TWI773341B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

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Publication number
TWI773341B
TWI773341B TW110119011A TW110119011A TWI773341B TW I773341 B TWI773341 B TW I773341B TW 110119011 A TW110119011 A TW 110119011A TW 110119011 A TW110119011 A TW 110119011A TW I773341 B TWI773341 B TW I773341B
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TW
Taiwan
Prior art keywords
sealing body
protective film
semiconductor
manufacturing
semiconductor device
Prior art date
Application number
TW110119011A
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English (en)
Chinese (zh)
Other versions
TW202137340A (zh
Inventor
篠田智則
根本拓
中西勇人
Original Assignee
日商琳得科股份有限公司
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Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW202137340A publication Critical patent/TW202137340A/zh
Application granted granted Critical
Publication of TWI773341B publication Critical patent/TWI773341B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW110119011A 2016-08-31 2017-08-10 半導體裝置的製造方法 TWI773341B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016169152 2016-08-31
JP2016-169152 2016-08-31

Publications (2)

Publication Number Publication Date
TW202137340A TW202137340A (zh) 2021-10-01
TWI773341B true TWI773341B (zh) 2022-08-01

Family

ID=61301917

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106127072A TWI732921B (zh) 2016-08-31 2017-08-10 半導體裝置的製造方法
TW110119011A TWI773341B (zh) 2016-08-31 2017-08-10 半導體裝置的製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW106127072A TWI732921B (zh) 2016-08-31 2017-08-10 半導體裝置的製造方法

Country Status (5)

Country Link
JP (2) JP7096766B2 (fr)
KR (2) KR102385965B1 (fr)
CN (1) CN109463007B (fr)
TW (2) TWI732921B (fr)
WO (1) WO2018043008A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7238301B2 (ja) * 2018-09-05 2023-03-14 株式会社レゾナック 材料の選定方法及びパネルの製造方法
JP7395898B2 (ja) 2019-09-18 2023-12-12 大日本印刷株式会社 半導体多面付け基板用部材、半導体多面付け基板、および半導体部材
WO2022185489A1 (fr) * 2021-03-04 2022-09-09 昭和電工マテリアルズ株式会社 Procédé de fabrication de dispositif à semi-conducteur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332643A (ja) * 2000-05-19 2001-11-30 Iep Technologies:Kk 半導体装置およびその製造方法
JP2006222164A (ja) * 2005-02-08 2006-08-24 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US20140191406A1 (en) * 2011-10-19 2014-07-10 Panasonic Corporation Manufacturing method for semiconductor package, semiconductor package, and semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3456462B2 (ja) * 2000-02-28 2003-10-14 日本電気株式会社 半導体装置及びその製造方法
JP4719042B2 (ja) * 2006-03-16 2011-07-06 株式会社東芝 半導体装置の製造方法
JP2009032929A (ja) * 2007-07-27 2009-02-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5456440B2 (ja) * 2009-01-30 2014-03-26 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
JP5718005B2 (ja) 2010-09-14 2015-05-13 日東電工株式会社 半導体装置製造用耐熱性粘着テープ及びそのテープを用いた半導体装置の製造方法。
JP2013074184A (ja) * 2011-09-28 2013-04-22 Nitto Denko Corp 半導体装置の製造方法
JP2014197568A (ja) * 2011-10-19 2014-10-16 パナソニック株式会社 半導体パッケージの製造方法、半導体パッケージ、及び半導体装置
JP5892780B2 (ja) * 2011-12-19 2016-03-23 日東電工株式会社 半導体装置の製造方法
US9385102B2 (en) * 2012-09-28 2016-07-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming supporting layer over semiconductor die in thin fan-out wafer level chip scale package
CN103887251B (zh) * 2014-04-02 2016-08-24 华进半导体封装先导技术研发中心有限公司 扇出型晶圆级封装结构及制造工艺
CN104103528A (zh) * 2014-07-22 2014-10-15 华进半导体封装先导技术研发中心有限公司 一种扇出型方片级半导体芯片封装工艺
JP6417142B2 (ja) * 2014-07-23 2018-10-31 株式会社ジェイデバイス 半導体装置及びその製造方法
CN204497228U (zh) * 2015-03-16 2015-07-22 苏州晶方半导体科技股份有限公司 芯片封装结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332643A (ja) * 2000-05-19 2001-11-30 Iep Technologies:Kk 半導体装置およびその製造方法
JP2006222164A (ja) * 2005-02-08 2006-08-24 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US20140191406A1 (en) * 2011-10-19 2014-07-10 Panasonic Corporation Manufacturing method for semiconductor package, semiconductor package, and semiconductor device

Also Published As

Publication number Publication date
KR102487681B1 (ko) 2023-01-11
TW201826405A (zh) 2018-07-16
KR20220045255A (ko) 2022-04-12
KR102385965B1 (ko) 2022-04-12
JP2022123045A (ja) 2022-08-23
CN109463007A (zh) 2019-03-12
JPWO2018043008A1 (ja) 2019-06-24
TW202137340A (zh) 2021-10-01
JP7317187B2 (ja) 2023-07-28
JP7096766B2 (ja) 2022-07-06
WO2018043008A1 (fr) 2018-03-08
KR20190045091A (ko) 2019-05-02
CN109463007B (zh) 2022-11-08
TWI732921B (zh) 2021-07-11

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