TWI757299B - 用於沉積材料在連續基板上的方法及設備 - Google Patents
用於沉積材料在連續基板上的方法及設備 Download PDFInfo
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- TWI757299B TWI757299B TW106118248A TW106118248A TWI757299B TW I757299 B TWI757299 B TW I757299B TW 106118248 A TW106118248 A TW 106118248A TW 106118248 A TW106118248 A TW 106118248A TW I757299 B TWI757299 B TW I757299B
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- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000000151 deposition Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 title abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 31
- 239000000835 fiber Substances 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 7
- 238000001764 infiltration Methods 0.000 claims description 5
- 230000008595 infiltration Effects 0.000 claims description 5
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011153 ceramic matrix composite Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 210000002159 anterior chamber Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012840 feeding operation Methods 0.000 description 1
- 238000001171 gas-phase infiltration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662344962P | 2016-06-02 | 2016-06-02 | |
| US62/344,962 | 2016-06-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201807240A TW201807240A (zh) | 2018-03-01 |
| TWI757299B true TWI757299B (zh) | 2022-03-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106118248A TWI757299B (zh) | 2016-06-02 | 2017-06-02 | 用於沉積材料在連續基板上的方法及設備 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11578004B2 (enExample) |
| EP (1) | EP3464218A4 (enExample) |
| JP (1) | JP7146645B2 (enExample) |
| CN (1) | CN109195931B (enExample) |
| SG (2) | SG11201810649PA (enExample) |
| TW (1) | TWI757299B (enExample) |
| WO (1) | WO2017210583A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3957619B1 (en) * | 2020-08-19 | 2025-11-12 | Rolls-Royce High Temperature Composites Inc | Method of making a ceramic matrix composite that exhibits chemical resistance |
| US20240240391A1 (en) * | 2023-01-12 | 2024-07-18 | Honeywell International Inc. | Continuous vacuum processing of fiber tows |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4343836A (en) * | 1979-07-26 | 1982-08-10 | United States Of America As Represented By The United States Department Of Energy | One-directional uniformly coated fibers, method of preparation, and uses therefor |
| US20070148346A1 (en) * | 2005-12-23 | 2007-06-28 | General Electric Company | Systems and methods for deposition of graded materials on continuously fed objects |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS605688B2 (ja) * | 1976-01-10 | 1985-02-13 | 東レ株式会社 | 交絡巻縮糸の製造方法 |
| US4601260A (en) * | 1985-04-01 | 1986-07-22 | Sovonics Solar Systems | Vertical semiconductor processor |
| DE3582682D1 (de) * | 1985-12-19 | 1991-05-29 | Hewlett Packard Co | Vorrichtung zur chemischen dampfphasenabscheidung einer beschichtung auf eine optische faser. |
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- 2017-06-02 JP JP2018563020A patent/JP7146645B2/ja active Active
- 2017-06-02 SG SG11201810649PA patent/SG11201810649PA/en unknown
- 2017-06-02 TW TW106118248A patent/TWI757299B/zh not_active IP Right Cessation
- 2017-06-02 US US16/306,171 patent/US11578004B2/en active Active
- 2017-06-02 WO PCT/US2017/035728 patent/WO2017210583A1/en not_active Ceased
- 2017-06-02 SG SG10202011721TA patent/SG10202011721TA/en unknown
- 2017-06-02 CN CN201780033767.6A patent/CN109195931B/zh not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| CN109195931A (zh) | 2019-01-11 |
| US20200290932A1 (en) | 2020-09-17 |
| JP2019522108A (ja) | 2019-08-08 |
| JP7146645B2 (ja) | 2022-10-04 |
| SG11201810649PA (en) | 2018-12-28 |
| CN109195931B (zh) | 2022-08-09 |
| TW201807240A (zh) | 2018-03-01 |
| EP3464218A4 (en) | 2020-08-05 |
| SG10202011721TA (en) | 2020-12-30 |
| EP3464218A1 (en) | 2019-04-10 |
| US11578004B2 (en) | 2023-02-14 |
| WO2017210583A1 (en) | 2017-12-07 |
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