1部材および前記第2部材との熱膨張係数の差の絶対値は、40℃以上かつ1000℃以下の範囲において、0.5ppm/℃以下であることを特徴とする複合焼結体の製造方法。 - 請求項10または11に記載の複合焼結体の製造方法であって、
前記c)工程における焼成温度は、1550℃以上かつ1650℃以下であることを特徴とする複合焼結体の製造方法。
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JP2020154641A JP7465771B2 (ja) | 2020-09-15 | 2020-09-15 | 複合焼結体、半導体製造装置部材および複合焼結体の製造方法 |
US17/445,504 US11926570B2 (en) | 2020-09-15 | 2021-08-20 | Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body |
TW110131236A TWI773497B (zh) | 2020-09-15 | 2021-08-24 | 複合燒結體、半導體製造裝置構件及複合燒結體的製造方法 |
KR1020210112591A KR20220036334A (ko) | 2020-09-15 | 2021-08-25 | 복합 소결체, 반도체 제조 장치 부재 및 복합 소결체의 제조 방법 |
CN202111081223.1A CN114180943B (zh) | 2020-09-15 | 2021-09-15 | 复合烧结体、半导体制造装置构件及复合烧结体的制造方法 |
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JP4476701B2 (ja) * | 2004-06-02 | 2010-06-09 | 日本碍子株式会社 | 電極内蔵焼結体の製造方法 |
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US20220081365A1 (en) | 2022-03-17 |
CN114180943A (zh) | 2022-03-15 |
TWI773497B (zh) | 2022-08-01 |
JP7465771B2 (ja) | 2024-04-11 |
CN114180943B (zh) | 2023-06-27 |
KR20220036334A (ko) | 2022-03-22 |
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