TWI772241B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

Info

Publication number
TWI772241B
TWI772241B TW111100135A TW111100135A TWI772241B TW I772241 B TWI772241 B TW I772241B TW 111100135 A TW111100135 A TW 111100135A TW 111100135 A TW111100135 A TW 111100135A TW I772241 B TWI772241 B TW I772241B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
electrode
film
oxide
oxygen
Prior art date
Application number
TW111100135A
Other languages
English (en)
Chinese (zh)
Other versions
TW202218167A (zh
Inventor
山崎舜平
高橋正弘
廣橋拓也
栃林克明
中澤安孝
橫山雅俊
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202218167A publication Critical patent/TW202218167A/zh
Application granted granted Critical
Publication of TWI772241B publication Critical patent/TWI772241B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
TW111100135A 2010-07-02 2011-07-01 半導體裝置 TWI772241B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010152179 2010-07-02
JP2010-152179 2010-07-02
JP2011100534 2011-04-28
JP2011-100534 2011-04-28

Publications (2)

Publication Number Publication Date
TW202218167A TW202218167A (zh) 2022-05-01
TWI772241B true TWI772241B (zh) 2022-07-21

Family

ID=45399022

Family Applications (5)

Application Number Title Priority Date Filing Date
TW111100135A TWI772241B (zh) 2010-07-02 2011-07-01 半導體裝置
TW109101096A TWI713226B (zh) 2010-07-02 2011-07-01 半導體裝置
TW100123345A TWI600156B (zh) 2010-07-02 2011-07-01 半導體裝置
TW109136305A TWI763085B (zh) 2010-07-02 2011-07-01 半導體裝置
TW105132071A TWI684279B (zh) 2010-07-02 2011-07-01 半導體裝置

Family Applications After (4)

Application Number Title Priority Date Filing Date
TW109101096A TWI713226B (zh) 2010-07-02 2011-07-01 半導體裝置
TW100123345A TWI600156B (zh) 2010-07-02 2011-07-01 半導體裝置
TW109136305A TWI763085B (zh) 2010-07-02 2011-07-01 半導體裝置
TW105132071A TWI684279B (zh) 2010-07-02 2011-07-01 半導體裝置

Country Status (4)

Country Link
US (2) US20120001179A1 (enExample)
JP (7) JP5856395B2 (enExample)
KR (2) KR20120003390A (enExample)
TW (5) TWI772241B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6059968B2 (ja) * 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
KR101308809B1 (ko) * 2012-01-20 2013-09-13 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치
KR20130085859A (ko) * 2012-01-20 2013-07-30 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
KR102345837B1 (ko) * 2013-04-15 2021-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
KR102304824B1 (ko) * 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN106409686A (zh) * 2015-08-03 2017-02-15 中华映管股份有限公司 制造氧化物半导体薄膜电晶体的方法
DE102015220034A1 (de) 2015-10-15 2017-04-20 Benecke-Kaliko Ag Folienlaminat und Innenverkleidungsteil für Kraftfahrzeuge
TWI900098B (zh) 2015-10-30 2025-10-01 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
JP7190443B2 (ja) * 2017-11-24 2022-12-15 株式会社半導体エネルギー研究所 半導体材料

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050029600A1 (en) * 2002-06-07 2005-02-10 Renesas Technology Corp. Semiconductor device and method for manufacturing thereof
US20080246100A1 (en) * 2003-07-30 2008-10-09 Infineon Technologies Ag: High-k dielectric film, method of forming the same and related semiconductor device
TW200849608A (en) * 2007-03-23 2008-12-16 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW200908394A (en) * 2007-06-13 2009-02-16 Rohm Co Ltd ZnO-based thin film and ZnO-based semiconductor element
US20090065848A1 (en) * 2007-09-10 2009-03-12 Renesas Technology Corp. Nonvolatile semiconductor storage device and manufacturing method thereof
TW201003894A (en) * 2008-05-23 2010-01-16 Semiconductor Energy Lab Semiconductor device
TW201013931A (en) * 2008-09-12 2010-04-01 Taiwan Semiconductor Mfg Semiconductor device and method for fabricating thereof
US20100140682A1 (en) * 2008-12-10 2010-06-10 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacturing the same
TW201023340A (en) * 2008-09-25 2010-06-16 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858898B1 (en) * 1999-03-23 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP2001358342A (ja) * 2000-06-14 2001-12-26 Sharp Corp アクティブマトリクス基板
TWI313059B (enExample) * 2000-12-08 2009-08-01 Sony Corporatio
JP2003264192A (ja) * 2002-03-07 2003-09-19 Sanyo Electric Co Ltd 配線構造、その製造方法、および光学装置
JP2004193446A (ja) * 2002-12-13 2004-07-08 Sanyo Electric Co Ltd 半導体装置の製造方法および薄膜トランジスタの製造方法
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP5126729B2 (ja) * 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7242055B2 (en) * 2004-11-15 2007-07-10 International Business Machines Corporation Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
US20060197089A1 (en) * 2005-03-03 2006-09-07 Chunghwa Picture Tubes., Ltd. Semiconductor device and its manufacturing method
JP2006351844A (ja) * 2005-06-16 2006-12-28 Mitsubishi Electric Corp 電気光学表示装置およびその製造方法
JP5232360B2 (ja) * 2006-01-05 2013-07-10 株式会社ジャパンディスプレイイースト 半導体装置及びその製造方法
JP4932415B2 (ja) * 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
JP2008140984A (ja) * 2006-12-01 2008-06-19 Sharp Corp 半導体素子、半導体素子の製造方法、及び表示装置
KR101312259B1 (ko) * 2007-02-09 2013-09-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP4727684B2 (ja) * 2007-03-27 2011-07-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
KR101334182B1 (ko) * 2007-05-28 2013-11-28 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터의 제조방법
JP5241143B2 (ja) * 2007-05-30 2013-07-17 キヤノン株式会社 電界効果型トランジスタ
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR20090041506A (ko) * 2007-10-24 2009-04-29 엘지전자 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
US20100295042A1 (en) * 2008-01-23 2010-11-25 Idemitsu Kosan Co., Ltd. Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
JP5264197B2 (ja) * 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
JP5182993B2 (ja) * 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
WO2009128522A1 (en) * 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8314765B2 (en) * 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
US7812346B2 (en) * 2008-07-16 2010-10-12 Cbrite, Inc. Metal oxide TFT with improved carrier mobility
TWI834207B (zh) * 2008-07-31 2024-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9000441B2 (en) * 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP2010073880A (ja) * 2008-09-18 2010-04-02 Fujifilm Corp 薄膜電界効果型トランジスタ及びその製造方法
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5430113B2 (ja) * 2008-10-08 2014-02-26 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5595003B2 (ja) * 2008-10-23 2014-09-24 株式会社半導体エネルギー研究所 表示装置
WO2010047217A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010050419A1 (en) * 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
KR20170021903A (ko) * 2008-11-07 2017-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
KR102342672B1 (ko) * 2009-03-12 2021-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011093506A1 (ja) * 2010-02-01 2011-08-04 日本電気株式会社 アモルファス酸化物薄膜、これを用いた薄膜トランジスタ及びその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050029600A1 (en) * 2002-06-07 2005-02-10 Renesas Technology Corp. Semiconductor device and method for manufacturing thereof
US20080246100A1 (en) * 2003-07-30 2008-10-09 Infineon Technologies Ag: High-k dielectric film, method of forming the same and related semiconductor device
TW200849608A (en) * 2007-03-23 2008-12-16 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW200908394A (en) * 2007-06-13 2009-02-16 Rohm Co Ltd ZnO-based thin film and ZnO-based semiconductor element
US20090065848A1 (en) * 2007-09-10 2009-03-12 Renesas Technology Corp. Nonvolatile semiconductor storage device and manufacturing method thereof
US20100129998A1 (en) * 2007-09-10 2010-05-27 Renesas Technology Corp. Nonvolatile semiconductor storage device and manufacturing method thereof
TW201003894A (en) * 2008-05-23 2010-01-16 Semiconductor Energy Lab Semiconductor device
TW201013931A (en) * 2008-09-12 2010-04-01 Taiwan Semiconductor Mfg Semiconductor device and method for fabricating thereof
TW201023340A (en) * 2008-09-25 2010-06-16 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US20100140682A1 (en) * 2008-12-10 2010-06-10 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2022044686A (ja) 2022-03-17
JP6657440B2 (ja) 2020-03-04
JP6818918B2 (ja) 2021-01-27
KR20120003390A (ko) 2012-01-10
TW202021135A (zh) 2020-06-01
TWI763085B (zh) 2022-05-01
JP2016086179A (ja) 2016-05-19
US20220123150A1 (en) 2022-04-21
TWI600156B (zh) 2017-09-21
JP2019071485A (ja) 2019-05-09
JP7013559B2 (ja) 2022-01-31
TWI684279B (zh) 2020-02-01
US20120001179A1 (en) 2012-01-05
TWI713226B (zh) 2020-12-11
TW202218167A (zh) 2022-05-01
JP2020107889A (ja) 2020-07-09
JP2012238826A (ja) 2012-12-06
TW202107716A (zh) 2021-02-16
TW201216471A (en) 2012-04-16
JP2021061433A (ja) 2021-04-15
JP6479921B2 (ja) 2019-03-06
TW201703263A (zh) 2017-01-16
JP2018029196A (ja) 2018-02-22
JP5856395B2 (ja) 2016-02-09
KR20190003856A (ko) 2019-01-09

Similar Documents

Publication Publication Date Title
JP6847296B2 (ja) 半導体装置
CN107452630B (zh) 半导体装置
KR102142450B1 (ko) 반도체 장치 및 반도체 장치의 제작방법
CN102939659B (zh) 半导体器件及半导体器件的制造方法
CN102906881B (zh) 半导体装置
JP2022048215A (ja) 液晶表示装置
TWI763085B (zh) 半導體裝置
TWI595568B (zh) 半導體裝置之製造方法
CN105390402B (zh) 半导体装置及半导体装置的制造方法
CN102906882B (zh) 半导体装置及其制造方法
TWI627755B (zh) 半導體裝置
JP2020107896A (ja) 発光表示パネル
CN103843146A (zh) 半导体器件
TWI605595B (zh) 半導體裝置及其製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees